DOCSLIB.ORG

Introduction to Semiconductor Processing Brendan O'neill

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text

Load more

Fabrication of Nanoelectronic Devices and their Applications (Introduction to UE4008) Dr. Ray Duffy, Tyndall-U.C.C. 1 Silicon enables technology all around us I’ll be back Silicon transistor technology Scaling : Increasing performance and functionality This Silicon is in your phone now.... Easy to process, Well-known, Strong, Reliable Silicon we are working on at Tyndall-UCC SEM of fabricated test Substrate structure Metal Metal Silicon 3 20 nm lines 20 nm spaces 50 µm Silicon nanowires are in there Silicon isn’t going away soon.... Overview • Impact and Markets • Evolution of the MOS transistor • Future Directions • New device architectures • Replacing Si 7 Impact & Grand Challenges • 21st century society faces serious challenges : •Need to reduce CO2 emissions to combat climate change • An ageing population needs better healthcare and earlier diagnosis to prevent poor health • As the information highway expands, infrastructure must handle more data while consuming less energy • Ensuring safety and security in modern-day society and has become a substantial challenge 8 Markets 9 Markets 10 Markets 10.5 cm 10.5 cm × 6.8×109 = 7.14×105 km 11 Placed end-to-end : You are here Smartphones could reach to the moon and back 3.85 ×105 km 10.5 cm × 6.8×109 = 7.14×105 km 12 Evolution and revolution Price Performance Battery life time 13 Increasing functionality & performance Skynet’s roadmap : T-800 T-1000 T-X (Standard model) (Advanced) (Even more advanced) I’m back Increasing functionality & performance 14 Markets http://www.electroiq.com/articles/sst/print/volume-56/issue- 2/departments/news/10-ic-product-segments-to-exceed-total.html 15 16 Sales leaders : tool vendors 17 Overview • Impact and Markets • Evolution of the MOS transistor • Future Directions • New device architectures • Replacing Si 18 Background "Method and Apparatus for The first operational Ge transistor ; Controlling Electric Currents“ Julius Bardeen, Brattain, and Shockley, E. Lilienfeld, 1926 1947 19 Background “Cramming More Components Onto Integrated Circuits” G. E. Moore, Electronics, Volume 38, Number 8, April 19, 1965 Transistors × 2 every 2 years Moore’s Law I. Ferain et al. Nature, 2011 # transistors = 2300 # transistors > 2.5 billion Coming soon 10 µm process 22 nm process 14 nm 1971 2010 process 2016? 20 21 Power consumption Static power stars to be dominant in advanced technology nodes 22 Application : the field effect transistor MOSFET: Metal-Oxide-Semiconductor Field Effect Transistor Invented: Lilienfeld 1926. First made: Kahng, Attala 1960 Properties of a MOSFET: Small area Low power Simple technology Lower switching speed than bipolar device CMOS: Complementary MOS: NMOS + PMOS CMOS combines high packing density with low power 23 MOS operation : it’s a switch Log(IDS) VVGSGS >< = V 0T I VDS = VDD ON Oxide Metal Gate (Gate) Source Drain Source Drain IOFF VT VDD • We want VGS • ION high (speed) • IOFF low (power dissipation) 24 NMOS and PMOS transistors Free electron Free hole NMOS PMOS + + + - - - Conducts at +VG Conducts at -VG Vdd Vin PMOS Vout CMOS : B = nwell Vss Vdd NMOS + PMOS e.g. inverter Vin Vout n-well B = pwell p-substrate NMOS 25 Everything Scales Down • Minimum Feature Size • Film Thicknesses • Junction Depths • Power Supply Voltages 26 Scaling : Industrial motivation… $ Money $ More chips per Silicon area more profit $ Money $ Industry can put more functions on one chip cheaper products $ Money $ Scaled technologies are faster Digital revolution $ Scaled technologies dissipate less energy new (mobile) markets 27 Drive current means Circuit Speed Discharged capacitor Charged capacitor “0” “1” +++ “off-state” “on-state” Speed: • Time to switch from off-state to on-state vice versa • Time needed to (dis)charge the equivalent gate capacitor • Intrinsic gate delay t = charge/current = CV/I 28 Non-ideal MOSFET operation (tends to get worse as you scale down!!!) • Leakage currents • junction leakage, gate-induced drain leakage, gate current • Short