DOCSLIB.ORG

EEPROM Product Outline

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
EEPROM Product Outline Renesas EEPROM Product Outline August 2, 2021 Standard Products Department 2 Standard Products Business Division, IoT & Infrastructure Business Unit, Renesas Electronics Corporation EEPROM-2021-E-0802-1 © 2021 Renesas Electronics Corporation. All rights reserved. Types of Standard Memory Supported by “Standard Products Department 2” ( not includes Specialty Memory and MRAM ) SRAM Asynchronous Low Power SRAM Volatile memory Static SRAM Random Fast SRAM RAM Access Random Memory Memory contents are lost Access Synchronous PBSRAM Pipeline Burst SRAM Memory after power off. DRAM SRAM ZBT type (NoBL, NtRAM) Possible to construct a non-volatile Dynamic Zero Bus Turnaround SRAM memory with use of batteries. Random Access DDR (Double Data Rate) SRAM Memory QDR (Quad Data Rate) SRAM Mask ROM Programmable ROM Non-volatile memory EPROM Erasable Programmable ROM Memory contents are maintained ROM EEPROM Serial EEPROM even after power off. Read Electrically Erasable Limited number of write cycles Only Programmable ROM for electrically rewritable products Memory Flash Memory © 2021 Renesas Electronics Corporation. All rights reserved. Page 2 Memory Products Portfolio “One-Renesas” provides optimum memory solutions to various application fields. Types of Memory Products Offered by (5V, 3V) 256Kb, 1Mb, 4Mb Asynchronous Low Power SRAM (3V) 2Mb, 8Mb, 16Mb, 32Mb, 64Mb (5V, 3.3V) 4Mb Asynchronous Fast SRAM (5V), 16Kb, 64Kb (5V, 3.3V) 256Kb, 1Mb (3.3V) 4Mb Pipeline Burst / Flow-through 1Mb, 2Mb (x32), 4Mb, 9Mb (x18, x36) Synchronous SRAM Zero Bus Turnaround (ZBT) 4Mb, 9Mb, 18Mb (x18,x36) Multi-port Memory Specialty Memory FIFO MRAM Q-SPI (up to 108MHz): 4Mb, 8Mb, 16Mb Covered by Serial I/F: I2C / SPI, 1.8 ~ 5.5V This EEPROM 2Kb, 4Kb, 8Kb, 16Kb, 32Kb, Material 64Kb, 128Kb, 256Kb, 512Kb © 2021 Renesas Electronics Corporation. All rights reserved. Page 3 Advantages: Renesas EEPROM 1. High reliability by MONOS technology More than 30 years of production, from 3um-process to date Distinguished Erase/Write endurance 2. Stable supply and long-term support * Contact us for the applicable part names. PLP (Product Longevity Program) Applicable* 3. Wide variety of product lineup Serial EEPROM : 2Kb to 512Kb for both I2C and SPI © 2021 Renesas Electronics Corporation. All rights reserved. Page 4 High Reliability of MONOS type MONOS type FLOTOX Type ( Renesas) (Competitors) Metal （ ） sponge Oxide （Water balloon） Control Gate Control Gate Charge Nitride (Si3N4) Charge accumulation model Oxide accumulation model Floating Gate Semiconductor Tunnel Oxide Source - - - - - - Drain Source - - - Drain Si Si Put in and out the charge by whole Put in and out the charge by partial (local) interface of Tunnel oxide film interface of Tunnel oxide film Keeps the charge in dielectric (non-conducting) film Keeps the charge in conducting film (poly Si) -> Even if a defective weak spot occurs in the -> A local defect of the tunnel oxide can lead to tunnel oxide, loss of the charge is locally limited. entire loss of the charge. -> Easy to keep the high reliability -> Difficult to keep the reliability All the charge Charge loss is lost through -> No need for ECC circuit is locally limited -> Needs ECC circuit for large density the defect © 2021 Renesas Electronics Corporation. All rights reserved. Page 5 EEPROM Applications Automotive Consumer accessories Industry Car