Emerging Storage and Memory Technologies
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Nanotechnology ? Nram (Nano Random Access
International Journal Of Engineering Research and Technology (IJERT) IFET-2014 Conference Proceedings INTERFACE ECE T14 INTRACT – INNOVATE - INSPIRE NANOTECHNOLOGY – NRAM (NANO RANDOM ACCESS MEMORY) RANJITHA. T, SANDHYA. R GOVERNMENT COLLEGE OF TECHNOLOGY, COIMBATORE 13. containing elements, nanotubes, are so small, NRAM technology will Abstract— NRAM (Nano Random Access Memory), is one of achieve very high memory densities: at least 10-100 times our current the important applications of nanotechnology. This paper has best. NRAM will operate electromechanically rather than just been prepared to cull out answers for the following crucial electrically, setting it apart from other memory technologies as a questions: nonvolatile form of memory, meaning data will be retained even What is NRAM? when the power is turned off. The creators of the technology claim it What is the need of it? has the advantages of all the best memory technologies with none of How can it be made possible? the disadvantages, setting it up to be the universal medium for What is the principle and technology involved in NRAM? memory in the future. What are the advantages and features of NRAM? The world is longing for all the things it can use within its TECHNOLOGY palm. As a result nanotechnology is taking its head in the world. Nantero's technology is based on a well-known effect in carbon Much of the electronic gadgets are reduced in size and increased nanotubes where crossed nanotubes on a flat surface can either be in efficiency by the nanotechnology. The memory storage devices touching or slightly separated in the vertical direction (normal to the are somewhat large in size due to the materials used for their substrate) due to Van der Waal's interactions. -
AXP Internal 2-Apr-20 1
2-Apr-20 AXP Internal 1 2-Apr-20 AXP Internal 2 2-Apr-20 AXP Internal 3 2-Apr-20 AXP Internal 4 2-Apr-20 AXP Internal 5 2-Apr-20 AXP Internal 6 Class 6 Subject: Computer Science Title of the Book: IT Planet Petabyte Chapter 2: Computer Memory GENERAL INSTRUCTIONS: • Exercises to be written in the book. • Assignment questions to be done in ruled sheets. • You Tube link is for the explanation of Primary and Secondary Memory. YouTube Link: ➢ https://youtu.be/aOgvgHiazQA INTRODUCTION: ➢ Computer can store a large amount of data safely in their memory for future use. ➢ A computer’s memory is measured either in Bits or Bytes. ➢ The memory of a computer is divided into two categories: Primary Memory, Secondary Memory. ➢ There are two types of Primary Memory: ROM and RAM. ➢ Cache Memory is used to store program and instructions that are frequently used. EXPLANATION: Computer Memory: Memory plays a very important role in a computer. It is the basic unit where data and instructions are stored temporarily. Memory usually consists of one or more chips on the mother board, or you can say it consists of electronic components that store instructions waiting to be executed by the processor, data needed by those instructions, and the results of processing the data. Memory Units: Computer memory is measured in bits and bytes. A bit is the smallest unit of information that a computer can process and store. A group of 4 bits is known as nibble, and a group of 8 bits is called byte. -
Parallel Computer Architecture and Programming CMU / 清华 大学
Lecture 20: Addressing the Memory Wall Parallel Computer Architecture and Programming CMU / 清华⼤学, Summer 2017 CMU / 清华⼤学, Summer 2017 Today’s topic: moving data is costly! Data movement limits performance Data movement has high energy cost Many processors in a parallel computer means… ~ 0.9 pJ for a 32-bit foating-point math op * - higher overall rate of memory requests ~ 5 pJ for a local SRAM (on chip) data access - need for more memory bandwidth to avoid ~ 640 pJ to load 32 bits from LPDDR memory being bandwidth bound Core Core Memory bus Memory Core Core CPU * Source: [Han, ICLR 2016], 45 nm CMOS assumption CMU / 清华⼤学, Summer 2017 Well written programs exploit locality