One-Dimensional Pnictogen Allotropes Inside Single- Wall Carbon Nanotubes
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Black Phosphorus As a New Lubricant
Friction 6(1): 116–142 (2018) ISSN 2223-7690 https://doi.org/10.1007/s40544-018-0204-z CN 10-1237/TH RESEARCH ARTICLE Black phosphorus as a new lubricant Wei WANG, Guoxin XIE*, Jianbin LUO* State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China Received: 20 June 2017 / Revised: 18 October 2017 / Accepted: 07 December 2017 © The author(s) 2018. This article is published with open access at Springerlink.com Abstract: In recent years, a new 2D-layered material—black phosphorus (BP)—has been a rising star after the era of graphene owing to its high charge carrier mobility, tunable direct bandgap and unique in-plane anisotropic structure. With the development of the synthesis and modification methods of BP, its extensive applications, e.g., transistors, batteries and optoelectronics have emerged. In order to explore its full potential, research into the tribological properties of BP 2D-layered materials such as lubrication additives and fillers in self-lubricating composite materials would be not only of high scientific value but also of practical significance. In this work, recent advances on the friction and lubrication properties of BP nanosheets made by our group, including the micro-friction properties, the lubrication properties of BP nanosheets as water-based and oil-based lubrication additives, and the friction and wear of BP/PVDF composites will be presented. Finally, the future challenges and opportunities in the use of BP materials as lubricants will be discussed. Keywords: black phosphorus; two-dimensional (2D) material; lubricant additive; self-lubricating composite materials; friction 1 Introduction certain period owing to the finite lubricant thickness, and it can be easily affected by the environment. -
Reactions of Lithium Nitride with Some Unsaturated Organic Compounds. Perry S
Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 1963 Reactions of Lithium Nitride With Some Unsaturated Organic Compounds. Perry S. Mason Jr Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Mason, Perry S. Jr, "Reactions of Lithium Nitride With Some Unsaturated Organic Compounds." (1963). LSU Historical Dissertations and Theses. 898. https://digitalcommons.lsu.edu/gradschool_disstheses/898 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. This dissertation has been 64—5058 microfilmed exactly as received MASON, Jr., Perry S., 1938- REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS. Louisiana State University, Ph.D., 1963 Chemistry, organic University Microfilms, Inc., Ann Arbor, Michigan Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS A Dissertation Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requireiaents for the degree of Doctor of Philosophy in The Department of Chemistry by Perry S. Mason, Jr. B. S., Harding College, 1959 August, 1963 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. -
High-Quality, Low-Cost Bulk Gallium Nitride Substrates
ADVANCED MANUFACTURING OFFICE High-Quality, Low- Cost Bulk Gallium Nitride Substrates Electrochemical Solution Growth: A Scalable Semiconductor Manufacturing Process The ever-growing demand in the past decade for more energy efficient solid-state lighting and electrical power conversion is leading to a higher demand for wide bandgap semiconductor-based devices, such as gallium nitride (GaN), over traditional silicon (Si)-based devices. High cost and limited availability, how- ever, have hindered the adoption of GaN substrates to date. When utilizing GaN, current LED and power electronic device applications employ GaN epitaxially grown on top of non-GaN substrates. The lattice mismatch between the epitaxial GaN layer and the non-native substrate surface leads to con- siderable stress and high defect densities, ultimately compromising device yield and Conceptual diagram of the ESG reactor. Photo courtesy of Sandia National Laboratories performance. While bulk growth of GaN can combat these issues, current growth methods for bulk GaN have not fostered widespread adoption to date due to lim- This project will help develop ESG into a viable GaN bulk growth process that is well ited scalability, low material quality, high suited for scalability to large-area wafer manufacturing. Bulk GaN is important to bol- operating temperatures and pressures, stering U.S. competitiveness in high-efficiency power electronics and solid-state lighting. and slow growth rates. A fundamentally different manufacturing route for bulk Benefits for Our Industry and Our Nation growth of GaN not driven by thermal pro- Scaling the ESG growth method to large area GaN crystals could reduce the production cesses is needed to provide an adequate cost of bulk GaN wafers by up to a factor of 10. -
Which Pnictogen Is Best?† Cite This: New J
