How to Select a Capacitor for Power Supplies
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Syfer Capacitor Basics
Syfer Technology Limited, Old Stoke Road, Arminghall, Norwich, Norfolk, NR14 8SQ, United Kingdom Tel: +44 (0) 1603 723300 Tel. (Sales): 01603 723310 Fax: +44 (0) 1603 723301 Email: [email protected] Web: www.knowlescapacitors.com Syfer Capacitor Basics What is a Capacitor ..................................................................................2 Electrode .............................................................................................2 Dielectric .............................................................................................2 Construction ........................................................................................2 MLCC Uses ..............................................................................................3 Limitations and Factors for Consideration ....................................................3 Dielectric Types .......................................................................................4 X7R.....................................................................................................4 X5R.....................................................................................................5 X8R.....................................................................................................5 2C1 (BZ) and 2X1 (BX) .........................................................................5 C0G ....................................................................................................5 High Q .................................................................................................5 -
A High Efficiency 0.13Μm CMOS Full Wave Active Rectifier With
Advances in Science, Technology and Engineering Systems Journal ASTES Journal Vol. 2, No. 3, 1019-1025 (2017) ISSN: 2415-6698 www.astesj.com Special issue on Recent Advances in Engineering Systems A High Efficiency 0.13µm CMOS Full Wave Active Rectifier with Comparators for Implanted Medical Devices Joao˜ Ricardo de Castilho Louzada, Leonardo Breseghello Zoccal, Robson Luiz Moreno, Tales Cleber Pimenta Federal University of Itajuba,´ IEST, Itajuba´ - MG, Brazil ARTICLEINFO ABSTRACT Article history: This paper presents a full wave active rectifier for biomedical implanted Received: 30 April, 2017 devices using a new comparator in order to reduce the rectifier Accepted: 29 June, 2017 transistors reverse current. The rectifier was designed in 0.13µm Online: 11 July, 2017 CMOS process and it can deliver 1.2Vdc for a minimum signal of Keywords: 1.3Vac. It achieves a power conversion e ciency of 92% at the Active Rectifier ffi 13.56MHz Scientific and Medical (ISM) band. CMOS Comparator Medical Devices 1 Introduction but it is unusable for circuits running on power sup- plies of 1V or less. Alternatively to the conventional This paper is an extension of work originally pre- diodes, Schottky diodes can be used, but the manu- sented in The 15th International Symposium on In- facturing process of low forward drop voltage can be tegrated Circuits, Sigapure, 2016 [1]. It presents some more expensive than the traditional processes [4] be- details not described in the original paper. This paper cause they might not be present in some regular pro- also brings new results obtained after a new calibra- cesses and require extra fabrication steps [5]. -
Ltc3225/Ltc3225-1
LTC3225/LTC3225-1 150mA Supercapacitor Charger FEATURES DESCRIPTION n Low Noise Constant Frequency Charging of Two The LTC®3225/LTC3225-1 are programmable supercapaci- Series Supercapacitors tor chargers designed to charge two supercapacitors in n Automatic Cell Balancing Prevents Capacitor series to a selectable fi xed output voltage (4.8V/5.3V for Overvoltage During Charging the LTC3225 and 4V/4.5V for the LTC3225-1) from input n Programmable Charge Current (Up to 150mA) supplies as low as 2.8V to 5.5V. Automatic cell balancing n Selectable 2.4V or 2.65V Regulation per Cell prevents overvoltage damage to either supercapacitor. No (LTC3225) balancing resistors are required. n Selectable 2V or 2.25V Regulation per Cell Low input noise, low quiescent current and low external (LTC3225-1) parts count (one fl ying capacitor, one bypass capacitor at n Automatic Recharge V and one programming resistor) make the LTC3225/ n I = 20μA in Standby Mode IN VIN LTC3225-1 ideally suited for small battery-powered n I < 1μA When Input Supply is Removed COUT applications. n No Inductors n Tiny Application Circuit (2mm × 3mm DFN Package, Charge current level is programmed with an external All Components <1mm High) resistor. When the input supply is removed, the LTC3225/ LTC3225-1 automatically enter a low current state, drawing APPLICATIONS less than 1μA from the supercapacitors. The LTC3225/LTC3225-1 are available in a 10-lead 2mm n Current Limited Applications with High Peak Power × 3mm DFN package. Loads (LED Flash, PCMCIA Tx Bursts, HDD Bursts, L, LT, LTC and LTM are registered trademarks and ThinSOT is a trademark of Linear GPRS/GSM Transmitter) Technology Corporation. -
Synthesis of Nano-Ceramics for Supercapacitors
