EEPROM Product Outline

Renesas EEPROM Product Outline

August 2, 2021

Standard Products Department 2 Standard Products Business Division, IoT & Infrastructure Business Unit, Renesas Electronics Corporation

EEPROM-2021-E-0802-1

SRAM Asynchronous Low Power SRAM Volatile memory Static SRAM Random Fast SRAM RAM Access Random Memory  Memory contents are lost Access Synchronous PBSRAM Pipeline Burst SRAM Memory after power off. DRAM SRAM ZBT type (NoBL, NtRAM)  Possible to construct a non-volatile Dynamic Zero Bus Turnaround SRAM memory with use of batteries. Random Access DDR (Double Data Rate) SRAM Memory QDR (Quad Data Rate) SRAM

Mask ROM Programmable ROM Non-volatile memory EPROM Erasable Programmable ROM

 Memory contents are maintained ROM EEPROM Serial EEPROM even after power off. Read Electrically Erasable  Limited number of write cycles Only Programmable ROM for electrically rewritable products Memory Flash Memory

 “One-Renesas” provides optimum memory solutions to various application fields. Types of Memory Products Offered by  (5V, 3V) 256Kb, 1Mb, 4Mb Asynchronous Low Power SRAM  (3V) 2Mb, 8Mb, 16Mb, 32Mb, 64Mb  (5V, 3.3V) 4Mb Asynchronous Fast SRAM  (5V), 16Kb, 64Kb  (5V, 3.3V) 256Kb, 1Mb  (3.3V) 4Mb  Pipeline Burst / Flow-through 1Mb, 2Mb (x32), 4Mb, 9Mb (x18, x36) Synchronous SRAM  Zero Bus Turnaround (ZBT) 4Mb, 9Mb, 18Mb (x18,x36)  Multi-port Memory Specialty Memory  FIFO MRAM  Q-SPI (up to 108MHz): 4Mb, 8Mb, 16Mb

Covered by  Serial I/F: I2C / SPI, 1.8 ~ 5.5V This EEPROM 2Kb, 4Kb, 8Kb, 16Kb, 32Kb, Material 64Kb, 128Kb, 256Kb, 512Kb

1. High reliability by MONOS technology  More than 30 years of production, from 3um-process to date  Distinguished Erase/Write endurance

2. Stable supply and long-term support * Contact us for the applicable part names.  PLP (Product Longevity Program) Applicable*

3. Wide variety of product lineup  Serial EEPROM : 2Kb to 512Kb for both I2C and SPI

Metal （） sponge Oxide （Water balloon） Control Gate Control Gate Charge Nitride (Si3N4) Charge accumulation model Oxide accumulation model Floating Gate Semiconductor Tunnel Oxide Source ------Drain Source - - - Drain Si Si

Put in and out the charge by whole Put in and out the charge by partial (local) interface of Tunnel oxide film interface of Tunnel oxide film

Keeps the charge in dielectric (non-conducting) film Keeps the charge in conducting film (poly Si) -> Even if a defective weak spot occurs in the -> A local defect of the tunnel oxide can lead to tunnel oxide, loss of the charge is locally limited. entire loss of the charge. -> Easy to keep the high reliability -> Difficult to keep the reliability All the charge Charge loss is lost through -> No need for ECC circuit is locally limited -> Needs ECC circuit for large density the defect

Automotive Consumer accessories Industry

Car navigation Office Factory Energy Communication POS Healthcare Consumer Air conditioner automation Game control panel automation system infrastructure system equipment electronics Power window apparatus

512Kb

256Kb

128Kb

64Kb

32Kb

16Kb

8Kb

4Kb

2Kb Car Audio Car Power window Power conditioner Air panel control navigation Car meter Smart Inverter Sequencer Surveillance camera TV/Monitor Movie Audio Digital Camera module Camera cellular) (for Printer/ Copy Machine Cordless Telephone composition Body scale Pedometer conditioner Air Cleaner/ Refrigerator Microwave Automotive Industry Digital Communication Health Home Consumer /OA / Network care appliance

