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Substrate Crosstalk Suppression Using Wafer-Level Packaging: Metalized Through-Substrate Trench Approach

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Substrate Crosstalk Suppression Using Wafer-Level Packaging: Metalized Through-Substrate Trench Approach Substrate Crosstalk Suppression Using Wafer-Level Packaging: Metalized Through-Substrate Trench Approach Saoer Maniur SINAGA Substrate Crosstalk Suppression Using Wafer-Level Packaging Technique: Metalized Through-Substrate Trench Approach PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Technische Universiteit Delft, op gezag van de Rector Magni¯cus Prof. ir. K. Ch. A. M. Luyben, voorzitter van het College voor Promoties, in het openbaar te verdedigen op woensdag 6 oktober 2010 om 10.00 uur door Saoer Maniur SINAGA Master of Science in Communication Engineering, UniversitÄatKassel, geboren te Medan, IndonesiÄe. Dit proefschrift is goedgekeurd door de promotor: Prof. dr. J. N. Burghartz Samenstelling promotiecommissie: Rector Magni¯cus, voorzitter Prof. dr. J. N. Burghartz, Technische Universiteit Delft, promotor Dr. M. Bartek, Technische Universiteit Delft, co-promotor Prof. dr. P. M. Sarro, Technische Universiteit Delft Prof. dr. P. J. French, Technische Universiteit Delft Prof. dr. E. Charbon, Technische Universiteit Delft Prof. dr. ir. M. K. Smit, Technische Universiteit Eindhoven Dr. S. Wane, NXP Semiconductors Prof. dr. K. A. A. Makinwa, Technische Universiteit Delft, reservelid Copyright °c 2010 by S.M. Sinaga All rights reserved. No part of the material protected by this copyright notice may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying, recording or by any information storage and retrieval system, without the prior permission of the author. ISBN 978-90-8570-600-7 Author email: [email protected] Surely goodness and mercy shall follow me all the days of my life; and I will dwell in the house of the Lord forever (Psalm 23:6). To my parents Summary The demand for miniaturization technology has been increasing over the last decades. Consumer electronics end-users often, if not always, go for more func- tionality and practicality. This is translated into systems that are more complex and yet smaller in size such as smart cellular phones and portable audio/video systems. System on Chip (SoC) is still a solution preferred by many. The SoC comprises of many di®erent circuit blocks that fall into two categories namely analog/RF and digital. The integration of the analog/RF circuitry and digital circuitry on the same silicon substrate has yet another challenge to cope with. The noise generated from the switching activity of the digital circuitry is injected into the silicon substrate, which then can propagate to the sensitive analog/RF circuitry. Such substrate noise can signi¯cantly degrade the functionality of the analog/RF circuitry, thus deteriorating the performance of the entire electronic system. In this thesis, a method to isolate the noise generating circuit block from the noise sensitive circuit block is proposed and demonstrated. The proposed method is based on through-substrate trench isolation scheme to suppress the substrate noise. The idea behind this isolation scheme is to create a full through-substrate trench that physically separates the noise agressor from the victim. This idea is very simple and e®ective. The through-substrate trench is achieved by means of wafer-level packaging (WLP) technology and consists of only a few additional fabrication steps that can readily be incorporated in the WLP processing flow. In a few words, it can be described as follows: the silicon substrate is ¯rst bonded to a spacer substrate, e.g. AF-45 glass or High-Resistivity Polycrystalline Silicon (HRPS). Then, the bonded wafer stack is turned upside down before being thinned down. The next step is to create the through-substrate trench by means of KOH etching. At this stage, we now have an air-¯lled through- substrate trench. This isolation scheme can be further improved by metalizing i ii SUMMARY the trench resulting in a backside metal plane. The backside metal can then be connected to ground to drain the substrate noise. This is called grounded- metalized through-substrate trench. In this work, we have successfully fabricated and measured several devices, i.e. control device (without isolation), air-¯lled trench device, and metalized trench device. At 50 MHz air-¯led trench provides around 55 dB isolation with respect to control device, whereas the metalized-trench provides additional isolation of 7 dB. At 10 GHz air-¯lled trench provides around 10 dB isolation with respect to control device, whereas the metalized-trench provides additional isolation of 23 dB. At 40 GHz air-¯lled trench provides around 2 dB isolation with respect to control device, whereas the metalized-trench provides additional isolation of 20 dB. Samenvatting De vraag naar miniaturisatie technologie is over de laatste decaden continu blijven groeien. Gebruikers van consumenten elektronica gaan vaak, bijna altijd, voor hogere functionaliteit en praktisch gebruik. Dit vertaalt zich in complexere