Micromanufacturing and Fabrication of Microelectronic Devices
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Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
A Review Paper on Enhancement of Radio Frequency Microelectro Mechanical Systems
International Journal of Engineering Research & Technology (IJERT) ISSN: 2278-0181 Vol. 3 Issue 10, October- 2014 A Review Paper on Enhancement of Radio Frequency MicroElectro Mechanical Systems Shilpa G. Kulkarni Electronics And Telecommunication Engineering V.I.T.Wadala Mumbai - India Abstract—Radio Frequency Micro Electro Mechanical Systems (RF MEMS) refers to the design and fabrication of committed II. NEED FOR RF MEMS MEMS for RF circuits. RF MEMS is a multi-disciplinary area MEMS switches combine the advantageous properties of in which the components operate Micromechanical And / Or mechanical and semiconductor switches.RF MEMS have components are fabricated using micromachining and these advantages such as, Low insertion loss, High isolation, Lower components are used in RF systems. The regular microwave switches currently employed in the microwave industry are power consumption, Excellent signal linearity, Better mechanical switches and semiconductor switches. Mechanical impedance match, Less dispersion , Miniaturization, Simple coaxial and waveguide switches offer benefits such as, low control circuits, High volume production possible, Very large insertion loss, large off-state isolation and high power handling bandwidth , Resistant to external environment. Table Iand Fig capabilities. Yet, they are bulky, heavy and slow. Semiconductor 1provide a comparison of RF MEMS Switches with the switches provide switching at a much faster speed and are conventional switches. smaller in size and weight, but are inferior in insertion loss, DC power consumption, isolation and power handling capabilities TABLE I. COMPARISON OF VARIOUS PARAMETERS[2] than their mechanical counterparts. MEMS switches promise to RF combine the advantageous properties of mechanical and Parameter PIN FET semiconductor switches. There are nevertheless few issues in RF MEMS MEMS Switch like, Actuation Speed, Power handling capacity, Voltage(V) 20-80 ±3-5 3-5 Stiction and Actuation voltage etc. -
Three-Dimensional Integrated Circuit Design: EDA, Design And
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change. -
Design of a Microelectronic Manufacturing Laboratory
2006-1635: DESIGN OF A MICROELECTRONIC MANUFACTURING LABORATORY Stilson Applin, Montana State University Todd Kaiser, Montana State University Page 11.407.1 Page © American Society for Engineering Education, 2006 Design of a Microelectronic Manufacturing Laboratory Abstract The design of an undergraduate microelectronic manufacturing laboratory for teaching will be described in the following paper. This laboratory emphasizes learning the processes of semiconductor manufacturing and clean room protocol. The laboratory is housed in a 500 square foot, class 10,000 facility. In the laboratory the students, with a junior standing and a science based background, will use a pre-made six mask set to create P and N type transistors as well as inverters and diodes. The students will be conducting oxidization, RCA clean, photolithography, etching, diffusion, metallization and other processes. A brief description of these processes and the methods used to teach them will also be described. In addition to these processes students will also learn about clean room protocol, chemical safety, and testing devices. All of these skills will be marketable to future employers and graduate schools. These same skills and processes will be covered in a seminar course for educators, with the main purpose of inspiring the high school teachers to teach about semiconductor manufacturing. The cost effective design is what makes the laboratory unique. The expenditure control is important due to the size of the Electrical Engineering department. The department has only 250 undergraduates and 40 graduate students, thus internal funding is difficult to obtain. A user fee paid by the students will cover the funding. This fee will be small and manageable for any college student. -
The Economic Impact of Moore's Law: Evidence from When It Faltered
