Important Notice Dear Customer, on 7 February 2017 The

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com

Instead of [email protected] or [email protected], use [email protected] (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved.

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding,

Kind regards,

Team Nexperia

PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 16 January 2017 Product data sheet

1. General description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH

2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Small SMD plastic package • AEC-Q101 qualified

3. Applications • Power management • LCD backlighting • LED driver for LED chain module • Switch Mode Power Supply (SMPS)

4. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter open base - - -150 V voltage

IC collector current - - -1 A

ICM peak collector current single pulse; tp ≤ 1 ms - - -2 A

hFE DC current gain VCE = -10 V; IC = -50 mA; Tamb = 25 °C 70 - 300 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

5. Pinning information

Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 B base 3 C 2 E emitter B 3 C collector E sym132 1 2 TO-236AB (SOT23)

6. Ordering information

Table 3. Ordering information Type number Package Name Description Version PBHV9115TLH TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes Type number Marking code[1] PBHV9115TLH FC%

[1] % = placeholder for manufacturing site code

Product data sheet 16 January 2017 2 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

8. Limiting values

Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -200 V

VCEO collector-emitter voltage open base - -150 V

VCESM collector-emitter peak VBE = 0 V - -200 V voltage

VEBO emitter-base voltage open collector - -6 V

IC collector current - -1 A

ICM peak collector current single pulse; tp ≤ 1 ms - -2 A

IBM peak base current - -400 mA [1] Ptot total power dissipation Tamb ≤ 25 °C - 300 mW

Tj junction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

006aab150 400

Ptot (mW)

300

200

100

0 - 75 - 25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 1. Power derating curve

Product data sheet 16 January 2017 3 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

9. Thermal characteristics

Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] Rth(j-a) thermal resistance in free air - - 417 K/W from junction to ambient

Rth(j-sp) thermal resistance - - 70 K/W from junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

006aab151 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05

10 0.02 0.01

0 1

10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Product data sheet 16 January 2017 4 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

10. Characteristics

Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off VCB = -120 V; IE = 0 A; Tamb = 25 °C - - -100 nA current VCB = -120 V; IE = 0 A; Tj = 150 °C - - -10 µA

ICES collector-emitter cut-off VCE = -120 V; VBE = 0 V; Tamb = 25 °C - - -100 nA current

IEBO emitter-base cut-off VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA current

hFE DC current gain VCE = -10 V; IC = -50 mA; Tamb = 25 °C 70 - 300

VCE = -10 V; IC = -100 mA; 60 - 300 Tamb = 25 °C

VCE = -10 V; IC = -500 mA; pulsed; tp ≤ 50 - 300 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

VCE = -10 V; IC = -1 A; pulsed; tp ≤ 10 - - 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

VCEsat collector-emitter IC = -100 mA; IB = -10 mA; - - -120 mV saturation voltage Tamb = 25 °C

IC = -100 mA; IB = -20 mA; - - -100 mV Tamb = 25 °C

IC = -500 mA; IB = -100 mA; pulsed; tp ≤ - - -300 mV 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

VBEsat base-emitter saturation IC = -1 A; IB = -200 mA; pulsed; tp ≤ - - -1.2 V voltage 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

td delay time VCC = -6 V; IC = -0.5 A; IBon = -0.1 mA; - 10 - ns IBoff = 0.1 mA; Tamb = 25 °C tr rise time - 285 - ns

ton turn-on time - 295 - ns

ts storage time - 430 - ns

tf fall time - 300 - ns

toff turn-off time - 730 - ns

fT transition frequency VCE = -10 V; IC = -10 mA; f = 100 MHz; - 55 - MHz Tamb = 25 °C

Cc collector capacitance VCB = -20 V; IE = 0 A; ie = 0 A; - 10 - pF f = 1 MHz; Tamb = 25 °C

Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; - 150 - pF f = 1 MHz; Tamb = 25 °C

Product data sheet 16 January 2017 5 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

aaa-026066 aaa-026067 300 -2.0 -400 -360 I -320 C -280 (A) hFE -240 -1.6 -200 (1) -160 200 -120 -1.2 -80 (2)

-0.8 IB (mA) = -40 100 (3)

