The Economic Impact of Moore's Law: Evidence from When It Faltered
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Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
SIMD Extensions
SIMD Extensions PDF generated using the open source mwlib toolkit. See http://code.pediapress.com/ for more information. PDF generated at: Sat, 12 May 2012 17:14:46 UTC Contents Articles SIMD 1 MMX (instruction set) 6 3DNow! 8 Streaming SIMD Extensions 12 SSE2 16 SSE3 18 SSSE3 20 SSE4 22 SSE5 26 Advanced Vector Extensions 28 CVT16 instruction set 31 XOP instruction set 31 References Article Sources and Contributors 33 Image Sources, Licenses and Contributors 34 Article Licenses License 35 SIMD 1 SIMD Single instruction Multiple instruction Single data SISD MISD Multiple data SIMD MIMD Single instruction, multiple data (SIMD), is a class of parallel computers in Flynn's taxonomy. It describes computers with multiple processing elements that perform the same operation on multiple data simultaneously. Thus, such machines exploit data level parallelism. History The first use of SIMD instructions was in vector supercomputers of the early 1970s such as the CDC Star-100 and the Texas Instruments ASC, which could operate on a vector of data with a single instruction. Vector processing was especially popularized by Cray in the 1970s and 1980s. Vector-processing architectures are now considered separate from SIMD machines, based on the fact that vector machines processed the vectors one word at a time through pipelined processors (though still based on a single instruction), whereas modern SIMD machines process all elements of the vector simultaneously.[1] The first era of modern SIMD machines was characterized by massively parallel processing-style supercomputers such as the Thinking Machines CM-1 and CM-2. These machines had many limited-functionality processors that would work in parallel. -
Liečba Firmy Krízovým Manažérom
SEPTEMBER- OKTÓBER 2016 Ročník VIII. Magazín o ekonomike, biznise a spoločnosti Cena: 2,20 € LIEČBA FIRMY KRÍZOVÝM MANAŽÉROM Neľahká cesta z červených do čiernych čísel Trendy a výzvy európskej logistiky Firemný blog: robte ho poriadne alebo vôbec Stalo sa, opravíte s naším poistením majetku. Poistenie majetku MÔJ DOMOV Postavte sa s odvahou všetkým nepred- vídaným situáciám, ktoré ohrozujú váš domov. Najoceňovanejšie poistenie majetku Môj domov ich za vás vyrieši rýchlo a fér. allianzsp.sk Infolinka 0800 122 222 VZDELÁVANIE Podchyťme všetky talenty, Magazín o ekonomike, biznise a spoločnosti lebo Európa ich potrebuje V deťoch sa ukrýva veľký potenciál, príliš často však zostáva nevyužitý. Registrované ako periodická tlač Ministerstvom kultúry Slovenskej To je niečo, čo si Európska únia jednoducho nemôže dovoliť: plytvanie republiky pod registračným číslom EV 3451/09, ISSN 1337-9798 ľudskými zdrojmi, ktoré robí ľudí nešťastnými a je takisto kolektívnym Vydanie september – október 2015 zlyhaním. Vydáva: Nemám pritom na mysli len nadanie na štúdium. Je načase uznať ši- Goodwill Publishing, s. r. o. rokú škálu talentu a zručností. Známe sú práce amerického výskumní- IČO: 44 635 770 LB)PXBSEB(BSEOFSB LUPSâJEFOUJmLPWBMWFĔBESVIPWJOUFMJHFODJFPE interpersonálnej po muzikálnu, od priestorovej po jazykovú, logickú Adresa redakcie: alebo intrapersonálnu. Azda všetci súhlasia s tým, že až príliš často sa GOODWILL, Nevädzová 5, 821 01 Bratislava talent hodnotí na základe pevných kritérií, ktoré neodrážajú jeho boha- UFMGBYtHPPEXJMM!HPPEXJMMFVTL tosť ani zložitosť. Musíme sa otvoriť koncepcii talentu a vidieť ďalej, za Ing. Juraj Filin študijné výsledky. Žiaľ, školy majú stále sklon sústrediť sa na úzku ideu šéfredaktor a konateľ spôsobilosti – na akademickú prácu. mMJO!HPPEXJMMFVTLtSFEBLDJB!HPPEXJMMFVTL Potrebujeme talenty pre vyššie vzdelávanie, ale aj pre oblasti odbor- tel.: 0907 78 91 64 ného vzdelávania a prípravy. -
Curtiss-Wright to Display Rugged COTS Modules and System Solutions at Intel Developer Forum 2016
NEWS RELEASE FOR IMMEDIATE RELEASE Contact: John Wranovics (925) 640-6402 Curtiss-Wright to Display Rugged COTS Modules and System Solutions at Intel Developer Forum 2016 INTEL DEVELOPER FORUM 2016 (IDF16) – SAN FRANCISCO, Calif. (Booth #329) – August 16-18, 2016 – Curtiss-Wright’s Defense Solutions division will highlight its industry-leading open architecture rugged commercial-off-the-shelf (COTS) processing modules and subsystems along with its OpenHPEC™ Accelerator Suite of High Performance Embedded Computing (HPEC) software development tools for the aerospace and defense market at Intel Developer Forum 2016 San Francisco (IDF16: Booth #329). Featured will be demonstrations of glass cockpit applications running on rugged Intel processing modules and the industry’s first VITA 48.8-compliant Air Flow Through (AFT) rugged OpenVPX™ chassis. Curtiss-Wright will also display its Intel® Xeon® processor D-based 3U VPX CHAMP-XD1 and 6U VPX CHAMP-XD2 Digital Signal Processor (DSP) modules, which bring supercomputing-class processing to very compute-intensive C4ISR