THE GREAT MINIATURIZATION: SYSTEMS and PACKAGING Technology Enabling Systems in Your Pocket and Beyond
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Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
The Evolving Role of Semiconductor Consortia in the United States and Japan
Portland State University PDXScholar Business Faculty Publications and Presentations The School of Business Fall 1998 The Evolving Role of Semiconductor Consortia in the United States and Japan Rose Marie Ham University of California - Berkeley Greg Linden University of California - Berkeley Melissa M. Appleyard Portland State University, [email protected] Follow this and additional works at: https://pdxscholar.library.pdx.edu/busadmin_fac Part of the Business Administration, Management, and Operations Commons Let us know how access to this document benefits ou.y Citation Details Ham, R., Linden, G., & Appleyard, M. M. (1998). The Evolving Role of Semiconductor Consortia in the United States and Japan. California Management Review, 41(1), 137-163. This Article is brought to you for free and open access. It has been accepted for inclusion in Business Faculty Publications and Presentations by an authorized administrator of PDXScholar. Please contact us if we can make this document more accessible: [email protected]. The Evolving Role of Semiconductor Consortia in the United States and Japan Rose Marie Ham Greg Linden Melissa M. Appleyard ince the late 1970s, governments throughout the industrialized economics have proclaimed the benefits of research consortia. In the United States, tor example, ihe 1984 National Cooperative Research SAct (NCRA) relaxed U.S. antitrust laws to encourage the formation of research consortia hy firms in the same industry; by the end of 1995, over 575 consortia had heen registered under the NCRA in a variety of -
ECTC 2021 Conference Program
WELCOME TO THE 71st ECTC FROM THE GENERAL CHAIR AND PROGRAM CHAIR On behalf of the Program Committee and Executive ECTC will also feature a record twelve special sessions with Committee, it is our pleasure to welcome you to the 71st invited industry experts covering several important and Electronic Components and Technology Conference (ECTC), emerging topic areas. Rozalia Beica and Ed Sperling will chair which will be held virtually on a digital platform from June 1 a special session covering “Market Trends and Geopolitical until July 4, 2021. This premier international conference brings and Economic Outlook” addressing market trends in the together key stakeholders of the global microelectronics semiconductor industry, emerging applications, economic and packaging industry, such as semiconductor companies, foundry geopolitical uncertainties, and impact on the global supply chain and OSAT service providers, equipment manufacturers, in microelectronics packaging. The ECTC Panel Session will be materials suppliers, research institutions and universities all chaired by IEEE EPS President Christopher Bailey and IEEE EPS under one roof. Vice President of Conferences Sam Karikalan. This panel session The virtual platform will allow for recorded presentations of all will hear from several leading companies who will discuss their technical session talks to be available on-demand throughout future vision for advanced electronics packaging. the conference. During the last two weeks of the conference, We are continuing our tradition and bringing back the a live teleconferencing meeting for each session will be held networking events focused on young professionals and diversity. by the session chairs; all the presenters of the session will be Yan Liu and Adeel Bajwa will chair the Young Professionals available live to field questions from the attendees. -
Advanced Semiconductor Engineering, Inc
Advanced Semiconductor Engineering, Inc. FOR IMMEDIATE RELEASE Contact: ASE, Inc. Joseph Tung, CFO / Vice President Freddie Liu, Assistant Vice President Room 1901, No. 333, Section 1 Keelung Road, Taipei, Taiwan, 110 [email protected] Tel: + 886-2-8780-5489 http://www.aseglobal.com Fax: + 886-2-2757-6121 ADVANCED SEMICONDUCTOR ENGINEERING, INC. REPORTS YEAR 2002 FIRST-QUARTER FINANCIAL RESULTS Taipei, Taiwan, R.O.C., April 24, 2002 – Advanced Semiconductor Engineering, Inc. (TAIEX: 2311, NYSE: ASX), (“ASE”, or the “Company”), one of the world’s largest independent providers of semiconductor packaging and testing services, today reported quarterly sales of NT$10,044 million, down 2% sequentially and down 11% versus a year ago period. Net loss amounted to NT$230 million in the first quarter ended March 31, 2002. Fully diluted loss per share for the quarter was NT$0.07, or US$0.01 per ADS. “We believed that we are off to a good start in the first quarter of this year as our revenues exceeded the normal seasonal pattern.” commented Mr. Jason Chang, Chairman of ASE Group. “We have seen demand for our advanced assembly and test capacity continued to grow in a very healthy momentum, and the strength came from across all end markets in a wide customer base. The product generation change and introduction of new devices by our customers shall be the major driving forces for our business in the first half of this year. The utilization rate of our advanced assembly and test capacity shall remain at a high level this quarter as output of finer geometry wafers continues to rise. -