The Economic Impact of Moore’s Law: Evidence from when it faltered Neil Thompson Sloan School of Management, MIT1 Abstract “Computing performance doubles every couple of years” is the popular re- phrasing of Moore’s Law, which describes the 500,000-fold increase in the number of transistors on modern computer chips. But what impact has this 50- year expansion of the technological frontier of computing had on the productivity of firms? This paper focuses on the surprise change in chip design in the mid-2000s, when Moore’s Law faltered. No longer could it provide ever-faster processors, but instead it provided multicore ones with stagnant speeds. Using the asymmetric impacts from the changeover to multicore, this paper shows that firms that were ill-suited to this change because of their software usage were much less advantaged by later improvements from Moore’s Law. Each standard deviation in this mismatch between firm software and multicore chips cost them 0.5-0.7pp in yearly total factor productivity growth. These losses are permanent, and without adaptation would reflect a lower long-term growth rate for these firms. These findings may help explain larger observed declines in the productivity growth of users of information technology. 1 I would like to thank my PhD advisors David Mowery, Lee Fleming, Brian Wright and Bronwyn Hall for excellent support and advice over the years. Thanks also to Philip Stark for his statistical guidance. This work would not have been possible without the help of computer scientists Horst Simon (Lawrence Berkeley National Lab) and Jim Demmel, Kurt Keutzer, and Dave Patterson in the Berkeley Parallel Computing Lab, I gratefully acknowledge their overall guidance, their help with the Berkeley Software Parallelism Survey and their hospitality in letting me be part of their lab. -
Introduction to Micro Electromechanical Systems”, F
A not so short Introduction to Micro Electromechanical Systems Franck CHOLLET, Haobing LIU 1 Please note that this work is published under a : Attribution-NonCommercial 2.5 You are free: • to copy, distribute, display, and perform the work • to make derivative works Under the following conditions: Attribution. Please attribute this work using: “A not so short Introduction to Micro Electromechanical Systems”, F. Chollet, HB. Liu, Jan. 2006, Noncommercial. You may not use this work for commercial purposes. • For any reuse or distribution, you must make clear to others the license terms of this work. • Any of these conditions can be waived if you get permission from the copyright holder. Your fair use and other rights are in no way affected by the above. This is a human-readable summary of the Legal Code (http://creativecommons.org/licenses/by-nc/2.5/legalcode). Table of Content 1. Why MEMS?.................................................................................................................4 1.1. What is MEMS and comparison with microelectronics .....................................4 1.2. Why MEMS technology .....................................................................................4 1.2.1. Advantages offered...................................................................................4 1.2.2. Diverse products and markets ..................................................................5 1.2.3. Economy of MEMS manufacturing and applications ..............................6 1.3. Major drivers for MEMS technology..................................................................8 -
Microelectronics: Devices to Circuits
MICROELECTRONICS: DEVICES TO CIRCUITS PROF.SUDEB DASGUPTA TYPE OF COURSE : Rerun | Core_Elective | PG/UG Department of Electronics & Communication Engineering COURSE DURATION : 12 weeks (26 Jul'21 - 15 Oct'21) IIT Roorkee EXAM DATE : 24 Oct 2021 INTENDED AUDIENCE : Any Interested Learners PRE-REQUISITES : First course on linear circuit analysis, A basic course on Semiconductor Devices and Digital Electronics. A course on Computer Organization will be also helpful (though not strictly required). INDUSTRIES APPLICABLE TO : Cadence; Synopsys; ST Microelectronics; NXP Semiconductors;Semiconductor Complex Limited; Design House in general COURSE OUTLINE : This course aligns with the core courses in Electronics Circuits taught to undergraduates in Electrical and Computer Engineering. The objective of this course is to develop the ability to analyse and design electronic circuits both analog and digital, discrete and integrated.The course starts with the basics of the device most seldom encountered in mixed designs and then go on to do circuit analysis in the later parts. ABOUT INSTRUCTOR : Prof. S. Dasgupta is presently working as an Associate Professor, in Microelectronics and VLSI Group of the Department of Electronics and Communication Engineering at Indian Institute of Technology, Roorkee. He received his PhD degree in Electronics Engineering from Institute of Technology-Banaras Hindu University (currently IIT-BHU), Varanasi in 2000. COURSE PLAN : Week 1 : Bipolar Junction Transistor; Physical Structure and Modes of operation,Operation in Active Mode, circuit symbols and conventions, BJT as an Amplifier, small circuit model, BJT as a switch and Ebers Moll Model, Simple BJT inverter and Second Order Effects Week 2 : MOS Transistor Basic,MOS Parasitic & SPICE Model; CMOS Inverter Basics-I Week 3 : CMOS Inverter Basics(contd), Power Analysis, SPICE Simulation-I Week 4 : Biasing of MOS Amplifier and its behavior as an analog switch, CMOS CS/CG/SF Amplifier Configuration, Internal cap models and high frequency modelling, JFET, structure and operation. -
