Radio Frequency Solid State Amplifiers
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The Gyrotrons As Promising Radiation Sources for Thz Sensing and Imaging
applied sciences Review The Gyrotrons as Promising Radiation Sources for THz Sensing and Imaging Toshitaka Idehara 1,2, Svilen Petrov Sabchevski 1,3,* , Mikhail Glyavin 4 and Seitaro Mitsudo 1 1 Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, Japan; idehara@fir.u-fukui.ac.jp or [email protected] (T.I.); mitsudo@fir.u-fukui.ac.jp (S.M.) 2 Gyro Tech Co., Ltd., Fukui 910-8507, Japan 3 Institute of Electronics of the Bulgarian Academy of Science, 1784 Sofia, Bulgaria 4 Institute of Applied Physics, Russian Academy of Sciences, 603950 N. Novgorod, Russia; [email protected] * Correspondence: [email protected] Received: 14 January 2020; Accepted: 28 January 2020; Published: 3 February 2020 Abstract: The gyrotrons are powerful sources of coherent radiation that can operate in both pulsed and CW (continuous wave) regimes. Their recent advancement toward higher frequencies reached the terahertz (THz) region and opened the road to many new applications in the broad fields of high-power terahertz science and technologies. Among them are advanced spectroscopic techniques, most notably NMR-DNP (nuclear magnetic resonance with signal enhancement through dynamic nuclear polarization, ESR (electron spin resonance) spectroscopy, precise spectroscopy for measuring the HFS (hyperfine splitting) of positronium, etc. Other prominent applications include materials processing (e.g., thermal treatment as well as the sintering of advanced ceramics), remote detection of concealed radioactive materials, radars, and biological and medical research, just to name a few. Among prospective and emerging applications that utilize the gyrotrons as radiation sources are imaging and sensing for inspection and control in various technological processes (for example, food production, security, etc). -
RF CMOS Power Amplifiers: Theory, Design and Implementation the KLUWER INTERNATIONAL SERIES in ENGINEERING and COMPUTER SCIENCE
RF CMOS Power Amplifiers: Theory, Design and Implementation THE KLUWER INTERNATIONAL SERIES IN ENGINEERING AND COMPUTER SCIENCE ANALOG CIRCUITS AND SIGNAL PROCESSING Consulting Editor: Mohammed Ismail. Ohio State University Related Titles: POWER TRADE-OFFS AND LOW POWER IN ANALOG CMOS ICS M. Sanduleanu, van Tuijl ISBN: 0-7923-7643-9 RF CMOS POWER AMPLIFIERS: THEORY, DESIGN AND IMPLEMENTATION M.Hella, M.Ismail ISBN: 0-7923-7628-5 WIRELESS BUILDING BLOCKS J.Janssens, M. Steyaert ISBN: 0-7923-7637-4 CODING APPROACHES TO FAULT TOLERANCE IN COMBINATION AND DYNAMIC SYSTEMS C. Hadjicostis ISBN: 0-7923-7624-2 DATA CONVERTERS FOR WIRELESS STANDARDS C. Shi, M. Ismail ISBN: 0-7923-7623-4 STREAM PROCESSOR ARCHITECTURE S. Rixner ISBN: 0-7923-7545-9 LOGIC SYNTHESIS AND VERIFICATION S. Hassoun, T. Sasao ISBN: 0-7923-7606-4 VERILOG-2001-A GUIDE TO THE NEW FEATURES OF THE VERILOG HARDWARE DESCRIPTION LANGUAGE S. Sutherland ISBN: 0-7923-7568-8 IMAGE COMPRESSION FUNDAMENTALS, STANDARDS AND PRACTICE D. Taubman, M. Marcellin ISBN: 0-7923-7519-X ERROR CODING FOR ENGINEERS A.Houghton ISBN: 0-7923-7522-X MODELING AND SIMULATION ENVIRONMENT FOR SATELLITE AND TERRESTRIAL COMMUNICATION NETWORKS A.Ince ISBN: 0-7923-7547-5 MULT-FRAME MOTION-COMPENSATED PREDICTION FOR VIDEO TRANSMISSION T. Wiegand, B. Girod ISBN: 0-7923-7497- 5 SUPER - RESOLUTION IMAGING S. Chaudhuri ISBN: 0-7923-7471-1 AUTOMATIC CALIBRATION OF MODULATED FREQUENCY SYNTHESIZERS D. McMahill ISBN: 0-7923-7589-0 MODEL ENGINEERING IN MIXED-SIGNAL CIRCUIT DESIGN S. Huss ISBN: 0-7923-7598-X CONTINUOUS-TIME SIGMA-DELTA MODULATION FOR A/D CONVERSION IN RADIO RECEIVERS L. -
The Husir W-Band Transmitter