navigation Office Factory Energy Communication POS Healthcare Consumer Air conditioner automation Game control panel automation system infrastructure system equipment electronics Power window apparatus © 2021 Renesas Electronics Corporation. All rights reserved. Page 6 © 2021 Renesas Electronics Corporation. All rights reserved. All reserved. rights Corporation. Electronics © 2021 Renesas Track Records of Renesas EEPROM of Renesas Records Track 128Kb 256Kb 512Kb 16Kb 32Kb 64Kb 2Kb 4Kb 8Kb Automotive Power window Air conditioner control panel Car navigation Car Audio Smart meter Industry Inverter Sequencer Surveillance camera Consumer Digital TV/Monitor Movie Page Page 7 Audio Digital Camera /OA / /OA Network Communication Camera module (for cellular) Printer/ Copy Machine Cordless Telephone Health Health Body composition care scale Pedometer appliance Air conditioner Home by application/density Use case Cleaner/ Refrigerator Microwave Serial EEPROM Lineup (I2C) Package Page Write Clock Operating Operating Erase/Write Interface Density Part name (pinout) Size time frequency voltage temperature endurance (cycle) R1EX24002ASAS0I SOP (8) 2Kb 16Byte R1EX24002ATAS0I TSSOP (8) R1EX24004ASAS0I SOP (8) 4Kb 16Byte R1EX24004ATAS0I TSSOP (8) R1EX24008ASAS0I SOP (8) 8Kb 16Byte R1EX24008ATAS0I TSSOP (8) 1,000K (25°C) 5ms 400KHz 1.8V to 5.5V -40 to 85 °C R1EX24016ASAS0I SOP (8) 100K (85°C) 16Kb 16Byte R1EX24016ATAS0I TSSOP (8) R1EX24032ASAS0I SOP (8) I2C 32Kb 32Byte R1EX24032ATAS0I TSSOP (8) R1EX24064ASAS0I SOP (8) 64Kb 32Byte R1EX24064ATAS0I TSSOP (8) R1EX24128BSAS0I SOP (8) 128Kb 64Byte R1EX24128BTAS0I TSSOP (8) 5ms 400KHz 1.8V to 5.5V R1EX24256BSAS0I SOP (8) 256Kb 64Byte -40 to 85 °C 1,000K R1EX24256BTAS0I TSSOP (8) R1EX24512BSAS0I SOP (8) 1MHz (2.5V to 5.5V) 512Kb 128Byte 5ms 1.8V to 5.5V R1EX24512BTAS0I TSSOP (8) 400KHz (1.8V to 5.5V) © 2021 Renesas Electronics Corporation. All rights reserved. Page 8 Serial EEPROM Lineup (SPI) Package Page Write Clock Operating Operating Erase/Write Interface Density Part name (pinout) Size time frequency voltage temperature endurance (cycle) R1EX25002ASA00I SOP (8) 2Kb 16Byte R1EX25002ATA00I TSSOP (8) R1EX25004ASA00I SOP (8) 4Kb 16Byte R1EX25004ATA00I TSSOP (8) R1EX25008ASA00I SOP (8) 8Kb 32Byte R1EX25008ATA00I TSSOP (8) R1EX25016ASA00I SOP (8) 16Kb 32Byte R1EX25016ATA00I TSSOP (8) 5MHz (2.5V to 5.5V) 1,000K (25°C) SPI 5ms 1.8V to 5.5V -40 to 85 °C R1EX25032ASA00I SOP (8) 3MHz (1.8V to 5.5V) 100K (85°C) 32Kb 32Byte R1EX25032ATA00I TSSOP (8) R1EX25064ASA00I SOP (8) 64Kb 32Byte R1EX25064ATA00I TSSOP (8) 128Kb HN58X25128FPIAG SOP (8) 64Byte 256Kb HN58X25256FPIAG SOP (8) 64Byte R1EX25512ASA00I SOP (8) 512Kb 128Byte R1EX25512ATA00I TSSOP (8) © 2021 Renesas Electronics Corporation. All rights reserved. Page 9 Serial EEPROM Part Name R1E X 24 064 A SA S0 I #U0 #U0 ：Embossed tape(Pb free・Halogen free) ： ・ Renesas EEPROM #K0 Embossed tape(Pb free Halogen free) #S0 ：Embossed tape(Pb free) Embossed tape size (pcs/reel) SOP-8pin TSSOP-8pin U0 2,500 3,000 K0 4,000 5,000 Operating Voltage S0 2,500 3,000 X : 1.8 to 5.5V V : 2.5 to 5.5V Operating Temperature I : Industrial (-40 to 85 deg.C ) Interface Function 24 : I2C I2C : S0 25 : SPI SPI : 00 Memory density Package type 002 : ～ 2Kbit SA : SOP-8pin TA : TSSOP-8pin 064 : ～ 64Kbit Generation 512 : 512Kbit A : A mask B : B mask © 2021 Renesas Electronics Corporation. All rights reserved. Page 10 Renesas.com © 2021 Renesas Electronics Corporation. All rights reserved. .
