Chapter 14 Output Stages and Power Amplifiers
14.1 General Considerations 14.2 Emitter Follower as Power Amplifier 14.3 Push-Pull Stage 14.4 Improved Push-Pull Stage 14.5 Large-Signal Considerations 14.6 Short Circuit Protection 14.7 Heat Dissipation 14.8 Efficiency 14.9 Power Amplifier Classes
1 Why Power Amplifiers?
Drive a load with high power.
Cellular phones need 1W of power at the antenna.
Audio systems deliver tens to hundreds of watts of power.
Ordinary Voltage/Current amplifiers are not suitable for such applications
CH 13 Output Stages and Power Amplifiers 2 Chapter Outline
CH 13 Output Stages and Power Amplifiers 3 Power Amplifier Characteristics
Experiences low load resistance.
Delivers large current levels.
Requires large voltage swings.
Draws a large amount of power from supply.
Dissipates a large amount of power, therefore gets “hot”.
CH 13 Output Stages and Power Amplifiers 4 Power Amplifier Performance Metrics
Distortion - Linearity
Power Efficiency
Voltage Rating – Transistor Breakdown voltage
CH 13 Output Stages and Power Amplifiers 5 Emitter Follower Large-Signal Behavior I
Av R L R L1 g m
For RL 8 ,
1/gImC 0.8 , thus, 32.5 mA
As Vin increases Vout also follows and Q1 provides more current.
For Vin=4.8V, Vout=4.0V, IL=500mA, IE1=532.5mA
CH 13 Output Stages and Power Amplifiers 6 Emitter Follower Large-Signal Behavior II
However, as Vin decreases, Vout also decreases, shutting off Q1 and resulting in a constant Vout.
For Vin=0.8V, Vout=0V, IL=0mA, IE1=32.5mA For Vin=0.7V, Vout=-0.1V, IL=12.5mA, IE1=20mA When all current (32.5mA) flows to the load, Vout=-0.26V
CH 13 Output Stages and Power Amplifiers 7 Example 14.1: Emitter Follower
Vin=0.5V, Vout=?
Vout VVVIIin BE1 out, 1 C 1 RL
VVIIBE11 Tln( C / S ) Vout 1 VVIVin Tln 1 out RILS
For VVin 0.5
Vout 211 mV by a few iterations
CH 13 Output Stages and Power Amplifiers 8 Example 14.1: Emitter Follower
For what Vin, Q1 carries only 1% of I1?
IC1 VVIIRinTCL ln 11 IS
For II0.01C11
Vin 390 mV
CH 13 Output Stages and Power Amplifiers 9 Linearity of an Emitter Follower
As Vin decreases the output waveform will be clipped, introducing nonlinearity in I/O characteristics.
CH 13 Output Stages and Power Amplifiers 10 Push-Pull Stage
As Vin increases, Q1 is on and pushes current into RL.
As Vin decreases, Q2 is on and pulls current out of RL.
CH 13 Output Stages and Power Amplifiers 11 Example 14.2: I/O Characteristics for Large Vin
Vout = Vin-VBE1 for large +Vin
Vout = Vin+|VBE2| for large -Vin
For positive Vin, Q1 shifts the output down and for negative Vin, Q2 shifts the output up.
CH 13 Output Stages and Power Amplifiers 12 Overall I/O Characteristics of Push-Pull Stage
However, for small Vin, there is a “dead zone” (both Q1 and Q2 are off) in the I/O characteristic, resulting in gross nonlinearity.
CH 13 Output Stages and Power Amplifiers 13 Example 14.3: Small-Signal Gain of Push-Pull Stage
The push-pull stage exhibits a gain that tends to unity when
either Q1 or Q2 is on.
When Vin is very small, the gain drops to zero.
CH 13 Output Stages and Power Amplifiers 14 Example 14.4: Sinusoidal Response of Push-Pull Stage
For large Vin, the output follows the input with a fixed DC offset, however as Vin becomes small the output drops to zero and causes “Crossover Distortion.”
CH 13 Output Stages and Power Amplifiers 15 Improved Push-Pull Stage
VB = VBE1 + |VBE2|
With a battery of VB inserted between the bases of Q1 and Q2, the dead zone is eliminated.
