DOCSLIB.ORG

Emerging Non-Volatile Memory 2020 | Sample | | ©2020 2 ABOUT the AUTHORS Biographies & Contacts

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Emerging Non-Volatile Memory 2020 | Sample | | ©2020 2 ABOUT the AUTHORS Biographies & Contacts From Technologies to Markets Emerging Non- Volatile Memory 2020 Market and Technology Report 2020 SAMPLE © 2020 TABLE OF CONTENTS Scope, Objectives and Methodologies 13 Emerging NVM Market Forecast (2019-2025) 181 Three Slides Summary 23 MRAM Market Forecast – in units, $M, Gb and 12’’ eq. wafers 195 Executive Summary 27 PCM Market Forecast – in units, $M, Gb and 12’’ eq. wafers 202 Context - Overview of the Memory Business 56 RRAM Market Forecast – in units, $M, Gb and 12’’ eq. wafers 216 Stand-Alone Memory – NAND, DRAM, NOR, (NV)SRAM 61 MRAM Technology, Roadmaps and Players 223 Technology description, time to market, key players, key products, main trends Embedded Memory – eFlash, eDRAM, SRAM 78 PCM Technology, Roadmaps and Players 248 Memory Market Players 88 Technology description, time to market, key players, key products, main trends Overview Emerging Non-Volatile Memory 104 RRAM Technology, Roadmaps and Players 271 Emerging Non-Volatile Memory Applications 118 Technology description, time to market, key players, key products, main trends Fast/Reliable Memory for Industry, Defense, etc. (NVRAM) 125 Other Emerging NVM Technologies (NRAM, FeFETs) 294 Code/Data Storage (NOR-like) 130 China Memory Landscape 302 Persistent Memory (NVDIMM) 134 Summary and Conclusions 314 Low-Latency Storage (SCM Drive) 141 Noteworthy News 2018-2019 323 Embedded NVM for Analog ICs (EEPROM/eFlash-like) 146 Players’ announcements, technical demonstrations, and highlights from IEDM ‘19 Embedded NVM for MCU, SoC, ASIC, etc. (Slow-SRAM/eFlash-like) 150 Mergers & Acquisitions, Partnerships and Funding 336 Embedded Cache Memory for CPU/APU (SRAM/eDRAM-like) 164 How should you use our data? 345 Embedded NVM for AI (In-Memory Computing) 174 Yole’s Presentation 346 Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 2 ABOUT THE AUTHORS Biographies & contacts Simone Bertolazzi, PhD Simone is a Technology & Market analyst at Yole Développement (Yole) working within the Semiconductor & Software division. He is member of Yole’s memory team and contributes on a day-to-day basis to the analysis of memory markets and technologies, their related materials and fabrication processes. Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their device applications. He (co-) authored more than 15 papers in high-impact scientific journals (>3,000 citations) and was awarded the prestigious Marie Curie Intra-European Fellowship. Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland), where he developed novel flash memory cells based on heterostructures of 2D materials and high-κ dielectrics. Simone earned a double M.A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy), graduating cum laude. Contact: [email protected] Emilie Jolivet Emilie Jolivet is Director of the Semiconductor & Software Division at Yole Développement (Yole), part of Yole Group of Companies. Emilie manages the expansion of the technical and market expertise of her team. In addition, Emilie’s mission focusses on the management of business relationships with semiconductor leaders and the development of market research and strategy consulting activities. With previous collaborations at Freescale and EV Group, Emilie developed a core expertise dedicated to package & assembly, semiconductor manufacturing, memory and software & computing. Emilie Jolivet holds a Master’s degree in Applied Physics specializing in Microelectronics from INSA (Toulouse, France) and graduated with an MBA from IAE (Lyon, France). Contact: [email