Load more

Recommended publications
  • Error Detection and Correction Methods for Memories Used in System-On-Chip Designs
    International Journal of Engineering and Advanced Technology (IJEAT) ISSN: 2249 – 8958, Volume-8, Issue-2S2, January 2019 Error Detection and Correction Methods for Memories used in System-on-Chip Designs Gunduru Swathi Lakshmi, Neelima K, C. Subhas ABSTRACT— Memory is the basic necessity in any SoC Static Random Access Memory (SRAM): It design. Memories are classified into single port memory and consists of a latch or flipflop to store each bit of multiport memory. Multiport memory has ability to source more memory and it does not required any refresh efficient execution of operation and high speed performance operation. SRAM is mostly used in cache memory when compared to single port. Testing of semiconductor memories is increasing because of high density of current in the and in hand-held devices. It has advantages like chips. Due to increase in embedded on chip memory and memory high speed and low power consumption. It has density, the number of faults grow exponentially. Error detection drawback like complex structure and expensive. works on concept of redundancy where extra bits are added for So, it is not used for high capacity applications. original data to detect the error bits. Error correction is done in Read Only Memory (ROM): It is a non-volatile memory. two forms: one is receiver itself corrects the data and other is It can only access data but cannot modify data. It is of low receiver sends the error bits to sender through feedback. Error detection and correction can be done in two ways. One is Single cost. Some applications of ROM are scanners, ID cards, Fax bit and other is multiple bit.
    [Show full text]
  • Semiconductor Memories
    Semiconductor Memories Prof. MacDonald Types of Memories! l" Volatile Memories –" require power supply to retain information –" dynamic memories l" use charge to store information and require refreshing –" static memories l" use feedback (latch) to store information – no refresh required l" Non-Volatile Memories –" ROM (Mask) –" EEPROM –" FLASH – NAND or NOR –" MRAM Memory Hierarchy! 100pS RF 100’s of bytes L1 1nS SRAM 10’s of Kbytes 10nS L2 100’s of Kbytes SRAM L3 100’s of 100nS DRAM Mbytes 1us Disks / Flash Gbytes Memory Hierarchy! l" Large memories are slow l" Fast memories are small l" Memory hierarchy gives us illusion of large memory space with speed of small memory. –" temporal locality –" spatial locality Register Files ! l" Fastest and most robust memory array l" Largest bit cell size l" Basically an array of large latches l" No sense amps – bits provide full rail data out l" Often multi-ported (i.e. 8 read ports, 2 write ports) l" Often used with ALUs in the CPU as source/destination l" Typically less than 10,000 bits –" 32 32-bit fixed point registers –" 32 60-bit floating point registers SRAM! l" Same process as logic so often combined on one die l" Smaller bit cell than register file – more dense but slower l" Uses sense amp to detect small bit cell output l" Fastest for reads and writes after register file l" Large per bit area costs –" six transistors (single port), eight transistors (dual port) l" L1 and L2 Cache on CPU is always SRAM l" On-chip Buffers – (Ethernet buffer, LCD buffer) l" Typical sizes 16k by 32 Static Memory
    [Show full text]
  • Via-Programmable Read-Only Memory Design for Full Code Coverage Using a Dynamic Bit-Line Shielding Technique
    Via-Programmable Read-Only Memory Design for Full Code Coverage Using A Dynamic Bit-Line Shielding Technique Meng-Fan Chang1, 2, Ding-Ming Kwai2, and Kuei-Ann Wen1 1 Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 2 Intellectual Property Library Company, Hsinchu, Taiwan [email protected] Abstract 0-cell 1-cell 0-cell Crosstalk between bit lines leads to read-1 failure Metal-3 (BL) in a high-speed via-programmable read only memory (ROM) and limits the coverage of applicable code Via-2 (Code) patterns. Due to the fluctuations in bit-line intrinsic Metal-2 and coupling capacitances, the amount of noise coupled to a selected bit line may vary, resulting in the Via-1 reduction