aerospace and defense applications such as radar processing, Signal Intelligence (SIGINT), and Electronic Warfare (EW). The broad range of Intel-based rugged COTS solutions displayed will include: Rugged Single Board Computer and DSP Modules: 3U VPX and XMC Mobile Xeon processor E3 v5 Modules: At IDF16 Curtiss-Wright is introducing two new small form factor COTS Single Board Computers (SBCs) based on Intel’s latest generation Mobile Xeon processor E3 v5 (formerly known as “Skylake-H”). The new rugged modules, the 3U OpenVPX™ VPX3-1220 and XMC-121 XMC processor mezzanine card, feature a low-power version of the Xeon processor to provide high performance quad-core x86 processing with integrated graphics at typically 50% the power levels of previous solutions. -
Nanoelectronics
Highlights from the Nanoelectronics for 2020 and Beyond (Nanoelectronics) NSI April 2017 The semiconductor industry will continue to be a significant driver in the modern global economy as society becomes increasingly dependent on mobile devices, the Internet of Things (IoT) emerges, massive quantities of data generated need to be stored and analyzed, and high-performance computing develops to support vital national interests in science, medicine, engineering, technology, and industry. These applications will be enabled, in part, with ever-increasing miniaturization of semiconductor-based information processing and memory devices. Continuing to shrink device dimensions is important in order to further improve chip and system performance and reduce manufacturing cost per bit. As the physical length scales of devices approach atomic dimensions, continued miniaturization is limited by the fundamental physics of current approaches. Innovation in nanoelectronics will carry complementary metal-oxide semiconductor (CMOS) technology to its physical limits and provide new methods and architectures to store and manipulate information into the future. The Nanoelectronics Nanotechnology Signature Initiative (NSI) was launched in July 2010 to accelerate the discovery and use of novel nanoscale fabrication processes and innovative concepts to produce revolutionary materials, devices, systems, and architectures to advance the field of nanoelectronics. The Nanoelectronics NSI white paper1 describes five thrust areas that focus the efforts of the six participating agencies2 on cooperative, interdependent R&D: 1. Exploring new or alternative state variables for computing. 2. Merging nanophotonics with nanoelectronics. 3. Exploring carbon-based nanoelectronics. 4. Exploiting nanoscale processes and phenomena for quantum information science. 5. Expanding the national nanoelectronics research and manufacturing infrastructure network. -
FAQ: Sic MOSFET Application Notes
FAQ SiC MOSFET Description This document introduces the Frequently Asked Questions and answers of SiC MOSFET. © 20 21 2021-3-22 Toshiba Electronic Devices & Storage Corporation 1 Table of Contents Description .............................................................................................................................................................. 1 Table of Contents .................................................................................................................................................... 2 List of Figures / List of Tables ................................................................................................................................ 3 1. What is SiC ? ...................................................................................................................................................... 4 2. Is it possible to connect multiple SiC MOSFETs in parallel ? ........................................................................... 5 ............................................................................... 6 .................................................................................... 7 5. If Si IGBT replaced with SiC MOSFET, what will change ? ............................................................................. 8 6. Is there anything to note about the Gate drive voltage ? ..................................................................................... 9 RESTRICTIONS ON PRODUCT USE .............................................................................................................. -
Upgrading and Repairing Pcs, 21St Edition Editor-In-Chief Greg Wiegand Copyright © 2013 by Pearson Education, Inc
