Gan Or Gaas, TWT Or Klystron - Testing High Power Amplifiers for RADAR Signals Using Peak Power Meters
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Review of Power Sources
RF Power Generation With Klystrons amongst other things Dr. C Lingwood Includes slides by Professor R.G. Carter and A Dexter Engineering Department, Lancaster University, U.K. and The Cockcroft Institute of Accelerator Science and Technology • Basic Klystron Principals • Existing technology • Underrating • Modulation anodes • Other options – IOTS – Magnetrons June 2011 ESS Workshop June 2 IOT June 2011 ESS Workshop June 3 IOT Output gap June 2011 ESS Workshop June 4 Velocity modulation • An un-modulated electron beam passes through a cavity resonator with RF input • Electrons accelerated or retarded according to the phase of the gap voltage: Beam is velocity modulated: • As the beam drifts downstream bunches of electrons are formed as shown in the Applegate diagram • An output cavity placed downstream extracts RF power just as in an IOT • This is a simple 2-cavity klystron • Conduction angle = 180° (Class B) June 2010 CAS RF for Accelerators, Ebeltoft 5 Multi-cavity klystron • Additional cavities are used to increase gain, efficiency and bandwith • Bunches are formed by the first (N-1) cavities • Power is extracted by the Nth cavity • Electron gun is a space- charge limited diode with perveance given by I0 K 3 2 V0 • K × 106 is typically 0.5 - 2.0 • Beam is confined by an axial magnetic field Photo courtesy of Thales Electron Devices June 2010 CAS RF for Accelerators, Ebeltoft 6 Efficiency and Perveance • Second harmonic cavity used to increase bunching • Maximum possible efficiency with second harmonic cavity is approximately 6 e 0.85 -
MW6IC2420NBR1 2450 Mhz, 20 W, 28 V CW RF LDMOS Integrated
Freescale Semiconductor Document Number: MW6IC2420N Technical Data Rev. 3, 12/2010 RF LDMOS Integrated Power Amplifier MW6IC2420NBR1 The MW6IC2420NB integrated circuit is designed with on--chip matching that makes it usable at 2450 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. 2450 MHz, 20 W, 28 V Driver Applications CW • Typical CW Performance at 2450 MHz: VDD =28Volts,IDQ1 = 210 mA, RF LDMOS INTEGRATED POWER I = 370 mA, P = 20 Watts DQ2 out AMPLIFIER Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts CW Pout. Features Y • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection CASE 1329--09 • 225°C Capable Plastic Package TO--272 WB--16 • RoHS Compliant PLASTIC • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel GND 1 16 GND VDS1 2 NC 3 15 NC NC 4 LIFETIME BU VDS1 NC 5 RF / RFin 6 14 out RFin RFout/VDS2 VDS2 NC 7 VGS1 8 VGS2 9 VGS1 Quiescent Current VDS1 10 13 NC (1) VGS2 Temperature Compensation GND 11 12 GND VDS1 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. -
Comparative Overview of Inductive Output Tubes
! ESS AD Technical Note ! ESS/AD/0033 ! ! ! ! ! ! !!!!!!!!!! ! !!!Accelerator Division ! ! ! ! ! ! ! ! ! ! Comparative Overview of Inductive Output Tubes Rihua Zeng, Anders J. Johansson, Karin Rathsman and Stephen Molloy Influence of the Droop and Ripple of Modulator onRebecca Klystron SeviourOutput June 2011 23 February 2012 I. Introduction An IOT is a beam driven vacuum electronic RF amplifier. This document represents a comparative overview of the Inductive Output Tube (IOT). Starting with an overview of the IOT, we progress to a comparative discussion of the IOT relative to other RF amplifiers, discussing the advantages and limitations within the frame work of the RF amplifier requirements for the ESS. A discussion on the current state of the art in IOTs is presented along with the status of research programmes to develop 352MHz and 704MHz IOT’s. II. Background The Inductive Output Tube (IOT) RF amplifier was first proposed by Haeff in 1938, but not really developed into a working technology until the 1980s. Although primarily developed for the television transmitters, IOTs have been, and currently are, used on a number of international high- powered particle accelerators, such as; Diamond, LANSCE, and CERN. This has created a precedence and expertise in their use for accelerator applications. IOTs are a modified form of conventional coaxial gridded tubes, similar to the tetrode, although modified towards a linear beam structure device, similar to a Klystron. This hybrid construct is sometimes described as a cross between a klystron and a triode, hence Eimacs trade name for IOTs, the Klystrode. A schematic of an IOT, taken from [1], is shown in Figure 1. -
Solid State Modulators – Efficiency Considerations Focussing on Sic Devices –
