Status of JEDEC JC-70

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JEDEC JC-70 Datasheet, Qualification, and Test Standards for Wide Bandgap: Progress and Impact Stephanie Watts Butler, Texas Instruments, JEDEC JC-70 Chair Peter Friedrichs, Infineon, JC-70.2 Vice Chair

With contributions from: Jeffrey Casady, Wolfspeed, JEDEC JC-70.2 Chair Tim McDonald, JEDEC JC-70.1 Chair, JC-70 Vice Chair Kurt Smith, VisIC, JEDEC JC-70.1 Vice Chair

APEC 2020, NOLA Session IS-23/Paper 3546 1 of 29 WBG MarketS: >$0.5B, Growing to >$2B by 2024

SiC power projected GaN power projected ~$1.9B by 2024 ~ $350M by 2024, with CAGR of 29%* with CAGR of 85%**

* 2018-24 CAGR: https://www.i-micronews.com/products/power-sic-2019-materials-devices-and-applications/ **2018-24 CAGR: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/ Figure Courtesy of Texas Instruments APEC 2020, NOLA 2 of 29 Outline • JC-70 History & Structure • GaN Results & Status • SiC Results & Status • Future Directions, including Automotive • Collaborations and Other Standards Bodies • How to Become Involved with JEDEC

APEC 2020, NOLA 3 of 29

JEDEC JC-70 Journey • APEC 2016: Gauge Interest Meeting held which resulted in launching GaNSPEC DWG (JEDEC participated) – See “Standardization for Wide Bandgap Devices: GaNSPEC DWG,” Stephanie Watts Butler, APEC 2017 • At WiPDA 2016: With assistance from GaNSPEC, SiCSPEC DWG launched – See “Status of Wide Bandgap Device Qualification Standards Effort by New JEDEC Committee JC70,” Stephanie Watts Butler and Tim McDonald, APEC 2018 • At WiPDA 2017: First JEDEC JC-70 Meeting Held – See “Status of Wide Bandgap Device Qualification Standards Effort by New JEDEC Committee JC70,” Stephanie Watts Butler and Tim McDonald, APEC 2018 • At WiPDA 2018: First Document Approved by Committee to send to JEDEC BOD for approval – January 2019: JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices https://www.jedec.org/standards-documents/docs/jep173 • At APEC 2019: First Presentation of Results – See “Update on GaN and SiC Activities Within JEDEC JC-70 Committee,” Jeffrey Casady, Stephanie Watts Butler, Tim McDonald, Peter Friedrichs, Kurt Smith, APEC 2019 – GaN Subcommittee announced the inclusion of transient voltage guidelines in recognition of the valuable role these effects have on power device operation – First Public Update of Silicon Carbide (JC-70.2) status • Progress since APEC 2019: Focus of today’s talk

APEC 2020, NOLA 4 of 29

Purpose of Standards • Enabling Market Growth • Ramp Maturity of the Industry • Accelerate industry-wide adoption by creating consistency across the supplier base • Consistency that is important to the user • Addressing Specific Market Needs

APEC 2020, NOLA 5 of 29 JC-70 created October 2017 (Committee for Wide Bandgap Power Electronic Conversion Semiconductors)

• Products – discrete devices and integrated circuits; wide bandgap and ultra wide bandgap – power conversion circuits regardless of device type, polarity, mode of operation, packaging, electrical ratings, and end applications. • RF/microwave amplification and signal conditioning applications generally not covered • Industry standards concerned with – reliability verification and qualification procedures, – test methods and measurement techniques, – data sheet elements and device specifications, – unique packaging considerations – cataloging and consideration of mission profiles – formulation of terms, definitions, and symbols APEC 2020, NOLA 6 of 29 JC-70 Membership Stats • JEDEC’s 3rd Largest Committee and the Fastest Growing • Began with 23 member companies, now over 60 Companies – US, Europe, Middle East, and Asia – Global multinational corporations & technology startups – Power GaN and SiC semiconductor manufacturers, users of wide bandgap power devices, test and measurement equipment suppliers. • 2 subcommittees: – JC-70.1 covers GaN – JC-70.2 covers SiC • Each subcommittee has task groups – Comprised of industry experts – Technical experts from universities and national labs also contribute APEC 2020, NOLA 7 of 29 JC-70 Members List (March 2020)