protected] Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 3 COMPANIES CITED IN THIS REPORT 4DS, Adesto, Aeroflex, Antaïos, Apple, Applied Materials, ARM, Avalanche, Buffalo, Canon Anelva, CEA Leti, ChangXin Memory Technologies, Cisco, Crocus Nanoelectronics, Crossbar, Cypress, Dell, eBay, EMC, Evaderis, Everspin, Facebook, Ferroelectric Memory Company, Fujitsu, Fusion IO, GigaDevice, GlobalFoundries, Google, H- Grace, Hikstor, HLMC, Honeywell, HP, HProbe, Huawei, IBM, Imec, Infineon, Intermolecular, Innovative Silicon, Intel, ITRI, Jiangsu Advanced Memory Technology, Kioxia, Lenovo, Macronix, Maxim, Materion, Mediatek, Microchip, Micron, Mythic, Nantero, Nanya, National Tsing Hua University, NEC, NetApp, Nike, Nokia, Numen, Numonyx, NXP, Panasonic, Qualcomm, Quantum, Rambus, Reliance, Renesas, Samsung, SanDisk, Seagate, SK Hynix, Smart Modular Technologies, SMIC, Sony, Spansion, Spin Memory, Spintec, Spreadtrum, STMicroelectronics, Stanford University, Syntiant, TDK, Tezzaron, Tohoku University, TEL, TEL Magnetic Solutions, Teledyne e2v, Toshiba, Towerjazz, TPSCo, Tsinghua Unigroup , TSMC, UMC, Violin Memory, Weebit, Western Digital, Winbond, XFab, XMC, YMTC, various emerging Chinese NVM players, and more. Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 4 REPORT OBJECTIVES • Present an overview of the semiconductor memory market: • Stand-alone (NAND, DRAM, NOR, etc.) and embedded memory (eFlash, SRAM): main markets, trends • Technology status, and roadmap for the coming years • Provide an understanding of emerging NVM applications: • Market drivers & challenges, technology roadmap, players, and main trends are provided for a total of 10 application fields: 5 for stand-alone and 5 for embedded.A roadmap with time-to-market (by application) is provided. • Offer market forecasts for emerging NVM business: • 2019-2025 market forecast in US$, M Gb, number of dies, wafer starts. • Price evolution, by application and technology • Forecast for 10 applications and 3 technologies (MRAM, RRAM, PCM) • Describe emerging NVM technologies: • Working principle, manufacturing methods, advantages/limitations, development status, price, time-to-market • Roadmap with technological nodes, and chip density evolution with main players • Latest product development status for each key market player • Detail and analyze the competitive landscape: • Recent acquisitions and funding • Latest company news • Key players, by technologies and applications Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 5 2020 REPORT UPDATES New content compared to the 2018 version Assessment of two newly-emerging market applications Embedded non-volatile memory for Analog IC products (EEPROM/eFlash replacement) Stand-alone code / data storage (NOR Flash replacement) Re-definition of the storage class memory (SMC) market segment with breakdown into the following categories: Persistent Memory, i.e. non-volatile memory modules based on emerging NVM media (e.g. 3D XPoint) Low-latency storage, i.e. solid-state drive for datacenter and client applications Updated analysis of the overall stand-alone and embedded memory markets Updated market forecast and technical trends for PCM, MRAM, and RRAM Updated analysis of China’s memory market, and a detailed list of emerging Chinese NVM players Analysis of Intel Optane’s NVDIMM and SSD: market and technology, ecosystem, present and future competitors (e.g. Micron’s X100). Description of the latest foundries’ technology processes and analysis of new IC products incorporating embedded emerging NVM. Analysis of In-Memory-Computing (IMC) approaches Neural Network (NN) computation with emerging memories. Update on newly-emerging technologies, including new ferroelectric memories and nanotube RAM (NRAM) Updated analysis of new entrants and startup funding Comprehensive list of companies’ announcements, press releases, industry news and highlights from the IEDM ’19 conference. Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 6 REPORT METHODOLOGY Yole’s market forecast model is based on the matching of several sources: Preexisting information Market Volume (in Munits) ASP (in $) Revenue (in $M) Information Aggregation Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 7 WHO SHOULD BE INTERESTED IN THIS REPORT? IC manufacturers and vendors, and IP sellers: Open foundries and IDMs: o Spot new opportunities and define diversification strategies o Evaluate the market potential of future technologies and products for new applicative markets o Position your company in the future of memory technologies o Screen potential new suppliers for introducing new disruptive technologies o Monitor and benchmark your competitors’ Equipment & material manufacturers: advancements o Understand emerging memory business and ecosystem dynamics o Discern the differentiated value of your products and Memory players : technologies in this market o Evaluate the market potential of emerging memory o Identify new business opportunities and prospects technologies o Screen potential applications and partners o Monitor and benchmark your competitors’ Financial & strategic investors: advancements o See the potential of new memory technologies o Obtain a list of key companies and start-ups Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 8 STAND-ALONE MEMORY MARKET – NAND AND DRAM • NAND and DRAM account for ≈XX% of the overall stand-alone memory market. • Combined NAND and DRAM revenue was ≈ $XXX billion in 2019, down XX% from 2019. 2019 Memory Market - Breakdown by Technology Growth of Revenue (%) of Revenue Growth Revenue in $B Revenue Total Stand-Alone Market in 2019 ≈ $XXXB Emerging Non-Volatile Memory 2020 | Sample | www.yole.fr | ©2020 9 STAND-ALONE MEMORY MARKET – OTHER TECHNOLOGIES • DRAM and NAND together represent ~XX% of the
Load more

Recommended publications
  • Class Notes Class: IX Topic: INPUT, OUTPUT, MEMORY and STORAGE DEVICES of a COMPUTER SYSTEM Subject: INFORMATION TECHNOLOGY
    Class Notes Class: IX Topic: INPUT, OUTPUT, MEMORY AND STORAGE DEVICES OF A COMPUTER SYSTEM Subject: INFORMATION TECHNOLOGY Q1. A collection of eight bits is called BYTE Q2. Which of the following is an example of non-volatile memory? a) ROM b)RAM c) LSI d) VLSI Q3. Which of the following is unit of measurement used with computer system? a) Byte b) Megabyte c) Gigabyte d) All of the above Q4. Which of the following statement is false? a) Secondary storage in non-volatile. b) Primary storage is volatile. c) When the computer is turned off, data and instructions stored in primary storage are erased. d) None of the above. Q5. The secondary storage devices can only store data but they cannot perform a) Arithmetic operation b) Logic operation c) Fetch operation d) Either of above Q6. Which of the following does not represent an I/O device a) Speaker which beep b) Plotter C) Joystick d) ALU Q7. Which of the following is a correct definition of volatile memory? a) It loses its content at high temperatures. b) It is to be kept in airtight boxes. c) It loses its contents on failure of power supply d) It does not lose its contents on failure of power supply Q8. One thousand byte represent a a) Megabyte b) Gigabyte c) Kilobyte d) None of these Q9.What does a storage unit provide? a) A place to show data b) A place to store currently worked on information b) A place to store information Q10. What are four basic components of a computer? a) Input devices, Output devices, printing and typing b) Input devices, processing unit, storage and Output devices c) Input devices, CPU, Output devices and RAM Q11.