-0.4

0 0 -10-1 -1 -10 -102 -103 -104 0 -1 -2 -3 -4 -5 IC (mA) VCE (V)

VCE = -10 V Tamb = 25 °C (1) T = 100 °C amb Fig. 4. Collector current as a function of collector- (2) T = 25 °C amb emitter voltage; typical values (3) Tamb = −55 °C Fig. 3. DC current gain as a function of collector current; typical values

aaa-026068 aaa-026069 -1.2 -1.2

VBE (V) VBEsat (V) -0.9 (1) (1) -0.8 (2) (2)

-0.6 (3) (3)

-0.4 -0.3

0 0 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA)

VCE = -10 V IC/IB = 5 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of current; typical values collector current; typical values

Product data sheet 16 January 2017 6 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

aaa-026070 aaa-026071 -10 -10

VCEsat VCEsat (V) (V)

-1 -1

(1) (1)

(2) (2) -10-1 -10-1 (3)

-10-2 -10-2 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA)

IC/IB = 5 Tamb = 25 °C (1) Tamb =100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) T = -55 °C amb Fig. 8. Collector-emitter saturation voltage as a Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values

aaa-026072 aaa-026073 103 104 R R CEsat CEsat (Ω) (Ω) 103 102

102 (1) 10 (2) 10 (3)

1 (1) (2) 1

10-1 10-1 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA)

IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) T = −55 °C amb Fig. 10. Collector-emitter saturation resistance as a Fig. 9. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values

Product data sheet 16 January 2017 7 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

11. Test information

- IB

90 % input pulse (idealized waveform)

- IBon (100 %)

10 %

- IBoff

output pulse - IC (idealized waveform)

90 %

- IC (100 %)

10 % t

td tr ts tf

ton toff 006aaa266

Fig. 11. BISS transistor switching time definition

VBB VCC

RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT

mgd624

Fig. 12. Test circuit for switching times

Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

Product data sheet 16 January 2017 8 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

12. Package outline

3.0 1.1 2.8 0.9

0.45 0.15 2.5 1.4 2.1 1.2

1 2 0.48 0.15 0.38 0.09 1.9

Dimensions in mm 04-11-04

Fig. 13. Package outline TO-236AB (SOT23)

13. Soldering

3.3

2.9

1.9

solder lands

solder resist 3 1.7 2

solder paste

0.7 0.6 occupied area (3×) (3×) Dimensions in mm

0.5 (3×) 0.6 (3×)

1 sot023_fr

Fig. 14. Reflow soldering footprint for TO-236AB (SOT23)

Product data sheet 16 January 2017 9 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

2.2 1.2 (2×)

1.4 (2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm 1.4

preferred transport direction during soldering

2.8

4.5 sot023_fw

Fig. 15. Wave soldering footprint for TO-236AB (SOT23)

Product data sheet 16 January 2017 10 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

14. Revision history

Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV9115TLH v.1 20170116 Product data sheet - -