THE HUSIR W-BAND TRANSMITTER The HUSIR W-Band Transmitter Michael E. MacDonald, James P. Anderson, Roy K. Lee, David A. Gordon, and G. Neal McGrew The HUSIR transmitter leverages technologies The Haystack Ultrawideband Satellite » Imaging Radar (HUSIR) operates at a developed for diverse applications, such as frequency three times higher than and plasma fusion, space instrumentation, and at a bandwidth twice as wide as those of materials science, and combines them to create any other radar contributing to the U.S. Space Surveil- what is, to our knowledge, the most advanced lance Network. Novel transmitter techniques employed to achieve HUSIR’s 92–100 GHz bandwidth include a millimeter-wave radar transmitter in the world. gallium arsenide amplifier, a first-of-its-kind gyrotron Overall, the design goals of the HUSIR transmitter traveling-wave tube (gyro-TWT), the high-power com- were met in terms of power and bandwidth, and bination of gyro-TWT/klystron hybrids, and overmoded waveguide transmission lines in a multiplexed deep- the images collected by HUSIR have validated space test bed. the performance of the transmitter system regarding phase characteristics. At the time of Transmitter Technology this publication, the transmitter has logged more A radar transmitter is simply a high-power microwave amplifier. Nevertheless, as part of a radar system, it is than 4500 hours of trouble-free operation, second only to the antenna in terms of its cost and com- demonstrating the robustness of its design. plexity [1]. The HUSIR transmitter was developed on two complementary paths. The first, funded by the U.S. Air Force, involved the development of a novel vacuum elec- tron device (VED) or “tube”; the second, funded by the Defense Advanced Research Projects Agency (DARPA), leveraged an existing VED design to implement a novel multiplexed transmitter architecture. -
Small-Signal Amplifier Based on Single-Layer Mos2 Branimir Radisavljevic, Michael B
Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kis Citation: Appl. Phys. Lett. 101, 043103 (2012); doi: 10.1063/1.4738986 View online: http://dx.doi.org/10.1063/1.4738986 View Table of Contents: http://apl.aip.org/resource/1/APPLAB/v101/i4 Published by the American Institute of Physics. Related Articles Possible origins of a time-resolved frequency shift in Raman plasma amplifiers Phys. Plasmas 19, 073103 (2012) Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors Rev. Sci. Instrum. 83, 066107 (2012) Mesoscopic resistor as a self-calibrating quantum noise source Appl. Phys. Lett. 100, 203507 (2012) High-power, stable Ka/V dual-band gyrotron traveling-wave tube amplifier Appl. Phys. Lett. 100, 203502 (2012) Microstrip direct current superconducting quantum interference device radio frequency amplifier: Noise data Appl. Phys. Lett. 100, 152601 (2012) Additional information on Appl. Phys. Lett. Journal Homepage: http://apl.aip.org/ Journal Information: http://apl.aip.org/about/about_the_journal Top downloads: http://apl.aip.org/features/most_downloaded Information for Authors: http://apl.aip.org/authors Downloaded 24 Jul 2012 to 128.178.195.24. Redistribution subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions APPLIED PHYSICS LETTERS 101, 043103 (2012) Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kisa) Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland (Received 16 April 2012; accepted 6 July 2012; published online 23 July 2012) In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. -
Development of 50-Kv 100-Kw Three-Phase Resonant Converter for 95-Ghz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo
6674 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 63, NO. 11, NOVEMBER 2016 Development of 50-kV 100-kW Three-Phase Resonant Converter for 95-GHz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo Abstract—This paper describes the development of a and high power density, the operation of high-power vacuum 50-kV 100-kW cathode power supply (CPS) for the operation devices requires low output voltage ripple with low arc energy. of a 30-kW 95-GHz gyrotron. For stable operation of the gy- This is because the output voltage ripple and the arc energy rotron, the requirements of CPS include low output voltage ripple and low arc energy less than 1% and 10 J, respec- are closely related to the stability of the output power of the tively. Depending on required specifications, a