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Strain Engineering
Mobility Enhancement of Strained Si Transistors by Transfer Printing on Plastic Substrates
Stress Mapping in Strain-Engineered Silicon P-Type MOSFET Device: a Comparison Between Process Simulation and Experiments Christophe Krzeminski
Strain Engineering for Advanced Transistor Structure
Maximizing Uniaxial Tensile Strain in Large-Area Silicon-On-Insulator Islands on Compliant Substrates ͒ R
Elastic Strain Engineering in Silicon and Silicon-Germanium Nanomembranes
A Survey on Multi Gate MOSFETS
Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain
Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET Performance Haizhou Yin, Member, IEEE, Karl D
FINAL PROGRAM Welcome To
Stress Modeling of Nanoscale Mosfet
Modeling of Modern Mosfets with Strain
Technologies for Enhancing Multi-Gate Si MOSFET Performance
A 90Nm High Volume Manufacturing Logic Technology Featuring Novel 45Nm Gate Length Strained Silicon CMOS Transistors T
Strain-Induced Effects in Advanced Mosfets
Presentation Title Text Title Text Continued
Elastic Strain Engineering for Unprecedented Materials Properties Ju Li , Zhiwei Shan , and Evan Ma , Guest Editors
Effectiveness of Strain Solutions for Next-Generation Mosfets
Strain for CMOS Performance Improvement
Top View
Direct-Bandgap Light-Emitting Germanium in Tensilely Strained Nanomembranes
Strained Silicon-On-Insulator – Fabrication and Characterization
Band-Gap Engineering of Germanium Monolithic Light Sources Using Tensile Strain and N-Type Doping
Meeting Program for Details, Or Stop by the ECS Registration Area Or ECS Central, Located on the Concourse Level of the Hotel, If You Have Any Questions
22 Nm Device Architecture and Performance Elements