2 the Scaling of Mosfets, Moore's Law, and ITRS
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
A Review Paper on Enhancement of Radio Frequency Microelectro Mechanical Systems
International Journal of Engineering Research & Technology (IJERT) ISSN: 2278-0181 Vol. 3 Issue 10, October- 2014 A Review Paper on Enhancement of Radio Frequency MicroElectro Mechanical Systems Shilpa G. Kulkarni Electronics And Telecommunication Engineering V.I.T.Wadala Mumbai - India Abstract—Radio Frequency Micro Electro Mechanical Systems (RF MEMS) refers to the design and fabrication of committed II. NEED FOR RF MEMS MEMS for RF circuits. RF MEMS is a multi-disciplinary area MEMS switches combine the advantageous properties of in which the components operate Micromechanical And / Or mechanical and semiconductor switches.RF MEMS have components are fabricated using micromachining and these advantages such as, Low insertion loss, High isolation, Lower components are used in RF systems. The regular microwave switches currently employed in the microwave industry are power consumption, Excellent signal linearity, Better mechanical switches and semiconductor switches. Mechanical impedance match, Less dispersion , Miniaturization, Simple coaxial and waveguide switches offer benefits such as, low control circuits, High volume production possible, Very large insertion loss, large off-state isolation and high power handling bandwidth , Resistant to external environment. Table Iand Fig capabilities. Yet, they are bulky, heavy and slow. Semiconductor 1provide a comparison of RF MEMS Switches with the switches provide switching at a much faster speed and are conventional switches. smaller in size and weight, but are inferior in insertion loss, DC power consumption, isolation and power handling capabilities TABLE I. COMPARISON OF VARIOUS PARAMETERS[2] than their mechanical counterparts. MEMS switches promise to RF combine the advantageous properties of mechanical and Parameter PIN FET semiconductor switches. There are nevertheless few issues in RF MEMS MEMS Switch like, Actuation Speed, Power handling capacity, Voltage(V) 20-80 ±3-5 3-5 Stiction and Actuation voltage etc. -
"Bob" Schreiner
Oral History of Robert “Bob” Schreiner Interviewed by: Stephen Diamond Recorded: June 10, 2013 Mountain View, California CHM Reference number: X6873.2014 © 2013 Computer History Museum Oral History of Robert “Bob” Schreiner Stephen Diamond: We're here at the Computer History Museum with Bob Schreiner. It's June 10th, 2013, and we're going to talk about the oral history of Synertek and the 6502. Welcome, Bob. Thanks for being here. Can you introduce yourself to us? Robert “Bob” Schreiner: Okay. My name is Bob Schreiner. I'm an ex-Fairchilder, one of the Fairchildren in the valley, and then involved in running a couple of other small semiconductor companies, and I started a semiconductor company. Diamond: So that would be Synertek. Schreiner: Synertek. Diamond: Tell us about that. Schreiner: Okay. As you know from an earlier session I left Fairchild Semiconductor around 1971. And at the time I left I was running the LSI program at Fairchild, and I was a big believer that the future marketplace for MOS technology would be in the custom area. And since Fairchild let that whole thing fall apart, I decided there's got to be room for a company to start up to do that very thing, work with big producers of hardware and develop custom chips for them so they would have a propriety product that would be difficult to copy. So I wrote a business plan, and I went around to a number of manufacturers. I had a computer guy [General Automation], and I had Bulova Watch Company, and I had a company that made electronic telephones [American Telephones], and who was the fourth guy? Escapes my memory right now, but the pitch basically was, "Your business, which now you manufacture things with discrete components, it's going to change. -
Three-Dimensional Integrated Circuit Design: EDA, Design And
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change. -
DEVICE and CIRCUIT DESIGN for VLSI by Amr Mohsen
31 DEVICE AND CIRCUIT DESIGN FOR VLSI by Amr Mohsen* Intel Corporation 3065 Bowers Avenue Santa Clara, California 95051 ABSTRACT A review of the device and circuit design complexity and limitations for VLSI is presented. VLSI device performance will be limited by second order device effects, interconnection line de lay and current density and chip power dissipation. The complexity of VLSI circuit design will require hierarchial structured design methodology with special consideration of testability dnd more emphasis on redundancy. New organizations of logic function architectures and smart memories will evolve to take advantage of the topological properties of the VLSI silicon technology. * The author is also on the faculty of California Institute of Technology CALTECH CONFERENCE ON VLSI, January 1979 32 Amr Mohsen I. INTRODUCTION: As semiconductor technology has evolved from discrete to small-scale to medium-scale and through large-scale integration levels a rapid decrease in the cost per function provided by the technology have opened up new applications and industries. Today there is a large interest in the next phase of integration: very large scale integration (VLSI). The semi conductor technology will be able to fabricate chips with more than lOOK devices (l) in the 1980's. The continuous scaling of the semi- conductor devices and increase in components counts on a single chip is resulting in more complex technology developments, device and circuit designs and product definition. In this review paper, projections of how device technology will evolve in the future and the problems and limitations of device and circuit design for VLSI are presented. VLSI TECHNOLOGIES: In Fig. -
