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AMD Athlon™ Processor X86 Code Optimization Guide
AMD AthlonTM Processor x86 Code Optimization Guide © 2000 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. (“AMD”) products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual property rights is granted by this publication. Except as set forth in AMD’s Standard Terms and Conditions of Sale, AMD assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. AMD’s products are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other applica- tion in which the failure of AMD’s product could create a situation where per- sonal injury, death, or severe property or environmental damage may occur. AMD reserves the right to discontinue or make changes to its products at any time without notice. Trademarks AMD, the AMD logo, AMD Athlon, K6, 3DNow!, and combinations thereof, AMD-751, K86, and Super7 are trademarks, and AMD-K6 is a registered trademark of Advanced Micro Devices, Inc. Microsoft, Windows, and Windows NT are registered trademarks of Microsoft Corporation. -
Inside Intel® Core™ Microarchitecture Setting New Standards for Energy-Efficient Performance
White Paper Inside Intel® Core™ Microarchitecture Setting New Standards for Energy-Efficient Performance Ofri Wechsler Intel Fellow, Mobility Group Director, Mobility Microprocessor Architecture Intel Corporation White Paper Inside Intel®Core™ Microarchitecture Introduction Introduction 2 The Intel® Core™ microarchitecture is a new foundation for Intel®Core™ Microarchitecture Design Goals 3 Intel® architecture-based desktop, mobile, and mainstream server multi-core processors. This state-of-the-art multi-core optimized Delivering Energy-Efficient Performance 4 and power-efficient microarchitecture is designed to deliver Intel®Core™ Microarchitecture Innovations 5 increased performance and performance-per-watt—thus increasing Intel® Wide Dynamic Execution 6 overall energy efficiency. This new microarchitecture extends the energy efficient philosophy first delivered in Intel's mobile Intel® Intelligent Power Capability 8 microarchitecture found in the Intel® Pentium® M processor, and Intel® Advanced Smart Cache 8 greatly enhances it with many new and leading edge microar- Intel® Smart Memory Access 9 chitectural innovations as well as existing Intel NetBurst® microarchitecture features. What’s more, it incorporates many Intel® Advanced Digital Media Boost 10 new and significant innovations designed to optimize the Intel®Core™ Microarchitecture and Software 11 power, performance, and scalability of multi-core processors. Summary 12 The Intel Core microarchitecture shows Intel’s continued Learn More 12 innovation by delivering both greater energy efficiency Author Biographies 12 and compute capability required for the new workloads and usage models now making their way across computing. With its higher performance and low power, the new Intel Core microarchitecture will be the basis for many new solutions and form factors. In the home, these include higher performing, ultra-quiet, sleek and low-power computer designs, and new advances in more sophisticated, user-friendly entertainment systems. -
ATX-945G Industrial Motherboard in ATX Form Factor with Intel® 945G Chipset
ATX-945G Industrial Motherboard in ATX form factor with Intel® 945G chipset Supports Intel® Core™2 Duo, Pentium® D CPU on LGA775 socket 1066/800/533MHz Front Side Bus Intel® Graphics Media Accelerator 950 Dual Channel DDR2 DIMM, maximum 4GB Integrated PCI Express LAN, USB 2.0 and SATA 3Gb/s ATX-945G Product Overview The ATX-945G is an ATX form factor single-processor (x8) and SATA round out the package for a powerful industrial motherboard that is based on the Intel® 945G industrial PC. I/O features of the ATX-945G include a chipset with ICH7 I/O Controller Hub. It supports the Intel® 32-bit/33MHz PCI Bus, 16-bit/8MHz ISA bus, 1x PCI Express Core™2 Duo, Pentium® D, Pentium® 4 with Hyper-Threading x16 slot, 2x PCI Express x1 slots, 3x PCI slots, 1x ISA slot Technology, or Celeron® D Processor on the LGA775 socket, (shared w/ PCI), onboard Gigabit Ethernet, LPC, EIDE Ultra 1066/800/533MHz Front Side Bus, Dual Channel DDR2 DIMM ATA/100, 4 channels SATA 3Gb/s, Mini PCI card slot, UART 667/533/400MHz, up to 4 DIMMs and a maximum of 4GB. The compatible serial ports, parallel port, floppy drive port, HD Intel® Graphic Media Accelerator 950 technology with Audio, and PS/2 Keyboard and Mouse ports. 