Temperature Compensation Circuit for ISFET Sensor
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT Murat Baylav
Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 2010 Ion-sensitive field effect transistor (ISFET) for MEMS multisensory chips at RIT Murat Baylav Follow this and additional works at: http://scholarworks.rit.edu/theses Recommended Citation Baylav, Murat, "Ion-sensitive field effect transistor (ISFET) for MEMS multisensory chips at RIT" (2010). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by the Thesis/Dissertation Collections at RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. Title Page Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT By Murat Baylav A Thesis Submitted In Partial Fulfillment of the Requirements of the Degree of Master of Science in Microelectronic Engineering Approved by: Professor ___________________________________ Date: __________________ Dr. Lynn F. Fuller (Thesis Advisor) Professor ___________________________________ Date: __________________ Dr. Karl D. Hirschman (Thesis Committee Member) Professor ___________________________________ Date: __________________ Dr. Santosh K. Kurinec (Thesis Committee Member) Professor ___________________________________ Date: __________________ Dr. Robert Pearson (Director, Microelectronic Engineering Program) Professor ___________________________________ Date: __________________ Dr. Sohail Dianat (Chair, Electrical -
Discrete Cosine Transform Based Image Fusion Techniques VPS Naidu MSDF Lab, FMCD, National Aerospace Laboratories, Bangalore, INDIA E.Mail: [email protected]
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by NAL-IR Journal of Communication, Navigation and Signal Processing (January 2012) Vol. 1, No. 1, pp. 35-45 Discrete Cosine Transform based Image Fusion Techniques VPS Naidu MSDF Lab, FMCD, National Aerospace Laboratories, Bangalore, INDIA E.mail: [email protected] Abstract: Six different types of image fusion algorithms based on 1 discrete cosine transform (DCT) were developed and their , k 1 0 performance was evaluated. Fusion performance is not good while N Where (k ) 1 and using the algorithms with block size less than 8x8 and also the block 1 2 size equivalent to the image size itself. DCTe and DCTmx based , 1 k 1 N 1 1 image fusion algorithms performed well. These algorithms are very N 1 simple and might be suitable for real time applications. 1 , k 0 Keywords: DCT, Contrast measure, Image fusion 2 N 2 (k 1 ) I. INTRODUCTION 2 , 1 k 2 N 2 1 Off late, different image fusion algorithms have been developed N 2 to merge the multiple images into a single image that contain all useful information. Pixel averaging of the source images k 1 & k 2 discrete frequency variables (n1 , n 2 ) pixel index (the images to be fused) is the simplest image fusion technique and it often produces undesirable side effects in the fused image Similarly, the 2D inverse discrete cosine transform is defined including reduced contrast. To overcome this side effects many as: researchers have developed multi resolution [1-3], multi scale [4,5] and statistical signal processing [6,7] based image fusion x(n1 , n 2 ) (k 1 ) (k 2 ) N 1 N 1 techniques. -
An Extended CMOS ISFET Model Incorporating the Physical Design
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Spiral - Imperial College Digital Repository IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. XXX, NO. XXX, XXX XXX 1 An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation Yan Liu, Student Member, IEEE, Pantelis Georgiou, Member, IEEE, Themistoklis Prodromakis, Member, IEEE, Timothy G. Constandinou, Senior Member, and Christofer Toumazou, Fellow, IEEE Abstract—This paper presents an extended model for the as large-scale, highly-integrated chemical sensor arrays [4], CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), in- [6]. corporating