channel effects • drain-induced barrier lowering, VT rolloff, reverse short channel effect, change of swing and body factor, punchthrough • MOSFET degradation • Hot carrier degradation, stress-induced leakage current, oxide breakdown, negative bias temperature instabilities 29 Short-channel effects (SCE) : The gate loses control V Ioff Ion GS 103 Gate VDS 102 ) S D 101 W = m m) FIN / 8 nm 0 42 nm A A/ 10 22 nm ( 32 nm ( 32 nm -1 22 nm DS V DS 10 I 42 nm Depletion regions GS I 8 nm Lgate ↑ -2 10 Gate VDS L V =DS 40=V nmDD G -3 10 S D 0.0 0.2 0.4 0.6 0.8 1.0 V (V) G 30 Two gates are better than one Gate Gate S D S D I Ion on Ioff Ioff 31 The FinFET/MugFET concept source box buried oxide drain scalable automatically self-aligned process simplicity, close to standard CMOS processing double-gate, triple-gate 32 Cross-sections through a FinFET Through gate Tilted top view B’ NiSi NiSi poly-Si NiSi Gate Source Drain High-k + MG B 20 nm Si Fin Buried oxide 33 Cross-sections through a FinFET Through fin A-A’ Tilted top view NiSi A’ A Poly-Si Gate Fin 34 (September 2012) “TSMC integrates Ge on Si in p-type FinFETs” “GlobalFoundries tips 14 nm FinFETs ….” 35 Overview • Impact and Markets • Evolution of the MOS transistor • Future Directions • New device architectures • Replacing Si 36 Evolution of MOS Transistors “Gate-all-Around” “3 Gates” “2 Gates” Gate Source Drain “1 Gate” ID Buried oxide Polysilicon Gate Gate Silicon Source Drain Fin BOX 20 nm Gate Gate Buried Oxide Gate Tri-Gate with 800C 600Torr 5min H2Anneal Source Drain Fins are 45x78nm, Nice corner rounding by H2 anneal Buried oxide Source Drain Back gate (substrate) Gate 38 39 40 Holy grail : Ge & III-Vs with Si Material Si Ge GaAs In0.53Ga0.47As InAs InSb Electron Mobility 1400 3900 8500 14000 40000 78000 (cm2/Vs) Hole mobility 450 1900 400 300 500 850 (cm2/Vs) III-V n-FETs combined with Improved performance/power Ge p-FETs consumption ratio 41 Beyond 2020 Exploration of ideas capable of replacing CMOS technology in the 2020 timeframe and beyond Heterogeneous integration of new technologies with the CMOS platform Fundamental new approaches to information processing The state variable is something other than electronic charge Spin Molecular state Photons Phonons Mechanical state Quantum state 42 Top Down vs Bottom Up Even though “traditional” scaling ended at the 90nm node (according to Intel) The devices are still recognisable as MOS devices Bottom up research is looking at alternatives Graphene Carbon nanotubes Molecular Devices Single Electron Transistors Spin Devices Ferromagnetic Logic Devices 43 Graphite and graphene Carbon: Two allotropes – diamond & graphite Graphite: Semi-metal. Layered material where carbon atoms in each layer (graphene sheets) are arranged in honeycomb structure. Metal Semiconductor Graphite Energy band structure Dark: filled states Graphene: one carbon atom at each vertex Light: empty states 44 Graphene: 2D Carbon Electronics Recent work - : • Sheets one atom thick! • Max Current Densities J > 108 A/cm2 • μ ≈5,000 cm2V–1s–1 up to 300 K. Graphene Potential: S D • Room Temperature ballistic nano-interconnects SiO2 (90 nm or 300 nm) • Sensors (Micron-scale and nanoscale) Si (gate) • Field-effect Devices (bilayers) 45 Other 2D materials . TMDs (transition-metal dichalcogenides) show promise WITH a bandgap!!! . e.g. MoS2 . Only very early work done in this area . Flakes of material 46 TMD 2D materials Transition Chalcogens Metals 47 TMDs: from crystal to device Starting point… … Final Structure! • Cleaning of the surface; S Electrical Characterization: Mo • Metal deposition through IV Curves Extraction Lift-Off process; 6.15 Ang. 48 Overview • Impact and Markets • Evolution of the MOS transistor • Future Directions • Conclusions 49 Where will it end? • Research is currently handing over the 10 nm process which is scheduled for 2015 • 5 nm will be the 2019 process 50 Summary . Moore’s law just keeps going . Increasingly novel solutions are found . Lots of questions below 10 nm… . ….structures, materials, processes, metrology . Exciting times! 51 .
Recommended publications
  • Mack DFM Keynote