    [Show full text]
  • The Era of Expeditious Nanoram-Based Computers Enhancement of Operating System Performance in Nanotechnology Environment
    International Journal of Applied Engineering Research ISSN 0973-4562 Volume 13, Number 1 (2018) pp. 375-384 © Research India Publications. http://www.ripublication.com The Era of Expeditious NanoRAM-Based Computers Enhancement of Operating System Performance in Nanotechnology Environment Mona Nabil ElGohary PH.D Student, Computer Science Department Faculty of Computers and Information, Helwan University, Cairo, Egypt. 1ORCID: 0000-0002-1996-4673 Dr. Wessam ElBehaidy Assistant Professor, Computer Science Department, Faculty of Computers and Information, Helwan University, Cairo, Egypt. Ass. Prof. Hala Abdel-Galil Associative Professor, Computer Science Department Faculty of Computers and Information, Helwan University, Cairo, Egypt. Prof. Dr. Mostafa-Sami M. Mostafa Professor of Computer Science Faculty of Computers and Information, Helwan University, Cairo, Egypt. Abstract They announced that by 2018 will produce the first NanoRAM. The availability of a new generation of memory that is 1000 times faster than traditional DDRAM which can deliver This new NanoRam has many excellent properties that would terabytes of storage capacity, and consumes very little power, make an excellent replacement for the current DDRAM: being has the potential to change the future of the computer’s non-volatile, its large capacity, high speed read / write cycles. operating system. This paper studies the different changes that All the properties are introduced in the next section. will arise on the operating system functions; memory By replacing this NanoRAM instead of DDRAM in the CPU, management and job scheduling (especially context switch) this will affect the functionality of the operating system; such when integrating NanoRAM into the computer system. It is as main memory management, virtual memory, job scheduling, also looking forward to evaluating the possible enhancements secondary storage management; and thus the efficiency of the of computer’s performance with NanoRAM.
    [Show full text]
  • Let's Talk About Storage & Recovery Methods for Non-Volatile Memory
    Let’s Talk About Storage & Recovery Methods for Non-Volatile Memory Database Systems Joy Arulraj Andrew Pavlo Subramanya R. Dulloor [email protected] [email protected] [email protected] Carnegie Mellon University Carnegie Mellon University Intel Labs ABSTRACT of power, the DBMS must write that data to a non-volatile device, The advent of non-volatile memory (NVM) will fundamentally such as a SSD or HDD. Such devices only support slow, bulk data change the dichotomy between memory and durable storage in transfers as blocks. Contrast this with volatile DRAM, where a database management systems (DBMSs). These new NVM devices DBMS can quickly read and write a single byte from these devices, are almost as fast as DRAM, but all writes to it are potentially but all data is lost once power is lost. persistent even after power loss. Existing DBMSs are unable to take In addition, there are inherent physical limitations that prevent full advantage of this technology because their internal architectures DRAM from scaling to capacities beyond today’s levels [46]. Using are predicated on the assumption that memory is volatile. With a large amount of DRAM also consumes a lot of energy since it NVM, many of the components of legacy DBMSs are unnecessary requires periodic refreshing to preserve data even if it is not actively and will degrade the performance of data intensive applications. used. Studies have shown that DRAM consumes about 40% of the To better understand these issues, we implemented three engines overall power consumed by a server [42]. in a modular DBMS testbed that are based on different storage Although flash-based SSDs have better storage capacities and use management architectures: (1) in-place updates, (2) copy-on-write less energy than DRAM, they have other issues that make them less updates, and (3) log-structured updates.
    [Show full text]
  • Press Release May 25, 2021
    Press Release May 25, 2021 NEW PAN-INDUSTRY ECO RATING SCHEME LAUNCHED FOR MOBILE PHONES • Deutsche Telekom, Orange, Telefónica, Telia Company and Vodafone unveil new consumer labelling to identify more sustainable mobile phones • Eco Rating to roll out across Europe from June 2021, including phones from 12 vendors Five of Europe’s leading mobile operators have joined forces to update and launch a new pan- industry Eco Rating labelling scheme that will help consumers identify and compare the most sustainable mobile phones and encourage suppliers to reduce the environmental impact of their devices. The Eco Rating initiative has been created jointly by Deutsche Telekom, Orange, Telefónica (operating under the O2 and Movistar brands), Telia Company and Vodafone to provide consistent, accurate information at retail on the environmental impact of producing, using, transporting and disposing of smartphones and feature phones. Eco Rating will enable operators and their customers to encourage wider rating of phones and demonstrate the demand for more sustainable electronics. A range of new consumer phones from 12 mobile phone brands will be assessed by the Eco Rating initiative, with others expected to be announced in the future. Launch partners include Bullitt Group – Home of CAT and Motorola rugged phones, Doro, HMD Global - Home of Nokia Phones, Huawei, MobiWire, Motorola / Lenovo, OnePlus, OPPO, Samsung Electronics, TCL / Alcatel, Xiaomi and ZTE. Starting from June 2021, the mobile operators will begin to introduce the distinct Eco Rating labelling at point of sale across 24 countries in Europe where they are present. Customers can learn more about the initiative and see how the rating is calculated by visiting a new website at www.ecoratingdevices.com and www.teliacompany.com/ecorating Following a detailed assessment, each mobile phone handset will be given an overall Eco Rating score out of a maximum of 100 to signal the environmental performance of the device across its entire life cycle.