Contents at a Glance Introduction 1 1 Development of the PC 5 2 PC Components, Features, and System Design 19 3 Processor Types and Specifications 29 4 Motherboards and Buses 155 5 BIOS 263 UPGRADING 6 Memory 325 7 The ATA/IDE Interface 377 AND 8 Magnetic Storage Principles 439 9 Hard Disk Storage 461 REPAIRING PCs 10 Flash and Removable Storage 507 21st Edition 11 Optical Storage 525 12 Video Hardware 609 13 Audio Hardware 679 14 External I/O Interfaces 703 15 Input Devices 739 16 Internet Connectivity 775 17 Local Area Networking 799 18 Power Supplies 845 19 Building or Upgrading Systems 929 20 PC Diagnostics, Testing, and Maintenance 975 Index 1035 Scott Mueller 800 East 96th Street, Indianapolis, Indiana 46240 Upgrading.indb i 2/15/13 10:33 AM Upgrading and Repairing PCs, 21st Edition Editor-in-Chief Greg Wiegand Copyright © 2013 by Pearson Education, Inc. Acquisitions Editor All rights reserved. No part of this book shall be reproduced, stored in a retrieval Rick Kughen system, or transmitted by any means, electronic, mechanical, photocopying, Development Editor recording, or otherwise, without written permission from the publisher. No patent Todd Brakke liability is assumed with respect to the use of the information contained herein. Managing Editor Although every precaution has been taken in the preparation of this book, the Sandra Schroeder publisher and author assume no responsibility for errors or omissions. Nor is any Project Editor liability assumed for damages resulting from the use of the information contained Mandie Frank herein. Copy Editor ISBN-13: 978-0-7897-5000-6 Sheri Cain ISBN-10: 0-7897-5000-7 Indexer Library of Congress Cataloging-in-Publication Data in on file. -
The Bottom-Up Construction of Molecular Devices and Machines*
Pure Appl. Chem., Vol. 80, No. 8, pp. 1631–1650, 2008. doi:10.1351/pac200880081631 © 2008 IUPAC Nanoscience and nanotechnology: The bottom-up construction of molecular devices and machines* Vincenzo Balzani‡ Department of Chemistry “G. Ciamician”, University of Bologna, 40126 Bologna, Italy Abstract: The bottom-up approach to miniaturization, which starts from molecules to build up nanostructures, enables the extension of the macroscopic concepts of a device and a ma- chine to molecular level. Molecular-level devices and machines operate via electronic and/or nuclear rearrangements and, like macroscopic devices and machines, need energy to operate and signals to communicate with the operator. Examples of molecular-level photonic wires, plug/socket systems, light-harvesting antennas, artificial muscles, molecular lifts, and light- powered linear and rotary motors are illustrated. The extension of the concepts of a device and a machine to the molecular level is of interest not only for basic research, but also for the growth of nanoscience and the development of nanotechnology. Keywords: molecular devices; molecular machines; information processing; photophysics; miniaturization. INTRODUCTION Nanotechnology [1–8] is a frequently used word both in the scientific literature and in the common lan- guage. It has become a favorite, and successful, term among America’s most fraudulent stock promot- ers [9] and, in the venture capital world of start-up companies, is perceived as “the design of very tiny platforms upon which to raise enormous amounts of money” [1]. Indeed, nanotechnology is a word that stirs up enthusiasm or fear since it is expected, for the good or for the bad, to have a strong influence on the future of mankind. -
Micromanufacturing and Fabrication of Microelectronic Devices
Micromanufacturing and Fabrication of Microelectronic PART Devices •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••V The importance of the topics covered in the following two chapters can best be appreciated by considering the manufacture of a simple metal spur gear. It is impor- tant to recall that some gears are designed to transmit power, such as those in gear boxes, yet others transmit motion, such as in rack and pinion mechanisms in auto- mobile steering systems. If the gear is, say, 100 mm (4 in.) in diameter, it can be produced by traditional methods, such as starting with a cast or forged blank, and machining and grinding it to its final shape and dimensions. A gear that is only 2 mm (0.080 in.) in diameter, on the other hand, can be difficult to produce by these meth- ods. If sufficiently thin, the gear could, for example, be made from sheet metal, by fine blanking, chemical etching, or electroforming. If the gear is only a few micrometers in size, it can be produced by such tech- niques as optical lithography, wet and dry chemical etching, and related processes. A gear that is only a nanometer in diameter would, however, be extremely difficult to produce; indeed, such a gear would have only a few tens of atoms across its surface. The challenges faced in producing gears of increasingly smaller sizes is highly informative, and can be put into proper perspective by referring to the illustration of length scales shown in Fig. V.1. Conventional manufacturing processes, described in Chapters 11 through 27, typically produce parts that are larger than a millimeter or so, and can be described as visible to the naked eye. -
Noise and Interference Management in 3-D Integrated Wireless Systems