Product data sheet 16 January 2017 11 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance 15. Legal information with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to Data sheet status make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior Document Product Definition to the publication hereof. status [1] [2] status [3] Suitability for use in automotive applications — This NXP Objective Development This document contains data from Semiconductors product has been qualified for use in automotive [short] data the objective specification for product applications. Unless otherwise agreed in writing, the product is not designed, sheet development. authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Preliminary Qualification This document contains data from the malfunction of an NXP Semiconductors product can reasonably be expected [short] data preliminary specification. to result in personal injury, death or severe property or environmental sheet damage. NXP Semiconductors and its suppliers accept no liability for Product Production This document contains the product inclusion and/or use of NXP Semiconductors products in such equipment or [short] data specification. applications and therefore such inclusion and/or use is at the customer's own sheet risk. Quick reference data — The Quick reference data is an extract of the [1] Please consult the most recently issued document before initiating or product data given in the Limiting values and Characteristics sections of this completing a design. document, and as such is not complete, exhaustive or legally binding. [2] The term 'short data sheet' is explained in section "Definitions". Applications — Applications that are described herein for any of these [3] The product status of device(s) described in this document may have products are for illustrative purposes only. NXP Semiconductors makes changed since this document was published and may differ in case of no representation or warranty that such applications will be suitable for the multiple devices. The latest product status information is available on specified use without further testing or modification. the Internet at URL http://www.nxp.com. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Definitions Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine Preview — The document is a preview version only. The document is still whether the NXP Semiconductors product is suitable and fit for the subject to formal approval, which may result in modifications or additions. customer’s applications and products planned, as well as for the planned NXP Semiconductors does not give any representations or warranties as to application and use of customer’s third party customer(s). Customers should the accuracy or completeness of information included herein and shall have provide appropriate design and operating safeguards to minimize the risks no liability for the consequences of use of such information. associated with their applications and products. Draft — The document is a draft version only. The content is still under NXP Semiconductors does not accept any liability related to any default, internal review and subject to formal approval, which may result in damage, costs or problem which is based on any weakness or default modifications or additions. NXP Semiconductors does not give any in the customer’s applications or products, or the application or use by representations or warranties as to the accuracy or completeness of customer’s third party customer(s). Customer is responsible for doing all information included herein and shall have no liability for the consequences necessary testing for the customer’s applications and products using NXP of use of such information. Semiconductors products in order to avoid a default of the applications Short data sheet — A short data sheet is an extract from a full data sheet and the products or of the application or use by customer’s third party with the same product type number(s) and title. A short data sheet is customer(s). NXP does not accept any liability in this respect. intended for quick reference only and should not be relied upon to contain Limiting values — Stress above one or more limiting values (as defined in detailed and full information. For detailed and full information see the the Absolute Maximum Ratings System of IEC 60134) will cause permanent relevant full data sheet, which is available on request via the local NXP damage to the device. Limiting values are stress ratings only and (proper) Semiconductors sales office. In case of any inconsistency or conflict with the operation of the device at these or any other conditions above those short data sheet, the full data sheet shall prevail. given in the Recommended operating conditions section (if present) or the Product specification — The information and data provided in a Product Characteristics sections of this document is not warranted. Constant or data sheet shall define the specification of the product as agreed between repeated exposure to limiting values will permanently and irreversibly affect NXP Semiconductors and its customer, unless NXP Semiconductors and the quality and reliability of the device. customer have explicitly agreed otherwise in writing. In no event however, Terms and conditions of commercial sale — NXP Semiconductors shall an agreement be valid in which the NXP Semiconductors product products are sold subject to the general terms and conditions of commercial is deemed to offer functions and qualities beyond those described in the sale, as published at http://www.nxp.com/profile/terms, unless otherwise Product data sheet. agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to Disclaimers applying the customer’s general terms and conditions with regard to the Limited warranty and liability — Information in this document is believed purchase of NXP Semiconductors products by customer. to be accurate and reliable. However, NXP Semiconductors does not give No offer to sell or license — Nothing in this document may be interpreted any representations or warranties, expressed or implied, as to the accuracy or construed as an offer to sell products that is open for acceptance or the or completeness of such information and shall have no liability for the grant, conveyance or implication of any license under any copyrights, patents consequences of use of such information. NXP Semiconductors takes no or other industrial or intellectual property rights. responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior In no event shall NXP Semiconductors be liable for any indirect, incidental, authorization from competent authorities. punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal Translations — A non-English (translated) version of a document is for or replacement of any products or rework charges) whether or not such reference only. The English version shall prevail in case of any discrepancy damages are based on tort (including negligence), warranty, breach of between the translated and English versions. contract or any other legal theory.

Product data sheet 16 January 2017 12 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.

Product data sheet 16 January 2017 13 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor

16. Contents

1. General description...... 1 2. Features and benefits...... 1 3. Applications...... 1 4. Quick reference data...... 1 5. Pinning information...... 2 6. Ordering information...... 2 7. Marking...... 2 8. Limiting values...... 3 9. Thermal characteristics...... 4 10. Characteristics...... 5 11. Test information...... 8 12. Package outline...... 9 13. Soldering...... 9 14. Revision history...... 11 15. Legal information...... 12

© NXP Semiconductors N.V. 2017. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 January 2017

Product data sheet 16 January 2017 14 / 14