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RF CMOS Power Amplifiers: Theory, Design and Implementation the KLUWER INTERNATIONAL SERIES in ENGINEERING and COMPUTER SCIENCE
RF CMOS Power Amplifiers: Theory, Design and Implementation THE KLUWER INTERNATIONAL SERIES IN ENGINEERING AND COMPUTER SCIENCE ANALOG CIRCUITS AND SIGNAL PROCESSING Consulting Editor: Mohammed Ismail. Ohio State University Related Titles: POWER TRADE-OFFS AND LOW POWER IN ANALOG CMOS ICS M. Sanduleanu, van Tuijl ISBN: 0-7923-7643-9 RF CMOS POWER AMPLIFIERS: THEORY, DESIGN AND IMPLEMENTATION M.Hella, M.Ismail ISBN: 0-7923-7628-5 WIRELESS BUILDING BLOCKS J.Janssens, M. Steyaert ISBN: 0-7923-7637-4 CODING APPROACHES TO FAULT TOLERANCE IN COMBINATION AND DYNAMIC SYSTEMS C. Hadjicostis ISBN: 0-7923-7624-2 DATA CONVERTERS FOR WIRELESS STANDARDS C. Shi, M. Ismail ISBN: 0-7923-7623-4 STREAM PROCESSOR ARCHITECTURE S. Rixner ISBN: 0-7923-7545-9 LOGIC SYNTHESIS AND VERIFICATION S. Hassoun, T. Sasao ISBN: 0-7923-7606-4 VERILOG-2001-A GUIDE TO THE NEW FEATURES OF THE VERILOG HARDWARE DESCRIPTION LANGUAGE S. Sutherland ISBN: 0-7923-7568-8 IMAGE COMPRESSION FUNDAMENTALS, STANDARDS AND PRACTICE D. Taubman, M. Marcellin ISBN: 0-7923-7519-X ERROR CODING FOR ENGINEERS A.Houghton ISBN: 0-7923-7522-X MODELING AND SIMULATION ENVIRONMENT FOR SATELLITE AND TERRESTRIAL COMMUNICATION NETWORKS A.Ince ISBN: 0-7923-7547-5 MULT-FRAME MOTION-COMPENSATED PREDICTION FOR VIDEO TRANSMISSION T. Wiegand, B. Girod ISBN: 0-7923-7497- 5 SUPER - RESOLUTION IMAGING S. Chaudhuri ISBN: 0-7923-7471-1 AUTOMATIC CALIBRATION OF MODULATED FREQUENCY SYNTHESIZERS D. McMahill ISBN: 0-7923-7589-0 MODEL ENGINEERING IN MIXED-SIGNAL CIRCUIT DESIGN S. Huss ISBN: 0-7923-7598-X CONTINUOUS-TIME SIGMA-DELTA MODULATION FOR A/D CONVERSION IN RADIO RECEIVERS L. -
Common Drain - Wikipedia, the Free Encyclopedia 10-5-17 下午7:07
Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 Common drain From Wikipedia, the free encyclopedia In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single- stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the transistor serves as the input, the source is the output, and the drain is common to both (input and output), hence its name. The analogous bipolar junction transistor circuit is the common- collector amplifier. In addition, this circuit is used to transform impedances. For example, the Thévenin resistance of a combination of a voltage follower driven by a voltage source with high Thévenin resistance is reduced to only the output resistance of the voltage follower, a small resistance. That resistance reduction makes the combination a more ideal voltage source. Conversely, a voltage follower inserted between a small load resistance and a driving stage presents an infinite load to the driving stage, an advantage in coupling a voltage signal to a small load. Characteristics At low frequencies, the source follower pictured at right has the following small signal characteristics.[1] Voltage gain: Current gain: Input impedance: Basic N-channel JFET source Output impedance: (the parallel notation indicates the impedance follower circuit (neglecting of components A and B that are connected in parallel) biasing details). The variable gm that is not listed in Figure 1 is the transconductance of the device (usually given in units of siemens). References http://en.wikipedia.org/wiki/Common_drain Page 1 of 2 Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 1. -
Lecture #8 Power Amplifiers Instructor
