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Mobility Enhancement of Strained Si Transistors by Transfer Printing on Plastic Substrates
OPEN NPG Asia Materials (2016) 8, e256; doi:10.1038/am.2016.31 www.nature.com/am ORIGINAL ARTICLE Mobility enhancement of strained Si transistors by transfer printing on plastic substrates Wonho Lee1, Yun Hwangbo2, Jae-Hyun Kim2 and Jong-Hyun Ahn1 Strain engineering has been utilized to overcome the limitation of geometric scaling in Si-based thin-film transistor (TFT) technology by significantly improving carrier mobility. However, current strain engineering methods have several drawbacks: they generate atomic defects in the interface between Si and strain inducers, they involve high-cost epitaxial depositions and they are difficult to apply to flexible electronics with plastic substrates. Here, we report the formation of a strained Si membrane with oxidation-induced residual strain by releasing a host Si substrate of a silicon-on-insulator (SOI) wafer. The construction of the suspended Si/SiO2 structures induces 40.5% tensile strain on the top Si membrane. The fabricated TFTs with strained Si channels are transferred onto plastics using a roll-based transfer technique, and they exhibit a mobility enhancement factor of 1.2–1.4 compared with an unstrained Si TFT. NPG Asia Materials (2016) 8, e256; doi:10.1038/am.2016.31; published online 25 March 2016 INTRODUCTION substrates. A strained Si nanomembrane is fabricated by releasing the A critical path in the development of advanced silicon electronics bilayer of Si and SiO2 from the host Si layer of a silicon-on-insulator involves a reduction in the dimensions of device geometries such as (SOI) wafer. The oxidation-induced compressive strain in the SiO2 the channel thickness, channel length and gate dielectric thickness to layer of the SOI wafer is activated by forming a suspended structure increase the operating speed with lower power consumption and via the etching of the host Si that leads to planar expansion of the 1–4 the density of integration in circuits. -
Stress Mapping in Strain-Engineered Silicon P-Type MOSFET Device: a Comparison Between Process Simulation and Experiments Christophe Krzeminski
Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments Christophe Krzeminski To cite this version: Christophe Krzeminski. Stress mapping in strain-engineered silicon p-type MOSFET device: A com- parison between process simulation and experiments. Journal of vaccum Science and Technology B, 2012, 30 (2), pp.022203-1. 10.1116/1.3683079. hal-00624131 HAL Id: hal-00624131 https://hal.archives-ouvertes.fr/hal-00624131 Submitted on 13 Feb 2012 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. APS/xxxxx Stress mapping in strain-engineered silicon pMOSFET device using process simulation C. Krzeminski1 Institut d’Electronique de Micro´electronique et de Nanotechnologie (IEMN-UMR CNRS 8520), D´epartement ISEN, Avenue Poincar´e, 59650 Villeneuve d’Ascqa) Strain engineering is the main technological booster used by semiconductor companies for the 65 and 45nm technology nodes to improve the channel mobility and the electrical performance of logic devices. For 32 and 22nm nodes, intense research work focuses on the integration and optimisation of these different techniques by cumulating the effects of different stressors. To estimate the level and the distribution of the stress field generated in the transistor channel by such multiple processing steps is a complex issue. -
Electrodeposition of Highly Ordered Macroporous Iridium Oxide Through Self- Assembled Colloidal Templates
