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The Gyrotrons As Promising Radiation Sources for Thz Sensing and Imaging
applied sciences Review The Gyrotrons as Promising Radiation Sources for THz Sensing and Imaging Toshitaka Idehara 1,2, Svilen Petrov Sabchevski 1,3,* , Mikhail Glyavin 4 and Seitaro Mitsudo 1 1 Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, Japan; idehara@fir.u-fukui.ac.jp or [email protected] (T.I.); mitsudo@fir.u-fukui.ac.jp (S.M.) 2 Gyro Tech Co., Ltd., Fukui 910-8507, Japan 3 Institute of Electronics of the Bulgarian Academy of Science, 1784 Sofia, Bulgaria 4 Institute of Applied Physics, Russian Academy of Sciences, 603950 N. Novgorod, Russia; [email protected] * Correspondence: [email protected] Received: 14 January 2020; Accepted: 28 January 2020; Published: 3 February 2020 Abstract: The gyrotrons are powerful sources of coherent radiation that can operate in both pulsed and CW (continuous wave) regimes. Their recent advancement toward higher frequencies reached the terahertz (THz) region and opened the road to many new applications in the broad fields of high-power terahertz science and technologies. Among them are advanced spectroscopic techniques, most notably NMR-DNP (nuclear magnetic resonance with signal enhancement through dynamic nuclear polarization, ESR (electron spin resonance) spectroscopy, precise spectroscopy for measuring the HFS (hyperfine splitting) of positronium, etc. Other prominent applications include materials processing (e.g., thermal treatment as well as the sintering of advanced ceramics), remote detection of concealed radioactive materials, radars, and biological and medical research, just to name a few. Among prospective and emerging applications that utilize the gyrotrons as radiation sources are imaging and sensing for inspection and control in various technological processes (for example, food production, security, etc). -
Review of Power Sources
RF Power Generation With Klystrons amongst other things Dr. C Lingwood Includes slides by Professor R.G. Carter and A Dexter Engineering Department, Lancaster University, U.K. and The Cockcroft Institute of Accelerator Science and Technology • Basic Klystron Principals • Existing technology • Underrating • Modulation anodes • Other options – IOTS – Magnetrons June 2011 ESS Workshop June 2 IOT June 2011 ESS Workshop June 3 IOT Output gap June 2011 ESS Workshop June 4 Velocity modulation • An un-modulated electron beam passes through a cavity resonator with RF input • Electrons accelerated or retarded according to the phase of the gap voltage: Beam is velocity modulated: • As the beam drifts downstream bunches of electrons are formed as shown in the Applegate diagram • An output cavity placed downstream extracts RF power just as in an IOT • This is a simple 2-cavity klystron • Conduction angle = 180° (Class B) June 2010 CAS RF for Accelerators, Ebeltoft 5 Multi-cavity klystron • Additional cavities are used to increase gain, efficiency and bandwith • Bunches are formed by the first (N-1) cavities • Power is extracted by the Nth cavity • Electron gun is a space- charge limited diode with perveance given by I0 K 3 2 V0 • K × 106 is typically 0.5 - 2.0 • Beam is confined by an axial magnetic field Photo courtesy of Thales Electron Devices June 2010 CAS RF for Accelerators, Ebeltoft 6 Efficiency and Perveance • Second harmonic cavity used to increase bunching • Maximum possible efficiency with second harmonic cavity is approximately 6 e 0.85 -
MW6IC2420NBR1 2450 Mhz, 20 W, 28 V CW RF LDMOS Integrated
Freescale Semiconductor Document Number: MW6IC2420N Technical Data Rev. 3, 12/2010 RF LDMOS Integrated Power Amplifier MW6IC2420NBR1 The MW6IC2420NB integrated circuit is designed with on--chip matching that makes it usable at 2450 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. 2450 MHz, 20 W, 28 V Driver Applications CW • Typical CW Performance at 2450 MHz: VDD =28Volts,IDQ1 = 210 mA, RF LDMOS INTEGRATED POWER I = 370 mA, P = 20 Watts DQ2 out AMPLIFIER Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts CW Pout. Features Y • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection CASE 1329--09 • 225°C Capable Plastic Package TO--272 WB--16 • RoHS Compliant PLASTIC • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel GND 1 16 GND VDS1 2 NC 3 15 NC NC 4 LIFETIME BU VDS1 NC 5 RF / RFin 6 14 out RFin RFout/VDS2 VDS2 NC 7 VGS1 8 VGS2 9 VGS1 Quiescent Current VDS1 10 13 NC (1) VGS2 Temperature Compensation GND 11 12 GND VDS1 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. -
Comparative Overview of Inductive Output Tubes
