Lecture #8 Power Amplifiers Instructor

Total Page:16

File Type:pdf, Size:1020Kb

Lecture #8 Power Amplifiers Instructor Integrated Technical Education Cluster Banna - At AlAmeeria ‎ © Ahmad El J-601-1448 Electronic Principals Lecture #8 Power Amplifiers Instructor: Dr. Ahmad El-Banna December 2014 Banna Agenda - Introduction © Ahmad El Series-Fed Class A Amplifier 2014 Dec Transformer-Coupled Class A Amplifier , Lec#8 Class B Amplifier Operation & Circuits 1448 , Amplifier Distortion - 601 - Power Transistor Heat Sinking J 2 Class C & Class D Amplifiers INTRODUCTION 3 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Amplifier Classes - • In small-signal amplifiers, the main factors are usually amplification linearity and magnitude of gain. • Large-signal or power amplifiers, on the other hand, primarily provide sufficient power © Ahmad El to an output load to drive a speaker or other power device, typically a few watts to tens of watts. • The main features of a large-signal amplifier are the circuit’s power efficiency, the 2014 maximum amount of power that the circuit is capable of handling, and the impedance Dec matching to the output device. , • Amplifier classes represent the amount the output signal varies over one cycle of operation for a full cycle of input signal. Lec#8 Power Amplifier Classes: 1. Class A: The output signal varies 1448 , for a full 360° of the input signal. - • Bias at the half of the supply 601 - J 2. Class B: provides an output signal varying over one-half the input 4 signal cycle, or for 180° of signal. • Bias at the zero level Banna Amplifier Efficiency - Power Amplifier Classes … 3. Class AB: An amplifier may be biased at a dc level above the zero-base-current level of class B and above one-half the supply voltage level of class A. © Ahmad El 4. Class C: The output of a class C amplifier is biased for operation at less than 180° of the cycle and will operate only with a tuned (resonant) circuit, which provides a full 2014 cycle of operation for the tuned or resonant frequency. Dec , 5. Class D: This operating class is a form of amplifier operation using pulse (digital) signals, which are on for a short interval and off for a longer interval. Lec#8 • The power efficiency of an amplifier, defined as the ratio of power output 1448 , to power input, improves (gets higher) going from class A to class D. - 601 - J 5 SERIES - FED FED CLASS A AMPLIFIER A CLASS 6 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna SERIES-FED CLASS A AMPLIFIER - • DC Bias Operation © Ahmad El 2014 Dec , Lec#8 • AC Operation 1448 , - 601 - J 7 Banna Power Considerations - • The power drawn from the supply is © Ahmad El • Output Power • 2014 Efficiency Dec , Lec#8 • Maximum Efficiency 1448 , - 601 - J 8 N.B.: Example 9 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna AMPLIFIER TRANSFORMER - COUPLED COUPLED CLASS A A CLASS 10 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Transformer Action - • A transformer can increase or decrease voltage or current levels according to its © Ahmad El turns ratio a=N1:N2 • The impedance connected to one side of 2014 a transformer can be made to appear Dec either larger or smaller (step up or step , down) at the other side of the transformer. Lec#8 • Impedance Transformation 1448 , • - Voltage Transformation 601 - J • Current Transformation 11 Banna Operation of Amplifier Stage - • Signal Swing and Output AC Power © Ahmad El 2014 Dec , Lec#8 • Efficiency 1448 , - 601 • - power loss J 12 • Maximum Theoretical Efficiency • Check EXAMPLE 12.4 ! CLASS CLASS B AMPLIFIER AMPLIFIER OPERATION 13 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Push–Pull Amplifier - • Class B operation is provided when the dc bias leaves the transistor biased just off, the transistor turning on when the ac signal is © Ahmad El applied. • This is essentially no bias, and the transistor conducts current for only one-half of the signal 2014 cycle. Dec , • Connection of push–pull amplifier to load Lec#8 • The current drawn from a single 1448 , power supply has the form of a full- - wave rectified signal • whereas that drawn from two power 601 - supplies has the form of a half-wave J rectified signal from each supply. 