Which Pnictogen Is Best?† Cite This: New J
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CHAPTER 8: Diffusion
1 Chapter 8 CHAPTER 8: Diffusion Diffusion and ion implantation are the two key processes to introduce a controlled amount of dopants into semiconductors and to alter the conductivity type. Figure 8.1 compares these two techniques and the resulting dopant profiles. In the diffusion process, the dopant atoms are introduced from the gas phase of by using doped-oxide sources. The doping concentration decreases monotonically from the surface, and the in-depth distribution of the dopant is determined mainly by the temperature and diffusion time. Figure 8.1b reveals the ion implantation process, which will be discussed in Chapter 9. Generally speaking, diffusion and ion implantation complement each other. For instance, diffusion is used to form a deep junction, such as an n-tub in a CMOS device, while ion implantation is utilized to form a shallow junction, like a source / drain junction of a MOSFET. Boron is the most common p-type impurity in silicon, whereas arsenic and phosphorus are used extensively as n-type dopants. These three elements are highly soluble in silicon with solubilities exceeding 5 x 1020 atoms / cm3 in the diffusion temperature range (between 800oC and 1200oC). These dopants can be introduced via several means, including solid sources (BN for B, As2O3 for As, and P2O5 for P), liquid sources (BBr3, AsCl3, and POCl3), and gaseous sources (B2H6, AsH3, and PH3). Usually, the gaseous source is transported to the semiconductor surface by an inert gas (e.g. N2) and is then reduced at the surface. 2 Chapter 8 Figure 8.1: Comparison of (a) diffusion and (b) ion implantation for the selective introduction of dopants into a semiconductor substrate. -
Of the Periodic Table
of the Periodic Table teacher notes Give your students a visual introduction to the families of the periodic table! This product includes eight mini- posters, one for each of the element families on the main group of the periodic table: Alkali Metals, Alkaline Earth Metals, Boron/Aluminum Group (Icosagens), Carbon Group (Crystallogens), Nitrogen Group (Pnictogens), Oxygen Group (Chalcogens), Halogens, and Noble Gases. The mini-posters give overview information about the family as well as a visual of where on the periodic table the family is located and a diagram of an atom of that family highlighting the number of valence electrons. Also included is the student packet, which is broken into the eight families and asks for specific information that students will find on the mini-posters. The students are also directed to color each family with a specific color on the blank graphic organizer at the end of their packet and they go to the fantastic interactive table at www.periodictable.com to learn even more about the elements in each family. Furthermore, there is a section for students to conduct their own research on the element of hydrogen, which does not belong to a family. When I use this activity, I print two of each mini-poster in color (pages 8 through 15 of this file), laminate them, and lay them on a big table. I have students work in partners to read about each family, one at a time, and complete that section of the student packet (pages 16 through 21 of this file). When they finish, they bring the mini-poster back to the table for another group to use. -
Donor Qubits in Silicon
04/09/2015 Experiments with spin qubits in siliconDonor and diamond qubits in silicon Gavin W Morley University of Warwick Gavin W Morley, Spin qubits in silicon and diamond, QuICC Warwick, August 2015 Experiments with spin qubits in silicon and diamond: overview • Lecture 1 – Magnetic resonance – Silicon • Lecture 2 – Silicon (cont.) Lab tours • Lecture 3 Friday morning – Diamond Gavin W Morley, Spin qubits in silicon and diamond, QuICC Warwick, August 2015 1 04/09/2015 Experiments with spin qubits in silicon and diamond: overview • Lecture 1 – Magnetic resonance 1. Prepare (spin Hamiltonian) 2. Control (electromagnetic pulses) 3. Measure (spin state readout) – Silicon Gavin W Morley, Spin qubits in silicon and diamond, QuICC Warwick, August 2015 – Magnetic resonance 1. Prepare (spin Hamiltonian) 2. Control (electromagnetic pulses) 3. Measure (spin state readout) Gavin W Morley, Spin qubits in silicon and diamond, QuICC Warwick, August 2015 2 04/09/2015 Magnetic resonance: prepare - put a spin ½ into a magnetic field H Ŝ Hamiltonian = ωS z with energy, ħ ωS = g µB B0 for g-factor, g ~ 2, Bohr magneton µB = e ħ/2me, electron spin S = ½ Energy m = ½ of a s spin Magnetic field, B0 ms = -½ Gavin W Morley, Spin qubits in silicon and diamond, QuICC Warwick, August 2015 Magnetic resonance: prepare - put a spin ½ into a magnetic field Larmor precession at angular frequency ωS Gavin W Morley, Spin qubits in silicon and diamond, QuICC Warwick, August 2015 3 04/09/2015 Magnetic resonance: prepare - put a spin ½ into a magnetic field Larmor precession -
