Important Notice Dear Customer, on 7 February 2017 The

Important notice

Dear Customer,

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PMN27XPE 20 V, single P-channel Trench MOSFET 20 September 2012 Product data sheet

1. Product profile

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits • Fast switching • Trench MOSFET technology • 2 kV ESD protection

1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits

1.4 Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tamb = 25 °C - - -20 V

VGS gate-source voltage -12 - 12 V

ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -5.7 A Static characteristics

RDSon drain-source on-state VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

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2. Pinning information

Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 D drain 6 5 4 D 2 D drain

3 G gate 1 2 3 G 4 S source TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa259

3. Ordering information

Table 3. Ordering information Type number Package Name Description Version PMN27XPE TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457

4. Marking

Table 4. Marking codes Type number Marking code PMN27XPE WC

5. Limiting values

Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tamb = 25 °C - -20 V

VGS gate-source voltage -12 12 V

ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -5.7 A

VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A

VGS = -4.5 V; Tamb = 100 °C [1] - -3.5 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -22 A

Ptot total power dissipation Tamb = 25 °C [2] - 530 mW [1] - 1250 mW

Tsp = 25 °C - 8330 mW

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Symbol Parameter Conditions Min Max Unit

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C Source-drain diode

IS source current Tamb = 25 °C [1] - -1.3 A ESD maximum rating

VESD electrostatic discharge voltage HBM [3] - 2000 V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Measured between all pins.

017aaa123 017aaa124 120 120

Pder Ider (%) (%)

80 80

40 40

0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)

Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature

PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 3 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

017aaa760 -102 Limit R = V /I ID DSon DS D (A)

-10

tp = 1 ms

-1 tp = 10 ms

DC; Tsp = 25 °C tp = 100 ms DC; T = 25 °C; -1 amb -10 drain mounting pad 6 cm2

-10-2 0 -1 -10 -102 VDS (V)

IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage

6. Thermal characteristics

Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance in free air [1] - 206 237 K/W from junction to [2] - 86 100 K/W ambient [3] - 52 60 K/W

Rth(j-sp) thermal resistance - 13 15 K/W from junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s

PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 4 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

017aaa761 103

Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1

0.05 10 0.02

0.01 0

1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa762 103

Zth(j-a) (K/W)

duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05

0.02 0 0.01

1 10-3 10-2 10-1 1 10 102 103 tp (s)

FR4 PCB, mounting pad for drain 6 cm2 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V breakdown voltage

VGSth gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V voltage

IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA

IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA

PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 5 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

Symbol Parameter Conditions Min Typ Max Unit

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA

RDSon drain-source on-state VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ resistance VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 56 64 mΩ

VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 39 44 mΩ

gfs forward VDS = -10 V; ID = -3 A; Tj = 25 °C - 16 - S transconductance Dynamic characteristics

QG(tot) total gate charge VDS = -10 V; ID = -3 A; VGS = -4.5 V; - 15 22.5 nC

Tj = 25 °C QGS gate-source charge - 3 - nC

QGD gate-drain charge - 3 - nC

Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 1770 - pF

Tj = 25 °C Coss output capacitance - 254 - pF

Crss reverse transfer - 180 - pF capacitance

td(on) turn-on delay time VDS = -10 V; ID = -3 A; VGS = -4.5 V; - 15 - ns

RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 22 - ns

td(off) turn-off delay time - 37 - ns

tf fall time - 29 - ns Source-drain diode

VSD source-drain voltage IS = -1.3 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V

017aaa763 017aaa129 -24 - 10- 3 -8 V -4.5 V -3 V

VGS = -2.4 V ID -2.5 V ID (A) (A)

- 4 -16 -2.2 V - 10

(1) (2) (3)

-2 V

-8 - 10- 5 -1.8 V

0 - 10- 6 0 -1 -2 -3 -4 0.0 - 0.5 - 1.0 - 1.5 VDS (V) VGS (V)

Tj = 25 °C Tj = 25 °C; VDS = -3 V Fig. 6. Output characteristics: drain current as a (1) minimum values function of drain-source voltage; typical values (2) typical values (3) maximum values Fig. 7. Sub-threshold drain current as a function of gate-source voltage PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 6 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

017aaa764 017aaa765 120 120 -1.8 V -2 V -2.2 V -2.4 V

RDSon RDSon (mΩ) (mΩ) -2.5 V 80 80

T = 150 °C 40 -3 V 40 j -4.5 V

VGS = -8 V Tj = 25 °C

0 0 0 -8 -16 -24 0 -2 -4 -6 ID (A) VGS (V)

Tj = 25 °C ID = -3 A Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values

017aaa766 017aaa767 -24 1.50

a ID (A) 1.25 -16

1.00

-8 0.75

Tj = 150 °C Tj = 25 °C

0 0.50 0 -1 -2 -3 -60 0 60 120 180 VGS (V) Tj (°C)

VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical function of gate-source voltage; typical values values

PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 7 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

017aaa768 017aaa769 -1.5 104

VGS(th) C (V) (pF) max Ciss -1.0 103 typ

min Coss Crss -0.5 102

0 10 -60 0 60 120 180 0 -1 -10 -102 Tj (°C) VDS (V)

ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values

017aaa770 -5 VDS VGS (V) -4 ID

VGS(pl) -3

VGS(th)

-2 VGS

QGS1 QGS2 Q Q -1 GS GD QG(tot)

017aaa137 0 0 3 6 9 12 15 Fig. 15. Gate charge waveform definitions QG (nC)

ID = -3 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values

PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 8 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

017aaa771 -5

IS (A) -4

-3

-2

-1 Tj = 150 °C Tj = 25 °C

0 0 -0.4 -0.8 -1.2 VSD (V)

VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values

8. Test information

t1 P duty cycle δ = t t2 2

t 006aaa812

Fig. 17. Duty cycle definition

9. Package outline

3.1 1.1 2.7 0.9

6 5 4 0.6 0.2

3.0 1.7 2.5 1.3 pin 1 index

1 2 3 0.40 0.26 0.95 0.25 0.10 1.9 Dimensions in mm 04-11-08

Fig. 18. Package outline TSOP6 (SOT457)

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10. Soldering

3.45

1.95

0.45 0.55 solder lands 0.95 (6×) (6×) 3.3 2.825 solder resist

0.95 solder paste

occupied area

0.7 Dimensions in mm (6×) 0.8 (6×)

2.4 sot457_fr

Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)

5.3

1.5 (4×) solder lands 1.475 solder resist 0.45 5.05 (2×) occupied area 1.475 Dimensions in mm

preferred transport direction during soldering

1.45 (6×)

2.85 sot457_fw

Fig. 20. Wave soldering footprint for TSOP6 (SOT457)

11. Revision history

Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN27XPE v.1 20120920 Product data sheet - -

PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 20 September 2012 10 / 13 NXP Semiconductors PMN27XPE 20 V, single P-channel Trench MOSFET

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13. Contents

1 Product profile ...... 1 1.1 General description ...... 1 1.2 Features and benefits ...... 1 1.3 Applications ...... 1 1.4 Quick reference data ...... 1 2 Pinning information ...... 2 3 Ordering information ...... 2 4 Marking ...... 2 5 Limiting values ...... 2 6 Thermal characteristics ...... 4 7 Characteristics ...... 5 8 Test information ...... 9 9 Package outline ...... 9 10 Soldering ...... 10 11 Revision history ...... 10 12 Legal information ...... 11 12.1 Data sheet status ...... 11 12.2 Definitions ...... 11 12.3 Disclaimers ...... 11 12.4 Trademarks ...... 12