Noise and Interference Management in 3-D Integrated Wireless Systems Emre Salman, Alex Doboli, and Milutin Stanacevic Department of Electrical and Computer Engineering Stony Brook University Stony Brook, New York 11794 [emre, adoboli, milutin]@ece.sunysb.edu Abstract—Three-dimensional (3-D) integration technology is an emerging candidate to alleviate the interconnect bottleneck by utilizing the third dimension. One of the important advantages of the 3-D technology is the capability to stack memory on top of the processor cores, significantly increasing the memory bandwidth. The application of 3-D integration to high perfor- mance processors, however, is limited by the thermal constraints since transferring the heat within a monolithic 3-D system is a challenging task. Alternatively, the application of 3-D integration to life sciences has not yet received much attention. Since typical applications in life sciences consume significantly less energy, the thermal constraints are relatively alleviated. Alternatively, interplane noise coupling emerges as a fundamental limitation in these highly heterogeneous 3-D systems. Various noise coupling paths in a heterogeneous 3-D system are investigated in this paper. Fig. 1. Monolithic 3-D integration technology where through silicon vias Contrary to the general assumption, 3-D systems are shown to (TSVs) are utilized to achieve communication among the planes [2]. be highly susceptible to substrate noise coupling. The effects of through silicon vias (TSVs) on noise propagation are also discussed. Furthermore, design methodologies are proposed to efficiently analyze and reduce noise coupling in 3-D systems. One of the primary limitations of these multi-core proces- sors utilizing 3-D integration technology is the temperature I. -
New Intel-Powered Classmate Pc Design
Intel Corporation 2200 Mission College Blvd. P.O. Box 58119 Santa Clara, CA 95052-8119 News Fact Sheet CONTACTS: Agnes Kwan Nor Badron 408-398-2573 +86 21 5460-4510 ext 2228 [email protected] [email protected] INTEL PROVIDES SNEAK PEEK OF NEW INTEL-POWERED CLASSMATE PC DESIGN INTEL DEVELOPER FORUM, San Francisco, Aug. 20, 2008 – Intel is expanding its offerings for the Intel-powered classmate PC category by introducing a design that has tablet, touch screen and motion-sensing interaction features. There are a vast number of different education needs among the 1.3 billion students in the world; the new classmate PC design aims to create more choices to meet these varying learning needs. “Understanding that there is no one-size-fits-all when it comes to education, we are passionate about transforming the way students learn,” said Lila Ibrahim, general manager of Intel’s Emerging Markets Platform Group. “We want to offer more choices to meet the diversity of student learning needs across the world. “Our ethnographic research has shown us that students responded well to tablet and touch screen technology,” Ibrahim added. “The creativity, interactivity and user-friendliness of the new design will enhance the learning experiences for these children. This is important for both emerging and mature markets where technology is increasing being seen as a key tool in encouraging learning and facilitating teaching.” New Design, Same Philosophy The new design is based on findings from ethnographic research and pilots from the past two years. The research pointed out that students naturally collaborate to learn in groups, and – more – Intel/Page 2 they will benefit from the mobility and flexibility of notebooks versus being tethered to their desks. -
AI Chips: What They Are and Why They Matter
APRIL 2020 AI Chips: What They Are and Why They Matter An AI Chips Reference AUTHORS Saif M. Khan Alexander Mann Table of Contents Introduction and Summary 3 The Laws of Chip Innovation 7 Transistor Shrinkage: Moore’s Law 7 Efficiency and Speed Improvements 8 Increasing Transistor Density Unlocks Improved Designs for Efficiency and Speed 9 Transistor Design is Reaching Fundamental Size Limits 10 The Slowing of Moore’s Law and the Decline of General-Purpose Chips 10 The Economies of Scale of General-Purpose Chips 10 Costs are Increasing Faster than the Semiconductor Market 11 The Semiconductor Industry’s Growth Rate is Unlikely to Increase 14 Chip Improvements as Moore’s Law Slows 15 Transistor Improvements Continue, but are Slowing 16 Improved Transistor Density Enables Specialization 18 The AI Chip Zoo 19 AI Chip Types 20 AI Chip Benchmarks 22 The Value of State-of-the-Art AI Chips 23 The Efficiency of State-of-the-Art AI Chips Translates into Cost-Effectiveness 23 Compute-Intensive AI Algorithms are Bottlenecked by Chip Costs and Speed 26 U.S. and Chinese AI Chips and Implications for National Competitiveness 27 Appendix A: Basics of Semiconductors and Chips 31 Appendix B: How AI Chips Work 33 Parallel Computing 33 Low-Precision Computing 34 Memory Optimization 35 Domain-Specific Languages 36 Appendix C: AI Chip Benchmarking Studies 37 Appendix D: Chip Economics Model 39 Chip Transistor Density, Design Costs, and Energy Costs 40 Foundry, Assembly, Test and Packaging Costs 41 Acknowledgments 44 Center for Security and Emerging Technology | 2 Introduction and Summary Artificial intelligence will play an important role in national and international security in the years to come.