• FRAM is a registered trademark of Ramtron International Corporation. Other company names and brand names are the trademarks or registered trademarks of their respective owners.

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The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. FUJITSU SEMICONDUCTOR 2005 FUJITSU LIMITED Printed in Japan AD05-00024-8E June, 2005 FRAM is nonvolatile and writes fast no battery required!

Ferroelectric memory, FRAM (Ferroelectric RAM) is a nonvolatile memory, which has the nonvolatile features of high-speed writing operation, low power consumption, high-rewriting endurance. memory It reduces the burden of manufacture development because it doesn't need to differentiate low power  between RAM and ROM. It also helps to cut down the burden for manufacture, consumption FRAM maintenance and environment by making it batteryless. Fujitsu has FRAM products such as LSI for standalone memory, smartcards and RFID. High-speed We also correspond flexibly to custom made LSI that matches to ourcustomer requirements. writing operation Fujitsu has already delivered * more than 200 million pcs. FRAM since our mass-production started. We lead the world to develop and manufacture FRAM.

* : At April, 2005

1 2 What is FRAM? FRAM (ferroelectric random access memory) is a non- that uses ferroelectric film as a for storing . Possessing characteristics of both ROM and RAM devices, FRAM features high speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal for use in smart cards, where high security and low power consumption are important, as well as in cellular phones and other devices.

What is Ferroelectric material? Characteristics of FRAM (Comparison with EEPROM)

PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly used as a Write Time typical ferroelectric material. An electric polarization of PZT (shift up/down of Zr/Ti atom) 1.00E-00 remains after applying and removing an external electric field, from which a nonvolatile property EEPROM: 5ms/16Bytes Baud-rate: results. As a result of this, the power consumption required for is very low. =312500ns/Byte 106Kbps 1.00E-01 >Baud-rate 212Kbps Crystal structure of Ferroelectric material 424Kbps 848Kbps 1.00E-02 ) . c e s e ( 1.00E-03 t

y e B m i 1 T

e t

i 1.00E-04 r

Electric field W : Pb 1.00E-05 : O FRAM write cycle time is short enough FRAM: 180ns/Byte : Zr / Ti 1.00E-06 to be ignored. Baud-rate limits the <

Energy consumption at 64-byte write cycle 1000 Comparison of FRAM® with other memory products EEPROM

) 100 1 2 3 4 5 s SRAM* DRAM* EEPROM* FLASH* FRAM* m - W m (

Memory type Volatile back-up Volatile Non-volatile Non-volatile Non-volatile n

o 10 i t

1T/1C p

Cell structure 6T 1T/1C 2T 1T m u

2T/2C s 0.2mW-ms n

o 0.133mW-ms c 1 Read cycle (ns) 12 70 200 70 110 y

g 0.057mW-ms r

e 0.5 m, 5V, FRAM 20 12 n µ Internal write voltage (V) 3.3 3.3 3.3 E 0.5µm, 3.3V, FRAM (supply voltage 3.3V) (supply voltage 3.3V) 0.1 0.35µm, 3.3V, FRAM Write cycle 12ns 70ns 3ms 1 sec. 110ns FRAM FRAM current consumption is estimated Data write Overwrite Overwrite Erase + Write Erase + Write Overwrite 0.01 for low power smart card application. Byte Sector Technology Data erase Unnecessary Unnecessary Unnecessary (64 byte page) (8K/16K/32K/64K) Energy consumption of FRAM is 1/20 or less of EEPROM. Endurance ∞ ∞ 1E5 1E5 1E10 to 1E12 Stand-by current (µA) 7 1,000 20 5 5 Endurance Read operation current (mA) 40 80 5 12 4 10,000,000,000 1,000,000,000 Write operation current (mA) 40 80 8 35 4 100,000,000

) FRAM Read/Write e Notes: *1: 512K × 8bit *2: 2M × 8bit *3: 8K × 8bit *4: 1M × 8bit *5: 8K × 8bit t u 10,000,000 Endurance n i m

/ 1,000,000 (

e

c 100,000 1.E+12 n a r

u 10,000 1.E+11 d n E

1,000 1.E+10 s s e

c 100

c EEPROM Erase/Write/Read A 10 Endurance m u m

Features of FRAM i 1 x a

Currently, EEPROM is mainly used for data memory in Smart cards. However, FRAM is superior M 0.1 to EEPROM in terms of speed, power consumption, and high endurance in write mode. 0.01 1.E+05 Compared with EEPROM, Fujitsu’s FRAM has the following features: 0.001 0 2 4 6 8 10 12 1. 1/30,000 high-speed write time Life Cycle (Year) 2. 1/400 or less power consumption 3. 100,000 times or more rewrite capability (count) Endurance of FRAM is 100,000 times of EEPROM.