Donor-Acceptor Methods for Band Gap Reduction in Conjugated Polymers: the Role of Electron Rich Donor Heterocycles
DONOR-ACCEPTOR METHODS FOR BAND GAP REDUCTION IN CONJUGATED POLYMERS: THE ROLE OF ELECTRON RICH DONOR HETEROCYCLES By CHRISTOPHER A. THOMAS A DISSERTATION PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY UNIVERSITY OF FLORIDA 2002 Copyright 2002 by Christopher A. Thomas All rights reserved. ACKNOWLEDGMENTS I thank my parents, Nancy and Larry, for their continuous support and attempts to understand and encourage me during what has been simultaneously the most enjoyable and most stressful part of my life. They made this document possible by encouraging and par- ticipating in experiences that ensured I would have the backgound and interest in trying to figure out how the world works. The decision about whom to work for in graduate school is one of the events I have agonized the most about in my life. As promised, the graduate advisor-student relationship is a complicated entity consisting of advisor, boss, counselor and friend that can change its active role without warning. Despite this, I am positive that there is no other person that I would rather have worked with during this process. I especially appreciate being given an unusual amount of decision making and direction setting power in the projects I was involved with and the freedom to explore aspects of science that interested me even when they did not overlap cleanly with Professor Reynolds’ research interests or funding. For their major contributions to my enjoyment and interest in chemistry, I thank Joe Carolan for his contagious enthusiasm, and Joel Galanda, who immensely affected the three years of my life he was involved with my chemistry and physical science education. -
Techniques of Preparation and Crystal Chemistry of Transuranic Chalcogenides and Pnictides D
Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides D. Damien, R. Haire, J. Peterson To cite this version: D. Damien, R. Haire, J. Peterson. Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides. Journal de Physique Colloques, 1979, 40 (C4), pp.C4-95-C4-100. 10.1051/jphyscol:1979430. jpa-00218826 HAL Id: jpa-00218826 https://hal.archives-ouvertes.fr/jpa-00218826 Submitted on 1 Jan 1979 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE Colloque C4, supplément au n° 4, Tome 40, avril 1979, page C4-95 Techniques of preparation and crystal chemistry of transuranic chalcogenides and pnictides (*) D. A. Damien (**), R. G. Haire and J. R. Peterson (t) Transuranium Research Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37830, U.S.A. Résumé. — La cristallochimie d'un certain nombre de chalcogénures et pnictures d'éléments transuraniens a été étudiée en utilisant les isotopes Am, Cm, Bk et Cf. Les composés ont été préparés par réaction directe du métal avec l'élément chalcogène ou pnictogène à température élevée. Les chalcogénures supérieurs ont été dissociés thermiquement pour donner des composés à stœchiométrie plus basse dont les sesquichalco- génures constituent la limite. -
Donor-Acceptor Properties of Trivalent Phosphorus and Arsenic Ligands Larry James Vande Griend Iowa State University
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1975 Donor-acceptor properties of trivalent phosphorus and arsenic ligands Larry James Vande Griend Iowa State University Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Inorganic Chemistry Commons Recommended Citation Vande Griend, Larry James, "Donor-acceptor properties of trivalent phosphorus and arsenic ligands " (1975). Retrospective Theses and Dissertations. 5764. https://lib.dr.iastate.edu/rtd/5764 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. INFORMATION TO USERS This material was produced from a microfilm copy of the original document. While the most advanced technologcal means to photogaph and reproduce this document have been used, the quality is heavily dependent upon the quality of the original submitted. The following explanation of techniques is provided to help you understand markings or patterns which may appear on this reproduction. 1. The sign or "terget" for pages apparently lacking from the document photographed is "Missing Page(s)". If it was possible to obtain the missing page(s) or section, they are spliced into the film along with adjacent pages. This may have necasitstsd cutung thru an image and du^icating adjacent pages to insure you complete continuity. 2. When an image on the film is obliterated with a large round black mark, it is an indication that the photographer suspected that the copy may have moved during exposure and thus cause a blurred image. -
CHAPTER 1: Semiconductor Materials & Physics