of sensing margin. In this paper, we propose a dynamic bit-line shielding (DBS) technique, suitable Metal-1 to be implemented in compliable ROM, to eliminate the Contact crosstalk-induced read failure and to achieve full code coverage. Experiments of the 256Kb instances with Diffusion Diffusion Diffusion and without the DBS circuit were undertaken using STI STI STI STI 0.25µm and 0.18µm standard CMOS processes. The test results demonstrate the read-1 failures and Fig. 1. Cross-sectional view of ROM array with via-2 confirm that the DBS technique can remove them codes and metal-3 bit lines. successfully, allowing the ROM to operate under a wide range of supply voltage. sectional view of the memory array with via-2 codes 1. Introduction and metal-3 bit lines. This leads to more severe bit-line crosstalk, since the contact and via at the lower levels Mask-programmable read-only memory (ROM) must be stacked and the metal islands for them to land macros are commonly embedded into system-on-chip upon contribute considerable side-wall capacitances to (SoC) designs today.
    [Show full text]
  • Refresh Operation and Semi-Conductor Rom Memories
    REFRESH OPERATION AND SEMI-CONDUCTOR ROM MEMORIES The Refresh control block periodically generates Refresh, requests, causing the access control block to start a memory cycle in the normal way. This block allows the refresh operation by activating the Refresh Grant line. The access control block arbitrates between Memory Access requests and Refresh requests, with priority to Refresh requests in the case of a tie to ensure the integrity of the stored data. As soon as the Refresh control block receives the Refresh Grant signal, it activates the Refresh line. This causes the address multiplexer to select the Refresh counter as the source and its contents are thus loaded into the row address latches of all memory chips when the RAS signal is activated. During this time the R/ W line may be low, causing an inadvertent write operation. One way to prevent this is to use the Refresh line to control the decoder block to deactivate all the chip select lines. The rest of the refresh cycle is the same as in a normal cycle. At the end, the Refresh control block increments the refresh counter in preparation for the next Refresh cycle. Even though the row address has 8 bits, the Refresh counter need only be 7 bits wide because of the cell organization inside the memory chips. In a 64k x 1 memory chip, the 256x256 cell array actually consists of two 128x256 arrays. The low order 7 bits of the row address select a row from both arrays and thus the row from both arrays is refreshed! Ideally, the refresh operation should be transparent to the CPU.
    [Show full text]
  • Arduino Nano
    Arduino Nano Arduino Nano Front Arduino Nano Rear Overview The Arduino Nano is a small, complete, and breadboard-friendly board based on the ATmega328 (Arduino Nano 3.0) or ATmega168 (Arduino Nano 2.x). It has more or less the same functionality of the Arduino Duemilanove, but in a different package. It lacks only a DC power jack, and works with a Mini-B USB cable instead of a standard one. The Nano was designed and is being produced by Gravitech. Schematic and Design Arduino Nano 3.0 (ATmega328): schematic, Eagle files. Arduino Nano 2.3 (ATmega168): manual (pdf), Eagle files. Note: since the free version of Eagle does not handle more than 2 layers, and this version of the Nano is 4 layers, it is published here unrouted, so users can open and use it in the free version of Eagle. Specifications: Microcontroller Atmel ATmega168 or ATmega328 Operating Voltage (logic 5 V level) Input Voltage 7-12 V (recommended) Input Voltage (limits) 6-20 V Digital I/O Pins 14 (of which 6 provide PWM output) Analog Input Pins 8 DC Current per I/O Pin 40 mA 16 KB (ATmega168) or 32 KB (ATmega328) of which 2 KB used by Flash Memory bootloader SRAM 1 KB (ATmega168) or 2 KB (ATmega328) EEPROM 512 bytes (ATmega168) or 1 KB (ATmega328) Clock Speed 16 MHz Dimensions 0.73" x 1.70" Power: The Arduino Nano can be powered via the Mini-B USB connection, 6-20V unregulated external power supply (pin 30), or 5V regulated external power supply (pin 27).
