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Important Notice Dear Customer, on 7 February 2017 The Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMN27XPE 20 V, single P-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Fast switching • Trench MOSFET technology • 2 kV ESD protection 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -5.7 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate 1 2 3 G 4 S source TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN27XPE TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN27XPE WC 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -5.7 A VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -3.5 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -22 A Ptot total power dissipation Tamb = 25 °C [2] - 530 mW [1] - 1250 mW Tsp = 25 °C - 8330 mW PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 2 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.3 A ESD maximum rating VESD electrostatic discharge voltage HBM [3] - 2000 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 017aaa124 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C) Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 3 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET 017aaa760 -102 Limit R = V /I ID DSon DS D (A) -10 tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C tp = 100 ms DC; T = 25 °C; -1 amb -10 drain mounting pad 6 cm2 -10-2 0 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance in free air [1] - 206 237 K/W from junction to [2] - 86 100 K/W ambient [3] - 52 60 K/W Rth(j-sp) thermal resistance - 13 15 K/W from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 4 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET 017aaa761 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa762 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V breakdown voltage VGSth gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V voltage IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 5 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA RDSon drain-source on-state VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ resistance VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 56 64 mΩ VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 39 44 mΩ gfs forward VDS = -10 V; ID = -3 A; Tj = 25 °C - 16 - S transconductance Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -3 A; VGS = -4.5 V; - 15 22.5 nC Tj = 25 °C QGS gate-source charge - 3 - nC QGD gate-drain charge - 3 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 1770 - pF Tj = 25 °C Coss output capacitance - 254 - pF Crss reverse transfer - 180 - pF capacitance td(on) turn-on delay time VDS = -10 V; ID = -3 A; VGS = -4.5 V; - 15 - ns RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 22 - ns td(off) turn-off delay time - 37 - ns tf fall time - 29 - ns Source-drain diode VSD source-drain voltage IS = -1.3 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V 017aaa763 017aaa129 -24 - 10- 3 -8 V -4.5 V -3 V VGS = -2.4 V ID -2.5 V ID (A) (A) - 4 -16 -2.2 V - 10 (1) (2) (3) -2 V -8 - 10- 5 -1.8 V 0 - 10- 6 0 -1 -2 -3 -4 0.0 - 0.5 - 1.0 - 1.5 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V Fig. 6. Output characteristics: drain current as a (1) minimum values function of drain-source voltage; typical values (2) typical values (3) maximum values Fig. 7. Sub-threshold drain current as a function of gate-source voltage PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 6 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET 017aaa764 017aaa765 120 120 -1.8 V -2 V -2.2 V -2.4 V RDSon RDSon (mΩ) (mΩ) -2.5 V 80 80 T = 150 °C 40 -3 V 40 j -4.5 V VGS = -8 V Tj = 25 °C 0 0 0 -8 -16 -24 0 -2 -4 -6 ID (A) VGS (V) Tj = 25 °C ID = -3 A Fig.
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