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Investigation of Resistive Memories for Storage Class Memory Applications Diego Alfaro Robayo

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Investigation of Resistive Memories for Storage Class Memory Applications Diego Alfaro Robayo Investigation of resistive memories for Storage Class Memory applications Diego Alfaro Robayo To cite this version: Diego Alfaro Robayo. Investigation of resistive memories for Storage Class Memory applications. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-..], 2020. English. NNT : 2020GRALT036. tel-03103308 HAL Id: tel-03103308 https://tel.archives-ouvertes.fr/tel-03103308 Submitted on 8 Jan 2021 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THÈSE Pour obtenir le grade de DOCTEUR DE L’UNIVERSITÉ GRENOBLE ALPES Spécialité : NANO ELECTRONIQUE ET NANO TECHNOLOGIES Arrêté ministériel : 25 mai 2016 Présentée par Diego ALFARO ROBAYO Thèse dirigée par Gerard GHIBAUDO, Directeur de Recherche, Université Grenoble Alpes et codirigée par Gabriel MOLAS, CEA préparée au sein du Laboratoire CEA/LETI dans l'École Doctorale Electronique, Electrotechnique, Automatique, Traitement du Signal (EEATS) Mémoires resistives pour applications Storage Class Memory (SCM) Investigation of resistive memories for Storage Class Memory applications Thèse soutenue publiquement le 22 septembre 2020, devant le jury composé de : Monsieur AHMAD BSIESY PROFESSEUR DES UNIVERSITES, UNIVERSITE GRENOBLE ALPES, Président Monsieur QUENTIN RAFHAY MAITRE DE CONFERENCES HDR, GRENOBLE INP, Examinateur Madame MARIE-PAULE BESLAND DIRECTRICE DE RECHERCHE, CNRS DELEGATION BRETAGNE PAYS DE LOIRE, Rapportrice Monsieur PAOLO PAVAN PROFESSEUR , UNIV. DE MODENE (REGGIO EMILIE) - ITALIE, Rapporteur Monsieur DAMIEN DELERUYELLE PROFESSEUR DES UNIVERSITES, INSA LYON, Examinateur Abstract Investigation of Resistive Memories (ReRAM) for Storage Class Memory applications (SCM) In classical von-Neumann architectures, processing and memory blocks are separated. Latency times for the latter are much more slower. To boost performances, memory hier- archy has been introduced to combine small, fast, but expensive technologies with large, slower, and cheaper ones. In such hierarchy, a notorious latency and storage gap can be distinguished between the lowest memory level and the highest storage one: DRAM and Flash blocks, respectively. Emerging non-volatile technologies are called to fill such gap through the so-called Storage Class Memories (SCM). Among them, Resistive Random- Access Memories (ReRAM), represent an interesting candidate to improve flash perfor- mances due to their good scalability, low-power consumption, Back-End of Line compati- bility, fast writing and erasing process, and good endurance. However, several roadblocks hinder their implementation at large industrial scale, notably high variability, and low non-linearity, which avoids large crossbar arrays implementation. This thesis work ex- plores such aspects to increase attractiveness of ReRAM technologies for SCM applica- tions. For the former, endurance variability is addressed at the array level through various measurements over diverse stacks configurations. Results allow to study the impact of programming conditions on failure mechanisms dispersions, leading to the development of a stochastic model based on defects generation inside the resistive layer. As for the non-linearity issue, successful co-integration between best-in-class HfO2 and GeSeSbN Ovonic Threshold Selector (OTS) in 1S1R structures, is demonstrated. Hence, leakage currents compatible with 100Mb-1Gb bank size are obtained. For the first time, to our knowledge, key parameters of OTS+ReRAM systems for high-density crossbar arrays are identified and studied at the statistical level, allowing proposition of further optimizations and opening the way to a whole field of studies which include new materials and circuits to improve 1S1R performances. Keywords: Resistive Random Access Memories (ReRAM); OxRAM; CBRAM; Ovonic Threshold Switch (OTS) selectors; 1S1R co-integrations. ii Résumé Mémoires résistives pour applications Storage Class Memory (SCM) Dans les architectures classiques dites de Von-Neumann pour des systèmes d’information, les blocs de mémoire et de traitement sont séparés. Pour le premier, les temps d’accès sont beaucoup plus importants. Afin d’optimiser les performances, une hiérarchie de mémoire a été mise en place. Elle combine des technologies coûteuses, de petite taille, mais très performantes en termes de vitesse; avec d’autres plus larges, à bas coûts per bit, mais plus lentes. Dans une telle hiérarchie, un gap important existe en termes de temps