The Gyrotrons As Promising Radiation Sources for Thz Sensing and Imaging
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Study of CVD Diamond Layers with Amorphous Carbon Admixture by Raman Scattering Spectroscopy
Materials Science-Poland, 33(4), 2015, pp. 799-805 http://www.materialsscience.pwr.wroc.pl/ DOI: 10.1515/msp-2015-0067 Study of CVD diamond layers with amorphous carbon admixture by Raman scattering spectroscopy ANNA DYCHALSKA1,PIOTR POPIELARSKI2,WOJCIECH FRANKOW´ 2,KAZIMIERZ FABISIAK2,3, KAZIMIERZ PAPROCKI2,MIROSŁAW SZYBOWICZ1∗ 1Faculty of Technical Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan,´ Poland 2Institute of Physics, Kazimierz Wielki University, Powstanc´ ow´ Wielkopolskich 2, 85-090 Bydgoszcz, Poland 3Medical Physics Department, Oncology Center, I. Romanowskiej 2, 85-796 Bydgoszcz, Poland Raman spectroscopy is a most often used standard technique for characterization of different carbon materials. In this work we present the Raman spectra of polycrystalline diamond layers of different quality, synthesized by Hot Filament Chemical Vapor Deposition method (HF CVD). We show how to use Raman spectroscopy for the analysis of the Raman bands to deter- mine the structure of diamond films as well as the structure of amorphous carbon admixture. Raman spectroscopy has become an important technique for the analysis of CVD diamond films. The first-order diamond Raman peak at ca. 1332 cm−1 is an unambiguous evidence for the presence of diamond phase in the deposited layer. However, the existence of non-diamond car- bon components in a CVD diamond layer produces several overlapping peaks in the same wavenumber region as the first order diamond peak. The intensities, wavenumber, full width at half maximum (FWHM) of these bands are dependent on quality of diamond layer which is dependent on the deposition conditions. The aim of the present work is to relate the features of diamond Raman spectra to the features of Raman spectra of non-diamond phase admixture and occurrence of other carbon structures in the obtained diamond thin films. -
Electronic Crosstalk in Aqua MODIS Long-Wave Infrared Photovoltaic Bands
remote sensing Letter Electronic Crosstalk in Aqua MODIS Long-Wave Infrared Photovoltaic Bands Junqiang Sun 1,2,* and Menghua Wang 1 1 NOAA National Environmental Satellite, Data, and Information Service, Center for Satellite Applications and Research, E/RA3, 5830 University Research Ct., College Park, MD 20740, USA; [email protected] 2 Global Science and Technology, 7855 Walker Drive, Suite 200, Greenbelt, MD 20770, USA * Correspondence: [email protected]; Tel.: +1-301-683-3338; Fax: +1-301-863-3301 Academic Editors: Gonzalo Pajares Martinsanz, Clement Atzberger, Richard Müller and Prasad S. Thenkabail Received: 13 July 2016; Accepted: 22 September 2016; Published: 28 September 2016 Abstract: Recent investigations have discovered that Terra MODerate-resolution Imaging Spectroradiometer (MODIS) long-wave infrared (LWIR) photovoltaic (PV) bands, bands 27–30, have strong crosstalk among themselves. The linear model developed to test the electronic crosstalk effect was instrumental in the first discovery of the effect in Terra MODIS band 27, and through subsequent investigations the model and the correction algorithm were tested further and established to be correct. It was shown that the correction algorithm successfully mitigated the anomalous features in the calibration coefficients as well as the severe striping and the long-term drift in the Earth view (EV) retrievals for the affected Terra bands. Here, the examination into Aqua MODIS using the established methodology confirms the existence of significant crosstalk contamination in its four LWIR PV, although the finding shows the overall effect to be of lesser degree. The crosstalk effect is characterized and the crosstalk correction coefficients are derived for all four Aqua LWIR PV bands via analysis of signal contamination in the lunar imagery. -
Silicon Taper Based D-Band Chip to Waveguide Interconnect For
1 Silicon Taper Based D-band Chip to Waveguide Interconnect for Millimeter-wave Systems Ahmed Hassona, Vessen Vassilev, Zhongxia Simon He, Chiara Mariotti, Franz Dielacher and Herbert Zirath wastes silicon area that can be utilized. Another approach is to Abstract— This paper presents a novel interconnect for use a separate transition [4] [5]. Using a separate transition is coupling Millimeter-wave (mmW) signals from integrated crucial from performance perspective, as coupling the RF circuits to air-filled waveguides. The proposed solution is realized through a slot antenna implemented in embedded Wafer Level signal directly to the MMIC from the waveguide causes Ball Grid Array (eWLB) process. The antenna radiates into a waveguide modes to leak into the circuit cavity and hence high-resistivity (HR) silicon taper perpendicular to its plane, affect performance. The drawback of this solution is that it which in turn radiates into an air-filled waveguide. The requires bondwire connections between the waveguide- interconnect achieves a measured average insertion loss of 3.4 dB transition and the MMIC. Using bondwires at frequencies over the frequency range 116-151 GHz. The proposed interconnect is generic and does not require any galvanic beyond 100 GHz requires special compensation techniques [6] contacts. The utilized eWLB packaging process is suitable for because of the high inductive behavior of bondwires at these low-cost high-volume production and allows heterogeneous frequencies. integration with other technologies. This work proposes a This work addresses mmW system integration challenges by straightforward cost-effective high-performance interconnect for utilizing eWLB packaging technology. eWLB packaging mmW integration and thus addressing one of the main challenges facing systems operating beyond 100 GHz. -