three-phase electron beam and the safety of the device, respectively. It is series-parallel resonant converter (SPRC) is proposed for clear that a higher value of the output filter capacitor allows designing CPS. In addition to high-efficiency performance a lower value of the output voltage ripple. On the other hand, of SPRC, three-phase operation provides the reduction of the energy stored in the power supply output, which may in- the output voltage ripple through a minimized output filter component that is closely related to the arc energy. For al- stantaneously be discharged to vacuum devices because of the lowing symmetrical resonant current from three-phase res- arc, is proportional to the value of the output filter capacitor. In onant inverter, the high-voltage transformers are configured order to achieve low output voltage ripple with low arc energy, as star connection with floated neutral node. -
Bias Circuits for RF Devices
Bias Circuits for RF Devices Iulian Rosu, YO3DAC / VA3IUL, http://www.qsl.net/va3iul A lot of RF schematics mention: “bias circuit not shown”; when actually one of the most critical yet often overlooked aspects in any RF circuit design is the bias network. The bias network determines the amplifier performance over temperature as well as RF drive. The DC bias condition of the RF transistors is usually established independently of the RF design. Power efficiency, stability, noise, thermal runway, and ease to use are the main concerns when selecting a bias configuration. A transistor amplifier must possess a DC biasing circuit for a couple of reasons. • We would require two separate voltage supplies to furnish the desired class of bias for both the emitter-collector and the emitter-base voltages. • This is in fact still done in certain applications, but biasing was invented so that these separate voltages could be obtained from but a single supply. • Transistors are remarkably temperature sensitive, inviting a condition called thermal runaway. Thermal runaway will rapidly destroy a bipolar transistor, as collector current quickly and uncontrollably increases to damaging levels as the temperature rises, unless the amplifier is temperature stabilized to nullify this effect. Amplifier Bias Classes of Operation Special classes of amplifier bias levels are utilized to achieve different objectives, each with its own distinct advantages and disadvantages. The most prevalent classes of bias operation are Class A, AB, B, and C. All of these classes use circuit components to bias the transistor at a different DC operating current, or “ICQ”. When a BJT does not have an A.C. -
UNIVERSITY of CALIFORNIA, SAN DIEGO CMOS RF Power Amplifier Design Approaches for Wireless Communications a Dissertation Submitt
UNIVERSITY OF CALIFORNIA, SAN DIEGO CMOS RF Power Amplifier Design Approaches for Wireless Communications A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical Engineering (Electronic Circuits and Systems) by Sataporn Pornpromlikit Committee in charge: Professor Peter M. Asbeck, Chair Professor Prabhakar R. Bandaru Professor Andrew C. Kummel Professor Lawrence E. Larson Professor Paul K.L. Yu 2010 Copyright Sataporn Pornpromlikit, 2010 All rights reserved. The dissertation of Sataporn Pornpromlikit is approved, and it is acceptable in quality and form for publication on micro- film and electronically: Chair University of California, San Diego 2010 iii DEDICATION To my family. iv EPIGRAPH ”Education is what remains after one has forgotten what one has learned in school.” — Albert Einstein v TABLE OF CONTENTS Signature Page................................... iii Dedication...................................... iv Epigraph.......................................v Table of Contents.................................. vi List of Figures.................................... viii List of Tables.................................... xi Acknowledgements................................. xii Vita......................................... xiv Abstract of the Dissertation............................. xv Chapter 1 Introduction.............................1 1.1 CMOS Technology and Scaling...............2 1.2 Toward Fully-Integrated CMOS Transceivers........4 1.3 Power Amplifier Design...................5 -