Electrodeposition of highly ordered macroporous iridium oxide through self- assembled colloidal templates Jin Hu,a Mamdouh Abdelsalam,a Philip Bartlett,a Robin Cole,b Yoshihiro Sugawara,b Jeremy Baumberg,b Sumeet Mahajana,b and Guy Denuaulta aSchool of Chemistry, University of Southampton, Southampton UK SO17 1BJ. E- mail: [email protected] bNanoPhotonics Centre, Department of Physics, University of Cambridge, Cambridge CB3 0HE Please cite this paper as: Journal of Materials Chemistry, 2009, 19, 3855-3858 The publisher’s version of this paper is available here: http://dx.doi.org/10.1039/B900279K Related articles by Dr Guy Denuault can be found below: S.A.G. Evans, J.M. Elliott, L.M. Andrews, P.N. Bartlett, P.J. Doyle, G. Denuault, Detection of hydrogen peroxide at mesoporous platinum microelectrodes, Anal. Chem., 74 (2002) 1322-1326. (doi: 10.1021/ac011052p) T. Imokawa, K.-J. Williams, G. Denuault, Fabrication and Characterization of Nanostructured Pd Hydride pH Microelectrodes, Anal. Chem., 78 (2006) 265-271. (doi: 10.1021/ac051328j) CREATED USING THE RSC ARTICLE TEMPLATE (VER. 3.1) - SEE WWW.RSC.ORG/ELECTRONICFILES FOR DETAILS ARTICLE TYPE www.rsc.org/xxxxxx | XXXXXXXX Electrodeposition of highly ordered macroporous iridium oxide through self-assembled colloidal templates Jin Hu,a Mamdouh Abdelsalam,a Philip Bartlett,a Robin Cole,b Yoshihiro Sugawara,b Jeremy Baumberg,b Sumeet Mahajanb and Guy Denuault*a 5 Received (in XXX, XXX) Xth XXXXXXXXX 200X, Accepted Xth XXXXXXXXX 200X First published on the web Xth XXXXXXXXX 200X DOI: 10.1039/b000000x Iridium oxide electrodeposited through a self-assembled colloidal template has an inverse opal structure. -
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Nano and Giga [Front]
NANO & GIGA CHALLENGES 2007 12-16 MARCH TEMPE, AZ ARIZONA STATE UNIVERSITY NANO & GIGA CHALLENGES 2007 will provide a forum for academics, students, industrial researches, investors and business development professionals from around the world to discuss cutting-edge nanotechnology as it relates to advanced silicon based micro- and optoelectronics. CMOS technology has sustained exponential progress (Moore's Law) for four decades. However, scientists and engineers agree that this progress will run into what is called the red brick wall of technical and economic limitations some time during the next decade. The use of nanotechnology is vital to the development of future electronics and photonics. DON’T MISS YOUR CHANCE TO BE PART OF THIS UNIQUE INTERNATIONAL FORUM. 31nm ADDITIONAL INFO >> VISIT www.AtomicScaleDesign.Net/ngc2007 eMAIL [email protected] << SELECTED SPEAKERS >> NICOLAAS BLOEMBERGEN > Professor, University of Arizona, Nobel Laureate, Physics, 1981 JOHN POLYANI > Professor, University of Toronto, Nobel Laureate, Chemistry, 1986 HIROSHI IWAI > Professor, Tokyo Institute of Technology MARK REED > Distinguished Professor, Yale University JEREMY BAUMBERG > Professor, University of Southampton OTTO SANKEY > Professor, Arizona State University ROBERT CHAU > Director, Transistor Research and Nanotechnology, Intel YOSHIRO HIRAYAMA > Executive manager, NTT Basic Research Laboratories KERYN LIAN > Senior Fellow, Motorola Labs STANLEY WILLIAMS > Director, Quantum Science Research, HP Labs NIKOLAI ZHITENEV > Senior Research Fellow, -
Professor Sir Colin Humphreys CBE Freng FRS
Monash Centre for Electron Microscopy 10th Anniversary Lecture Professor Sir Colin Humphreys CBE FREng FRS Chair: Dr Alan Finkel AO FAA FTSE Thursday 22 November 2018 Lecture Theatre G81 Learning and Teaching Building 5.30pm 19 Ancora Imparo Way Clayton Campus How electron microscopy can help to save energy, save lives, create jobs and improve our health Electron microscopes can not only image single atoms, they can identify what the atom is and even determine how it is bonded to other atoms. This talk will give some case studies from Colin Humphreys’ research group going from basic science through to commercial applications, featuring two of the most important new materials: gallium nitride and graphene. Electron microscopy has played a key role in the rapid advance of gallium nitride (GaN) LED lighting. LED lighting will soon become the dominant form of lighting worldwide, when it will save 10-15% of all electricity and up to 15% of carbon emissions from power stations. Electron microscopy has enabled us to understand the complex basic science of GaN LEDs, improve their efficiency and reduce their cost. The Humphreys’ group has been very involved in this. LEDs based on their patented research are being manufactured in the UK, creating 150 jobs. Next generation GaN LEDs will have major health benefits and future UV LEDs could save millions of lives through purifying water. Graphene has been hailed as the “wonder material”, stronger than steel, more conductive than copper, transparent and flexible. However, so far no graphene electronic devices have been manufactured because of the lack of good-quality large-area graphene. -