Chapter 1 1 CHAPTER 1: Semiconductor Materials & Physics In this chapter, the basic properties of semiconductors and microelectronic devices are discussed. 1.1 Semiconductor Materials Solid-state materials can be categorized into three classes - insulators, semiconductors, and conductors. As shown in Figure 1.1, the resistivity of semiconductors, ρ, is typically between 10-2 and 108 Ω-cm. The portion of the periodic table related to semiconductors is depicted in Table 1.1. Figure 1.1: Typical range of conductivities for insulators, semiconductors, and conductors. Semiconductors can be composed of a single element such as silicon and germanium or consist of two or more elements for compound semiconductors. A binary III-V semiconductor is one comprising one element from Column III (such as gallium) and another element from Column V (for instance, arsenic). The common element and compound semiconductors are displayed in Table 1.2. City University of Hong Kong Chapter 1 2 Table 1.1: Portion of the Periodic Table Related to Semiconductors. Period Column II III IV V VI 2 B C N Boron Carbon Nitrogen 3 Mg Al Si P S Magnesium Aluminum Silicon Phosphorus Sulfur 4 Zn Ga Ge As Se Zinc Gallium Germanium Arsenic Selenium 5 Cd In Sn Sb Te Cadmium Indium Tin Antimony Tellurium 6 Hg Pd Mercury Lead Table 1.2: Element and compound semiconductors. Elements IV-IV III-V II-VI IV-VI Compounds Compounds Compounds Compounds Si SiC AlAs CdS PbS Ge AlSb CdSe PbTe BN CdTe GaAs ZnS GaP ZnSe GaSb ZnTe InAs InP InSb City University of Hong Kong Chapter 1 3 1.2 Crystal Structure Most semiconductor materials are single crystals. -
Organometallic Pnictogen Chemistry
Institut für Anorganische Chemie 2014 Fakultät für Chemie und Pharmazie | Sabine Reisinger aus Regensburg, geb. Scheuermayer am 15.07.1983 Studium: Chemie, Universität Regensburg Abschluss: Diplom Promotion: Prof. Dr. Manfred Scheer, Institut für Anorganische Chemie Sabine Reisinger Die vorliegende Arbeit enthält drei Kapitel zu unterschiedlichen Aspekten der metallorganischen Phosphor- und Arsen-Chemie. Zunächst werden Beiträge zur supramolekularen Chemie mit 5 Pn-Ligandkomplexen basierend auf [Cp*Fe(η -P5)] und 5 i [Cp*Fe(η - Pr3C3P2)] gezeigt, gefolgt von der Eisen-vermittelten Organometallic Pnictogen Aktivierung von P4, die zu einer selektiven C–P-Bindungsknüpfung führt, während das dritte Kapitel die Verwendung von Phosphor Chemistry – Three Aspects und Arsen als Donoratome in mehrkernigen Komplexen mit paramagnetischen Metallionen behandelt. Sabine Reisinger 2014 Alumniverein Chemie der Universität Regensburg E.V. [email protected] http://www.alumnichemie-uniregensburg.de Aspects Three – Chemistry Pnictogen Organometallic Fakultät für Chemie und Pharmazie ISBN 978-3-86845-118-4 Universität Regensburg Universitätsstraße 31 93053 Regensburg www.uni-regensburg.de 9 783868 451184 4 Sabine Reisinger Organometallic Pnictogen Chemistry – Three Aspects Organometallic Pnictogen Chemistry – Three Aspects Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften (Dr. rer. nat.) der Fakultät für Chemie und Pharmazie der Universität Regensburg vorgelegt von Sabine Reisinger, geb. Scheuermayer Regensburg 2014 Die Arbeit wurde von Prof. Dr. Manfred Scheer angeleitet. Das Promotionsgesuch wurde am 20.06.2014 eingereicht. Das Kolloquium fand am 11.07.2014 statt. Prüfungsausschuss: Vorsitzender: Prof. Dr. Helmut Motschmann 1. Gutachter: Prof. Dr. Manfred Scheer 2. Gutachter: Prof. Dr. Henri Brunner weiterer Prüfer: Prof. Dr. Bernhard Dick Dissertationsreihe der Fakultät für Chemie und Pharmazie der Universität Regensburg, Band 4 Herausgegeben vom Alumniverein Chemie der Universität Regensburg e.V. -
Lecture 7: Extrinsic Semiconductors - Fermi Level
Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 EF in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < Ts)................7 3.2 Medium temperature regime (Ts < T < Ti)...........8 1 Dopant materials Typical doping concentrations in semiconductors are in ppm (10−6) and ppb (10−9). This small addition of `impurities' can cause orders of magnitude increase in conductivity. The impurity has to be of the right kind. For Si, n-type impurities are P, As, and Sb while p-type impurities are B, Al, Ga, and In. These form energy states close to the conduction and valence band and the ionization energies are a few tens of meV . Ge lies the same group IV as Si so that these elements are also used as impurities for Ge. The ionization energy data n-type impurities for Si and Ge are summarized in table 1. The ionization energy data for p-type impurities for Si and Ge is summarized in table 2. The dopant ionization energies for Ge are lower than Si. Ge has a lower band gap (0.67 eV ) compared to Si (1.10 eV ). Also, the Table 1: Ionization energies in meV for n-type impurities for Si and Ge. Typical values are close to room temperature thermal energy. Material P As Sb Si 45 54 39 Ge 12 12.7 9.6 1 MM5017: Electronic materials, devices, and fabrication Table 2: Ionization energies in meV for p-type impurities. Typical values are comparable to room temperature thermal energy. -
The Basic Elements of Life's
