Molecular Nanoelectronics
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Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
Fundamentals of Nanoelectronics (Fone)
ESF EUROCORES Programme Fundamentals of NanoElectronics (FoNE) Highlights European Science Foundation (ESF) Physical and Engineering Sciences (PESC) The European Science Foundation (ESF) is an The Physical and Engineering Sciences are key drivers independent, non-governmental organisation, the for research and innovation, providing fundamental members of which are 78 national funding agencies, insights and creating new applications for mankind. research performing agencies, academies and learned The goal of the ESF Standing Committee for Physical societies from 30 countries. and Engineering Sciences (PESC) is to become the The strength of ESF lies in its influential membership pan-European platform for innovative research and and in its ability to bring together the different domains competitive new ideas while addressing societal of European science in order to meet the challenges of issues in a more effective and sustainable manner. the future. The Committee is a unique cross-disciplinary Since its establishment in 1974, ESF, which has its group, with networking activities comprising a good headquarters in Strasbourg with offices in Brussels mix of experimental and theoretical approaches. and Ostend, has assembled a host of organisations It distinguishes itself by focusing on fundamental that span all disciplines of science, to create a research and engineering. PESC covers the following common platform for cross-border cooperation in broad spectrum of fields: chemistry, mathematics, Europe. informatics and the computer sciences, physics, ESF is dedicated to promoting collaboration in fundamental engineering sciences and materials scientific research, funding of research and science sciences. policy across Europe. Through its activities and instruments ESF has made major contributions to science in a global context. -
Rise of the Molecular Machines Euan R
Angewandte. Essays International Edition: DOI: 10.1002/anie.201503375 Supramolecular Systems German Edition: DOI: 10.1002/ange.201503375 Rise of the Molecular Machines Euan R. Kay* and David A. Leigh* molecular devices · molecular machines · molecular motors · molecular nanotechnology Introduction inspirational in general terms, it is doubtful whether either of these manifestos had much practical influence on the devel- “When we get to the very, very small world … we have a lot of opment of artificial molecular machines.[5] Feynmans talk new things that would happen that represent completely new came at a time before chemists had the synthetic methods and opportunities for design … At the atomic level we have new kinds analytical tools available to be able to consider how to make of forces and new kinds of possibilities, new kinds of effects. The molecular machines; Drexlers somewhat nonchemical view problem of manufacture and reproduction of materials will be of atomic construction is not shared by the majority of quite different … inspired by biological phenomena in which experimentalists working in this area. In fact, “mechanical” chemical forces are used in a repetitious fashion to produce all movement within molecules has been part of chemistry since kinds of weird effects (one of which is the author) …” conformational analysis became established in the 1950s.[6] As Richard P. Feynman (1959)[2] well as being central to advancing the structural analysis of complex molecules, this was instrumental in chemists begin- It has long been appreciated that molecular motors and ning to consider dynamics as an intrinsic aspect of molecular machines are central to almost every biological process. -
A Brief History of Molecular Electronics
COMMENTARY | FOCUS A brief history of molecular electronics Mark Ratner The field of molecular electronics has been around for more than 40 years, but only recently have some fundamental problems been overcome. It is now time for researchers to move beyond simple descriptions of charge transport and explore the numerous intrinsic features of molecules. he concept of electrons moving conductivity decreased exponentially with Conference by one of the inventors of through single molecules comes layer thickness, therefore revealing electron the STM how to account for the fact Tin two different guises. The first is tunnelling through the organic monolayer. that charge could actually move through electron transfer, which involves a charge In 1974, Arieh Aviram and I published fatty acids containing long, saturated moving from one end of the molecule to the first theoretical discussion of transport hydrocarbon chains. the other1. The second, which is closely through a single molecule8. On reflection The first significant work attempting related but quite distinct, is molecular now, there are some striking features about to measure single-molecule transport charge transport and involves current this work. First, we suggested a very ad came from Mark Reed’s group at Yale passing through a single molecule that is hoc scheme for the actual calculation. University, working in collaboration with strung between electrodes2,3. The two are (This was in fact the beginning of many James Tour’s group, then at the University related because they both attempt -
