Simplifying Current Sensing (Rev. A)
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Current Measurement in Power Electronic and Motor Drive Applications - a Comprehensive Study
Scholars' Mine Masters Theses Student Theses and Dissertations Fall 2007 Current measurement in power electronic and motor drive applications - a comprehensive study Asha Patel Follow this and additional works at: https://scholarsmine.mst.edu/masters_theses Part of the Electrical and Computer Engineering Commons Department: Recommended Citation Patel, Asha, "Current measurement in power electronic and motor drive applications - a comprehensive study" (2007). Masters Theses. 4581. https://scholarsmine.mst.edu/masters_theses/4581 This thesis is brought to you by Scholars' Mine, a service of the Missouri S&T Library and Learning Resources. This work is protected by U. S. Copyright Law. Unauthorized use including reproduction for redistribution requires the permission of the copyright holder. For more information, please contact [email protected]. CURRENT MEASUREMENT IN POWER ELECTRONIC AND MOTOR DRIVE APPLICATIONS – A COMPREHENSIVE STUDY by ASHABEN MEHUL PATEL A THESIS Presented to the Faculty of the Graduate School of the UNIVERSITY OF MISSOURI-ROLLA In Partial Fulfillment of the Requirements for the Degree MASTER OF SCIENCE IN ELECTRICAL ENGINEERING 2007 Approved by _______________________________ _______________________________ Dr. Mehdi Ferdowsi, Advisor Dr. Keith Corzine ____________________________ Dr. Badrul Chowdhury © 2007 ASHABEN MEHUL PATEL All Rights Reserved iii ABSTRACT Current measurement has many applications in power electronics and motor drives. Current measurement is used for control, protection, monitoring, and power management purposes. Parameters such as low cost, accuracy, high current measurement, isolation needs, broad frequency bandwidth, linearity and stability with temperature variations, high immunity to dv/dt, low realization effort, fast response time, and compatibility with integration process are required to ensure high performance of current sensors. -
Discrete Cosine Transform Based Image Fusion Techniques VPS Naidu MSDF Lab, FMCD, National Aerospace Laboratories, Bangalore, INDIA E.Mail: [email protected]
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by NAL-IR Journal of Communication, Navigation and Signal Processing (January 2012) Vol. 1, No. 1, pp. 35-45 Discrete Cosine Transform based Image Fusion Techniques VPS Naidu MSDF Lab, FMCD, National Aerospace Laboratories, Bangalore, INDIA E.mail: [email protected] Abstract: Six different types of image fusion algorithms based on 1 discrete cosine transform (DCT) were developed and their , k 1 0 performance was evaluated. Fusion performance is not good while N Where (k ) 1 and using the algorithms with block size less than 8x8 and also the block 1 2 size equivalent to the image size itself. DCTe and DCTmx based , 1 k 1 N 1 1 image fusion algorithms performed well. These algorithms are very N 1 simple and might be suitable for real time applications. 1 , k 0 Keywords: DCT, Contrast measure, Image fusion 2 N 2 (k 1 ) I. INTRODUCTION 2 , 1 k 2 N 2 1 Off late, different image fusion algorithms have been developed N 2 to merge the multiple images into a single image that contain all useful information. Pixel averaging of the source images k 1 & k 2 discrete frequency variables (n1 , n 2 ) pixel index (the images to be fused) is the simplest image fusion technique and it often produces undesirable side effects in the fused image Similarly, the 2D inverse discrete cosine transform is defined including reduced contrast. To overcome this side effects many as: researchers have developed multi resolution [1-3], multi scale [4,5] and statistical signal processing [6,7] based image fusion x(n1 , n 2 ) (k 1 ) (k 2 ) N 1 N 1 techniques. -
Temperature Compensation Circuit for ISFET Sensor