design parameters associated with the physical In this paper we present an extended model for CMOS- geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by based ISFETs to include both the first order effects, (i.e. taking into account the effects of non-idealities such as threshold intrinsic dimension-related characteristics) and second order voltage variation and sensor noise. The model is evaluated effects, (i.e. non-linear characteristics). By focusing on the through a number of devices with varying design parameters effect of varying the design parameters (i.e physical dimen- (chemical sensing area and MOSFET dimensions) fabricated in sions) a capacitance-based model is derived which includes all a commercially-available 0.35µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift and noise capacitive structures, the values of which are directly related were measured and compared to the simulated results. The to physical dimensions. -
An Integrated Semiconductor Device Enabling Non-Optical Genome Sequencing
ARTICLE doi:10.1038/nature10242 An integrated semiconductor device enabling non-optical genome sequencing Jonathan M. Rothberg1, Wolfgang Hinz1, Todd M. Rearick1, Jonathan Schultz1, William Mileski1, Mel Davey1, John H. Leamon1, Kim Johnson1, Mark J. Milgrew1, Matthew Edwards1, Jeremy Hoon1, Jan F. Simons1, David Marran1, Jason W. Myers1, John F. Davidson1, Annika Branting1, John R. Nobile1, Bernard P. Puc1, David Light1, Travis A. Clark1, Martin Huber1, Jeffrey T. Branciforte1, Isaac B. Stoner1, Simon E. Cawley1, Michael Lyons1, Yutao Fu1, Nils Homer1, Marina Sedova1, Xin Miao1, Brian Reed1, Jeffrey Sabina1, Erika Feierstein1, Michelle Schorn1, Mohammad Alanjary1, Eileen Dimalanta1, Devin Dressman1, Rachel Kasinskas1, Tanya Sokolsky1, Jacqueline A. Fidanza1, Eugeni Namsaraev1, Kevin J. McKernan1, Alan Williams1, G. Thomas Roth1 & James Bustillo1 The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. -
Dynamic Ph Sensor with Embedded Calibration Scheme by Advanced CMOS Finfet Technology
sensors Article Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology Chien-Ping Wang 1, Ying-Chun Shen 2, Peng-Chun Liou 1, Yu-Lun Chueh 2, Yue-Der Chih 3, Jonathan Chang 3, Chrong-Jung Lin 1 and Ya-Chin King 1,* 1 Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; [email protected] (C.-P.W.); [email protected] (P.-C.L.); [email protected] (C.-J.L.) 2 Institute of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; [email protected] (Y.-C.S.); [email protected] (Y.-L.C.) 3 Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan; [email protected] (Y.-D.C.); [email protected] (J.C.) * Correspondence: [email protected]; Tel.: +886-3-5162219 or +886-3-5721804 or +1-123914307 Received: 4 March 2019; Accepted: 29 March 2019; Published: 2 April 2019 Abstract: In this work, we present a novel pH sensor using efficient laterally coupled structure enabled by Complementary Metal-Oxide Semiconductor (CMOS) Fin Field-Effect Transistor (FinFET) processes. This new sensor features adjustable sensitivity, wide sensing range, multi-pad sensing capability and compatibility to advanced CMOS technologies. With a self-balanced readout scheme and proposed corresponding circuit, the proposed sensor is found to be easily embedded into integrated circuits (ICs) and expanded into sensors array. To ensure the robustness of this new device, the transient response and noise analysis are performed. In addition, an embedded calibration operation scheme is implemented to prevent the proposed sensing device from the background offset from process variation, providing reliable and stable sensing results. -
A Novel Coding Method for Radar Signal Waveform Design
