The Venerable Triode
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Chapter 7: AC Transistor Amplifiers
Chapter 7: Transistors, part 2 Chapter 7: AC Transistor Amplifiers The transistor amplifiers that we studied in the last chapter have some serious problems for use in AC signals. Their most serious shortcoming is that there is a “dead region” where small signals do not turn on the transistor. So, if your signal is smaller than 0.6 V, or if it is negative, the transistor does not conduct and the amplifier does not work. Design goals for an AC amplifier Before moving on to making a better AC amplifier, let’s define some useful terms. We define the output range to be the range of possible output voltages. We refer to the maximum and minimum output voltages as the rail voltages and the output swing is the difference between the rail voltages. The input range is the range of input voltages that produce outputs which are not at either rail voltage. Our goal in designing an AC amplifier is to get an input range and output range which is symmetric around zero and ensure that there is not a dead region. To do this we need make sure that the transistor is in conduction for all of our input range. How does this work? We do it by adding an offset voltage to the input to make sure the voltage presented to the transistor’s base with no input signal, the resting or quiescent voltage , is well above ground. In lab 6, the function generator provided the offset, in this chapter we will show how to design an amplifier which provides its own offset. -
Power Electronics
Diodes and Transistors Semiconductors • Semiconductor devices are made of alternating layers of positively doped material (P) and negatively doped material (N). • Diodes are PN or NP, BJTs are PNP or NPN, IGBTs are PNPN. Other devices are more complex Diodes • A diode is a device which allows flow in one direction but not the other. • When conducting, the diodes create a voltage drop, kind of acting like a resistor • There are three main types of power diodes – Power Diode – Fast recovery diode – Schottky Diodes Power Diodes • Max properties: 1500V, 400A, 1kHz • Forward voltage drop of 0.7 V when on Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased. Fast Recovery Diodes • Max properties: similar to regular power diodes but recover time as low as 50ns • The following is a graph of a diode’s recovery time. trr is shorter for fast recovery diodes Schottky Diodes • Max properties: 400V, 400A • Very fast recovery time • Lower voltage drop when conducting than regular diodes • Ideal for high current low voltage applications Current vs Voltage Characteristics • All diodes have two main weaknesses – Leakage current when the diode is off. This is power loss – Voltage drop when the diode is conducting. This is directly converted to heat, i.e. power loss • Other problems to watch for: – Notice the reverse current in the recovery time graph. This can be limited through certain circuits. Ways Around Maximum Properties • To overcome maximum voltage, we can use the diodes in series. Here is a voltage sharing circuit • To overcome maximum current, we can use the diodes in parallel. -
Notes for Lab 1 (Bipolar (Junction) Transistor Lab)
ECE 327: Electronic Devices and Circuits Laboratory I Notes for Lab 1 (Bipolar (Junction) Transistor Lab) 1. Introduce bipolar junction transistors • “Transistor man” (from The Art of Electronics (2nd edition) by Horowitz and Hill) – Transistors are not “switches” – Base–emitter diode current sets collector–emitter resistance – Transistors are “dynamic resistors” (i.e., “transfer resistor”) – Act like closed switch in “saturation” mode – Act like open switch in “cutoff” mode – Act like current amplifier in “active” mode • Active-mode BJT model – Collector resistance is dynamically set so that collector current is β times base current – β is assumed to be very high (β ≈ 100–200 in this laboratory) – Under most conditions, base current is negligible, so collector and emitter current are equal – β ≈ hfe ≈ hFE – Good designs only depend on β being large – The active-mode model: ∗ Assumptions: · Must have vEC > 0.2 V (otherwise, in saturation) · Must have very low input impedance compared to βRE ∗ Consequences: · iB ≈ 0 · vE = vB ± 0.7 V · iC ≈ iE – Typically, use base and emitter voltages to find emitter current. Finish analysis by setting collector current equal to emitter current. • Symbols – Arrow represents base–emitter diode (i.e., emitter always has arrow) – npn transistor: Base–emitter diode is “not pointing in” – pnp transistor: Emitter–base diode “points in proudly” – See part pin-outs for easy wiring key • “Common” configurations: hold one terminal constant, vary a second, and use the third as output – common-collector ties collector -
ECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor DC biased at the appropriate point (Q point or operating point), linear relations can be derived between the small voltage signal and current signal. We will continue this analysis with MOSFETs, starting with the common-source amplifier. 1 Common-Source (CS) Amplifier The common-source (CS) amplifier for MOSFET is the analogue of the common- emitter amplifier for BJT. Its popularity arises from its high gain, and that by cascading a number of them, larger amplification of the signal can be achieved. 1.1 Chararacteristic Parameters of the CS Amplifier Figure 1(a) shows the small-signal model for the common-source amplifier. Here, RD is considered part of the amplifier and is the resistance that one measures between the drain and the ground. The small-signal model can be replaced by its hybrid-π model as shown in Figure 1(b). Then the current induced in the output port is i = −gmvgs as indicated by the current source. Thus vo = −gmvgsRD (1.1) By inspection, one sees that Rin = 1; vi = vsig; vgs = vi (1.2) Thus the open-circuit voltage gain is vo Avo = = −gmRD (1.3) vi Printed on March 14, 2018 at 10 : 48: W.C. Chew and S.K. Gupta. 1 One can replace a linear circuit driven by a source by its Th´evenin equivalence. -
Basic Electronics
14 Basic Electronics In this chapter, we lead you through a study of the basics of electronics. After completing the chapter, you should be able to Understand the physical structure of semiconductors. Understand the essence of the diode function. Understand the operation of diodes. Realize the applications of diodes and their use in the design of rectifiers. Understand the physical operation of bipolar junction transistors. Realize the applications of bipolar junction transistors. Understand the physical operation of field-effect transistors. Realize the application of field-effect transistors. Perform rapid analysis of transistor circuits. REFERENCES 1. Giorgio Rizzoni, Principles and Applications of Electrical Engineering, McGraw Hill, 2003. 2. J. R. Cogdel, Foundations of Electronics, Prentice Hall, 1999. 3. Donald A., Neaman, Electronic Circuit Analysis and Design, McGraw Hill, 2001. 4. Sedra/Smith, Microelectronic Circuits, Oxford, 1998. 1 Basic Electronics 2 14.1 INTRODUCTION Electronics is one of the most important fields in existence today. It has greatly influenced everything since early 1900s. Everyone nowadays realize the impact of electronics on our daily life. Table 14-1 shows many important areas with tremendous impact of electronics. Table 14-1 Various Application Areas of Electronics Area Examples of Applications Automotives Electronic ignition system, antiskid braking system, automatic suspension adjustment, performance optimization. Aerospace Airplane controls, spacecrafts, space missiles. Telecommunications Radio, television, telephones, mobile and cellular communications, satellite communications, military communications. Computers Personal computers, mainframe computers, supercomputers, calculators, microprocessors. Instrumentation Measurement equipment such as meters and oscilloscopes, medical equipment such as MRI, X- ray machines, etc. Microelectronics Microelectronic circuits, microelectromechanical systems. Power electronics Converters, Radar Air traffic control, security systems, military systems, police traffic radars. -
1999-2017 INDEX This Index Covers Tube Collector Through August 2017, the TCA "Data Cache" DVD- ROM Set, and the TCA Special Publications: No
1999-2017 INDEX This index covers Tube Collector through August 2017, the TCA "Data Cache" DVD- ROM set, and the TCA Special Publications: No. 1 Manhattan College Vacuum Tube Museum - List of Displays .........................1999 No. 2 Triodes in Radar: The Early VHF Era ...............................................................2000 No. 3 Auction Results ....................................................................................................2001 No. 4 A Tribute to George Clark, with audio CD ........................................................2002 No. 5 J. B. Johnson and the 224A CRT.........................................................................2003 No. 6 McCandless and the Audion, with audio CD......................................................2003 No. 7 AWA Tube Collector Group Fact Sheet, Vols. 1-6 ...........................................2004 No. 8 Vacuum Tubes in Telephone Work.....................................................................2004 No. 9 Origins of the Vacuum Tube, with audio CD.....................................................2005 No. 10 Early Tube Development at GE...........................................................................2005 No. 11 Thermionic Miscellany.........................................................................................2006 No. 12 RCA Master Tube Sales Plan, 1950....................................................................2006 No. 13 GE Tungar Bulb Data Manual................................................................. -
6 Insulated-Gate Field-Effect Transistors
