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NEXT-GENERATION MEMORY MARKET By Technology (Nonvolatile memory (MRAM, FRAM, PCM, & RRAM), Volatile Memory DRAM (T-Ram, T-T-RAM, and others), and SRAM (Z-RAM and others), Application, & Geography GLOBAL FORECAST TO 2020

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Next-Generation Memory Market - Global Forecast to 2020

MarketsandMarkets is a global market research and consulting company based in the U.S. We publish strategically analyzed market research reports and serve as a business intelligence partner to Fortune 500 companies across the world. MarketsandMarkets also provides multi-client reports, company profiles, databases, and custom research services.

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1 INTRODUCTION

1.1 OBJECTIVES OF THE STUDY

 To define, describe, and forecast the global next-generation semiconductor memory solution market on the basis of technology, application, and geography

 To forecast the market size in terms of value for various segments, with regards to four main regions—North America, Europe, Asia-Pacific, and RoW

 To provide detailed information regarding the major factors influencing the growth of the market (drivers, restraints, opportunities, industry-specific challenges, winning imperatives, and burning issues)

 To strategically analyze micromarkets1 with respect to individual growth trends, future prospects, and contribution to the total market

 To analyze the opportunities in the market for stakeholders, by identifying high growth segments of the global next-generation semiconductor memory solution market

 To strategically profile key players and comprehensively analyze their market share and core competencies2 along with detailing the competitive landscape for market leaders

 To track and analyze competitive developments such as joint ventures, mergers & acquisitions, new product developments, and research & development in the global next-generation semiconductor memory solution market

1. Micromarkets are defined as further segments and sub-segments of the global the global next-generation semiconductor memory solution market included in the report. 2. Core competencies of companies are captured in terms of their key developments, SWOT analysis, and key strategies adopted by them to sustain their position in the market.

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1.2 MARKET DEFINITION The definition of the next-generation semiconductor memory solution for this market study is as follows, “next-generation memory technologies are the emerging memory solutions that have been introduced in the market or are currently under development and are expected to penetrate the market in the years to come. This technology presently competes with the traditional memory solutions such as flash, DRAM, and SRAM technologies on the basis of scalability, availability, commercialization, speed, and cost.”

1.3 STUDY SCOPE

1.3.1 MARKETS COVERED The report covers both the demand and supply sides of the market. The supply-side market segmentation includes segmentation by technologies. On the other hand, demand-side segmentation includes various applications and regions. The following diagram gives an overview of micromarkets covered in this report.

FIGURE 1 MARKETS COVERED

Application

Markets … Covered

Geography Technology

Source: Expert Interviews and MarketsandMarkets Analysis

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FIGURE 2 GLOBAL NEXT-GENERATION SEMICONDUCTOR MEMORY SOLUTION MARKET, BY TECHNOLOGY

Nonvolatile

• Memristor or resistive random- Nonvolatile access memory (ReRAM) • Phase-change memory (PCM) • Magnetoresistive random- access memory (MRAM) • Ferroelectric RAM (FeRAM) • Others

Volatile

• Dynamic random-access Volatile memory (DRAM) • Static random-access memory (SRAM)

Source: Expert Interviews and MarketsandMarkets Analysis

Global Next-Generation Semiconductor Memory Solution Market, By Application

 Consumer Electronics

 Mass Storage

 Mobile Phones

 Industrial Applications

 Automotive electronics

 Aerospace and Defense

 Others (Smart Cards and Embedded MCUs)

1.3.2 GEOGRAPHIC SCOPE

 North America

 U.S.

 Canada

 Mexico

 Europe

 Germany

 France

 Italy

 U.K.

 Others (Spain and The Netherlands)

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 APAC

 China

 Japan

 South Korea

 Others (India, Taiwan, and Vietnam)

 RoW

 Middle East

 Africa

 Latin America

1.3.3 YEARS CONSIDERED FOR THE STUDY

 Base year – 2013

 Historical year – 2012

 Forecast period – 2014 to 2020 Note: Whenever/wherever the base year is not known, the year prior to the current year is considered.

1.4 CURRENCY

The base currency used in the report is U.S. dollars, with market size indicated in $MILLION

 For companies which report their revenues in U.S. dollars, the revenues are picked up from their annual report.

 For companies that report their revenues in other currencies, average annual currency exchange rate is used for the particular year to convert the value in U.S. dollars.

1.5 LIMITATIONS

 This global next-generation semiconductor memory solution market report focuses more on the emerging semiconductor commercialized and non-commercialized memory technologies, rather than traditional memory technologies that are still holding the major part of the overall semiconductor market.

 In the application segment, following applications are considered: consumer electronics, mass storage, mobile phones, industrial applications, automotive electronics, and aerospace & defense.

1.6 STAKEHOLDERS

The intended audience for this report includes:

 Mobile OEMs

 Smartphone suppliers

 Laptop/PC suppliers and OEMs

 Memory card manufacturers

 Original equipment manufacturers (tablet, television, digital camera, flash drive, etc.)