APPLICATION OF ION SELECTIVE FIELD EFFECT TRANSISTOR FOR HYDROGEN ION MEASUREMENT SYSTEM Ibrahim Elkhier Hussien Arfeen1, Abdul Rasoul Jabar Kizar Alzubaidi2 1 Sudanese Standards and Metrology Organization, Port Sudan 2 Electronic Dept- Engineering College-Sudan University for science and Technology Received December 2010, accepted after revision June 2011 ُمـ ْســتَ ْخـلـَص َهذف هذا انبحث إنً دراصت تزانزصتىر تأثُز انًدبل كًحضبس كًُُبئٍ َضتخذو نًزاقبت اﻷس انهُذروخُنٍ فٍ يدبل انكًُُبء انتحهُهُت و انبُئُت. تعتًذ حضبصُت حضبس تزانزصتىر تأثُز انًدبل عهٍ نىع انًبدة اﻹنكتزونُت انًضتخذيت كًدش فٍ بىابت انتزانزصتىر. وَضتخذو فٍ يىاضع انقُبس انتٍ َصعب فُهب اصتخذاو انًحضبس انزخبخٍ انقببم نهكضز. تضتخذو دائزة إنكتزونُت نزبط يحضبس تزانزصتىر تأثُز انًدبل تًكنه ين انعًم بصىرة فعبنت فٍ انًذي ين اﻷس انهُذروخُنٍ 4 إنً 44. وظُفت انذائزة اﻹنكتزونُت هي تحىَم تُبر دخم انًحضبس انذٌ ًَثم قُى اﻷس انهُذروخنٍ إنً خهذ خزج يتنبصب. تى اختببر انتصًُى بىاصطت يحبنُم قُبصُت وخًضت أنىاع ين انًحبنُم انًبئُت وتى انحصىل عهً اننتبئح انًطهىبت. تى رصى انعﻻقت بُن اننتبئح انًتحصم عهُهب بىاصطت انذائزة اﻹنكتزونُت وقُى اﻷس انهُذروخُنٍ نبعض انًحبنُم انًبئُت. ABSTRACT This paper aims to study field effect transistors as chemical sensor used for monitoring hydrogen ion concentration (H+) measurement in chemical analysis and environment fields, to detect the pH of the subjected solution. The Ion-Selective Field Effect Transistor (ISFET) sensor sensitivity depends mainly on the choice of the gate dielectric material (Silicon Nitride Membrane). The Ion-Selective Field Effect Transistor is (ISFET) used in places where fragile glass electrodes will be damaged. The interface circuit supplies the sensor with a constant current and voltage. The pH value is identified from the output voltage of the circuit. -
Design of Low Noise Ph-ISFET Microsensors and Integrated Suspended Inductors with Increased Quality B
Design of low noise pH-ISFET microsensors and integrated suspended inductors with increased quality B. Palan To cite this version: B. Palan. Design of low noise pH-ISFET microsensors and integrated suspended inductors with increased quality. Micro and nanotechnologies/Microelectronics. Institut National Polytechnique de Grenoble - INPG, 2002. English. tel-00003085 HAL Id: tel-00003085 https://tel.archives-ouvertes.fr/tel-00003085 Submitted on 4 Jul 2003 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. ÁÆËÌÁÌÍÌ ÆÌÁÇÆÄ ÈÇÄ Ì ÀÆÁÉÍ Ê ÆÇÄ Ó Æ ØØÖÙ ÔÖ Ð ÐÓØ ÕÙ ÌÀ Ë Æ ÇÌÍÌ ÄÄ ÔÓÙÖ ÓØÒÖ Ð Ö ÇÌÍÊ Ð³ÁÆÈ Ì Ä³ÍÆÁÎÊËÁÌ ÌÀÆÁÉÍ ÌÀÉÍ ÈÊ Í ËÔÐØ ÅÖÓÐØÖÓÒÕÙ ÔÖÔÖ Ù Ð ÓÖØÓÖ ÌÁÅ Ò× Ð Ö Ð³!ÓÐ Ó !ØÓÖÐ ÄÌÊÇÆÁÉ͸ ÄÌÊÇÌÀÆÁÉ͸ ÍÌÇÅ ÌÁÉ͸ ÌÄÇÅÅÍÆÁ ÌÁÇÆË¸ ËÁÆ Ä Ø Ù ÔÖØÑÒØ Ð ÅÖÓÐØÖÓÒÕÙ¸ ÍÒÚÖר ÌÒÕÙ ÌÕÙ ´ÍÌ̵ ÈÖÙ ÔÖ×ÒØ Ø ×ÓÙØÒÙ ÔÙÐÕÙÑÒØ ÔÖ ÓÙ×ÐÚ È Ä Æ Ð ½ÑÖ× ¾¼¼¾ ÌØÖ ÇÆÈÌÁÇÆ ÅÁÊÇ ÈÌÍÊË ÔÀ¹ÁËÌ ÁÄ ÊÍÁÌ Ì ³ÁÆÍÌ ÆË ÁÆÌÊË ËÍËÈÆÍË ÇÊÌ ÌÍÊ ÉÍ ÄÁÌ É ß Ö !Ø ÙÖ× % Ø × & Ó ØÙÖ ÖÒÖ ÇÍÊÌÇÁË ÈÖÓ××ÙÖ ÅÖÓ×ÐÚÀÍËÃ ß ÂÍÊ( ź ÈÖÖ ÆÌÁÄ ¸ÈÖ×ÒØ ź ÖÒÖ ÇÍÊÌÇÁË ¸ÖØÙÖ Ø× ÌÁÅ -
A Novel MEMS Pressure Sensor with MOSFET on Chip
A Novel MEMS Pressure Sensor with MOSFET on Chip Zhao-Hua Zhang *, Yan-Hong Zhang, Li-Tian Liu, Tian-Ling Ren Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University Beijing 100084, China [email protected] Abstract—A novel MOSFET pressure sensor was proposed Figure 1. Two PMOSFET’s and two piezoresistors are based on the MOSFET stress sensitive phenomenon, in which connected to form a Wheatstone bridge. To obtain the the source-drain current changes with the stress in channel maximum sensitivity, these components are placed near the region. Two MOSFET’s and two piezoresistors were employed four sides of the silicon diaphragm, which are the high stress to form a Wheatstone bridge served as sensitive unit in the regions. The MOSFET’s has the same structure parameter novel sensor. Compared with the traditional piezoresistive W/L, same threshold voltage VT and gate-source voltage VGS pressure sensor, this MOSFET sensor’s sensitivity is improved (equal to VG-Vdd). They are designed to work in the significantly, meanwhile the power consumption can be saturation region. The piezoresistors also have the same decreased. The fabrication of the novel pressure sensor is low- resistance R . cost and compatible with standard IC process. It shows the 0 great promising application of MOSFET-bridge-circuit structure for the high performance pressure sensor. This kind of MEMS pressure sensor with signal process circuit on the same chip can be used in positive or negative Tire Pressure Monitoring System (TPMS) which is very hot in automotive electron research field. I. -
