Memory Technology for Space

Home , Data Storage, EEPROM, Ferroelectric RAM, Flash memory, Magnetoresistive RAM, Universal memory

Memory TechnologySpaceMemory for Military and AerospaceMilitary Devicesand ProgrammableLogic ( All trademarks All registered trademarksand pr the are Product names that appear in this presentation this in are thatappear names Product SEAKR Engineering, Inc. Engineering, SEAKR NASA Goddard Space NASAFlightCenter Goddard August31,2009 Ian Troxel Ian SeminarDay operty of their respective opertyof their owners.

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Programmable EEPROM Logic Device Logic RMDRAM SRAM Flash ” Other MAPLD 2009MAPLD J J J Memory Devices Space for Applications Memory Specialization Volatilememory Non-volatilememory inprevalent space systems Specializationseen systemsalso incommercial • • • • • • • • • • Apps: Apps: run-time memory, buffering Fast access times, throughput Increased power dissipation Decreased capacity Values are not persistent, also … Apps: start-up memory,persistent storage Slower access times, throughput Lower power dissipation Greater capacity Persistent values, also…

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace c/o Scholarpedia.com c/o MAPLD 2009MAPLD J J J J Memory Devices Space for Applications Non-volatile: EEPROM Maxwell,Samsung, etc. Options:Atmel, Actel,Aeroflex, Hitachi, Infineon, Typicaldevicecapabilities include* Typicallystoreused to small ofamounts data fors ProgrammableRead-Only ElectricallyErasable Memory • • • • • • • • 0 o1 a TID tolerance 10K to 1M rad ~10-year data retention or more ~1,000,000 rewrite cycles 32Kb to 256Kb options informationDebug codeBoot Calibration tables Device configuration

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tartup Flash MAPLD 2009MAPLD Other es Memory Devices Space for Applications EEPROM Structure J J Control circuitry, Control chargeespecially pumps,suscept SEETID and relativelyperformance strong gatetransistors Arraysdatape floating provide of c/o The Computer Language Company Language Computer The c/o

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace rsistenceand ible MAPLD 2009MAPLD J J J J J J Memory Devices Space for Applications Non Volatile: Flash Xilinxoffersflash-based configuration memory as w Options:Hynix, Intel, Micron, Samsung, Spansion, e Typicaldevicecapabilities include* Typicallystoreamountsused to large ofs for data varietiesNOR and NAND Specialtype of EEPROM thatfast erase offers • • • • • • • • Kt udeso a TID tolerance typical (ELDRS to5K hundreds of rad K ~20-year data retention or more ~5,000 to ~500,000 rewrite cycles 256Mb to 8Gb options typical informationDebug codeBoot Calibration tables Device configuration

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Programmable EEPROM Logic Device Logic RMDRAM SRAM effects) tartup Flash tc. ell MAPLD 2009MAPLD Other es J J J J J Memory Devices Space for Applications Flash Structure Market drivenapplications Market by NAND optimizedforcell NAND small size optimizedforNOR speed used ininterfaces twoDifferent options floating of Arrays gate transistors • • • • • • eae“ae as long as interests overlap areWe “safe” drivesUSB and iPhone/iPod and erase applications, i.e. data-storage Ideal for high-density, high-speed program and faster write/erase via block operations Random access traded for lower cost-per-bit applications such as code-boot Ideal for lower-density, high-speed read NOR: random-access, page NAND: access

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace aturesizereduction ices up to 700Krad to up ices reduction “tricks” reduction /DTRA flash study) flash /DTRA MAPLD 2009MAPLD J J J J Memory Devices Space for Applications Volatile: SRAMVolatile: etc. Options:BAE, Aeroflex, Honeywell, Maxwell, Samsung Typicaldevicecapabilities include* Typicallycontrol usedfor processing applications Random MemoryAccessStatic • • • • • • • ~10ns access latency typical TID tolerance typical 100K to 1M rad No data retention rewrite cycles“infinite” 4Mb to 64Mb options typical Processor’s “main memory” Buffer between cache and storage