    Mack DFM Keynote

    The future of lithography and its impact on design Chris Mack www.lithoguru.com 1 Outline • History Lessons – Moore’s Law – Dennard Scaling – Cost Trends • Is Moore’s Law Over? – Litho scaling? • The Design Gap • The Future is Here 2 1965: Moore’s Observation 100000 65,000 transistors 10000 Doubling each year 1000 100 Components per chip per Components 10 64 transistors! 1 1959 1961 1963 1965 1967 1969 1971 1973 1975 Year G. E. Moore, “Cramming More Components onto Integrated Circuits,” Electronics Vol. 38, No. 8 (Apr. 19, 1965) pp. 114-117. 3 Moore’s Law “Doubling every 1 – 2 years” 25 nm 100000000000 10000000000 feature size + die size 1000000000 100000000 10000000 1000000 Today only lithography 100000 25 µm contributes 10000 1000 Componentsper chip 100 feature size + die size + device cleverness 10 1 1959 1969 1979 1989 1999 2009 2019 Year 4 Dennard’s MOSFET Scaling Rules Device/Circuit Parameter Scaling Factor Device dimension/thickness 1/ λ Doping Concentration λ Voltage 1/ λ Current 1/ λ Robert Dennard Capacitance 1/ λ Delay time 1/ λ Transistorpower 1/ λ2 Power density 1 There are no trade-offs. Everything gets better when you shrink a transistor! 5 The Golden Age 1975 - 2000 • Dennard Scaling - as transistor shrinks it gets: – Faster – Lower power (constant power density) – Smaller/lighter • Moore’s Law – More transistors/chip & cost of transistor = ‒15%/year • More powerful chip for same price • Same chip for lower price – Many new applications – large increase in volume 6 Problems with Dennard Scaling • Voltage stopped shrinking
  • Reliability Evaluation of Finfet-Based Srams in the Presence of Resistive Defects

    Reliability Evaluation of Finfet-Based Srams in the Presence of Resistive Defects

    UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL INSTITUTO DE INFORMÁTICA PROGRAMA DE PÓS-GRADUAÇÃO EM MICROELETRÔNICA THIAGO SANTOS COPETTI Reliability Evaluation of FinFET-based SRAMs in the Presence of Resistive Defects Thesis presented in partial fulfillment of the requirements for the degree of PhD in Microelectronics Advisor: Prof. Dr. Tiago Roberto Balen Coadvisor: Profa. Dra. Letícia Maria Bolzani Poehls Porto Alegre February 2021 CIP — CATALOGING-IN-PUBLICATION Copetti, Thiago Santos Reliability Evaluation of FinFET-based SRAMs in the Pres- ence of Resistive Defects / Thiago Santos Copetti. – Porto Alegre: PGMICRO da UFRGS, 2021. 121 f.: il. Thesis (Ph.D.) – Universidade Federal do Rio Grande do Sul. Programa de Pós-Graduação em Microeletrônica, Porto Alegre, BR–RS, 2021. Advisor: Tiago Roberto Balen; Coadvisor: Letícia Maria Bolzani Poehls. 1. FinFET. 2. SRAM. 3. Resistive Defects. 4. SPICE. 5. TCAD. 6. Reliability. 7. Single Event Transient Modeling. I. Balen, Tiago Roberto. II. Poehls, Letícia Maria Bolzani. III. Tí- tulo. UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL Reitor: Prof. Carlos André Bulhões Vice-Reitora: Profa. Patricia Helena Lucas Pranke Pró-Reitor de Pós-Graduação: Prof. Júlio Otávio Jardim Barcellos Diretora do Instituto de Informática: Profa. Carla Maria Dal Sasso Freitas Coordenador do PGMICRO: Prof. Tiago Roberto Balen Bibliotecária-chefe do Instituto de Informática: Beatriz Regina Bastos Haro THIAGO SANTOS COPETTI Reliability Evaluation of FinFET-based SRAMs in the Presence of Resistive Defects Orientador: Dr. Tiago Roberto Balen Coorientador: Dra. Letícia Maria Bolzani Poehls Porto Alegre February 2021 DEDICATION I dedicate this work to my wife, my parents, and my siblings. “Nobody told me it was impossible, so I did” —JEAN COCTEAU ACKNOWLEDGMENT Firstly, I would like to thank my advisors and friends, Prof.
  • Risk Factors

    Risk Factors

    Risk Factors •Today’s presentations contain forward-looking statements. All statements made that are not historical facts are subject to a number of risks and uncertainties, and actual results may differ materially. Please refer to our most recent Earnings Release and our most recent Form 10-Q or 10-K filing for more information on the risk factors that could cause actual results to differ. •If we use any non-GAAP financial measures during the presentations, you will find on our website, intc.com, the required reconciliation to the most directly comparable GAAP financial measure. Rev. 4/19/11 Today’s News The world’s first 3-D Tri-Gate transistors on a production technology New 22nm transistors have an unprecedented combination of power savings and performance gains. These benefits will enable new innovations across a broad range of devices from the smallest handheld devices to powerful cloud-based servers. The transition to 3-D transistors continues the pace of technology advancement, fueling Moore’s Law for years to come. The world’s first demonstration of a 22nm microprocessor -- code-named Ivy Bridge -- that will be the first high-volume chip to use 3-D Tri-Gate transistors. Energy-Efficient Performance Built on Moore’s Law 1 65nm 45nm 32nm 22nm 1x 0.1x > 50% 0.01x reduction Lower Active Power Active Lower Lower Transistor Leakage Transistor Lower Active Power per Transistor (normalized) Transistor per Power Active 0.001x Constant Performance 0.1 65nm 45nm 32nm 22nm Higher Transistor Performance (Switching Speed) Planar Planar Planar Tri-Gate Source: Intel 22 nm Tri-Gate transistors increase the benefit from a new technology generation Source: Intel Transistor Innovations Enable Technology Cadence 2003 2005 2007 2009 2011 90 nm 65 nm 45 nm 32 nm 22 nm Invented 2nd Gen.
  • 3D-AFM Measurements for Semiconductor Structures and Devices

    3D-AFM Measurements for Semiconductor Structures and Devices

    3D-AFM Measurements for Semiconductor Structures and Devices Ndubuisi G. Orji and Ronald G. Dixson Engineering Physics Division Physical Measurement Laboratory National Institute of Standards and Technology Gaithersburg, MD, 20899, USA Abstract This book chapter reviews different types of three-dimensional atomic force microscope (3D-AFM) measurements for semiconductor metrology. It covers different implementations of 3D-AFM, calibrations methods, measurement uncertainty considerations and applications. The goal is to outline key aspects of 3D-AFM for dimensional semiconductor measurements in a way that is accessible to both new and experienced users and gives readers a strong foundation for further study. Preprint version For published version see: N. G. Orji & R. G. Dixson “3D-AFM Measurements for Semiconductor Structures and Devices” In Metrology and Diagnostic Techniques for Nanoelectronics (eds. Z. Ma, & D. G. Seiler) (Pan Stanford, 2017). Official contributions of the U.S. Government, not subject to copyright. Certain commercial equipment, instruments, materials or companies are identified in this paper in order to specify the experimental procedure adequately, or to give full credit to sources of some material. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. 3D-AFM Measurements for Semiconductor Structures and Devices Table of
  • Introducing 10-Nm Finfet Technology in Microwind Etienne Sicard