CH 13 Output Stages and Power Amplifiers 16 Implementation of VB
Since VB=VBE1+|VBE2|, a natural choice would be two diodes in series.
I1 in figure (b) is used to bias the diodes and Q1. CH 13 Output Stages and Power Amplifiers 17 Example 14.6: Current Flow I
IIIIinBB112
Iin
Usually IIVB12 B unless out 0
IVin flows even when out = 0.
CH 13 Output Stages and Power Amplifiers 18 Example 14.8: Current Flow II
VVDBE1 → VVoutin
IVIIin0 when out 0 if 12
CH 13 Output Stages and Power Amplifiers 19 Addition of CE Stage
A CE stage (predriver) is added to provide voltage gain from
the input to the bases of Q1 and Q2. CH 13 Output Stages and Power Amplifiers 20 Bias Point Analysis
Vout=0 VA=0
For bias point analysis for Vout=0, the circuit can be simplified to the one on the right, which resembles a current mirror.
ISQ,1 IICC13 ISD,1 CH 13 Output Stages and Power Amplifiers 21 Small-Signal Analysis
Assuming 2rD is small and (gm1+gm2)RL is much greater than 1,
Av g m4 r 1 r 2 ( 1) R L g r r r r g g 1 R m4 1 2 1 2 m 1 m 2 L
gm4 r 1 r 2 g m 1 g m 2 R L
CH 13 Output Stages and Power Amplifiers 22 Example 14.9: Output Resistance Analysis
1 rrOO34|| Rout gm1 gg mm 21()( g m 2 || r 1 ) r 2
If β is low, the second term of the output resistance will rise, which will be problematic when driving a small resistance. CH 13 Output Stages and Power Amplifiers 23 Example14.10: Biasing
Compute the required bias current.
Predriver (CE stage):AV 5 125uA OutputStage:ARVL 0.8 for 8 60uA 65uA 2 100, II 6.5mA npn pnp C12 C 6.5mA 135uA 11 195uA gm1 g m 2 2 g m 1 g m 2 4
Thus, IICC12 6.5 mA
rr12|| 400 || 200 133
gm4 r 1|| r 2 1 g m 1 g m 2 R L 4 1 gImC44 133 195 μA
CH 13 Output Stages and Power Amplifiers 24 Problem of Base Current
195 µA of base current in Q1 can only support 19.5 mA of collector current, insufficient for high current operation (500 mA for 4 V on 8 ). CH 13 Output Stages and Power Amplifiers 25 Modification of the PNP Emitter Follower
1 Rout 231 gm Instead of having a single PNP as the emitter-follower, it is now
combined with an NPN (Q2), providing a lower output resistance. CH 13 Output Stages and Power Amplifiers 26 Example 14.11: Input Resistance
v R Comparing with the standard EF, out L v 1 11 in R rout L 1 231 gm 1 231 gm 231 gm r 3 r 3
CH 13 Output Stages and Power Amplifiers 27 Example 14.11: Input Resistance
1 RL iin v in v in r 3 1 RL 231 gm
rin3( 2 1) R L r 3
CH 13 Output Stages and Power Amplifiers 28 Additional Bias Current
I1 is added to the base of Q2 to provide an additional bias current to Q3 so the capacitance at the base of Q2 can be charged/discharged quickly. Additional pole at the base of Q2. CH 13 Output Stages and Power Amplifiers 29 Example 14.12: Minimum Vin
MinVin 0 Min VVinBE 2
VVout EB2 VVVoutEBBE32
CH 13 Output Stages and Power Amplifiers 30 Power Amplifier Classes
Class A: High linearity, low efficiency
Class B: High efficiency, low linearity
Class AB: Compromise between Class A and B
CH 13 Output Stages and Power Amplifiers 31 HiFi Design
As Vout becomes more positive, gm rises and Av comes closer to unity, resulting in nonlinearity. Using negative feedback, linearity is improved, providing higher fidelity.
