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ON Semiconductor Is an Equal Opportunity/Affirmative Action Employer ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Automotive Smart Power Module, The 1200 V ASPM34 Series, Application Note AND90041 www.onsemi.com INTRODUCE The 1200 V ASPM34 series extends the existing APPLICATION NOTE Intelligent Power Module product portfolio, qualifying them to meet the performance and reliability requirements of automotive auxiliary motor drives in Hybrid and Electric gate−driving High−Voltage Integrated Circuit (HVIC), a Vehicle application. This application note supports the new Insulated−Gate Bipolar Transistor (IGBT) of advanced 1200 V ASPM34 series. It should be used in conjunction silicon technology, and improved Direct Bonded Copper with the 1200 V ASPM34 datasheets and application note (DBC) substrate base transfer mold package. The 1200 V AN−9076 (Mounting Guidance). ASPM34 achieves reduced board size and improved reliability compared to existing discrete solutions. Target applications are inverter motor drives for Auto−motive use, such as E−compressor, Oil pump, Fuel pump, Water pump, cooling fans and other auxiliary motors in Hybrid and Electric Vehicles. A design advantage integrates an NTC thermistor for temperature measuring of power chips (e.g. IGBTs, Fast−Recovery Diode (FRDs) on the same substrate. Most customers want to know the exact temperature of power chips because temperature affects the quality, reliability, and longevity of products. This desire is thwarted because integrated power chips (e.g. IGBTs, FRD) inside modules operate in high−voltage conditions. Therefore, instead of directly sensing the temperature of power chips, customers have been using an external NTC thermistor for sensing the Figure 1. temperature of the module or heat−sink. This method doesn’t accurately reflect the temperature of power Design Concept components due to cost, but is simple. The NTC thermistor The 1200 V ASPM34 design objective is to provide a of the 1200 V ASPM34 is integrated with the power chips minimized package and a low power consumption module on the same ceramic substrate and therefore more accurately with improved reliability. This is achieved by applying new reflects the temperature of power chips. Figure 2. External View and Internal Structure of the 1200 V ASPM34 © Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: May, 2021 − Rev. 1 AND90041/D AND90041 Key Features • Single−Grounded Power Supply Supported • Automotive Qualified (AEC−Q100, Q101 and AQG324) • Built−in NTC Thermistor for Temperature Monitoring • 1200 V ASPM34, 3−Phase IGBT inverter with Integral and Management gate drivers and protection • Adjustable Over−Current Protection via Integrated • Low−Loss, Short−Circuit Rated IGBTs Sense−IGBTs • Very Low Thermal Resistance by Adopting DBC • Isolation Rating of 2500 VRMS / 1 min Substrate • Pb−Free and RoHS compliant • Built−In Bootstrap Diode and Dedicated Vs Pins Simplify PCB Layout PRODUCT DESCRIPTION • Separate Open−Emitter pins from Low−Side IGBTs for Ordering Information Three−Phase current sensing NFVA502 12 XX XX Customized Option None : Standard Lead forming 1 : Short Lead /Zig Zag /Double N 2 : Long Lead /Flat /Flat N Silicon Technology NP : NPT Trench IGBT Voltage Rating L3 : Field Stop Trench IGBT 65 : 650 V L4 : Field Stop Trench IGBT 12 : 1200 V Current Rating 30 : 30A rating 40 : 40A rating Package type 50 : 50A rating 2 : ASPM 34 Configuration 3 : ASPM 27 A : Inverter 9 : ASPM 14 Automotive None : Standard V : Auto Qualified IPM & SPM N :ON Semiconductor Figure 3. Ordering Information Product Line−up