NJC PAPER Pnictogen bonding with alkoxide cages: which pnictogen is best?† Cite this: New J. Chem., 2019, 43,14305 Henry J. Trubenstein, ‡ Shiva Moaven, ‡ Maythe Vega, Daniel K. Unruh and Anthony F. Cozzolino * Pnictogen bonding is beginning to emerge as a useful supramolecular interaction. The design strategies for these systems are still in the early stages of development and much attention has been focused on the lighter pnictogens. Pnictogen bond donors can have up to three independent sites for binding which can result in triple pnictogen bonding. This has been observed in the self-assembly of antimony alkoxide cages, but not with the lighter congeners. This work reports structural characterization of an analogous arsenic alkoxide cage that engages in a single pnictogen bond and synthetic explorations of Received 14th July 2019, the bismuth congener. DFT calculations are used to evaluate the differences between the structures. Accepted 13th August 2019 Ultimately the partial charge on the pnictogen and the energy of the pnictogen lone pair dictate the DOI: 10.1039/c9nj03648b strength, orientation and number of pnictogen bonds that these cages form. Antimony cages strike the best balance between strength and directionality, allowing them to achieve triple pnictogen bonding rsc.li/njc where the other congeners do not. Introduction or bismuth.15–23 Recently, antimony centred PnBs have been purposefully designed into molecules to actively direct the self- A pnictogen bond (PnB), in analogy to a halogen or chalcogen assembly of reversed bilayer vesicles,24 enable anion binding bond (XB/HaB or ChB), is ‘‘the net attractive interaction between with applications in sensing and transport,25–28 self-assembly an electrophilic region associated with a [pnictogen] atom in a complex architectures through triple pnictogen bonding29 and molecular entity [the PnB donor] and a nucleophilic region in allow for supramolecular catalysis.30 These applications rely on another, or the same, molecular entity [the PnB acceptor].’’1 the predictable formation of PnBs. -
Of the Periodic Table
of the Periodic Table teacher notes Give your students a visual introduction to the families of the periodic table! This product includes eight mini- posters, one for each of the element families on the main group of the periodic table: Alkali Metals, Alkaline Earth Metals, Boron/Aluminum Group (Icosagens), Carbon Group (Crystallogens), Nitrogen Group (Pnictogens), Oxygen Group (Chalcogens), Halogens, and Noble Gases. The mini-posters give overview information about the family as well as a visual of where on the periodic table the family is located and a diagram of an atom of that family highlighting the number of valence electrons. Also included is the student packet, which is broken into the eight families and asks for specific information that students will find on the mini-posters. The students are also directed to color each family with a specific color on the blank graphic organizer at the end of their packet and they go to the fantastic interactive table at www.periodictable.com to learn even more about the elements in each family. Furthermore, there is a section for students to conduct their own research on the element of hydrogen, which does not belong to a family. When I use this activity, I print two of each mini-poster in color (pages 8 through 15 of this file), laminate them, and lay them on a big table. I have students work in partners to read about each family, one at a time, and complete that section of the student packet (pages 16 through 21 of this file). When they finish, they bring the mini-poster back to the table for another group to use. -
Naming Compounds Practice Problems KEY Naming Simple Ionic Compounds
Chemistry HS/Science Unit: 05 Lesson: 01 Naming Compounds Practice Problems KEY Naming Simple Ionic Compounds Name the following compounds: 1) KCl potassium chloride 2) MgI2 magnesium iodide 3) FeO iron (II) oxide 4) Fe2O3 iron (III) oxide 5) Cu3P copper (I) phosphide 6) SnSe2 tin (IV) selenide 7) TiBr3 titanium (III) bromide 8) GaAs gallium arsenide 9) BeF2 beryllium fluoride 10) Cs3N cesium nitride Write the formulas for the following compounds: 1) lithium iodide LiI 2) cobalt (III) oxide Co2O3 3) calcium fluoride CaF2 4) silver bromide AgBr 5) sodium hydride NaH 6) vanadium (V) sulfide V2S5 7) lead (II) nitride Pb3N2 8) titanium (II) selenide TiSe 9) manganese (VII) arsenide Mn3As7 10) gallium chloride GaCl3 ©2013, TESCCC 06/17/13 page 1 of 4 Chemistry HS/Science Unit: 05 Lesson: 01 Naming Compounds Practice Problems Naming Complex (polyatomic) Ionic Compounds Name the following compounds: 1) NH4Cl ammonium chloride 2) Fe(NO3)3 iron (III) nitrate 3) Pb(SO4)2 lead (IV) sulfate 4) Ag3PO4 silver phosphate 5) Be(HCO3)2 beryllium hydrogen carbonate 6) Al(CN)3 aluminum cyanide 7) Mn2(SO3)3 manganese (III) sulfite 8) Sr(C2H3O2)2 strontium acetate 9) Ti(CN)4 titanium (IV) cyanide 10) YClO3 yttrium chlorate Write the formulas for the following compounds: 1) lead (IV) sulfate Pb(SO4)2 2) silver cyanide AgCN 3) copper (II) chlorate Cu(ClO3)2 4) chromium (IV) phosphate Cr3(PO4)4 5) vanadium (IV) carbonate V(CO3)2 6) ammonium oxide (NH4)2O 7) tin (II) nitrite Sn(NO2)2 8) chromium (III) hydroxide Cr(OH)3 9) titanium (II) acetate Ti(C2H3O2)2 10) -