Timeline of the Semiconductor Industry in South Portland
Timeline of the Semiconductor Industry in South Portland Note: Thank you to Kathy DiPhilippo, Executive Director/Curator of the South Portland Historical Society and Judith Borelli, Governmental Relations of Texas Inc. for providing some of the information for this timeline below. Fairchild Semiconductor 1962 Fairchild Semiconductor (a subsidiary of Fairchild Camera and Instrument Corp.) opened in the former Boland's auto building (present day Back in Motion) at 185 Ocean Street in June of 1962. They were there only temporarily, as the Western Avenue building was still being constructed. 1963 Fairchild Semiconductor moves to Western Avenue in February 1963. 1979 Fairchild Camera and Instrument Corp. is acquired/merged with Schlumberger, Ltd. (New York) for $363 million. 1987 Schlumberger, Ltd. sells its Fairchild Semiconductor Corp. subsidiary to National Semiconductor Corp. for $122 million. 1997 National Semiconductor sells the majority ownership interest in Fairchild Semiconductor to an investment group (made up of Fairchild managers, including Kirk Pond, and Citcorp Venture Capital Ltd.) for $550 million. Added Corporate Campus on Running Hill Road. 1999 In an initial public offering in August 1999, Fairchild Semiconductor International, Inc. becomes a publicly traded corporation on the New York Stock Exchange. 2016 Fairchild Semiconductor International, Inc. is acquired by ON Semiconductor for $2.4 billion. National Semiconductor 1987 National Semiconductor acquires Fairchild Semiconductor Corp. from Schlumberger, Ltd. for $122 million. 1995 National Semiconductor breaks ground on new 200mm factory in December 1995. 1996 National Semiconductor announces plans for a $600 million expansion of its facilities in South Portland; construction of a new wafer fabrication plant begins. 1997 Plant construction for 200mm factory completed and production starts. -
The Economic Impact of Moore's Law: Evidence from When It Faltered
The Economic Impact of Moore’s Law: Evidence from when it faltered Neil Thompson Sloan School of Management, MIT1 Abstract “Computing performance doubles every couple of years” is the popular re- phrasing of Moore’s Law, which describes the 500,000-fold increase in the number of transistors on modern computer chips. But what impact has this 50- year expansion of the technological frontier of computing had on the productivity of firms? This paper focuses on the surprise change in chip design in the mid-2000s, when Moore’s Law faltered. No longer could it provide ever-faster processors, but instead it provided multicore ones with stagnant speeds. Using the asymmetric impacts from the changeover to multicore, this paper shows that firms that were ill-suited to this change because of their software usage were much less advantaged by later improvements from Moore’s Law. Each standard deviation in this mismatch between firm software and multicore chips cost them 0.5-0.7pp in yearly total factor productivity growth. These losses are permanent, and without adaptation would reflect a lower long-term growth rate for these firms. These findings may help explain larger observed declines in the productivity growth of users of information technology. 1 I would like to thank my PhD advisors David Mowery, Lee Fleming, Brian Wright and Bronwyn Hall for excellent support and advice over the years. Thanks also to Philip Stark for his statistical guidance. This work would not have been possible without the help of computer scientists Horst Simon (Lawrence Berkeley National Lab) and Jim Demmel, Kurt Keutzer, and Dave Patterson in the Berkeley Parallel Computing Lab, I gratefully acknowledge their overall guidance, their help with the Berkeley Software Parallelism Survey and their hospitality in letting me be part of their lab. -
Advanced Semiconductor Engineering, Inc. 2003 Annual Report
