Facile Growth of Monolayer Mos2 Film Areas on Sio2
Eur. Phys. J. B (2013) 86: 226 DOI: 10.1140/epjb/e2013-31011-y THE EUROPEAN PHYSICAL JOURNAL B Regular Article Facile growth of monolayer MoS2 film areas on SiO2 John Mann1, Dezheng Sun1,2,QuanMa1,Jen-RuChen1, Edwin Preciado1,TaisukeOhta3, Bogdan Diaconescu3, Koichi Yamaguchi1, Tai Tran1, Michelle Wurch1, KatieMarie Magnone1,TonyF.Heinz2, Gary L. Kellogg3, Roland Kawakami1, and Ludwig Bartels1,a 1 Chemistry, Physics, and Materials Science and Engineering, University of California, CA 92521 Riverside, USA 2 Departments of Physics and Electrical Engineering, Columbia University, NY 10027 New York, USA 3 Sandia National Laboratories, 87185 Albuquerque, New Mexico, USA Received 6 November 2012 / Received in final form 11 February 2013 Published online 20 May 2013 – c EDP Sciences, Societ`a Italiana di Fisica, Springer-Verlag 2013 Abstract. Areas of single-layer MoS2 film can be prepared in a tube furnace without the need for tempera- ture control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport mea- surements show n-doped material with a mobility of 0.26 cm2 V−1 s−1. Molybdenum disulfide, MoS2, has attracted widespread microns across can be achieved with minimal control of attention as a material that can be prepared in a stable the growth conditions. form down to the single-layer limit. As a monolayer, the Our films are found to be uniform in their spectro- material becomes a direct-gap semiconductor with a gap scopic properties and feature large areas that are of mono- of 1.8 eV [1,2].
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