Simplifying Current Sensing (Rev. A)
Simplifying Current Sensing How to design with current sense amplifiers Table of contents Introduction . 3 Chapter 4: Integrating the current-sensing signal chain Chapter 1: Current-sensing overview Integrating the current-sensing signal path . 40 Integrating the current-sense resistor . 42 How integrated-resistor current sensors simplify Integrated, current-sensing PCB designs . 4 analog-to-digital converter . 45 Shunt-based current-sensing solutions for BMS Enabling Precision Current Sensing Designs with applications in HEVs and EVs . 6 Non-Ratiometric Magnetic Current Sensors . 48 Common uses for multichannel current monitoring . 9 Power and energy monitoring with digital Chapter 5: Wide VIN and isolated current sensors . 11 current measurement 12-V Battery Monitoring in an Automotive Module . 14 Simplifying voltage and current measurements in Interfacing a differential-output (isolated) amplifier battery test equipment . 17 to a single-ended-input ADC . 50 Extending beyond the maximum common-mode range of discrete current-sense amplifiers . 52 Chapter 2: Out-of-range current measurements Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements . 55 Measuring current to detect out-of-range conditions . 20 Monitoring current for multiple out-of-range Authors: conditions . 22 Scott Hill, Dennis Hudgins, Arjun Prakash, Greg Hupp, High-side motor current monitoring for overcurrent protection . 25 Scott Vestal, Alex Smith, Leaphar Castro, Kevin Zhang, Maka Luo, Raphael Puzio, Kurt Eckles, Guang Zhou, Chapter 3: Current sensing in Stephen Loveless, Peter Iliya switching systems Low-drift, precision, in-line motor current measurements with enhanced PWM rejection . 28 High-side drive, high-side solenoid monitor with PWM rejection . 30 Current-mode control in switching power supplies . -
Integrated Switch Current Sensor for Shortcircuit Protection and Current Control of 1.7-Kv Sic MOSFET Modules
Integrated Switch Current Sensor for Shortcircuit Protection and Current Control of 1.7-kV SiC MOSFET Modules Jun Wang, Zhiyu Shen, Rolando Burgos, Dushan Boroyevich Center for Power Electronics Systems Virginia Polytechnic Institute and State Blacksburg, VA 24061, USA [email protected] Abstract—This paper presents design and implementations of a switch current sensor based on Rogowski coils. The current sensor is designed to address the issue of using desaturation circuit to protect the SiC MOSFET during shortcircuit. Specifications are given to meet the application requirement for SiC MOSFETs. It is also designed for high accuracy and high bandwidth for converter current control. PCB-based winding and shielding layout is proposed to minimize the noises caused by the high dv/dt at switching. The coil on PCB are modeled by impedance measurement, thus the bandwidth of coil is calculated. At the end, various test results are demonstrated to validate the great performance of the switch current sensor. Fig. 1. Output characteristics comparison: Si IGBT vs. SiC MOSFET Keywords—current sensing; Rogowski; SiC MOSFET; shortcircuit; current control I. INTRODUCTION SiC MOSFET, as a wide-bandgap device, has superior performance for its high breakdown electric field, low on-state resistance, fast switching speed and high working temperature [1]. High switching speed enables high switching frequency, which improves the power density of high power converters. The gradual cost reduction and packaging advancement bring a Fig. 2. Principle shortcircuit current comparison: Si IGBT vs. SiC MOSFET promising trend of replacing the conventional Si IGBTs with SiC MOSFET modules in high power applications. quickly and reaches its saturation value, where the VCE hits the Shortcircuit protection is one of the major challenges protection threshold value (“Fault detection” in the Fig.1). -