Dr. SHAHAB AHMAD
Dr. SHAHAB AHMAD Assistant Professor Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi-110 025, India. Email: [email protected] [email protected] ACADEMICS Ph.D. Physics (July 2010-2014): Department of Physics, Indian Institute of Technology Delhi, New Delhi-India (www.iitd.ac.in) M.Tech. (Nanotechnology) (2008-2010): Department of Applied Physics, Aligarh Muslim University, Aligarh, UP, India (www.amu.ac.in) M.Sc. (Physics) (2006-2008): Department of Physics, Aligarh Muslim University, India (www.amu.ac.in) EXPERIENCE (After PhD Thesis Submission) Assistant Professor (30th June 2017- Till present, Permanent) Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi, India. (https://www.jmi.ac.in/cnn) Research Associate (3rd Nov 2014- 30th June 2017) ~ 2 years and 8 months Research Area: Energy Storage and Optoelectronic Devices Supervisor: Dr. Michael De Volder, NanoManufacturing Lab, Institute for Manufacturing, Department of Engineering, University of Cambridge, UK. (www.nanomanufacturing.eng.cam.ac.uk) Project Associate (19th Aug 2014-2nd Nov 2014) ~ 2.5 months Supervisor: Prof. G. Vijaya Prakash, Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi, New Delhi-India. (www.iitd.ac.in) Visiting Scientist (18th May 2014-17th Aug 2014) ~ 3 months Host: Prof. Jeremy J. Baumberg (FRS), Nanophotonics Centre, Cavendish Laboratory, Department of Physics, University of Cambridge, UK. (http://www.np.phy.cam.ac.uk/) AWARDS AND ACHEIVEMENTS 1. Distinction in Doctoral Research Award from Indian Institute of Technology - Delhi (April 2016). 2. Best Oral Presentation Award, “International Winter School in Frontiers of Materials Science - 2018”, JNCASR, Bangalore, India (3-7 Dec 2018). -
Strain Engineering for Advanced Transistor Structure
STRAIN ENGINEERING FOR ADVANCED TRANSISTOR STRUCTURE TAN KIAN MING NATIONAL UNIVERSITY OF SINGAPORE 2008 STRAIN ENGINEERING FOR ADVANCED TRANSISTOR STRUCTURE TAN KIAN MING (B. ENG. (HONS.)), NUS (M. ENG.), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTING ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2008 Acknowledgements First and foremost, I would like to thank my supervisor, Dr. Yeo Yee-Chia who has provided much support and encouragement throughout the course of my Ph.D candidature. I have benefited a lot from the numerous discussions that we have. I would also like to thank all my co-supervisors, A/P Yoo Won Jong, Dr Lap Chan, Dr Narayanan Balasubramanian and Dr Patrick Lo who have always been generous in helping me in whatever ways they can. In addition, I will also like to thank A/P Ganesh S. Samudra for giving his advice and suggestions during our research group meetings. Special thanks to Dr Yang Mingchu for constantly provide the support and help, which we need in using the FCVA system. My work is mainly done in 2 laboratories in this period of time, Semiconductor Processing Technology (SPT) Lab at the Institute of Microelectronics (IME), and the Silicon Nano Device Lab (SNDL) at the National University of Singapore (NUS). I am very grateful to all the staffs in both laboratories as they have provided assistance in one way or another which made my work possible. I have also learnt a lot from the friends that I have made from Chartered, SNDL and IME. In particularly, I am extremely thankful that the development of FinFET process flow is done together with Tsung-Yang (Jason). -
Table of Contents
