Review of Solid-State Modulators
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The Gyrotrons As Promising Radiation Sources for Thz Sensing and Imaging
applied sciences Review The Gyrotrons as Promising Radiation Sources for THz Sensing and Imaging Toshitaka Idehara 1,2, Svilen Petrov Sabchevski 1,3,* , Mikhail Glyavin 4 and Seitaro Mitsudo 1 1 Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, Japan; idehara@fir.u-fukui.ac.jp or [email protected] (T.I.); mitsudo@fir.u-fukui.ac.jp (S.M.) 2 Gyro Tech Co., Ltd., Fukui 910-8507, Japan 3 Institute of Electronics of the Bulgarian Academy of Science, 1784 Sofia, Bulgaria 4 Institute of Applied Physics, Russian Academy of Sciences, 603950 N. Novgorod, Russia; [email protected] * Correspondence: [email protected] Received: 14 January 2020; Accepted: 28 January 2020; Published: 3 February 2020 Abstract: The gyrotrons are powerful sources of coherent radiation that can operate in both pulsed and CW (continuous wave) regimes. Their recent advancement toward higher frequencies reached the terahertz (THz) region and opened the road to many new applications in the broad fields of high-power terahertz science and technologies. Among them are advanced spectroscopic techniques, most notably NMR-DNP (nuclear magnetic resonance with signal enhancement through dynamic nuclear polarization, ESR (electron spin resonance) spectroscopy, precise spectroscopy for measuring the HFS (hyperfine splitting) of positronium, etc. Other prominent applications include materials processing (e.g., thermal treatment as well as the sintering of advanced ceramics), remote detection of concealed radioactive materials, radars, and biological and medical research, just to name a few. Among prospective and emerging applications that utilize the gyrotrons as radiation sources are imaging and sensing for inspection and control in various technological processes (for example, food production, security, etc). -
Review of Power Sources
RF Power Generation With Klystrons amongst other things Dr. C Lingwood Includes slides by Professor R.G. Carter and A Dexter Engineering Department, Lancaster University, U.K. and The Cockcroft Institute of Accelerator Science and Technology • Basic Klystron Principals • Existing technology • Underrating • Modulation anodes • Other options – IOTS – Magnetrons June 2011 ESS Workshop June 2 IOT June 2011 ESS Workshop June 3 IOT Output gap June 2011 ESS Workshop June 4 Velocity modulation • An un-modulated electron beam passes through a cavity resonator with RF input • Electrons accelerated or retarded according to the phase of the gap voltage: Beam is velocity modulated: • As the beam drifts downstream bunches of electrons are formed as shown in the Applegate diagram • An output cavity placed downstream extracts RF power just as in an IOT • This is a simple 2-cavity klystron • Conduction angle = 180° (Class B) June 2010 CAS RF for Accelerators, Ebeltoft 5 Multi-cavity klystron • Additional cavities are used to increase gain, efficiency and bandwith • Bunches are formed by the first (N-1) cavities • Power is extracted by the Nth cavity • Electron gun is a space- charge limited diode with perveance given by I0 K 3 2 V0 • K × 106 is typically 0.5 - 2.0 • Beam is confined by an axial magnetic field Photo courtesy of Thales Electron Devices June 2010 CAS RF for Accelerators, Ebeltoft 6 Efficiency and Perveance • Second harmonic cavity used to increase bunching • Maximum possible efficiency with second harmonic cavity is approximately 6 e 0.85 -
Comparative Overview of Inductive Output Tubes
! ESS AD Technical Note ! ESS/AD/0033 ! ! ! ! ! ! !!!!!!!!!! ! !!!Accelerator Division ! ! ! ! ! ! ! ! ! ! Comparative Overview of Inductive Output Tubes Rihua Zeng, Anders J. Johansson, Karin Rathsman and Stephen Molloy Influence of the Droop and Ripple of Modulator onRebecca Klystron SeviourOutput June 2011 23 February 2012 I. Introduction An IOT is a beam driven vacuum electronic RF amplifier. This document represents a comparative overview of the Inductive Output Tube (IOT). Starting with an overview of the IOT, we progress to a comparative discussion of the IOT relative to other RF amplifiers, discussing the advantages and limitations within the frame work of the RF amplifier requirements for the ESS. A discussion on the current state of the art in IOTs is presented along with the status of research programmes to develop 352MHz and 704MHz IOT’s. II. Background The Inductive Output Tube (IOT) RF amplifier was first proposed by Haeff in 1938, but not really developed into a working technology until the 1980s. Although primarily developed for the television transmitters, IOTs have been, and currently are, used on a number of international high- powered particle accelerators, such as; Diamond, LANSCE, and CERN. This has created a precedence and expertise in their use for accelerator applications. IOTs are a modified form of conventional coaxial gridded tubes, similar to the tetrode, although modified towards a linear beam structure device, similar to a Klystron. This hybrid construct is sometimes described as a cross between a klystron and a triode, hence Eimacs trade name for IOTs, the Klystrode. A schematic of an IOT, taken from [1], is shown in Figure 1. -