Development of MEMS Capacitive Sensor Using a MOSFET Structure
Extended Summary 本文は pp.102-107 Development of MEMS Capacitive Sensor Using a MOSFET Structure Hayato Izumi Non-member (Kansai University, [email protected]) Yohei Matsumoto Non-member (Kansai University, [email protected] u.ac.jp) Seiji Aoyagi Member (Kansai University, [email protected] u.ac.jp) Yusaku Harada Non-member (Kansai University, [email protected] u.ac.jp) Shoso Shingubara Non-member (Kansai University, [email protected]) Minoru Sasaki Member (Toyota Technological Institute, [email protected]) Kazuhiro Hane Member (Tohoku University, [email protected]) Hiroshi Tokunaga Non-member (M. T. C. Corp., [email protected]) Keywords : MOSFET, capacitive sensor, accelerometer, circuit for temperature compensation The concept of a capacitive MOSFET sensor for detecting voltage change, is proposed (Fig. 4). This circuitry is effective for vertical force applied to its floating gate was already reported by compensating ambient temperature, since two MOSFETs are the authors (Fig. 1). This sensor detects the displacement of the simultaneously suffer almost the same temperature change. The movable gate electrode from changes in drain current, and this performance of this circuitry is confirmed by SPICE simulation. current can be amplified electrically by adding voltage to the gate, The operating point, i.e., the output voltage, is stable irrespective i.e., the MOSFET itself serves as a mechanical sensor structure. of the ambient temperature change (Fig. 5(a)). The output voltage Following this, in the present paper, a practical test device is has comparatively good linearity to the gap length, which would fabricated. -
THE IMPACT QF MOSFET-BASED SENSORS * Abstract The
CORE Metadata, citation and similar papers at core.ac.uk Provided by Universiteit Twente Repository Sensors and Actuators, 8 (1985) 109 - 127 109 THE IMPACT QF MOSFET-BASED SENSORS * P BERGVELD Department of Electrical Engmeermg, Twente Unwerslty of Technology, P 0 Box 217, 7500 AE Enschede (The Netherlands) (Received May 21,1985, m revlsed form October 4,1985, accepted October 29, 1985) Abstract The basic structure as well as the physical existence of the MOS held- effect transistor 1s without doubt of great importance for the development of a whole series of sensors for the measurement of physical and chemical environmental parameters The equation for the MOSFET dram current already shows a number of parameters that can be directly influenced by an external quantity, but small technological varlatlons of the orlgmal MOSFET configuration also give rise to a large number of sensing propertles All devices have m common that a surface charge 1s measured m a slllcon chip, depending on an electric field m the adJacent insulator FET-based sensors such as the GASFET, OGFET, ADFET, SAFET, CFT, PRESSFET, ISFET, CHEMFET, REFET, ENFET, IMFET, BIOFET, etc developed up to the present or those to be developed m the near future will be discussed m relation to the conslderatlons mentioned above 1. Introduction The measurement of semiconductor surface charge as a function of an electric field perpendicular to the surface was mentloned as early as 1925 by Llhenfeld and Hell as a possible principle for an electronic device that would not consume any power