Mos Technology, 1963-1974: a Dozen Crucial Years
One of IBM’s most important MOS Technology, 1963-1974: A Dozen Crucial Years contributions to MOS research came from the Components Division, which was responsible for developing by Ross Knox Bassett and manufacturing bipolar transistors for its large computer systems and had very little interest in MOS transistors line can be drawn from the as such. As part of its work on Frosch’s and Derick’s work on bipolar transistors, Donald Kerr and silicon dioxide to the MOS (metal- a group of engineers had discovered A that depositing small amounts of oxide-semiconductor) transistor’s domi- nance of semiconductor technology, phosphorous on the silicon-dioxide but it is neither short nor straight. That surface and forming a layer of line has several discernable segments, phosphosilicate glass (PSG) could first from Frosch and Derick’s work, limit the amount of leakage in bipolar until 1963. In this interval, by and transistors and play an important role large, no one thought seriously about a in enhancing the stability of MOS metal-oxide-semiconductor as a viable transistors. Jerome Eldridge and Pieter technology in its own right. The second Balk from IBM Research implemented segment runs from 1963, when the this work by using thin layers of combination of integrated circuits and PSG to make stable MOS devices. the planar manufacturing process had Other important work on the physics FIG. 2. Drawing of Atalla and Kahng’s “silicon-silicon dioxide surface device,” now known as and chemistry of MOS devices done led people to see MOS transistors as a the MOS transistor, from a 1961 Bell Labs technical memorandum by Kahng. -
Design of a Microelectronic Manufacturing Laboratory
2006-1635: DESIGN OF A MICROELECTRONIC MANUFACTURING LABORATORY Stilson Applin, Montana State University Todd Kaiser, Montana State University Page 11.407.1 Page © American Society for Engineering Education, 2006 Design of a Microelectronic Manufacturing Laboratory Abstract The design of an undergraduate microelectronic manufacturing laboratory for teaching will be described in the following paper. This laboratory emphasizes learning the processes of semiconductor manufacturing and clean room protocol. The laboratory is housed in a 500 square foot, class 10,000 facility. In the laboratory the students, with a junior standing and a science based background, will use a pre-made six mask set to create P and N type transistors as well as inverters and diodes. The students will be conducting oxidization, RCA clean, photolithography, etching, diffusion, metallization and other processes. A brief description of these processes and the methods used to teach them will also be described. In addition to these processes students will also learn about clean room protocol, chemical safety, and testing devices. All of these skills will be marketable to future employers and graduate schools. These same skills and processes will be covered in a seminar course for educators, with the main purpose of inspiring the high school teachers to teach about semiconductor manufacturing. The cost effective design is what makes the laboratory unique. The expenditure control is important due to the size of the Electrical Engineering department. The department has only 250 undergraduates and 40 graduate students, thus internal funding is difficult to obtain. A user fee paid by the students will cover the funding. This fee will be small and manageable for any college student. -
The Economic Impact of Moore's Law: Evidence from When It Faltered
The Economic Impact of Moore’s Law: Evidence from when it faltered Neil Thompson Sloan School of Management, MIT1 Abstract “Computing performance doubles every couple of years” is the popular re- phrasing of Moore’s Law, which describes the 500,000-fold increase in the number of transistors on modern computer chips. But what impact has this 50- year expansion of the technological frontier of computing had on the productivity of firms? This paper focuses on the surprise change in chip design in the mid-2000s, when Moore’s Law faltered. No longer could it provide ever-faster processors, but instead it provided multicore ones with stagnant speeds. Using the asymmetric impacts from the changeover to multicore, this paper shows that firms that were ill-suited to this change because of their software usage were much less advantaged by later improvements from Moore’s Law. Each standard deviation in this mismatch between firm software and multicore chips cost them 0.5-0.7pp in yearly total factor productivity growth. These losses are permanent, and without adaptation would reflect a lower long-term growth rate for these firms. These findings may help explain larger observed declines in the productivity growth of users of information technology. 1 I would like to thank my PhD advisors David Mowery, Lee Fleming, Brian Wright and Bronwyn Hall for excellent support and advice over the years. Thanks also to Philip Stark for his statistical guidance. This work would not have been possible without the help of computer scientists Horst Simon (Lawrence Berkeley National Lab) and Jim Demmel, Kurt Keutzer, and Dave Patterson in the Berkeley Parallel Computing Lab, I gratefully acknowledge their overall guidance, their help with the Berkeley Software Parallelism Survey and their hospitality in letting me be part of their lab. -
Vlsi Design Lecture Notes B.Tech (Iv Year – I Sem) (2018-19)