A W-Band Spatial Power-Combining Amplifier Using Gan Mmics
A W-Band Spatial Power-Combining Amplifier using GaN MMICs Lorene A. Samoska1, Mark Taylor, Jose Velazco, Andy Fung, Robert Lin, Alejandro Peralta, Rohit Gawande Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA USA [email protected] Abstract — In this paper, we describe a miniature power- shown in red, and the mode forms two central lobes of combiner for monolithic millimetre-wave integrated circuit enhanced field strength. By tapping into these lobes of (MMIC) chips using spatial power-combining with cavity modes. maximum field intensity in the cavity using a cavity probe, we We have designed GaN MMIC power amplifier chips for 94 can couple the field energy into a microstrip mode, which can GHz, and illustrate the concept of the W-Band Spatial Power then be wire-bonded to a MMIC chip in a coplanar waveguide Combining Amplifier (WSPCA). Using 1 Watt, 94 GHz MMIC chips in a two-way cavity mode combiner, we were able to or microstrip configuration. The cavity probe consists of a achieve 2 Watts of output power with 9 dB gain and 15 % PAE. dielectric material with a metal antenna element, similar to a This technique could be extended to high power MMICs and waveguide E-plane probe [7]. To transform the TM110 cavity larger numbers of chips to achieve higher output power in a mode to a rectangular waveguide for testing, a rectangular iris compact size. The applications include earth science radar, but of suitable dimension is used. may be extended to other applications requiring wider bandwidth. Keywords — MMIC, GaN power amplifiers, cavity mode, TM110 I. -
Wireless Backhaul Evolution Delivering Next-Generation Connectivity
Wireless Backhaul Evolution Delivering next-generation connectivity February 2021 Copyright © 2021 GSMA The GSMA represents the interests of mobile operators ABI Research provides strategic guidance to visionaries, worldwide, uniting more than 750 operators and nearly delivering actionable intelligence on the transformative 400 companies in the broader mobile ecosystem, including technologies that are dramatically reshaping industries, handset and device makers, software companies, equipment economies, and workforces across the world. ABI Research’s providers and internet companies, as well as organisations global team of analysts publish groundbreaking studies often in adjacent industry sectors. The GSMA also produces the years ahead of other technology advisory firms, empowering our industry-leading MWC events held annually in Barcelona, Los clients to stay ahead of their markets and their competitors. Angeles and Shanghai, as well as the Mobile 360 Series of For more information about ABI Research’s services, regional conferences. contact us at +1.516.624.2500 in the Americas, For more information, please visit the GSMA corporate +44.203.326.0140 in Europe, +65.6592.0290 in Asia-Pacific or website at www.gsma.com. visit www.abiresearch.com. Follow the GSMA on Twitter: @GSMA. Published February 2021 WIRELESS BACKHAUL EVOLUTION TABLE OF CONTENTS 1. EXECUTIVE SUMMARY ................................................................................................................................................................................5 -
The Husir W-Band Transmitter
THE HUSIR W-BAND TRANSMITTER The HUSIR W-Band Transmitter Michael E. MacDonald, James P. Anderson, Roy K. Lee, David A. Gordon, and G. Neal McGrew The HUSIR transmitter leverages technologies The Haystack Ultrawideband Satellite » Imaging Radar (HUSIR) operates at a developed for diverse applications, such as frequency three times higher than and plasma fusion, space instrumentation, and at a bandwidth twice as wide as those of materials science, and combines them to create any other radar contributing to the U.S. Space Surveil- what is, to our knowledge, the most advanced lance Network. Novel transmitter techniques employed to achieve HUSIR’s 92–100 GHz bandwidth include a millimeter-wave radar transmitter in the world. gallium arsenide amplifier, a first-of-its-kind gyrotron Overall, the design goals of the HUSIR transmitter traveling-wave tube (gyro-TWT), the high-power com- were met in terms of power and bandwidth, and bination of gyro-TWT/klystron hybrids, and overmoded waveguide transmission lines in a multiplexed deep- the images collected by HUSIR have validated space test bed. the performance of the transmitter system regarding phase characteristics. At the time of Transmitter Technology this publication, the transmitter has logged more A radar transmitter is simply a high-power microwave amplifier. Nevertheless, as part of a radar system, it is than 4500 hours of trouble-free operation, second only to the antenna in terms of its cost and com- demonstrating the robustness of its design. plexity [1]. The HUSIR transmitter was developed on two complementary paths. The first, funded by the U.S. Air Force, involved the development of a novel vacuum elec- tron device (VED) or “tube”; the second, funded by the Defense Advanced Research Projects Agency (DARPA), leveraged an existing VED design to implement a novel multiplexed transmitter architecture. -
