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Temperature Compensation Circuit for ISFET Sensor Journal of Low Power Electronics and Applications Article Temperature Compensation Circuit for ISFET Sensor Ahmed Gaddour 1,2,* , Wael Dghais 2,3, Belgacem Hamdi 2,3 and Mounir Ben Ali 3,4 1 National Engineering School of Monastir (ENIM), University of Monastir, Monastir 5000, Tunisia 2 Electronics and Microelectronics Laboratory, LR99ES30, Faculty of Sciences of Monastir, University of Monastir, Monastir 5000, Tunisia; [email protected] (W.D.); [email protected] (B.H.) 3 Higher Institute of Applied Sciences and Technology of Sousse (ISSATSo), University of Sousse, Sousse 4003, Tunisia; [email protected] 4 Nanomaterials, Microsystems for Health, Environment and Energy Laboratory, LR16CRMN01, Centre for Research on Microelectronics and Nanotechnology, Sousse 4034, Tunisia * Correspondence: [email protected]; Tel.: +216-50998008 Received: 3 November 2019; Accepted: 21 December 2019; Published: 4 January 2020 Abstract: PH measurements are widely used in agriculture, biomedical engineering, the food industry, environmental studies, etc. Several healthcare and biomedical research studies have reported that all aqueous samples have their pH tested at some point in their lifecycle for evaluation of the diagnosis of diseases or susceptibility, wound healing, cellular internalization, etc. The ion-sensitive field effect transistor (ISFET) is capable of pH measurements. Such use of the ISFET has become popular, as it allows sensing, preprocessing, and computational circuitry to be encapsulated on a single chip, enabling miniaturization and portability. However, the extracted data from the sensor have been affected by the variation of the temperature. This paper presents a new integrated circuit that can enhance the immunity of ion-sensitive field effect transistors (ISFET) against the temperature. To achieve this purpose, the considered ISFET macro model is analyzed and validated with experimental data. Moreover, we investigate the temperature dependency on the voltage-current (I-V). Accordingly, an improved conditioning circuit is designed in order to reduce the temperature sensitivity on the measured pH values of the ISFET sensor. The numerical validation results show that the developed solution accurately compensates the temperature variation on the measured pH values at low power consumption. Keywords: ISFET sensor; conditioning circuit; temperature compensation; overall sensitivity 1. Introduction The ion-sensitive field-effect transistors (ISFETs) sensor has played a major role in enabling the fabrication of fully integrated CMOS-based chemical sensing systems. This has allowed several new application areas, with the most promising fields being ion imaging and full genome sequencing. However, the data from this sensor is strongly affected by the variation of the temperature. ISFET is a chemical sensitive microsensor that is based on the field effect transistor, which was invented by Bergveld in the 1970s [1]. The detection principle (shown in Figure1) of the ISFET sensor mechanism is centered on the charge adsorption at the solid ion interface between the electrolyte and the layer that contains the hydroxyl groups [2]. The assembly of hydroxyls can give or accept a proton. As a result of this process, a double layer capacity is generated with a potential variation that in its turn has an impact on the threshold voltage of the transistor according to the H+ ion concentration (i.e., pH) [2]. Moreover, ISFET is a compact sensor that enables a fast pH measurement. J. Low Power Electron. Appl. 2020, 10, 2; doi:10.3390/jlpea10010002 www.mdpi.com/journal/jlpea J. Low Power Electron. Appl. 2020, 10, 2 2 of 16 J. Low Power Electron. Appl. 2020, 10, x FOR PEER REVIEW 2 of 16 H+ Electrolyte H+ - - X + X H + Interfering H+ - H X- X Ion X- X- + X- H+ H H+ H+ + X- - H Ion H+ X + H + + + H+ H H H ISFET Array Vt Variation Figure 1. 3D representation of a 6 8 ion-sensitive field effect transistor (ISFET) array. Figure 1. 3D representation of a 6× × 8 ion-sensitive field effect transistor (ISFET) array. However,However, this this type type of of sensor sensor is is strongly strongly a ffaffectedected by by the the temperature temperature variation. variation. Therefore, Therefore, several several researchersresearchers [3 –[37–]7] have have proposed proposed various various temperature temperature compensation compensation systems systems such assuch the properas the choiceproper ofchoice a biasing of a current biasing for current a thermal for working a thermal point working to reduce point the ISFET’sto reduce temperature the ISFET dependency’s temperature [4]. Hence,dependency the use [4]. of aHence, junction the diode use of Zener a junction [4] for temperaturediode Zener compensation[4] for temperature on