• ABB • Hewlett Packard Enterprise Co • Rohm Semiconductor • Accel RF Instruments Corporation • HP Inc. • Samsung Semiconductor • Alibaba (China) Co., Ltd. • Infineon • Silicon Works • Alpha and Omega Semiconductor, • Innoscience Technology Co., Ltd • STAr-Edge Technologies, Inc. Inc. • Intel Corporation • STMicroelectronics • Alter Technology France • John Deere Electronic Solutions • Sumitomo Electric Industries • Analog Devices Inc. • Keysight Technologies Inc. • SZ DJI Technology Co., Ltd. • CEA Tech • Lenovo • Taiwan Semiconductor Mfg. Company • ChangXin Memory Technologies Inc. • M/A-COM Technology Solutions • Tektronix • CSA Catapult • Mentor, a Siemens Company • Texas Instruments Inc. • Cyntec Co., Ltd • Microchip Technology Inc. • The Boeing Company • Dell Inc. • Navitas Semiconductor • Transphorm • Efficient Power Conversion Corp • Nexgen Power Systems • U.S. Army AMRDEC • Evans Analytical Group (EAG) • Nexperia Germany GmbH • Vishay Corporation • ExaGan • Northrop Grumman Corporation • VisIC Technologies • Freebird Semiconductor Corporation • NSWC Crane • Wolfspeed, a Cree Company • GaN Systems • NXP Semiconductors • Xi'an Semipower Electronic Technology • GaN Ventures Semiconductor • ON Semiconductor • Xiamen Sanan Integrated Circuit Co • GaNPower International Inc. • Panasonic Corporation • Yangtze Memory Technologies Co., Ltd • GigaDevice Semiconductor (Beijing) • PN Junction Semiconductor Co., Ltd. • GLOBAL FOUNDRIES U.S. Inc. • Power Integrations • Group NIRE • Renesas • Rohde & Schwarz GmbH & Co KG

APEC 2020, NOLA 8 of 29 JC-70 Structure: Wide Bandgap (GaN & SiC)

JC-70 Wide Bandgap Power Electronic Conversion Semiconductors

JC-70.1 Subcommittee JC-70.2 Subcommittee GaN Power Electronic Conversion SiC Power Electronic Conversion Semiconductor Standards Semiconductor Standards

APEC 2020, NOLA 9 of 29 JC-70 Structure: Leadership Chair: JC-70 Wide Bandgap Dr. Stephanie Watts Butler (Texas Instruments) Power Electronic Vice-Chair Conversion Mr. Tim McDonald Semiconductors (Infineon)

JC-70.1 Subcommittee JC-70.2 Subcommittee GaN Power Electronic Conversion SiC Power Electronic Conversion Semiconductor Standards Semiconductor Standards

Chair: Chair: Mr. Tim McDonald (Infineon) Dr. Jeffrey Casady (Wolfspeed, a Cree Company)

Vice-Chair Vice-Chair Dr. Kurt Smith (VisIC) Dr. Peter Friedrichs (Infineon)

APEC 2020, NOLA 10 of 29 JEDEC Committee JC-70.1 (GaN) Task Group Structure

JC-70.1 Subcommittee GaN Power Electronic Conversion Semiconductor Standards Task Group TG701_1 Task Group TG701_3 GaN Power Electronic Conversion GaN Power Electronic Conversion Semiconductor Reliability and Semiconductor Test and Qualification Procedures Task Group TG701_2 Characterization Methods GaN Power Electronic Conversion Semiconductor Datasheet Elements and Parameters

APEC 2020, NOLA 11 of 29 JEDEC Committee JC-70.2 (SiC) Task Group Structure

JC-70.2 Subcommittee SiC Power Electronic Conversion Semiconductor Standards Task Group TG702_1 Task Group TG702_3 SiC Power Electronic Conversion SiC Power Electronic Conversion Semiconductor Reliability and Semiconductor Test and Qualification Procedures Task Group TG702_2 Characterization Methods SiC Power Electronic Conversion Semiconductor Datasheet Elements and Parameters