Small-Signal Amplifier Based on Single-Layer Mos2 Branimir Radisavljevic, Michael B
Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kis Citation: Appl. Phys. Lett. 101, 043103 (2012); doi: 10.1063/1.4738986 View online: http://dx.doi.org/10.1063/1.4738986 View Table of Contents: http://apl.aip.org/resource/1/APPLAB/v101/i4 Published by the American Institute of Physics. Related Articles Possible origins of a time-resolved frequency shift in Raman plasma amplifiers Phys. Plasmas 19, 073103 (2012) Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors Rev. Sci. Instrum. 83, 066107 (2012) Mesoscopic resistor as a self-calibrating quantum noise source Appl. Phys. Lett. 100, 203507 (2012) High-power, stable Ka/V dual-band gyrotron traveling-wave tube amplifier Appl. Phys. Lett. 100, 203502 (2012) Microstrip direct current superconducting quantum interference device radio frequency amplifier: Noise data Appl. Phys. Lett. 100, 152601 (2012) Additional information on Appl. Phys. Lett. Journal Homepage: http://apl.aip.org/ Journal Information: http://apl.aip.org/about/about_the_journal Top downloads: http://apl.aip.org/features/most_downloaded Information for Authors: http://apl.aip.org/authors Downloaded 24 Jul 2012 to 128.178.195.24. Redistribution subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions APPLIED PHYSICS LETTERS 101, 043103 (2012) Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kisa) Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland (Received 16 April 2012; accepted 6 July 2012; published online 23 July 2012) In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. -
Spectrum and the Technological Transformation of the Satellite Industry Prepared by Strand Consulting on Behalf of the Satellite Industry Association1
Spectrum & the Technological Transformation of the Satellite Industry Spectrum and the Technological Transformation of the Satellite Industry Prepared by Strand Consulting on behalf of the Satellite Industry Association1 1 AT&T, a member of SIA, does not necessarily endorse all conclusions of this study. Page 1 of 75 Spectrum & the Technological Transformation of the Satellite Industry 1. Table of Contents 1. Table of Contents ................................................................................................ 1 2. Executive Summary ............................................................................................. 4 2.1. What the satellite industry does for the U.S. today ............................................... 4 2.2. What the satellite industry offers going forward ................................................... 4 2.3. Innovation in the satellite industry ........................................................................ 5 3. Introduction ......................................................................................................... 7 3.1. Overview .................................................................................................................. 7 3.2. Spectrum Basics ...................................................................................................... 8 3.3. Satellite Industry Segments .................................................................................... 9 3.3.1. Satellite Communications .............................................................................. -
Development of 50-Kv 100-Kw Three-Phase Resonant Converter for 95-Ghz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo
6674 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 63, NO. 11, NOVEMBER 2016 Development of 50-kV 100-kW Three-Phase Resonant Converter for 95-GHz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo Abstract—This paper describes the development of a and high power density, the operation of high-power vacuum 50-kV 100-kW cathode power supply (CPS) for the operation devices requires low output voltage ripple with low arc energy. of a 30-kW 95-GHz gyrotron. For stable operation of the gy- This is because the output voltage ripple and the arc energy rotron, the requirements of CPS include low output voltage ripple and low arc energy less than 1% and 10 J, respec- are closely related to the stability of the output power of the tively. Depending on required specifications, a three-phase electron beam and the safety of the device, respectively. It is series-parallel resonant converter (SPRC) is proposed for clear that a higher value of the output filter capacitor allows designing CPS. In addition to high-efficiency performance a lower value of the output voltage ripple. On the other hand, of SPRC, three-phase operation provides the reduction of the energy stored in the power supply output, which may in- the output voltage ripple through a minimized output filter component that is closely related to the arc energy. For al- stantaneously be discharged to vacuum devices because of the lowing symmetrical resonant current from three-phase res- arc, is proportional to the value of the output filter capacitor. In onant inverter, the high-voltage transformers are configured order to achieve low output voltage ripple with low arc energy, as star connection with floated neutral node. -