2048x1536x8bit at 75Hz resolution, PCI Express LAN, USB 2.0 Block Diagram CPU Core™2 Duo Pentium® D LGA775 package 533/800/1066MHz FSB Dual-Core Hyper-Threading 533/800/1066 MHz FSB D I M Northbridge DDR Channel A M ® x Intel 945G GMCH 2 DDRII 400/533/667 MHz D I CRT M M DB-15 DDR Channel B x 2 Discrete PCIe x16 Graphics DMI Interface 2 GB/s IDE Device -
China's Progress in Semiconductor Manufacturing Equipment
MARCH 2021 China’s Progress in Semiconductor Manufacturing Equipment Accelerants and Policy Implications CSET Policy Brief AUTHORS Will Hunt Saif M. Khan Dahlia Peterson Executive Summary China has a chip problem. It depends entirely on the United States and U.S. allies for access to advanced commercial semiconductors, which underpin all modern technologies, from smartphones to fighter jets to artificial intelligence. China’s current chip dependence allows the United States and its allies to control the export of advanced chips to Chinese state and private actors whose activities threaten human rights and international security. Chip dependence is also expensive: China currently depends on imports for most of the chips it consumes. China has therefore prioritized indigenizing advanced semiconductor manufacturing equipment (SME), which chip factories require to make leading-edge chips. But indigenizing advanced SME will be hard since Chinese firms have serious weaknesses in almost all SME sub-sectors, especially photolithography, metrology, and inspection. Meanwhile, the top global SME firms—based in the United States, Japan, and the Netherlands—enjoy wide moats of intellectual property and world- class teams of engineers, making it exceptionally difficult for newcomers to the SME industry to catch up to the leading edge. But for a country with China’s resources and political will, catching up in SME is not impossible. Whether China manages to close this gap will depend on its access to five technological accelerants: 1. Equipment components. Building advanced SME often requires access to a range of complex components, which SME firms often buy from third party suppliers and then assemble into finished SME. -
Microcode Revision Guidance August 31, 2019 MCU Recommendations
microcode revision guidance August 31, 2019 MCU Recommendations Section 1 – Planned microcode updates • Provides details on Intel microcode updates currently planned or available and corresponding to Intel-SA-00233 published June 18, 2019. • Changes from prior revision(s) will be highlighted in yellow. Section 2 – No planned microcode updates • Products for which Intel does not plan to release microcode updates. This includes products previously identified as such. LEGEND: Production Status: • Planned – Intel is planning on releasing a MCU at a future date. • Beta – Intel has released this production signed MCU under NDA for all customers to validate. • Production – Intel has completed all validation and is authorizing customers to use this MCU in a production environment. -
Technology Roadmap for 22Nm CMOS and Beyond