APEC 2020, NOLA 12 of 29 Results & Status for GaN JC-70.1

APEC 2020, NOLA 13 of 29 First Guideline Published January 16, 2019 • JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices – https://www.jedec.org/standards-documents/docs/jep173

• Address key need of user community:

– Method for measurement of Drain-to-Source Resistance in the ON-state (RDS(ON)) encompassing dynamic effects • Dynamic effects are characteristic of GaN power FETs

–The value of the resulting measured RDS(ON) is method dependent • Help accelerate industry-wide adoption of GaN by ensuring consistency across the supplier base

APEC 2020, NOLA 14 of 29 JEDEC Wide Bandgap Power Semiconductor Committee Publishes Guideline for Switching Reliability Evaluation Procedures for GaN Devices February 27, 2020

APEC 2020, NOLA 15 of 29 2nd Guideline Published February 2020 • JEP180: Guideline For Switching Reliability Evaluation Procedures For Gallium Nitride Power Conversion Devices –https://www.jedec.org/standards-documents/docs/JEP180 •Guidelines for both –Switching Accelerated Life –Dynamic High-Temperature Operating-Life •Procedures for capturing stresses

APEC 2020, NOLA 16 of 29 Switching Locus Curve

APEC 2020, NOLA 17 of 29 Proposed Items for GaN Presented at Guidelines/Standards APEC 2019 REL Test Datasheet • • IncludeInclude effecteffect ofof DynamicDynamic List of Failure Mechanisms • DynamicDynamic R DSRDS(ON)(ON) & Resulting Failure Mode • Thermal Resistance (only RRDSDS(ON)(ON) (summarizing Literature) • Switchingfor cascodes reliability) test • GaNNomenclature power transistors of • Offstate voltage/ • methodsSafe Operating Area (SOA) specificparameters voltage to adjust ratings for temperature Reliability uniqueness of GaN power • Switching Reliability • Transistortransistors circuit symbol to • Stress Procedures • reflectTransistor distinctive circuit symboloperation to & Acceleration GaNreflect HEMTs distinctive • List of Failure Mechanisms & operation GaN HEMTs

Resulting Failure Mode

• Transient Voltage Aspects

APEC 2020, NOLA 18 of 29 Proposed Items for GaN Status for Guidelines/Standards APEC 2020 REL Test Datasheet • • IncludeInclude effecteffect ofof DynamicDynamic JEP122-like catalog of • DynamicDynamic R DSRDS(ON)(ON) Failure Mechanisms/Mode • Thermal Resistance (only RRDSDS(ON)(ON) (summarizing Literature) • Switchingfor cascodes reliability) test • GaNNomenclature power transistors of • Offstate voltage/Temp Rel • methodsSafe Operating Area (SOA) specificparameters voltage to adjust ratings for (ALT-HTRB) uniqueness of GaN power  Switching Reliability • Transistortransistors circuit symbol to • Stress Procedures • reflectTransistor distinctive circuit symboloperation to & Acceleration GaNreflect HEMTs distinctive • Continue to Add to List of operation GaN HEMTs

Failure Mechanisms

• Transient Voltage Aspects

APEC 2020, NOLA 19 of 29 Results & Status for SiC JC-70.2

APEC 2020, NOLA 20 of 29 Proposed Items focus for SiC Presented at Guidelines/Standards APEC 2019

REL Test Datasheet • BTI • Vth measurement • TBD • ALT-HTRB • Qg Measurement GaN collaboration? • Short-circuit measurement • Body Diode • neutron radiation • TDDB • Corresponding Acceleration & Stress Procedure • dV/dt Perhaps most difficult to address • List of Failure Mechanisms & Resulting Failure Mode

APEC 2020, NOLA 21 of 29 Proposed Items focus for SiC Status Update Guidelines/Standards APEC 2020 Liaisons between Task Groups to be fine tuned

REL Test Datasheet • BTI  in advanced status • Vth  in advanced status • Vth definition • ALT-HTRB • Qg  first draft • Datasheet elements to separate GaN collab under assessment • Short-circuit measurement  t.b.d re-turn on effects from reverse • Body Diode recovery • neutron radiation • Vth hysteresis • TDDB • More to come Corresponding Acceleration & Stress Procedure • dV/dt Work has begun • List of Failure Mechanisms & Resulting Failure Mode