University of Wollongong Research Online University of Wollongong Thesis Collection 1954-2016 University of Wollongong Thesis Collections 2014 Synthesis of nano-ceramics for supercapacitors Azrin Akhter Chowdhury University of Wollongong Follow this and additional works at: https://ro.uow.edu.au/theses University of Wollongong Copyright Warning You may print or download ONE copy of this document for the purpose of your own research or study. The University does not authorise you to copy, communicate or otherwise make available electronically to any other person any copyright material contained on this site. You are reminded of the following: This work is copyright. Apart from any use permitted under the Copyright Act 1968, no part of this work may be reproduced by any process, nor may any other exclusive right be exercised, without the permission of the author. Copyright owners are entitled to take legal action against persons who infringe their copyright. A reproduction of material that is protected by copyright may be a copyright infringement. A court may impose penalties and award damages in relation to offences and infringements relating to copyright material. Higher penalties may apply, and higher damages may be awarded, for offences and infringements involving the conversion of material into digital or electronic form. Unless otherwise indicated, the views expressed in this thesis are those of the author and do not necessarily represent the views of the University of Wollongong. Recommended Citation Chowdhury, Azrin Akhter, Synthesis of nano-ceramics for supercapacitors, Doctor of Philosophy thesis, Engineering Materials Institute, University of Wollongong, 2014. https://ro.uow.edu.au/theses/4314 Research Online is the open access institutional repository for the University of Wollongong. -
What Is an SMPS and How Does It Generate Harmonics?
MIRUS FREQUENTLY ASKED QUESTIONS FAQ’s___ International Inc. 6805 Invader Cres., Unit #12, Mississauga, Ontario, Canada L5T 2K6 Harmonic Mitigating Transformers <Back to Questions> 4. What is an SMPS and how does it generate harmonics? The Switch-mode Power Supply (SMPS) is found in most power electronics today. Its reduced size and weight, better energy efficiency and lower cost make it far superior to the power supply technology it replaced. Electronic devices need power supplies to convert the 120VAC receptacle voltage to the low voltage DC levels Rectifier Lls that they require. Older generation power supplies used Bridge large and heavy 60 Hz step-down transformers to i convert the AC input voltage to lower values before ac Smoothing Switch-mode rectification. The SMPS avoids the heavy 60 Hz step- vac Capacitor dc-to-dc Cf converter down transformer by directly rectifying the 120VAC Load using an input diode bridge (Figure 4-1). The rectified voltage is then converted to lower voltages by much smaller and lighter switch-mode dc-to-dc converters using tiny transformers that operate at very high Figure 4-1: Typical circuit diagram of Switch-mode Power frequency. Consequently the SMPS is very small and Supply light. The SMPS is not without its downside, however. The operation of the diode bridge and accompanying smoothing capacitor is very non-linear in nature. That is, it draws current in non-sinusoidal pulses at the peak of the voltage Voltage waveform (see Figure 4-2). This non-sinusoidal current waveform is very rich in harmonic currents. Because the SMPS has become the standard computer power supply, they are found in large quantities in commercial buildings. -
Suggestion of the Supercapacitor(EDLC) Application to the Electrical Characteristic Tester
Supercapacitor (EDLC) Application Note No. C2M1CXS-163A(E) Suggestion of the Supercapacitor(EDLC) Application to the Electrical Characteristic Tester 1. Summary Supercapacitor, also known as EDLC or supercap, has higher-capacity than ceramic capacitor or electrolytic capacitor. And supercapacitor is an energy storage device having longer life than a battery. In addition, Murata’s supercapacitor can handle the output power up to 50W by realizing super low ESR approximately 40mΩ (DMF series example) At the measurement environment that a high peak electric current runs through the load instantly, our supercapacitor can assist such peak current. By this effect, it is possible to downsize Fig.3 : Measurement Block Diagram with Supercapacitor and reduce power capacity of DC power supply. Besides it contributes to reduce measuring equipment cost and save the Fig.4 and Fig.5 shows each part waveform. electric power of the facilities. Top(Yellow):Load current, Middle(Green):Power line voltage, Bottom(Purple):DC power supply current. 2. Benefits Fig.4: DC power supply only. ①Downsize the DC power supply Fig.5: Supercap is added to DC power supply. Even if the power supply capacity cannot support a peak current, The effect of supercap can be confirmed because the fluctuation it does not matter because supercap can assist it. ②Supercapacitor as a power source of the input voltage is smaller and the peak current of power Because supercap can be charged quickly, it is possible to use supply decreases. supercap as power source at the time of measurement. ③Reduce the cost and Save power of measurement equipment. ④Can be mounted on limited area because of its thinner and smaller shape. -