Integrated Technical Education Cluster Banna - At AlAmeeria © Ahmad El J-601-1448 Electronic Principals Lecture #8 Power Amplifiers Instructor: Dr. Ahmad El-Banna December 2014 Banna Agenda - Introduction © Ahmad El Series-Fed Class A Amplifier 2014 Dec Transformer-Coupled Class A Amplifier , Lec#8 Class B Amplifier Operation & Circuits 1448 , Amplifier Distortion - 601 - Power Transistor Heat Sinking J 2 Class C & Class D Amplifiers INTRODUCTION 3 J-601-1448 , Lec#8 , Dec 2014 © Ahmad El-Banna Banna Amplifier Classes - • In small-signal amplifiers, the main factors are usually amplification linearity and magnitude of gain. • Large-signal or power amplifiers, on the other hand, primarily provide sufficient power © Ahmad El to an output load to drive a speaker or other power device, typically a few watts to tens of watts. • The main features of a large-signal amplifier are the circuit’s power efficiency, the 2014 maximum amount of power that the circuit is capable of handling, and the impedance Dec matching to the output device. , • Amplifier classes represent the amount the output signal varies over one cycle of operation for a full cycle of input signal. Lec#8 Power Amplifier Classes: 1. Class A: The output signal varies 1448 , for a full 360° of the input signal. - • Bias at the half of the supply 601 - J 2. Class B: provides an output signal varying over one-half the input 4 signal cycle, or for 180° of signal. • Bias at the zero level Banna Amplifier Efficiency - Power Amplifier Classes … 3. Class AB: An amplifier may be biased at a dc level above the zero-base-current level of class B and above one-half the supply voltage level of class A. -
Notes on BJT & FET Transistors
Phys2303 L.A. Bumm [ver 1.1] Transistors (p1) Notes on BJT & FET Transistors. Comments. The name transistor comes from the phrase “transferring an electrical signal across a resistor.” In this course we will discuss two types of transistors: The Bipolar Junction Transistor (BJT) is an active device. In simple terms, it is a current controlled valve. The base current (IB) controls the collector current (IC). The Field Effect Transistor (FET) is an active device. In simple terms, it is a voltage controlled valve. The gate-source voltage (VGS) controls the drain current (ID). Regions of BJT operation: Cut-off region: The transistor is off. There is no conduction between the collector and the emitter. (IB = 0 therefore IC = 0) Active region: The transistor is on. The collector current is proportional to and controlled by the base current (IC = βIC) and relatively insensitive to VCE. In this region the transistor can be an amplifier. Saturation region: The transistor is on. The collector current varies very little with a change in the base current in the saturation region. The VCE is small, a few tenths of volt. The collector current is strongly dependent on VCE unlike in the active region. It is desirable to operate transistor switches will be in or near the saturation region when in their on state. Rules for Bipolar Junction Transistors (BJTs): • For an npn transistor, the voltage at the collector VC must be greater than the voltage at the emitter VE by at least a few tenths of a volt; otherwise, current will not flow through the collector-emitter junction, no matter what the applied voltage at the base. -
UNIVERSITY of CALIFORNIA, SAN DIEGO CMOS RF Power Amplifier Design Approaches for Wireless Communications a Dissertation Submitt
UNIVERSITY OF CALIFORNIA, SAN DIEGO CMOS RF Power Amplifier Design Approaches for Wireless Communications A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical Engineering (Electronic Circuits and Systems) by Sataporn Pornpromlikit Committee in charge: Professor Peter M. Asbeck, Chair Professor Prabhakar R. Bandaru Professor Andrew C. Kummel Professor Lawrence E. Larson Professor Paul K.L. Yu 2010 Copyright Sataporn Pornpromlikit, 2010 All rights reserved. The dissertation of Sataporn Pornpromlikit is approved, and it is acceptable in quality and form for publication on micro- film and electronically: Chair University of California, San Diego 2010 iii DEDICATION To my family. iv EPIGRAPH ”Education is what remains after one has forgotten what one has learned in school.” — Albert Einstein v TABLE OF CONTENTS Signature Page................................... iii Dedication...................................... iv Epigraph.......................................v Table of Contents.................................. vi List of Figures.................................... viii List of Tables.................................... xi Acknowledgements................................. xii Vita......................................... xiv Abstract of the Dissertation............................. xv Chapter 1 Introduction.............................1 1.1 CMOS Technology and Scaling...............2 1.2 Toward Fully-Integrated CMOS Transceivers........4 1.3 Power Amplifier Design...................5 -