5 Steps to Selecting the Right RF Power Amplifier
modular rf 5 Steps to Selecting the Right RF Power Amplifier Jason Kovatch Sr. Development Engineer AR Modular RF, Bothell WA You need an RF power amplifier. You have measured the power of your signal and it is not enough. You may even have decided on a power level in Watts that you think will meet your needs. Are you ready to shop for an amplifier of that wattage? With so many variations in price, size, and efficiency for amplifiers that are all rated at the same number of Watts many RF amplifier purchasers are unhappy with their selection. Some of the unfortunate results of amplifier selection by Watts include: unacceptable distortion or interference, insufficient gain, premature amplifier failure, and wasted money. Following these 5 steps will help you avoid these mistakes. Step 1 - Know Your Signal Step 2 – Do the Math Step 3 - Window Shopping Step 4 - Compare Apples to Apples Step 5 – Shopping for Bells and Whistles Step 1 – Know Your Signal You need to know 2 things about your signal: what type of modulation is on the signal and the actual Peak power of your signal to be amplified. Knowing the modulation is the most important as it defines broad variations in amplifiers that will provide acceptable performance. Knowing the Peak power of your signal will allow you calculate your gain and/or power requirements, as shown in later steps. Signal Modulation and Power- CW, SSB, FM, and PM are Easy To avoid distortion, amplifiers need to be able to faithfully process your signal’s peak power. -
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency Isik C. Kizilyalli, Eric P. Carlson, Daniel W. Cunningham, Joseph S. Manser, Yanzhi “Ann” Xu, Alan Y. Liu March 13, 2018 United States Department of Energy Washington, DC 20585 TABLE OF CONTENTS Abstract 2 Introduction 2 Technical Opportunity 2 Application Space 4 Evolution of ARPA-E’s Focused Programs in Power Electronics 6 Broad Exploration of Power Electronics Landscape - ADEPT 7 Solar Photovoltaics Applications – Solar ADEPT 10 Wide-Bandgap Materials and Devices – SWITCHES 11 Addressing Material Challenges - PNDIODES 16 System-Level Advances - CIRCUITS 18 Impacts 21 Conclusions 22 Appendix: ARPA-E Power Electronics Projects 23 ABSTRACT The U.S. Department of Energy’s Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced form factor are required in an increasingly electrified world economy. Fast switching power semiconductor devices are the key to increasing the efficiency and reducing the size of power electronic systems. Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new genera- tion of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. -
Ampleon Company Presentation
Microwave Journal Educational Webinar Ampleon Brings RF Power Innovations towards Industrial Heating Market Gerrit Huisman Robin Wesson Klaus Werner Nov, 17, 2016 Amplify the future | 1 Ampleon at a Glance Our Company Our Businesses • European Company / Headquarters in • Building transistors and other RF Power products Nijmegen/Netherlands for over 50 years • 1,250 employees globally in 18 sites • Industry Leader for 35 years, addressing • Worldwide Sales, Application and R&D – Mobile Broadband – Broadcast • Own manufacturing facility – Aerospace & Defense • Partnering with leading external manufacturers – ISM – RF Energy Technologies & Products Customers • Broad LDMOSTaco and GaN technology portfolio Reinier Zwemstra Beltman • Comprehensive package line-up • Chief Operations Head of Sales OutstandingOfficer product consistency Amplify the future | 2 Ampleon and RF Energy • Recognized as thought leader • Co-founder of RF Energy Alliance • Working with the leaders in new application domains Amplify the future | 3 RF Power Industrial market dominated by vacuum tubes • Current solutions mainly based on ‘old’ vacuum tube principles • Somewhat fragmented market with large and many small vendors – TWT (Traveling Wave Tubes) – Klystron – Magnetrons – CFA (Crossed Field Amplifiers) – Gyrotrons Amplify the future | 4 2020 TAM VED’s about ~$1B $1.2B in 2014 TAM VEDS Source ABI research TWT 63% Klystron 17% Gyrotron 3% magnetron Cross Field 15% 2% Not included: domestic magnetrons, Aerospace market Amplify the future | 5 Solid state penetrates the -