Boron-Nitride-Datasheet-V1
A Unique Proposition for Industry The introduction of boron nitride into our stable of 2D materials widens the focus of delivering innovative solutions for industry Neill Ricketts, CEO Our latest 2D success story Hexotene is a few-layer hexagonal boron nitride (h-BN) nanoplatelet powder with large lateral dimensions. With high chemical purity and mono-layer particles confirmed, Hexotene is the latest addition to our high performance 2D product range. It’s unique characteristics, specifically with regards to electrical conductivity, show some markedly different properties when compared to graphene. This is particularly promising for combined projects using both graphene and boron nitride. Example BN Nano platelets Information Property Measurement Method Boron 42 è 2.0At.% Predominantly few-layer with some Raman Nitrogen 45 è 2.0At.% Layers mono-layer and bi-layer spectroscopy Oxygen 3.0 è 1.0At.% Lateral Carbon 8.0 è 2.0At.% up to 5.0 µm SEM dimensions Method XPS IR UV Wavelenght (nm) 4096 1024 256 Band Gap ~6eV Energy BORON NITRIDE GRAPHENE Graphene Metals Semi- Plastics Boron Conductor Nitride 0.125 0.25 0.50 1.00 2.00 4.00 8.00 Conductors Semi-Conductors Insulators Energy (eV) Diagram showing extremes of electrical conductivity, with Hexagonal boron nitride is white in colour and is unusual as boron nitride having an ultra-wide bandgap. it absorbs high energy UV light, whereas graphene absorbs all light frequencies. What is h-BN? Boron and nitrogen are neighbours of carbon in boron nitride (h-BN). It also happens to be the the Periodic Table. Just as carbon can exist as softest of the BN polymorphs. -
Techniques of Preparation and Crystal Chemistry of Transuranic Chalcogenides and Pnictides D
Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides D. Damien, R. Haire, J. Peterson To cite this version: D. Damien, R. Haire, J. Peterson. Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides. Journal de Physique Colloques, 1979, 40 (C4), pp.C4-95-C4-100. 10.1051/jphyscol:1979430. jpa-00218826 HAL Id: jpa-00218826 https://hal.archives-ouvertes.fr/jpa-00218826 Submitted on 1 Jan 1979 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE Colloque C4, supplément au n° 4, Tome 40, avril 1979, page C4-95 Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides (*) D. A. Damien (**), R. G. Haire and J. R. Peterson (t) Transuranium Research Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37830, U.S.A. Résumé. — La cristallochimie d'un certain nombre de chalcogénures et pnictures d'éléments transuraniens a été étudiée en utilisant les isotopes Am, Cm, Bk et Cf. Les composés ont été préparés par réaction directe du métal avec l'élément chalcogène ou pnictogène à température élevée. Les chalcogénures supérieurs ont été dissociés thermiquement pour donner des composés à stœchiométrie plus basse dont les sesquichalco- génures constituent la limite. -
Carbides and Nitrides of Zirconium and Hafnium
materials Review Carbides and Nitrides of Zirconium and Hafnium Sergey V. Ushakov 1,* , Alexandra Navrotsky 1,* , Qi-Jun Hong 2,* and Axel van de Walle 2,* 1 Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California at Davis, Davis, CA 95616, USA 2 School of Engineering, Brown University, Providence, RI 02912, USA * Correspondence: [email protected] (S.V.U.); [email protected] (A.N.); [email protected] (Q.-J.H.); [email protected] (A.v.d.W.) Received: 6 August 2019; Accepted: 22 August 2019; Published: 26 August 2019 Abstract: Among transition metal carbides and nitrides, zirconium, and hafnium compounds are the most stable and have the highest melting temperatures. Here we review published data on phases and phase equilibria in Hf-Zr-C-N-O system, from experiment and ab initio computations with focus on rocksalt Zr and Hf carbides and nitrides, their solid solutions and oxygen solubility limits. The systematic experimental studies on phase equilibria and thermodynamics were performed mainly 40–60 years ago, mostly for binary systems of Zr and Hf with C and N. Since then, synthesis of several oxynitrides was reported in the fluorite-derivative type of structures, of orthorhombic and cubic higher nitrides Zr3N4 and Hf3N4. An ever-increasing stream of data is provided by ab initio computations, and one of the testable predictions is that the rocksalt HfC0.75N0.22 phase would have the highest known melting temperature. Experimental data on melting temperatures of hafnium carbonitrides are absent, but minimum in heat capacity and maximum in hardness were reported for Hf(C,N) solid solutions. -