! ESS AD Technical Note ! ESS/AD/0033 ! ! ! ! ! ! !!!!!!!!!! ! !!!Accelerator Division ! ! ! ! ! ! ! ! ! ! Comparative Overview of Inductive Output Tubes Rihua Zeng, Anders J. Johansson, Karin Rathsman and Stephen Molloy Influence of the Droop and Ripple of Modulator onRebecca Klystron SeviourOutput June 2011 23 February 2012 I. Introduction An IOT is a beam driven vacuum electronic RF amplifier. This document represents a comparative overview of the Inductive Output Tube (IOT). Starting with an overview of the IOT, we progress to a comparative discussion of the IOT relative to other RF amplifiers, discussing the advantages and limitations within the frame work of the RF amplifier requirements for the ESS. A discussion on the current state of the art in IOTs is presented along with the status of research programmes to develop 352MHz and 704MHz IOT’s. II. Background The Inductive Output Tube (IOT) RF amplifier was first proposed by Haeff in 1938, but not really developed into a working technology until the 1980s. Although primarily developed for the television transmitters, IOTs have been, and currently are, used on a number of international high- powered particle accelerators, such as; Diamond, LANSCE, and CERN. This has created a precedence and expertise in their use for accelerator applications. IOTs are a modified form of conventional coaxial gridded tubes, similar to the tetrode, although modified towards a linear beam structure device, similar to a Klystron. This hybrid construct is sometimes described as a cross between a klystron and a triode, hence Eimacs trade name for IOTs, the Klystrode. A schematic of an IOT, taken from [1], is shown in Figure 1. -
Solid State Modulators – Efficiency Considerations Focussing on Sic Devices –
Eidgenössische Technische Hochschule Zürich Laboratory for High Swiss Federal Institute of Technology Zurich Power Electronic Systems Solid State Modulators – Efficiency Considerations focussing on SiC Devices – J. Biela, S. Stathis, M. Jaritz, and S. Blume www.hpe.ee.ethz.ch / [email protected] Typical Topology of Solid State Pulse Modulator Systems AC/DC rectifier unit DC/DC converter for charging C-bank / voltage adaption Pulse generation unit Load e.g. klystron Constant Power Pulsed Power AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage ⎧⎪⎪⎪⎨⎪⎪⎪⎩ Sometimes integrated V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 2 33 Electronic Systems Typical Topology of Solid State Pulse Modulator Systems Grounded klystron load I Isolation with 50Hz transformer or I Isolated DC-DC converter Typical Isolation AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 3 33 Electronic Systems 29 MW(35MW)/140 µs Modulator for CLIC – System Efficiency – High Power Electronic Systems CLIC System Specifications Output voltage 150:::180 kV Settling time <8 µs Output power (pulsed) 29 MW (- 35 MW) Repetition rate 50 Hz Flat-top length 140 µs Average output power 203 kW (- 245 kW) Flat-top stability (FTS) <0.85 % Pulse to pulse repeatab. <100 ppm Rise time <3 µs 819 klystrons 819 klystrons 15 MW, 142 µs circumferences 15 MW, 142 µs delay loop 73 m drive beam -
RF LDMOS/EDMOS: Embedded Devices for Highly Integrated Solutions
RF LDMOS/EDMOS: embedded devices for highly integrated solutions T. Letavic, C. Li, M. Zierak, N. Feilchenfeld, M. Li, S. Zhang, P. Shyam, V. Purakh Outline • PowerSoc systems and product drivers – Systems that benefit from embedded power supplies also require .. • Ubiquitous wireless connectivity – RF integration (802.11.54, BTLE, BT, WPAN, …) • MCU + memory – code, actuation, network configuration – IoT network edge node = miniaturized embedded power supply and RF link • PowerSoC and RF device integration strategies – 180nm bulk-Si mobile power management process – LDMOS – 55nm bulk-Si silicon IoT platform – EDMOS – DC and RF benchmark to 5V CMOS • Power and RF application characterization – ISM bands, WiFi, performance against cellular industry standards – Embedded power and RF with the same device unit cell • Summary – PowerSoc and RF use the same device unit cell 2 Embedded power and RF: Envelope Tracking https://www.nujira.com Motorola eg. US 6,407,634 B1, US 6,617,920 B2 • RF supply modulation to reduce power dissipation (WiFi, 4G LTE) – Linear amplifier: 5Vpk-pk 80 MHz BW, >16QAM -> fT > 20 Ghz – SMPS: > 10-20 MHz fsw, 5-7 V FSOA, ultra-low Rsp*Qgg FOM • Optimal solution fT/fmax of cSiGe/GaN/GaAs with Si BCD voltage handling – RF LDMOS and RF EDMOS are challenging the incumbents …. 3 Embedded Power and RF: IoT Edge Node Semtech integrated RF transceiver SX123SX • Wireless IEEE 802.15.4, IEEE 802.11.ah, 2G/3G/4G LTE MTC, …. – 50 B connected endpoints 2020 (Cisco Mobility Report Dec 2016) – Integrated low power RF modem + PA, SMPS, -
Gan Or Gaas, TWT Or Klystron - Testing High Power Amplifiers for RADAR Signals Using Peak Power Meters