Nanoelectronics
Highlights from the Nanoelectronics for 2020 and Beyond (Nanoelectronics) NSI April 2017 The semiconductor industry will continue to be a significant driver in the modern global economy as society becomes increasingly dependent on mobile devices, the Internet of Things (IoT) emerges, massive quantities of data generated need to be stored and analyzed, and high-performance computing develops to support vital national interests in science, medicine, engineering, technology, and industry. These applications will be enabled, in part, with ever-increasing miniaturization of semiconductor-based information processing and memory devices. Continuing to shrink device dimensions is important in order to further improve chip and system performance and reduce manufacturing cost per bit. As the physical length scales of devices approach atomic dimensions, continued miniaturization is limited by the fundamental physics of current approaches. Innovation in nanoelectronics will carry complementary metal-oxide semiconductor (CMOS) technology to its physical limits and provide new methods and architectures to store and manipulate information into the future. The Nanoelectronics Nanotechnology Signature Initiative (NSI) was launched in July 2010 to accelerate the discovery and use of novel nanoscale fabrication processes and innovative concepts to produce revolutionary materials, devices, systems, and architectures to advance the field of nanoelectronics. The Nanoelectronics NSI white paper1 describes five thrust areas that focus the efforts of the six participating agencies2 on cooperative, interdependent R&D: 1. Exploring new or alternative state variables for computing. 2. Merging nanophotonics with nanoelectronics. 3. Exploring carbon-based nanoelectronics. 4. Exploiting nanoscale processes and phenomena for quantum information science. 5. Expanding the national nanoelectronics research and manufacturing infrastructure network. -
FAQ: Sic MOSFET Application Notes
FAQ SiC MOSFET Description This document introduces the Frequently Asked Questions and answers of SiC MOSFET. © 20 21 2021-3-22 Toshiba Electronic Devices & Storage Corporation 1 Table of Contents Description .............................................................................................................................................................. 1 Table of Contents .................................................................................................................................................... 2 List of Figures / List of Tables ................................................................................................................................ 3 1. What is SiC ? ...................................................................................................................................................... 4 2. Is it possible to connect multiple SiC MOSFETs in parallel ? ........................................................................... 5 ............................................................................... 6 .................................................................................... 7 5. If Si IGBT replaced with SiC MOSFET, what will change ? ............................................................................. 8 6. Is there anything to note about the Gate drive voltage ? ..................................................................................... 9 RESTRICTIONS ON PRODUCT USE .............................................................................................................. -
The Bottom-Up Construction of Molecular Devices and Machines*