a single compensation ISFET sensor, on a thesingle employment ISFET sensor, of an the ISFET employment with a diff erentialof an ISFET configuration with a differential (use of a di ffconfigurationerential amplifier) (use of [8 ]a thatdifferential increases amplifier) the immunity [8] that against increases temperature the immunity variation, oragainst the combination temperature of variation attenuators, or and the acombin differentialation amplifier of attenuators alongside and with a differential Caprio’s quad amplifier [7] were alongside used in with order Caprio’s to enhance quad the [7] temperature were used stability.in order The to enhance trend of thethe recenttemperature works isstability. set on ISFET The sensortrend of arrays the recent [9–13], works but most is set of theseon ISFET researches sensor arearrays focused [9–13] on, thebut wearablemost of these and thermoelectricallyresearches are focused powered on the system wearable [11] and and on thermoelectrically achieving very highpowered accuracy system and [11] a small and settlingon achieving time [10very]. Theyhigh alsoaccuracy focused and on a small system-on-chip settling time for [10]. real-time They ionalso imagingfocused [13on], system but most-on of-chip them for did real not-time focus ion on imaging the temperature [13], but emostffect onof thethem response did not of focus the sensor on the andtemperature did not give effect a robuston the resp solutiononse toof reducethe sensor it. and From did these not give approaches, a robust itsolution can be to noticed reduce that it. From the temperaturethese approaches, dependency it can be is studiednoticed atthat a particular the temperature or in a narrowdependency range. is studied at a particular or in a narrowFor arange. wide range of pH values, the temperature compensation becomes more difficult, since the temperature’sFor a wide coe rangefficient of ofpH an values, electrochemical the temperature device compensation is a function ofbecom the pHes more value difficult [14]. Moreover,, since the thetemperature’s ISFET’s temperature coefficient dependency of an electrochemical tends to exhibit device a random is a function behavior of [15 the–17 pH]. The value straight-line-based [14]. Moreover, temperaturethe ISFET’s temperature compensation dependency limits its scopetends whento exhibit dealing a random with thebehavior actual [15 nonlinear–17]. The temperaturestraight-line- characteristicbased temperature of ISFET’s compensatio device atn limits different its scope values. when Furthermore, dealing with the the temperature actual nonlinear dependency temperature of measuringcharacteristic a circuit of ISFET’s also introduces device at additional different temperature values. Furthermore, influence on the the temperature measured data. dependency As a result, of themeasuring ease of combininga circuit also the introduces temperature additional compensation temperature circuit, influence the efficiency on the of measured the compensation data. As a technique,result, the the ease circuit of sensitivity, combining as wellthe astemperature the circuit simplicity compensation with respect circuit, to bodythe eefficiencyffects became of thethe keycompensation design considerations technique, inthe an circuit integrated sensitivity circuit, as design. well as Respectively, the circuit simplicity it is particularly with respect challenging to body foreffects ISFETs bec toame work the inkey an design environment considerations where the in required an integrated task is circuit to measure design. di ffRespectively,erent pH ranges it is alongsideparticularly diff challengingerent temperature for ISFET valuess to work [18,19 in]. an Nevertheless, environment thewhere conventional the required means task is used to measure in the signaldifferent processing pH range ofs ISFETs, alongside in particular different thetemperature elementary values current-voltage [18,19]. Nevertheless, conversion the circuits, conventional do not reachmeans optimal used performancein the signal since processing they are of sensitive ISFETs, toin light particular variations the andelementary temperature current especially-voltage whenconversion we use circuits, a sensor do array not reach (spread optimal of the performance error that is since related they to are temperature). sensitive to light In this variations study, it and is importanttemperature to understandespecially when the temperature we use a sensor behavior array (spread of an ISFET of the from error a that foundation is related work to temperature). alongside researchIn this study, of a robust it is important ISFET interface to understand circuit combined the temperature with an behavior improved of temperaturean ISFET from compensation a foundation technique.work alongside In view
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