By Erika Azabache Villar a Thesis Submitted in Partial Fulfillment of The
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Performance and Energy Efficient Network-On-Chip Architectures
Linköping Studies in Science and Technology Dissertation No. 1130 Performance and Energy Efficient Network-on-Chip Architectures Sriram R. Vangal Electronic Devices Department of Electrical Engineering Linköping University, SE-581 83 Linköping, Sweden Linköping 2007 ISBN 978-91-85895-91-5 ISSN 0345-7524 ii Performance and Energy Efficient Network-on-Chip Architectures Sriram R. Vangal ISBN 978-91-85895-91-5 Copyright Sriram. R. Vangal, 2007 Linköping Studies in Science and Technology Dissertation No. 1130 ISSN 0345-7524 Electronic Devices Department of Electrical Engineering Linköping University, SE-581 83 Linköping, Sweden Linköping 2007 Author email: [email protected] Cover Image A chip microphotograph of the industry’s first programmable 80-tile teraFLOPS processor, which is implemented in a 65-nm eight-metal CMOS technology. Printed by LiU-Tryck, Linköping University Linköping, Sweden, 2007 Abstract The scaling of MOS transistors into the nanometer regime opens the possibility for creating large Network-on-Chip (NoC) architectures containing hundreds of integrated processing elements with on-chip communication. NoC architectures, with structured on-chip networks are emerging as a scalable and modular solution to global communications within large systems-on-chip. NoCs mitigate the emerging wire-delay problem and addresses the need for substantial interconnect bandwidth by replacing today’s shared buses with packet-switched router networks. With on-chip communication consuming a significant portion of the chip power and area budgets, there is a compelling need for compact, low power routers. While applications dictate the choice of the compute core, the advent of multimedia applications, such as three-dimensional (3D) graphics and signal processing, places stronger demands for self-contained, low-latency floating-point processors with increased throughput. -
Lecture 5: Scaled MOSFETS for Ics
Lecture 5: Scaled MOSFETS for ICs MSE 6001, Semiconductor Materials Lectures Fall 2006 5 MOSFETS and scaling Silicon is a mediocre semiconductor, and several other semiconductors have better electrical and optical properties. However, the very high quality of the electrical properties of the silicon-silicon dioxide interface allows very good metal-oxide-semiconductor field-effect transistors (MOSFETs) to be fabricated. These devices have several properties, such as operation frequency and power con- sumption, that improve as their size is scaled down to smaller dimensions, which also allows more transistors to be packed onto a chip. The smaller sizes are achieved using higher-resolution pho- tolithography, which is improved by steadily improving the fabrication technologies. The trends of steadily improving performance and greater integration density with time are generically refered to A 70 Mbit SRAM test vehicle with >as0.5 “Moore’s billion trans Law”.istors Of course, scaling has to end eventually, somewhere before the scale of atoms and incorporating all of the features described in this paper has been fabricated on this technologyis. reached.The aggressive de- sign rules allow for a small 0.57Pm2 6-T SRAM cell that is also compatible with high performance logic processing. A top view of the cell after poly patterni5.1ng is show Basicn in Figur MOSFETe 12. In addition to small size, this cell has a robust static noise margin down to 0.7V VDD to alloMOSFETsw low voltage turnopera- on and off via the non-linear gate capacitor between the gate electrode and the tion (Fig. 13). Figure 14 is a Shmosubstrate.o plot for the The 70 M MOSFETb of Fig. -
An Area Efficient Sub-Threshold Voltage Level Shifter Using a Modified Wilson Current Mirror for Low Power Applications