6.117 Lecture 2 (IAP 2020) 1 Agenda
Lecture 2 Intermediate circuit theory, nonlinear components Graphics used with permission from AspenCore (http://electronics-tutorials.ws) 6.117 Lecture 2 (IAP 2020) 1 Agenda 1. Lab 1 review: RC circuits 2. Nonlinear components: diodes, BJTs and MOSFETs 3. Operational amplifiers (op-amps) 4. Audio amplification 5. Lab 2 overview: components and specifications 6.117 Lecture 2 (IAP 2020) 2 Lab 1 review Resistor-capacitor (RC) circuits 6.117 Lecture 2 (IAP 2020) 3 RC charging response • Capacitor voltage Vc grows exponentially close to Vs • Rate of exponential growth defined by resistor value (smaller resistor = faster charging) RC time constant Capacitor voltage 6.117 Lecture 2 (IAP 2020) 4 RC discharging response • Capacitor voltage Vc decays exponentially to 0 • Rate of exponential decay defined by resistor value (smaller resistor = faster discharging) RC time constant Capacitor voltage 6.117 Lecture 2 (IAP 2020) 5 RC transient response 6.117 Lecture 2 (IAP 2020) 6 RC Time constant tables Charging Discharging Percentage of Percentage of Time Constant Time Constant applied voltage applied voltage 0.5 39.3% 0.5 60.7% 0.7 50.3% 0.7 49.7% 1 63.2% 1 36.8% 2 86.5% 2 13.5% 3 95.0% 3 5.0% 4 98.2% 4 1.8% 5 99.3% 5 0.7% 6.117 Lecture 2 (IAP 2020) 7 Filtering • Filter: Circuit whose response depends on the frequency of the input • Reactance: “Effective resistance” of a capacitor, varies inversely with frequency • Can construct a voltage divider using a capacitor as a “resistor” to exploit this property 6.117 Lecture 2 (IAP 2020) 8 Types of filters 1 LPF 푓 = 퐻푧 푐 2휋푅퐶 1 HPF 푓 = 퐻푧 푐 2휋푅퐶 1 푓 = 퐻푧 퐻 2휋푅 퐶 BPF 1 1 1 푓퐿 = 퐻푧 2휋푅2퐶2 6.117 Lecture 2 (IAP 2020) 9 Nonlinear components Diodes, BJTs and MOSFETs 6.117 Lecture 2 (IAP 2020) 10 Linear vs. -
Lecture 33 Multistage Amplifiers (Cont.)
Lecture 33 Multistage Amplifiers (Cont.) DC Coupling: General Trends * Goal: want both input and output to be “centered” at halfway between the positive and negative supplies (or ground, for a single supply) -- in order to have maximum possible swing at the input and at the output. Summary of DC shifts through the single stages: BJT Amp. npn version Type CE positive CB positive CC negative* MOS Amp. n-channel p-channel Type version version CS positive negative CG positive negative CD negative* positive* The DC voltage shifts for CC/CD stages are set by the VBE = 0.7 V drop or by the VGS of the transistor and can be specified by the designer. EE 105 Fall 2001 Lecture 33 DC Coupling Example * Common drain - common collector cascade (infinite input resistance, fairly low output resistance, unity voltage gain ... reasonable voltage buffer) For CC stage, the optimum output voltage of 2.5 V (centered between + 5 V and ground for maximum swing) --> VIN2 = DC input of CC amp = 2.5 + 0.7 V = 3.2 V The DC of the n-channel CD amplifier is then: VIN = DC input of CD amp = VIN2 + VGS1 = 3.2 V + 1.5 V = 4.7 V where we have assumed that VGS1 = 1.5 V as a typical gate-source voltage (actual number comes from ISUP1and (W/L)). * too close to the supply voltage -- input DC level should be centered at or near 2.5 V. EE 105 Fall 2001 Lecture 33 DC Biasing Example (Cont.) * Solution: use p-channel CD amplifier since it shifts the DC level in the positive direction from input to output Selection of large (W/L) for the p-channel --> input DC level can be adjusted closer to 2.5 V. -
Power Amplifiers?