Solid State Modulators – Efficiency Considerations Focussing on Sic Devices –
Eidgenössische Technische Hochschule Zürich Laboratory for High Swiss Federal Institute of Technology Zurich Power Electronic Systems Solid State Modulators – Efficiency Considerations focussing on SiC Devices – J. Biela, S. Stathis, M. Jaritz, and S. Blume www.hpe.ee.ethz.ch / [email protected] Typical Topology of Solid State Pulse Modulator Systems AC/DC rectifier unit DC/DC converter for charging C-bank / voltage adaption Pulse generation unit Load e.g. klystron Constant Power Pulsed Power AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage ⎧⎪⎪⎪⎨⎪⎪⎪⎩ Sometimes integrated V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 2 33 Electronic Systems Typical Topology of Solid State Pulse Modulator Systems Grounded klystron load I Isolation with 50Hz transformer or I Isolated DC-DC converter Typical Isolation AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 3 33 Electronic Systems 29 MW(35MW)/140 µs Modulator for CLIC – System Efficiency – High Power Electronic Systems CLIC System Specifications Output voltage 150:::180 kV Settling time <8 µs Output power (pulsed) 29 MW (- 35 MW) Repetition rate 50 Hz Flat-top length 140 µs Average output power 203 kW (- 245 kW) Flat-top stability (FTS) <0.85 % Pulse to pulse repeatab. <100 ppm Rise time <3 µs 819 klystrons 819 klystrons 15 MW, 142 µs circumferences 15 MW, 142 µs delay loop 73 m drive beam -
Gan Or Gaas, TWT Or Klystron - Testing High Power Amplifiers for RADAR Signals Using Peak Power Meters
Application Note GaN or GaAs, TWT or Klystron - Testing High Power Amplifiers for RADAR Signals using Peak Power Meters Vitali Penso Applications Engineer, Boonton Electronics Abstract Measuring and characterizing pulsed RF signals used in radar applications present unique challenges. Unlike communication signals, pulsed radar signals are “on” for a short time followed by a long “off” period, during “on” time the system transmits anywhere from kilowatts to megawatts of power. The high power pulsing can stress the power amplifier (PA) in a number of ways both during the on/off transitions and during prolonged “on” periods. As new PA device technologies are introduced, latest one being GaN, the behavior of the amplifier needs to be thoroughly tested and evaluated. Given the time domain nature of the pulsed RF signal, the best way to observe the performance of the amplifier is through time domain signal analysis. This article explains why the peak power meter is a must have test instrument for characterizing the behavior of pulsed RF power amplifiers (PA) used in radar systems. Radar Power Amplifier Technology Overview Peak Power Meter for Pulsed RADAR Measurements Before we look at the peak power meter and its capabilities, let’s The most critical analysis of the pulsed RF signal takes place in the look at different technologies used in high power amplifiers (HPA) time domain. Since peak power meters measure, analyze and dis- for RADAR systems, particularly GaN on SiC, and why it has grabbed play the power envelope of a RF signal in the time domain, they the attention over the past decade. -
Arxiv:1701.07063V2 [Physics.Ins-Det] 23 Mar 2017 ACCEPTED by IEEE TRANSACTIONS on PLASMA SCIENCE, MARCH 2017 1
This work has been accepted for publication by IEEE Transactions on Plasma Science. The published version of the paper will be available online at http://ieeexplore.ieee.org. It can be accessed by using the following Digital Object Identifier: 10.1109/TPS.2017.2686648. c 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, collecting new collected works for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. arXiv:1701.07063v2 [physics.ins-det] 23 Mar 2017 ACCEPTED BY IEEE TRANSACTIONS ON PLASMA SCIENCE, MARCH 2017 1 Review of Inductive Pulsed Power Generators for Railguns Oliver Liebfried Abstract—This literature review addresses inductive pulsed the inductor. Therefore, a coil can be regarded as a pressure power generators and their major components. Different induc- vessel with the magnetic field B as a pressurized medium. tive storage designs like solenoids, toroids and force-balanced The corresponding pressure p is related by p = 1 B2 to the coils are briefly presented and their advantages and disadvan- 2µ tages are mentioned. Special emphasis is given to inductive circuit magnetic field B with the permeability µ. The energy density topologies which have been investigated in railgun research such of the inductor is directly linked to the magnetic field and as the XRAM, meat grinder or pulse transformer topologies. One therefore, its maximum depends on the tensile strength of the section deals with opening switches as they are indispensable for windings and the mechanical support. -