Table of Contents Schedule-at-a-Glance . 2 FiO + LS Chairs’ Welcome Letters . 3 General Information . 5 Conference Materials Access to Technical Digest Papers . 7 FiO + LS Conference App . 7 Plenary Session/Visionary Speakers . 8 Science & Industry Showcase Theater Programming . 12 Networking Area Programming . 12 Participating Companies . 14 OSA Member Zone . 15 Special Events . 16 Awards, Honors and Special Recognitions FiO + LS Awards Ceremony & Reception . 19 OSA Awards and Honors . 19 2019 APS/Division of Laser Science Awards and Honors . 21 2019 OSA Foundation Fellowship, Scholarships and Special Recognitions . 21 2019 OSA Awards and Medals . 22 OSA Foundation FiO Grants, Prizes and Scholarships . 23 OSA Senior Members . 24 FiO + LS Committees . 27 Explanation of Session Codes . 28 FiO + LS Agenda of Sessions . 29 FiO + LS Abstracts . 34 Key to Authors and Presiders . 94 Program updates and changes may be found on the Conference Program Update Sheet distributed in the attendee registration bags, and check the Conference App for regular updates . OSA and APS/DLS thank the following sponsors for their generous support of this meeting: FiO + LS 2019 • 15–19 September 2019 1 Conference Schedule-at-a-Glance Note: Dates and times are subject to change. Check the conference app for regular updates. All times reflect EDT. Sunday Monday Tuesday Wednesday Thursday 15 September 16 September 17 September 18 September 19 September GENERAL Registration 07:00–17:00 07:00–17:00 07:30–18:00 07:30–17:30 07:30–11:00 Coffee Breaks 10:00–10:30 10:00–10:30 10:00–10:30 10:00–10:30 10:00–10:30 15:30–16:00 15:30–16:00 13:30–14:00 13:30–14:00 PROGRAMMING Technical Sessions 08:00–18:00 08:00–18:00 08:00–10:00 08:00–10:00 08:00–12:30 15:30–17:00 15:30–18:30 Visionary Speakers 09:15–10:00 09:15–10:00 09:15–10:00 09:15–10:00 LS Symposium on Undergraduate 12:00–18:00 Research Postdeadline Paper Sessions 17:15–18:15 SCIENCE & INDUSTRY SHOWCASE Science & Industry Showcase 10:00–15:30 10:00–15:30 See page 12 for complete schedule of programs . -
Maximizing Uniaxial Tensile Strain in Large-Area Silicon-On-Insulator Islands on Compliant Substrates ͒ R
JOURNAL OF APPLIED PHYSICS 100, 023537 ͑2006͒ Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates ͒ R. L. Petersona Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08540 and Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 K. D. Hobart Naval Research Laboratory, Washington, DC 20375 H. Yin Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08540 and Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 F. J. Kub Naval Research Laboratory, Washington, DC 20375 J. C. Sturm Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08540 and Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 ͑Received 24 November 2005; accepted 3 May 2006; published online 31 July 2006; publisher error corrected 27 September 2006͒ Recently we have demonstrated a process for generating uniaxial tensile strain in silicon. In this work, we generate uniaxially strained silicon and anisotropically strained silicon germanium on insulator with strain in both ͗100͘ and ͗110͘ in-plane directions. The strain is uniform over fairly large areas, and relaxed silicon-germanium alloy buffers are not used. The magnitude of uniaxial strain generated by the process is very dependent on the in-plane crystal direction, and can be modeled accurately using the known mechanical properties of silicon and germanium. A maximum uniaxial silicon strain of 1.0% in the ͗100͘ direction is achieved. Numerical simulations of the dynamic strain generation process are used to identify process windows for achieving maximum uniaxial silicon strain for different structural geometries. -
Colin Humphreys Is the Goldsmiths' Professor of Materials Science
Colin Humphreys is the Goldsmiths' Professor of Materials Science, Cambridge University, Professor of Experimental Physics at the Royal Institution in London, and a Fellow of Selwyn College Cambridge. He is also the Director of the Rolls Royce University Technology Centre at Cambridge on Ni-base superalloys for turbine blades for aerospace engines and the Director of the Cambridge Gallium Nitride Centre. He was the President of the Institute of Materials, Minerals and Mining for the two years 2002 - 2003. He is now the Chairman of its Managing Board. He is a Fellow of the Royal Academy of Engineering and a Member of the Academia Europaea, a Liveryman of the Goldsmiths' Company and a Member of the Court of the Armourers and Brasiers' Company and a Freeman of the City of London. He is a Member of the John Templeton Foundation in the USA and the Honorary President of the Canadian College for Chinese Studies in Victoria, Canada. He was President of the Physics Section of the British Association for the Advancement of Science in 1998 - 99 and Fellow in the Public Understanding of Physics, Institute of Physics 1997 - 99. He has received medals from the Institute of Materials, the Institute of Physics, and the Royal Society of Arts, and given various Memorial Lectures throughout the world. In 2001 he was awarded an honorary D.Sc. from the University of Leicester and the European Materials Gold Medal, and in 2003 he received the Robert Franklin Mehl Gold Medal from The Materials, Minerals and Metals Society in the USA. He graduated in Physics from Imperial College, London, did his Ph.D. -