    [Show full text]
  • Memory Basics
    Memory Basics • RAM: Random Access Memory – historically defined as memory array with individual bit access – refers to memory with both Read and Write capabilities • ROM : Read Only Memory – no capabilities for “online” memory Write operations – Write typically requires high volt ages or erasing by UV light • Volatility of Memory – volatile memory loses data over time or when power is removed • RAM is volatile – non-volatile memory stores data even when power is removed • ROM is non-volatile • Static vs. Dynamic Memory – Static: holds data as long as power is applied (SRAM) – Dynamic: must be refreshed periodically (DRAM) ECE 410, Prof. A. Mason/Prof. F. Salem Lecture Notes 13.1 SRAM Basics • SRAM = Static Random Access Memory – Static: holds data as long as power is applied – Volatile: can not hold data if power is removed • Operation States – 3 states (modes) • hold • write WL • read • Basic 6T (transistor) SRAM Cell – bistable (cross-coupled) INVs for storage – access transistors MAL & MAR MAL MAR • access to stored data for read and write – word line, WL, controls access bit bit • WL = 0, hold operation • WL = 1, read or write operation ECE 410, Prof. A. Mason/Prof. F. Salem Lecture Notes 13.2 SRAM Operations • Hold – word line = 0, access transistors are OFF – data held in latch • Write WL – word line = 1, access tx are ON – new data (voltage) applied to bit and bit_bar – data in latch overwritten with new value MAL MAR • Read bit bit – word line = 1, access tx are ON – bit and bit_bar read by a sense amplifier • Sense Amplifier – basically a simple differential (transconductance) amplifier – comparing the difference between bit and bit_bar • if bit > bit_bar, output is 1 • if bit < bit_bar, output is 0 • allows output to be set quickly without fully charging/discharging bit line ECE 410, Prof.
    [Show full text]
  • 17. Semiconductor Memories
    17. Semiconductor Memories Institute of Microelectronic Systems Overview •Introduction • Read Only Memory (ROM) • Nonvolatile Read/Write Memory (RWM) • Static Random Access Memory (SRAM) • Dynamic Random Access Memory (DRAM) •Summary Institute of Microelectronic 17: Semiconductor Memories Systems 2 Semiconductor Memory Classification Non-Volatile Memory Volatile Memory Read Only Memory Read/Write Memory Read/Write Memory (ROM) (RWM) Random Non-Random Mask-Programmable EPROM Access Access ROM E2PROM SRAM FIFO Programmable ROM FLASH DRAM LIFO Shift Register EPROM - Erasable Programmable ROM SRAM - Static Random Access Memory E2PROM - Electrically Erasable DRAM - Dynamic Random Access Memory Programmable ROM FIFO - First-In First-Out LIFO - Last-In First-Out Institute of Microelectronic 17: Semiconductor Memories Systems 3 Random Access Memory Array Organization Memory array • Memory storage cells • Address decoders Each memory cell • stores one bit of binary information (”0“ or ”1“ logic) • shares common connections with other cells: rows, columns Institute of Microelectronic 17: Semiconductor Memories Systems 4 Read Only Memory - ROM • Simple combinatorial Boolean network which produces a specific output for each input combination (address) • ”1“ bit stored - absence of an active transistor • ”0“ bit stored - presence of an active transistor • Organized in arrays of 2N words • Typical applications: • store the microcoded instructions set of a microprocessor • store a portion of the operation system for PCs • store the fixed programs for
    [Show full text]
  • Semiconductor Memories
    SEMICONDUCTOR MEMORIES Digital Integrated Circuits Memory © Prentice Hall 1995 Chapter Overview • Memory Classification • Memory Architectures • The Memory Core • Periphery • Reliability Digital Integrated Circuits Memory © Prentice Hall 1995 Semiconductor Memory Classification RWM NVRWM ROM Random Non-Random EPROM Mask-Programmed Access Access 2 E PROM Programmable (PROM) SRAM FIFO FLASH DRAM LIFO Shift Register CAM Digital Integrated Circuits Memory © Prentice Hall 1995 Memory Architecture: Decoders M bits M bits S S0 0 Word 0 Word 0 S1 Word 1 A0 Word 1 S2 Storage Storage s Word 2 Word 2 d Cell A1 Cell r r o e d W o c N AK-1 e S D N-2 Word N-2 Word N-2 SN_1 Word N-1 Word N-1 Input-Output Input-Output (M bits) (M bits) N words => N select signals Decoder reduces # of select signals Too many select signals K = log2N Digital Integrated Circuits Memory © Prentice Hall 1995 Array-Structured