Stock Code: 2311 NYSE: ASX Advanced Semiconductor Engineering, Inc. 2003 Annual Report March 26, 2004 This report is available on the following websites： 1. Market Observation Post System：http://mops.tse.com.tw/ 2. ASE website：http://www.aseglobal.com Summary Translation Spokesperson: Richard H. P. Chang Title: Vice Chairman and President Acting Spokespersons: Joseph Tung Title: Chief Financial Officer Freddie Liu Title: Director, Financial Division Tel: 886-2-87805489 E-mail: [email protected] Head Office Taipei Office Address: 26 Chin 3rd Rd., N.E.P.Z., Nantz, Room 1901, F19, 333 Keelung Road, Kaohsiung, Taiwan Section 1, Taipei, Taiwan Tel: 886-7-3617131~8 886-2-87805489 Fax: 886-7-3613094、 3614546 886-2-27576121 Website: http://www.aseglobal.com Plant Facilities: (Tel：886-7-3617131) Plant 1: 26 Chin 3rd Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 2: F7 ~ 10, 66 Chin 6th Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 3: F2, 47 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 4: F3, 47 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 5: F4 ~ 6, 66 Chin 6th Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 6: F1 & F4, 47 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 7: F2 ~ 3, 66 Chin 6th Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 8: 25 Kai Fa Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 9: F8, 109 Nei Huan N. Rd., N.E.P.Z., Nantz, Kaohsiung, Taiwan Plant 10: F10, 109 Nei Huan N. -
Nanoelectronics
Highlights from the Nanoelectronics for 2020 and Beyond (Nanoelectronics) NSI April 2017 The semiconductor industry will continue to be a significant driver in the modern global economy as society becomes increasingly dependent on mobile devices, the Internet of Things (IoT) emerges, massive quantities of data generated need to be stored and analyzed, and high-performance computing develops to support vital national interests in science, medicine, engineering, technology, and industry. These applications will be enabled, in part, with ever-increasing miniaturization of semiconductor-based information processing and memory devices. Continuing to shrink device dimensions is important in order to further improve chip and system performance and reduce manufacturing cost per bit. As the physical length scales of devices approach atomic dimensions, continued miniaturization is limited by the fundamental physics of current approaches. Innovation in nanoelectronics will carry complementary metal-oxide semiconductor (CMOS) technology to its physical limits and provide new methods and architectures to store and manipulate information into the future. The Nanoelectronics Nanotechnology Signature Initiative (NSI) was launched in July 2010 to accelerate the discovery and use of novel nanoscale fabrication processes and innovative concepts to produce revolutionary materials, devices, systems, and architectures to advance the field of nanoelectronics. The Nanoelectronics NSI white paper1 describes five thrust areas that focus the efforts of the six participating agencies2 on cooperative, interdependent R&D: 1. Exploring new or alternative state variables for computing. 2. Merging nanophotonics with nanoelectronics. 3. Exploring carbon-based nanoelectronics. 4. Exploiting nanoscale processes and phenomena for quantum information science. 5. Expanding the national nanoelectronics research and manufacturing infrastructure network. -
Cad Veteran Richard Smith Joins Micro Magic, Inc. As Senior Technical Advisor
CAD Veteran Richard Smith Joins Micro Magic, Inc. Press Release CAD VETERAN RICHARD SMITH JOINS MICRO MAGIC, INC. AS SENIOR TECHNICAL ADVISOR “Dick brings a tremendous Sunnyvale, California -- June 7, 1999 -- Micro Magic, Inc. wealth of technical and (MMI) today announced the appointment of Dr. Richard business experience in C. Smith as senior technical advisor. Smith comes to MMI EDA to Micro Magic from Cadence Design Systems, Inc., where he was most re- and its customers. Dick cently a senior program manager in consulting services. At will be responsible for Cadence, he also served in software support management assisting with product and as the program manager for the Texas Instruments needs and definitions and account. Smith has held technical and management posi- for launching a design tions with Texas Instruments, National Semiconductor, and center and sales support capability in the Central Hewlett-Packard. region of the U.S.” Mark Santoro, MMI's president and CEO, stated, "Dick Mark Santoro President brings a tremendous wealth of technical and business expe- and CEO Micro Magic, rience in EDA to Micro Magic and its customers. Dick will Inc. be responsible for assisting with product needs and defini- tions and for launching a design center and sales support Contact: Heidi Vantulden capability in the Central region of the U.S." Armstrong Kendall, Inc. 503-672-4685 "MMI has a fresh new approach to EDA. It's a company of highly skilled design engineers who create very high per- heidi@armstrongkendall. formance processors and memories, and the EDA software com environment for managing the entire process," stated Dr. -
FAQ: Sic MOSFET Application Notes