The Husir W-Band Transmitter
THE HUSIR W-BAND TRANSMITTER The HUSIR W-Band Transmitter Michael E. MacDonald, James P. Anderson, Roy K. Lee, David A. Gordon, and G. Neal McGrew The HUSIR transmitter leverages technologies The Haystack Ultrawideband Satellite » Imaging Radar (HUSIR) operates at a developed for diverse applications, such as frequency three times higher than and plasma fusion, space instrumentation, and at a bandwidth twice as wide as those of materials science, and combines them to create any other radar contributing to the U.S. Space Surveil- what is, to our knowledge, the most advanced lance Network. Novel transmitter techniques employed to achieve HUSIR’s 92–100 GHz bandwidth include a millimeter-wave radar transmitter in the world. gallium arsenide amplifier, a first-of-its-kind gyrotron Overall, the design goals of the HUSIR transmitter traveling-wave tube (gyro-TWT), the high-power com- were met in terms of power and bandwidth, and bination of gyro-TWT/klystron hybrids, and overmoded waveguide transmission lines in a multiplexed deep- the images collected by HUSIR have validated space test bed. the performance of the transmitter system regarding phase characteristics. At the time of Transmitter Technology this publication, the transmitter has logged more A radar transmitter is simply a high-power microwave amplifier. Nevertheless, as part of a radar system, it is than 4500 hours of trouble-free operation, second only to the antenna in terms of its cost and com- demonstrating the robustness of its design. plexity [1]. The HUSIR transmitter was developed on two complementary paths. The first, funded by the U.S. Air Force, involved the development of a novel vacuum elec- tron device (VED) or “tube”; the second, funded by the Defense Advanced Research Projects Agency (DARPA), leveraged an existing VED design to implement a novel multiplexed transmitter architecture. -
Arecibo 430 Mhz Radar System
file: 430txman 12-98 draft Aug. 31, 2005 Arecibo 430 MHz Radar System Operation and Maintenance Manual Written by Jon Hagen April 2001, 2nd ed. May 2005 1 NOTE With its high-voltage and high-power, and high places, this transmitter is potentially lethal. Proper precautions must be taken to avoid electrical shock, RF exposure, and X-ray exposure. (See Section 22). Emergency Procedure: ELECTRIC SHOCK Neutralize power 1. De-energize the circuit by means of switch or circuit breaker or cut the line by an insulated cutter. 2. Safely remove the victim from contact with the energy source by using dry wood stick, plastic rope, leather belt, blanket or any other non-conductive materials. Call for help 1. Others can help you administer first aid 2. Others can call professional medical help and/or arrange transfer facilities Cardio Pulmonary Resuscitation (CPR) 1. Check victim's ABC A - airway: Clear and open airway by head tilt - chin lift maneuver B - breathing: Check and restore breathing by rescue breathing C- circulation: Check and restore circulation by external chest compression 2. If pulse is present, but not breathing, maintain one rescue breathing (mouth to mouth resuscitation) as long as necessary. 3. If pulse and breathing are absent, give external chest compressions (CPR). 4. If pulse and breathing are present, stop CPR, stabilize the victim. 5. Caution: Only properly trained personnel should administer CPR to avoid further harm to 2 the victim. Administer first aid for shock 1. Keep the victim lying down, warm and comfortable to maintain body heat until medical assistance arrive. -
Small-Signal Amplifier Based on Single-Layer Mos2 Branimir Radisavljevic, Michael B
Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kis Citation: Appl. Phys. Lett. 101, 043103 (2012); doi: 10.1063/1.4738986 View online: http://dx.doi.org/10.1063/1.4738986 View Table of Contents: http://apl.aip.org/resource/1/APPLAB/v101/i4 Published by the American Institute of Physics. Related Articles Possible origins of a time-resolved frequency shift in Raman plasma amplifiers Phys. Plasmas 19, 073103 (2012) Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors Rev. Sci. Instrum. 83, 066107 (2012) Mesoscopic resistor as a self-calibrating quantum noise source Appl. Phys. Lett. 100, 203507 (2012) High-power, stable Ka/V dual-band gyrotron traveling-wave tube amplifier Appl. Phys. Lett. 100, 203502 (2012) Microstrip direct current superconducting quantum interference device radio frequency amplifier: Noise data Appl. Phys. Lett. 100, 152601 (2012) Additional information on Appl. Phys. Lett. Journal Homepage: http://apl.aip.org/ Journal Information: http://apl.aip.org/about/about_the_journal Top downloads: http://apl.aip.org/features/most_downloaded Information for Authors: http://apl.aip.org/authors Downloaded 24 Jul 2012 to 128.178.195.24. Redistribution subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions APPLIED PHYSICS LETTERS 101, 043103 (2012) Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kisa) Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland (Received 16 April 2012; accepted 6 July 2012; published online 23 July 2012) In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. -
