Xii Proceedings

Sociedad Mexicana de Ciencias y Tecnología de Superficies y Materiales A.C. XII International Conference on Surfaces, Materials and Vacuum September 23-27 2019, San Luis Potosi, S.L.P. México PROCEEDINGS Departamento de Física XII International Conference on Surfaces, Materials and Vacuum September 23rd to 27th, 2019 / San Luis Potosí, México ORGANIZING INTERNATIONAL SCIENTIFIC PROGRAM COMMITTEE COMMITEE COMMITTEE Advanced and Multifunctional Ceramics Servando Aguirre Tostado Michael Springborg Jesús Heiras Aguirre (CNYN-UNAM) CIMAV Physical and Theoretical Chemistry, José Trinidad Elizalde Galindo (UACJ) University of Saarland, Germany Atomic Layer Deposition Emmanuel Haro Poniatowski Pierre Giovanni Mani González (UACJ) UAM-Iztapalapa Talat S. Rahman, Department of Edgar López Luna (UASLP) Physics University of Central Florida, Hugo Tiznado:(CNYN-UNAM) Biomaterials and Polymers Eduardo Martinez Guerra USA César Marquez Beltrán (BUAP) CIMAV Amir Maldonado Arce (USON) Sergio E. Ulloa Department of Physics, Characterization and Metrology Mildred Quintana Ohio University, USA Roberto Machorro (CNYN-UNAM) UASLP Luminescence Phenomena: Materials and Rubén Barrera Pérez Instituto de Física, Applications Leticia Pérez Arrieta UNAM, México Salvador Carmona Téllez (CICATA LEGARIA-IPN) UAZ Gilberto Alarcón Flores (CICATA lLEGARIA-IPN) Isaac Hernández Calderón Microelectronics and MEMS Cristo Manuel Yee Rendón Departamento de Física, CINVESTAV, Norberto Hernandez Como (Centro de Nanotecnologia, IPN) UAS IPN, México Israel Mejia Silva (CIDESI)) Nanostructures Gregorio Hernández Cocoletzi Pedro Serena Yenny Casallas ( UPIITA-IPN ) IFUAP Instituto de Ciencia de Materiales de Ángel Gabriel Rodríguez Vázquez (CIACYT -UASLP) Madrid, España Plasma and Vacuum José G. Quiñones-Galván, (CUCEI, UdeG) Miguel Ángel Santana-Aranda, (CUCEI, UdeG) Renewable Energy: Solar Cells and Materials Issis Claudette Romero Ibarra (UPIITA-IPN) LOCAL Mario Fidel García Sánchez (UPIITA-IPN) COMMITTEE Semiconductors Salvador Gallardo (CINVESTAV-DF) Surfaces and Interfaces Leonardo Morales de la Garza (CNyN-UNAM) Esteban Cruz Hernández Mario Farás Sánchez (CNYN-UNAM) CIACYT, UASLP Theory and Simulation of Materials Raul Esquivel (IF-UAM) Hugo R. Navarro Contreras María Teresa Romero de la Cruz (FCFM-UAdeC) CIACYT, UASLP Ariadna Sanchez (UAEH) Thin Films Alberto Duarte Moller, CIMAV-Chihuahua Edgar López Luna Tribology CIACYT, UASLP Enrique Camps Carvajal (ININ) Giovanni Ramirez (Bruker Nano Surfaces) Daniel U. Campos Delgado Science Outreach Facultad de Ciencias, UASLP Wilfrido Calleja (INAOE), Dolores García Toral (BUAP) Martha E. Compean Jasso Josefina Robles Aguilar (BUAP) Dalia Alejandra Mazón Montijo (CIMAV-Monterrey) Facultad de Ciencias, UASLP Héctor E. Flores Reyes Facultad de Estomatología, UASLP Armando Encinas Oropesa IPICYT Edgar A. Cerda Méndez IICO, UASLP 1 XII International Conference on Surfaces, Materials and Vacuum September 23rd to 27th, 2019 / San Luis Potosí, México Dear Colleagues, From the very beginning the Annual Conference of the Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales (SMCTSM, Mexican Society of Science and Technology of Surfaces and Materials) has been an important forum used by the Mexican scientific community for the discussion of scientific and technological topics related to research in the areas of surface and materials science. In these occasion we are pleased to welcome you to participate in the XII International Conference on Surface, Materials and Vacuum (ICSMV) which will held in San Luis Potosi , S.L.P. 23th to the 27th of September 2019. The scientific program of the Conference is divided into plenary conferences, short courses and the different symposia with oral and poster contributions. Additionally, to the scientific program, there is a symposium of Science Divulgation which is a traditional forum for the bringing together of students and the general public with the work undertaken and developed within our Society. We hope that the efforts of the organizing committee, sponsors and colleagues will result in an interesting friendly meeting, providing the opportunity for closer and new interactions between researchers coming from the diverse institutions. The SMCTM acknowledge the financial support of Consejo Nacional de Ciencias y Tecnologia (CONACYT) for the realization of XII ICSMV. The XII ICSMV Organizing Committee SMCTSM September 2019, San Luis Potosi , S.L.P México 2 XII -ICSMV September 23rd to 27th, 2019 / San Luis Potosí, México XII INTERNATIONAL CONFERENCE IN SURFACES, MATERIALS AND VACUUM PLENARY LECTURES 3 XII -ICSMV September 23rd to 27th, 2019 / San Luis Potosí, México OPENING TALK Defects in 2D Metal Dichalcogenides: Doping, Alloys, Interfaces, Vacancies and Their Effects