Graphene's 3D Nature
Graphene's 3D Nature Contrary to what is believed, monolayer graphene (a sheet of carbon just one atomic layer thick) has 3D mechanical properties and they can now be properly measured and meaningfully described thanks to high-pressure Raman spectra measurements on the material. [47] The team has turned graphene oxide (GO) into a soft, moldable and kneadable play dough that can be shaped and reshaped into free-standing, three-dimensional structures. [46] A team of researchers based at The University of Manchester have found a low cost method for producing graphene printed electronics, which significantly speeds up and reduces the cost of conductive graphene inks. [45] Graphene-based computer components that can deal in terahertz “could be used, not in a normal Macintosh or PC, but perhaps in very advanced computers with high processing rates,” Ozaki says. This 2-D material could also be used to make extremely high-speed nanodevices, he adds. [44] Printed electronics use standard printing techniques to manufacture electronic devices on different substrates like glass, plastic films, and paper. [43] A tiny laser comprising an array of nanoscale semiconductor cylinders (see image) has been made by an all-A*STAR team. [42] A new instrument lets researchers use multiple laser beams and a microscope to trap and move cells and then analyze them in real-time with a sensitive analysis technique known as Raman spectroscopy. [41] All systems are go for launch in November of NASA's Global Ecosystem Dynamics Investigation (GEDI) mission, which will use high-resolution laser ranging to study Earth's forests and topography from the International Space Station (ISS). -
Elastic Strain Engineering in Silicon and Silicon-Germanium Nanomembranes
Elastic Strain Engineering in Silicon and Silicon-Germanium Nanomembranes By Deborah Marie Paskiewicz A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Materials Science) at the UNIVERSITY OF WISCONSIN-MADISON 2012 Date of final oral examination: 11/14/12 The dissertation is approved by the following members of the Final Oral Committee: Max G. Lagally, Professor, Materials Science and Engineering Mark A. Eriksson, Professor, Physics Thomas F. Kuech, Professor, Chemical and Biological Engineering Paul G. Evans, Associate Professor, Materials Science and Engineering Irena Knezevic, Associate Professor, Electrical and Computer Engineering ©Copyright by Deborah Marie Paskiewicz 2012 All Rights Reserved i Abstract Elastic Strain Engineering in Silicon and Silicon-Germanium Nanomembranes Deborah M. Paskiewicz Under the supervision of Professor Max G. Lagally At the University of Wisconsin-Madison Strain in crystalline materials alters the atomic symmetry, thereby changing materials properties. Controlling the strain (its magnitude, direction, extent, periodicity, symmetry, and nature) allows tunability of these new properties. Elastic strain engineering in crystalline nanomembranes (NMs) provides ways to induce and relax strain in thin sheets of single- crystalline materials without exposing the material to the formation of extended defects. I use strain engineering in NMs in two ways: (1) elastic strain sharing between multiple layers using the crystalline symmetry of the layers to induce unique strain distributions, and (2) complete elastic relaxation of single-crystalline alloy NMs. In both cases, NM strain engineering methods enable the introduction of unique strain profiles or strain relaxation in ways not compatible with conventional bulk processing, where strain destroys the long-range crystallinity.