DOCSLIB.ORG

United States Patent (19) 11 Patent Number: 5,413,670 Langan Et Al

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
United States Patent (19) 11 Patent Number: 5,413,670 Langan Et Al US00541367OA United States Patent (19) 11 Patent Number: 5,413,670 Langan et al. 45 Date of Patent: May 9, 1995 54 METHOD FOR PLASMA ETCHING OR con Using NF Diluted w/ Ar, Ni, and H2' Proc. 2nd CLEANING WITH DILUTED NFs Intl. Conf. on Elec. Mats, 1990 pp. 439-444. Ianno, Greenberg and Verdeyen "Comparison of the 75) Inventors: John G. Langan, Wescosville; Scott Etching & Plasma Characteristics of Discharges in CF4 E. Beck, Kutztown; Brian S. Felker, and NF3' J. Electrochem. Soc. vol. 128, No. 10, pp. Allentown, all of Pa. 274-21.79. 73) Assignee: Air Products and Chemicals, Inc., Chow, Steckl “Plasma Etching of Sputtered Mo & Allentown, Pa. MoSi2. Thin Films in NF3 Gas Mixtures' J. Appl. Phys. vol. 53, No. 8 Aug. 1982 pp. 5531-5540. 21 Appl. No.: 89,210 Donnelly, Flamm, Dautremont-Smith, Werder, "Ani sotropic Etching of SiO2 in Low-Frequency CF4/O2 22 Filed: Jul. 8, 1993 and NF3/Ar Plasma' J. Appl. Phy. 55(1) 1 Jan. 1984, 51 Int. Cl'................................................ B44C 1/22 pp. 242-252. 52 U.S. C. ..................................... 134/1.2; 134/902; Stenger & Akiki "Kinetics of Plasma Etching Silicon 156/643.1 w/ NF3', Mat. Res. Soc. Symp. Proc vol. 68 pp. 58) Field of Search ................ 156/643, 646; 134/902, 267-272. 134/1, 21 Primary Examiner-R. Bruce Breneman 56 References Cited Assistant Examiner-Joni Y. Chang U.S. PATENT DOCUMENTS Attorney, Agent, or Firm--Geoffrey L. Chase; William F. Marsh 4,412,119 10/1983 Komatsu ............................. 219/121 4,522,681 6/1985 Gorowitz. ... 156/643 57 ABSTRACT 4,654,112 3/1987 Douglas ... ... 156/643 4,711,698 12/1987 Douglas ... ... 156/643 A method has been developed for the removal of silicon 4,904,341 2/1990 Blaugher .. ... 156/643 nitride and silicon dioxide, or other semiconductor ma 4,981,551 1/1991 Palmour ... ... 156/643 terials from a surface of a wafer or CVD reactor. The 5,000,113 3/1991 Wang ........ 118/723 method uses NF3, mixed with an electropositive dilu 5,209,803 5/1993 Powell .. ... 156/345 ent, preferably argon, at a given range of concentration, 5,286,297 2/1994 Moslehi ............................... 118/723 pressure, flowrate, and power to obtain the fastest possi ble etch rates. The etch rates of the film being processed FOREIGN PATENT DOCUMENTS can be caused to increase even as the concentration of 63-11674 1/1988 Japan. NF3 in the diluent is decreased by choosing the proper 1194423 11/1989 Japan. diluent and operating conditions. Not only does this method increase the etch rate, thereby increasing the OTHER PUBLICATIONS throughput of the reactor using this process, it also Barkanic, Hoff, Stach, Golja, "Dry Etching Using accomplishes this task at low concentrations of NF3 NF3/Ar and NF3/He Plasma’ Special Technical Test resulting in a lower cost. ing Publication 850, 1984, pp. 110-123. Tan, Goh, Naseem & Brown, “Plasma Etching of Sili 8 Claims, 4 Drawing Sheets Si3N4 Etching SOOO -o- CF4f02 14000 -o- C2F6/02 12OOO -- 25% NF3 in Ar -- 0% NF3 in Ar 10000 -- 7.8% NF3 in Air BOOO -- 37.8% NF3 in Ar -0- 60% NF3 in Air Ha - 75% NF3 in Ar 2000 -0 - 90% NF3 in Ar O 5OO 1OOO 1500 2OOO Pressure (morr) Si3N4 etch rates obtained at 60W RF power, 50sccm total gas flowrate. U.S. Patent May 9, 1995 Sheet 1 of 4 5,413,670 RF Power Supply and Matching Network Molecular Drag Vacuum Pump Figure 1. Schematic of the plasma etching reactor. U.S. Patent May 9, 1995 Sheet 2 of 4 5,413,670 NF3IAir Etching of SiO2 800 1400 1200 -O- 10% N3 1000 -- 7.8% NF3 800 -- 25% NF3 600 -a - 37.6% NF3 L 400 -o- 50% NF3 200 O O 500 1000 500 2000 Pressure (norr Figure 2. SiO2 etch rates obtained at 60W (l.4W/cm2), 50 scam total gas flowrate U.S. Patent May 9, 1995 Sheet 3 of 4 5,413,670 Si3N4 Etching 16000 -o- CF4 fo2 14000 -o- C2F6fo2 2000 -- 25% NF3 in Ar OOOO --d- 10% NF3 in Ar 8000 -- 17.8% NF3 in Ar 8OOO A. -- 37.6% NF3 in Air s t -0- 50% NF3 in Air 4000 O - -a - 75% NF3 in Ar 2000 -o- 90% NF3 in Air O O 5OO OOO 1600 2000 Pressure (Torr) Figure 3. Si3N4 etch rates obtained at 60W RF power, 50s.ccm total gas flowrate. 5,413,670 1. 2 linear function of inlet gas flow (from 4 to 24 sccm) with METHOD FOR PLASMA ETCHING OR power densities of 0.082, 0.123, 0.163, and 0.204W/cm2. CLEANING WITH DILUTEDNFs “As silicon loading is decreased, loss of fluorine atoms in non-etching reactions will become significant relative TECHNICAL FIELD to those consumed in the etching reaction.' The present invention is directed to the field of etch J. Barkanic, A. Hoff, J. Stach, and B. Golja, "Dry cleaning or removal of semiconductor material, such as Etching Using NF3/Ar and NF3/He Plasmas,” Semi films, on deposition equipment or electronic materials conductor Processing, ASTM STP 850, (1984) pp. substrates using a plasma of low concentration nitrogen 110-123, include research in which experiments were trifluoride in a diluent that is more electropositive than 10 performed in a Plasma Therm PK 2440 Dual Plasma/- nitrogen trifluoride, such as argon. Reactive Ion Etch System with 22 in Dia. electrodes The present invention is particularly appropriate to and electrode spacing of 2.6 inches. Helium and argon the removal of silicon dioxide and silicon nitride at were used as diluents with the NF3 being varied from higher etch rates than previously experienced at lower 10% to 80% of the total flow (by volume). For plasma nitrogen trifluoride concentrations than previously uti 15 etching (PE) experiments a fixed flow of 40 sccm was lized. used and pressure ranged from 60 to 500 microns. For RIE the flow was varied from 10 to 40 scom and the BACKGROUND OF THE PRIOR ART pressure ranged from 15 to 80 microns. Power densities Etching and cleaning of SiO2, tungsten, polysilicon ranged from 0.02 to 0.8 W/cm2. "At low NF3 concen and Si3N4 materials are technologically significant pro 20 trations (<40% NF3/inert) the etch rate in either an Air cesses for microelectronics device fabrication. Faster or He mixture is not significantly different. In addition, etch rates are required to increase the throughput of the the etch rate for low percent NF3 mixtures (10 to 20% process, thus decreasing the total cost. NF3/inert) doesn't vary markedly with power density. In most etching processes, diluting the fluorine This indicates that the NF3 concentration in low per source gas, CF4, C2F6, etc. results in a decrease in SiO2 25 centage NF3 mixtures is low enough such that it doesn't or Si3N4etch rates. The NF3 literature reports the same result in more NF3 being dissociated as power density is result, diluting the NF3 results in lower etch rates. increased.' SiO2 etch rates varied from 30 to 1500 Various attempts have been made to use nitrogen A/min depending upon the mode selected. Loading of trifluoride efficiently in the prior art. the chamber was also noted to have an effect on etch U.S. Pat. No. 4,711,698 describes a plasma etching 30 process for thermally grown or CVD deposited silicon rate with the rate decreasing with increasing number of oxide. This work describes selective etching of silicon wafers. oxide to silicon and refractory metals and their silicides. V.M. Donnelly, D. L. Flamm, W. C. Dautremont The preferred embodiment uses a gas mixture of Smith, and D. J. Werder, "Anisotropic Etching of SiO2 BF3/H2/Ar with the claim that the BF3 gas can be 35 in Low-Frequency CF4/O2 and NF3/Ar Plasmas,” J. replaced by one of the following: NF3, SF6, or SiF4 Appl. Phys., vol. 55, no. 1, (Jan. 1984), pp. 242-252, Hydrogen is supplied to the reactor in a carrier gas of describe a protocol in which during all experiments gas argon in the concentration of 3% hydrogen to 97% pressure was 0.35 Torr and total flow rate was 100 argon. Total flow rates are calculated from the flow sccm. Additionally, three types of electrodes were used: rate of the fluorinated gas (BF3, etc.) and the hydrogen (1) hard anodized aluminum; (2) Stainless steel; and (3) flow rate, with the inert gas component disregarded. silicon covered stainless steel lower electrodes. The inventor claims the percentage in the etchant gas "NF3/Arplasmas generated much higher fluorine atom mixture of all atomic species which form in the glow concentrations than CF4/O2 plasmas . The fluorine discharge molecules and radicals capable of adsorbing atom density is ~ 10 times higher than in CF4/50% O2 onto and reducing silicon oxides in the range of 5% 45 under the same conditions (empty stainless-steel reac atomic to 50% atomic of the etchant gas mixture. The tor, power = 0.35 W/cm2, flow rate = 100 sccm, and pressure range claimed is 100 mTorr to 3 Torr. Also pressure =0.35 Torr).” When the lower electrode was claimed is the atomic ratio of fluorine to hydrogen in covered with silicon the fluorine atom concentration in the etchant gas mixture in the range of 15:1 to 30:1. the NF3 plasma dropped by a factor of ~6. Their results Japanese Unexamined Patent Application 63-1674 is 50 of etch rate vs. fluorine atom concentration suggest that an improved cleaning method for plasma CVD cham the same processes are operative in both CF4/O2 and bers utilizing mixtures of argon and NF3.
Load more

Recommended publications
  • Reactions of Lithium Nitride with Some Unsaturated Organic Compounds. Perry S
    Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 1963 Reactions of Lithium Nitride With Some Unsaturated Organic Compounds. Perry S. Mason Jr Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Mason, Perry S. Jr, "Reactions of Lithium Nitride With Some Unsaturated Organic Compounds." (1963). LSU Historical Dissertations and Theses. 898. https://digitalcommons.lsu.edu/gradschool_disstheses/898 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. This dissertation has been 64—5058 microfilmed exactly as received MASON, Jr., Perry S., 1938- REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS. Louisiana State University, Ph.D., 1963 Chemistry, organic University Microfilms, Inc., Ann Arbor, Michigan Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS A Dissertation Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requireiaents for the degree of Doctor of Philosophy in The Department of Chemistry by Perry S. Mason, Jr. B. S., Harding College, 1959 August, 1963 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission.
    [Show full text]
  • High-Quality, Low-Cost Bulk Gallium Nitride Substrates
    ADVANCED MANUFACTURING OFFICE High-Quality, Low- Cost Bulk Gallium Nitride Substrates Electrochemical Solution Growth: A Scalable Semiconductor Manufacturing Process The ever-growing demand in the past decade for more energy efficient solid-state lighting and electrical power conversion is leading to a higher demand for wide bandgap semiconductor-based devices, such as gallium nitride (GaN), over traditional silicon (Si)-based devices. High cost and limited availability, how- ever, have hindered the adoption of GaN substrates to date. When utilizing GaN, current LED and power electronic device applications employ GaN epitaxially grown on top of non-GaN substrates. The lattice mismatch between the epitaxial GaN layer and the non-native substrate surface leads to con- siderable stress and high defect densities, ultimately compromising device yield and Conceptual diagram of the ESG reactor. Photo courtesy of Sandia National Laboratories performance. While bulk growth of GaN can combat these issues, current growth methods for bulk GaN have not fostered widespread adoption to date due to lim- This project will help develop ESG into a viable GaN bulk growth process that is well ited scalability, low material quality, high suited for scalability to large-area wafer manufacturing. Bulk GaN is important to bol- operating temperatures and pressures, stering U.S. competitiveness in high-efficiency power electronics and solid-state lighting. and slow growth rates. A fundamentally different manufacturing route for bulk Benefits for Our Industry and Our Nation growth of GaN not driven by thermal pro- Scaling the ESG growth method to large area GaN crystals could reduce the production cesses is needed to provide an adequate cost of bulk GaN wafers by up to a factor of 10.
    [Show full text]
  • Naming Compounds Practice Problems KEY Naming Simple Ionic Compounds
    Chemistry HS/Science Unit: 05 Lesson: 01 Naming Compounds Practice Problems KEY Naming Simple Ionic Compounds Name the following compounds: 1) KCl potassium chloride 2) MgI2 magnesium iodide 3) FeO iron (II) oxide 4) Fe2O3 iron (III) oxide 5) Cu3P copper (I) phosphide 6) SnSe2 tin (IV) selenide 7) TiBr3 titanium (III) bromide 8) GaAs gallium arsenide 9) BeF2 beryllium fluoride 10) Cs3N cesium nitride Write the formulas for the following compounds: 1) lithium iodide LiI 2) cobalt (III) oxide Co2O3 3) calcium fluoride CaF2 4) silver bromide AgBr 5) sodium hydride NaH 6) vanadium (V) sulfide V2S5 7) lead (II) nitride Pb3N2 8) titanium (II) selenide TiSe 9) manganese (VII) arsenide Mn3As7 10) gallium chloride GaCl3 ©2013, TESCCC 06/17/13 page 1 of 4 Chemistry HS/Science Unit: 05 Lesson: 01 Naming Compounds Practice Problems Naming Complex (polyatomic) Ionic Compounds Name the following compounds: 1) NH4Cl ammonium chloride 2) Fe(NO3)3 iron (III) nitrate 3) Pb(SO4)2 lead (IV) sulfate 4) Ag3PO4 silver phosphate 5) Be(HCO3)2 beryllium hydrogen carbonate 6) Al(CN)3 aluminum cyanide 7) Mn2(SO3)3 manganese (III) sulfite 8) Sr(C2H3O2)2 strontium acetate 9) Ti(CN)4 titanium (IV) cyanide 10) YClO3 yttrium chlorate Write the formulas for the following compounds: 1) lead (IV) sulfate Pb(SO4)2 2) silver cyanide AgCN 3) copper (II) chlorate Cu(ClO3)2 4) chromium (IV) phosphate Cr3(PO4)4 5) vanadium (IV) carbonate V(CO3)2 6) ammonium oxide (NH4)2O 7) tin (II) nitrite Sn(NO2)2 8) chromium (III) hydroxide Cr(OH)3 9) titanium (II) acetate Ti(C2H3O2)2 10)
    [Show full text]
  • Boron-Nitride-Datasheet-V1
    A Unique Proposition for Industry The introduction of boron nitride into our stable of 2D materials widens the focus of delivering innovative solutions for industry Neill Ricketts, CEO Our latest 2D success story Hexotene is a few-layer hexagonal boron nitride (h-BN) nanoplatelet powder with large lateral dimensions. With high chemical purity and mono-layer particles confirmed, Hexotene is the latest addition to our high performance 2D product range. It’s unique characteristics, specifically with regards to electrical conductivity, show some markedly different properties when compared to graphene. This is particularly promising for combined projects using both graphene and boron nitride. Example BN Nano platelets Information Property Measurement Method Boron 42 è 2.0At.% Predominantly few-layer with some Raman Nitrogen 45 è 2.0At.% Layers mono-layer and bi-layer spectroscopy Oxygen 3.0 è 1.0At.% Lateral Carbon 8.0 è 2.0At.% up to 5.0 µm SEM dimensions Method XPS IR UV Wavelenght (nm) 4096 1024 256 Band Gap ~6eV Energy BORON NITRIDE GRAPHENE Graphene Metals Semi- Plastics Boron Conductor Nitride 0.125 0.25 0.50 1.00 2.00 4.00 8.00 Conductors Semi-Conductors Insulators Energy (eV) Diagram showing extremes of electrical conductivity, with Hexagonal boron nitride is white in colour and is unusual as boron nitride having an ultra-wide bandgap. it absorbs high energy UV light, whereas graphene absorbs all light frequencies. What is h-BN? Boron and nitrogen are neighbours of carbon in boron nitride (h-BN). It also happens to be the the Periodic Table. Just as carbon can exist as softest of the BN polymorphs.
    [Show full text]
  • Techniques of Preparation and Crystal Chemistry of Transuranic Chalcogenides and Pnictides D
    Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides D. Damien, R. Haire, J. Peterson To cite this version: D. Damien, R. Haire, J. Peterson. Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides. Journal de Physique Colloques, 1979, 40 (C4), pp.C4-95-C4-100. 10.1051/jphyscol:1979430. jpa-00218826 HAL Id: jpa-00218826 https://hal.archives-ouvertes.fr/jpa-00218826 Submitted on 1 Jan 1979 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE Colloque C4, supplément au n° 4, Tome 40, avril 1979, page C4-95 Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides (*) D. A. Damien (**), R. G. Haire and J. R. Peterson (t) Transuranium Research Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37830, U.S.A. Résumé. — La cristallochimie d'un certain nombre de chalcogénures et pnictures d'éléments transuraniens a été étudiée en utilisant les isotopes Am, Cm, Bk et Cf. Les composés ont été préparés par réaction directe du métal avec l'élément chalcogène ou pnictogène à température élevée. Les chalcogénures supérieurs ont été dissociés thermiquement pour donner des composés à stœchiométrie plus basse dont les sesquichalco- génures constituent la limite.
    [Show full text]
  • Carbides and Nitrides of Zirconium and Hafnium
    materials Review Carbides and Nitrides of Zirconium and Hafnium Sergey V. Ushakov 1,* , Alexandra Navrotsky 1,* , Qi-Jun Hong 2,* and Axel van de Walle 2,* 1 Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California at Davis, Davis, CA 95616, USA 2 School of Engineering, Brown University, Providence, RI 02912, USA * Correspondence: [email protected] (S.V.U.); [email protected] (A.N.); [email protected] (Q.-J.H.); [email protected] (A.v.d.W.) Received: 6 August 2019; Accepted: 22 August 2019; Published: 26 August 2019 Abstract: Among transition metal carbides and nitrides, zirconium, and hafnium compounds are the most stable and have the highest melting temperatures. Here we review published data on phases and phase equilibria in Hf-Zr-C-N-O system, from experiment and ab initio computations with focus on rocksalt Zr and Hf carbides and nitrides, their solid solutions and oxygen solubility limits. The systematic experimental studies on phase equilibria and thermodynamics were performed mainly 40–60 years ago, mostly for binary systems of Zr and Hf with C and N. Since then, synthesis of several oxynitrides was reported in the fluorite-derivative type of structures, of orthorhombic and cubic higher nitrides Zr3N4 and Hf3N4. An ever-increasing stream of data is provided by ab initio computations, and one of the testable predictions is that the rocksalt HfC0.75N0.22 phase would have the highest known melting temperature. Experimental data on melting temperatures of hafnium carbonitrides are absent, but minimum in heat capacity and maximum in hardness were reported for Hf(C,N) solid solutions.
    [Show full text]
  • Silicon Nitride, a Close to Ideal Ceramic Material for Medical Application
    ceramics Review Silicon Nitride, a Close to Ideal Ceramic Material for Medical Application Robert B. Heimann Am Stadtpark 2A, D-02826 Görlitz, Germany; [email protected]; Tel.: +49-3581-667851 Abstract: This topical review describes the salient results of recent research on silicon nitride, a ceramic material with unique properties. The outcome of this ongoing research strongly encourages the use of monolithic silicon nitride and coatings as contemporary and future biomaterial for a variety of medical applications. Crystallographic structure, the synthesis and processing of monolithic structures and coatings, as well as examples of their medical applications that relate to spinal, orthopedic and dental implants, bone grafts and scaffolds, platforms for intelligent synthetic neural circuits, antibacterial and antiviral particles and coatings, optical biosensors, and nano-photonic waveguides for sophisticated medical diagnostic devices are all covered in the research reviewed herein. The examples provided convincingly show that silicon nitride is destined to become a leader to replace titanium and other entrenched biomaterials in many fields of medicine. Keywords: silicon nitride; structure; properties; processing; coatings; spinal implants; arthroplastic implants; bone scaffolds; dental implants; neural circuits; biosensors; medical diagnostics Citation: Heimann, R.B. Silicon 1. Introduction Nitride, a Close to Ideal Ceramic Material for Medical Application. Today, the research and development of metallic, ceramic, polymeric and composite Ceramics 2021, 4, 208–223. biomaterials have progressed to a high level of involvement and sophistication. This is https://doi.org/10.3390/ related to the fact that an ever-increasing part of the world population is in need of the repair ceramics4020016 or replacement of dysfunctional or damaged parts of the body, such as dental roots and teeth, alveolar ridge augmentation, intraocular lenses, heart pacemakers, cochlear implants, Academic Editors: Stuart Hampshire and hip and knee endoprostheses [1].
    [Show full text]
  • United States Patent (19) 11 Patent Number: 4,834,817 Zeuner Et Al
    United States Patent (19) 11 Patent Number: 4,834,817 Zeuner et al. (45) Date of Patent: May 30, 1989 (54). GAS-GENERATING COMPOSITION 56 References Cited (75 Inventors: Siegfried Zeuner, Munich; Walter U.S. PATENT DOCUMENTS Holzinger, Deisenhofen, both of Fed. 3,931,040 l/1976 Breazeale .............................. 149/35 Rep. of Germany 4,376,002 3/1983 Utracki ... ... 149/35 4,386,979 6/1983 Jackson ................................. 149/35 73) Assignee: Bayern-Chemie Gesellschaft Fir Primary Examiner-Stephen J. Lechert Jr. flugchemische Antriebe mit Attorney, Agent, or Firm-Toren, McGeady & Beschrinkter Haftung Associates (21) Appl. No.: 252,519 (57) ABSTRACT Sep. 30, 1988 A nitrogen-generating composition useful for inflating 22 Filed: air bags as protection for occupants of motor vehicles is (30) Foreign Application Priority Data disclosed which is composed of an alkali and alkaline earth metal azide, an oxidizing agent which is an alkali Oct. 1, 1987 DE Fed. Rep. of Germany ....... 3733176 or alkaline earth metal salt and an nitride, and optionally 51 Int. Cl." .............................................. C06B 35/00 silicon dioxide. The nitride or combination of nitride (52) U.S. Cl. ........................................ 149/35; 149/61; and silicon dioxide are present in an amount effective to 149/76; 280/741 bind all of the alkali and alkaline earth metal as slag. 58) Field of Search ............................. 149/35, 61, 76; 280/741 7 Claims, No Drawings 4,834,817 1. 2 years, the chemical stability of this composition leaves GAS-GENERATING COMPOSITION much to be desired. According to German Offenlegungsschrift No. FIELD OF INVENTION 2,407,659, a composition containing silicon nitride, so This invention concerns a gas-generating composi 5 dium azide and ammonium perchlorate generates gas by tion useful for inflating air bags for protection of occu reacting according to the following equation: pants of motor vehicles.
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • 3 Families of Elements
    Name Class Date CHAPTER 5 The Periodic Table SECTION 3 Families of Elements KEY IDEAS As you read this section, keep these questions in mind: • What makes up a family of elements? • What properties do the elements in a group share? • Why does carbon form so many compounds? What Are Element Families? Recall that all elements can be classified into three READING TOOLBOX categories: metals, nonmetals, and semiconductors. Organize As you read Scientists classify the elements further into five families. this section, create a chart The atoms of all elements in most families have the same comparing the different number of valence electrons. Thus, members of a family families of elements. Include examples of each family in the periodic table share some properties. and describe the common properties of elements in the Group number Number of valence Name of family family. electrons Group 1 1 Alkali metals Group 2 2 Alkaline-earth metals READING CHECK Groups 3–12 varied Transition metals 1. Identify In general, what Group 17 7 Halogens do all elements in the same family have in common? Group 18 8 (except helium, Noble gases which has 2) What Are the Families of Metals? Many elements are classified as metals. Recall that metals can conduct heat and electricity. Most metals can be stretched and shaped into flat sheets or pulled into wires. Families of metals include the alkali metals, the alkaline-earth metals, and the transition metals. THE ALKALI METALS READING CHECK The elements in Group 1 form a family called the 2. Explain Why are alkali alkali metals.
    [Show full text]
  • The Elements.Pdf
    A Periodic Table of the Elements at Los Alamos National Laboratory Los Alamos National Laboratory's Chemistry Division Presents Periodic Table of the Elements A Resource for Elementary, Middle School, and High School Students Click an element for more information: Group** Period 1 18 IA VIIIA 1A 8A 1 2 13 14 15 16 17 2 1 H IIA IIIA IVA VA VIAVIIA He 1.008 2A 3A 4A 5A 6A 7A 4.003 3 4 5 6 7 8 9 10 2 Li Be B C N O F Ne 6.941 9.012 10.81 12.01 14.01 16.00 19.00 20.18 11 12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 3 Na Mg IIIB IVB VB VIB VIIB ------- VIII IB IIB Al Si P S Cl Ar 22.99 24.31 3B 4B 5B 6B 7B ------- 1B 2B 26.98 28.09 30.97 32.07 35.45 39.95 ------- 8 ------- 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 4 K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr 39.10 40.08 44.96 47.88 50.94 52.00 54.94 55.85 58.47 58.69 63.55 65.39 69.72 72.59 74.92 78.96 79.90 83.80 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 5 Rb Sr Y Zr NbMo Tc Ru Rh PdAgCd In Sn Sb Te I Xe 85.47 87.62 88.91 91.22 92.91 95.94 (98) 101.1 102.9 106.4 107.9 112.4 114.8 118.7 121.8 127.6 126.9 131.3 55 56 57 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 6 Cs Ba La* Hf Ta W Re Os Ir Pt AuHg Tl Pb Bi Po At Rn 132.9 137.3 138.9 178.5 180.9 183.9 186.2 190.2 190.2 195.1 197.0 200.5 204.4 207.2 209.0 (210) (210) (222) 87 88 89 104 105 106 107 108 109 110 111 112 114 116 118 7 Fr Ra Ac~RfDb Sg Bh Hs Mt --- --- --- --- --- --- (223) (226) (227) (257) (260) (263) (262) (265) (266) () () () () () () http://pearl1.lanl.gov/periodic/ (1 of 3) [5/17/2001 4:06:20 PM] A Periodic Table of the Elements at Los Alamos National Laboratory 58 59 60 61 62 63 64 65 66 67 68 69 70 71 Lanthanide Series* Ce Pr NdPmSm Eu Gd TbDyHo Er TmYbLu 140.1 140.9 144.2 (147) 150.4 152.0 157.3 158.9 162.5 164.9 167.3 168.9 173.0 175.0 90 91 92 93 94 95 96 97 98 99 100 101 102 103 Actinide Series~ Th Pa U Np Pu AmCmBk Cf Es FmMdNo Lr 232.0 (231) (238) (237) (242) (243) (247) (247) (249) (254) (253) (256) (254) (257) ** Groups are noted by 3 notation conventions.
    [Show full text]
  • Ultrahigh Thermal Conductivity in Isotope-Enriched Cubic Boron Nitride
    Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Chen, Ke et al. "Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride." Science 367, 6477 (January 2020): 555-559 © 2020 The Authors As Published http://dx.doi.org/10.1126/science.aaz6149 Publisher American Association for the Advancement of Science (AAAS) Version Author's final manuscript Citable link https://hdl.handle.net/1721.1/127819 Terms of Use Creative Commons Attribution-Noncommercial-Share Alike Detailed Terms http://creativecommons.org/licenses/by-nc-sa/4.0/ Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride Ke Chen1*, Bai Song1*†‡,, Navaneetha K. Ravichandran2*, Qiye Zheng3§, Xi Chen4#, Hwijong Lee4, Haoran Sun5, Sheng Li6, Geethal Amila Gamage5, Fei Tian5, Zhiwei Ding1, Qichen Song1, Akash Rai3, Hanlin Wu6, Pawan Koirala6, Aaron J. Schmidt1, Kenji Watanabe7, Bing Lv6, Zhifeng Ren5, Li Shi4,8, David G. Cahill3, Takashi Taniguchi7, David Broido2†, and Gang Chen1† 1Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. 2Department of Physics, Boston College, Chestnut Hill, MA 02467, USA. 3Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA. 4Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA 5Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA. 6Department of Physics, The University of Texas at Dallas, Richardson, TX 75080, USA. 7National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
    [Show full text]