    Introducing 10-Nm Finfet Technology in Microwind Etienne Sicard

    Introducing 10-nm FinFET technology in Microwind Etienne Sicard To cite this version: Etienne Sicard. Introducing 10-nm FinFET technology in Microwind. 2017. hal-01551695 HAL Id: hal-01551695 https://hal.archives-ouvertes.fr/hal-01551695 Submitted on 30 Jun 2017 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. APPLICATION NOTE 10 nm technology Introducing 10-nm FinFET technology in Microwind Etienne SICARD Professor INSA-Dgei, 135 Av de Rangueil 31077 Toulouse – France www.microwind.org email: [email protected] This paper describes the implementation of a high performance FinFET-based 10-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed. 1. Technology Roadmap Several companies and research centers have released details on the 14-nm CMOS technology, as a major step for improved integration and performances, with the target of 7-nm process by 2020. We recall in
  • The Impact of China's Policies on Global Semiconductor

    The Impact of China's Policies on Global Semiconductor

    Moore’s Law Under Attack: The Impact of China’s Policies on Global Semiconductor Innovation STEPHEN EZELL | FEBRUARY 2021 China’s mercantilist strategy to grab market share in the global semiconductor industry is fueling the rise of inferior innovators at the expense of superior firms in the United States and other market-led economies. That siphons away resources that would otherwise be invested in the virtuous cycle of cutting-edge R&D that has driven semiconductor innovation for decades. KEY TAKEAWAYS ▪ No industry has an innovation dynamic quite like the semiconductor industry, where “Moore’s Law” has held for decades: The number of transistors on a microchip doubles about every two years, producing twice the processing power at half the cost. ▪ The pattern persists because the semiconductor industry vies with biopharmaceuticals to be the world’s most R&D-intensive industry—a virtuous cycle that depends on one generation of innovation to finance investment in the next. ▪ To continue heavy investment in R&D and CapEx, semiconductor firms need access to large global markets where they can compete on fair terms to amortize and recoup their costs. When they face excess, non-market-based competition, innovation suffers. ▪ China’s state-directed strategy to vault into a leadership position in the semiconductor industry distorts the global market with massive subsidization, IP theft, state-financed foreign firm acquisitions, and other mercantilist practices. ▪ Inferior innovators thus have a leg up—and the global semiconductor innovation curve is bending downward. In fact, ITIF estimates there would be 5,100 more U.S. patents in the industry annually if not for China’s innovation mercantilist policies.
  • Electrical Characterization and Modeling of Low Dimensional Nanostructure FET Jae Woo Lee

    Electrical Characterization and Modeling of Low Dimensional Nanostructure FET Jae Woo Lee

    Electrical characterization and modeling of low dimensional nanostructure FET Jae Woo Lee To cite this version: Jae Woo Lee. Electrical characterization and modeling of low dimensional nanostructure FET. Autre. Université de Grenoble; 239 - Korea University, 2011. Français. NNT : 2011GRENT070. tel- 00767413 HAL Id: tel-00767413 https://tel.archives-ouvertes.fr/tel-00767413 Submitted on 19 Dec 2012 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THÈSE Pour obtenir le grade de DOCTEUR DE LUNIVERSITÉ DE GRENOBLE Spécialité : Micro et Nano Électronique Arrêté ministériel : 7 août 2006 Présentée par Jae Woo LEE Thèse dirigée par Mireille MOUIS et Gérard GHIBAUDO préparée au sein du Laboratoire IMEP-LAHC dans l'École Doctorale EEATS Caractérisation électrique et modélisation des transistors à effet de champ de faible dimensionnalité Thèse soutenue publiquement le 5 décembre 2011 devant le jury composé de : M. Gérard GHIBAUDO DR CNRS Alpes-IMEP/INPG, Président M. Jong-Tae PARK Dr Incheon University, Rapporteur M. Jongwan JUNG Dr Sejong University, Rapporteur
  • United States Securities and Exchange Commission Form

    United States Securities and Exchange Commission Form

    UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 8-K CURRENT REPORT Pursuant to Section 13 OR 15(d) of The Securities Exchange Act of 1934 Date of Report: November 20, 2014 (Date of earliest event reported) INTEL CORPORATION (Exact name of registrant as specified in its charter) Delaware 000-06217 94-1672743 (State or other jurisdiction (Commission (IRS Employer of incorporation) File Number) Identification No.) 2200 Mission College Blvd., Santa Clara, California 95054-1549 (Address of principal executive offices) (Zip Code) (408) 765-8080 (Registrant's telephone number, including area code) (Former name or former address, if changed since last report) Check the appropriate box below if the Form 8-K filing is intended to simultaneously satisfy the filing obligation of the registrant under any of the following provisions (see General Instruction A.2. below): [ ] Written communications pursuant to Rule 425 under the Securities Act (17 CFR 230.425) [ ] Soliciting material pursuant to Rule 14a-12 under the Exchange Act (17 CFR 240.14a-12) [ ] Pre-commencement communications pursuant to Rule 14d-2(b) under the Exchange Act (17 CFR 240.14d-2(b)) [ ] Pre-commencement communications pursuant to Rule 13e-4(c) under the Exchange Act (17 CFR 240.13e-4c)) Item 7.01 Regulation FD Disclosure The information in this report shall not be treated as filed for purposes of the Securities Exchange Act of 1934, as amended. On November 20, 2014, Intel Corporation presented business and financial information to institutional investors, analysts, members of the press and the general public at a publicly available webcast meeting (the "Investor Meeting").
  • Lecture 25: Enhancement Type MOSFET Operation, P-Channel, and CMOS

    Lecture 25: Enhancement Type MOSFET Operation, P-Channel, and CMOS

    Whites, EE 320 Lecture 25 Page 1 of 11 Lecture 25: Enhancement Type MOSFET Operation, P-channel, and CMOS. We will now move on to the second major type of transistor called the field effect transistor (FET). In particular, we will examine in detail the metal oxide semiconductor FET (MOSFET). This is an extremely popular type of transistor. MOSFETs have similar uses as BJTs. They can be used as signal amplifiers and electronic switches, for example. MOSFETS can be manufactured using a relatively simple process and made very small with respect to BJTs. There are two major types of MOSFETS, called enhancement type and depletion type. Each of these types can be manufactured with a so-called n channel or p channel: © 2017 Keith W. Whites Whites, EE 320 Lecture 25 Page 2 of 11 Enhancement Type, N Channel MOSFET The enhancement type MOSFET is the most widely used FET. It finds extensive use in VLSI circuits, for example. (In general, MOSFETs are not used too often in discrete component design.) The physical structure of this type of MOSFET (enhancement type NMOS) is shown in Fig. 5.1: (Fig. 5.1a) Four Terminals: “n+” means heavily doped Often the body and source are connected. (Fig. 5.1b) Whites, EE 320 Lecture 25 Page 3 of 11 Typical dimensional values are L = 0.1 to 3 m, W = 0.2 to 100 m, and tox = 2 to 50 nm. The minimum L and W dimensions are dictated by the resolution of the lithography process used to create the device. Around the 2007 time frame, Intel developed a 45-nm process, as described in the attached article from IEEE Spectrum.
  • Silicon and Silicide Nanowires