Memory Architecture Problem: ASPECT RATIO or HEIGHT >> WIDTH 2L-K Bit Line Storage Cell AK r e d Word Line AK+1 o c e D AL-1 w o R M.2K Sense Amplifiers / Drivers Amplify swing to rail-to-rail amplitude A 0 Column Decoder Selects appropriate AK-1 word Input-Output (M bits) Digital Integrated Circuits Memory © Prentice Hall 1995 Hierarchical Memory Architecture Row Address Column Address Block Address Global Data Bus Control Block Selector Global Circuitry Amplifier/Driver I/O Advantages: 1. Shorter wires within blocks 2. Block address activates only 1 block => power savings Digital Integrated Circuits Memory © Prentice Hall 1995 Memory Timing: Definitions
    [Show full text]
  • Lecture 23. Read-Only Memories & Programmable Logic Arrays
    EE 280 Introduction to Digital Logic Design Lecture 23. Read-Only Memories & Programmable Logic Arrays EE280 Lecture 23 23 - 1 Read-Only Memories Memory is like an array of mailboxes (registries of binary data) A stored array of binary data which can be read only, but not changed In general, 2n × m ROM ≡ I/P lines ≡ O/P lines ≡ words* each bits long For each combination of inputs on the n input lines, the corresponding pattern of 0’s and 1’s (a word) is generated on the m output lines - typical sizes range from (32 words x 4 bits) to (512K words x 8 bits) or larger EE280 Lecture 23 23 - 2 1 ROM Realization of Logic Functions A B C F0 F1 F2 F3 0 0 0 A ROM 0 0 1 B 8 words 0 1 0 C x 4 bits 0 1 1 1 0 0 1 0 1 F F F F 1 1 0 0 1 2 3 1 1 1 a. Block diagram b. Truth table for ROM F0 = = A'B' + AC‘ F1 = = B + AC‘ F2 = = A'B' + BC‘ F3 = = AC + B EE280 Lecture 23 23 - 3 ROM Realization of Logic Functions ROM consists of a decoder and a memory array. When a particular input sequence is applied to the n decoder inputs, exactly one of the 2n outputs is set to 1. This output line selects one of the words in the memory array. decoder outputs mi are consecutive minterms ROM outputs Fi are generated by ORing selected minterms Switching elements pass 1 to output, otherwise resistors at the top set output to 0 EE280 Lecture 23 23 - 4 2 Code Conversion Network using ROM The ROM realizes conversion between BDC (8421) code and Excess-3 code Decimal Input Output digit ABCD W X Y Z 0 0000 0 0 1 1 A W 1 0001 0 1 0 0 B X 2 0010 0 1 0 1 ROM C Y 3 0011 0 1 1 0 4 0100
    [Show full text]
  • Introduction to Advanced Semiconductor Memories
    CHAPTER 1 INTRODUCTION TO ADVANCED SEMICONDUCTOR MEMORIES 1.1. SEMICONDUCTOR MEMORIES OVERVIEW The goal of Advanced Semiconductor Memories is to complement the material already covered in Semiconductor Memories. The earlier book covered the fol- lowing topics: random access memory technologies (SRAMs and DRAMs) and their application to specific architectures; nonvolatile technologies such as the read-only memories (ROMs), programmable read-only memories (PROMs), and erasable PROMs in both ultraviolet erasable (UVPROM) and electrically erasable (EEPROM) versions; memory fault modeling and testing; memory design for testability and fault tolerance; semiconductor memory reliability; semiconductor memories radiation effects; advanced memory technologies; and high-density memory packaging technologies [1]. This section provides a general overview of the semiconductor memories topics that are covered in Semiconductor Memories. In the last three decades of semiconductor memories' phenomenal growth, the DRAMs have been the largest volume volatile memory produced for use as main computer memories because of their high density and low cost per bit advantage. SRAM densities have generally lagged a generation behind the DRAM. However, the SRAMs offer low-power consumption and high-per- formance features, which makes them practical alternatives to the DRAMs. Nowadays, a vast majority of SRAMs are being fabricated in the NMOS and CMOS technologies (and a combination of two technologies, also referred to as the mixed-MOS) for commodity SRAMs. 1 2 INTRODUCTION TO ADVANCED SEMICONDUCTOR MEMORIES MOS Memory Market ($M) Non-Memory IC Market ($M) Memory % of Total IC Market 300,000 40% 250,000 30% 200,00U "o Q 15 150,000 20% 2 </> a. o 100,000 2 10% 50,000 0 0% 96 97 98 99 00 01* 02* 03* 04* 05* MOS Memory Market ($M) 36,019 29,335 22,994 32,288 49,112 51,646 56,541 70,958 94,541 132,007 Non-Memory IC Market ($M) 78,923 90,198 86,078 97,930 126,551 135,969 148,512 172,396 207,430 262,172 Memory % of Total IC Market 31% .