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 System integrators

 Raw material suppliers for the semiconductor industry

 Consultants concerned with consumer durables

 Research institutes

 Government institution

 Military equipment suppliers

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2 EXECUTIVE SUMMARY

The total next-generation memory solution market is expected to reach $XX million by 2020, at a CAGR of XX% between 2014 and 2020. This report covers the key applications of the next-generation memory solution market, including the consumer electronics, aerospace & defense, industrial & automotive, mass storage, mobile phones, and others. There has been increasing demand for high density, high speed and low power memory devices in the mass storage applications. So mass storage application is expected to be the largest contributor to the overall next-generation memory solution market, holding a ~XX% share of the market. It is expected to reach $XX million by 2020 at a CAGR of XX% between 2014 and 2020. Backed by increasing consumption of mobile devices such as smart phones, the mobile phone application is estimated to have the highest growth potential and is expected to reach $XX million by 2020, at CAGR of XX% between 2014 and 2020. On the other hand, smaller application sectors such as aerospace & defence accounted for ~XX% of the next-generation memory solution market share in 2013.

Several new memory technologies are in various stages of commercial development. Emerging memories are expected to replace most of the conventional memory technologies like flash memory. The overall next- generation memory solution market is divided into volatile and nonvolatile memory technologies. Due to its larger scope of applications, the nonvolatile next-generation memory technology presently holds the major share in the overall memory market of about ~XX% and is expected to grow at a CAGR of XX% between 2014 and 2020. Among the emerging nonvolatile memory technologies covered in this report, MRAM was found to be most widely used technology in 2013 due to its advantages like simpler technology and capability of storing information without having continuous electrical current. The MRAM memory technology assures a high capacity; it also improves memory solutions for high end consumer electronics devices. This technology accounted for the major share of XX% ($XX million) in 2013.

Volatile memory comprises SRAM and DRAM. DRAMs have the highest production volume among all the VLSI semiconductor products, and the DRAM market is one of the most competitive and mature markets in the semiconductor industry. The market for next-generation volatile memory technology is very small as the emerging memory technology based on either SRAM or DRAM is under development and not commercialized completely.

The exponentially increasing demand for an enriched end user experience and increased performance in next- generation mainstream computing applications is rendering these memory technologies obsolete. The PCM technology is expected to reach to $XX million by 2020 with the highest CAGR of XX% between 2014 and 2020. The major reason for the growth of the PCM technology is its increasing application in mobile and other consumer electronics sector. The MRAM technology is well commercialized, serving a wide range of computer, consumer, industrial, automotive & aerospace applications.

Over the last two decades, memory has become an important parameter in any products. Rapidly evolving technology, continuous cutback in process, increasing competition, and a fast move towards nanotechnology characterize the worldwide semiconductor memory market. Chip sizes are shrinking and memory content and applications are increasing. This has resulted in tremendous growth in the field of memory market. This gives rise to the latest memory technologies, which are likely to replace traditional memory technologies. The chronological development of the memory technology is shown below:

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FIGURE 3 ROADMAP FOR THE MEMORY TECHNOLOGY

NAND Flash & Next Generation Memories FeRAM with Higher Storage Capacity RRAM • NAND Flash – 1 Gb • NAND Flash – 128 Gb • FeRAM – 128 Mb • FeRAM – 10 Mb • Initial storage • MRAM – 64 Mb PRAM capacity – 2 Mb • PRAM – 8 Gb MRAM • Initial storage • RRAM – 32 Gb capacity – 10 Mb • Initial storage & 100 Mb capacity – 1 Mb • Storage capacity – 10 Mb

Early Mid 2000s Late 2000s and Beyond 2000s

Source: Press Releases, Technical Presentations, Industry Journals, and MarketsandMarkets Analysis

FIGURE 4 MOBILE PHONE APPLICATION SEGMENT IN NEXT GENERATION MEMORY MARKET TO GROW AT ABOUT 40% CAGR DURING 2014-2020

2013 2020 CAGR%

XX XX

XX%

XX XX XX%

XX XX XX XXXXXX XX XX XX

*Market share has been rounded off to the nearest digit. *CAGR is calculated from 2014 to 2020. Source: Investor Presentations, Annual Reports, Press Releases, Expert Interviews, and MarketsandMarkets Analysis

FIGURE 5 APAC REGION DOMINATES THE GLOBAL NEXT-GENERATION SEMICONDUCTOR MEMORY MARKET

EUROPE Market Share = XX% CAGR = XX%

NORTH AMERICAS Market Share = XX% CAGR = XX%

ASIA-PACIFIC Market Share = XX% CAGR = XX%

REST OF THE WORLD Market Share = XX% CAGR = XX%

*The figure contains market sharesof different geographic regions in 2013 and they have been rounded off to the nearest digit. Source: Annual Reports, Press Releases, Expert Interviews, and MarketsandMarkets Analysis

APAC (China, Japan, Taiwan, South Korea, and others) accounted for the largest share—XX%—of the global next-generation memory solution market in 2013. In 2013, the North American region accounted for the second-largest share of XX%, followed by Europe with XX%. Among all the geographies, the APAC region is expected to grow at the highest rate in the next six years, at a CAGR of XX%.