    Silicon and Silicide Nanowires

    S “This book contains a collection of the most recent studies written by highly recognized and ilicon authors in the field. The book is valuable especially for young scientists seeking inspiration from the most fascinating discoveries in the field. The book can also serve an excellent reference for experts.” Prof. Vassilios Vargiamidis Concordia University, Montreal, Canada Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet S real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental ilicide analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications. Yu Huang is a faculty member in the Department of Materials Sciences and Engineering at the University of California, Los Angeles (UCLA), USA. She received her PhD in physical chemistry from Harvard University, USA. Her research focuses on the fundamental principles governing nanoscale material synthesis and assembly at the molecular N edited by level, which can be utilized to design nanostructures and nanodevices with unique functions and properties to address critical challenges in anowires Yu Huang electronics, energy science, and biomedicine.
  • ZERO DEFECTS November 2015 Entegris Newsletter

    ZERO DEFECTS November 2015 Entegris Newsletter

    ZERO DEFECTS November 2015 Entegris Newsletter CONTENTS Entegris Expands CMP Filtration Technology 1. Entegris News Solutions and Research, Analytical and Entegris Expands CMP Filtration Technology Solutions and Research, Manufacturing Capabilities in Taiwan Analytical and Manufacturing Capabilities in Taiwan Microcontamination Control business SmartStack® 300 mm Contactless unit, Clint Haris. “Entegris continues to HWS Launch @ SEMICON® Europa invest in people, technology and facilities 2. Yield Improvement in Asia to introduce new solutions for the Tackling Materials Contamination semiconductor market. As our customers Control Complexities Below 22 nm produce integrated circuits with smaller Entegris Announces New feature sizes, our nanofiber technology reduces the number of defect-causing VaporSorb™ TRK Filter for Entegris announced at the SEMICON® contaminants from reaching the wafer.” Advanced Yield Protection in Taiwan tradeshow the development of Semiconductor Lithography a platform of CMP filtration solutions The Entegris filter platform using NMB Processing using nano-melt-blown (NMB) filtration media now includes the Planargard® bulk, 5. Innovation technology, as well as the expansion of Solaris® point-of-tool and Planarcap® Diffusion, a Key Parameter to its CMP research, analytical services and point-of-dispense families to provide Understand Contamination manufacturing capabilities in Taiwan. contamination control solutions through- Phenomena in FOUPs: These investments enable the company out the CMP process area. Developed and - Part 1 – Polymer Transport to further serve the growing demand for manufactured in Taiwan, the NMB media Coefficients Obtention advanced CMP filtration solutions. utilizes the increased porosity of the nanofibers to reduce shear stress placed - Part 2 – Coefficients Application “CMP processes continue to grow in upon the slurry during transport and in Numerical Simulation complexity in both the materials used filtration operations.
  • Carbon Nanotube Based VLSI Interconnects Analysis and Design

    Carbon Nanotube Based VLSI Interconnects Analysis and Design

    SPRINGER BRIEFS IN APPLIED SCIENCES AND TECHNOLOGY Brajesh Kumar Kaushik Manoj Kumar Majumder Carbon Nanotube Based VLSI Interconnects Analysis and Design SpringerBriefs in Applied Sciences and Technology More information about this series at http://www.springer.com/series/8884 Brajesh Kumar Kaushik Manoj Kumar Majumder Carbon Nanotube Based VLSI Interconnects Analysis and Design 1 3 Brajesh Kumar Kaushik Manoj Kumar Majumder Department of Electronics and Communication Engineering Indian Institute of Technology Roorkee Roorkee Uttarakhand India ISSN 2191-530X ISSN 2191-5318 (electronic) ISBN 978-81-322-2046-6 ISBN 978-81-322-2047-3 (eBook) DOI 10.1007/978-81-322-2047-3 Library of Congress Control Number: 2014946403 Springer New Delhi Heidelberg New York Dordrecht London © The Author(s) 2015 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher’s location, in its current version, and permission for use must always be obtained from Springer.