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Important Notice Dear Customer, on 7 February 2017 The Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 16 January 2017 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Small SMD plastic package • AEC-Q101 qualified 3. Applications • Power management • LCD backlighting • LED driver for LED chain module • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter open base - - -150 V voltage IC collector current - - -1 A ICM peak collector current single pulse; tp ≤ 1 ms - - -2 A hFE DC current gain VCE = -10 V; IC = -50 mA; Tamb = 25 °C 70 - 300 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter B 3 C collector E sym132 1 2 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV9115TLH TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PBHV9115TLH FC% [1] % = placeholder for manufacturing site code PBHV9115TLH All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved Product data sheet 16 January 2017 2 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -200 V VCEO collector-emitter voltage open base - -150 V VCESM collector-emitter peak VBE = 0 V - -200 V voltage VEBO emitter-base voltage open collector - -6 V IC collector current - -1 A ICM peak collector current single pulse; tp ≤ 1 ms - -2 A IBM peak base current - -400 mA [1] Ptot total power dissipation Tamb ≤ 25 °C - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab150 400 Ptot (mW) 300 200 100 0 - 75 - 25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 1. Power derating curve PBHV9115TLH All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved Product data sheet 16 January 2017 3 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] Rth(j-a) thermal resistance in free air - - 417 K/W from junction to ambient Rth(j-sp) thermal resistance - - 70 K/W from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab151 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV9115TLH All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved Product data sheet 16 January 2017 4 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off VCB = -120 V; IE = 0 A; Tamb = 25 °C - - -100 nA current VCB = -120 V; IE = 0 A; Tj = 150 °C - - -10 µA ICES collector-emitter cut-off VCE = -120 V; VBE = 0 V; Tamb = 25 °C - - -100 nA current IEBO emitter-base cut-off VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA current hFE DC current gain VCE = -10 V; IC = -50 mA; Tamb = 25 °C 70 - 300 VCE = -10 V; IC = -100 mA; 60 - 300 Tamb = 25 °C VCE = -10 V; IC = -500 mA; pulsed; tp ≤ 50 - 300 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -10 V; IC = -1 A; pulsed; tp ≤ 10 - - 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter IC = -100 mA; IB = -10 mA; - - -120 mV saturation voltage Tamb = 25 °C IC = -100 mA; IB = -20 mA; - - -100 mV Tamb = 25 °C IC = -500 mA; IB = -100 mA; pulsed; tp ≤ - - -300 mV 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEsat base-emitter saturation IC = -1 A; IB = -200 mA; pulsed; tp ≤ - - -1.2 V voltage 300 µs; δ ≤ 0.02 ; Tamb = 25 °C td delay time VCC = -6 V; IC = -0.5 A; IBon = -0.1 mA; - 10 - ns IBoff = 0.1 mA; Tamb = 25 °C tr rise time - 285 - ns ton turn-on time - 295 - ns ts storage time - 430 - ns tf fall time - 300 - ns toff turn-off time - 730 - ns fT transition frequency VCE = -10 V; IC = -10 mA; f = 100 MHz; - 55 - MHz Tamb = 25 °C Cc collector capacitance VCB = -20 V; IE = 0 A; ie = 0 A; - 10 - pF f = 1 MHz; Tamb = 25 °C Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; - 150 - pF f = 1 MHz; Tamb = 25 °C PBHV9115TLH All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved Product data sheet 16 January 2017 5 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor aaa-026066 aaa-026067 300 -2.0 -400 -360 I -320 C -280 (A) hFE -240 -1.6 -200 (1) -160 200 -120 -1.2 -80 (2) -0.8 IB (mA) = -40 100 (3) -0.4 0 0 -10-1 -1 -10 -102 -103 -104 0 -1 -2 -3 -4 -5 IC (mA) VCE (V) VCE = -10 V Tamb = 25 °C (1) T = 100 °C amb Fig. 4. Collector current as a function of collector- (2) T = 25 °C amb emitter voltage; typical values (3) Tamb = −55 °C Fig. 3. DC current gain as a function of collector current; typical values aaa-026068 aaa-026069 -1.2 -1.2 VBE (V) VBEsat (V) -0.9 (1) (1) -0.8 (2) (2) -0.6 (3) (3) -0.4 -0.3 0 0 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) VCE = -10 V IC/IB = 5 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of current; typical values collector current; typical values PBHV9115TLH All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved Product data sheet 16 January 2017 6 / 14 NXP Semiconductors PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor aaa-026070 aaa-026071 -10 -10 VCEsat VCEsat (V) (V) -1 -1 (1) (1) (2) (2) -10-1 -10-1 (3) -10-2 -10-2 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) IC/IB = 5 Tamb = 25 °C (1) Tamb =100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) T = -55 °C amb Fig. 8. Collector-emitter saturation voltage as a Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values aaa-026072 aaa-026073 103 104 R R CEsat CEsat (Ω) (Ω) 103 102 102 (1) 10 (2) 10 (3) 1 (1) (2) 1 10-1 10-1 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) T = −55 °C amb Fig.
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