Modeling of the Substrate Coupling Path for Direct Power Injection in Integrated Circuits Ali Alaeldine∗†, Richard Perdriau∗, Mohamed Ramdani∗, Etienne Sicard‡, M’hamed Drissi† and Ali M. Haidar§ ∗ESEO-LATTIS - 4, rue Merlet-de-la-Boulaye - BP 30926 - 49009 Angers Cedex 01 - France (e-mail :
[email protected]) †IETR - INSA de Rennes - 20, avenue des Buttes de Coësmes - 35043 Rennes Cedex - France ‡LATTIS - INSA de Toulouse - 135, avenue de Rangueil - 31077 Toulouse Cedex 04 - France §Dept. of Computer Eng. and Informatics - Faculty of Engineering - Beirut Arab University - PO Box 11-5020 - Lebanon Abstract—This paper presents a substrate coupling path model Therefore, this paper aims at introducing suitable simulation for the direct power injection (DPI) of EMI disturbances into models for different EMI protection strategies in ICs, with the substrate of an integrated circuit (IC). This modeling is comparisons between simulations and measurements. For that achieved on a 0.18 µm test chip composed of several functionally identical cores, differing only by their EMI protection strategies purpose, a special test chip (CESAME) [8] will be used. (RC protection, isolated substrate), and takes into account these The paper is organized as follows. First of all, the internal different strategies. The comparison between simulation results structure of the CESAME test chip is introduced in Sect. and related measurements demonstrates that, once combined II. Then, Sect. III presents the DPI measurement set-up used with the complete model of the injection set-up itself, these in this study, along with its simulation model. The different models are helpful to choose the best protection strategy against electromagnetic disturbances.