© 2021 Renesas Electronics Corporation. All rights reserved. Page 7 Serial EEPROM Lineup (I2C) Package Page Write Clock Operating Operating Erase/Write Interface Density Part name (pinout) Size time frequency voltage temperature endurance (cycle) R1EX24002ASAS0I SOP (8) 2Kb 16Byte R1EX24002ATAS0I TSSOP (8) R1EX24004ASAS0I SOP (8) 4Kb 16Byte R1EX24004ATAS0I TSSOP (8) R1EX24008ASAS0I SOP (8) 8Kb 16Byte R1EX24008ATAS0I TSSOP (8) 1,000K (25°C) 5ms 400KHz 1.8V to 5.5V -40 to 85 °C R1EX24016ASAS0I SOP (8) 100K (85°C) 16Kb 16Byte R1EX24016ATAS0I TSSOP (8) R1EX24032ASAS0I SOP (8) I2C 32Kb 32Byte R1EX24032ATAS0I TSSOP (8) R1EX24064ASAS0I SOP (8) 64Kb 32Byte R1EX24064ATAS0I TSSOP (8) R1EX24128BSAS0I SOP (8) 128Kb 64Byte R1EX24128BTAS0I TSSOP (8) 5ms 400KHz 1.8V to 5.5V R1EX24256BSAS0I SOP (8) 256Kb 64Byte -40 to 85 °C 1,000K R1EX24256BTAS0I TSSOP (8)

R1EX24512BSAS0I SOP (8) 1MHz (2.5V to 5.5V) 512Kb 128Byte 5ms 1.8V to 5.5V R1EX24512BTAS0I TSSOP (8) 400KHz (1.8V to 5.5V)

© 2021 Renesas Electronics Corporation. All rights reserved. Page 8 Serial EEPROM Lineup (SPI) Package Page Write Clock Operating Operating Erase/Write Interface Density Part name (pinout) Size time frequency voltage temperature endurance (cycle) R1EX25002ASA00I SOP (8) 2Kb 16Byte R1EX25002ATA00I TSSOP (8) R1EX25004ASA00I SOP (8) 4Kb 16Byte R1EX25004ATA00I TSSOP (8) R1EX25008ASA00I SOP (8) 8Kb 32Byte R1EX25008ATA00I TSSOP (8) R1EX25016ASA00I SOP (8) 16Kb 32Byte R1EX25016ATA00I TSSOP (8) 5MHz (2.5V to 5.5V) 1,000K (25°C) SPI 5ms 1.8V to 5.5V -40 to 85 °C R1EX25032ASA00I SOP (8) 3MHz (1.8V to 5.5V) 100K (85°C) 32Kb 32Byte R1EX25032ATA00I TSSOP (8) R1EX25064ASA00I SOP (8) 64Kb 32Byte R1EX25064ATA00I TSSOP (8) 128Kb HN58X25128FPIAG SOP (8) 64Byte 256Kb HN58X25256FPIAG SOP (8) 64Byte R1EX25512ASA00I SOP (8) 512Kb 128Byte R1EX25512ATA00I TSSOP (8)

© 2021 Renesas Electronics Corporation. All rights reserved. Page 9 Serial EEPROM Part Name R1E X 24 064 A SA S0 I #U0 #U0 ：Embossed tape(Pb free・Halogen free) ：・ Renesas EEPROM #K0 Embossed tape(Pb free Halogen free) #S0 ：Embossed tape(Pb free) Embossed tape size (pcs/reel) SOP-8pin TSSOP-8pin U0 2,500 3,000 K0 4,000 5,000 Operating Voltage S0 2,500 3,000 X : 1.8 to 5.5V V : 2.5 to 5.5V Operating Temperature I : Industrial (-40 to 85 deg.C )

Interface Function 24 : I2C I2C : S0 25 : SPI SPI : 00

Memory density Package type 002 : ～ 2Kbit SA : SOP-8pin TA : TSSOP-8pin 064 : ～ 64Kbit Generation 512 : 512Kbit A : A mask B : B mask