E-/W-Band Multifunctional Sub-System Specifications
D1.2 E-/W-band multifunctional sub-system specifications Project number: 779305 Project acronym: SERENA gan-on-Silicon Efficient mm-wave euRopean Project title: systEm iNtegration platform Start date of the project: 1st January, 2018 Duration: 36 months Programme: H2020-ICT-2017-1 Deliverable type: Report Deliverable reference number: ICT-31-779305 / D1.2/ 1.0 Work package contributing to the WP1 deliverable: Due date: Jun 2018 – M06 Actual submission date: 2nd July, 2018 Responsible organisation: EAB Editor: Kristoffer Andersson Dissemination level: PU Revision: 1.0 This report outlines the specifications of two high- performance W-band systems: a wireless point-to- point system and a short-range radar system. A first order breakdown of the system specifications to front- Abstract: end sub-system requirements are made. It is found that the front-end sub-system share similar requirements between these two use cases. These requirements will be used for further work on the W- band multifunctional GaN-on-Si MMICS in WP4. Specification, front-end, system, point-to-point, radar, Keywords: W-band The project SERENA has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 779305. D1.2 - E-/W-band multifunctional sub-system specifications Editor Kristoffer Andersson (EAB) Contributors (ordered according to beneficiary numbers) Kristoffer Andersson, Mingquan Bao (EAB) Robert Malmqvist, Rolf Jonsson (FOI) Reviewer Robert Malmqvist (FOI) Disclaimer The information in this document is provided “as is”, and no guarantee or warranty is given that the information is fit for any particular purpose. The content of this document reflects only the author`s view – the European Commission is not responsible for any use that may be made of the information it contains. -
The Origin of Sub-Bands in the Raman D-Band of Graphene
CARBON 50 (2012) 4252– 4258 Available at www.sciencedirect.com journal homepage: www.elsevier.com/locate/carbon The origin of sub-bands in the Raman D-band of graphene Zhiqiang Luo a, Chunxiao Cong a, Jun Zhang a, Qihua Xiong a, Ting Yu a,b,c,* a Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore b Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore c Graphene Research Centre, National University of Singapore, Singapore 117542, Singapore ARTICLE INFO ABSTRACT Article history: In Raman spectroscopy investigations of defective suspended graphene, splitting in the D Received 27 March 2012 band is observed. Four double resonance Raman scattering processes: the outer and inner Accepted 6 May 2012 scattering processes, as well as the scattering processes with electrons first scattered by Available online 14 May 2012 phonons (‘‘phonon-first’’) or by defects (‘‘defect-first’’), are found to be responsible for these features of the D band. The D sub-bands associated with the outer and inner processes merge with increasing defect concentration. However a Stokes/anti-Stokes Raman study indicates that the splitting of the D band due to the separate ‘‘phonon-first’’ and ‘‘defect- first’’ processes is valid for suspended graphene. For graphene samples on a SiO2/Si sub- strate, the sub-bands of D band merge due to the increased Raman broadening parameter resulting from the substrate doping. Moreover, the merging of the sub-bands shows excita- tion energy dependence, which can be understood by considering the energy dependent lifetime and/or scattering rate of photo-excited carriers in the Raman scattering process. -
Novel RF MEMS Devices for W-Band Beam-Steering Front-Ends
Novel RF MEMS Devices for W-Band Beam-Steering Front-Ends Nutapong Somjit MICROSYSTEM TECHNOLOGY LABORATORY SCHOOL OF ELECTRICAL ENGINEERING ROYAL INSTITUTE OF TECHNOLOGY ISBN 978-91-7501-296-4 ISSN 1653-5146 TRITA-EE 2012 : 011 Submitted to the School of Electrical Engineering KTH - Royal Institute of Technology, Stockholm, Sweden in partial fulfillment of the requirements for the degree of Doctor of Philosophy Stockholm 2012 The front cover shows a SEM image of the first prototype of the fabricated three- stage dielectric-block phase shifter composed of 15°, 30°, and 45° stage (left). The different phase-shifts of the silicon block are achieved by tailor-making the block with different etch-hole sizes. The right picture is a SEM image of silicon grass (or black silicon) observed during the 890-µm deep-reactive ion-etch (DRIE) step of the though-silicon holes for the semiconductor-substrate-integrated helical antenna fabrication. The aspect ratio between the etch-depth and the opening area is 22.25. Copyright © 2012 by Nutapong Somjit All rights reserved for the summary part of this thesis, including all pictures and figures, unless otherwise indicated. No part of this publication may be reproduced or transmitted in any form or by any means, without prior permission in writing from the copyright holder. The copyrights for the appended journal papers belong to the publishing houses of the journals concerned. The copyrights for the appended manuscripts belong to their authors. Printed by Universitetsservice US-AB, Stockholm 2012. Thesis for the degree of Doctor of Philosophy at the Royal Institute of Technology, Stockholm, Sweden, 2012.