An Area Efficient Sub-threshold Voltage Level Shifter using a Modified Wilson Current Mirror for Low Power Applications Biswarup Mukherjee & Aniruddha Ghosal Published online: 22 May 2019. Submit your article to this journal Article views: 12 View Crossmark data An Area Efficient Sub-threshold Voltage Level Shifter using a Modified Wilson Current Mirror for Low Power Applications Biswarup Mukherjee1 and Aniruddha Ghosal2 1Neotia Institute of Technology, Management and Science, Jhinga, Diamond Harbour Road, 24Pgs. (S), West Bengal, India; 2Institute of Radio Physics and Electronics, University of Calcutta, West Bengal, India ABSTRACT KEYWORDS In the present communication, a new technique has been introduced for implementing low-power Current mirror; CAD area efficient sub-threshold voltage level shifter (LS) circuit. The proposed LS circuit consists of only simulation; Level shifter (LS); nine transistors and can operate up to 100 MHz of input frequency successfully. The proposed LS Low power; Sub-threshold is made of single threshold voltage transistors which show least complexity in fabrication and bet- operation; Typical transistor (TT) ter performance in terms of delay analysis and power consumption compared to other available designs. CAD tool-based simulation at TSMC 180 nm technology and comparison between the pro- posed design and other available designs show that the proposed design performs better than other state-of-the-art designs for a similar range of voltage conversion with the most area efficiency. 1. INTRODUCTION are used to reduce the circuit activity or the capacitance value in order to reduce the switching power consump- With the increasing demand of portable devices in elec- tion. -
Overview of CMOS Sensors for Future Tracking Detectors
instruments Review Overview of CMOS Sensors for Future Tracking Detectors Ricardo Marco-Hernández Instituto de Física Corpuscular (CSIC-UV), 46980 Valencia, Spain; rmarco@ific.uv.es Received: 23 October 2020; Accepted: 27 November 2020; Published: 30 November 2020 Abstract: Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized. Keywords: DMAPS; CMOS; radiation sensors; electronics 1. Introduction Current large pixel detectors in High Energy Physics, such as the ones which will be part of the A Toroidal LHC (Large Hadron Collider) ApparatuS (ATLAS) Tracker Detector [1] or the Compact Muon Solenoid (CMS) Tracker Detector [2] upgrades for the High-Luminosity Large Hadron Collider (HL-LHC), mostly follow a hybrid approach. In a hybrid pixel detector the sensor and the readout electronics are independent devices connected by means of bump-bonding, as can be seen in Figure1. -
A Area VLSI Design (SCL)
A Area VLSI Design (SCL) A1 Sub Area ASIC Design (SCL) A1.1 Design of Instrumentation Amplifier A High-Precision Instrumentation Amplifier with large CMRR is required for the Sensor Signal conditioning applications. Instrumentation amplifier is a versatile device used for amplification of small differential mode signals while rejecting large common mode signal at the same time. In a typical signal conditioning chain, the output of the sensor goes to the instrumentation amplifier. The instrumentation amplifier amplifies the small output signal of the sensor and gives it to the ADC for digitization. Target Specification: • Supply Voltage: 3.3V • Temperature Range: -40 degC to 125 degC • Programmable Gain: 1 to 1000 • Low noise < 0.3µV p-p at 0.1 Hz to 10 Hz • Low non linearity < 20ppm (Gain = 1) • High CMRR (Common Mode Rejection Ratio) > 90dB (Gain=1) • Low offset voltage < 100µV • 3 dB Bandwidth: 1MHz (at Gain = 1) The design of the proposed Instrumentation Amplifier is to be carried out in SCL 180 nm process. A1.2 Design of a Current Feedback Amplifier (CFA) Opamps come in two types: the voltage-feedback amplifier (VFA), for which the input error is a voltage; and the current-feedback amplifier (CFA), for which the input error is a current. The CFA noninverting amplifier is relatively free from a gain-bandwidth trade-off. Additional advantage of CFAs compared to VFAs is the absence of slew-rate limiting. CFA is primarily used where both high speed and low distortion signal processing is required. CFAs are mainly used in broadcast video systems, radar systems , IF and RF stages and other high speed circuits. -
