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FUJITSU LIMITED 7-1, Nishishinjuku 2-Chome, Shinjuku-Ku, Tokyo 163-0721 Tel : +81-3-5322-3353 Fax : +81-3-5322-3386 • FRAM is a registered trademark of Ramtron International Corporation. Other company names and brand names are the trademarks or registered trademarks of their respective owners. Japan Marketing Div., Electronic Devices Shinjuku Dai-ichi Seimei Bldg. FUJITSU LIMITED 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721 http://edevice.fujitsu.com/ Tel : +81-3-5322-3353 Fax : +81-3-5322-3386 North and South America Europe Asia Pacific Korea FUJITSU MICROELECTRONICS FUJITSU MICROELECTRONICS FUJITSU MICROELECTRONICS FUJITSU MICROELECTRONICS AMERICA, INC. EUROPE GmbH ASIA PTE LTD. KOREA LTD. 1250 E. Arques Avenue, M/S 333 Pittlerstrasse 47, #05-08, 151 Lorong Chuan, 1702 KOSMO TOWER, Sunnyvale, CA 94088-3470, USA D-63225 Langen, New Tech Park, 1002 Daechi-Dong, Tel : +1-408-737-5600 Germany Singapore 556741 Kangnam-Gu, Seoul Fax : +1-408-737-5999 Tel : +49-6103-690-0 Tel : +65-6281-0770 135-280, Korea http://www.fma.fujitsu.com/ Fax : +49-6103-690-122 Fax : +65-6281-0220 Tel : +82-02-3484-7100 http://www.fme.fujitsu.com/ http://www.fmal.fujitsu.com/ Fax : +82-02-3484-7111 http://www.fmk.fujitsu.com/ Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party's intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. FUJITSU SEMICONDUCTOR 2005 FUJITSU LIMITED Printed in Japan AD05-00024-8E June, 2005 FRAM is nonvolatile and writes fast no battery required! Ferroelectric memory, FRAM (Ferroelectric RAM) is a nonvolatile memory, which has the nonvolatile features of high-speed writing operation, low power consumption, high-rewriting endurance. memory It reduces the burden of manufacture development because it doesn't need to differentiate low power between RAM and ROM. It also helps to cut down the burden for manufacture, consumption FRAM maintenance and environment by making it batteryless. Fujitsu has FRAM products such as LSI for standalone memory, smartcards and RFID. High-speed We also correspond flexibly to custom made LSI that matches to ourcustomer requirements. writing operation Fujitsu has already delivered * more than 200 million pcs. FRAM since our mass-production started. We lead the world to develop and manufacture FRAM. * : At April, 2005 1 2 What is FRAM? FRAM (ferroelectric random access memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, FRAM features high speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal for use in smart cards, where high security and low power consumption are important, as well as in cellular phones and other devices. What is Ferroelectric material? Characteristics of FRAM (Comparison with EEPROM) PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly used as a Write Time typical ferroelectric material. An electric polarization of PZT (shift up/down of Zr/Ti atom) 1.00E-00 remains after applying and removing an external electric field, from which a nonvolatile property EEPROM: 5ms/16Bytes Baud-rate: results. As a result of this, the power consumption required for data storage is very low. =312500ns/Byte 106Kbps 1.00E-01 >Baud-rate 212Kbps Crystal structure of Ferroelectric material 424Kbps 848Kbps 1.00E-02 ) . c e s e ( 1.00E-03 t y e B m i 1 T e t i 1.00E-04 r Electric field W : Pb 1.00E-05 : O FRAM write cycle time is