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Original citation: Zhenqing, Li, He, Chaoyu, Ouyang, Tao, Zhang, Chunxiao, Tang, Chao, Roemer, Rudolf A. and Zhong, Jianxin (2018) New allotropes of phosphorene with remarkable stability and intrinsic piezoelectricity. Physical Review Applied, 9 . 044032. doi:10.1103/PhysRevApplied.9.044032 Permanent WRAP URL: http://wrap.warwick.ac.uk/101768 Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available. Copies of full items can be used for personal research or study, educational, or not-for-profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher statement: © 2018 American Physical Society Published version: https://doi.org/10.1103/PhysRevApplied.9.044032 A note on versions: The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher’s version. Please see the ‘permanent WRAP url’ above for details on accessing the published version and note that access may require a subscription. For more information, please contact the WRAP Team at: [email protected] warwick.ac.uk/lib-publications New allotropes of phosphorene with remarkable stability and intrinsic piezoelectricity Zhenqing Li,1, 2 Chaoyu He,1, 2, ∗ Tao Ouyang,1, 2 Chunxiao Zhang,1, 2 Chao Tang,1, 2, y Rudolf A. -
Recent Advances in Synthesis, Properties, and Applications of Phosphorene
www.nature.com/npj2dmaterials REVIEW ARTICLE OPEN Recent advances in synthesis, properties, and applications of phosphorene Meysam Akhtar1,2, George Anderson1, Rong Zhao1, Adel Alruqi1, Joanna E. Mroczkowska3, Gamini Sumanasekera1,2 and Jacek B. Jasinski2 Since its first fabrication by exfoliation in 2014, phosphorene has been the focus of rapidly expanding research activities. The number of phosphorene publications has been increasing at a rate exceeding that of other two-dimensional materials. This tremendous level of excitement arises from the unique properties of phosphorene, including its puckered layer structure. With its widely tunable band gap, strong in-plane anisotropy, and high carrier mobility, phosphorene is at the center of numerous fundamental studies and applications spanning from electronic, optoelectronic, and spintronic devices to sensors, actuators, and thermoelectrics to energy conversion, and storage devices. Here, we review the most significant recent studies in the field of phosphorene research and technology. Our focus is on the synthesis and layer number determination, anisotropic properties, tuning of the band gap and related properties, strain engineering, and applications in electronics, thermoelectrics, and energy storage. The current needs and likely future research directions for phosphorene are also discussed. npj 2D Materials and Applications (2017) 1:5 ; doi:10.1038/s41699-017-0007-5 INTRODUCTION properties, including high carrier mobility, ultrahigh surface area, Since the discovery of graphene in 2004 (ref. 1), there has been a excellent thermal conductivity, and quantum confinement effect 9 quest for new two-dimensional (2D) materials aimed at fully have been well documented. However, the lack of band gap is a exploring new fundamental phenomena stemming from quantum serious limitation for the use of graphene in electronic devices. -
Silicon Nitride, a Close to Ideal Ceramic Material for Medical Application
ceramics Review Silicon Nitride, a Close to Ideal Ceramic Material for Medical Application Robert B. Heimann Am Stadtpark 2A, D-02826 Görlitz, Germany; [email protected]; Tel.: +49-3581-667851 Abstract: This topical review describes the salient results of recent research on silicon nitride, a ceramic material with unique properties. The outcome of this ongoing research strongly encourages the use of monolithic silicon nitride and coatings as contemporary and future biomaterial for a variety of medical applications. Crystallographic structure, the synthesis and processing of monolithic structures and coatings, as well as examples of their medical applications that relate to spinal, orthopedic and dental implants, bone grafts and scaffolds, platforms for intelligent synthetic neural circuits, antibacterial and antiviral particles and coatings, optical biosensors, and nano-photonic waveguides for sophisticated medical diagnostic devices are all covered in the research reviewed herein. The examples provided convincingly show that silicon nitride is destined to become a leader to replace titanium and other entrenched biomaterials in many fields of medicine. Keywords: silicon nitride; structure; properties; processing; coatings; spinal implants; arthroplastic implants; bone scaffolds; dental implants; neural circuits; biosensors; medical diagnostics Citation: Heimann, R.B. Silicon 1. Introduction Nitride, a Close to Ideal Ceramic Material for Medical Application. Today, the research and development of metallic, ceramic, polymeric and composite Ceramics 2021, 4, 208–223. biomaterials have progressed to a high level of involvement and sophistication. This is https://doi.org/10.3390/ related to the fact that an ever-increasing part of the world population is in need of the repair ceramics4020016 or replacement of dysfunctional or damaged parts of the body, such as dental roots and teeth, alveolar ridge augmentation, intraocular lenses, heart pacemakers, cochlear implants, Academic Editors: Stuart Hampshire and hip and knee endoprostheses [1].