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Qubit Control-Pulse Circuits in SOS-CMOS Technology for a Si:P Quantum Computer

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Qubit Control-Pulse Circuits in SOS-CMOS Technology for a Si:P Quantum Computer Qubit control-pulse circuits in SOS-CMOS technology for a Si:P quantum computer Author : S. Ramesh Ekanayake 1, 2 Degree : Doctor of Philosophy (Ph.D.) Supervisors : Dr Torsten Lehmann 1, 2 Co-supervisor : Prof. Andrew S. Dzurak 1, 2 Submitted : 31 Jul, 2008 1 Australian Research Council Center of Excellence for Quantum Computer Technology 2 School of Electrical Engineering and Telecommunications Intentionally left void THE UNIVERSITY OF NEW SOUTH WALES Thesis/Dissertation Sheet Surname or Family name: EKANAYAKE First name: SOBHATH Other name/s: RAMESH Abbreviation for degree as given in the University calendar: Ph.D. School: Electrical Engineering and Telecommunications Faculty: Engineering Title: Qubit control-pulse circuits in SOS-CMOS technology for a Si:P quantum computer Abstract 350 words maximum: (PLEASE TYPE) Microelectronics has shaped the world beyond what was thought possible at the time of its advent. One area of current research in this field is on the solid-state Si:P-based quantum computer (QC). In this machine, each qubit requires an individually addressed fast control-pulse for non- adiabatic drive and measure operations. Additionally, it is increasingly becoming important to be able to interface nanoelectronics with complementary metal-oxide-semiconductor (CMOS) technology. In this work, I have designed and demonstrated full-custom mixed-mode and full- digital fast control-pulse generators fabricated in a silicon-on-sapphire (SOS) CMOS commercial foundry process – a radio-frequency (RF) CMOS technology. These circuits are, fundamentally, fast monostable multivibrators. Initially, after the design specifications were decided upon, I characterized NFET and PFET devices and a n+-diffusion resistor from 500 nm and 250 nm commercial SOS-CMOS processes. Measuring their conductance curves at 300 K, 4.2 K, and sub-K (30 mK base to 1000 mK) showed that they function with desirable behaviour although exhibiting some deviations from their 300 K characteristics. The mixed-mode first generation control-pulse generator was demonstrated showing that it produced dwell-time adjustable pulses with 100 ps rise- times at 300 K, 4.2 K, and sub-K with a power dissipation of 12 µW at 100 MHz. The full-digital second generation control-pulse generator was demonstrated showing accurately adjustable dwell-times settable via a control-word streamed synchronously to a shift-register. The design was based on a ripple-counter with provisions for internal or external clocking. This research has demonstrated that SOS-CMOS technology is highly feasible for the fabrication of control microelectronics for a Si:P-based QC. I have demonstrated full-custom SOS-CMOS mixed-mode and full-digital control circuits at 300 K, 4.2 K, and sub-K which suitable for qubit control. Declaration relating to disposition of project thesis/dissertation I hereby grant to the University of New South Wales or its agents the right to archive and to make available my thesis or dissertation in whole or in part in the University libraries in all forms of media, now or here after known, subject to the provisions of the Copyright Act 1968. I retain all property rights, such as patent rights. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation. I also authorise University Microfilms to use the 350 word abstract of my thesis in Dissertation Abstracts International (this is applicable to doctoral theses only). …………………………………………………………… ……………………………………..……………… ……….……………………...…….… Signature Witness Date The University recognises that there may be exceptional circumstances requiring restrictions on copying or conditions on use. Requests for restriction for a period of up to 2 years must be made in writing. Requests for a longer period of restriction may be considered in exceptional circumstances and require the approval of the Dean of Graduate Research. FOR OFFICE USE ONLY Date of completion of requirements for Award: COPYRIGHT STATEMENT I hereby grant the University of New South Wales or its agents the right to archive and to make available my thesis or dissertation in whole or part in the University libraries in all forms of media, now or here after known, subject to the provisions of the Copyright Act 1968. I retain all proprietary rights, such as patent rights. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation. I also authorise University Microfilms to use the 350 word abstract of my thesis in Dissertation Abstract International (this is applicable to doctoral theses only). I have either used no substantial portions of copyright material in my thesis or I have obtained permission to use copyright material; where permission has not been granted I have applied/will apply for a partial restriction of the digital copy of my thesis or dissertation. Signed ……………………………………………........................... Date ……………………………………………........................... AUTHENTICITY STATEMENT I certify that the Library deposit digital copy is a direct equivalent of the final officially approved version of my thesis. No emendation of content has occurred and if there are any minor variations in formatting, they are the result of the conversion to digital format. Signed ……………………………………………........................... Date ……………………………………………........................... Preface Preface This thesis was inspired by my research interests since 2000 in exploring the fundamental science and engineering behind quantum and nanoelectronic devices, complimentary metal-oxide-semiconductor (CMOS) microelectronic integrated circuits (ICs), and their interconnection and integration. I approached my supervisors Dr Torsten Lehmann and Prof. Andrew Dzurak in the, now, Australian Research Council’s Center of Excellence for Quantum Computer Technology (CQCT) in 2004 with the vision of embarking on a journey of research that would take the first steps toward exploring my ideas. The work that ensued in this thesis has its concentration on the design, fabrication, and prototyping of full-custom CMOS-based qubit control-pulse generator (controller) circuits for operation at cryogenic temperatures for the center’s tentative Si:P-based qubits in a solid-state Si-based quantum computer (QC). Chapter 1 presents a literature review of current work on solid-state qubit control and readout circuit design, focusing on the former, towards the development of solid-state controller-qubit-observer (CQO) circuits and interfaces. This includes a brief introduction to qubits, and why we need the control mechanisms discussed in this work. The discussion, then, follows on to present some background and related work. Following this, I systematically present the motivations of this work by introducing a foundry fabricated silicon- on-insulator (SOI) technology that was selected due to the merits it offers for high-speed controller design: the Peregrine Semiconductor Corporation’s (PSC) ultra-thin-silicon (UTSiTM), alternatively, UltraCMOSTM) silicon-on-sapphire complimentary-metal-oxide-semiconductor (SOS-CMOS) 500 nm and 250 nm processes. i Preface Chapter 2 presents a detailed discussion on characterizing active and passive devices from both PSC 500 nm and 250 nm SOS-CMOS processes and presents device operation and measurement results at 300 K (room temperature), 4.2 K (liquid helium temperature), and sub-K (3He-4He dilution temperatures). Herein, sub-K refers to the range 30 mK base temperature to about 1000 mK unless stated otherwise. Chapter 3 presents the design and prototyping of a first generation control circuit in the 500 nm SOS-CMOS process. This design is based on a mixed- mode circuit design thus the objective is to shed light on this previously untried approach to qubit control using CMOS technology at low temperatures (sub-K and 1–4.2 K) and low-power dissipation levels (≤ 100 µW). Hence its complexity and device counts are minimized to maximize the probability of the circuit operating at sub-K and allow for the least possible power dissipation. Chapter 4 presents the design and prototyping a second generation control circuit in the 500 nm SOS-CMOS process. This design is based on a full-digital circuit design thus the objective is to explore the use of a sophisticated and complicated control circuit at sub-K temperatures. Chapter 5 is the conclusion encapsulating this body of work. This thesis is dedicated to all humanity and its evolutionary gift for abstract thought and ingenuity that enables it to bring to “reality” what was once an “impossibility”. May we continue this trend well into a prosperous future as a species in sustenance and harmony with nature! ii Abstract Abstract Microelectronics has shaped the world beyond what was thought possible at the time of its advent. One area of current research in this field is on the solid-state Si:P-based quantum computer (QC). In this machine, each qubit requires an individually addressed fast control-pulse for non-adiabatic drive and measure operations. Additionally, it is increasingly becoming important to be able to interface nanoelectronics with complementary metal-oxide-semiconductor (CMOS) technology. In this work, I have designed and demonstrated full- custom mixed-mode and full-digital fast control-pulse generators fabricated in a silicon-on-sapphire (SOS) CMOS commercial foundry process – a radio- frequency (RF) CMOS technology. These circuits are, fundamentally, fast monostable multivibrators. Initially, after the design specifications were
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