    [Show full text]
  • Lecture 27 Semiconductor Memory: DRAM and Non-Volatile Memory Administrivia
    Lecture 27 Semiconductor Memory: DRAM and Non-Volatile Memory Digital Integrated Circuits Interconnect © Prentice Hall 2000 Administrivia l Today: Project phase 3 announcement. l Poster Session Tu 5/8 1-4pm » Location BWRC, 2108 Allston Way l Last lecture on Th 5/3 will cover issues in IC design Digital Integrated Circuits Interconnect © Prentice Hall 2000 1 Lectures Last l ROM and SRAM Today l Introducing the project phase III l DRAM and Non-volatile Digital Integrated Circuits Interconnect © Prentice Hall 2000 Project Phase III A proposed SRAM cell! w/ Control Circuit Digital Integrated Circuits Interconnect © Prentice Hall 2000 2 Tasks l Explain the behavior of the cell in its global contents. Provide transient simulations to illustrate. l Identify weakness of the cell in terms of signal integrity and power dissipation. Quantify your statements. l Propose an implementation that improves power dissipation. Digital Integrated Circuits Interconnect © Prentice Hall 2000 Report l Report » Comparison, Selection, Electrical Design » Cell Layout, Timing Waveforms in SRAM, Simulation » Power and Estimation and Proposal for SRAM power reduction l 3 slides on poster, each of which represents one of the tasks of the previous slide » Explanation of cell operation, comparison, design » Cell Operation in SRAM, Waveforms, Simulation » Proposal of improved SRAM implementation (from a power perspective) Digital Integrated Circuits Interconnect © Prentice Hall 2000 3 SEMICONDUCTOR MEMORIES Digital Integrated Circuits Interconnect © Prentice Hall 2000 3-Transistor DRAM Cell BL1 BL2 WWL WWL RWL RWL X X M3 VDD-VT M2 M1 VDD BL1 CS BL2 VDD-VT DV No constraints on device ratios Reads are non-destructive Value stored at node X when writing a “1” = VWWL-VTn Digital Integrated Circuits Interconnect © Prentice Hall 2000 4 3T-DRAM — Layout BL2 BL1 GND RWL M3 M2 WWL M1 Digital Integrated Circuits Interconnect © Prentice Hall 2000 1-Transistor DRAM Cell BL WL Write "1" Read "1" WL 1 M C X S GND VDD-VT V BL DD VDD/2 VDD/2 CBL sensing Write: CS is charged or discharged by asserting WL and BL.