50V RF LDMOS an Ideal RF Power Technology for ISM, Broadcast and Commercial Aerospace Applications Freescale.Com/Rfpower I
White Paper 50V RF LDMOS An ideal RF power technology for ISM, broadcast and commercial aerospace applications freescale.com/RFpower I. INTRODUCTION RF laterally diffused MOS (LDMOS) is currently the dominant device technology used in high-power RF power amplifier (PA) applications for frequencies ranging from 1 MHz to greater than 3.5 GHz. Beginning in the early 1990s, LDMOS has gained wide acceptance for cellular infrastructure PA applications, and now is the dominant RF power device technology for cellular infrastructure. This device technology offered significant advantages over the previous incumbent device technology, the silicon bipolar transistor, providing superior linearity, efficiency, gain and lower cost packaging options. LDMOS technology has continued to evolve to meet the ever more demanding requirements of the cellular infrastructure market, achieving higher levels of efficiency, gain, power and operational frequency[1-8]. The LDMOS device structure is highly flexible. While the cellular infrastructure market has standardized on 28–32V operation, several years ago Freescale developed 50V processes for applications outside of cellular infrastructure. These 50V devices are targeted for use in a wide variety of applications where high power density is a key differentiator and include industrial, scientific, medical (ISM), broadcast and commercial aerospace applications. Many of the same attributes that led to the displacement of bipolar transistors from the cellular infrastructure market in the early 1990s are equally valued in the broad RF power market: high power, gain, efficiency and linearity, low cost and outstanding reliability. In addition, the RF power market demands the very high RF ruggedness that LDMOS can deliver. The enhanced ruggedness LDMOS devices available from Freescale can displace not only bipolar devices but VMOS and vacuum tube devices that are still used in some ISM, broadcast and commercial aerospace applications. -
Design and Analysis of Class AB RF Power Amplifier for Wireless Communication Applications
University of Central Florida STARS Retrospective Theses and Dissertations 2002 Design and analysis of class AB RF power amplifier for wireless communication applications Mohamed El-Dakroury University of Central Florida, [email protected] Part of the Systems and Communications Commons Find similar works at: https://stars.library.ucf.edu/rtd University of Central Florida Libraries http://library.ucf.edu This Masters Thesis (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation El-Dakroury, Mohamed, "Design and analysis of class AB RF power amplifier for wireless communication applications" (2002). Retrospective Theses and Dissertations. 1498. https://stars.library.ucf.edu/rtd/1498 DESIGN AND ANALYSIS OF CLASS AB RF POWER AMPLIFIER FOR WIRELESS COMMUNICATION APPLICATIONS by MOHAMED EL-DAKROURY B.SC. Cairo University, Egypt, 1995 A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in the School of Electrical Engineering and Computer Science in the College of Engineering and Computer Science at the University of Central Florida Orlando, Florida Summer term 2002 Major Professor: Dr. Jiann S. Yuan ABSTRACT The Power Amplifier is the most power-consu!}ling. blpqk among the quil~ing blocks of RF transceivers. It is still a difficult problem to design power amplifiers, especially for linear, low voltage operation. Until now power amplifiers for wireless applications is being produced almost in GaAs processes with some exceptions in LDMOS, Si BJT, and SiGe HBT.