AAN IINTRODUCTION ON PPOWEROWER AAMPLIFIERSMPLIFIERS Hesam A. Aslanzadeh Prof. Edgar Sánchez-Sinencio Outline Introduction Power Amplifier Classes Linear PAs Switching PAs Lineariziation techniques Input Output Supply 2 IntroductionIntroduction Performance Metrics Why Power Amplifiers? RF Power Amplifier’s vast applications Wireless and wireline communications Output transmitted power is relatively large portion of the total power consumption. Power efficiency of PAs can greatly influence overall power efficiency. 4 Power Amplifier performance metrics Metrics defined in standards Output Power Spectral Mask ACPR (Adjacent Channel Power Ratio) Signal Modulation Metrics not defined in standards PAE (Power Added Efficiency) Drain Efficiency Power Gain IIP3 P1-dB 5 Output Power Power delivered to the load within the band of interest. Load is usually an antenna with Z0 of 50Ω Doesn’t include power contributed by the harmonics or any unwanted spurs V 2 Sinusoidal out Pout = 2RL ∞ 1 T Modulated Signal Pout / avg = ϕ( p) dp = v(t) dt ∫0 T ∫0 6 Probability profile of Modulation: Prob (Pout=p) Output Power Maximum output power varies drastically among different standards Standard Modulation Max. Pout AMPS FM 31 dBm GSM GMSK 36 dBm CDMA O-QPSK 28 dBm DECT GFSK 27 dBm PDC π/4 DQPSK 30 dBm Bluetooth FSK 16 dBm 802.11a OFDM 14-19 dBm 7 802.11b PSK-CCK 16-20 dBm Efficiency Power Added Efficiency; Most common efficiency metric P − P DC ⎯⎯→ RF PAE = out in ×100% PDC Shows how efficiently supply DC power is converted to RF -
Design of Integra Ted Power Amplifier Circuits For
DESIGN OF INTEGRATED POWER AMPLIFIER CIRCUITS FOR BIOTELEMETRY APPLICATIONS DESIGN OF INTEGRATED POWER AMPLIFIER CIRCUITS FOR BIOTELEMETRY APPLICATIONS By Munir M. EL-Desouki Bachelor's of Applied Science King Fahd University of Petroleum and Minerals, June 2002 A THESIS SUBMITTED TO THE SCHOOL OF GRADUATE STUDIES IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER'S OF APPLIED SCIENCE McMaster University Hamilton, Ontario, Canada © Copyright by Munir M. El-Desouki, January 2006 MASTER OF APPLIED SCIENCE (2006) McMaster University (Electrical and Computer Engineering) Hamilton, Ontario TITLE: Design of Integrated Power Amplifier Circuits for Biotelemetry Applications AUTHOR: Munir M. El-Desouki, B.A.Sc. (King Fahd University of Petroleum and Minerals) SUPERVISORS: Prof. M. Jamal Deen and Dr. Yaser M. Haddara NUMBER OF PAGES: XXV, 139 ii Abstract Over the past few decades, wireless communication systems have experienced rapid advances that demand continuous improvements in wireless transceiver architecture, efficiency and power capabilities. Since the most power consuming block in a transceiver is the power amplifier, it is considered one of the most challenging blocks to design, and thus, it has attracted considerable research interests. However, very little work has addressed low-power designs since most previous research work focused on higher power applications. Short-range transceivers are increasingly gaining interest with the emerging low-power wireless applications that have very strict requirements on the size, weight and power consumption of the system. This thesis deals with designing fully-integrated RF power amplifiers with low output power levels as a first step to improving the efficiency of RF transceivers in a 0.18 J.Lm standard CMOS technology. -
Parallel Doherty RF Power Amplifier