    [Show full text]
  • Nanotechnology Trends in Nonvolatile Memory Devices
    IBM Research Nanotechnology Trends in Nonvolatile Memory Devices Gian-Luca Bona [email protected] IBM Research, Almaden Research Center © 2008 IBM Corporation IBM Research The Elusive Universal Memory © 2008 IBM Corporation IBM Research Incumbent Semiconductor Memories SRAM Cost NOR FLASH DRAM NAND FLASH Attributes for universal memories: –Highest performance –Lowest active and standby power –Unlimited Read/Write endurance –Non-Volatility –Compatible to existing technologies –Continuously scalable –Lowest cost per bit Performance © 2008 IBM Corporation IBM Research Incumbent Semiconductor Memories SRAM Cost NOR FLASH DRAM NAND FLASH m+1 SLm SLm-1 WLn-1 WLn WLn+1 A new class of universal storage device : – a fast solid-state, nonvolatile RAM – enables compact, robust storage systems with solid state reliability and significantly improved cost- performance Performance © 2008 IBM Corporation IBM Research Non-volatile, universal semiconductor memory SL m+1 SL m SL m-1 WL n-1 WL n WL n+1 Everyone is looking for a dense (cheap) crosspoint memory. It is relatively easy to identify materials that show bistable hysteretic behavior (easily distinguishable, stable on/off states). IBM © 2006 IBM Corporation IBM Research The Memory Landscape © 2008 IBM Corporation IBM Research IBM Research Histogram of Memory Papers Papers presented at Symposium on VLSI Technology and IEDM; Ref.: G. Burr et al., IBM Journal of R&D, Vol.52, No.4/5, July 2008 © 2008 IBM Corporation IBM Research IBM Research Emerging Memory Technologies Memory technology remains an
    [Show full text]
  • Memory Lane and a Look Down the Road: China Progressing in NAND but Hurdles Remain
    21 July 2019 | 12:06PM EDT Made in the USA or China Memory lane and a look down the road: China progressing in NAND but hurdles remain Mark Delaney, CFA +1(212)357-0535 | [email protected] Goldman Sachs & Co. LLC Allen Chang +852-2978-2930 | [email protected] Goldman Sachs (Asia) L.L.C. We believe that China’s efforts to enter the global DRAM and NAND markets merit a Daiki Takayama +81(3)6437-9870 | deeper dive into how the memory industries have evolved over time, what impact [email protected] Goldman Sachs Japan Co., Ltd. China’s entry into other commodity tech industries (such as LEDs and solar) has had Toshiya Hari on fundamentals, where we believe the leading China-based memory companies +1(646)446-1759 | [email protected] Goldman Sachs & Co. LLC stand at present with their efforts to enter the market (and the challenges that still Satoru Ogawa +81(3)6437-4061 | exist for entering the market — with GlobalFoundries as an example that [email protected] leading-edge semi production is difficult even for well-funded efforts), and what we Goldman Sachs Japan Co., Ltd. Alexander Duval believe all this means for the stocks of the established memory, drive, and semi +44(20)7552-2995 | [email protected] equipment companies. Goldman Sachs International Timothy Sweetnam, CFA With over $150 bn of semiconductors shipped to China in 2018, per the +1(212)357-7956 | [email protected] Semiconductor Industry Association (SIA), and China domestic semi firms having Goldman Sachs & Co.
    [Show full text]
  • Computer Conservation Society
    Issue Number 88 Winter 2019/20 Computer Conservation Society Aims and Objectives The Computer Conservation Society (CCS) is a co-operative venture between BCS, The Chartered Institute for IT; the Science Museum of London; and the Science and Industry Museum (SIM) in Manchester. The CCS was constituted in September 1989 as a Specialist Group of the British Computer Society. It is thus covered by the Royal Charter and charitable status of BCS. The objects of the Computer Conservation Society (“Society”) are: To promote the conservation, restoration and reconstruction of historic computing systems and to identify existing computing systems which may need to be archived in the future; To develop awareness of the importance of historic computing systems; To develop expertise in the conservation, restoration and reconstruction of historic computing systems; To represent the interests of the Society with other bodies; To promote the study of historic computing systems, their use and the history of the computer industry; To publish information of relevance to these objectives for the information of Society members and the wider public. Membership is open to anyone interested in computer conservation and the history of computing. The CCS is funded and supported by a grant from BCS and from donations. There are a number of active projects on specific computer restorations and early computer technologies and software. Younger people are especially encouraged to take part in order to achieve skills transfer. The CCS also enjoys a close relationship with the National Museum of Computing. Resurrection The Journal of the Computer Conservation Society ISSN 0958-7403 Number 88 Winter 2019/20 Contents Society Activity 2 News Round-Up 9 The Data Curator 10 Paul Cockshott From Tea Shops to Computer Company: The Improbable 15 Story of LEO John Aeberhard Book Review: Early Computing in Britain Ferranti Ltd.
