Integrated RF Power Amplifier Design in Silicon-Based Technologies
Integrated RF Power Ampli¯er Design in Silicon-Based Technologies Von der FakultÄatfÄurMathematik, Naturwissenschaften und Informatik der Brandenburgischen Technischen UniversitÄatCottbus zur Erlangung des akademischen Grades Doktor der Ingenieurwissenschaften (Dr.-Ing.) genehmigte Dissertation vorgelegt von Magister Andriy Vasylyev geboren am 04.08.1977 in Wassylkiw (Ukraine) Gutachter: Prof. Dr. Heinrich Klar (TU Berlin) Gutachter: Prof. Dr. Georg BÄock (TU Berlin) Gutachter: Prof. Dr. Peter Weger (BTU Cottbus) Tag der mÄundlichen PrÄufung: 17 Juli 2006 Acknowledgements I would like to express sincere appreciation to my advisor Prof. Dr. Peter Weger for his guidance and support over this work. I am also grateful to Volodymyr Slobodyanyuk, Oleksiy Gerasika, Wojciech Debski and Valentyn Solomko from BTU Design Group(Chair of Circuit Design), Winfried Bakalski, Werner SimbÄurger,Ronald ThÄuringer,Daniel Kehrer, Marc Tiebout, Hans-Dieter Wohlmuth, Herbert Knapp and Mirjana Rest from INFI- NEON Technologies AG, Corporate Research, Department for High Frequency Circuits, Munich for their informative discussions and help during this work. Finally, I would like to take this opportunity to thank my wife Iryna, my daughter Kateryna, my in-laws and my parents, my brother Sergey for their valuable support and indefatigable faith throughout my life. The work presented is done within INTRINSYK research project which is pursued in cooperation with INFINEON Technologies AG, SIEMENS AG, and University of Bochum. ii Abstract This thesis presents the design and implementation of the RF power ampli¯ers in modern silicon based technologies. The main challenge is to include power ampli¯er on a single chip with output power level in watts, operating at high frequencies where the transit frequency (fT ) is just a few times higher than the operating frequency.
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