Development of 50-Kv 100-Kw Three-Phase Resonant Converter for 95-Ghz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo
6674 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 63, NO. 11, NOVEMBER 2016 Development of 50-kV 100-kW Three-Phase Resonant Converter for 95-GHz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo Abstract—This paper describes the development of a and high power density, the operation of high-power vacuum 50-kV 100-kW cathode power supply (CPS) for the operation devices requires low output voltage ripple with low arc energy. of a 30-kW 95-GHz gyrotron. For stable operation of the gy- This is because the output voltage ripple and the arc energy rotron, the requirements of CPS include low output voltage ripple and low arc energy less than 1% and 10 J, respec- are closely related to the stability of the output power of the tively. Depending on required specifications, a three-phase electron beam and the safety of the device, respectively. It is series-parallel resonant converter (SPRC) is proposed for clear that a higher value of the output filter capacitor allows designing CPS. In addition to high-efficiency performance a lower value of the output voltage ripple. On the other hand, of SPRC, three-phase operation provides the reduction of the energy stored in the power supply output, which may in- the output voltage ripple through a minimized output filter component that is closely related to the arc energy. For al- stantaneously be discharged to vacuum devices because of the lowing symmetrical resonant current from three-phase res- arc, is proportional to the value of the output filter capacitor. In onant inverter, the high-voltage transformers are configured order to achieve low output voltage ripple with low arc energy, as star connection with floated neutral node. -
HY-5948A Hydrogen Triode Thyratron
SUNSTAR传感与控制 http://www.sensor-ic.com/ TEL:0755-83376549 FAX:0755-83376182E-MAIL: [email protected] HY-5948A Hydrogen Triode Thyratron Description The HY-5948A is a hydrogen-filled, triode thyratron. The hydrogen gas fill facilitates reliable operation at moderately-high pulse repetition rates when compared to similar deuterium filled thyratrons. The reservoir is designed to be operated at a nominal setting of 4.0 Vac. High pulse currents are achievable using only free or forced air convection cooling. The tube may be mounted by its mounting flange in any position. Specifications Absolute Ratings (Maximum)(Non-Simultaneous) epy, Peak Forward Anode Voltage (Notes 1, 2, 3) ...................................................................... 25 kV ib, Peak Forward Anode Current (Notes 4, 5) .............................................................................. 5 Ka ibx, Peak Reverse Anode Current (Note 6) .................................................................................. .1 ib epx, Peak Reverse Anode Voltage (Note 6) ............................................................................... 25 kV epy, Min, Minimum Anode Supply Voltage ..............................................................................1 k Vdc tp, Anode Current Pulse Duration (Note 5) ............................................................................. 10μsec Ib, Average Anode Current .................................................................................................... 2.2 Adc Ip, RMS Average Current (Note 9) ........................................................................................47.5 -
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency Isik C. Kizilyalli, Eric P. Carlson, Daniel W. Cunningham, Joseph S. Manser, Yanzhi “Ann” Xu, Alan Y. Liu March 13, 2018 United States Department of Energy Washington, DC 20585 TABLE OF CONTENTS Abstract 2 Introduction 2 Technical Opportunity 2 Application Space 4 Evolution of ARPA-E’s Focused Programs in Power Electronics 6 Broad Exploration of Power Electronics Landscape - ADEPT 7 Solar Photovoltaics Applications – Solar ADEPT 10 Wide-Bandgap Materials and Devices – SWITCHES 11 Addressing Material Challenges - PNDIODES 16 System-Level Advances - CIRCUITS 18 Impacts 21 Conclusions 22 Appendix: ARPA-E Power Electronics Projects 23 ABSTRACT The U.S. Department of Energy’s Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced form factor are required in an increasingly electrified world economy. Fast switching power semiconductor devices are the key to increasing the efficiency and reducing the size of power electronic systems. Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new genera- tion of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics.