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Dynamic Ph Sensor with Embedded Calibration Scheme by Advanced CMOS Finfet Technology sensors Article Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology Chien-Ping Wang 1, Ying-Chun Shen 2, Peng-Chun Liou 1, Yu-Lun Chueh 2, Yue-Der Chih 3, Jonathan Chang 3, Chrong-Jung Lin 1 and Ya-Chin King 1,* 1 Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; [email protected] (C.-P.W.); [email protected] (P.-C.L.); [email protected] (C.-J.L.) 2 Institute of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; [email protected] (Y.-C.S.); [email protected] (Y.-L.C.) 3 Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan; [email protected] (Y.-D.C.); [email protected] (J.C.) * Correspondence: [email protected]; Tel.: +886-3-5162219 or +886-3-5721804 or +1-123914307 Received: 4 March 2019; Accepted: 29 March 2019; Published: 2 April 2019 Abstract: In this work, we present a novel pH sensor using efficient laterally coupled structure enabled by Complementary Metal-Oxide Semiconductor (CMOS) Fin Field-Effect Transistor (FinFET) processes. This new sensor features adjustable sensitivity, wide sensing range, multi-pad sensing capability and compatibility to advanced CMOS technologies. With a self-balanced readout scheme and proposed corresponding circuit, the proposed sensor is found to be easily embedded into integrated circuits (ICs) and expanded into sensors array. To ensure the robustness of this new device, the transient response and noise analysis are performed. In addition, an embedded calibration operation scheme is implemented to prevent the proposed sensing device from the background offset from process variation, providing reliable and stable sensing results. Keywords: pH sensors; readout circuit scheme; calibration operation; CMOS FinFET technology 1. Introduction Providing real-time and accurate levels of ion concentration through sensing modules in smart electronic devices can be of high interest to the development of many new applications [1,2]. For instance, in personal health monitoring devices [2], detecting the pH level in the blood samples can be applied to offer real-time diagnosis of many diseases like acidosis and alkalosis [3]. In addition, it can be useful in clinical care, where real-time monitoring of changes in ion levels enables early detection of the on-set of critical conditions in patients [4]. Other than the above, in agriculture, feedback from pH detectors in Internet of Things (IoT) devices planted in soil can also be of great potential for the maintenance of optimal crop productivity across large areas of fields [5]. Therefore, ion sensors which can be embedded into smart and/or IoT devices can play an important role in medical care, agriculture as well as environmental monitoring systems over wide ranges. The development of discrete electronic ion sensors has been proposed and implemented by many different technologies [6,7]. For better compatibility to CMOS processes, field effect transistor (FET)-based solutions are considered most feasible. Ion-sensitive field effect transistor (ISFET) was the first FET-based ion sensor which was introduced by Piet Bergveld in 1970 [8]. The first ISFET was designed without a gate electrode, while the corresponding channel regions, isolated only by a thin dielectric film to the electrolyte solution, are then controlled by the electron potential generated at Sensors 2019, 19, 1585; doi:10.3390/s19071585 www.mdpi.com/journal/sensors Sensors 2019, 19, 1585 2 of 13 the coated surfaces [9]. According to the site-binding model [10], the hydrogen ions in the electrolyte solution will react with the coating layer as described by the following equations: + + MH2 MH + H , (1) − + MH M + H , (2) + − where MH2 , MH, M represent positive, neutral and negative surface sites, respectively. The chemical reaction at the coated surfaces changes the interface potential, which in turn affects the subsequent FET current level [10,11]. At equilibrium, electrolyte samples with different pH levels, namely, H+ ions reacting to the coating film, will induce a change in the surface potential, leading to a shift in channel current during a fixed read condition, responsively [11,12]. Based on fundamental electrochemistry rules, the relation between ion concentration and the interface potential can be predicted by the following equations: 2.303RT Y = E − pH, (3) 0 0 F 2.303RT DY = DpH, (4) 0 F DY 2.303RT 0 = = 59.6 (mV/pH), (5) DpH F where Y0 is the interface potential, and R and F stand for the gas and Faraday constant, respectively. As calculated from Equation (5), the maximum sensitivity will be 59.6 mV/pH, which is also known as the Nernst limit [13]. The extended-gate ion-sensitive field effect transistor (EGFET) was proposed by J. Van der Spiegel in 1983 [14]. Unlike ISFET, the ion sensing layer is coated to the extended gate, which is connected to the gate of the sensing FET through internal wiring. The electrolyte solution can then be isolated from the transistor channel region, consequently, the deposition of ion-sensitive coating can be done with much more flexibility through post CMOS processes. This not only prevents contamination concerns in the exposed gate structure, but also allows for more options which optimize the sensitivities of the coating layer [15,16]. Moreover, EGFET can be fully assembled with integrated readout circuits, therefore, the interferences from the surroundings, i.e., light, heat or other noise sources, can be effectively minimized [17]. However, the reading from both ISFET and EGFET are easily disturbed by the noise in the environment [18]. Additionally, their pH sensing ranges are fixed, determined by the material of the corresponding sensing layers [19]. Without a well-controlled gate biased, the read current level as well as sensitivity of these conventional ISFET are hard to predict and subjected strongly to process variations as well as the testing environment [20]. A novel ion detector with self-balanced readout circuit scheme which features high and flexible sensitivity, adjustable sensing range and fully COMS FinFET process compatible was proposed in our previous work [21]. In this paper, we further explore the characteristics of this device with more comprehensive discussion in its performance optimization, speed and operation limitations. 2. Device Characteristic and Experimental Section 2.1. Device Structure and Operation Principle Figure1a shows the schematic and layout of the proposed Fin Field-Effect Transistor (FinFET) process compatible ion sensor studied in this work. In addition, the 3D structure is illustrated in Figure1b. This device consists of a n-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with floating gate (FG) coupled by two input gates, sense gate (SG) and read gate (RG), respectively. Since this metal gate on top of the fin-shaped channel is floated, its potential is controlled Sensors 2019, 19, x 3 of 13 channel current of the FinFET will be affected. The capacitance model of SG and RG is shown in Figure 1c. To further demonstrate the coupling structure, the Transmission Electron Microscope (TEM) picture along AA’ cutline is shown in Figure 2a. Two slot contacts are deliberated placed close to both sides of the floating metal gate, forming two long-stripe metal-insulator-metal (MIM) lateral capacitors between the slot contacts and FG. As a result of the high aspect ratio metal gate as well as theSensors narrow 2019 , gap19, x between the contact and metal gate enabled by advanced FinFET processes, an 3area of 13 efficient laterally coupling structure can be obtained. The unit length capacitance of this lateral Sensors 2019, 19, 1585 3 of 13 structurechannel cancurrent reach of as the high FinFET as 0.134 will fF/ beμm affected. in 16 nm The FinFET capacitance processes. model With ofcontinue SG and scaling RG is inshown lateral in dimensions,Figure 1c. this coupling effect is expected to be more enhanced in future technology nodes beyond by16 the nm. amountTo further of charge demonstrate it stored the and coupling the potential structure, of two the external Transmission terminals, Electron SG andRG. Microscope The potential (TEM) of bothpictureBy input the along help gates AA’ of can thecutline becoupling capacitively is shown capacitors, in Figure coupled RG 2a. tois Two thedesigned slot common contacts to exert floating are stronger deliberated metal control gate placed (FG) on thethroughclose sensing to both a lateralcurrent,sides structure of while the SG, onfloating thewhich top metal is of connected the gate, shallow forming to trench the sense isolationtwo pad long-stripe (SP) (STI), through and metal-insulator-metal subsequently, multiple metal the and channel (MIM)via layers current lateral as ofthe thecapacitors TEM FinFET picture between will along be affected. the BB’ slot line, contacts The as capacitance shown and inFG. Figure modelAs a result 2b. of SGSG of andtransmit the RG high is the aspect shown potential ratio in Figure metalchange1c. gate detected as well in as SPthe affected narrow by gap the between ion concentration the contact of and the metalelectrolyte gate solution.enabled by advanced FinFET processes, an area efficient laterally coupling structure can be obtained. The unit length capacitance of this lateral structure can reach as high as 0.134 fF/μm in 16 nm FinFET processes. With continue scaling in lateral dimensions, this coupling effect is expected to be more enhanced in future technology nodes beyond 16 nm. By the help of the coupling capacitors, RG is designed to exert stronger control on the sensing current, while SG, which is connected to the sense pad (SP) through multiple metal and via layers as the TEM picture along BB’ line, as shown in Figure 2b. SG transmit the potential change detected in SP affected by the ion concentration of the electrolyte solution. (a) (b) (c) Figure 1.
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