Chapter 7: AC Transistor Amplifiers
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EXPERIMENT 4: RC, RL and RD Circuits
Laboratory 4: The RC Circuit EXPERIMENT 4: RC, RL and RD CIRCUITs Equipment List An assortment of resistor, one each of (330, 1k,1.5k, 10k,100k,1000k) Function Generator Oscilloscope 0.F Ceramic Capacitor 100H Inductor LED and 1N4001 Diode. Introduction We have studied D.C. circuits with resistors and batteries and discovered that Ohm’s Law governs the relationship between current through and voltage across a resistance. It is a linear response; i.e., 푉 = 퐼푅 (1) Such circuit elements are called passive elements. With A.C. circuits we find other passive elements called capacitors and inductors. These, too, obey Ohm’s Law and circuit loop problems can be solved using Kirchoff’ 3 Laws in much the same way as with DC. circuits. However, there is one major difference - in an AC. circuit, voltage across and current through a circuit element or branch are not necessarily in phase with one another. We saw an example of this at the end of Experiment 3. In an AC. series circuit the source voltage and current are time dependent such that 푖(푡) = 푖푠sin(휔푡) (2) 푣(푡) = 푣푠sin(휔푡 + 휙) where, in this case, voltage leads current by the phase angle , and Vs and Is are the peak source voltage and peak current, respectively. As you know or will learn from the text, the phase relationships between circuit element voltages and series current are these: resistor - voltage and current are in phase implying that 휙 = 0 휋 capacitor - voltage lags current by 90o implying that 휙 = − 2 inductor - voltage leads current by 90o implying that 휙 = 휋/2 Laboratory 4: The RC Circuit In this experiment we will study a circuit with a resistor and a capacitor in m. -
Unit-1 Mphycc-7 Ujt
UNIT-1 MPHYCC-7 UJT The Unijunction Transistor or UJT for short, is another solid state three terminal device that can be used in gate pulse, timing circuits and trigger generator applications to switch and control either thyristors and triac’s for AC power control type applications. Like diodes, unijunction transistors are constructed from separate P-type and N-type semiconductor materials forming a single (hence its name Uni-Junction) PN-junction within the main conducting N-type channel of the device. Although the Unijunction Transistor has the name of a transistor, its switching characteristics are very different from those of a conventional bipolar or field effect transistor as it can not be used to amplify a signal but instead is used as a ON-OFF switching transistor. UJT’s have unidirectional conductivity and negative impedance characteristics acting more like a variable voltage divider during breakdown. Like N-channel FET’s, the UJT consists of a single solid piece of N-type semiconductor material forming the main current carrying channel with its two outer connections marked as Base 2 ( B2 ) and Base 1 ( B1 ). The third connection, confusingly marked as the Emitter ( E ) is located along the channel. The emitter terminal is represented by an arrow pointing from the P-type emitter to the N-type base. The Emitter rectifying p-n junction of the unijunction transistor is formed by fusing the P-type material into the N-type silicon channel. However, P-channel UJT’s with an N- type Emitter terminal are also available but these are little used. -
Power Electronics
Diodes and Transistors Semiconductors • Semiconductor devices are made of alternating layers of positively doped material (P) and negatively doped material (N). • Diodes are PN or NP, BJTs are PNP or NPN, IGBTs are PNPN. Other devices are more complex Diodes • A diode is a device which allows flow in one direction but not the other. • When conducting, the diodes create a voltage drop, kind of acting like a resistor • There are three main types of power diodes – Power Diode – Fast recovery diode – Schottky Diodes Power Diodes • Max properties: 1500V, 400A, 1kHz • Forward voltage drop of 0.7 V when on Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased. Fast Recovery Diodes • Max properties: similar to regular power diodes but recover time as low as 50ns • The following is a graph of a diode’s recovery time. trr is shorter for fast recovery diodes Schottky Diodes • Max properties: 400V, 400A • Very fast recovery time • Lower voltage drop when conducting than regular diodes • Ideal for high current low voltage applications Current vs Voltage Characteristics • All diodes have two main weaknesses – Leakage current when the diode is off. This is power loss – Voltage drop when the diode is conducting. This is directly converted to heat, i.e. power loss • Other problems to watch for: – Notice the reverse current in the recovery time graph. This can be limited through certain circuits. Ways Around Maximum Properties • To overcome maximum voltage, we can use the diodes in series. Here is a voltage sharing circuit • To overcome maximum current, we can use the diodes in parallel. -