APEC 2020, NOLA 22 of 29 Silicon Carbide threshold voltage Presented initially at APEC 2019; updated to advanced document status at APEC 2020 by multiple task groups

Test methods influence results JC-70.2 Task Group (TG) evaluations

NBTI PBTI 1E+1 • Example SiC topic is threshold 1E+1

power law fit to 1E+0 1E+0 shift, or sometimes referred to as power law fit to PBTI shift

(V) NBTI shift 1E-1

1E-1 Bias Temperature Instability (BTI)

(V)

T D

V 1E-2

1E-2 – Shifts with voltage, temperature D

ABS ABS 1E-3 1E-3 and time

1E-4 1E-4 – It can affect reliability if shift is 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 log time (a.u.) log time (a.u.) too severe causing circuit failure

Figure 5.4. Graph showing the absolute Figure 5.5. Graph showing the absolute value – It can be reported differently in value of the NBTI V(th) shift (the shift is of the PBTI V(th) shift as a function of time, fit expected to be negative) as a function of to a power law. The early time portions of V(th) datasheets without common time, fit to a power law. shift do not always follow power law behavior. agreement on test procedures S. Sabri, et al, “SiC Power Device Reliability Studies,” 13th Annual SiC MOS Workshop, Aug. 2018, University of Maryland, USA. APEC 2020, NOLA 23 of 29 JC-70 Structure: interaction and relationships

Cooperates through JEDEC JC-70 Wide Bandgap Power Communicate and with other International Stds Electronic Conversion collaborate with JC-14 and Bodies JC-13 and other JEDEC Semiconductors committees

JC-70.1 Subcommittee JC-70.2 Subcommittee GaN Power Electronic Conversion SiC Power Electronic Conversion Semiconductor Standards Semiconductor Standards

APEC 2020, NOLA 24 of 29 Working with Other Organizations • JEDEC has history of working with IEC and JEITA • IEC: International Electrotechnical Commission – https://www.iec.ch/ – MOU to enable work based upon JEP173 (Dynamic RDSon) – Approved to proceed to new work package

APEC 2020, NOLA 25 of 29 Addressing Specific Market Needs • Wide Bandgap Ramp is occurring in Automotive • JEDEC recognizes need for automotive standards – Automotive Forums held 2015/17/18/19 – Hosted by JEITA in 2020 - delayed • JC-70 actively assessing unique needs of Auto • JC-70 in discussions with automotive related organizations

APEC 2020, NOLA 26 of 29 Acknowledgments • JEDEC Staff • Mikhail Guz, JEDEC Secretary to JC-70, Consultant, IP and Technology Experts • JC-70.1 Task Group Leaders TG701_1 (REL) Co-Chairs: TG701_2 (Datasheet) Co-Chairs TG701_3 (Test) Co-Chairs: • Sameh Khalil (Infineon) • Peter Di Maso (GaNSystems) • Deepak Veereddy (Infineon) • Mark Wasilewski (ON) • Nick Fichtenbaum (Navitas) • Jaume Roig (ON) • Sandeep Bahl (TI)

• JC-70.2 Task Group Leaders

TG702_1 (REL) Co-Chairs: TG702_2 (Datasheet) Co-Chairs TG702_3 (Test) Co-Chairs: • Don Gajewski (Wolfspeed) • Christian Mueller (Infineon) • Ryo Takeda (Keysight) • • • Thomas Aichinger (Infineon) Sauvik Chowdhury (ON Semi) Thomas Basler (Infineon)

• Entire Membership of JC-70, JC-70.1, and JC-70.2 and their Task Groups • The University and National Lab Community APEC 2020, NOLA 27 of 29 How to Join

• Interested companies worldwide are welcome to join JEDEC to participate in this important standardization effort. • Find more information about membership – https://www.jedec.org/join-jedec • or contact Emily Desjardins to learn more – [email protected]

APEC 2020, NOLA 28 of 29 Key Takeaways

• Document(s) status: both for GaN and SiC • SiC & GaN Topics can be same AND different • Exploring new markets, like Automotive • New engagements with other organizations • How to participate https://www.jedec.org/join-jedec

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