to avoid redundant data transfers between CPU and memory (Key idea: place frequently accessed data in caches/buffers near processor) Core L1 Core L1 L2 Memory Core L1 Core L1 ▪ Modern processors have high-bandwidth (and low latency) access to on-chip local storage - Computations featuring data access locality can reuse data in this storage ▪ Common software optimization technique: reorder computation so that cached data is accessed many times before it is evicted (“blocking”, “loop fusion”, etc.) ▪ Performance-aware programmers go to great effort to improve the cache locality of programs - What are good examples from this class? CMU / 清华⼤学, Summer 2017 Example 1: restructuring loops for locality Program 1 void add(int n, float* A, float* B, float* C) { for (int i=0; i<n; i++) Two loads, one store per math op C[i] = A[i] + B[i]; } (arithmetic intensity = 1/3) void mul(int -
MRAM (Magnetoresistive Random Access Memory)
MRAM (MagnetoResistive Random Access Memory) By : Dhruv Dani 200601163 Shitij Kumar 200601084 Team - N Flow of Presentation Current Memory Technologies Riddles Introduction Principle, Structure and Working Working Modes Schematic Overview MRAM v/s Other Memory Elements Applications in Embedded Systems Case Studies Supported Microcontrollers and Companies Constraints References Current Memory Technologies Volatile When the power is switched off the information is lost. Restarting: programs and data need to be reloaded resulting in increase of idle time. Non -Volatile Can retain stored information permanently Stores information that does not require frequent changing. Read/Write/Erase cycles consume a lot of time. Commonly Known Memories Volatile – Static RAM (SRAM), Dynamic RAM (DRAM) Non –Volatile – Flash, EEPROM Riddle - 1 A car component manufacturing company ‘X’ has to built Air Bag systems for a range of cars. The requisites of building such a system are that it has to interact with the various sensors which detect and record passenger weight and are employed in other safety devices on the vehicle which perform various crucial tasks like detecting the impact of the possible collision. Such a real time system requires the memory to be susceptible to continuous reads, writes and overwrites in each clocked interval. As an embedded engineer for this company X which kind of memory would you use to implement such a system? Riddle - 2 The Defense Research and Development Organization of a nation ‘C’ has to build a system which can be employed by them for their military and aerospace applications. These systems at present require constant power supply to maintain various kinds databases consisting of confidential information. -
Unit 5: Memory Organizations
Memory Organizations Unit 5: Memory Organizations Introduction This unit considers the organization of a computer's memory system. The characteristics of the most important storage technologies are described in detail. Basically memories are classified as main memory and secondary memory. Main memory with many different categories are described in Lesson 1. Lesson 2 focuses the secondary memory including the details of floppy disks and hard disks. Lesson 1: Main Memory 1.1 Learning Objectives On completion of this lesson you will be able to : • describe the memory organization • distinguish between ROM, RAM, PROM, EEPROM and • other primary memory elements. 1.2 Organization Computer systems combine binary digits to form groups called words. The size of the word varies from system to system. Table 5.1 illustrates the current word sizes most commonly used with the various computer systems. Two decades ago, IBM introduced their 8-bit PC. This was Memory Organization followed a few years later by the 16-bit PC AT microcomputer, and already it has been replaced with 32- and 64-bit systems. The machine with increased word size is generally faster because it can process more bits of information in the same time span. The current trend is in the direction of the larger word size. Microcomputer main memories are generally made up of many individual chips and perform different functions. The ROM, RAM, Several types of semi- PROM, and EEPROM memories are used in connection with the conductor memories. primary memory of a microcomputers. The main memory generally store computer words as multiple of bytes; each byte consisting of eight bits. -
Open Poremba-Dissertation.Pdf
The Pennsylvania State University The Graduate School ARCHITECTING BYTE-ADDRESSABLE NON-VOLATILE MEMORIES FOR MAIN MEMORY A Dissertation in Computer Science and Engineering by Matthew Poremba c 2015 Matthew Poremba Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy May 2015 The dissertation of Matthew Poremba was reviewed and approved∗ by the following: Yuan Xie Professor of Computer Science and Engineering Dissertation Co-Advisor, Co-Chair of Committee John Sampson Assistant Professor of Computer Science and Engineering Dissertation Co-Advisor, Co-Chair of Committee Mary Jane Irwin Professor of Computer Science and Engineering Robert E. Noll Professor Evan Pugh Professor Vijaykrishnan Narayanan Professor of Computer Science and Engineering Kennith Jenkins Professor of Electrical Engineering Lee Coraor Associate Professor of Computer Science and Engineering Director of Academic Affairs ∗Signatures are on file in the Graduate School. Abstract New breakthroughs in memory technology in recent years has lead to increased research efforts in so-called byte-addressable non-volatile memories (NVM). As a result, questions of how and where these types of NVMs can be used have been raised. Simultaneously, semiconductor scaling has lead to an increased number of CPU cores on a processor die as a way to utilize the area. This has increased the pressure on the memory system and causing growth in the amount of main memory that is available in a computer system. This growth has escalated the amount of power consumed by the system by the de facto DRAM type memory. Moreover, DRAM memories have run into physical limitations on scalability due to the nature of their operation. -
Hard Disk Drive Specifications Models: 2R015H1 & 2R010H1
Hard Disk Drive Specifications Models: 2R015H1 & 2R010H1 P/N:1525/rev. A This publication could include technical inaccuracies or typographical errors. Changes are periodically made to the information herein – which will be incorporated in revised editions of the publication. Maxtor may make changes or improvements in the product(s) described in this publication at any time and without notice. Copyright © 2001 Maxtor Corporation. All rights reserved. Maxtor®, MaxFax® and No Quibble Service® are registered trademarks of Maxtor Corporation. Other brands or products are trademarks or registered trademarks of their respective holders. Corporate Headquarters 510 Cottonwood Drive Milpitas, California 95035 Tel: 408-432-1700 Fax: 408-432-4510 Research and Development Center 2190 Miller Drive Longmont, Colorado 80501 Tel: 303-651-6000 Fax: 303-678-2165 Before You Begin Thank you for your interest in Maxtor hard drives. This manual provides technical information for OEM engineers and systems integrators regarding the installation and use of Maxtor hard drives. Drive repair should be performed only at an authorized repair center. For repair information, contact the Maxtor Customer Service Center at 800- 2MAXTOR or 408-922-2085. Before unpacking the hard drive, please review Sections 1 through 4. CAUTION Maxtor hard drives are precision products. Failure to follow these precautions and guidelines outlined here may lead to product failure, damage and invalidation of all warranties. 1 BEFORE unpacking or handling a drive, take all proper electro-static discharge (ESD) precautions, including personnel and equipment grounding. Stand-alone drives are sensitive to ESD damage. 2 BEFORE removing drives from their packing material, allow them to reach room temperature. -
A Survey of Circuit Innovations in Ferroelectric Random-Access Memories
A Survey of Circuit Innovations in Ferroelectric Random-Access Memories Ali Sheikholeslami, MEMBER, IEEE, AND P. Glenn Gulak, SENIOR MEMBER, IEEE This paper surveys circuit innovations in ferroelectric memo- and low power consumption and the emergence of new ries at three circuit levels: memory cell, sensing, and architecture. applications such as contactless smart cards and digital A ferroelectric memory cell consists of at least one ferroelectric ca- cameras. pacitor, where binary data are stored, and one or two transistors that either allow access to the capacitor or amplify its content for Table 1 compares ferroelectric memories with elec- a read operation. Once a cell is accessed for a read operation, its trically erasable and programmable read-only memories data are presented in the form of an analog signal to a sense ampli- (EEPROM’s) and Flash memories, two types of floating-gate fier, where it is compared against a reference voltage to determine memories, in terms of density, read-access time, write-access its logic level. time, and the energy consumed in a 32-bit read/write. En- The circuit techniques used to generate the reference voltage must be robust to semiconductor processing variations across the chip joying a mature process technology, EEPROM’s and Flash and the device imperfections of ferroelectric capacitors. We review memories [1], [2] are superior to ferroelectric memories in six methods of generating a reference voltage, two being presented terms of density. Also, they require less power compared to for the first time in this paper. These methods are discussed and ferroelectric memories for read operations, a factor that will evaluated in terms of their accuracy, area overhead, and sensing keep them popular in applications that demand numerous complexity. -
Evaluation of Ferroelectric Materials for Memory Applications
Calhoun: The NPS Institutional Archive Theses and Dissertations Thesis Collection 1990-06 Evaluation of ferroelectric materials for memory applications Josefson, Carl Elof Monterey, California: Naval Postgraduate School http://hdl.handle.net/10945/27767 NAVAL POSTGRADUATE SCHOOL Monterey, California k ?' AT)'0p D T I C I I ELECTE1 '- ' TH SI EVALUATION OF FERROELECTRIC MATERIALS FOR MEMORY APPLICATIONS by Carl Elof Josefson June 1990 Thesis Advisor: R. Panholzer Approved for public release; distribution is unlimited. 91 2 28 056 SECURITY CLASSIFICATION OF THIS PAGE RPRDOUETA I Form Approved REPORT DOCUMENTATION PAGE No. 0704-0188 la. REPORT SECURITY CLASSIFICATION lb. RESTRICTIVE MARKINGS Unclassified 2a. SECURITY CLASSIFICATION AUTHORITY 3. DISTRIBUTION /AVAILABILITY OF REPORT Approved for public release; 2b. DECLASSIFICATION /DOWNGRADING SCHEDULE distribution is unlimited. 4. PERFORMING ORGANIZATION REPORT NUMBER(S) 5. MONITORING ORGANIZATION REPORT NUMBER(S) 6a. NAME OF PERFORMING ORGANIZATION C.j. OFFICE SYMBOL 7a. NAME OF MONITORING ORGANIZATION (If appicable) Naval Postgraduate School 9 Naval Postgraduate School 6c. ADDRESS (City, State, and ZIP Code) 7b. ADDRESS (City, State, and ZIP Code) Monterey, CA 93943-5000 Monterey, CA 93943-5000 Ba. NAME OF FUNDING /SPONSORING 8b. OFFICE SYMBOL 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER ORGANIZATION I (If applicable) 8c. ADDRESS (City, State, and ZIP Code) 10. SOURCE OF FUNDING NUMBERS PROGRAM PROJECT TASK WORK UNIT ELEMENT NO. NO. NO. ACCESSION NO. 11. TITLE (Include Security Classification) Evaluation of Ferroelectric Materials for Memory Applications 12. PERSONAL AUTHOR(S) Carl E. Josefson 13a. TYPE OF REPORT 13b. TIME COVERED 14. DATE OF REPORT (YearMonthDay) 15. PAGE COUNT Master's Thesis FROM TO 1990 June I 97 16. -
Phase Change Materials and Phase Change Memory Simone Raoux , Feng Xiong , Matthias Wuttig , and Eric Pop
Phase change materials and phase change memory Simone Raoux , Feng Xiong , Matthias Wuttig , and Eric Pop Phase change memory (PCM) is an emerging technology that combines the unique properties of phase change materials with the potential for novel memory devices, which can help lead to new computer architectures. Phase change materials store information in their amorphous and crystalline phases, which can be reversibly switched by the application of an external voltage. This article describes the advantages and challenges of PCM. The physical properties of phase change materials that enable data storage are described, and