14 Banna Efficiency & Power Consideration - • Maximum Power Considerations © Ahmad El 2014 • Dec Efficiency , Lec#8 1448 , - 601 - J • Power Dissipated by Output Transistors 15 CLASS CLASS B AMPLIFIER CIRCUITS AMPLIFIER B 16 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Phase - Splitter Circuits Splitter 17 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Class B Amplifier Circuits - • Transformer-Coupled Push–Pull Circuits © Ahmad El 2014 Dec , Lec#8 1448 , - 601 - J 18 Transformers are bulky ! Banna Class B Amplifier Circuits.. - • Complementary-Symmetry Circuits • Complementary-symmetry push–pull circuit using Darlington transistors. © Ahmad El Needs two separate voltage supplies! 2014 Dec , Lec#8 Biasing the transistors in class AB improves this operation 1448 , - 601 - J 19 o higher output current o lower output resistance. Banna Class B Amplifier Circuits… - • Quasi-Complementary Push–Pull Amplifier © Ahmad El o In practical power amplifier circuits, it 2014 is preferable to use npn transistors Dec for both high-current-output devices. , o The push–pull operation is achieved by using complementary transistors Lec#8 (Q 1 and Q2) before the matched npn output transistors ( Q and Q ). 3 4 1448 , - o R can be adjusted to minimize 2 601 - crossover distortion. J o It is the most popular form of power 20 amplifier • Quasi-complementary push–pull transformerless power amplifier. Example 21 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna AMPLIFIER AMPLIFIER DISTORTION 22 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Amplifier Distortion - • A pure sinusoidal signal has a single frequency at which the voltage varies positive and negative by equal amounts. Any signal varying over less than the full 360° cycle is considered to have distortion. © Ahmad El • Distortion can occur because the device characteristic is not linear, in which case non- linear or amplitude distortion occurs. • Distortion can also occur because the circuit elements and devices respond to the input 2014 signal differently at various frequencies, this being frequency distortion. • Dec One technique for describing distorted but period waveforms uses Fourier analysis , • Harmonic Distortion Lec#8 A signal is considered to have harmonic • Power of a Signal Having Distortion distortion when there are harmonic frequency components 1448 , - 601 - J A : amplitude of the fundamental frequency 1 23 An : amplitude of the nth frequency component • Total Harmonic Distortion POWER POWER TRANSISTOR HEAT HEAT TRANSISTOR SINKING 24 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Power Transistor Heat Sinking - • The maximum power handled by a particular device and the © Ahmad El temperature of the transistor junctions are related since the power dissipated by the device 2014 causes an increase in temperature at the junction of the device. Dec , Lec#8 1448 , - 601 - J 25 CLASS C & CLASS CLASS & C D AMPLIFIERS 26 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Class C Amplifier - • Although class A, class AB, and class B amplifiers are most used as power amplifiers, © Ahmad El class D amplifiers are popular because of their very high efficiency. • Class C amplifiers, although not used as audio 2014 amplifiers, do find use in tuned circuits as in Dec communications. , Lec#8 • The tuned circuit in the output, however, will 1448 , provide a full cycle of output signal for the - fundamental or resonant frequency of the tuned 601 - circuit ( L and C tank circuit) of the output. J • This type of operation is therefore limited to use at one fixed frequency, as occurs in a 27 communications circuit, for example. Banna Class D Amplifier - © Ahmad El 2014 Dec , Lec#8 • Class D amplifier is designed to operate with digital or pulse-type signals. 1448 , • An efficiency of over 90% is achieved, making it - desirable in power amplifiers. 601 - • It is necessary to convert any input signal into a J pulse-type waveform before using it to drive a large power load and to convert the signal back 28 into a sinusoidal-type signal to recover the original signal. Banna - • For more details, refer to: • Chapter 12, Electronic Devices and Circuits, Boylestad. © Ahmad El • The lecture is available online at: 2014 • https://speakerdeck.com/ahmad_elbanna Dec • For inquires, send to: , • [email protected] Lec#8 1448 , - 601 - J 29 .