Eidgenössische Technische Hochschule Zürich Laboratory for High Swiss Federal Institute of Technology Zurich Power Electronic Systems Solid State Modulators – Efficiency Considerations focussing on SiC Devices – J. Biela, S. Stathis, M. Jaritz, and S. Blume www.hpe.ee.ethz.ch / [email protected] Typical Topology of Solid State Pulse Modulator Systems AC/DC rectifier unit DC/DC converter for charging C-bank / voltage adaption Pulse generation unit Load e.g. klystron Constant Power Pulsed Power AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage ⎧⎪⎪⎪⎨⎪⎪⎪⎩ Sometimes integrated V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 2 33 Electronic Systems Typical Topology of Solid State Pulse Modulator Systems Grounded klystron load I Isolation with 50Hz transformer or I Isolated DC-DC converter Typical Isolation AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 3 33 Electronic Systems 29 MW(35MW)/140 µs Modulator for CLIC – System Efficiency – High Power Electronic Systems CLIC System Specifications Output voltage 150:::180 kV Settling time <8 µs Output power (pulsed) 29 MW (- 35 MW) Repetition rate 50 Hz Flat-top length 140 µs Average output power 203 kW (- 245 kW) Flat-top stability (FTS) <0.85 % Pulse to pulse repeatab. <100 ppm Rise time <3 µs 819 klystrons 819 klystrons 15 MW, 142 µs circumferences 15 MW, 142 µs delay loop 73 m drive beam -
RF LDMOS/EDMOS: Embedded Devices for Highly Integrated Solutions
RF LDMOS/EDMOS: embedded devices for highly integrated solutions T. Letavic, C. Li, M. Zierak, N. Feilchenfeld, M. Li, S. Zhang, P. Shyam, V. Purakh Outline • PowerSoc systems and product drivers – Systems that benefit from embedded power supplies also require .. • Ubiquitous wireless connectivity – RF integration (802.11.54, BTLE, BT, WPAN, …) • MCU + memory – code, actuation, network configuration – IoT network edge node = miniaturized embedded power supply and RF link • PowerSoC and RF device integration strategies – 180nm bulk-Si mobile power management process – LDMOS – 55nm bulk-Si silicon IoT platform – EDMOS – DC and RF benchmark to 5V CMOS • Power and RF application characterization – ISM bands, WiFi, performance against cellular industry standards – Embedded power and RF with the same device unit cell • Summary – PowerSoc and RF use the same device unit cell 2 Embedded power and RF: Envelope Tracking https://www.nujira.com Motorola eg. US 6,407,634 B1, US 6,617,920 B2 • RF supply modulation to reduce power dissipation (WiFi, 4G LTE) – Linear amplifier: 5Vpk-pk 80 MHz BW, >16QAM -> fT > 20 Ghz – SMPS: > 10-20 MHz fsw, 5-7 V FSOA, ultra-low Rsp*Qgg FOM • Optimal solution fT/fmax of cSiGe/GaN/GaAs with Si BCD voltage handling – RF LDMOS and RF EDMOS are challenging the incumbents …. 3 Embedded Power and RF: IoT Edge Node Semtech integrated RF transceiver SX123SX • Wireless IEEE 802.15.4, IEEE 802.11.ah, 2G/3G/4G LTE MTC, …. – 50 B connected endpoints 2020 (Cisco Mobility Report Dec 2016) – Integrated low power RF modem + PA, SMPS, -
Quiescent Current Control for the RF Integrated Circuit Device Family
Freescale Semiconductor AN1977 Application Note Rev. 0, 10/2003 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family by: Pascal Gola, Antoine Rabany, Samay Kapoor and David Maurin Design Engineering INTRODUCTION LDMOS THERMAL BEHAVIOR During a power amplifier design phase, an important item Figure 1 presents the quiescent current thermal behavior of for a designer to consider is the management of performance a 30 Watt LDMOS device. over temperature. One of the main parameters that affects The drain-source current is strongly impacted by performance is the quiescent current. The challenge for a temperature. In Class AB and for a given VGS, the IDQ rises designer is to maintain constant quiescent current over a large with temperature. Consequently, the shapes of the AM/AM temperature range. The problem becomes more challenging response as well as linearity are affected by temperature. in a multistage IC (integrated circuit). To overcome this Figure 2 presents the third order IMD for a 2-tone CW difficulty, Freescale has embedded a quiescent current excitation for two different quiescent currents. As expected, thermal tracking circuit in its recently introduced family of RF the IDQ variation has a strong effect on the third order IMD power integrated circuits. behavior. This application note reviews the tracking circuit implemented in the RF power integrated circuit family, its static CIRCUIT IMPLEMENTATION characterization and its impact on linearity. The thermal tracking device is a very small integrated This information is applicable to the MW4IC2020, LDMOS FET transistor that is located next to the active MW4IC2230, MWIC930, MW4IC915, MHVIC2115 and LDMOS die area on the die. -
Arecibo 430 Mhz Radar System