Application Note GaN or GaAs, TWT or Klystron - Testing High Power Amplifiers for RADAR Signals using Peak Power Meters Vitali Penso Applications Engineer, Boonton Electronics Abstract Measuring and characterizing pulsed RF signals used in radar applications present unique challenges. Unlike communication signals, pulsed radar signals are “on” for a short time followed by a long “off” period, during “on” time the system transmits anywhere from kilowatts to megawatts of power. The high power pulsing can stress the power amplifier (PA) in a number of ways both during the on/off transitions and during prolonged “on” periods. As new PA device technologies are introduced, latest one being GaN, the behavior of the amplifier needs to be thoroughly tested and evaluated. Given the time domain nature of the pulsed RF signal, the best way to observe the performance of the amplifier is through time domain signal analysis. This article explains why the peak power meter is a must have test instrument for characterizing the behavior of pulsed RF power amplifiers (PA) used in radar systems. Radar Power Amplifier Technology Overview Peak Power Meter for Pulsed RADAR Measurements Before we look at the peak power meter and its capabilities, let’s The most critical analysis of the pulsed RF signal takes place in the look at different technologies used in high power amplifiers (HPA) time domain. Since peak power meters measure, analyze and dis- for RADAR systems, particularly GaN on SiC, and why it has grabbed play the power envelope of a RF signal in the time domain, they the attention over the past decade. -
Quiescent Current Control for the RF Integrated Circuit Device Family
Freescale Semiconductor AN1977 Application Note Rev. 0, 10/2003 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family by: Pascal Gola, Antoine Rabany, Samay Kapoor and David Maurin Design Engineering INTRODUCTION LDMOS THERMAL BEHAVIOR During a power amplifier design phase, an important item Figure 1 presents the quiescent current thermal behavior of for a designer to consider is the management of performance a 30 Watt LDMOS device. over temperature. One of the main parameters that affects The drain-source current is strongly impacted by performance is the quiescent current. The challenge for a temperature. In Class AB and for a given VGS, the IDQ rises designer is to maintain constant quiescent current over a large with temperature. Consequently, the shapes of the AM/AM temperature range. The problem becomes more challenging response as well as linearity are affected by temperature. in a multistage IC (integrated circuit). To overcome this Figure 2 presents the third order IMD for a 2-tone CW difficulty, Freescale has embedded a quiescent current excitation for two different quiescent currents. As expected, thermal tracking circuit in its recently introduced family of RF the IDQ variation has a strong effect on the third order IMD power integrated circuits. behavior. This application note reviews the tracking circuit implemented in the RF power integrated circuit family, its static CIRCUIT IMPLEMENTATION characterization and its impact on linearity. The thermal tracking device is a very small integrated This information is applicable to the MW4IC2020, LDMOS FET transistor that is located next to the active MW4IC2230, MWIC930, MW4IC915, MHVIC2115 and LDMOS die area on the die. -
The Husir W-Band Transmitter
THE HUSIR W-BAND TRANSMITTER The HUSIR W-Band Transmitter Michael E. MacDonald, James P. Anderson, Roy K. Lee, David A. Gordon, and G. Neal McGrew The HUSIR transmitter leverages technologies The Haystack Ultrawideband Satellite » Imaging Radar (HUSIR) operates at a developed for diverse applications, such as frequency three times higher than and plasma fusion, space instrumentation, and at a bandwidth twice as wide as those of materials science, and combines them to create any other radar contributing to the U.S. Space Surveil- what is, to our knowledge, the most advanced lance Network. Novel transmitter techniques employed to achieve HUSIR’s 92–100 GHz bandwidth include a millimeter-wave radar transmitter in the world. gallium arsenide amplifier, a first-of-its-kind gyrotron Overall, the design goals of the HUSIR transmitter traveling-wave tube (gyro-TWT), the high-power com- were met in terms of power and bandwidth, and bination of gyro-TWT/klystron hybrids, and overmoded waveguide transmission lines in a multiplexed deep- the images collected by HUSIR have validated space test bed. the performance of the transmitter system regarding phase characteristics. At the time of Transmitter Technology this publication, the transmitter has logged more A radar transmitter is simply a high-power microwave amplifier. Nevertheless, as part of a radar system, it is than 4500 hours of trouble-free operation, second only to the antenna in terms of its cost and com- demonstrating the robustness of its design. plexity [1]. The HUSIR transmitter was developed on two complementary paths. The first, funded by the U.S. Air Force, involved the development of a novel vacuum elec- tron device (VED) or “tube”; the second, funded by the Defense Advanced Research Projects Agency (DARPA), leveraged an existing VED design to implement a novel multiplexed transmitter architecture. -
Arecibo 430 Mhz Radar System