Parallel Doherty RF Power Amplifier For WiMAX Applications by Sumit Bhardwaj A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Master of Science Approved November 2018 by the Graduate Supervisory Committee: Jennifer Kitchen, Chair Bertan Bakkaloglu Sule Ozev ARIZONA STATE UNIVERSITY December 2018 ABSTRACT This work covers the design and implementation of a Parallel Doherty RF Power Amplifier in a GaN HEMT process for medium power macro-cell (16W) base station applications. This work improves the key parameters of a Doherty Power Amplifier including the peak and back-off efficiency, operational instantaneous bandwidth and output power by proposing a Parallel Doherty amplifier architecture. As there is a progression in the wireless communication systems from the first generation to the future 5G systems, there is ever increasing demand for higher data rates which means signals with higher peak-to-average power ratios (PAPR). The present modulation schemes require PAPRs close to 8-10dB. So, there is an urgent need to develop energy efficient power amplifiers that can transmit these high data rate signals. The Doherty Power Amplifier (DPA) is the most common PA architecture in the cellular infrastructure, as it achieves reasonably high back-off power levels with good efficiency. This work advances the DPA architecture by proposing a Parallel Doherty Power Amplifier to broaden the PAs instantaneous bandwidth, designed with frequency range of operation for 2.45 – 2.70 GHz to support WiMAX applications and future broadband signals. i ACKNOWLEDGMENTS I would like to thank my advisor Dr. Jennifer Kitchen for giving me an opportunity to work on RF power amplifiers. -
Lecture # 9 Power Amplifiers (Class a & B)
Banna Benha University - Faculty of Engineering at Shoubra ECE-312 © Ahmad El Electronic Circuits (A) Lecture # 9 Power Amplifiers (Class A & B) Instructor: December 2014 Dr. Ahmad El-Banna Banna Post Mid-Term Schedule - • Power Amplifiers Week 8 © Ahmad El Week 9 • Oscillators Week 10 • Tuned Amplifiers • Mixers & Modulators 312 Lec#9 , Dec 2014 , - ECE Week 11 • Project Delivery & Oral Exam (Group A) 2 • Project Delivery & Oral Exam (Group B) Banna Agenda - Introduction © Ahmad El Series-Fed Class A Amplifier Transformer-Coupled Class A Amplifier 312 Lec#9 , Dec 2014 , Class B Amplifier Operation - ECE Class B Amplifier Circuits 3 INTRODUCTION 4 ECE-312 , Lec#9 , Dec 2014 © Ahmad El-Banna Banna Amplifier Classes - • In small-signal amplifiers, the main factors are usually amplification linearity and magnitude of gain. • Large-signal or power amplifiers, on the other hand, primarily provide sufficient power to an output load to drive a speaker or other power device, typically a few watts to tens © Ahmad El of watts. • The main features of a large-signal amplifier are the circuit’s power efficiency, the maximum amount of power that the circuit is capable of handling, and the impedance matching to the output device. • Amplifier classes represent the amount the output signal varies over one cycle of operation for a full cycle of input signal. Power Amplifier Classes: 1. Class A: The output signal varies for a full 360° of the input signal. 312 Lec#9 , Dec 2014 , • Bias at the half of the supply - ECE 2. Class B: provides an output signal varying over one-half the input 5 signal cycle, or for 180° of signal. -
Contribution to the Study of Transmitters at Millimeter Frequencies on Emerging and Advanced Technologies Tony Hanna
Contribution to the study of transmitters at millimeter frequencies on emerging and advanced technologies Tony Hanna To cite this version: Tony Hanna. Contribution to the study of transmitters at millimeter frequencies on emerging and advanced technologies. Other. Université de Bordeaux, 2017. English. NNT : 2017BORD0944. tel-01729094 HAL Id: tel-01729094 https://tel.archives-ouvertes.fr/tel-01729094 Submitted on 12 Mar 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THÈSE PRESENTÉE POUR OBTENIR LE GRADE DE DOCTEUR DE L’UNIVERSITÉ DE BORDEAUX ÉCOLE DOCTORALE DES SCIENCES PHYSIQUES ET DE L’INGÉNIEUR SPECIALITÉ : ÉLECTRONIQUE Tony HANNA Contribution à l’étude de transmetteurs aux fréquences millimétriques sur des technologies émergentes et avancées Sous la direction de : Nathalie DELTIMPLE (Co-encadrant : Sébastien FRÉGONÈSE) Soutenue le 21 décembre 2017 devant le jury composé de : Mme. Patricia DESGREYS Professeur Telecom ParisTech Président M. Fabio COCCETTI Ingénieur HDR RF Microtech Rapporteur M. Hervé BARTHÉLEMY Professeur Université de Toulon