file: 430txman 12-98 draft Aug. 31, 2005 Arecibo 430 MHz Radar System Operation and Maintenance Manual Written by Jon Hagen April 2001, 2nd ed. May 2005 1 NOTE With its high-voltage and high-power, and high places, this transmitter is potentially lethal. Proper precautions must be taken to avoid electrical shock, RF exposure, and X-ray exposure. (See Section 22). Emergency Procedure: ELECTRIC SHOCK Neutralize power 1. De-energize the circuit by means of switch or circuit breaker or cut the line by an insulated cutter. 2. Safely remove the victim from contact with the energy source by using dry wood stick, plastic rope, leather belt, blanket or any other non-conductive materials. Call for help 1. Others can help you administer first aid 2. Others can call professional medical help and/or arrange transfer facilities Cardio Pulmonary Resuscitation (CPR) 1. Check victim's ABC A - airway: Clear and open airway by head tilt - chin lift maneuver B - breathing: Check and restore breathing by rescue breathing C- circulation: Check and restore circulation by external chest compression 2. If pulse is present, but not breathing, maintain one rescue breathing (mouth to mouth resuscitation) as long as necessary. 3. If pulse and breathing are absent, give external chest compressions (CPR). 4. If pulse and breathing are present, stop CPR, stabilize the victim. 5. Caution: Only properly trained personnel should administer CPR to avoid further harm to 2 the victim. Administer first aid for shock 1. Keep the victim lying down, warm and comfortable to maintain body heat until medical assistance arrive. -
Ampleon Company Presentation
Microwave Journal Educational Webinar Ampleon Brings RF Power Innovations towards Industrial Heating Market Gerrit Huisman Robin Wesson Klaus Werner Nov, 17, 2016 Amplify the future | 1 Ampleon at a Glance Our Company Our Businesses • European Company / Headquarters in • Building transistors and other RF Power products Nijmegen/Netherlands for over 50 years • 1,250 employees globally in 18 sites • Industry Leader for 35 years, addressing • Worldwide Sales, Application and R&D – Mobile Broadband – Broadcast • Own manufacturing facility – Aerospace & Defense • Partnering with leading external manufacturers – ISM – RF Energy Technologies & Products Customers • Broad LDMOSTaco and GaN technology portfolio Reinier Zwemstra Beltman • Comprehensive package line-up • Chief Operations Head of Sales OutstandingOfficer product consistency Amplify the future | 2 Ampleon and RF Energy • Recognized as thought leader • Co-founder of RF Energy Alliance • Working with the leaders in new application domains Amplify the future | 3 RF Power Industrial market dominated by vacuum tubes • Current solutions mainly based on ‘old’ vacuum tube principles • Somewhat fragmented market with large and many small vendors – TWT (Traveling Wave Tubes) – Klystron – Magnetrons – CFA (Crossed Field Amplifiers) – Gyrotrons Amplify the future | 4 2020 TAM VED’s about ~$1B $1.2B in 2014 TAM VEDS Source ABI research TWT 63% Klystron 17% Gyrotron 3% magnetron Cross Field 15% 2% Not included: domestic magnetrons, Aerospace market Amplify the future | 5 Solid state penetrates the -
50V RF LDMOS an Ideal RF Power Technology for ISM, Broadcast and Commercial Aerospace Applications Freescale.Com/Rfpower I
White Paper 50V RF LDMOS An ideal RF power technology for ISM, broadcast and commercial aerospace applications freescale.com/RFpower I. INTRODUCTION RF laterally diffused MOS (LDMOS) is currently the dominant device technology used in high-power RF power amplifier (PA) applications for frequencies ranging from 1 MHz to greater than 3.5 GHz. Beginning in the early 1990s, LDMOS has gained wide acceptance for cellular infrastructure PA applications, and now is the dominant RF power device technology for cellular infrastructure. This device technology offered significant advantages over the previous incumbent device technology, the silicon bipolar transistor, providing superior linearity, efficiency, gain and lower cost packaging options. LDMOS technology has continued to evolve to meet the ever more demanding requirements of the cellular infrastructure market, achieving higher levels of efficiency, gain, power and operational frequency[1-8]. The LDMOS device structure is highly flexible. While the cellular infrastructure market has standardized on 28–32V operation, several years ago Freescale developed 50V processes for applications outside of cellular infrastructure. These 50V devices are targeted for use in a wide variety of applications where high power density is a key differentiator and include industrial, scientific, medical (ISM), broadcast and commercial aerospace applications. Many of the same attributes that led to the displacement of bipolar transistors from the cellular infrastructure market in the early 1990s are equally valued in the broad RF power market: high power, gain, efficiency and linearity, low cost and outstanding reliability. In addition, the RF power market demands the very high RF ruggedness that LDMOS can deliver. The enhanced ruggedness LDMOS devices available from Freescale can displace not only bipolar devices but VMOS and vacuum tube devices that are still used in some ISM, broadcast and commercial aerospace applications. -
Klystron Gun Arcing and Modulator Protection