short enough FRAM: 180ns/Byte : Zr / Ti 1.00E-06 to be ignored. Baud-rate limits the <<Baud-rate transaction time. EEPROM write cycle 1.00E-07 time limits the transaction time. 1 10 100 1000 10000 Data size (bit) Writing time of 1 byte data on FRAM is 1/30,000 of EEPROM. Energy Consumption Energy consumption at 64-byte write cycle 1000 Comparison of FRAM® with other memory products EEPROM ) 100 1 2 3 4 5 s SRAM* DRAM* EEPROM* FLASH* FRAM* m - W m ( Memory type Volatile back-up Volatile Non-volatile Non-volatile Non-volatile n o 10 i t 1T/1C p Cell structure 6T 1T/1C 2T 1T m u 2T/2C s 0.2mW-ms n o 0.133mW-ms c 1 Read cycle (ns) 12 70 200 70 110 y g 0.057mW-ms r e 0.5 m, 5V, FRAM 20 12 n µ Internal write voltage (V) 3.3 3.3 3.3 E 0.5µm, 3.3V, FRAM (supply voltage 3.3V) (supply voltage 3.3V) 0.1 0.35µm, 3.3V, FRAM Write cycle 12ns 70ns 3ms 1 sec. 110ns FRAM FRAM current consumption is estimated Data write Overwrite Overwrite Erase + Write Erase + Write Overwrite 0.01 for low power smart card application. Byte Sector Technology Data erase Unnecessary Unnecessary Unnecessary (64 byte page) (8K/16K/32K/64K) Energy consumption of FRAM is 1/20 or less of EEPROM. Endurance ∞ ∞ 1E5 1E5 1E10 to 1E12 Stand-by current (µA) 7 1,000 20 5 5 Endurance Read operation current (mA) 40 80 5 12 4 10,000,000,000 1,000,000,000 Write operation current (mA) 40 80 8 35 4 100,000,000 ) FRAM Read/Write e Notes: *1: 512K × 8bit *2: 2M × 8bit *3: 8K × 8bit *4: 1M × 8bit *5: 8K × 8bit t u 10,000,000 Endurance n i m / 1,000,000 ( e c 100,000 1.E+12 n a r u 10,000 1.E+11 d n E 1,000 1.E+10 s s e c 100 c EEPROM Erase/Write/Read A 10 Endurance m u m Features of FRAM i 1 x a Currently, EEPROM is mainly used for data memory in Smart cards. However, FRAM is superior M 0.1 to EEPROM in terms of speed, power consumption, and high endurance in write mode. 0.01 1.E+05 Compared with EEPROM, Fujitsu’s FRAM has the following features: 0.001 0 2 4 6 8 10 12 1. 1/30,000 high-speed write time Life Cycle (Year) 2. 1/400 or less power consumption 3. 100,000 times or more rewrite capability (count) Endurance of FRAM is 100,000 times of EEPROM. 3 4 Line up HIFERRON MB85R256 MB94R215B Block diagram LSI for FRAM Standalone Memory Multi-application smart card LSI FRAM Standalone Memory with density of 256K bits. An LSI for multi-purpose card in which JAVA OS and 32KBytes of FR CPU The bit configuration is 32K words × 8 bits. FRAM are embedded with a 32 bits Fujitsu FR RISC processor. By Core We use pseudo SRAM interface based on conventional incorporating FRAM and an encryption circuit (DES, RSA), multiple- asynchronous SRAM. applications can be executed at high speed and with high security. SRAM 8 KB 3ch Features It is truly an LSI that meets the need of the e-commerce era. Reload Timer ● ROM 128 KB Operating power supply voltage: +3.0V to +3.6V Features ● ● Cut-in Control Operating temperature range: −40°C to +85°C 32 bit RISC CPU ● ● FRAM 32 KB Access time: 150ns 32KByte FRAM ● ● Various Registers Cycle time: 235ns 8KByte SRAM ● 10 ● RSA Data writing/reading endurance: 10 times 128KByte Mask ROM ● ● SIO SOP 28 pin package ISO7816, T = 0,1 contact interface ● ● DES TSOP TYPE Ι 28 pin package Contactless interface: ISO14443 TypeB ● Target Applications: Government card, amusement card, Contactless RF Contact I/F I/F electronic money, etc.
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