our current knowledge of the phase change processes is summarized. Various designs of PCM devices with their respective advantages and integration challenges are presented. The scaling limits of PCM are addressed, and its performance is compared to competing existing and emerging memory technologies. Finally, potential new applications of phase change devices such as neuromorphic computing and phase change logic are outlined. Introduction Properties of phase change materials Novel information storage concepts have been continuously Phase change materials exist in an amorphous and one or developed throughout history, from cave paintings to print- sometimes several crystalline phases, and they can be rapidly ing, from phonographs to magnetic tape, dynamic random and repeatedly switched between these phases. The switching access memory (DRAM), compact disks (CDs), and fl ash is typically induced by heating through optical pulses or elec- memory, just to name a few. Over the last four decades, silicon trical (Joule) heating. The optical and electronic properties technology has enabled data storage through charge retention can vary signifi cantly between the amorphous and crystalline on metal-oxide-silicon (MOS) capacitive structures. -
FUJITSU LIMITED 7-1, Nishishinjuku 2-Chome, Shinjuku-Ku, Tokyo 163-0721 Tel : +81-3-5322-3353 Fax : +81-3-5322-3386
• FRAM is a registered trademark of Ramtron International Corporation. Other company names and brand names are the trademarks or registered trademarks of their respective owners. Japan Marketing Div., Electronic Devices Shinjuku Dai-ichi Seimei Bldg. FUJITSU LIMITED 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721 http://edevice.fujitsu.com/ Tel : +81-3-5322-3353 Fax : +81-3-5322-3386 North and South America Europe Asia Pacific Korea FUJITSU MICROELECTRONICS FUJITSU MICROELECTRONICS FUJITSU MICROELECTRONICS FUJITSU MICROELECTRONICS AMERICA, INC. EUROPE GmbH ASIA PTE LTD. KOREA LTD. 1250 E. Arques Avenue, M/S 333 Pittlerstrasse 47, #05-08, 151 Lorong Chuan, 1702 KOSMO TOWER, Sunnyvale, CA 94088-3470, USA D-63225 Langen, New Tech Park, 1002 Daechi-Dong, Tel : +1-408-737-5600 Germany Singapore 556741 Kangnam-Gu, Seoul Fax : +1-408-737-5999 Tel : +49-6103-690-0 Tel : +65-6281-0770 135-280, Korea http://www.fma.fujitsu.com/ Fax : +49-6103-690-122 Fax : +65-6281-0220 Tel : +82-02-3484-7100 http://www.fme.fujitsu.com/ http://www.fmal.fujitsu.com/ Fax : +82-02-3484-7111 http://www.fmk.fujitsu.com/ Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. -
A Study About Non-Volatile Memories
Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 29 July 2016 doi:10.20944/preprints201607.0093.v1 1 Article 2 A Study about Non‐Volatile Memories 3 Dileep Kumar* 4 Department of Information Media, The University of Suwon, Hwaseong‐Si South Korea ; [email protected] 5 * Correspondence: [email protected] ; Tel.: +82‐31‐229‐8212 6 7 8 Abstract: This paper presents an upcoming nonvolatile memories (NVM) overview. Non‐volatile 9 memory devices are electrically programmable and erasable to store charge in a location within the 10 device and to retain that charge when voltage supply from the device is disconnected. The 11 non‐volatile memory is typically a semiconductor memory comprising thousands of individual 12 transistors configured on a substrate to form a matrix of rows and columns of memory cells. 13 Non‐volatile memories are used in digital computing devices for the storage of data. In this paper 14 we have given introduction including a brief survey on upcoming NVMʹs such as FeRAM, MRAM, 15 CBRAM, PRAM, SONOS, RRAM, Racetrack memory and NRAM. In future Non‐volatile memory 16 may eliminate the need for comparatively slow forms of secondary storage systems, which include 17 hard disks. 18 Keywords: Non‐volatile Memories; NAND Flash Memories; Storage Memories 19 PACS: J0101 20 21 22 1. Introduction 23 Memory is divided into two main parts: volatile and nonvolatile. Volatile memory loses any 24 data when the system is turned off; it requires constant power to remain viable. Most kinds of 25 random access memory (RAM) fall into this category.