Application of High-κ Gate Dielectrics and Metal Gate Electrodes to enable Silicon and Non-Silicon Logic Nanotechnology Robert Chau, Justin Brask, Suman Datta, Gilbert Dewey, Mark Doczy, Brian Doyle, Jack Kavalieros, Ben Jin, Matthew Metz, Amlan Majumdar, and Marko Radosavljevic Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA Email:
[email protected] Abstract High-κ gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging non-silicon nanoelectronic transistors. In addition, high-κ gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high ION/IOFF ratios. Keywords: Nanotechnology; non-silicon; high-κ dielectric; metal gate; high-mobility 1. Introduction for high-performance and low-power CMOS applications in the 45 nm node and beyond. In Since the advent of the metal-oxide- addition to facilitating standard Si CMOS transistors, semiconductor (MOS) system over 40 years ago, the the high-κ/metal gate combination is also important SiO2 gate oxide has been serving as the key enabling for enabling future high-performance and low gate- material in scaling silicon CMOS technology. leakage emerging nanoelectronic transistors built However, continued SiO2 gate oxide scaling is upon non-silicon high-mobility materials, e.g. Ge, becoming exceedingly difficult since (a) the gate carbon nanotubes, and III-V substrates. The enabling oxide leakage is increasing with decreasing SiO2 of high-performance and low gate-leakage silicon thickness, and (b) SiO2 is running out of atoms for and non-silicon transistor nanotechnology research further scaling.