d’accès et capacité de stockage entre les blocs de mémoire les plus bas et ceux de stockage les plus hauts (briques DRAM et FLASH, respectivement). Des technologies émergentes non-volatiles, appelées Storage Class Memories (SCM) sont candidates à rem- plir tel gap. Entre elles, les mémoires résistives vives, ReRAM, de l’abbreviation anglaise pour Resistive Random Access Memories; représentent une alternative très intéressante grâce à leur bonne scalabilité, basse consommation, compatibilité avec la Back-End-Of- Line (BEOL), leurs temps d’écriture et lecture rapides, ainsi qu’une bonne endurance. Cependant, plusieurs obstacles empêchent leur implémentation à l’échelle industriel, no- tamment la haute variabilité des états résistifs et la non-linéarité réduite entre eux, ce qui limite l’implémentation des matrices mémoires larges. Ces deux aspects sont étudiés dans ces travaux de thèse. Pour la variabilité, il se trouve que l’endurance, caractéristique fon- damentale vis-à-vis des applications SCM, est aussi dispersée. Ce manuscrit présente des caractérisations électriques en endurance au niveau statistique sur des matrices ReRAM de 4Kb. Plusieurs empilements mémoires furent étudiés, ainsi qu’une grande variété des conditions de programmation pour le cyclage. Il a été observé comment la valeur médi- ane et la déviation standard du claquage des mémoires sont principalement affectées par le RESET. Les résultats expérimentaux ont été utilisés dans la proposition d’un modèle stochastique basé sur la génération de défauts dans la couche résistive. Concernant l’autre grand axe de cette thèse, une co-intégration réussie entre une mémoire HfO2 (1R) et un sélecteur (1S) de type Ovonic Threshold Switch (OTS), a été demontrée. Les courants de fuite, obtenus grâce à l’addition de l’OTS, sont compatibles avec des matrices entre 100Mb et 1Gb. Pour la première fois, à notre connaissance, des paramètres influant sur les performances des structures 1S1R ont été étudiés au niveau statistique pour des matrices crossbar à haute densité, ainsi permettant la proposition d’optimisations futures et des nouvelles études incluant des nouveaux matériaux et circuits, pour continuer à améliorer les performances des dispositifs 1S1R. iii Mots clés: Mémoires vives résistives (ReRAM); OxRAM; CBRAM; sélecteurs OTS; co-intégrations 1S1R. iv Acknowledgments "This is the end, beautiful friend. This is the end, my only friend. The end...", we hear that piece of "The End" by The Doors, while a military helicopter crosses the screen with a tropical forest burning in the background. This scene, appearing in the Francis Ford Coppola film, Apocalypse Now; is part of one of the most enjoyable sequences in cinema history. At least for me, it remains as a vivid memory and just now, while I am writing this acknowledgments section, it is playing in my head. I am not sure why. Maybe because they mark the final stage of this writing journey that has been the PhD manuscript. Even if it comes as the very last step, I consider saying thank you one of the most important aspects in life, so here we go. First, I would like to thank Gérard Ghibaudo for being my thesis director and for enlightening the path with his immense knowledge during the darkest hours. Thanks to Quentin Rafhay for his enormous help and his guidance in key moments of this thesis. His ideas were always important to keep the pace for the progress of the subject. Thank you Gabriel Molas. I am glad with life for finding not only a supervisor but also a person with great human quality. He was able to motivate me to give my best, while being patient and he cheered me up when things got complicated. All our discussions were very fruitful and I learned from his professionalism in countless aspects. Being the young padawan of Cécile Nail and Gilbert Sassine was an easy job. Thanks to them for the time they dedicated to teach me their best skills in the lab and for letting me help them with their research when I was just and apprentice in the advanced electronics memories field. Anthonin Verdy was also my mentor for the Ovonic Threshold Selector part. I thank him for his advice and help with such devices and with the chalcogenide materials in general. In addition, I want to mention Joel Minguet, who became an amazing partner for the OTS+RRAM studies. Thank you for your help and knowledge Joellio. Obtaining the most remarkable results of this thesis work would not had been possible without the help of incredible researchers, whom I met during these three years at CEA- Leti: Laurent Grenouillet, Gabriele Navarro, Elisa Vianello, Jean-François Nodin, Eti- enne Nowak, Cathy Carabasse,
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