3 4 Line up

HIFERRON MB85R256 MB94R215B diagram LSI for FRAM Standalone Memory Multi-application smart card LSI FRAM Standalone Memory with density of 256K bits. An LSI for multi-purpose card in which JAVA OS and 32KBytes of FR CPU The bit configuration is 32K words × 8 bits. FRAM are embedded with a 32 bits Fujitsu FR RISC processor. By Core We use pseudo SRAM interface based on conventional incorporating FRAM and an encryption circuit (DES, RSA), multiple- asynchronous SRAM. applications can be executed at high speed and with high security. SRAM 8 KB 3ch Features It is truly an LSI that meets the need of the e-commerce era. Reload Timer ● Operating power supply voltage: +3.0V to +3.6V Features ROM 128 KB ● Operating temperature range: −40°C to +85°C ● 32 bit RISC CPU Cut-in Control ● Access time: 150ns ● 32KByte FRAM FRAM 32 KB ● Cycle time: 235ns ● 8KByte SRAM Various Registers ● Data writing/reading endurance: 1010 times ● 128KByte Mask ROM RSA SIO ● SOP 28 pin package ● ISO7816, T = 0,1 contact interface DES ● TSOP TYPE Ι 28 pin package ● Contactless interface: ISO14443 TypeB

● Target Applications: Government card, amusement card, Contactless RF Contact electronic money, etc. I/F I/F ● OS Supported: Native and Java Card v2.2

MB85R1001 / MB85R1002 LSI for FRAM Standalone Memory LSI FerVID family FRAM Standalone Memory with density of 1M bits. MB89R118 Bit configuration of MB85R1001 is 128 words × 8 bits. LSI for RFID MB85R1002 is 64K words × 16 bits. An LSI for 13.56MHz frequency band RFID, which complies with We use pseudo SRAM interface based on existing ISO/IEC15693, the international standard for RFID tags. Compared asynchronous SRAM. with the conventional EEPROM-based RFID, this is equipped with Features high-density 2KBytes FRAM that can store large amount of data in ● Operating power supply voltage: +3.0V to +3.6V distribution cannels and can read/write the product information. ● Operating temperature range: −20°C to +85°C Features ● Access time: 100ns ● 2KByte FRAM ● Cycle time: 250ns ● Contactless Interface: ISO15693, 13.56MHz ● Data writing/reading endurance: 1010 times ● Target Applications: Inventory management, supply chain ● TSOP TYPE Ι 48 pin package management, anti-theft, etc. ● Operating Distance: 50cm or longer (depending on the antenna and other factors) ● With anti-collision algorithm

MB89R076 Block diagram LSI for contactless smart cards

An LSI for contactless smart cards, in which a 4KBytes is 512 Byte F2MC-8L 32Kbyte embedded in an 8 bits . The LSI also features an SRAM CPU Mask ROM MB89R111 encryption circuit for preventing misuse via counterfeit or LSI for RFID tampering, as well as an RF circuit, which is an essential element of Internal Data Bass An LSI for contactless memory cards with 2KByte FRAM contactless smart cards, a power source circuit, and other features. memory. Well matched for various ID cards and RFID tags. Features Features DES 4KByte FRAM Contactless RF ● 8 bit CPU I/F ● 2KByte FRAM ● 4KByte FRAM ● Contactless Interface: ISO14443 TypeB 8/16 bits ● 512 Byte SRAM Timer/Counter ● Target Applications: Access control, inventory management, ● 32KByte Mask ROM supply chain management, production/distribution ● Contactless Interface: ISO14443 TypeB management, etc. ● Target Applications: Student/employee ID card, electronic money, etc. ● Operating Distance: 10cm ● Encryption: DES ● With anti-collision algorithm

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