Multiprocessing Contents
Multiprocessing Contents 1 Multiprocessing 1 1.1 Pre-history .............................................. 1 1.2 Key topics ............................................... 1 1.2.1 Processor symmetry ...................................... 1 1.2.2 Instruction and data streams ................................. 1 1.2.3 Processor coupling ...................................... 2 1.2.4 Multiprocessor Communication Architecture ......................... 2 1.3 Flynn’s taxonomy ........................................... 2 1.3.1 SISD multiprocessing ..................................... 2 1.3.2 SIMD multiprocessing .................................... 2 1.3.3 MISD multiprocessing .................................... 3 1.3.4 MIMD multiprocessing .................................... 3 1.4 See also ................................................ 3 1.5 References ............................................... 3 2 Computer multitasking 5 2.1 Multiprogramming .......................................... 5 2.2 Cooperative multitasking ....................................... 6 2.3 Preemptive multitasking ....................................... 6 2.4 Real time ............................................... 7 2.5 Multithreading ............................................ 7 2.6 Memory protection .......................................... 7 2.7 Memory swapping .......................................... 7 2.8 Programming ............................................. 7 2.9 See also ................................................ 8 2.10 References ............................................. -
EP Activity Report 2015
EUROPRACTICE IC SERVICE THE RIGHT COCKTAIL OF ASIC SERVICES EUROPRACTICE IC SERVICE OFFERS YOU A PROVEN ROUTE TO ASICS THAT FEATURES: · .QYEQUV#5+%RTQVQV[RKPI · (NGZKDNGCEEGUUVQUKNKEQPECRCEKV[HQTUOCNNCPFOGFKWOXQNWOGRTQFWEVKQPSWCPVKVKGU · 2CTVPGTUJKRUYKVJNGCFKPIYQTNFENCUUHQWPFTKGUCUUGODN[CPFVGUVJQWUGU · 9KFGEJQKEGQH+%VGEJPQNQIKGU · &KUVTKDWVKQPCPFHWNNUWRRQTVQHJKIJSWCNKV[EGNNNKDTCTKGUCPFFGUKIPMKVUHQTVJGOQUVRQRWNCT%#&VQQNU · 46.VQ.C[QWVUGTXKEGHQTFGGRUWDOKETQPVGEJPQNQIKGU · (TQPVGPF#5+%FGUKIPVJTQWIJ#NNKCPEG2CTVPGTU +PFWUVT[KUTCRKFN[FKUEQXGTKPIVJGDGPG«VUQHWUKPIVJG'74124#%6+%'+%UGTXKEGVQJGNRDTKPIPGYRTQFWEVFGUKIPUVQOCTMGV SWKEMN[CPFEQUVGHHGEVKXGN[6JG'74124#%6+%'#5+%TQWVGUWRRQTVUGURGEKCNN[VJQUGEQORCPKGUYJQFQP°VPGGFCNYC[UVJG HWNNTCPIGQHUGTXKEGUQTJKIJRTQFWEVKQPXQNWOGU6JQUGEQORCPKGUYKNNICKPHTQOVJG¬GZKDNGCEEGUUVQUKNKEQPRTQVQV[RGCPF RTQFWEVKQPECRCEKV[CVNGCFKPIHQWPFTKGUFGUKIPUGTXKEGUJKIJSWCNKV[UWRRQTVCPFOCPWHCEVWTKPIGZRGTVKUGVJCVKPENWFGU+% OCPWHCEVWTKPIRCEMCIKPICPFVGUV6JKU[QWECPIGVCNNHTQO'74124#%6+%'+%UGTXKEGCUGTXKEGVJCVKUCNTGCF[GUVCDNKUJGF HQT[GCTUKPVJGOCTMGV THE EUROPRACTICE IC SERVICES ARE OFFERED BY THE FOLLOWING CENTERS: · KOGE.GWXGP $GNIKWO · (TCWPJQHGT+PUVKVWVHWGT+PVGITKGTVG5EJCNVWPIGP (TCWPJQHGT++5 'TNCPIGP )GTOCP[ This project has received funding from the European Union’s Seventh Programme for research, technological development and demonstration under grant agreement N° 610018. This funding is exclusively used to support European universities and research laboratories. © imec FOREWORD Dear EUROPRACTICE customers, We are at the start of the -
Stratix III Programmable Power
White Paper Stratix III Programmable Power Introduction Traditionally, digital logic has not consumed significant static power, but this has changed with very small process nodes. Leakage current in digital logic is now the primary challenge for FPGAs as process geometries decrease. While the move to the 65-nm process delivers the expected Moore's law benefits of increased density and performance, the performance increases can result in significant increases in power consumption, introducing the risk of consuming unacceptable amounts of power. If no power-reduction strategies are employed, power consumption becomes a critical issue because static power can increase dramatically with