syste- men die toch steeds weer kleiner van afmetingen zijn, zoals intelligente mobieltjes, and draagbare audio/video systemen. System on Chip (SoC) is de voorkeurstech- nologie van de Chip fabrikanten om deze miniaturisatie te realiseren. De System on Chip bestaat uit vele verschillende bouwstenen van meer of minder complexe schakelingen die in twee categorien kunnen worden onderverdeeld: analoge/rf en digitale schakelingen. De integratie van analoge/rf schakelingen en digitale schake- lingen op het zelfde silicium substraat is een speciale uitdaging. De stoorsignalen, die worden gegenereerd door de schakelactiviteiten in de digitale schakelingen, komen in het silicium substraat terecht en kunnen via deze weg doorgegeven wor- den aan de gevoelige analoge/rf schakelingen. Deze substraatstoring kan op een signi¯cante wijze de functionaliteit van de analoge/rf circuits negatief benvloe- den, waardoor de prestaties, op elektronisch systeemniveau, onbevredigend kun- nen zijn. In deze thesis wordt een methode om demping aan te brengen tussen de storende schakeling en de storingsgevoelige schakeling, voorgesteld en het de werking aangetoond. De voorgestelde methode om de substraatstoring te reduceren, is gebaseerd op een het toevoegen van isolatie op basis van een kanaal dat over de volledige dikte van het silicium substraat wordt gemaakt through-substrate trench isolation in het vervolg in deze samenvatting kanaal genoemd. Het concept achter deze iso- latie aanpak is om een volledig kanaal te maken, die een fysieke barrire opwerpt tussen de bron en het mogelijk gestoorde schakeling. Deze aanpak is erg een- voudig en zeer e®ectief. Het kanaal wordt gemaakt met Wafer Level Packaging technologie en bestaat uit slechts een paar extra productie stappen, die direct in iii iv SAMENVATTING bestaande Wafer Level Packaging productie processen kan worden toegepast. Op hoofdlijnen kan het proces als volgt worden beschreven: Het silicium substraat wordt eerst verbonden met het spacer substraat. bijvoorbeeld op basis van AF-45 glas of High-Resistivity Polycrystalline Silicon (HRPS). Vervolgens wordt de ge- realiseerde wafer stack omgedraaid en op de juiste dikte gebracht thinned down. De volgende stap is om een kanaal te maken via een ets proces op KOH basis. In deze fase hebben we een op lucht gebaseerde through-substrate trench. De iso- latie kan vervolgens worden verbeterd door het metalliseren van het kanaal en zijn omgeving in het silicium substraat. Dit leidt tot een gemetalliseerde back- plane. Deze gemetalliseerde backplane kan vervolgens aan de aarde verbonden worden om de substraat storing af te voeren. Dit wordt een grounded-metalized through-substrate trench genoemd. In deze studie hebben we, met succes, meerdere test devices geproduceerd en gemeten. Het zijn een controle device (zonder isolatie), een lucht gesoleerd through-substrate trench device en een grounded-metalized through-substrate trench device. De resultaten van de metingen leverden de volgende isolatie verbeteringen op. Op 50 MHz gaf lucht isolatie een extra isolatie van 55 dB ten opzichte van het controle device. De metallisering leverde een extra winst van 7 dB. Op 10 GHz gaf lucht isolatie een extra isolatie van 10 dB ten opzichte van een controle device. De metallisering leverde een extra winst van 23 dB. Op 40 GHz gaf lucht isolatie een extra isolatie van 2 dB ten opzichte van het controle device. De metallisering leverde een extra winst van 20 dB op. Acknowledgements After many years of working and typing on the train, this adventure has ¯nally come to an end. The journey was de¯nitely not without ups and downs, nor could I cross the ¯nish line without the support and help from many people. I wish to express my gratitude to my promotor Prof. Dr.-Ing. Joachim N Burghartz for his guidance and encouragement during the course of my doctoral study, particularly for the time he spent to carefully review this thesis. I am forever grateful to my co-promotor Dr. Marian Bartek for his full support during my PhD study and after. I am also indebted to Dr. Behzad Rejaei and Gabriel Macias for many valuable discussions. Special thanks go to my project partner Alexander Polyakov for his excellent work in the clean room. Without him, I would not have had the device to measure. I would also like to thank scienti¯c members of DIMES Lab. for their help and support in the clean room. My ¯rst two years in Delft were cherished by my fellow PhD students Andrey Sachko and Harish Pillai. Italian pizza, gyros and beer colored our days in Delft. Dude, wherever you are, it was great time we had. My skill in playing pool seemed to improve a little thanks to Jason Tian, Huang Cong, Han Yan and Sebastian Sosin. I would also like to mention Marco Spirito, Koen Buisman, Edmund Neo, Huseyin Sagkol, Theodoros Zoumpoulidis and Hsien Chang Wu for the corridor and lunch discussions. I would also like to acknowledge Hok Yap of Philips Applied Technologies for his support in providing the dutch translation of the summary and propositions. v vi ACKNOWLEDGEMENTS I am grateful to my siblings for their support and encouragement.
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