    [Show full text]
  • L13, L13 Yoga, S2 5Th Gen and S2 Yoga 5Th Gen User Guide Read This First
    L13, L13 Yoga, S2 5th Gen and S2 Yoga 5th Gen User Guide Read this first Before using this documentation and the product it supports, ensure that you read and understand the following: • Appendix A “Important safety information” on page 69 • Safety and Warranty Guide • Setup Guide Second Edition (October 2019) © Copyright Lenovo 2019. LIMITED AND RESTRICTED RIGHTS NOTICE: If data or software is delivered pursuant to a General Services Administration “GSA” contract, use, reproduction, or disclosure is subject to restrictions set forth in Contract No. GS- 35F-05925. Contents About this documentation . iii Chapter 4. Accessories . 33 Purchase options . 33 Chapter 1. Meet your computer. 1 Docking station . 33 Front . 1 Front view . 34 Base . 3 Rear view . 35 Left . 5 Attach a docking station. 36 Right . 8 Detach a docking station . 37 Bottom . 10 Connect multiple external displays . 38 Features and specifications . 11 Statement on USB transfer rate . 12 Chapter 5. Secure your computer and information . 39 Chapter 2. Get started with your Lock the computer . 39 computer. 13 Use passwords . 39 Get started with Windows 10 . 13 Password types . 39 Windows account . 13 Set, change, and remove a password . 41 Windows user interface . 14 Use Power Loss Protection function . 42 Windows label . 15 Use the fingerprint reader (for selected models) . 42 Connect to networks . 15 Use face authentication (for selected models) . 43 Connect to the wired Ethernet . 15 Use firewalls and antivirus programs. 43 Connect to Wi-Fi networks. 15 Use Lenovo Vantage . 16 Chapter 6. Configure advanced Interact with your computer . 16 settings. 45 Use the keyboard shortcuts .
    [Show full text]
  • Tab M8 HD for Business + Smart Charging Station Reference
    PSREF Product Specifications Tab M8 HD for Business + Smart Charging Station Reference OVERVIEW 1. Volume button 3. Pogo pin connector (2-point) 2. Power button 4. USB-C 2.0 (data transfer / PD) Notes: • Card slot (not shown on the sample product above) is microSD card slot (WLAN model) or nano-SIM + microSD card slot (WWAN model) Tab M8 HD for Business + Smart Charging Station - September 14 2021 1 of 6 PSREF Product Specifications Tab M8 HD for Business + Smart Charging Station Reference PERFORMANCE Processor Processor Family MediaTek Processor Processor Processor Name Cores Max Frequency Memory Support Processor Graphics MediaTek Helio A22 ARM Cortex A53 Quad-core [email protected] LPDDR3 IMG PowerVR GE-class GPU Operating System Operating System[1] Android™ 9 (Pie) or later Notes: 1. Lenovo® tablets typically receive at least 1 Android OS upgrade cycle. May vary depending on models, countries, regions, retailers or operators. Please contact Lenovo support for more details Graphics Graphics Graphics Type Memory Key Features IMG PowerVR GE-class GPU Integrated Shared - Chipset Chipset MediaTek SoC (System on Chip) platform Memory Memory Type LPDDR4x Storage Storage Support • 32GB eMCP4x on systemboard • MicroSD card, supports FAT32 file up to 128GB, exFAT file up to 2TB Storage Type Disk Type Interface Offering Flash Memory eMMC 5.1 32GB Removable Storage Card Reader Nano-SIM + microSD card slot (WWAN model, supports FAT32 file up to 128GB, exFAT file up to 2TB) Multi-Media Speakers 2 side speakers, optimized with Dolby® Atmos® Microphone
    [Show full text]