the 65-nm process. Static power consumption rises largely because of increases in various sources of leakage current. Figure 1 shows how these sources of leakage current (shown in blue) increase as the technology makes smaller gate lengths possible (shown in green). In addition, without any specific power optimization effort, dynamic power consumption can increase due to the increased logic capacity and higher switching frequencies that are attainable. Figure 1. Static Power Dissipation Increases Significantly at Smaller Process Geometries 300 100 250 Subthreshold 1 Leakage 200 150 10-2 Power Dissipation 100 Physical Gate Length [nm] Technology -4 Node 10 50 Gate-Oxide Leakage 0 10-6 Data from International Technology 1990 1995 2000 2005 2010 2015 2020 Roadmap for Semiconductors ITRS Roadmap Power consumption is composed of static and dynamic power. Static power is the power consumed by the FPGA when it is programmed with a Programmer Object File (.pof) but no clocks are operating. Both digital and analog logic consume static power. -
A Survey of Analog-To-Digital Converters for Operation Under Radiation Environments
electronics Review A Survey of Analog-to-Digital Converters for Operation under Radiation Environments Ernesto Pun-García 1,*,† and Marisa López-Vallejo 2 1 R&D Department, Arquimea Ingeniería SLU, 28918 Leganés, Spain 2 IPTC, ETSI Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain; [email protected] * Correspondence: [email protected]; Tel.: +34-610-571-208 † Current address: Calle Margarita Salas 10, 28918 Leganés, Madrid, Spain. Academic Editors: Marko Laketic, Paisley Shi and Anna Li Received: 7 September 2020; Accepted: 3 October 2020; Published: 15 October 2020 Abstract: In this work, we analyze in depth multiple characteristic data of a representative population of radenv-ADCs (analog-to-digital converters able to operate under radiation). Selected ADCs behave without latch-up below 50 MeV·cm2/mg and are able to bear doses of ionizing radiation above 50 krad(Si). An exhaustive search of ADCs with radiation characterization data has been carried out throughout the literature. The obtained collection is analyzed and compared against the state of the art of scientific ADCs, which reached years ago the electrical performance that radenv-ADCs provide nowadays. In fact, for a given Nyquist sampling rate, radenv-ADCs require significantly more power to achieve lower effective resolution. The extracted performance patterns and conclusions from our study aim to serve as reference for new developments towards more efficient implementations. As tools for this purpose, we have conceived FOMTID and FOMSET, two new figures of merit to compare radenv-ADCs that consider electrical and radiation performance. Keywords: ADC performance patterns; ADC state of the art; ADC survey; analog-to-digital converters; applications under radiation environments; figure of merit under radiation; radenv-ADC design guidelines; radiation effects; radiation hardening; radiation test methods 1. -
Design and Analysis of Integrated CMOS High-Voltage Drivers in Low-Voltage Technologies
Design and Analysis of Integrated CMOS High-Voltage Drivers in Low-Voltage Technologies Von der Fakultat¨ fur¨ MINT – Mathematik, Informatik, Physik, Elektro- und Informationstechnik der Brandenburgischen Technischen Universitat¨ Cottbus-Senftenberg zur Erlangung des akademischen Grades eines Doktors der Ingenieurwissenschaften (Dr.-Ing.) genehmigte Dissertation vorgelegt von M.Sc. Dipl.-Ing. Sara Toktam Pashmineh Azar geboren am 20.11.1972 in Torbat Heydarieh Gutachter: Prof. Dr.-Ing. Matthias Rudolph (Vorsitzender der Prufungskommission)¨ Gutachter: Prof. Dr.-Ing. Dirk Killat Gutachter: Prof. Dr.