Recommended publications
  • RF CMOS Power Amplifiers: Theory, Design and Implementation the KLUWER INTERNATIONAL SERIES in ENGINEERING and COMPUTER SCIENCE
    RF CMOS Power Amplifiers: Theory, Design and Implementation THE KLUWER INTERNATIONAL SERIES IN ENGINEERING AND COMPUTER SCIENCE ANALOG CIRCUITS AND SIGNAL PROCESSING Consulting Editor: Mohammed Ismail. Ohio State University Related Titles: POWER TRADE-OFFS AND LOW POWER IN ANALOG CMOS ICS M. Sanduleanu, van Tuijl ISBN: 0-7923-7643-9 RF CMOS POWER AMPLIFIERS: THEORY, DESIGN AND IMPLEMENTATION M.Hella, M.Ismail ISBN: 0-7923-7628-5 WIRELESS BUILDING BLOCKS J.Janssens, M. Steyaert ISBN: 0-7923-7637-4 CODING APPROACHES TO FAULT TOLERANCE IN COMBINATION AND DYNAMIC SYSTEMS C. Hadjicostis ISBN: 0-7923-7624-2 DATA CONVERTERS FOR WIRELESS STANDARDS C. Shi, M. Ismail ISBN: 0-7923-7623-4 STREAM PROCESSOR ARCHITECTURE S. Rixner ISBN: 0-7923-7545-9 LOGIC SYNTHESIS AND VERIFICATION S. Hassoun, T. Sasao ISBN: 0-7923-7606-4 VERILOG-2001-A GUIDE TO THE NEW FEATURES OF THE VERILOG HARDWARE DESCRIPTION LANGUAGE S. Sutherland ISBN: 0-7923-7568-8 IMAGE COMPRESSION FUNDAMENTALS, STANDARDS AND PRACTICE D. Taubman, M. Marcellin ISBN: 0-7923-7519-X ERROR CODING FOR ENGINEERS A.Houghton ISBN: 0-7923-7522-X MODELING AND SIMULATION ENVIRONMENT FOR SATELLITE AND TERRESTRIAL COMMUNICATION NETWORKS A.Ince ISBN: 0-7923-7547-5 MULT-FRAME MOTION-COMPENSATED PREDICTION FOR VIDEO TRANSMISSION T. Wiegand, B. Girod ISBN: 0-7923-7497- 5 SUPER - RESOLUTION IMAGING S. Chaudhuri ISBN: 0-7923-7471-1 AUTOMATIC CALIBRATION OF MODULATED FREQUENCY SYNTHESIZERS D. McMahill ISBN: 0-7923-7589-0 MODEL ENGINEERING IN MIXED-SIGNAL CIRCUIT DESIGN S. Huss ISBN: 0-7923-7598-X CONTINUOUS-TIME SIGMA-DELTA MODULATION FOR A/D CONVERSION IN RADIO RECEIVERS L.
    [Show full text]
  • UNIVERSITY of CALIFORNIA, SAN DIEGO CMOS RF Power Amplifier Design Approaches for Wireless Communications a Dissertation Submitt
    UNIVERSITY OF CALIFORNIA, SAN DIEGO CMOS RF Power Amplifier Design Approaches for Wireless Communications A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical Engineering (Electronic Circuits and Systems) by Sataporn Pornpromlikit Committee in charge: Professor Peter M. Asbeck, Chair Professor Prabhakar R. Bandaru Professor Andrew C. Kummel Professor Lawrence E. Larson Professor Paul K.L. Yu 2010 Copyright Sataporn Pornpromlikit, 2010 All rights reserved. The dissertation of Sataporn Pornpromlikit is approved, and it is acceptable in quality and form for publication on micro- film and electronically: Chair University of California, San Diego 2010 iii DEDICATION To my family. iv EPIGRAPH ”Education is what remains after one has forgotten what one has learned in school.” — Albert Einstein v TABLE OF CONTENTS Signature Page................................... iii Dedication...................................... iv Epigraph.......................................v Table of Contents.................................. vi List of Figures.................................... viii List of Tables.................................... xi Acknowledgements................................. xii Vita......................................... xiv Abstract of the Dissertation............................. xv Chapter 1 Introduction.............................1 1.1 CMOS Technology and Scaling...............2 1.2 Toward Fully-Integrated CMOS Transceivers........4 1.3 Power Amplifier Design...................5
    [Show full text]
  • Amplificadores De Sinais Acesso Em: 17 Maio 2018
    Amplificadores de sinais https://www.electronics-tutorials.ws/amplifier/amp_1.html Acesso em: 17 Maio 2018 Sumário • 1. Introduction to the Amplifier • 2. Common Emitter Amplifier • 3. Common Source JFET Amplifier • 4. Amplifier Distortion • 5. Class A Amplifier • 6. Class B Amplifier • 7. Crossover Distortion in Amplifiers • 8. Amplifiers Summary • 9. Emitter Resistance • 10. Amplifier Classes • 11. Transistor Biasing • 12. Input Impedance of an Amplifier • 13. Frequency Response • 14. MOSFET Amplifier • 15. Class AB Amplifier Introduction to the Amplifier An amplifier is an electronic device or circuit which is used to increase the magnitude of the signal applied to its input. Amplifier is the generic term used to describe a