Journal of Low Power Electronics and Applications Article Temperature Compensation Circuit for ISFET Sensor Ahmed Gaddour 1,2,* , Wael Dghais 2,3, Belgacem Hamdi 2,3 and Mounir Ben Ali 3,4 1 National Engineering School of Monastir (ENIM), University of Monastir, Monastir 5000, Tunisia 2 Electronics and Microelectronics Laboratory, LR99ES30, Faculty of Sciences of Monastir, University of Monastir, Monastir 5000, Tunisia; [email protected] (W.D.); [email protected] (B.H.) 3 Higher Institute of Applied Sciences and Technology of Sousse (ISSATSo), University of Sousse, Sousse 4003, Tunisia; [email protected] 4 Nanomaterials, Microsystems for Health, Environment and Energy Laboratory, LR16CRMN01, Centre for Research on Microelectronics and Nanotechnology, Sousse 4034, Tunisia * Correspondence: [email protected]; Tel.: +216-50998008 Received: 3 November 2019; Accepted: 21 December 2019; Published: 4 January 2020 Abstract: PH measurements are widely used in agriculture, biomedical engineering, the food industry, environmental studies, etc. Several healthcare and biomedical research studies have reported that all aqueous samples have their pH tested at some point in their lifecycle for evaluation of the diagnosis of diseases or susceptibility, wound healing, cellular internalization, etc. The ion-sensitive field effect transistor (ISFET) is capable of pH measurements. Such use of the ISFET has become popular, as it allows sensing, preprocessing, and computational circuitry to be encapsulated on a single chip, enabling miniaturization and portability. However, the extracted data from the sensor have been affected by the variation of the temperature. This paper presents a new integrated circuit that can enhance the immunity of ion-sensitive field effect transistors (ISFET) against the temperature. -
Use of Hall Effect Sensors for Protection and Monitoring Applications March 2018 Use of Hall Effect Sensors for Protection and Monitoring Applications
PSRC I24 Use of Hall Effect Sensors for Protection and Monitoring Applications March 2018 Use of Hall Effect Sensors for Protection and Monitoring Applications A report to the Relaying Practices Subcommittee I Power System Relaying and Control Committee IEEE Power & Energy Society Prepared by Working Group I-24 Working Group Assignment Report on the use of Hall Effect Sensors for Protection and Monitoring Applications. The report will discuss the technology, and compare with other sensing technologies. Working Group Members Jim Niemira – Chair Jeff Long – Vice Chair Jeff Burnworth John Buffington Amir Makki Mario Ranieri George Semati Alex Stanojevic Mark Taylor Phil Zinck Page 1 of 32 PSRC I24 Use of Hall Effect Sensors for Protection and Monitoring Applications March 2018 TABLE OF CONTENTS Working Group Assignment .......................................................................................................................... 1 Working Group Members ............................................................................................................................. 1 1 Introduction .......................................................................................................................................... 5 2 Theory – What is Hall Effect .................................................................................................................. 5 3 Current Sensing Hall Effect Sensors ...................................................................................................... 6 4 Sensor Types -
Introduction to Magnetic Current Sensing.Pdf
Introduction to Magnetic Current Sensing TI Precision Labs – Magnetic Sensors Presented and prepared by Ian Williams 1 Hello, and welcome to the TI precision labs series on magnetic sensors. My name is Ian Williams, and I’m the applications manager for current sensing products. In this video, we will give an introduction to magnetic current sensing, including: a comparison of direct vs. indirect sensing, review of Ampere’s law, and overview of different magnetic current sensing technologies. 2 Direct (shunt-based) current sensing • Things to know: – Based on Ohm’s law – Shunt resistor in series with load – Invasive measurement RSHUNT adds to system load Iload – Sensing circuit not isolated from system load • Recommend when: + + Vshunt R shunt + – Currents are < 100A - • Higher currents possible with appropriate shunt resistor and Vo design techniques - – System can tolerate power loss P = I2R – Low voltage 100V or less GND – Load current not very dynamic – Isolation not required (though it can be accomplished) See: TI Precision Labs – Current Sense Amplifiers 2 Direct, or shunt-based, current sensing is based on Ohm’s law. By placing a shunt resistor in series with the system load, a voltage is generated across the shunt resistor that is proportional to the system load current. The voltage across the shunt can be measured by differential amplifiers such as current sense amplifiers (CSAs), operational amplifiers (op amps), difference amplifiers (DAs), or instrumentation amplifiers (IAs). This method is an invasive measurement of the current since the shunt resistor and sensing circuitry are electrically connected to the monitored system. Therefore, direct sensing typically is used when galvanic isolation is not required, although isolated devices are available. -