CH 13 Output Stages and Power Amplifiers 32 Short-Circuit Protection
Qs and r are used to “steal” some base current away from Q1 when the output is accidentally shorted to ground, preventing short-circuit damage. CH 13 Output Stages and Power Amplifiers 33 Power transistors
Package and heat sink
Small-signal Transistor Power Transistor in Heat Sink Power Transistor Inside Emitter Follower Power Rating (Class A)
Pull down is done by a current source with huge current!
1 T P I V dt avT 0 C CE 1 T Vtsin I P V Vsin t dt 0 1 CCP TRL 2 VVVPPP IVIVI1 CCCC 1 if 1 RRLL2
Maximum power dissipated across Q1 occurs in the absence of a signal. CH 13 Output Stages and Power Amplifiers 35 Example 14.13: Power Dissipation
Avg Power Dissipated in the Current Source I1
1 T PIIpEE11 Vt V dt sin T 0
IV1 EE
CH 13 Output Stages and Power Amplifiers 36 Push-Pull Stage Power Rating
1 T /2 PIVdt av, NPNCCET 0 1 T /2 Vtsin VVtdt sin P 0 CCP TRL 2 VVVCCPCC VVVPPP RRRLLL 44
No power for half of the period.
CH 13 Output Stages and Power Amplifiers 37 Push-Pull Stage Power Rating
1 T /2 PIVdt av, NPNCCET 0 1 T /2 Vtsin VVtdt sin P 0 CCP TRL 2 VVVCCPCC VVVPPP RRRLLL 44
No power for half of the period.
Maximum power occurs between Vp=0 and 4Vcc/π.
2 VVVCC P CC PVav,max 2 when P 2 RL
CH 13 Output Stages and Power Amplifiers 38 Push-Pull Stage Power Rating
1 T PIVdt av, PNPCCET T /2 1 T Vtsin Vtsin Vdt P T /2 PEE TRL 2 VVVVVVEE PPPEEP RRRLLL 44
PPVVav,, PNPav NPNCCEE when
Maximum power occurs between Vp=0 and 4VCC/π. 2 VVVCC P CC PVav,max 2 when P 2 RL CH 13 Output Stages and Power Amplifiers 39 Heat Sink
Heat sink, provides large surface area to dissipate heat from the chip.
CH 13 Output Stages and Power Amplifiers 40 Thermal Runaway Mitigation
IIDD12 VVVVDDTT12 lnln IIS, DS 1, D 2
IIDD12 VT ln IISDSD, 1 , 2
IICC12 VVVVBEBETT12 lnln IIS, QS 1, Q 2
IICC12 VT ln IISQSQ, 1 , 2
With the same VT , II II DD12 CC12 IIIIS, D 1 S , DS 2, Q 1 S , Q 2
Using diode biasing prevents thermal runaway since the
currents in Q1 and Q2 will track those of D1 and D2 as long as their Is’s track with temperature. CH 13 Output Stages and Power Amplifiers 41 Efficiency
Efficiency is defined as the average power delivered to the load divided by the power drawn from the supply
Power Delivered to Load P out Power Drawn From Supply Voltage PPoutckt
Emitter Follower (Class A)
2 VRPL2 EF 2 VP22 R LCC I11 V PEE VI V
VVPP if IV and1 V EE CC 4VRCCL
Maximum efficiency for EF is 25%.
CH 13 Output Stages and Power Amplifiers 42 Example 14.15: Efficiency of EF
EF designed for full swing operates with half swing.
VP VCC With IVV1 = and EE CC RRLL 2 VRPL2 EF 2 VRIVVIVP22 L11 CC P EE VR2 2 PL 2 VVCCCC VRVVVPLCCPCC22 RRLL Thus, 1 6.7% EF VV /2 P CC 15
CH 13 Output Stages and Power Amplifiers 43 Efficiency
Push-Pull Stage (Class A or AB)
2 VP 2RL PP 2 VVVPPP 2 VCC 24RRLL V P 4 VCC
Maximum efficiency for PP is 78.5%.
CH 13 Output Stages and Power Amplifiers 44 Example 14.16: Efficiency incl. Predriver
IVR1 PL 2 VP 2R L 2VVP CC VP ()VVCC EE RRLL 1 V P 4 VVCCCC 11 V P 11 4 VCC
CH 13 Output Stages and Power Amplifiers 45