Technology Roadmap for 22nm CMOS and beyond June 1, 2009 IEDST 2009@IIT-Bombay Hiroshi Iwai Tokyo Institute of Technology 1 Outline 1. Scaling 2. ITRS Roadmap 3. Voltage Scaling/ Low Power and Leakage 4. SRAM Cell Scaling 5.Roadmap for further future as a personal view 2 1. Scaling 3 Scaling Method: by R. Dennard in 1974 1 Wdep: Space Charge Region (or Depletion Region) Width 1 1 SDWdep has to be suppressed 1 Otherwise, large leakage Wdep between S and D I Leakage current Potential in space charge region is high, and thus, electrons in source are 0 attracted to the space charge region. 0 V 1 K=0.7 X , Y, Z :K, V :K, Na : 1/K for By the scaling, Wdep is suppressed in proportion, example and thus, leakage can be suppressed. K Good scaled I-V characteristics K K Wdep V/Na K Wdep I I : K : K 0 0K V 4 Downscaling merit: Beautiful! Geometry & L , W g g K Scaling K : K=0.7 for example Supply voltage Tox, Vdd Id = vsatWgCo (Vg‐Vth) Co: gate C per unit area Drive current I d K –1 ‐1 ‐1 in saturation Wg (tox )(Vg‐Vth)= Wgtox (Vg‐Vth)= KK K=K Id per unit Wg Id/µm 1 Id per unit Wg = Id / Wg= 1 Gate capacitance Cg K Cg = εoεoxLgWg/tox KK/K = K Switching speed τ K τ= CgVdd/Id KK/K= K Clock frequency f 1/K f = 1/τ = 1/K Chip area Achip α α: Scaling factor In the past, α>1 for most cases Integration (# of Tr) N α/K2 N α/K2 = 1/K2 , when α=1 Power per chip P α fNCV2/2 K‐1(αK‐2)K (K1 )2= α = 1, when α=1 5 k= 0.7 and α =1 k= 0.72 =0.5 and α =1 Single MOFET Vdd 0.7 Vdd 0.5 Lg 0.7 Lg 0.5 Id 0.7 Id 0.5 Cg 0.7 Cg 0.5 P (Power)/Clock P (Power)/Clock 0.73 = 0.34 0.53 = 0.125 τ (Switching time) 0.7 τ (Switching time) 0.5 Chip N (# of Tr) 1/0.72 = 2 N (# of Tr) 1/0.52 = 4 f (Clock) 1/0.7 = 1.4 f (Clock) 1/0.5 = 2 P (Power) 1 P (Power) 1 6 - The concerns for limits of down-scaling have been announced for every generation. -
Asrock G41C-VS Motherboard, a Reliable Motherboard Produced Under Asrock’S Consistently Stringent Quality Control
G41C-VS User Manual Version 1.0 Published October 2009 Copyright©2009 ASRock INC. All rights reserved. 1 Copyright Notice: No part of this manual may be reproduced, transcribed, transmitted, or translated in any language, in any form or by any means, except duplication of documentation by the purchaser for backup purpose, without written consent of ASRock Inc. Products and corporate names appearing in this manual may or may not be regis- tered trademarks or copyrights of their respective companies, and are used only for identification or explanation and to the owners’ benefit, without intent to infringe. Disclaimer: Specifications and information contained in this manual are furnished for informa- tional use only and subject to change without notice, and should not be constructed as a commitment by ASRock. ASRock assumes no responsibility for any errors or omissions that may appear in this manual. With respect to the contents of this manual, ASRock does not provide warranty of any kind, either expressed or implied, including but not limited to the implied warran- ties or conditions of merchantability or fitness for a particular purpose. In no event shall ASRock, its directors, officers, employees, or agents be liable for any indirect, special, incidental, or consequential damages (including damages for loss of profits, loss of business, loss of data, interruption of business and the like), even if ASRock has been advised of the possibility of such damages arising from any defect or error in the manual or product. This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) this device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. -
MBP4ASG41M-VS3.Pdf
ASRock > G41M-VS3 Página 1 de 2 Home | Global / English [Change] About ASRock Products News Support Forum Download Awards Dealer Zone Where to Buy Products G41M-VS3 Motherboard Series »G41M-VS3 Translate »Overview & Specifications ■ Supports FSB1333/1066/800/533 MHz CPUs »Download ■ Supports Dual Channel DDR3 1333(OC) ■ Intel® Graphics Media Accelerator X4500, Pixel Shader 4.0, DirectX 10, Max. shared »Manual memory 1759MB »FAQ ■ EuP Ready »CPU Support List ■ Supports ASRock XFast RAM, XFast LAN, XFast USB Technologies ■ Supports Instant Boot, Instant Flash, OC DNA, ASRock OC Tuner (Up to 158% CPU »Memory QVL frequency increase) »Beta Zone ■ Supports Intelligent Energy Saver (Up to 20% CPU Power Saving) ■ Free Bundle : CyberLink DVD Suite - OEM and Trial; Creative Sound Blaster X-Fi MB - Trial This model may not be sold worldwide. Please contact your local dealer for the availability of this model in your region. Product Specifications General - LGA 775 for Intel® Core™ 2 Extreme / Core™ 2 Quad / Core™ 2 Duo / Pentium® Dual Core / Celeron® Dual Core / Celeron, supporting Penryn Quad Core Yorkfield and Dual Core Wolfdale processors - Supports FSB1333/1066/800/533 MHz CPU - Supports Hyper-Threading Technology - Supports Untied Overclocking Technology - Supports EM64T CPU - Northbridge: Intel® G41 Chipset - Southbridge: Intel® ICH7 - Dual Channel DDR3 memory technology - 2 x DDR3 DIMM slots - Supports DDR3 1333(OC)/1066/800 non-ECC, un-buffered memory Memory - Max. capacity of system memory: 8GB* *Due to the operating system limitation, the actual memory size may be less than 4GB for the reservation for system usage under Windows® 32-bit OS. For Windows® 64-bit OS with 64-bit CPU, there is no such limitation. -
Performance and Energy Efficient Network-On-Chip Architectures
Linköping Studies in Science and Technology Dissertation No. 1130 Performance and Energy Efficient Network-on-Chip Architectures Sriram R. Vangal Electronic Devices Department of Electrical Engineering Linköping University, SE-581 83 Linköping, Sweden Linköping 2007 ISBN 978-91-85895-91-5 ISSN 0345-7524 ii Performance and Energy Efficient Network-on-Chip Architectures Sriram R. Vangal ISBN 978-91-85895-91-5 Copyright Sriram. R. Vangal, 2007 Linköping Studies in Science and Technology Dissertation No. 1130 ISSN 0345-7524 Electronic Devices Department of Electrical Engineering Linköping University, SE-581 83 Linköping, Sweden Linköping 2007 Author email: [email protected] Cover Image A chip microphotograph of the industry’s first programmable 80-tile teraFLOPS processor, which is implemented in a 65-nm eight-metal CMOS technology. Printed by LiU-Tryck, Linköping University Linköping, Sweden, 2007 Abstract The scaling of MOS transistors into the nanometer regime opens the possibility for creating large Network-on-Chip (NoC) architectures containing hundreds of integrated processing elements with on-chip communication. NoC architectures, with structured on-chip networks are emerging as a scalable and modular solution to global communications within large systems-on-chip. NoCs mitigate the emerging wire-delay problem and addresses the need for substantial interconnect bandwidth by replacing today’s shared buses with packet-switched router networks. With on-chip communication consuming a significant portion of the chip power and area budgets, there is a compelling need for compact, low power routers. While applications dictate the choice of the compute core, the advent of multimedia applications, such as three-dimensional (3D) graphics and signal processing, places stronger demands for self-contained, low-latency floating-point processors with increased throughput. -
Benchmarking the Intel FPGA SDK for Opencl Memory Interface
The Memory Controller Wall: Benchmarking the Intel FPGA SDK for OpenCL Memory Interface Hamid Reza Zohouri*†1, Satoshi Matsuoka*‡ *Tokyo Institute of Technology, †Edgecortix Inc. Japan, ‡RIKEN Center for Computational Science (R-CCS) {zohour.h.aa@m, matsu@is}.titech.ac.jp Abstract—Supported by their high power efficiency and efficiency on Intel FPGAs with different configurations recent advancements in High Level Synthesis (HLS), FPGAs are for input/output arrays, vector size, interleaving, kernel quickly finding their way into HPC and cloud systems. Large programming model, on-chip channels, operating amounts of work have been done so far on loop and area frequency, padding, and multiple types of blocking. optimizations for different applications on FPGAs using HLS. However, a comprehensive analysis of the behavior and • We outline one performance bug in Intel’s compiler, and efficiency of the memory controller of FPGAs is missing in multiple deficiencies in the memory controller, leading literature, which becomes even more crucial when the limited to significant loss of memory performance for typical memory bandwidth of modern FPGAs compared to their GPU applications. In some of these cases, we provide work- counterparts is taken into account. In this work, we will analyze arounds to