A Current Sensor Based on the Giant Magnetoresistance Effect: Design and Potential Smart Grid Applications
Sensors 2012, 12, 15520-15541; doi:10.3390/s121115520 OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors Article A Current Sensor Based on the Giant Magnetoresistance Effect: Design and Potential Smart Grid Applications Yong Ouyang 1, Jinliang He 1,*, Jun Hu 1 and Shan X. Wang 1,2 1 State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China; E-Mails: [email protected] (Y.O.Y.); [email protected] (J.H.) 2 Center for Magnetic Nanotechnology, Stanford University, 450 Serra Mall, Stanford, CA 94305, USA; E-Mail: [email protected] * Author to whom correspondence should be addressed; E-Mail: [email protected]; Tel.: +86-10-6278-8811; Fax: +86-10-6278-4709. Received: 27 September 2012; in revised form: 29 October 2012 / Accepted: 30 October 2012 / Published: 9 November 2012 Abstract: Advanced sensing and measurement techniques are key technologies to realize a smart grid. The giant magnetoresistance (GMR) effect has revolutionized the fields of data storage and magnetic measurement. In this work, a design of a GMR current sensor based on a commercial analog GMR chip for applications in a smart grid is presented and discussed. Static, dynamic and thermal properties of the sensor were characterized. The characterizations showed that in the operation range from 0 to ±5 A, the sensor had a sensitivity of 28 mV·A−1, linearity of 99.97%, maximum deviation of 2.717%, frequency response of −1.5 dB at 10 kHz current measurement, and maximum change of the amplitude response of 0.0335%·°C−1 with thermal compensation. -
High Sensitivity Differential Giant Magnetoresistance (GMR) Based Sensor for Non-Contacting DC/AC Current Measurement
Article High Sensitivity Differential Giant Magnetoresistance (GMR) Based Sensor for Non-Contacting DC/AC Current Measurement Cristian Mușuroi, Mihai Oproiu, Marius Volmer * and Ioana Firastrau 1 Department of Electrical Engineering and Applied Physics, Transilvania University of Brasov, 29 Blvd. Eroilor, 500036 Brasov, Romania; [email protected] (C.M.); [email protected] (M.O.); [email protected] (I.F.) * Correspondence: [email protected] Received: 10 December 2019; Accepted: 3 January 2020; Published: 6 January 2020 Abstract: This paper presents the design and implementation of a high sensitivity giant magnetoresistance (GMR) based current sensor with a broad range of applications. The novelty of our approach consists in using a double differential measurement system, based on commercial GMR sensors, with an adjustable biasing system used to linearize the field response of the system. The work aims to act as a fully-operational proof of concept application, with an emphasis on the mode of operation and methods to improve the sensitivity and linearity of the measurement system. The implemented system has a broad current measurement range from as low as 75 mA in DC and 150 mA in AC up to 4 A by using a single setup. The sensor system is also very low power, consuming only 6.4 mW. Due to the way the sensors are polarized and positioned above the U- shaped conductive band through which the current to be measured is flowing, the differential setup offers a sensitivity of about between 0.0272 to 0.0307 V/A (signal from sensors with no amplifications), a high immunity to external magnetic fields, low hysteresis effects of 40 mA, and a temperature drift of the offset of about −2.59×10−4 A/°C. -
Power Transformers and Reactors