*Datataken from openliterature andcompany websit

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace age uffers MAPLD 2009MAPLD J J J J Memory Devices Space for Applications Volatile: DRAMVolatile: Options:Hyundai, Micron, Samsung, etc. (commercial Typicaldevicecapabilities include* Typicallyused to processing data applications Memory Random Access Dynamic • • • • • • • • • ~50ns access latency typical Variable TID tolerance No data retention rewrite cycles“infinite” 2Gb to 8Gb options typical Processor’s “main memory” Buffer between cache and storage e.g. DDR2 SDRAM Synchronous (S), Double Data Rate options (DDR) typ

*Datataken from openliterature andcompany websit

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace rage MAPLD 2009MAPLD J J J J Memory Devices Space for Applications DRAM versus SRAM access complexity SEFI access and and SET effects device has but increased performance options rate have improved DRAM the primaryis concern reducingwhen preferred latency data access and weightare and important) is SRAM primary the (e.g.consideration sizewhen The advent of synchronousThe advent and double data typically is DRAM density when preferred is is commoditydriver PrimaryPCs market cost, Density, arelatency, power drivers • • SRAM: SRAM: reduced latency,power and density greaterDRAM: density reduced and $ per bit

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace c/o Samsung c/o another concern y components rsen SEE MAPLD 2009MAPLD J J J Commercial DRAM in Space Memory Devices Space for Applications systems usingCOTS spacesystems memory for be to andcharacterizedmitigated in downlinkrates uptoat data4Gbps dueto compresssystem capture, space and with2Tbcapacity commercial aimaging for increasinglycapablesystems beingandare to produceleveraged outpacing far costrad-hard technologies Radiation effects suchRadiation TIDas effects andSEE need example,For usedSDRAM on SEAKR SSR densities, performanceCommercial and • • cost-effective than rad-hard for these missions Telling that efforts to mitigate these effects more No other memory option could meet requirements

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MAPLD 2009MAPLD Memory Devices Space for Applications DRAM On-orbit Analysis J J J J Conference inof 2009March [4] Conference atStudy IEEEpresented results Aerospace Engineering includedwas in thestudy designedandbuilt by SEAKR usedin SSRs On-orbit datacommercial collected parts from DRAM usingCREME96made(using actual space weather) toandcompares rates upsetthem DRAM predictions studyand64Mb, 128Mb, Recent examined 256Mb significantdata beenin orbit longenough tostatisticallygather components, commercial lowerdensity haveparts Whileabove densities noware available2Gb in

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace MAPLD 2009MAPLD J J J Memory Devices Space for Applications DRAM Devices Studied Hitachi 256Mb HM5225405B SDRAM HM5225405B 256Mb Hitachi SDRAM SamsungKM44S32030 128Mb CMOSFPM SamsungDRAMKM44V16004 64Mb • • • • • • • • This component has a 0.16 Four die per package with a bit of width four Rev. B has a 0.20 Four die per package with a bit of width four Rev. B & D have a 0.28 Rev. A has a 0.32 Revisions A, B, and D of this part used in the anal memory cells thewithin same row PageFast Mode (FPM) offers high speed random acces µ µ minimum feature sizem minimum feature sizem µ minimum feature sizem 9of 3619 µ

m minimum feature size

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Device hours 1.8E8 st st MAPLD 2009MAPLD SSR Mission Descriptions Mission SSR Memory Size Memory Devices Space for Applications J J J 5 bHitachi Mb 256 2M asn 2x,Snhoos e IV 32Mx4, Synchronous,revB Samsung 128Mb (MRO) (MRO) includedas well 4bSmug1M4 0S e I IV 16Mx4, 60nS, revD II,III,IV 16Mx4, 60nS, revB 16Mx4, 60nS, revA Samsung Samsung Samsung 64Mb 64Mb 64Mb Data from the NASA’s Mars Reconnaissance Orbiter Orbiter Reconnaissance Mars NASA’s the Datafrom Mission IV in the was ISSorbit MissionsI, andII III LEOvarious were orbits Manufacturer 1of 3621 64Mx4, Synchronous,75ns