EE 462: Laboratory # 4 DC Power Supply Circuits Using Diodes (Lab 3 Report Due at Beginning of the Period) (Pre-Lab4 and Lab-4 D
EE 462: Laboratory # 4 DC Power Supply Circuits Using Diodes by Drs. A.V. Radun and K.D. Donohue (2/14/07) Department of Electrical and Computer Engineering University of Kentucky Lexington, KY 40506 Updated by Stephen Maloney (2/12/08) (Lab 3 report due at beginning of the period) (Pre-lab4 and Lab-4 Datasheet due at the end of the period) I. Instructional Objectives Design and construct circuits that transform sinusoidal (AC) voltages into constant (DC) voltages. Design and construct a voltage regulator based on the characteristics of the Zener diode. Evaluate the performance of simple rectifier and regulator circuits. See Horenstein 4.3 and 4.4 II. Background Electric power transmits best over long distances at high voltages. Since P = I V, a larger voltage implies a smaller current for the same transmitted power. And smaller currents allow for the use of smaller wires with less loss. The high voltages used for power transmission must be reduced to be compatible with the needs of most consumer and industrial equipment. This is done with transformers that only operate with AC (DC does not pass through a transformer). However, most electronic devices powered by a home outlet require DC (constant) voltages. Therefore, the device must have a power supply that converts AC voltages into a DC (constant) voltage. The terminology "DC" is somewhat ambiguous. DC can mean the voltage or current always has the same polarity but changes with time (pulsating DC), or it can mean a constant value. In this lab assignment DC will refer to a constant voltage or current. -
Custom Power Supplies, Transformers, Chokes & Reactors
YOUR POWER SOURCE Custom Power Supplies, Transformers, Chokes & Reactors NeeltranThe Story Transformers and Power Supplies • Industry Leader since 1973 Neeltran has become the most reliable supplier of Transformers and Power Supply Systems in the industry. Our engineers, along with our manufacturing team, have the knowledge and ability to meet the special needs of our customers. All power supplies are custom designed to your specifications by our engineering staff and completely fabricated in-house at our manufacturing facility. Our facilities and experience include: • Research & Development Since 1973 Neeltran has been a leading • Test Laboratory manufacturer of transformers and • Design Engineering power supplies. • Printed Circuit Board Manufacturing Our general product range is: • Steel Cutting Machinery • Dry Type and Water Cooled Transformers: • Baking Ovens 5–10,000 KVA (up to 25 KV input) • Vacuum Pressure Impregnation Tanks (Outputs up to 300 KV and 50 KHZ) • Coil Winding Equipment • Oil filled Transformers (Rectifier type only): 100 KVA to 50 MVA (up to 69 KV input) • Painting and Steel Fabrication to manufacture our own enclosures • Oil filled high frequency Transformers: • Assembly Areas up to 50 KHZ, 2000 KVA, up to 50 KV output Industry standards are maintained with our • Cast Coil Transformers: up to 20 MVA testing equipment assuring that all shipped (up to 35 KV input) products meet customer’s requirements and • Chokes and Reactors air or iron: specifications. Impulse testing as well as customer up to 25 KV, 20,000 amps specific testing is available upon request. • Power Supplies: 100 A to 500,000 amp (AC or DC) 1500 VDC. Special outputs up to 300,000 volts AC or DC and high frequencies are available. -
Design Tips for Linear and Switched‐Mode Power Supplies
Analog Design Journal Power Design tips for linear and switched-mode power supplies By Billy Long Systems Engineer Introduction the rate of change of flux in that conductor. Energy transmitted through the electric grid is transmit- dΦ VN= (1) ted at very high voltages to reduce the amount of copper dt lost as heat in the wires; however, most electrical and where N is the number of turns of the conductor subject electronic applications use much lower voltages. to the change in flux, Φ. One of the main reasons why the power grid uses AC The magnetic flux in a single-conductor loop = B × A, currents and voltages is that it is relatively easy to use where B is the flux density/unit area and A is the area of transformers to convert AC power from one voltage to the loop. The relationship of induced voltage to induced another. This technology was readily available during the flux density is shown by Equation 2. initial development and deployment of power grids in the (2) late 19th and early 20th centuries. ∫ V× dt = N ×Φ = NB× × A To convert the typical grid voltage of 90 VAC to 240 VAC Because the inductance (and hence impedance) of the (depending on global location) down to a lower voltage, transmission lines used in the AC grid increases with early electronic applications used a linear power supply, frequency, the operating frequency of grids around the shown in Figure 1. world was standardized in the 50- to 60-Hz range. This The line voltage is applied to a transformer, which frequency, in conjunction with the rms grid voltages converts the input voltage down to a lower voltage. -