circuit which increases its input signal, but not all amplifiers are the same as they are classified according to their circuit configurations and methods of operation. In “Electronics”, small signal amplifiers are commonly used devices as they have the ability to amplify a relatively small input signal, for example from a Sensor such as a photo- device, into a much larger output signal to drive a relay, lamp or loudspeaker for example. There are many forms of electronic circuits classed as amplifiers, from Operational Amplifiers and Small Signal Amplifiers up to Large Signal and Power Amplifiers. The classification of an amplifier depends upon the size of the signal, large or small, its physical configuration and how it processes the input signal, that is the relationship between input signal and current flowing
    [Show full text]
  • Power Amplifiers?
    AAN IINTRODUCTION ON PPOWEROWER AAMPLIFIERSMPLIFIERS Hesam A. Aslanzadeh Prof. Edgar Sánchez-Sinencio Outline Introduction Power Amplifier Classes Linear PAs Switching PAs Lineariziation techniques Input Output Supply 2 IntroductionIntroduction Performance Metrics Why Power Amplifiers? RF Power Amplifier’s vast applications Wireless and wireline communications Output transmitted power is relatively large portion of the total power consumption. Power efficiency of PAs can greatly influence overall power efficiency. 4 Power Amplifier performance metrics Metrics defined in standards Output Power Spectral Mask ACPR (Adjacent Channel Power Ratio) Signal Modulation Metrics not defined in standards PAE (Power Added Efficiency) Drain Efficiency Power Gain IIP3 P1-dB 5 Output Power Power delivered to the load within the band of interest. Load is usually an antenna with Z0 of 50Ω Doesn’t include power contributed by the harmonics or any unwanted spurs V 2 Sinusoidal out Pout = 2RL ∞ 1 T Modulated Signal Pout / avg = ϕ( p) dp = v(t) dt ∫0 T ∫0 6 Probability profile of Modulation: Prob (Pout=p) Output Power Maximum output power varies drastically among different standards Standard Modulation Max. Pout AMPS FM 31 dBm GSM GMSK 36 dBm CDMA O-QPSK 28 dBm DECT GFSK 27 dBm PDC π/4 DQPSK 30 dBm Bluetooth FSK 16 dBm 802.11a OFDM 14-19 dBm 7 802.11b PSK-CCK 16-20 dBm Efficiency Power Added Efficiency; Most common efficiency metric P − P DC ⎯⎯→ RF PAE = out in ×100% PDC Shows how efficiently supply DC power is converted to RF
    [Show full text]
  • Design of Integra Ted Power Amplifier Circuits For
    DESIGN OF INTEGRATED POWER AMPLIFIER CIRCUITS FOR BIOTELEMETRY APPLICATIONS DESIGN OF INTEGRATED POWER AMPLIFIER CIRCUITS FOR BIOTELEMETRY APPLICATIONS By Munir M. EL-Desouki Bachelor's of Applied Science King Fahd University of Petroleum and Minerals, June 2002 A THESIS SUBMITTED TO THE SCHOOL OF GRADUATE STUDIES IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER'S OF APPLIED SCIENCE McMaster University Hamilton, Ontario, Canada © Copyright by Munir M. El-Desouki, January 2006 MASTER OF APPLIED SCIENCE (2006) McMaster University (Electrical and Computer Engineering) Hamilton, Ontario TITLE: Design of Integrated Power Amplifier Circuits for Biotelemetry Applications AUTHOR: Munir M. El-Desouki, B.A.Sc. (King Fahd University of Petroleum and Minerals) SUPERVISORS: Prof. M. Jamal Deen and Dr. Yaser M. Haddara NUMBER OF PAGES: XXV, 139 ii Abstract Over the past few decades, wireless communication systems have experienced rapid advances that demand continuous improvements in wireless transceiver architecture, efficiency and power capabilities. Since the most power consuming block in a transceiver is the power amplifier, it is considered one of the most challenging blocks to design, and thus, it has attracted considerable research interests. However, very little work has addressed low-power designs since most previous research work focused on higher­ power applications. Short-range transceivers are increasingly gaining interest with the emerging low-power wireless applications that have very strict requirements on the size, weight and power consumption of the system. This thesis deals with designing fully-integrated RF power amplifiers with low output power levels as a first step to improving the efficiency of RF transceivers in a 0.18 J.Lm standard CMOS technology.