Description

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Memory Devices Space for Applications MRO Analysis ResultsMRO J against theagainst scaledsun spot data andCME data SSR errors (all corrected by EDAC) have been(allplotte have bycorrectedSSR errors EDAC) • • increased sunspotactivityincreased but nodirectcorrelatio tooccasionallyErrors periods correspond of correlationbetween sunspots anderrors Nonotable CMEcontributions andno substantial

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GCR PGCR

Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace SEPHI to upsetrate CREME96in SEPP TRP PTRP AVG. MAPLD 2009MAPLD Memory Devices Space for Applications Study Results J J the missions the usedcomparisonfor the Analysis assumed sensitive volume depth sensitive Analysisof assumed 0.5µm space for Historical data which occurredweather du MRO Program III IV II I Samsung Samsung Samsung Samsung 128 Mb128 256 Mb256 Hitachi 64 Mb64 Mb64 Mb64 Memory ypeTy .2-16.29E-11 1.02E-11 1.23E-9 2.15E-10 .4- 5.60E-8 4.44E-8 1.58E-8 1.55E-9 (Correctable Errors) per Errors) .383.15E-8 2.93-8 On Orbit bit-day Upsets Upsets per per bit-day CREME96 Upset Upset Rate Predicted 6of 3626

CREME96 to

Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace 10.20 SystemsProcessing and Storage Data Aerospace Predicted On Orbit 6.16 5.72 1.08 1.26 Ratio Ratio of Upsets Assumption Shielding (mils (mils Al) 150 150 125 150 150 Mars LEO LEO LEO ISS Orbit MAPLD 2009MAPLD ring • • • • J Memory Devices Space for Applications Tool Conservatism Tool Noonesize all fits for guessing tool conservatism Ongoingadditionalexploreresearch to possibilitie indicatesinrelativelymodels predictions accurate Minordifferenceobserved andpredicted between ups Sensitive (SV)volume assumptions also explored Ratio ofto CREME96Ratio predicted shieldingthicknessexplored actualupsets functionaasof • • • • compared trappedto the proton contributions Earth-orbiting at for LEO SV effects spacecraft neg Increased shielding leads to rates slightly closer Less athan 17% change was observed in the predicte Other thicknesses explored ranging from mils150 to

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace isAuiu rga rga IProgramIII ProgramII I Program Aluminum Mils SystemsProcessing and Storage Data Aerospace 300 200 150 to on-orbit rates 10.20 9.37 9.85 300 mils d upset rate 1.13 1.20 1.26 s ligible MAPLD 2009MAPLD ets 0.95 1.01 1.05 ERMN 20s~m 16LwHigh Low ~1e6 ~3ms ~200ns NV EEPROM Summary of Characteristics Memory Devices Space for Applications RMV~0s~0sIfnt ihMedium High Infinite ~50ns ~50ns V DRAM RMV~0s~0sIfnt eimHigh Medium Infinite ~10ns ~10ns V SRAM Type ls V~0s~0m 15LwLow Low ~1e5 ~500ms ~70ns NV Flash J J J the cost ofcost the power and volatilitydata latency andextendedaccess devicelife spansbut a Flash andFlash principally market DRAM commercial from hasoppositeNon-volatile memory characteristics Volatilememoryreduced of advantages provides Volatile Latency Read Latency Write 8of 3628

Lifespan

Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Power Usage Capacity Medium High Low Low MAPLD 2009MAPLD TID t t Memory Devices Space for Applications Other Other TypesMemory J J J J storage than the the thanstorage andtried true andchargelectrons beingexplored forspace systems Memory with otherMemory types applications with of alsoare Promisingoptions include “universala create seeking memory” to Developers underway Efforts to developalternativeanof means • • • • hloeieRAMChalcogenide RAMMagnetoresistive Ferroelectric RAM volatile Non with good density and fast access