GE Grid Solutions Power Transformers and Reactors Imagination at work Today’s Environment The Right Transformer Growth in the world's population and economy, will result in a for the Right Application substantial increase in energy demand over the coming years. GE offers utilities advanced solutions to improve grid stability and The International Energy Agency (IEA)1 estimates that $20 trillion increase efficiency of transmission infrastructure. will need to be invested in power and grid technologies, over the next 25 years, to keep up with demand. According to a 2015 IEA From low to ultra-high voltage; small to extra-large power report2, renewable energy will represent the largest single source ratings; standard to the most complex designs; GE has the of electricity growth over the next five years - rising to a 26 % right share of global generation. solution for every application. Integrating renewable energy sources into the grid can conflict Conventional Power Transformers with Utilities’ existing modernization and optimization plans. From 5 MVA up to 1500 MVA & 765 kV Utilities face increasing challenges of reliability, safety, power ' Small & medium power transformers quality and economics when planning substations and choosing ' Large power transformers switchgear. ' Generator step-up transformers Additionally, power systems are interconnected and highly ' Autotransformers complex networks which are susceptible to instabilities. Managing and maintaining today‘s complex grid pose many Oil-Immersed Reactors challenges, including: Up to 250 Mvar & 765 kV / 2640 Mvar ' Increasing grid efficiency and resilience without adequate ' Shunt reactors funding to invest in new capital equipment. ' Series reactors ' Expertise to manage the grid is rapidly diminishing due to the ' Earthing reactors lack of skilled, technical resources in the workplace. -
Performance Study on Commercial Magnetic Sensors Unmanned Aerial
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, VOL. 69, NO. 4, APRIL 2020 1397 Performance Study on Commercial Magnetic Sensors for Measuring Current of Unmanned Aerial Vehicles Ke Zhu , Xuyang Liu , Student Member, IEEE, and Philip W. T. Pong , Senior Member, IEEE Abstract— The industrial investment in unmanned aerial vehi- UAVs have found many applications, such as condition moni- cles (UAVs) is soaring due to their multiple autonomous applica- toring, geographical mapping, and performing certain danger- tions, such as aerial photography, rescue operations, surveillance, ous tasks, wherein the sensor technologies are indispensable and scientific data collection. Current sensing is critical for determining battery capacity in charging and discharging process for achieving these functions [3]–[7]. These sensors include and alerting for system fault during the flight. Shunt resistors accelerometers, tilt sensors, engine intake flow sensors, mag- and Hall-effect sensors are traditionally used in UAVs. Recently, netic sensors (electronic compasses), and current sensors [8]. magnetoresistive (MR) sensors are gaining enormous attention Among these sensors, current sensors play an important role from researchers. MR sensors tend to consume less power, and for a healthy operation of UAVs such as to prevent overcharg- they are smaller in size than the Hall-effect sensors. In this paper, a number of off-the-shelf MR sensors were investigated ing and safeguard against overcurrent [9], [10]. to evaluate the possibility of applying them for UAVs. Another Four physical principles are typically applied for current type of magnetic sensor (fluxgate) and shunt resistor was also sensors, namely Ohm’s law (shunt resistors), Faraday’s law studied and compared as a reference. -
A Novel MEMS Pressure Sensor with MOSFET on Chip
A Novel MEMS Pressure Sensor with MOSFET on Chip Zhao-Hua Zhang *, Yan-Hong Zhang, Li-Tian Liu, Tian-Ling Ren Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University Beijing 100084, China [email protected] Abstract—A novel MOSFET pressure sensor was proposed Figure 1. Two PMOSFET’s and two piezoresistors are based on the MOSFET stress sensitive phenomenon, in which connected to form a Wheatstone bridge. To obtain the the source-drain current changes with the stress in channel maximum sensitivity, these components are placed near the region. Two MOSFET’s and two piezoresistors were employed four sides of the silicon diaphragm, which are the high stress to form a Wheatstone bridge served as sensitive unit in the regions. The MOSFET’s has the same structure parameter novel sensor. Compared with the traditional piezoresistive W/L, same threshold voltage VT and gate-source voltage VGS pressure sensor, this MOSFET sensor’s sensitivity is improved (equal to VG-Vdd). They are designed to work in the significantly, meanwhile the power consumption can be saturation region. The piezoresistors also have the same decreased. The fabrication of the novel pressure sensor is low- resistance R . cost and compatible with standard IC process. It shows the 0 great promising application of MOSFET-bridge-circuit structure for the high performance pressure sensor. This kind of MEMS pressure sensor with signal process circuit on the same chip can be used in positive or negative Tire Pressure Monitoring System (TPMS) which is very hot in automotive electron research field. I. -