    [Show full text]
  • Parallel Doherty RF Power Amplifier
    Parallel Doherty RF Power Amplifier For WiMAX Applications by Sumit Bhardwaj A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Master of Science Approved November 2018 by the Graduate Supervisory Committee: Jennifer Kitchen, Chair Bertan Bakkaloglu Sule Ozev ARIZONA STATE UNIVERSITY December 2018 ABSTRACT This work covers the design and implementation of a Parallel Doherty RF Power Amplifier in a GaN HEMT process for medium power macro-cell (16W) base station applications. This work improves the key parameters of a Doherty Power Amplifier including the peak and back-off efficiency, operational instantaneous bandwidth and output power by proposing a Parallel Doherty amplifier architecture. As there is a progression in the wireless communication systems from the first generation to the future 5G systems, there is ever increasing demand for higher data rates which means signals with higher peak-to-average power ratios (PAPR). The present modulation schemes require PAPRs close to 8-10dB. So, there is an urgent need to develop energy efficient power amplifiers that can transmit these high data rate signals. The Doherty Power Amplifier (DPA) is the most common PA architecture in the cellular infrastructure, as it achieves reasonably high back-off power levels with good efficiency. This work advances the DPA architecture by proposing a Parallel Doherty Power Amplifier to broaden the PAs instantaneous bandwidth, designed with frequency range of operation for 2.45 – 2.70 GHz to support WiMAX applications and future broadband signals. i ACKNOWLEDGMENTS I would like to thank my advisor Dr. Jennifer Kitchen for giving me an opportunity to work on RF power amplifiers.
    [Show full text]
  • Lecture # 9 Power Amplifiers (Class a & B)
    Banna Benha University - Faculty of Engineering at Shoubra ECE-312 © Ahmad El Electronic Circuits (A) Lecture # 9 Power Amplifiers (Class A & B) Instructor: December 2014 Dr. Ahmad El-Banna Banna Post Mid-Term Schedule - • Power Amplifiers Week 8 © Ahmad El Week 9 • Oscillators Week 10 • Tuned Amplifiers • Mixers & Modulators 312 Lec#9 , Dec 2014 , - ECE Week 11 • Project Delivery & Oral Exam (Group A) 2 • Project Delivery & Oral Exam (Group B) Banna Agenda - Introduction © Ahmad El Series-Fed Class A Amplifier Transformer-Coupled Class A Amplifier 312 Lec#9 , Dec 2014 , Class B Amplifier Operation - ECE Class B Amplifier Circuits 3 INTRODUCTION 4 ECE-312 , Lec#9 , Dec 2014 © Ahmad El-Banna Banna Amplifier Classes - • In small-signal amplifiers, the main factors are usually amplification linearity and magnitude of gain. • Large-signal or power amplifiers, on the other hand, primarily provide sufficient power to an output load to drive a speaker or other power device, typically a few watts to tens © Ahmad El of watts. • The main features of a large-signal amplifier are the circuit’s power efficiency, the maximum amount of power that the circuit is capable of handling, and the impedance matching to the output device. • Amplifier classes represent the amount the output signal varies over one cycle of operation for a full cycle of input signal. Power Amplifier Classes: 1. Class A: The output signal varies for a full 360° of the input signal. 312 Lec#9 , Dec 2014 , • Bias at the half of the supply - ECE 2. Class B: provides an output signal varying over one-half the input 5 signal cycle, or for 180° of signal.
    [Show full text]
  • Contribution to the Study of Transmitters at Millimeter Frequencies on Emerging and Advanced Technologies Tony Hanna
    Contribution to the study of transmitters at millimeter frequencies on emerging and advanced technologies Tony Hanna To cite this version: Tony Hanna. Contribution to the study of transmitters at millimeter frequencies on emerging and advanced technologies. Other. Université de Bordeaux, 2017. English. NNT : 2017BORD0944. tel-01729094 HAL Id: tel-01729094 https://tel.archives-ouvertes.fr/tel-01729094 Submitted on 12 Mar 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THÈSE PRESENTÉE POUR OBTENIR LE GRADE DE DOCTEUR DE L’UNIVERSITÉ DE BORDEAUX ÉCOLE DOCTORALE DES SCIENCES PHYSIQUES ET DE L’INGÉNIEUR SPECIALITÉ : ÉLECTRONIQUE Tony HANNA Contribution à l’étude de transmetteurs aux fréquences millimétriques sur des technologies émergentes et avancées Sous la direction de : Nathalie DELTIMPLE (Co-encadrant : Sébastien FRÉGONÈSE) Soutenue le 21 décembre 2017 devant le jury composé de : Mme. Patricia DESGREYS Professeur Telecom ParisTech Président M. Fabio COCCETTI Ingénieur HDR RF Microtech Rapporteur M. Hervé BARTHÉLEMY Professeur Université de Toulon
    [Show full text]
  • THAT Corporation 4320 Datasheet
    Pre-trimmed Low-voltage Low-power THAT Corporation Analog Engine® Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS · · Pre-trimmed VCA & RMS detector Companding noise reduction · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs · Low supply current: 3.7mA typ. (5V) · Wireless in-ear monitors · Four opamps · Battery operated dynamics processors · One low-noise opamp (<5nV/rt-Hz) · Compressors · On board PTAT reference · Limiters · Wide dynamic range: 120dB as · AGCs compander · De-essers Description The THAT4320 is a single-chip Analog En- from THAT’s long history and experience with gine® optimized for low-voltage, low-power oper- dbx® technology for noise reduction. However, ation. Incorporating a high-performance voltage- with 22 active pins, the part is extremely flexible controlled amplifier (VCA), RMS-level sensor, and can be configured for a wide range of appli- and four opamps, the surface mount part is cations including single and multi-band aimed at battery-operated audio applications companders, compressors, limiters, AGCs, such as wireless microphones, wireless instru- de-essers, etc. ments and in-ear monitors. The 4320 operates What really sets the 4320 apart is the trans- from a single supply voltage down to +4.5Vdc, parent sound of its Blackmer™ VCA coupled drawing only 3.7mA. with its accurate true-RMS level detector. The IC This IC also works at supply voltages up to is useful in battery-powered mixers, compres- 16Vdc, making it useful in line-operated prod- sor/limiters, ENG devices and other portable au- ucts as well. The VCA is pre-trimmed at wafer dio products.
    [Show full text]
  • Integrated RF Power Amplifier Design in Silicon-Based Technologies
    Integrated RF Power Ampli¯er Design in Silicon-Based Technologies Von der FakultÄatfÄurMathematik, Naturwissenschaften und Informatik der Brandenburgischen Technischen UniversitÄatCottbus zur Erlangung des akademischen Grades Doktor der Ingenieurwissenschaften (Dr.-Ing.) genehmigte Dissertation vorgelegt von Magister Andriy Vasylyev geboren am 04.08.1977 in Wassylkiw (Ukraine) Gutachter: Prof. Dr. Heinrich Klar (TU Berlin) Gutachter: Prof. Dr. Georg BÄock (TU Berlin) Gutachter: Prof. Dr. Peter Weger (BTU Cottbus) Tag der mÄundlichen PrÄufung: 17 Juli 2006 Acknowledgements I would like to express sincere appreciation to my advisor Prof. Dr. Peter Weger for his guidance and support over this work. I am also grateful to Volodymyr Slobodyanyuk, Oleksiy Gerasika, Wojciech Debski and Valentyn Solomko from BTU Design Group(Chair of Circuit Design), Winfried Bakalski, Werner SimbÄurger,Ronald ThÄuringer,Daniel Kehrer, Marc Tiebout, Hans-Dieter Wohlmuth, Herbert Knapp and Mirjana Rest from INFI- NEON Technologies AG, Corporate Research, Department for High Frequency Circuits, Munich for their informative discussions and help during this work. Finally, I would like to take this opportunity to thank my wife Iryna, my daughter Kateryna, my in-laws and my parents, my brother Sergey for their valuable support and indefatigable faith throughout my life. The work presented is done within INTRINSYK research project which is pursued in cooperation with INFINEON Technologies AG, SIEMENS AG, and University of Bochum. ii Abstract This thesis presents the design and implementation of the RF power ampli¯ers in modern silicon based technologies. The main challenge is to include power ampli¯er on a single chip with output power level in watts, operating at high frequencies where the transit frequency (fT ) is just a few times higher than the operating frequency.
    [Show full text]
  • UNIVERSITY of CALIFORNIA Santa Barbara Inp HBT Power Amplifier
    UNIVERSITY OF CALIFORNIA Santa Barbara InP HBT Power Amplifier MMICs toward 0.4W at 220GHz A Dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Thomas Benjamin Reed Committee in charge: Professor Mark Rodwell, Chair Professor Emeritus Stephen Long Professor Robert York Doctor Zach Griffith March 2013 The dissertation of Thomas Benjamin Reed is approved. _____________________________________________________ Zach Griffith _____________________________________________________ Stephen Long _____________________________________________________ Robert York _____________________________________________________ Mark Rodwell, Committee Chair March 2013 InP HBT Power Amplifier MMICs toward 0.4W at 220GHz Copyright © 2013 by Thomas Benjamin Reed iii ACKNOWLEDGEMENTS This work relied on the countless contributions of those that came before. Prof. Mark Rodwell is a driven visionary for the future of electronics. He has been a highly generous advisor. Zach Griffith has a wealth of knowledge in high frequency device, circuit technology, and life. His advice has saved many headaches. Thank you for all your time and hard work to make this SSPA effort successful. I acknowledge committee members Prof. Stephen Long and Prof. Robert York for their valuable experience and expertise. UCSB Rodwell Group Members, including Vibhor Jain, Ashish Baraskar, Evan Lobisser, Andy Carter, Saeid Daneshgar, Hyunchul Park, Johann Rode, Hanwei Chiang, Prateek Choudhary are great colleagues. Ken Ota, Serra Hoagland, and other non-engineers have helped me remain grounded. My family has been a source of strength throughout graduate school. DARPA MTO has provided the funding resources through the HiFIVE pro- gram to pursue these power amplifier MMICs at 220GHz. Finally, Sarah, my wife is a joy.
    [Show full text]
  • (Title of the Thesis)*
    High Efficiency Two-Stage GaN Power Amplifier with Improved Linearity by Amreen Khan A thesis presented to the University of Waterloo in fulfillment of the thesis requirement for the degree of Master of Applied Science in Electrical and Computer Engineering Waterloo, Ontario, Canada, 2013 © Amreen Khan 2013 AUTHOR'S DECLARATION I hereby declare that I am the sole author of this thesis. This is a true copy of the thesis, including any required final revisions, as accepted by my examiners. I understand that my thesis may be made electronically available to the public. ii Abstract The trade-off between linearity and efficiency is the key limiting factor to wideband power amplifier design. Current wireless research focuses much of its effort on building power amplifiers with the two aforementioned criteria going hand in hand to build an optimal design. This thesis investigates the sources of nonlinearity associated with GaN high electron mobility transistors (HEMT), and their subsequent effects on the linearity metrics of the power amplifier. The investigation began with an analysis of the sources of nonlinearity, and then a design-based approach to mitigate those sources of nonlinearity was developed. This design approach was compared with existing trends in power amplifier design. The device technology used in the design was CREE GaN HEMT (45W and 6W). In this report, a systematic approach to designing a two stage power amplifier is discussed, and analyzed for design of linear and highly efficient power amplifiers for base stations. The designed power amplifier consists of two stages: a driver stage and a power stage.
    [Show full text]