In APAC, there is a huge demand for the stable and low-cost memory solutions, especially in developing economies like China, Taiwan, and many more. The demand is slowly shifting from stability and low-cost memory solutions to the high performing, highly scalable memory applications. This transformation in customer demand is really pushing the emerging next-generation semiconductor memory solution market at a higher growth.

The Americas was the second-largest market in 2013. Strong growth in PC sales and storage devices drive the memory market in this region as it is not only the hub of computer industry, smartphones, tablets, gaming consoles but also the prominent innovator of digital still camera technology. In South America and Africa, the need for smartphones is increasing which is expected to expand the market for emerging memory solutions used in consumer electronics devices. Thus, the emerging memory market in this region is expected to show high growth in the coming years.

Major companies in this region, for example, Samsung Electronics Co. Ltd. (South Korea), Micron Technology, Inc. (U.S.), SK Hynix, Inc. (South Korea), and Toshiba Corporation (Japan) are among the major stakeholders of the next-generation memory solution market.

FIGURE 6 IN 2013, SAMSUNG ELECTRONICS CO., LTD. HELD THE LARGEST MARKET SHARE IN THE GLOBAL NEXT-GENERATION SEMICONDUCTOR MEMORY MARKET

• Leader in the next-generation memory market • Broad product portfolio with memory and storage devices for PCs, mobiles, tablets, etc. • Others include Intel • Launched 840 EVO mSATA (mini- Corporation (U.S.), Serial ATA) Solid State Drive (SSD) Adesto Technologies that included the industry's first 1 Corporation, Inc. (U.S.), terabyte (TB) mSATA SSD. Fujitsu Ltd. (Japan), Cypress Semiconductor Corporation (U.S.), IBM XX% Samsung Electronics (U.S.), and others. XX% Co., Ltd. • Top 5 companies Micron Technology, Inc. accounted for a XX% XX% share of ~XX% of SK Hynix, Inc. the global next- Toshiba Corporation generation memory market. XX% SanDisk Corporation

Others XX%

• Held the second position in the global next- generation memory market. • Extensive product portfolio with DRAM modules, hybrid memory cube, multichip packages, SSDs, etc. • Micron Technology, Inc. introduced a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets.

Source: Annual Reports, Press Releases, Expert Interviews, and MarketsandMarkets Analysis

Samsung Electronics Co., Ltd. (South Korea) held the leading position in the global next-generation memory solution market with a share of ~XX% in 2013. To maintain its leading position and to ensure its future growth, the company has adopted other strategies such as agreements and partnerships. With regards to this, the company has recently signed various agreements to expand its network.

Samsung, due to its global research program, is the MRAM market leader. Samsung has collaborated with more than XX partners on STT-MRAM innovations. At present, Fujitsu Ltd. (Japan) dominates the FRAM nonvolatile memory market because the company has launched several FRAM products in the past few years. Fujitsu Ltd. (Japan) started experimenting with FRAM in early 2000, and now, the company has FRAM products having variable size up to 2 MB.

FIGURE 7 NEW PRODUCT DEVELOPMENT WAS ONE OF THE KEY STRATEGIES ADOPTED BY TOP COMPANIES

XX% XX% New Product Launches Collaborations, Partnerships, Agreements

XX% XX% Mergers and Expansions Acquisitions

*The market share has been rounded off to the nearest digit. Source: Annual Reports, Press Releases, Expert Interviews, and MarketsandMarkets Analysis

New product development was one of the key strategies adopted by the industry players to achieve growth in the global next generation semiconductor memory solution market.

Fujitsu’s new FRAM product MB85RC1MT is the important recent development in the memory market. It has 1 Mb memory and is the highest density product with I2C interface.

The new product development strategy accounted for the largest share of ~XX% of the total strategic developments in the global next-generation semiconductor memory solution market. Leading companies adopted this strategy for strengthening their product portfolio and catering to the demand from various sectors. Micron Technology, Inc. and Crucial Technology (U.S.) introduced next-generation solid-state drive (SSD) for data storage which improved performance by XX times and increased battery life by consuming ~XX% less power. Its advanced features included data protection and hardware-based encryption against unexpected power loss.

Collaborations and various partnerships & agreements were among the major strategies of the key companies. SK Hynix, Inc. (South Korea) signed a joint development agreement as well as technology license agreement with IBM (U.S.) for phase change random-access memory (PCRAM). SK Hynix, Inc. (South Korea) and Toshiba Corporation (Japan) agreed for a strategic collaboration. They are expected to work in developing the spin torque magnetoresistance RAM (MRAM).

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