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PMDPB42UN 20 V, Dual N-Channel Trench MOSFET

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PMDPB42UN 20 V, Dual N-Channel Trench MOSFET Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMDPB42UN DFN2020-6 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD Trench MOSFET technology plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven DC-to-DC converters portables Small brushless DC motor drive Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj =25°C --20V VGS gate-source voltage -8 - 8 V [1] ID drain current VGS =4.5V; Tamb =25°C; t ≤ 5 s --5.1A Static characteristics (per transistor) RDSon drain-source on-state VGS =4.5V; ID = 3.9 A; Tj = 25 °C - 40 50 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1source TR1 6 54 D1 D2 2 G1 gate TR1 3D2drain TR2 4S2source TR2 78 5 G2 gate TR2 6D1drain TR1 123 G1 S1 S2 G2 7D1drain TR1 Transparent top view 017aaa254 8D2drain TR2 SOT1118 (DFN2020-6) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB42UN DFN2020-6 plastic thermal enhanced ultra thin small outline package; no SOT1118 leads; 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB42UN 1L PMDPB42UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 16 May 2012 2 of 15 NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VDS drain-source voltage Tj =25°C - 20 V VGS gate-source voltage -8 8 V [1] ID drain current VGS =4.5V; Tamb =25°C; t ≤ 5 s -5.1A [1] VGS =4.5V; Tamb =25°C -3.9A [1] VGS =4.5V; Tamb =100°C -2.5A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 15.6 A [2] Ptot total power dissipation Tamb =25°C - 510 mW [1] -1165mW Tsp = 25 °C - 8330 mW Source-drain diode [1] IS source current Tamb =25°C -1.2A Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 017aaa124 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 −75 −25 25 75 125 175 −75 −25 25 75 125 175 Tj (°C) Tj (°C) Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of junction temperature function of junction temperature PMDPB42UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 16 May 2012 3 of 15 NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET aaa-002103 102 I D limit R = V / I (A) DSon DS D 10 (1) 1 (2) (4) (3) (5) 10-1 (6) 10-2 10-1 1 10 102 VDS (V) IDM is single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms 2 (6) DC; Tamb = 25 °C; drain mounting pad 6 cm Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor [1] Rth(j-a) thermal resistance in free air - 213 245 K/W from junction to [2] - 93 107 K/W ambient in free air; t ≤ 5 s [2] - 5564K/W Rth(j-sp) thermal resistance - 1215K/W from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB42UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 16 May 2012 4 of 15 NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET aaa-002049 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-002050 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDPB42UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 16 May 2012 5 of 15 NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source ID =250µA; VGS =0V; Tj =25°C 20--V breakdown voltage VGSth gate-source threshold ID =250µA; VDS =VGS; Tj =25°C 0.4 0.7 1 V voltage IDSS drain leakage current VDS =20V; VGS =0V; Tj =25°C --1µA VDS =20V; VGS =0V; Tj =150°C--20µA IGSS gate leakage current VGS =8V; VDS =0V; Tj = 25 °C - - 100 nA VGS =-8V; VDS =0V; Tj = 25 °C - - 100 nA RDSon drain-source on-state VGS =4.5V; ID = 3.9 A; Tj = 25 °C - 40 50 mΩ resistance VGS =4.5V; ID = 3.9 A; Tj =150°C - 6176mΩ VGS =2.5V; ID = 3.2 A; Tj = 25 °C - 53 70 mΩ VGS =1.8V; ID = 0.8 A; Tj = 25 °C - 82 123 mΩ gfs forward VDS =10V; ID = 3.9 A; Tj =25°C - 11 - S transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge VDS =10V; ID = 3.9 A; VGS =4.5V; -23.5nC Tj =25°C QGS gate-source charge - 0.4 - nC QGD gate-drain charge - 0.6 - nC Ciss input capacitance VDS =10V; f=1MHz; VGS =0V; - 185 - pF Tj =25°C Coss output capacitance - 55 - pF Crss reverse transfer -25-pF capacitance td(on) turn-on delay time VDS =10V; ID = 3.9 A; VGS =4.5V; -6-ns RG(ext) =6Ω; Tj =25°C tr rise time - 30 - ns td(off) turn-off delay time - 20 - ns tf fall time - 15 - ns Source-drain diode (per transistor) VSD source-drain voltage IS = 1.2 A; VGS =0V; Tj =25°C - 0.8 1.2 V PMDPB42UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 16 May 2012 6 of 15 NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET aaa-002104 aaa-002105 15 10-3 (1) (2) (3) ID ID (A) (A) (4) (1) (2) (3) 10 10-4 (5) (6) 5 10-5 (7) (8) 0 10-6 051 234 00.4 0.8 1.2 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 15 V (1) VGS = 4.5 V (1) minimum values (2) VGS = 3.0 V (2) typical values (3) VGS = 2.4 V (3) maximum values (4) VGS = 2.2 V (5) VGS = 2.0 V (6) VGS = 1.8 V (7) VGS = 1.6 V (8) VGS = 1.4 V Fig 6.
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