American Journal of Engineering and Applied Sciences Original Research Paper The Basic Elements of Life's 1Raffaella Aversa, 2Victoria Petrescu, 1Antonio Apicella and 2Ion Tiberiu Petrescu 1University of Naples, Italy 2University of Bucharest Polytechnic, Romania Article history Abstract: The four basic elements of life are: Oxygen, hydrogen, nitrogen Received: 01-12-2016 and phosphorus. These four elements are found in abundance in both the Revised: 09-12-2016 human body and in animals. There are other elements that compose the Accepted: 17-12-2016 human body, but the four we've highlighted participate in all life processes. Besides, these four elements make up ATP chains (molecule), which Corresponding Author: Florian Ion T. Petrescu governs and controls the body entirely energy processes and physiological University of Bucharest and pathological processes of the human body. Oxygen is the pivot, which Polytechnic, Romania produces water and air and it is indispensable to the life. Hydrogen Email: [email protected] participates with oxygen to produce water, without which life would not be possible. Nitrogen with oxygen constitutes basic elements of air that compose the Earth's atmosphere. Phosphorus is the last element of human energy chain. It is the fire and light. In other words, human energy chain consists of four basic elements, or three compounds: Water, air and fire (light). In genetics, all cellular energy processes are driven and controlled by ATP molecule type. If we consider the chain of human genes, account must also be taken of the element carbon. In this mode, the four elements of life become the five elements of life: Oxygen, hydrogen, nitrogen, phosphorus and carbon. -
The Metal-Semiconductor Junction: Review
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a) and after (b) contact Barrier Height Built-in Potential M-S Junctions: Thermal Equilibrium Depletion Region Region Depletion Energy band diagram of a metal-semiconductor contact in thermal equilibrium. Under Bias Full depletion approximation Review (a) Charge density, (b) electric field, (c) potential and (d) energy with the full depletion analysis. MOS Capacitors: Review The MOS capacitor consists of a Metal-Oxide-Semiconductor structure Current Transport at the MS Interface The current across a metal-semiconductor junction is mainly due to majority carriers. Three distinctly different mechanisms exist: diffusion of carriers from the semiconductor into the metal, thermionic emission of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. Diffusion Current: driving force is distributed over the length of the depletion layer. Thermionic Emission: only energetic carriers, with energy equal to or larger than the conduction band energy at the metal-semiconductor interface, contribute to the current flow. Tunneling: the wave-nature of the electrons, allowing them to penetrate through thin barriers. Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is large compared to the mean free path, so that the concepts of drift and diffusion are valid. The current depends exponentially on the applied voltage, Va, and the barrier height, B. Electric-field at MS Junction: The thermionic emission theory assumes that electrons, with an energy larger than the top of the barrier, will cross the barrier provided they move towards the barrier. -
Electrons and Holes in Semiconductors
Hu_ch01v4.fm Page 1 Thursday, February 12, 2009 10:14 AM 1 Electrons and Holes in Semiconductors CHAPTER OBJECTIVES This chapter provides the basic concepts and terminology for understanding semiconductors. Of particular importance are the concepts of energy band, the two kinds of electrical charge carriers called electrons and holes, and how the carrier concentrations can be controlled with the addition of dopants. Another group of valuable facts and tools is the Fermi distribution function and the concept of the Fermi level. The electron and hole concentrations are closely linked to the Fermi level. The materials introduced in this chapter will be used repeatedly as each new device topic is introduced in the subsequent chapters. When studying this chapter, please pay attention to (1) concepts, (2) terminology, (3) typical values for Si, and (4) all boxed equations such as Eq. (1.7.1). he title and many of the ideas of this chapter come from a pioneering book, Electrons and Holes in Semiconductors by William Shockley [1], published Tin 1950, two years after the invention of the transistor. In 1956, Shockley shared the Nobel Prize in physics for the invention of the transistor with Brattain and Bardeen (Fig. 1–1). The materials to be presented in this and the next chapter have been found over the years to be useful and necessary for gaining a deep understanding of a large variety of semiconductor devices. Mastery of the terms, concepts, and models presented here will prepare you for understanding not only the many semiconductor devices that are in existence today but also many more that will be invented in the future.