improve the memory performance. the memory interface generated by Intel FPGA SDK for OpenCL with different configurations for input/output arrays, II. METHODOLOGY vector size, interleaving, kernel programming model, on-chip channels, operating frequency, padding, and multiple types of A. Memory Benchmark Suite overlapped blocking. Our results point to multiple shortcomings For our evaluation, we develop an open-source benchmark in the memory controller of Intel FPGAs, especially with respect suite called FPGAMemBench, available at https://github.com/ to memory access alignment, that can hinder the programmer’s zohourih/FPGAMemBench. -
Lecture 5: Scaled MOSFETS for Ics
Lecture 5: Scaled MOSFETS for ICs MSE 6001, Semiconductor Materials Lectures Fall 2006 5 MOSFETS and scaling Silicon is a mediocre semiconductor, and several other semiconductors have better electrical and optical properties. However, the very high quality of the electrical properties of the silicon-silicon dioxide interface allows very good metal-oxide-semiconductor field-effect transistors (MOSFETs) to be fabricated. These devices have several properties, such as operation frequency and power con- sumption, that improve as their size is scaled down to smaller dimensions, which also allows more transistors to be packed onto a chip. The smaller sizes are achieved using higher-resolution pho- tolithography, which is improved by steadily improving the fabrication technologies. The trends of steadily improving performance and greater integration density with time are generically refered to A 70 Mbit SRAM test vehicle with >as0.5 “Moore’s billion trans Law”.istors Of course, scaling has to end eventually, somewhere before the scale of atoms and incorporating all of the features described in this paper has been fabricated on this technologyis. reached.The aggressive de- sign rules allow for a small 0.57Pm2 6-T SRAM cell that is also compatible with high performance logic processing. A top view of the cell after poly patterni5.1ng is show Basicn in Figur MOSFETe 12. In addition to small size, this cell has a robust static noise margin down to 0.7V VDD to alloMOSFETsw low voltage turnopera- on and off via the non-linear gate capacitor between the gate electrode and the tion (Fig. 13). Figure 14 is a Shmosubstrate.o plot for the The 70 M MOSFETb of Fig. -
By Erika Azabache Villar a Thesis Submitted in Partial Fulfillment of The
SMALLER/FASTER DELTA-SIGMA DIGITAL PIXEL SENSORS by Erika Azabache Villar A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Integrated Circuits and Systems Department of Electrical and Computer Engineering University of Alberta c Erika Azabache Villar, 2016 Abstract A digital pixel sensor (DPS) array is an image sensor where each pixel has an analog-to-digital converter (ADC). Recently, a logarithmic delta-sigma (ΔΣ) DPS array, using first-order ΔΣ ADCs, achieved wide dynamic range and high signal-to-noise-and-distortion ratios at video rates, requirements that are difficult to meet using conventional image sensors. However, this state-of-the-art ΔΣ DPS design is either too large for some applications, such as optical imag- ing, or too slow for others, such as gamma imaging. Consequently, this master’s thesis investi- gates smaller or faster ΔΣ DPS designs, relative to the state of the art. All designs are validated through simulations. Commercial image sensors, for optical and gamma imaging, are used as targeted baselines to establish competitive specifications. To achieve a smaller pixel, process scaling is exploited. Three logarithmic ΔΣ DPS designs are presented for 180, 130, and 65 nm fabrication processes, demonstrating a path to competitiveness for the optical imaging market. Decimator and readout circuits are improved, compared to previous work, while reducing area, and capacitors in the modulator prove to be the limiting factor in deep-submicron processes. Area trends are used to construct a roadmap to even smaller pixels. To achieve a faster pixel, a higher-order ΔΣ architecture is exploited.