Engineered Carbon Nanotubes and Graphene for Nanoelectronics And
Engineered Carbon Nanotubes and Graphene for Nanoelectronics and Nanomechanics E. H. Yang Stevens Institute of Technology, Castle Point on Hudson, Hoboken, NJ, USA, 07030 ABSTRACT We are exploring nanoelectronic engineering areas based on low dimensional materials, including carbon nanotubes and graphene. Our primary research focus is investigating carbon nanotube and graphene architectures for field emission applications, energy harvesting and sensing. In a second effort, we are developing a high-throughput desktop nanolithography process. Lastly, we are studying nanomechanical actuators and associated nanoscale measurement techniques for re-configurable arrayed nanostructures with applications in antennas, remote detectors, and biomedical nanorobots. The devices we fabricate, assemble, manipulate, and characterize potentially have a wide range of applications including those that emerge as sensors, detectors, system-on-a-chip, system-in-a-package, programmable logic controls, energy storage systems, and all-electronic systems. INTRODUCTION A key attribute of modern warfare is the use of advanced electronics and information technologies. The ability to process, analyze, distribute and act upon information from sensors and other data at very high- speeds has given the US military unparalleled technological superiority and agility in the battlefield. While recent advances in materials and processing methods have led to the development of faster processors and high-speed devices, it is anticipated that future technological breakthroughs in these areas will increasingly be driven by advances in nanoelectronics. A vital enabler in generating significant improvements in nanoelectronics is graphene, a recently discovered nanoelectronic material. The outstanding electrical properties of both carbon nanotubes (CNTs) [1] and graphene [2] make them exceptional candidates for the development of novel electronic devices. -
Designing a Nanoelectronic Circuit to Control a Millimeter-Scale Walking Robot
Designing a Nanoelectronic Circuit to Control a Millimeter-scale Walking Robot Alexander J. Gates November 2004 MP 04W0000312 McLean, Virginia Designing a Nanoelectronic Circuit to Control a Millimeter-scale Walking Robot Alexander J. Gates November 2004 MP 04W0000312 MITRE Nanosystems Group e-mail: [email protected] WWW: http://www.mitre.org/tech/nanotech Sponsor MITRE MSR Program Project No. 51MSR89G Dept. W809 Approved for public release; distribution unlimited. Copyright © 2004 by The MITRE Corporation. All rights reserved. Gates, Alexander Abstract A novel nanoelectronic digital logic circuit was designed to control a millimeter-scale walking robot using a nanowire circuit architecture. This nanoelectronic circuit has a number of benefits, including extremely small size and relatively low power consumption. These make it ideal for controlling microelectromechnical systems (MEMS), such as a millirobot. Simulations were performed using a SPICE circuit simulator, and unique device models were constructed in this research to assess the function and integrity of the nanoelectronic circuit’s output. It was determined that the output signals predicted for the nanocircuit by these simulations meet the requirements of the design, although there was a minor signal stability issue. A proposal is made to ameliorate this potential problem. Based on this proposal and the results of the simulations, the nanoelectronic circuit designed in this research could be used to begin to address the broader issue of further miniaturizing circuit-micromachine systems. i Gates, Alexander I. Introduction The purpose of this paper is to describe the novel nanoelectronic digital logic circuit shown in Figure 1, which has been designed by this author to control a millimeter-scale walking robot. -
The Economic Impact of Moore's Law: Evidence from When It Faltered
The Economic Impact of Moore’s Law: Evidence from when it faltered Neil Thompson Sloan School of Management, MIT1 Abstract “Computing performance doubles every couple of years” is the popular re- phrasing of Moore’s Law, which describes the 500,000-fold increase in the number of transistors on modern computer chips. But what impact has this 50- year expansion of the technological frontier of computing had on the productivity of firms? This paper focuses on the surprise change in chip design in the mid-2000s, when Moore’s Law faltered. No longer could it provide ever-faster processors, but instead it provided multicore ones with stagnant speeds. Using the asymmetric impacts from the changeover to multicore, this paper shows that firms that were ill-suited to this change because of their software usage were much less advantaged by later improvements from Moore’s Law. Each standard deviation in this mismatch between firm software and multicore chips cost them 0.5-0.7pp in yearly total factor productivity growth. These losses are permanent, and without adaptation would reflect a lower long-term growth rate for these firms. These findings may help explain larger observed declines in the productivity growth of users of information technology. 