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J J J Memory Devices Space for Applications FRAM Structure pin:Fjtu ato (underdevelopment) Options:Fujitsu, Ramtron Characteristics MemoryRandom Access Ferroelectric • • • • • • • • Marketed for smart cards and hand-held devices Characteristics split differencethe between RAM an High-speed access, low power consumption Non-volatile memory high with endurance No charge required to maintain persistence Low power required to change value Electric polarization of atom determines value Ferroelectric film (capacitor) for storing data – No charge No requiredpump

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace d ROM c/o Fujitsu c/o MAPLD 2009MAPLD J J J Memory Devices Space for Applications MRAM Structure Options:Everspin, Hitachi, NEC,IBM, Toshiba Characteristics RandomMemoryAccess Magnetoresistive • • • • • • • • Strong commercial support to create the “universal Characteristics split differencethe between RAM an High-speed access, low power consumption Non-volatile memory high with endurance No charge required to maintain persistence Low power required to change value Magnetic polarization determines electric Magnetic Tunnel Junction (MTJ) stores data – No charge No requiredpump resistance is which sensed to read value

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace d ROM memory” c/o Everspin c/o MAPLD 2009MAPLD J J J Memory Devices Space for Applications C-RAM Structure Options:BAE, Hitachi, IBM, Intel,Samsung, etc. Characteristics Memory RandomAccess Chalcogenide • • • • • • • • • • A:4b I o1Ma with 70ns read and 500ns wri 4Mb,BAE: TID to 1 Mrad Characteristics split differencethe between RAM an High-speed access, low power consumption Non-volatile memory high with endurance Also known as Phase-change memory Temperature sensitivitymay require process changes High programming current density activein region No charge required to maintain persistence Crystalline and amorphous states possible and glass stores data Heat applied to Chalcogenide – Optical propertiesin CD/DVDsusedmaterial Optical of resistance change is sensed to read value

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace d ROM te latencyte c/o IBM c/o MAPLD 2009MAPLD Memory Devices Space for Applications Conclusions J J J J J includingradiation testingand mitigation forspaceeven systems, cost per performance Hopefully commercial trends continuetrends Hopefullycommercial in favorour devices currentlyCommercial provide improved optionsmemoryexamined Alternative outlinedstudy on-orbitDRAM of SEAKR SSRs Fourstandard examinedandcontrasted memory types • • • • • No No single attribution is clear in the analysis p at to be up to 10 times more conservative observethan CREME96 predictions, using observed space weather, Representing ~180 million on-orbit device hours Included 64, 128, and 256Mb densities On-orbit upset data from 3853 COTS componentsDRAM

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Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace Aerospace Data Storage and Processing SystemsProcessing and Storage Data Aerospace resent d upsets shown MAPLD 2009MAPLD J J J J J Memory Devices Space for Applications References … and and numerous vendor web sites… IEEE Conference Aerospace for Space Systems Susceptibility of Commercial DRAMs [4] Ian Troxel, Chris Miller, Russ Owen, et al., “T Effects Data Workshop Nuclear and Space Radiation Effects Conference (NSR ofResponse Advanced Flash4G NAND Memories,” [3] T. Oldham, M. Suhail, M. Friendlich, et al., “T Company Whitepaper, Irvine, CA, April 5, Overview,” [2] Toshiba, Inc., vs.“NAND Flash NOR MemoryTechn Effects Data Workshop Nuclear and Space Radiation Effects Conference (NSR Effects Conducted by Jet Propulsionthe Laboratory, [1] GregoryR. Allen, “Compendium of Test Results o , Honolulu, HI, July 23-27, 2007. , Tucson, AZ, July 2008.14-18, , Big Sky, MT, March 9-13, 2009.

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