KVL Example Resistor Voltage Divider • Consider a Series of Resistors And
KVL Example Resistor Voltage Divider • Consider a series of resistors and a voltage source • Then using KVL V −V1 −V2 = 0 • Since by Ohm’s law V1 = I1R1 V2 = I1R2 • Then V − I1R1 − I1R2 = V − I1()R1 + R2 = 0 • Thus V 5 I1 = = = 1 mA R1 + R2 2000 + 3000 • i.e. get the resistors in series formula Rtotal = R1 + R2 = 5 KΩ KVL Example Resistor Voltage Divider Continued • What is the voltage across each resistor • Now we can relate V1 and V2 to the applied V • With the substitution V I 1 = R1 + R 2 • Thus V1 VR1 5(2000) V1 = I1R1 = = = 2 V R1 + R2 2000 + 3000 • Similarly for the V2 VR2 5(3000) V1 = I1R2 = = = 3V R1 + R2 2000 + 3000 General Resistor Voltage Divider • Consider a long series of resistors and a voltage source • Then using KVL or series resistance get N V V = I1∑ R j KorKI1 = N j=1 ∑ R j j=1 • The general voltage Vk across resistor Rk is VRk Vk = I1Rk = N ∑ R j j=1 • Note important assumption: current is the same in all Rj Usefulness of Resistor Voltage Divider • A voltage divider can generate several voltages from a fixed source • Common circuits (eg IC’s) have one supply voltage • Use voltage dividers to create other values at low cost/complexity • Eg. Need different supply voltages for many transistors • Eg. Common computer outputs 5V (called TTL) • But modern chips (CMOS) are lower voltage (eg. 2.5 or 1.8V) • Quick interface – use a voltage divider on computer output • Gives desired input to the chip Variable Voltage and Resistor Voltage Divider • If have one fixed and one variable resistor (rheostat) • Changing variable resistor controls out Voltage across rheostat • Simple power supplies use this • Warning: ideally no additional loads can be applied. -
Ohm's Law and Kirchhoff's Laws
CHAPTER 2 Basic Laws Here we explore two fundamental laws that govern electric circuits (Ohm's law and Kirchhoff's laws) and discuss some techniques commonly applied in circuit design and analysis. 2.1. Ohm's Law Ohm's law shows a relationship between voltage and current of a resis- tive element such as conducting wire or light bulb. 2.1.1. Ohm's Law: The voltage v across a resistor is directly propor- tional to the current i flowing through the resistor. v = iR; where R = resistance of the resistor, denoting its ability to resist the flow of electric current. The resistance is measured in ohms (Ω). • To apply Ohm's law, the direction of current i and the polarity of voltage v must conform with the passive sign convention. This im- plies that current flows from a higher potential to a lower potential 15 16 2. BASIC LAWS in order for v = iR. If current flows from a lower potential to a higher potential, v = −iR. l i + v R – Material with Cross-sectional resistivity r area A 2.1.2. The resistance R of a cylindrical conductor of cross-sectional area A, length L, and conductivity σ is given by L R = : σA Alternatively, L R = ρ A where ρ is known as the resistivity of the material in ohm-meters. Good conductors, such as copper and aluminum, have low resistivities, while insulators, such as mica and paper, have high resistivities. 2.1.3. Remarks: (a) R = v=i (b) Conductance : 1 i G = = R v 1 2 The unit of G is the mho (f) or siemens (S) 1Yes, this is NOT a typo! It was derived from spelling ohm backwards. -
Notes for Lab 1 (Bipolar (Junction) Transistor Lab)
ECE 327: Electronic Devices and Circuits Laboratory I Notes for Lab 1 (Bipolar (Junction) Transistor Lab) 1. Introduce bipolar junction transistors • “Transistor man” (from The Art of Electronics (2nd edition) by Horowitz and Hill) – Transistors are not “switches” – Base–emitter diode current sets collector–emitter resistance – Transistors are “dynamic resistors” (i.e., “transfer resistor”) – Act like closed switch in “saturation” mode – Act like open switch in “cutoff” mode – Act like current amplifier in “active” mode • Active-mode BJT model – Collector resistance is dynamically set so that collector current is β times base current – β is assumed to be very high (β ≈ 100–200 in this laboratory) – Under most conditions, base current is negligible, so collector and emitter current are equal – β ≈ hfe ≈ hFE – Good designs only depend on β being large – The active-mode model: ∗ Assumptions: · Must have vEC > 0.2 V (otherwise, in saturation) · Must have very low input impedance compared to βRE ∗ Consequences: · iB ≈ 0 · vE = vB ± 0.7 V · iC ≈ iE – Typically, use base and emitter voltages to find emitter current. Finish analysis by setting collector current equal to emitter current. • Symbols – Arrow represents base–emitter diode (i.e., emitter always has arrow) – npn transistor: Base–emitter diode is “not pointing in” – pnp transistor: Emitter–base diode “points in proudly” – See part pin-outs for easy wiring key • “Common” configurations: hold one terminal constant, vary a second, and use the third as output – common-collector ties collector -
ECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor DC biased at the appropriate point (Q point or operating point), linear relations can be derived between the small voltage signal and current signal. We will continue this analysis with MOSFETs, starting with the common-source amplifier. 1 Common-Source (CS) Amplifier The common-source (CS) amplifier for MOSFET is the analogue of the common- emitter amplifier for BJT. Its popularity arises from its high gain, and that by cascading a number of them, larger amplification of the signal can be achieved. 1.1 Chararacteristic Parameters of the CS Amplifier Figure 1(a) shows the small-signal model for the common-source amplifier. Here, RD is considered part of the amplifier and is the resistance that one measures between the drain and the ground. The small-signal model can be replaced by its hybrid-π model as shown in Figure 1(b). Then the current induced in the output port is i = −gmvgs as indicated by the current source. Thus vo = −gmvgsRD (1.1) By inspection, one sees that Rin = 1; vi = vsig; vgs = vi (1.2) Thus the open-circuit voltage gain is vo Avo = = −gmRD (1.3) vi Printed on March 14, 2018 at 10 : 48: W.C. Chew and S.K. Gupta. 1 One can replace a linear circuit driven by a source by its Th´evenin equivalence. -
Thyristors.Pdf
THYRISTORS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Thyristors Thyristors are a class of semiconductor devices characterized by 4-layers of alternating p and n material. Four-layer devices act as either open or closed switches; for this reason, they are most frequently used in control applications. Some thyristors and their symbols are (a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The 4-layer diode (or Shockley diode) is a type of thyristor that acts something like an ordinary diode but conducts in the forward direction only after a certain anode to cathode voltage called the forward-breakover voltage is reached. The basic construction of a 4-layer diode and its schematic symbol are shown The 4-layer diode has two leads, labeled the anode (A) and the Anode (A) A cathode (K). p 1 n The symbol reminds you that it acts 2 p like a diode. It does not conduct 3 when it is reverse-biased. n Cathode (K) K Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The concept of 4-layer devices is usually shown as an equivalent circuit of a pnp and an npn transistor. Ideally, these devices would not conduct, but when forward biased, if there is sufficient leakage current in the upper pnp device, it can act as base current to the lower npn device causing it to conduct and bringing both transistors into saturation. -
Phasor Analysis of Circuits
Phasor Analysis of Circuits Concepts Frequency-domain analysis of a circuit is useful in understanding how a single-frequency wave undergoes an amplitude change and phase shift upon passage through the circuit. The concept of impedance or reactance is central to frequency-domain analysis. For a resistor, the impedance is Z ω = R , a real quantity independent of frequency. For capacitors and R ( ) inductors, the impedances are Z ω = − i ωC and Z ω = iω L. In the complex plane C ( ) L ( ) these impedances are represented as the phasors shown below. Im ivL R Re -i/vC These phasors are useful because the voltage across each circuit element is related to the current through the equation V = I Z . For a series circuit where the same current flows through each element, the voltages across each element are proportional to the impedance across that element. Phasor Analysis of the RC Circuit R V V in Z in Vout R C V ZC out The behavior of this RC circuit can be analyzed by treating it as the voltage divider shown at right. The output voltage is then V Z −i ωC out = C = . V Z Z i C R in C + R − ω + The amplitude is then V −i 1 1 out = = = , V −i +ω RC 1+ iω ω 2 in c 1+ ω ω ( c ) 1 where we have defined the corner, or 3dB, frequency as 1 ω = . c RC The phasor picture is useful to determine the phase shift and also to verify low and high frequency behavior. The input voltage is across both the resistor and the capacitor, so it is equal to the vector sum of the resistor and capacitor voltages, while the output voltage is only the voltage across capacitor. -
Basic DC Motor Circuits
Basic DC Motor Circuits Living with the Lab Gerald Recktenwald Portland State University [email protected] DC Motor Learning Objectives • Explain the role of a snubber diode • Describe how PWM controls DC motor speed • Implement a transistor circuit and Arduino program for PWM control of the DC motor • Use a potentiometer as input to a program that controls fan speed LWTL: DC Motor 2 What is a snubber diode and why should I care? Simplest DC Motor Circuit Connect the motor to a DC power supply Switch open Switch closed +5V +5V I LWTL: DC Motor 4 Current continues after switch is opened Opening the switch does not immediately stop current in the motor windings. +5V – Inductive behavior of the I motor causes current to + continue to flow when the switch is opened suddenly. Charge builds up on what was the negative terminal of the motor. LWTL: DC Motor 5 Reverse current Charge build-up can cause damage +5V Reverse current surge – through the voltage supply I + Arc across the switch and discharge to ground LWTL: DC Motor 6 Motor Model Simple model of a DC motor: ❖ Windings have inductance and resistance ❖ Inductor stores electrical energy in the windings ❖ We need to provide a way to safely dissipate electrical energy when the switch is opened +5V +5V I LWTL: DC Motor 7 Flyback diode or snubber diode Adding a diode in parallel with the motor provides a path for dissipation of stored energy when the switch is opened +5V – The flyback diode allows charge to dissipate + without arcing across the switch, or without flowing back to ground through the +5V voltage supply. -
6 Insulated-Gate Field-Effect Transistors
Chapter 6 INSULATED-GATE FIELD-EFFECT TRANSISTORS Contents 6.1 Introduction ......................................301 6.2 Depletion-type IGFETs ...............................302 6.3 Enhancement-type IGFETs – PENDING .....................311 6.4 Active-mode operation – PENDING .......................311 6.5 The common-source amplifier – PENDING ...................312 6.6 The common-drain amplifier – PENDING ....................312 6.7 The common-gate amplifier – PENDING ....................312 6.8 Biasing techniques – PENDING ..........................312 6.9 Transistor ratings and packages – PENDING .................312 6.10 IGFET quirks – PENDING .............................313 6.11 MESFETs – PENDING ................................313 6.12 IGBTs ..........................................313 *** INCOMPLETE *** 6.1 Introduction As was stated in the last chapter, there is more than one type of field-effect transistor. The junction field-effect transistor, or JFET, uses voltage applied across a reverse-biased PN junc- tion to control the width of that junction’s depletion region, which then controls the conduc- tivity of a semiconductor channel through which the controlled current moves. Another type of field-effect device – the insulated gate field-effect transistor, or IGFET – exploits a similar principle of a depletion region controlling conductivity through a semiconductor channel, but it differs primarily from the JFET in that there is no direct connection between the gate lead 301 302 CHAPTER 6. INSULATED-GATE FIELD-EFFECT TRANSISTORS and the semiconductor material itself. Rather, the gate lead is insulated from the transistor body by a thin barrier, hence the term insulated gate. This insulating barrier acts like the di- electric layer of a capacitor, and allows gate-to-source voltage to influence the depletion region electrostatically rather than by direct connection. In addition to a choice of N-channel versus P-channel design, IGFETs come in two major types: enhancement and depletion. -
Differential Amplifiers
www.getmyuni.com Operational Amplifiers: The operational amplifier is a direct-coupled high gain amplifier usable from 0 to over 1MH Z to which feedback is added to control its overall response characteristic i.e. gain and bandwidth. The op-amp exhibits the gain down to zero frequency. Such direct coupled (dc) amplifiers do not use blocking (coupling and by pass) capacitors since these would reduce the amplification to zero at zero frequency. Large by pass capacitors may be used but it is not possible to fabricate large capacitors on a IC chip. The capacitors fabricated are usually less than 20 pf. Transistor, diodes and resistors are also fabricated on the same chip. Differential Amplifiers: Differential amplifier is a basic building block of an op-amp. The function of a differential amplifier is to amplify the difference between two input signals. How the differential amplifier is developed? Let us consider two emitter-biased circuits as shown in fig. 1. Fig. 1 The two transistors Q1 and Q2 have identical characteristics. The resistances of the circuits are equal, i.e. RE1 = R E2, RC1 = R C2 and the magnitude of +VCC is equal to the magnitude of �VEE. These voltages are measured with respect to ground. To make a differential amplifier, the two circuits are connected as shown in fig. 1. The two +VCC and �VEE supply terminals are made common because they are same. The two emitters are also connected and the parallel combination of RE1 and RE2 is replaced by a resistance RE. The two input signals v1 & v2 are applied at the base of Q1 and at the base of Q2.