Motion Control Design Tool is recommended to find out the Table 1 shows the basic line up without package right the 1200 V ASPM34 product for the desired variations. Online loss and temperature simulation tool, application. Table 1. PRODUCT LINE−UP Target Application Device IGBT Rating Motor Rating (Note 1) Isolation Voltage E−compressor, Oil pump, NFVA22512NP2T 25 A / 1200 V 3.7 kW / 440 VAC VISO = 2500 VRMS Fuel pump, Water pump, (Sine 60 Hz, 1−min Cooling Fans NFVA23512NP2T 35 A / 1200 V 5.5 kW / 440 VAC All Shorted Pins Heat Sink) NFVA25012NP2T 50 A / 1200 V 7.5 Kw / 440 VAC ° ° 1. These motor ratings are simulation results under following conditions: VAC = 440 V, VDD = 15 V, TC = 100 C, Tj = 150 C, fPWM = 5 kHz, PF = 0.8, MI = 0.9, Motor efficiency = 0.75, overload 150% for 1min. These motor ratings are general ratings, so may be changed by conditions. www.onsemi.com 2 Pin Description Internal CircuitDiagram ASPM34 asshowninFigure4. ASPM34 1200 VASPM34series. There istheinternalcircuitdiagramof1200V Figure 5showsthelocationofpinsandnames Figure 4. The 1200 V ASPM34 Version InternalCircuit Figure 4.The1200VASPM34Version Figure 5.PackageTop (34) VS(W) (33) VB(W) (32) VBD(W) (31) VDD(WH ) (1) P (30) IN(WH ) (29) VS(V) (28) VB(V) www. (2) W (27) VBD(V) (26) VDD(VH) AND90041 (25) IN(VH) PACKAGE onsemi.com (24) VS(U) − (3) V (23) VB(U) View andPin Assignment View 3 (22) VBD(U) (21) VDD(UH) (20) COM(H) (4) U (19) IN(UH) (18) RSC (5) NW (17) CSC (6) NV (16) CFOD (15) VFO (14) IN(WL) (7) NU (13) IN(VL) (12) IN(UL) (8) RTH (11) COM(L) (9)VTH (10) VDD(L) AND90041 In the later section illustrates the internal structure of the module in more detail. The detail functional descriptions are provided in Table 2. Table 2. PIN DESCRIPTION Pin No. Name Description 1 P Positive DC Link Input 2 W Output for W Phase 3 V Output for V Phase 4 U Output for U Phase 5 NW Negative DC Link Input for W Phase 6 NV Negative DC Link Input for V Phase 7 NU Negative DC Link Input for U Phase 8 RTH Series Resistor for Thermistor (Temperature Detection) 9 VTH Thermistor Bias Voltage 10 VDD(L) Low−Side Bias Voltage for IC and IGBT Driving 11 COM(L) Low−Side Common Supply Ground 12 IN(UL) Signal Input for Low−Side U Phase 13 IN(VL) Signal Input for Low−Side V Phase 14 IN(WL) Signal Input for Low−Side W Phase 15 VFO Fault Output 16 CFOD Capacitor for Fault Output Duration Selection 17 CSC Capacitor (Low−Pass Filter) for Short−Circuit Current Detection Input 18 RSC Resistor for Short−Circuit Current Detection 19 IN(UH) High−Side Common Supply Ground 20 COM(H) No Connection 21 VDD(UH) High−Side Bias Voltage for U Phase IGBT Driving 22 VBD(U) Anode of Bootstrap Diode for High−Side U Phase 23 VB(U) High−Side Bias Voltage for U Phase IGBT Driving 24 VS(U) High−Side Bias Voltage Ground for U Phase IGBT Driving 25 IN(VH) Signal Input for High−Side V Phase 26 VDD(VH) High−Side Bias Voltage for V Phase IC 27 VBD(V) Anode of Bootstrap Diode for High−Side V Phase 28 VB(V) High−Side Bias Voltage for V Phase IGBT Driving 29 VS(V) High−Side Bias Voltage Ground for V Phase IGBT Driving 30 IN(WH) Signal Input for High−Side W Phase 31 VDD(WH) High−Side Bias Voltage for W Phase IC 32 VBD(W) Anode of Bootstrap Diode for High−Side W Phase 33 VB(W) High−Side Bias Voltage for W Phase IGBT Driving 34 VS(W) High−Side Bias Voltage Ground for W Phase IGBT Driving www.onsemi.com 4 AND90041 Detailed Pin Definition and Notification Pin: RSC • Pins: VB(U)−VS(U), VB(V)−VS(V), VB(W)−VS(W) Resistor Connection Pin for Short−Circuit Current • High−side bias voltage pins for driving the IGBT / Detection.
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