file: 430txman 12-98 draft Aug. 31, 2005 Arecibo 430 MHz Radar System Operation and Maintenance Manual Written by Jon Hagen April 2001, 2nd ed. May 2005 1 NOTE With its high-voltage and high-power, and high places, this transmitter is potentially lethal. Proper precautions must be taken to avoid electrical shock, RF exposure, and X-ray exposure. (See Section 22). Emergency Procedure: ELECTRIC SHOCK Neutralize power 1. De-energize the circuit by means of switch or circuit breaker or cut the line by an insulated cutter. 2. Safely remove the victim from contact with the energy source by using dry wood stick, plastic rope, leather belt, blanket or any other non-conductive materials. Call for help 1. Others can help you administer first aid 2. Others can call professional medical help and/or arrange transfer facilities Cardio Pulmonary Resuscitation (CPR) 1. Check victim's ABC A - airway: Clear and open airway by head tilt - chin lift maneuver B - breathing: Check and restore breathing by rescue breathing C- circulation: Check and restore circulation by external chest compression 2. If pulse is present, but not breathing, maintain one rescue breathing (mouth to mouth resuscitation) as long as necessary. 3. If pulse and breathing are absent, give external chest compressions (CPR). 4. If pulse and breathing are present, stop CPR, stabilize the victim. 5. Caution: Only properly trained personnel should administer CPR to avoid further harm to 2 the victim. Administer first aid for shock 1. Keep the victim lying down, warm and comfortable to maintain body heat until medical assistance arrive. -
Small-Signal Amplifier Based on Single-Layer Mos2 Branimir Radisavljevic, Michael B
Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kis Citation: Appl. Phys. Lett. 101, 043103 (2012); doi: 10.1063/1.4738986 View online: http://dx.doi.org/10.1063/1.4738986 View Table of Contents: http://apl.aip.org/resource/1/APPLAB/v101/i4 Published by the American Institute of Physics. Related Articles Possible origins of a time-resolved frequency shift in Raman plasma amplifiers Phys. Plasmas 19, 073103 (2012) Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors Rev. Sci. Instrum. 83, 066107 (2012) Mesoscopic resistor as a self-calibrating quantum noise source Appl. Phys. Lett. 100, 203507 (2012) High-power, stable Ka/V dual-band gyrotron traveling-wave tube amplifier Appl. Phys. Lett. 100, 203502 (2012) Microstrip direct current superconducting quantum interference device radio frequency amplifier: Noise data Appl. Phys. Lett. 100, 152601 (2012) Additional information on Appl. Phys. Lett. Journal Homepage: http://apl.aip.org/ Journal Information: http://apl.aip.org/about/about_the_journal Top downloads: http://apl.aip.org/features/most_downloaded Information for Authors: http://apl.aip.org/authors Downloaded 24 Jul 2012 to 128.178.195.24. Redistribution subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions APPLIED PHYSICS LETTERS 101, 043103 (2012) Small-signal amplifier based on single-layer MoS2 Branimir Radisavljevic, Michael B. Whitwick, and Andras Kisa) Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland (Received 16 April 2012; accepted 6 July 2012; published online 23 July 2012) In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. -
Development of 50-Kv 100-Kw Three-Phase Resonant Converter for 95-Ghz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo
6674 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 63, NO. 11, NOVEMBER 2016 Development of 50-kV 100-kW Three-Phase Resonant Converter for 95-GHz Gyrotron Sung-Roc Jang, Jung-Ho Seo, and Hong-Je Ryoo Abstract—This paper describes the development of a and high power density, the operation of high-power vacuum 50-kV 100-kW cathode power supply (CPS) for the operation devices requires low output voltage ripple with low arc energy. of a 30-kW 95-GHz gyrotron. For stable operation of the gy- This is because the output voltage ripple and the arc energy rotron, the requirements of CPS include low output voltage ripple and low arc energy less than 1% and 10 J, respec- are closely related to the stability of the output power of the tively. Depending on required specifications, a three-phase electron beam and the safety of the device, respectively. It is series-parallel resonant converter (SPRC) is proposed for clear that a higher value of the output filter capacitor allows designing CPS. In addition to high-efficiency performance a lower value of the output voltage ripple. On the other hand, of SPRC, three-phase operation provides the reduction of the energy stored in the power supply output, which may in- the output voltage ripple through a minimized output filter component that is closely related to the arc energy. For al- stantaneously be discharged to vacuum devices because of the lowing symmetrical resonant current from three-phase res- arc, is proportional to the value of the output filter capacitor. In onant inverter, the high-voltage transformers are configured order to achieve low output voltage ripple with low arc energy, as star connection with floated neutral node.