Surface Mount Ceramic Capacitor Products
Surface Mount Ceramic Capacitor Products 082621-1 IMPORTANT INFORMATION/DISCLAIMER All product specifications, statements, information and data (collectively, the “Information”) in this datasheet or made available on the website are subject to change. The customer is responsible for checking and verifying the extent to which the Information contained in this publication is applicable to an order at the time the order is placed. All Information given herein is believed to be accurate and reliable, but it is presented without guarantee, warranty, or responsibility of any kind, expressed or implied. Statements of suitability for certain applications are based on AVX’s knowledge of typical operating conditions for such applications, but are not intended to constitute and AVX specifically disclaims any warranty concerning suitability for a specific customer application or use. ANY USE OF PRODUCT OUTSIDE OF SPECIFICATIONS OR ANY STORAGE OR INSTALLATION INCONSISTENT WITH PRODUCT GUIDANCE VOIDS ANY WARRANTY. The Information is intended for use only by customers who have the requisite experience and capability to determine the correct products for their application. Any technical advice inferred from this Information or otherwise provided by AVX with reference to the use of AVX’s products is given without regard, and AVX assumes no obligation or liability for the advice given or results obtained. Although AVX designs and manufactures its products to the most stringent quality and safety standards, given the current state of the art, isolated component failures may still occur. Accordingly, customer applications which require a high degree of reliability or safety should employ suitable designs or other safeguards (such as installation of protective circuitry or redundancies) in order to ensure that the failure of an electrical component does not result in a risk of personal injury or property damage. -
Hexfet® Transistor Irhn9230
Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED IRHN9230 ® HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.8Ω, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRHN9230 -200V 0.8Ω -6.5A high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up Features: to 1 x 105 Rads (Si) total dose. No compensation in gate 5 drive circuitry is required. In addition these devices are also n Radiation Hardened up to 1 x 10 Rads (Si) capable of surviving transient ionization pulses as high as n Single Event Burnout (SEB) Hardened 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of n Single Event Gate Rupture (SEGR) Hardened International Rectifier P-Channel RAD HARD HEXFETs has n Gamma Dot (Flash X-Ray) Hardened demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International n Neutron Tolerant Rectifier’s patented HEXFET technology, the user can expect n Identical Pre- and Post-Electrical Test Conditions the highest quality and reliability in the industry. n Repetitive Avalanche Rating P-Channel RAD HARD HEXFET transistors also feature all Dynamic dv/dt Rating of the well-established advantages of MOSFETs, such as n voltage control,very fast switching, ease of paralleling and n Simple Drive Requirements temperature stability of the electrical parameters. -
MOSFET Operation Lecture Outline
97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline • Last lecture examined the MOSFET structure and required processing steps • Now move on to basic MOSFET operation, some of which may be familiar • First consider drift, the movement of carriers due to an electric field – this is the basic conduction mechanism in the MOSFET • Then review basic regions of operation and charge mechanisms in MOSFET operation 97.398*, Physical Electronics: David J. Walkey Page 2 MOSFET Operation (21) Drift • The movement of charged particles under the influence of an electric field is termed drift • The current density due to conduction by drift can be written in terms of the electron and hole velocities vn and vp (cm/sec) as =+ J qnvnp qpv • This relationship is general in that it merely accounts for particles passing a certain point with a given velocity 97.398*, Physical Electronics: David J. Walkey Page 3 MOSFET Operation (21) Mobility and Velocity Saturation • At low values of electric field E, the carrier velocity is proportional to E -the proportionality constant is the mobility µ • At low fields, the current density can therefore be written Jqn= µ qpµ !nE+!p E v n v p • At high E, scattering limits the velocity to a maximum value and the relationship above no longer holds - this is termed velocity saturation 97.398*, Physical Electronics: David J. Walkey Page 4 MOSFET Operation (21) Factors Influencing Mobility • The value of mobility (velocity per unit electric field) is influenced by several factors – The mechanisms of conduction through the valence and conduction bands are different, and so the mobilities associated with electrons and holes are different.