FAQ SiC MOSFET Description This document introduces the Frequently Asked Questions and answers of SiC MOSFET. © 20 21 2021-3-22 Toshiba Electronic Devices & Storage Corporation 1 Table of Contents Description .............................................................................................................................................................. 1 Table of Contents .................................................................................................................................................... 2 List of Figures / List of Tables ................................................................................................................................ 3 1. What is SiC ? ...................................................................................................................................................... 4 2. Is it possible to connect multiple SiC MOSFETs in parallel ? ........................................................................... 5 ............................................................................... 6 .................................................................................... 7 5. If Si IGBT replaced with SiC MOSFET, what will change ? ............................................................................. 8 6. Is there anything to note about the Gate drive voltage ? ..................................................................................... 9 RESTRICTIONS ON PRODUCT USE .............................................................................................................. -
The Bottom-Up Construction of Molecular Devices and Machines*
Pure Appl. Chem., Vol. 80, No. 8, pp. 1631–1650, 2008. doi:10.1351/pac200880081631 © 2008 IUPAC Nanoscience and nanotechnology: The bottom-up construction of molecular devices and machines* Vincenzo Balzani‡ Department of Chemistry “G. Ciamician”, University of Bologna, 40126 Bologna, Italy Abstract: The bottom-up approach to miniaturization, which starts from molecules to build up nanostructures, enables the extension of the macroscopic concepts of a device and a ma- chine to molecular level. Molecular-level devices and machines operate via electronic and/or nuclear rearrangements and, like macroscopic devices and machines, need energy to operate and signals to communicate with the operator. Examples of molecular-level photonic wires, plug/socket systems, light-harvesting antennas, artificial muscles, molecular lifts, and light- powered linear and rotary motors are illustrated. The extension of the concepts of a device and a machine to the molecular level is of interest not only for basic research, but also for the growth of nanoscience and the development of nanotechnology. Keywords: molecular devices; molecular machines; information processing; photophysics; miniaturization. INTRODUCTION Nanotechnology [1–8] is a frequently used word both in the scientific literature and in the common lan- guage. It has become a favorite, and successful, term among America’s most fraudulent stock promot- ers [9] and, in the venture capital world of start-up companies, is perceived as “the design of very tiny platforms upon which to raise enormous amounts of money” [1]. Indeed, nanotechnology is a word that stirs up enthusiasm or fear since it is expected, for the good or for the bad, to have a strong influence on the future of mankind. -
Micromanufacturing and Fabrication of Microelectronic Devices
Micromanufacturing and Fabrication of Microelectronic PART Devices •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••V The importance of the topics covered in the following two chapters can best be appreciated by considering the manufacture of a simple metal spur gear. It is impor- tant to recall that some gears are designed to transmit power, such as those in gear boxes, yet others transmit motion, such as in rack and pinion mechanisms in auto- mobile steering systems. If the gear is, say, 100 mm (4 in.) in diameter, it can be produced by traditional methods, such as starting with a cast or forged blank, and machining and grinding it to its final shape and dimensions. A gear that is only 2 mm (0.080 in.) in diameter, on the other hand, can be difficult to produce by these meth- ods. If sufficiently thin, the gear could, for example, be made from sheet metal, by fine blanking, chemical etching, or electroforming. If the gear is only a few micrometers in size, it can be produced by such tech- niques as optical lithography, wet and dry chemical etching, and related processes. A gear that is only a nanometer in diameter would, however, be extremely difficult to produce; indeed, such a gear would have only a few tens of atoms across its surface. The challenges faced in producing gears of increasingly smaller sizes is highly informative, and can be put into proper perspective by referring to the illustration of length scales shown in Fig. V.1. Conventional manufacturing processes, described in Chapters 11 through 27, typically produce parts that are larger than a millimeter or so, and can be described as visible to the naked eye.