1 I would like to thank my PhD advisors David Mowery, Lee Fleming, Brian Wright and Bronwyn Hall for excellent support and advice over the years. Thanks also to Philip Stark for his statistical guidance. This work would not have been possible without the help of computer scientists Horst Simon (Lawrence Berkeley National Lab) and Jim Demmel, Kurt Keutzer, and Dave Patterson in the Berkeley Parallel Computing Lab, I gratefully acknowledge their overall guidance, their help with the Berkeley Software Parallelism Survey and their hospitality in letting me be part of their lab. -
FLEXIBLE ELECTRONICS: MATERIALS and DEVICE FABRICATION
FLEXIBLE ELECTRONICS: MATERIALS and DEVICE FABRICATION by Nurdan Demirci Sankır Dissertation submitted to the Faculty of Virginia Polytechnic Institute and State University In partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Materials Science and Engineering APPROVED: Richard O. Claus, Chairman Sean Corcoran Guo-Quan Lu Daniel Stilwell Dwight Viehland December 7, 2005 Blacksburg, Virginia Keywords: flexible electronics, organic electronics, organic semiconductors, electrical conductivity, line patterning, inkjet printing, field effect transistor. Copyright 2005, Nurdan Demirci Sankır FLEXIBLE ELECTRONICS: MATERIALS and DEVICE FABRICATION by Nurdan Demirci Sankır ABSTRACT This dissertation will outline solution processable materials and fabrication techniques to manufacture flexible electronic devices from them. Conductive ink formulations and inkjet printing of gold and silver on plastic substrates were examined. Line patterning and mask printing methods were also investigated as a means of selective metal deposition on various flexible substrate materials. These solution-based manufacturing methods provided deposition of silver, gold and copper with a controlled spatial resolution and a very high electrical conductivity. All of these procedures not only reduce fabrication cost but also eliminate the time-consuming production steps to make basic electronic circuit components. Solution processable semiconductor materials and their composite films were also studied in this research. Electrically conductive, ductile, thermally and mechanically stable composite films of polyaniline and sulfonated poly (arylene ether sulfone) were introduced. A simple chemical route was followed to prepare composite films. The electrical conductivity of the films was controlled by changing the weight percent of conductive filler. Temperature dependent DC conductivity studies showed that the Mott three dimensional hopping mechanism can be used to explain the conduction mechanism in composite films. -
Molecular and Nano Electronics/Molecular Electronics
NANOSCIENCES AND NANOTECHNOLOGIES - Molecular And Nano-Electronics - Weiping Wu, Yunqi Liu, Daoben Zhu MOLECULAR AND NANO-ELECTRONICS Weiping Wu, Yunqi Liu, Daoben Zhu Institute of Chemistry, Chinese Academy of Sciences, China Keywords: nano-electronics, nanofabrication, molecular electronics, molecular conductive wires, molecular switches, molecular rectifier, molecular memories, molecular transistors and circuits, molecular logic and molecular computers, bioelectronics. Contents 1. Introduction 2. Molecular and nano-electronics in general 2.1. The Electrodes 2.2. The Molecules and Nano-Structures as Active Components 2.3. The Molecule–Electrode Interface 3. Approaches to nano-electronics 3.1. Nanofabrication 3.2. Nanomaterial Electronics 3.3. Molecular Electronics 4. Molecular and Nano-devices 4.1. Definition, Development and Challenge of Molecular Devices 4.2. Molecular Conductive Wires 4.3. Molecular Switches 4.4. Molecular Rectifiers 4.5. Molecular Memories 4.6. Molecular Transistors and Circuits 4.7. Molecular Logic and Molecular Computers 4.8. Nano-Structures in Nano-Electronics 4.9. Other Applications, Such as Energy Production and Medical Diagnostics 4.10. Molecularly-Resolved Bioelectronics 5. Summary and perspective Glossary BibliographyUNESCO – EOLSS Biographical Sketches Summary SAMPLE CHAPTERS Molecular and nano-electronics using single molecules or nano-structures as active components are promising technological concepts with fast growing interest. It is the science and technology related to the understanding, design, and -
Nanoelectronics