Pure Appl. Chem., Vol. 80, No. 8, pp. 1631–1650, 2008. doi:10.1351/pac200880081631 © 2008 IUPAC Nanoscience and nanotechnology: The bottom-up construction of molecular devices and machines* Vincenzo Balzani‡ Department of Chemistry “G. Ciamician”, University of Bologna, 40126 Bologna, Italy Abstract: The bottom-up approach to miniaturization, which starts from molecules to build up nanostructures, enables the extension of the macroscopic concepts of a device and a ma- chine to molecular level. Molecular-level devices and machines operate via electronic and/or nuclear rearrangements and, like macroscopic devices and machines, need energy to operate and signals to communicate with the operator. Examples of molecular-level photonic wires, plug/socket systems, light-harvesting antennas, artificial muscles, molecular lifts, and light- powered linear and rotary motors are illustrated. The extension of the concepts of a device and a machine to the molecular level is of interest not only for basic research, but also for the growth of nanoscience and the development of nanotechnology. Keywords: molecular devices; molecular machines; information processing; photophysics; miniaturization. INTRODUCTION Nanotechnology [1–8] is a frequently used word both in the scientific literature and in the common lan- guage. It has become a favorite, and successful, term among America’s most fraudulent stock promot- ers [9] and, in the venture capital world of start-up companies, is perceived as “the design of very tiny platforms upon which to raise enormous amounts of money” [1]. Indeed, nanotechnology is a word that stirs up enthusiasm or fear since it is expected, for the good or for the bad, to have a strong influence on the future of mankind. -
Noise and Interference Management in 3-D Integrated Wireless Systems
Noise and Interference Management in 3-D Integrated Wireless Systems Emre Salman, Alex Doboli, and Milutin Stanacevic Department of Electrical and Computer Engineering Stony Brook University Stony Brook, New York 11794 [emre, adoboli, milutin]@ece.sunysb.edu Abstract—Three-dimensional (3-D) integration technology is an emerging candidate to alleviate the interconnect bottleneck by utilizing the third dimension. One of the important advantages of the 3-D technology is the capability to stack memory on top of the processor cores, significantly increasing the memory bandwidth. The application of 3-D integration to high perfor- mance processors, however, is limited by the thermal constraints since transferring the heat within a monolithic 3-D system is a challenging task. Alternatively, the application of 3-D integration to life sciences has not yet received much attention. Since typical applications in life sciences consume significantly less energy, the thermal constraints are relatively alleviated. Alternatively, interplane noise coupling emerges as a fundamental limitation in these highly heterogeneous 3-D systems. Various noise coupling paths in a heterogeneous 3-D system are investigated in this paper. Fig. 1. Monolithic 3-D integration technology where through silicon vias Contrary to the general assumption, 3-D systems are shown to (TSVs) are utilized to achieve communication among the planes [2]. be highly susceptible to substrate noise coupling. The effects of through silicon vias (TSVs) on noise propagation are also discussed. Furthermore, design methodologies are proposed to efficiently analyze and reduce noise coupling in 3-D systems. One of the primary limitations of these multi-core proces- sors utilizing 3-D integration technology is the temperature I. -
Mobile Communication Using Radio Frequency MEMS Switches Nasreen Sultana1, Dr
IJRECE VOL. 2 ISSUE 2 APR-JUNE 2014 ISSN: 2348-2281 (ONLINE) Mobile Communication using Radio Frequency MEMS Switches Nasreen Sultana1, Dr. K. Ragini2 1Assoc Professor, ECE, Shadan Womens College of Engg. and Technology, JNTUH, Hyderabad, AP, India 2Professor, ECE, G.Narayanamma Institute of Technology and Science, JNTUH, Hyderabad, AP, India Abstract: Radio Frequency MEMS (micro- are advancing MEMS (Micro-Electro-Mechanical Systems) electromechanical systems) have been keyed out as Technology to create ultra-small switches that could have an technology areas that hold the potential to provide a major ultra-large impact on system design that will drive mobile impact on existing system architectures in wireless sensors devices of the future. These metal switches, which are no and mobile communications. Switched capacitors based on larger than the width of a human hair, can master the flow of radio frequency microelectromechanical systems (RF electricity of an arreay of electrical systems- from high- MEMS) can enable a breakthrough in radio technology. This power devices that use kilowatts of power, of an ordinary paper describes these technologies should bring down light bulb. weight, cost, size, and power dissipation by a few orders of MEMS are nowadays used in a wide range of everyday magnitude. Their switching principle is founded along the life applications, but also in space, instrumentation, RF mechanical movement of the dentures of a parallel plate applications... Their broadest use is in the sensor area capacitor using the electrostatic force. The resulting conflict andwireless communicational area. There exist MEMS in capacitance is used to switch an RF signal by MEMS.