in Electronics, Catalysis, Optical Emission and Bio- Applications Mauricio Terrones Pennsylvania State University/USA Semiconducting two-dimensional transition metal dichalcogenides (TMDs) such as MoS2, MoSe2, WSe2, and WS2 hold great promise for many novel applications. Recent years have therefore witnessed tremendous efforts on large scale manufacturing of these 2D crystals. A long-standing puzzle in the field is the effect of different types of defects in their electronic, magnetic, catalytic and optical properties. In this presentation an overview of different defects in transmission metal di-chalcogenides (TMDs) will be presented [1,2]. We will define the dimensionalities and different atomic structures of defects, and discuss how these defects could be imaged with novel optical-driven techniques. We will emphasize doping and alloying in monolayers of MoS2 and WS2, and describe their implications in electronic and thermal transport. We will also describe the catalytic effects of edges, vacancies and local strain observed in MoxW(1-x)S2 monolayers by correlating the hydrogen evolution reaction (HER) with aberration corrected scanning transmission electron microscopy (AC-HRSTEM) [3]. Our findings demonstrates that it is now possible to use chalcogenide layers for the fabrication of more effective catalytic substrates, however, defect control is required to tailor their performance. By studying photoluminescence spectra, atomic structure imaging, and band structure calculations, we also demonstrate that the most dominating synthetic defect—sulfur monovacancies in TMDs, is responsible for a new low temperature excitonic transition peak in photoluminescence 300 meV away from the neutral exciton emission [4]. We further show that these neutral excitons bind to sulfur mono-vacancies at low temperature, and the recombination of bound excitons provides a unique spectroscopic signature of sulfur mono-vacancies [4]. However, at room temperature, this unique spectroscopic signature completely disappears due to thermal dissociation of bound excitons [4]. One- dimensional hetero-interfaces in TMDs will be shown by AC-HRSTEM in conjunction with their non-linear optical emission, constituting a new way to image 1D defects [5]. Finally, the electronic effects of C-H defects within TMDs will be discussed, as p-type doping could be controlled by the presence of C within TMDs [6]. 4 XII -ICSMV September 23rd to 27th, 2019 / San Luis Potosí, México References: [1] Z. Lin, M. Terrones, et al. “Defect engineering of two-dimensional transition metal dichalcogenides”. 2D Materials 3 (2016) 022002. [2] R. Lv, M. Terrones, et al. "Two-dimensional transition metal dichalcogenides: Clusters, ribbons, sheets and more". Nano Today 10 (2015) 559-592. [3] Y. Lei, M. Terrones, et al. "Low temperature synthesis of heterostructures of transition metal dichalcogenide alloys (WxMo1-xS2) and graphene with superior catalytic performance for hydrogen evolution". ACS Nano, 11 (2017), 5103-5112. [4] V. Carozo, M. Terrones, et al. “Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide”, Sci. Adv. 3 (2017), e1602813 [5] B. R. Carvalho, M. Terrones, L. M. Malard, et al. “Imaging of 1D defects in monolayer dichalcogenides”, submitted (2019). [6] F. Zhang, M. Terrones, et al. “Carbon Doping of WS2 Monolayers: Band Gap Reduction and P-type Doping Transport”, Sci. Adv. 5 (2019), eaav5003. 5 XII -ICSMV September 23rd to 27th, 2019 / San Luis Potosí, México PLENARY LECTURE I Spectromicroscopy as a powerful tool for Investigating nanostructures Carla Bittencourt Mons University /Belgium Limitations in characterization and theoretical modelling tools have been a major obstacle for the engineering of novel functional materials with properties enhanced by their nanoscale morphology, because detailed understanding of the structure–property–operando relationships are required. In this perspective technology has entered in a period of convergence between theory and characterization tools, traditional spectroscopic techniques such as Near Edge X- Ray Absorption Fine Structure (NEXAFS) and X-ray Photoelectron Spectroscopy (XPS) are being combined with microscopy to study individual nano-objects. In this context advances in the design and fabrication of x-ray focusing systems allow modifying conventional X-ray spectroscopies using synchrotron light to be used to study individual nanostructures and selected regions of a nanoscale sample. These spectroscopies are amongst the most powerful tools in material science providing elemental, electronic, structural and chemical information. Recent trends include in-operando analysis of individual nanostructures. In my talk I will overview the development of spectromicroscopy

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