  • Item Model Processor Lenovo Thinkpad X230 Tablet Intel Core I7
    Item Model Processor Lenovo Thinkpad X230 Tablet Intel Core i7 Toshiba Satellite E45-B4200 Intel Core i5 HP F9H61UA#ABA Lenovo Thinkpad X220 Lenovo Thinkpad T430 Intel Core i5 Lenovo Thinkpad W510 Intel Core i7 Lenovo B570 Intel Core i3 HP Stream Intel Celeron N3060 HP ASUS Q524U Intel Core i7 7th Gen HP Chromebook Intel Dell Chromebook 11 P22T Sony VAIO VPCS138EC Intel Core i5 Samsung Chromebook 500C Intel Toshiba Satellite E45t-A4100 Intel Core i5 ZED Note Intel Quad Core Samsung Chromebook XE513C24 HP Mini 311-1037NR Intel Atom HP Stream Intel HP Chromebook 11-SMB0 US HP Stream Toshiba NB305-N413BN Intel Atom MSI A4000 Intel Pentium HP Chromebook Intel Sony VAIO VPCF1 Intel Core i7 Lenovo Thinkpad E431 Intel Core i3 Lenovo G50 AMD E1 ASUS F555L Intel Core i3 Toshiba Satellite C655D-S5200 AMD Vision HP Chromebook Intel Celeron N3060 Samsung Notebook 550P Intel Core i3 Lenovo Thinkpad X131e Intel Dell Lattitude E6420 Intel Core i5 Lenovo Thinkpad T410 Intel Core i5 Samsung Chromebook Intel Samsung Chromebook 303C HP Chromebook Sonny VAIO VPCS115FG Intel Core i3-330M Samsung Chromebook 500C Intel Samsung Chromebook 500C Intel Toshiba Chromebook CB35-A3120 Intel Acer Chromebook R 11 Intel Lenovo Thinkpad X230 Tablet Intel Core i5 Samsung Chromebook 500C Intel HP Stream Samsung Chromebook 500C Intel Samsung Chromebook 500C Intel Compaq Presario CQ62 AMD HP Stream Intel Toshiba Chromebook CB35-B3340 Intel HP Pavilion x360 Intel Pentium Samsung Chromebook 303C Samsung Chromebook 500C Intel Samsung Chromebook 500C Intel HP Stream Intel Samsung
    [Show full text]
  • The Problem Faced and the Solution of Xiaomi Company in India
    ISSN: 2278-3369 International Journal of Advances in Management and Economics Available online at: www.managementjournal.info RESEARCH ARTICLE The Problem Faced and the Solution of Xiaomi Company in India Li Kai-Sheng International Business School, Jinan University, Qianshan, Zhuhai, Guangdong, China. Abstract This paper mainly talked about the problem faced and the recommend solution of Xiaomi Company in India. The first two parts are introduction and why Xiaomi targeting at the India respectively. The third part is the three problems faced when Xiaomi operate on India, first is low brand awareness can’t attract consumes; second, lack of patent reserves and Standard Essential Patent which result in patent dispute; at last, the quality problems after-sales service problems which will influence the purchase intention and word of mouth. The fourth part analysis the cause of the problem by the SWOT analysis of Xiaomi. The fifth part is the decision criteria and alternative solutions for the problems proposed above. The last part has described the recommend solution, in short, firstly, make good use of original advantage and increase the advertising investment in spokesman and TV show; then, in long run, improve the its ability of research and development; next, increase the number of after-sales service staff and service centers, at the same, the quality of service; finally, train the local employee accept company’s culture, enhance the cross-culture management capability of managers, incentive different staff with different programs. Keywords: Cross-cultural Management, India, Mobile phone, Xiaomi. Introduction Xiaomi was founded in 2010 by serial faces different problem inevitably.
    [Show full text]