Chapter 6 INSULATED-GATE FIELD-EFFECT TRANSISTORS Contents 6.1 Introduction ......................................301 6.2 Depletion-type IGFETs ...............................302 6.3 Enhancement-type IGFETs – PENDING .....................311 6.4 Active-mode operation – PENDING .......................311 6.5 The common-source amplifier – PENDING ...................312 6.6 The common-drain amplifier – PENDING ....................312 6.7 The common-gate amplifier – PENDING ....................312 6.8 Biasing techniques – PENDING ..........................312 6.9 Transistor ratings and packages – PENDING .................312 6.10 IGFET quirks – PENDING .............................313 6.11 MESFETs – PENDING ................................313 6.12 IGBTs ..........................................313 *** INCOMPLETE *** 6.1 Introduction As was stated in the last chapter, there is more than one type of field-effect transistor. The junction field-effect transistor, or JFET, uses voltage applied across a reverse-biased PN junc- tion to control the width of that junction’s depletion region, which then controls the conduc- tivity of a semiconductor channel through which the controlled current moves. Another type of field-effect device – the insulated gate field-effect transistor, or IGFET – exploits a similar principle of a depletion region controlling conductivity through a semiconductor channel, but it differs primarily from the JFET in that there is no direct connection between the gate lead 301 302 CHAPTER 6. INSULATED-GATE FIELD-EFFECT TRANSISTORS and the semiconductor material itself. Rather, the gate lead is insulated from the transistor body by a thin barrier, hence the term insulated gate. This insulating barrier acts like the di- electric layer of a capacitor, and allows gate-to-source voltage to influence the depletion region electrostatically rather than by direct connection. In addition to a choice of N-channel versus P-channel design, IGFETs come in two major types: enhancement and depletion. -
Differential Amplifiers
www.getmyuni.com Operational Amplifiers: The operational amplifier is a direct-coupled high gain amplifier usable from 0 to over 1MH Z to which feedback is added to control its overall response characteristic i.e. gain and bandwidth. The op-amp exhibits the gain down to zero frequency. Such direct coupled (dc) amplifiers do not use blocking (coupling and by pass) capacitors since these would reduce the amplification to zero at zero frequency. Large by pass capacitors may be used but it is not possible to fabricate large capacitors on a IC chip. The capacitors fabricated are usually less than 20 pf. Transistor, diodes and resistors are also fabricated on the same chip. Differential Amplifiers: Differential amplifier is a basic building block of an op-amp. The function of a differential amplifier is to amplify the difference between two input signals. How the differential amplifier is developed? Let us consider two emitter-biased circuits as shown in fig. 1. Fig. 1 The two transistors Q1 and Q2 have identical characteristics. The resistances of the circuits are equal, i.e. RE1 = R E2, RC1 = R C2 and the magnitude of +VCC is equal to the magnitude of �VEE. These voltages are measured with respect to ground. To make a differential amplifier, the two circuits are connected as shown in fig. 1. The two +VCC and �VEE supply terminals are made common because they are same. The two emitters are also connected and the parallel combination of RE1 and RE2 is replaced by a resistance RE. The two input signals v1 & v2 are applied at the base of Q1 and at the base of Q2. -
Transistor Biasing
Module 2:BJT Biasing Quote of the day "Peace cannot be kept by force. It can only be achieved by understanding”. ― Albert Einstein DC Load line and Bias Point • DC Load Line – For a transistor a straight line drawn on transistor output characteristics. IC – For CE circuit, the load line is a graph of collector current I versus V for a fixed C CE IB + value of R and supply voltage V C CC + VCE – Load Line? VCC VCE I C RC VBE - - V V I R – From Figure VCE=? CE CC C C – If VBE =0 then IC=0, VCE = VCC plot this point on characteristics(A). – Now assume that ICRC = VCC, i.e. IC = VCC /RC then VCE =0. Plot this point on characteristics(B). – Join points A and B by a straight line. DC Load line contd.. VCE VCC I C RC VV IC CC CE IC RC V CC B IC(sat) RC DC load line VVCE(off ) CC V A CE Example 1. Plot the dc load line for the circuit shown in Fig. Then, find the values of VCE for IC = 1, 2, 5 mA respectively. VVIRCE CC C C VCE 10 for I c 0 10 I 10mA c 110 3 IC (mA) VCE (V) 1 9 2 8 5 5 4 Example 2. For the circuit shown and Plot of the dc load line in Fig. find the values of IC for VCE = 0V and VCE for IC = 0. VVIRCE CC C C 5 I C 4.54mA V CC15V For the previous circuit shown observe the Plot of the dc load line with Rc=4.8 K find the values of IC for VCE = 0V and VCE for IC = 0. -
Pentodes Connected As Triodes