SLAC-PUB-10435 KLYSTRON GUN ARCING AND MODULATOR PROTECTION S.L. Gold Stanford Linear Accelerator Center (SLAC), Menlo Park, CA USA Abstract The demand for 500 kV and 265 amperes peak to power an X-Band klystron brings up protection issues for klystron faults and the energy dumped into the arc from the modulator. This situation is made worse when more than one klystron will be driven from a single modulator, such as the existing schemes for running two and eight klystrons. High power pulsed klystrons have traditionally be powered by line type modulators which match the driving impedance with the load impedance and therefore current limit at twice the operating current. Multiple klystrons have the added problems of a lower modulator source impedance and added stray capacitance, which converts into appreciable energy at high voltages like 500kV. SLAC has measured the energy dumped into klystron arcs in a single and dual klystron configuration at the 400 to 450kV level and found interesting characteristics in the arc formation. The author will present measured data from klystron arcs powered from line-type modulators in several configurations. The questions arise as to how the newly designed solid-state modulators, running multiple tubes, will react to a klystron arc and how much energy will be dumped into the arc. 1. INTRODUCTION The amount of protection required for a gun arc or a defocused beam in a microwave tube is a continual source of controversy and debate. Historically, tube companies have set protection requirements by their own experience in test. Body current interception was thought to be limited to 10 joules maximum and shutdown within 10 microseconds. -
Biasing LDMOS FET Devices in RF Power Amplifiers
Biasing LDMOS FET devices in RF power amplifi ers by Terry Millward, Maxim Integrated Products, USA LDMOS technology for fi eld-effect transistors (FETs) has emerged as the leading technology for high-power RF applications, and especially for the power amplifi ers found in cellular-system base stations. Breakdown voltages of 65 V and higher Rds(on) goes down. These effects are usually New devices allow LDMOS FETs to retain ruggedness shown in the data sheet as a plot in which the A number of bias-control devices for LDMOS and reliability while operating with 28 V gate bias values are normalised to 1 V at 25°C, FETs in RF power amplifiers have been power supplies. This article outlines the and different curves show the bias change developed. They provide temperature characteristics of such FET devices, and needed to maintain given drain currents over describes various methods of biasing to obtain temperature (Fig. 3). LDMOS FETs have a compensation for class A and class AB best performance. positive coeffi cient at low drain currents, but at power-amplifier configurations, and also more useful operating currents the coeffi cient provide automatic power control, by setting LDMOS characteristics the V level to optimise the drain current vs. becomes negative, giving protection against gs The laterally diffused metal-oxide- thermal runaway. The FET’s performance in a variations in RF power and drain voltage. semiconductor (LDMOS) FET structure power amplifi er is a tradeoff between linearity, New devices that provide continuous control (Fig. 1) provides a 3-terminal device whose effi ciency, and gain, leading to an optimum include the following: n+ source and drain regions are formed in drain-current setting that must be maintained • High-side current-sense amplifier for a p-type semiconductor substrate. -
The Free Electron Laser Klystron Amplifier Concept
E.L. Saldin et al. / Proceedings of the 2004 FEL Conference, 143-146 143 THE FREE ELECTRON LASER KLYSTRON AMPLIFIER CONCEPT E.L. Saldin, E.A. Schneidmiller, and M.V. Yurkov Deutsches Elektronen-Synchrotron (DESY), Hamburg, Germany Abstract as short as 10-100 µm have never been measured and are challenging to predict. We consider optical klystron with a high gain per cas- The situation is quite different for klystron amplifier cade pass. In order to achieve high gain at short wave- scheme described in our paper. A distinguishing feature of lengths, conventional FEL amplifiers require electron beam the klystron amplifier is the absence of apparent limitations peak current of a few kA. This is achieved by applying which would prevent operation without bunch compression longitudinal compression using a magnetic chicane. In in the injector linac. As we will see, the gain per cas- the case of klystron things are quite different and gain of cade pass is proportional to the peak current and inversely klystron does not depend on the bunch compression in the proportional to the energy spread of the beam. Since the injector linac. A distinguishing feature of the klystron am- bunch length and energy spread are related to each other plifier is that maximum of gain per cascade pass at high through Liouville’s theorem, the peak current and energy beam peak current is the same as at low beam peak cur- spread cannot vary independently of each other in the injec- rent without compression. Second important feature of the tor linac. To extent that local energy spead is proportional klystron configuration is that there are no requirements on to the peak current, which is usually the case for bunch the alignment of the cascade undulators and dispersion sec- compression, the gain will be independent of the actual tions.