    [Show full text]
  • A New Embedded Measurement Structure for Edram Capacitor
    A New Embedded M easurement Structure for eDRAM Capacitor 1:22.2ope. 1J.M. Portal 2D.1ée 1 L2M,-,olytech-.MR CNRS 0131 2 ST-Microelectronics 2MT - Technop3le de Ch4teau 5ombert 62 de Rousset 7, 2 F-13851 Marseille, France F-13100 Rousset, France portal; polytech.univ-mrs.fr didier.nee; st.com Tel:(33)-891-058-181 Tel:(33)-882-088-815 Abstract structure is switch off in the standard operation mode and the plate polari.ation is fixed to /DD02 using the STD The embedded DRAM (eDRAM) is more and more used in transistor. During the test mode, the STD transistor is System On Chip (SOC). The integration of the DRAM switched off. The Select transistors allow the memory capacito r process into a logic process is challenging to array to connect each bit line to the bit line input named get sati sfactory yields. The specific process of DRAM I1B2i. These transistors are named SB2i. capacitor and the lo capacitance value ("30fF) of this eDRAM Macro cellarray Measurement structure device induce problems of process monitoring and failure / I1B21 I1 DD analysis. We propose a ne test structure to measure the B21 B22 I P7 capacita nce value of each DRAM cell capacitor in a RE-P SB21 SB22 DRAM array. This concept has been validated by O7T 2EC simulati on on a 0.18)m eDRAM technology. I1 W 21 REF C PR5 1. Introduction m -P The major challenge of eDRAM technologies remains STD Plate polari.ation W 2 / 2 DD the significant increase in the fabrication process 2 complex ity with its associated control problems.
    [Show full text]
  • A Study About Non-Volatile Memories
    Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 29 July 2016 doi:10.20944/preprints201607.0093.v1 1 Article 2 A Study about Non‐Volatile Memories 3 Dileep Kumar* 4 Department of Information Media, The University of Suwon, Hwaseong‐Si South Korea ; [email protected] 5 * Correspondence: [email protected] ; Tel.: +82‐31‐229‐8212 6 7 8 Abstract: This paper presents an upcoming nonvolatile memories (NVM) overview. Non‐volatile 9 memory devices are electrically programmable and erasable to store charge in a location within the 10 device and to retain that charge when voltage supply from the device is disconnected. The 11 non‐volatile memory is typically a semiconductor memory comprising thousands of individual 12 transistors configured on a substrate to form a matrix of rows and columns of memory cells. 13 Non‐volatile memories are used in digital computing devices for the storage of data. In this paper 14 we have given introduction including a brief survey on upcoming NVMʹs such as FeRAM, MRAM, 15 CBRAM, PRAM, SONOS, RRAM, Racetrack memory and NRAM. In future Non‐volatile memory 16 may eliminate the need for comparatively slow forms of secondary storage systems, which include 17 hard disks. 18 Keywords: Non‐volatile Memories; NAND Flash Memories; Storage Memories 19 PACS: J0101 20 21 22 1. Introduction 23 Memory is divided into two main parts: volatile and nonvolatile. Volatile memory loses any 24 data when the system is turned off; it requires constant power to remain viable. Most kinds of 25 random access memory (RAM) fall into this category.
    [Show full text]