-Ing. Klaus Hofmann (Technische Universitat¨ Darmstadt) Tag der mundlichen¨ Prufung:¨ 10.07.2017 Selbstst¨andigkeitserkl¨arung Die Verfasserin erkl¨art, dass sie die vorliegende Arbeit selbst¨andig, ohne fremde Hilfe und ohne Benutzung anderer als die angegebenen Hilfsmittel angefertigt hat. Die aus frem- den Quellen (einschließlich elektronischer Quellen) direkt oder indirektubernommenen ¨ Gedanken sind ausnahmslos als solche kenntlich gemacht. Die Arbeit ist in gleicher oder ¨ahnlicher Form oder auszugsweise im Rahmen einer anderen Pr¨ufung noch nicht vorgelegt worden. Cottbus, Abstract With scaling technology, the nominal I/O voltage of standard transistors has been re- duced from 5.0 V in 0.25-μm processes to 2.5 V in 65-nm. However, the supply voltages of some applications cannot be reduced at the same rate as that of shrinking technolo- gies. Since high-voltage (HV-) compatible transistors are not available for some recent technologies and need time to be designed after developing a new process technology, de- signing HV-circuits based on stacked transistors has better benefits because such circuits offer technology independence and full integration with digital circuits to provide system- on-chip solutions. -
WP Microelectronics and Interconnections
Advanced European Infrastructures for Detectors at Accelerators FirSecondst Ann Annualual MeMeetingeting: WPWP44 St Statusatus R Reporteport ChrisChristophetophe de LA TA ILdeLE (laCN TailleRS/IN2P(CNRS/IN2P3)3) Valerio RE (INFN ) Valerio Re (INFN/Univ. Bergamo) LPNHE, Paris, April 7, 2017 DESY, Hamburg, June 17, 2016 This project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement no. 654168. WP4: microelectronics and interconnections • WP Coordinators: Christophe de la Taille, Valerio Re • Goal : provide chips and interconnections to detectors developed by other WPs • Task 1: Scientific coordination (CNRS-OMEGA, INFN-UNIBG) • Task 2 : 65 nm chips for trackers (CERN) • Fine pitch, low power, advanced digital processing • Task 3 : SiGe 130nm for calorimeters/gaseous (IN2P3) • Highly integrated charge and time measurement • Task 4 : interconnections between 65 nm chips and pixel sensors (INFN) • TSVs in 65 nm CMOS wafers, bonding of 65 nm chips to sensors, exploration of fine pitch bonding processes AIDA WP4 milestones MS4.1 Architectural review of deliverable chips in 65nm run M14 (accomplished) MS4.2 Final design review of 65nm M30 (October 2017) MS4.3 Test report of deliverable D4.1 M46 (February 2019) MS4.4 Selection of SiGe foundry M14 (accomplished) MS4.5 Final design review of deliverable chips in SiGe run M30 (October 2017) MS4.6 Test report of deliverable D4.2 M46 MS4.7 Selection of TSV process M14 (accomplished) MS4.8 Final design review of deliverable D4.3 (TSV -
Exploring the Ultimate Limits of Adiabatic Circuits
Special Session: Exploring the Ultimate Limits of Adiabatic Circuits Michael P. Frank Robert W. Brocato Thomas M. Conte Alexander H. Hsia Cognitive & Emerging RF Microsystems Dept. Schools of Computer Science and Sandia National Laboratories Computing Dept. Sandia National Laboratories Electrical & Computer Eng. Albuquerque, NM, USA Sandia National Laboratories Albuquerque, NM, USA Georgia Institute of Technology Albuquerque, NM, USA orcid:0000-0001-9751-1234 Atlanta, GA, USA Requiescat in pace [email protected] [email protected] Anirudh Jain Nancy A. Missert Karpur Shukla Brian D. Tierney School of Computer Science Nanoscale Sciences Department Laboratory for Emerging Radiation Hard CMOS Georgia Institute of Technology Sandia National Laboratories Technologies Technology Dept. Atlanta, GA, USA Albuquerque, NM, USA Brown University Sandia National Laboratories [email protected] orcid:0000-0003-2082-2282 Providence, RI, USA Albuquerque, NM, USA orcid:0000-0002-7775-6979 [email protected] Abstract—The field of adiabatic circuits is rooted in electronics I. INTRODUCTION know-how stretching all the way back to the 1960s and has poten- tial applications in vastly increasing the energy efficiency of far- In 1961, Rolf Landauer of IBM observed that there is a fun- future computing. But now, the field is experiencing an increased damental physical limit to the energy efficiency of logically ir- level of attention in part due to its potential to reduce the vulnera- reversible computational operations, meaning, those that lose bility of systems