Highlights from the Nanoelectronics for 2020 and Beyond (Nanoelectronics) NSI April 2017 The semiconductor industry will continue to be a significant driver in the modern global economy as society becomes increasingly dependent on mobile devices, the Internet of Things (IoT) emerges, massive quantities of data generated need to be stored and analyzed, and high-performance computing develops to support vital national interests in science, medicine, engineering, technology, and industry. These applications will be enabled, in part, with ever-increasing miniaturization of semiconductor-based information processing and memory devices. Continuing to shrink device dimensions is important in order to further improve chip and system performance and reduce manufacturing cost per bit. As the physical length scales of devices approach atomic dimensions, continued miniaturization is limited by the fundamental physics of current approaches. Innovation in nanoelectronics will carry complementary metal-oxide semiconductor (CMOS) technology to its physical limits and provide new methods and architectures to store and manipulate information into the future. The Nanoelectronics Nanotechnology Signature Initiative (NSI) was launched in July 2010 to accelerate the discovery and use of novel nanoscale fabrication processes and innovative concepts to produce revolutionary materials, devices, systems, and architectures to advance the field of nanoelectronics. The Nanoelectronics NSI white paper1 describes five thrust areas that focus the efforts of the six participating agencies2 on cooperative, interdependent R&D: 1. Exploring new or alternative state variables for computing. 2. Merging nanophotonics with nanoelectronics. 3. Exploring carbon-based nanoelectronics. 4. Exploiting nanoscale processes and phenomena for quantum information science. 5. Expanding the national nanoelectronics research and manufacturing infrastructure network. -
Weak Functional Group Interactions Revealed Through Metal-Free Active Template Rotaxane Synthesis
ARTICLE https://doi.org/10.1038/s41467-020-14576-7 OPEN Weak functional group interactions revealed through metal-free active template rotaxane synthesis Chong Tian 1,2, Stephen D.P. Fielden 1,2, George F.S. Whitehead 1, Iñigo J. Vitorica-Yrezabal1 & David A. Leigh 1* 1234567890():,; Modest functional group interactions can play important roles in molecular recognition, catalysis and self-assembly. However, weakly associated binding motifs are often difficult to characterize. Here, we report on the metal-free active template synthesis of [2]rotaxanes in one step, up to 95% yield and >100:1 rotaxane:axle selectivity, from primary amines, crown ethers and a range of C=O, C=S, S(=O)2 and P=O electrophiles. In addition to being a simple and effective route to a broad range of rotaxanes, the strategy enables 1:1 interactions of crown ethers with various functional groups to be characterized in solution and the solid state, several of which are too weak — or are disfavored compared to other binding modes — to be observed in typical host–guest complexes. The approach may be broadly applicable to the kinetic stabilization and characterization of other weak functional group interactions. 1 Department of Chemistry, University of Manchester, Manchester M13 9PL, UK. 2These authors contributed equally: Chong Tian, Stephen D. P. Fielden. *email: [email protected] NATURE COMMUNICATIONS | (2020) 11:744 | https://doi.org/10.1038/s41467-020-14576-7 | www.nature.com/naturecommunications 1 ARTICLE NATURE COMMUNICATIONS | https://doi.org/10.1038/s41467-020-14576-7 he bulky axle end-groups of rotaxanes mechanically lock To explore the scope of this unexpected method of rotaxane Trings onto threads, preventing the dissociation of the synthesis, here we carry out a study of the reaction with a series of components even if the interactions between them are not related electrophiles. -
FAQ: Sic MOSFET Application Notes
FAQ SiC MOSFET Description This document introduces the Frequently Asked Questions and answers of SiC MOSFET. © 20 21 2021-3-22 Toshiba Electronic Devices & Storage Corporation 1 Table of Contents Description .............................................................................................................................................................. 1 Table of Contents .................................................................................................................................................... 2 List of Figures / List of Tables ................................................................................................................................ 3 1. What is SiC ? ...................................................................................................................................................... 4 2. Is it possible to connect multiple SiC MOSFETs in parallel ? ........................................................................... 5 ............................................................................... 6 .................................................................................... 7 5. If Si IGBT replaced with SiC MOSFET, what will change ? ............................................................................. 8 6. Is there anything to note about the Gate drive voltage ? ..................................................................................... 9 RESTRICTIONS ON PRODUCT USE ..............................................................................................................