Pentodes connected as Triodes by Tom Schlangen Pentodes connected as Triodes About the author Tom Schlangen Born 1962 in Cologne / Germany Studied mechanical engineering at RWTH Aachen / Germany Employments as „safety engineering“ specialist and CIO / IT-head in middle-sized companies, now owning and running an IT- consultant business aimed at middle-sized companies Hobby: Electron valve technology in audio Private homepage: www.tubes.mynetcologne.de Private email address: [email protected] Tom Schlangen – ETF 06 2 Pentodes connected as Triodes Reasons for connecting and using pentodes as triodes Why using pentodes as triodes at all? many pentodes, especially small signal radio/TV ones, are still available from huge stock cheap as dirt, because nobody cares about them (especially “TV”-valves), some of them, connected as triodes, can rival even the best real triodes for linearity, some of them, connected as triodes, show interesting characteristics regarding µ, gm and anode resistance, that have no expression among readily available “real” triodes, because it is fun to try and find out. Tom Schlangen – ETF 06 3 Pentodes connected as Triodes How to make a triode out of a tetrode or pentode again? Or, what to do with the “superfluous” grids? All additional grids serve a certain purpose and function – they were added to a basic triode system to improve the system behaviour in certain ways, for example efficiency. We must “disable” the functions of those additional grids in a defined and controlled manner to regain triode characteristics. Just letting them “dangle in vacuum unconnected” will not work – they would charge up uncontrolled in the electron stream, leading to unpredictable behaviour. -
Lee De Forest Claimet\He Got the Idea for His Triode ''Audion" From
Lee de Forest claimet\he got the idea for his triode h ''audion" from wntching a gas flame bum. John Ambrose Flen#ng thought that story ·~just so much hot air. lreJess telegraphy held excit m WIng promise at the beginning of the twentieth century. Peo ~With Imagination could seethe po.. tentlal thot 'the rematkoble new technology offered forworlct1Nk:le com munfcotion. However, no one could hove predicted the impact that the soon-to-be-developed "osdllotlon volve" ond "oudlon" Wireless-telegra phy detector& wauid have on elec tronics technology. Backpouncl. Shortly before 1900, · Guglielmo Morconl had formed his own company to develop wireless telegraphy technology. He demon strated that wireless set-ups on ships eot~ld~messageswlth nearby stations on other ships or on land. t The Marconi Company hOd also j transmitted messages across the EhQ Jish Channel. By the end of 1901. Mar coni extended the range of his equipmenttospantheAtlan1tcOcean. It was obvlgus. 1hot ~raph ~MeS with subrhatlrie cables and ihelr lnber ent flmltations woUld soon disappear, Ships· at sea would no longer be iso la1ed. No locatlon on Eorth would. be too remote to send and receive mes sages. Clear1y; the opportunity existed tor enormous tiOOnciql gain once Jelio ble equlprrient was avoltable. To that end, 1Uned electrical circuits were developed to reduce the band width of the signals produced by ,the spark transrnlf'tirs. The resonont clfcults were also used in a receiver to select one signal from omong several trans missions. Slm~deslgn principles for resonont ontennas were also being explored and applied, However, the senstflvlty and reUabltlty of the devices used to ctetectthe Wireless signals were still hln cterlng the development of commer () cial wireless-telegraph nefWorks. -
Eimac Care and Feeding of Tubes Part 3
SECTION 3 ELECTRICAL DESIGN CONSIDERATIONS 3.1 CLASS OF OPERATION Most power grid tubes used in AF or RF amplifiers can be operated over a wide range of grid bias voltage (or in the case of grounded grid configuration, cathode bias voltage) as determined by specific performance requirements such as gain, linearity and efficiency. Changes in the bias voltage will vary the conduction angle (that being the portion of the 360° cycle of varying anode voltage during which anode current flows.) A useful system has been developed that identifies several common conditions of bias voltage (and resulting anode current conduction angle). The classifications thus assigned allow one to easily differentiate between the various operating conditions. Class A is generally considered to define a conduction angle of 360°, class B is a conduction angle of 180°, with class C less than 180° conduction angle. Class AB defines operation in the range between 180° and 360° of conduction. This class is further defined by using subscripts 1 and 2. Class AB1 has no grid current flow and class AB2 has some grid current flow during the anode conduction angle. Example Class AB2 operation - denotes an anode current conduction angle of 180° to 360° degrees and that grid current is flowing. The class of operation has nothing to do with whether a tube is grid- driven or cathode-driven. The magnitude of the grid bias voltage establishes the class of operation; the amount of drive voltage applied to the tube determines the actual conduction angle. The anode current conduction angle will determine to a great extent the overall anode efficiency.