Principles of Shunt Capacitor Bank Application and Protection
Principles of Shunt Capacitor Bank Application and Protection Satish Samineni, Casper Labuschagne, and Jeff Pope Schweitzer Engineering Laboratories, Inc. Presented at the 64th Annual Georgia Tech Protective Relaying Conference Atlanta, Georgia May 5–7, 2010 Previously presented at the 63rd Annual Conference for Protective Relay Engineers, March 2010, and 9th Annual Clemson University Power Systems Conference, March 2010 Originally presented at the 36th Annual Western Protective Relay Conference, October 2009 1 Principles of Shunt Capacitor Bank Application and Protection Satish Samineni, Casper Labuschagne, and Jeff Pope, Schweitzer Engineering Laboratories, Inc. Abstract—Shunt capacitor banks (SCBs) are used in the electrical industry for power factor correction and voltage support. Over the years, the purpose of SCBs has not changed, but as new dielectric materials came to market, the fusing practices for these banks changed from externally fused to internally fused, fuseless, and finally to unfused [1]. This paper gives a brief overview of the four most common types of SCBs. What are the differences between them? Which is the best one to use? What type of protection is best suited for each bank configuration? The paper provides a quick and simple way to calculate the out-of-balance voltages (voltage protection) or current (current protection) resulting from failed capacitor units or elements. While the identification of faulty capacitor units is easy with an externally fused bank, it is more complex with the other types of fusing, making maintenance and fault investigation difficult. This paper presents a novel method to identify the faulted phase and section in capacitor banks. Fig. 1. Four most common capacitor bank configurations I. -
Integrated Switch Current Sensor for Shortcircuit Protection and Current Control of 1.7-Kv Sic MOSFET Modules
Integrated Switch Current Sensor for Shortcircuit Protection and Current Control of 1.7-kV SiC MOSFET Modules Jun Wang, Zhiyu Shen, Rolando Burgos, Dushan Boroyevich Center for Power Electronics Systems Virginia Polytechnic Institute and State Blacksburg, VA 24061, USA [email protected] Abstract—This paper presents design and implementations of a switch current sensor based on Rogowski coils. The current sensor is designed to address the issue of using desaturation circuit to protect the SiC MOSFET during shortcircuit. Specifications are given to meet the application requirement for SiC MOSFETs. It is also designed for high accuracy and high bandwidth for converter current control. PCB-based winding and shielding layout is proposed to minimize the noises caused by the high dv/dt at switching. The coil on PCB are modeled by impedance measurement, thus the bandwidth of coil is calculated. At the end, various test results are demonstrated to validate the great performance of the switch current sensor. Fig. 1. Output characteristics comparison: Si IGBT vs. SiC MOSFET Keywords—current sensing; Rogowski; SiC MOSFET; shortcircuit; current control I. INTRODUCTION SiC MOSFET, as a wide-bandgap device, has superior performance for its high breakdown electric field, low on-state resistance, fast switching speed and high working temperature [1]. High switching speed enables high switching frequency, which improves the power density of high power converters. The gradual cost reduction and packaging advancement bring a Fig. 2. Principle shortcircuit current comparison: Si IGBT vs. SiC MOSFET promising trend of replacing the conventional Si IGBTs with SiC MOSFET modules in high power applications. quickly and reaches its saturation value, where the VCE hits the Shortcircuit protection is one of the major challenges protection threshold value (“Fault detection” in the Fig.1).