VLSI DESIGN LECTURE NOTES B.TECH (IV YEAR – I SEM) (2018-19) Prepared by Dr. V.M. Senthilkumar, Professor/ECE & Ms.M.Anusha, AP/ECE Department of Electronics and Communication Engineering MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY (Autonomous Institution – UGC, Govt. of India) Recognized under 2(f) and 12 (B) of UGC ACT 1956 (Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade - ISO 9001:2015 Certified) Maisammaguda, Dhulapally (Post Via. Kompally), Secunderabad – 500100, Telangana State, India Unit -1 IC Technologies, MOS & Bi CMOS Circuits Unit -1 IC Technologies, MOS & Bi CMOS Circuits UNIT-I IC Technologies Introduction Basic Electrical Properties of MOS and BiCMOS Circuits MOS I - V relationships DS DS PMOS MOS transistor Threshold Voltage - VT figure of NMOS merit-ω0 Transconductance-g , g ; CMOS m ds Pass transistor & NMOS Inverter, Various BiCMOS pull ups, CMOS Inverter Technologies analysis and design Bi-CMOS Inverters Unit -1 IC Technologies, MOS & Bi CMOS Circuits INTRODUCTION TO IC TECHNOLOGY The development of electronics endless with invention of vaccum tubes and associated electronic circuits. This activity termed as vaccum tube electronics, afterward the evolution of solid state devices and consequent development of integrated circuits are responsible for the present status of communication, computing and instrumentation. • The first vaccum tube diode was invented by john ambrase Fleming in 1904. • The vaccum triode was invented by lee de forest in 1906. Early developments of the Integrated Circuit (IC) go back to 1949. German engineer Werner Jacobi filed a patent for an IC like semiconductor amplifying device showing five transistors on a common substrate in a 2-stage amplifier arrangement. -
6502 Introduction
6502 Introduction Philipp Koehn 18 September 2019 Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 1 some history Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 1971 2 • First microprocessor on an integrated circuit: Intel 4004 • 4-bit central processing unit, 12 bit address space (4KB) Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 1975 3 • MOS Technology 6502 • Dominant CPU in home computers for a decade (Atari, Apple II, Nintendo Entertainment System, Commodore PET) Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 1977 4 • Atari 2600 • Video game console: Pong, Pac Man, ... connected to TV Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 1980 5 • Commodore VIC20 • 1 MHz, 5KB RAM, BASIC, 3.5KB RAM, 176x184 3 bit color video Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 1982 6 • Commodore C64 • 64KB RAM, 320x200 4 bit color video Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 Commodore C64 7 • BASIC programming language, but serious programs written in assembly • No fancy stuff like multi-process, user accounts, virtual memory, etc. • Machine itself had no mass storage - had to buy tape drive, then floppy disk drive, machine was obsolete once hard drives came around Philipp Koehn Computer Systems Fundamentals: 6502 Introduction 18 September 2019 BASIC Demo 8 • Commands get executed (just like Python interpreter) -
Introduction to Micro Electromechanical Systems”, F
A not so short Introduction to Micro Electromechanical Systems Franck CHOLLET, Haobing LIU 1 Please note that this work is published under a : Attribution-NonCommercial 2.5 You are free: • to copy, distribute, display, and perform the work • to make derivative works Under the following conditions: Attribution. Please attribute this work using: “A not so short Introduction to Micro Electromechanical Systems”, F. Chollet, HB. Liu, Jan. 2006, Noncommercial. You may not use this work for commercial purposes. • For any reuse or distribution, you must make clear to others the license terms of this work. • Any of these conditions can be waived if you get permission from the copyright holder. Your fair use and other rights are in no way affected by the above. This is a human-readable summary of the Legal Code (http://creativecommons.org/licenses/by-nc/2.5/legalcode). Table of Content 1. Why MEMS?.................................................................................................................4 1.1. What is MEMS and comparison with microelectronics .....................................4 1.2. Why MEMS technology .....................................................................................4 1.2.1. Advantages offered...................................................................................4 1.2.2. Diverse products and markets ..................................................................5 1.2.3. Economy of MEMS manufacturing and applications ..............................6 1.3. Major drivers for MEMS technology..................................................................8 -
Microelectronics: Devices to Circuits
MICROELECTRONICS: DEVICES TO CIRCUITS PROF.SUDEB DASGUPTA TYPE OF COURSE : Rerun | Core_Elective | PG/UG Department of Electronics & Communication Engineering COURSE DURATION : 12 weeks (26 Jul'21 - 15 Oct'21) IIT Roorkee EXAM DATE : 24 Oct 2021 INTENDED AUDIENCE : Any Interested Learners PRE-REQUISITES : First course on linear circuit analysis, A basic course on Semiconductor Devices and Digital Electronics. A course on Computer Organization will be also helpful (though not strictly required). INDUSTRIES APPLICABLE TO : Cadence; Synopsys; ST Microelectronics; NXP Semiconductors;Semiconductor Complex Limited; Design House in general COURSE OUTLINE : This course aligns with the core courses in Electronics Circuits taught to undergraduates in Electrical and Computer Engineering. The objective of this course is to develop the ability to analyse and design electronic circuits both analog and digital, discrete and integrated.The course starts with the basics of the device most seldom encountered in mixed designs and then go on to do circuit analysis in the later parts. ABOUT INSTRUCTOR : Prof. S. Dasgupta is presently working as an Associate Professor, in Microelectronics and VLSI Group of the Department of Electronics and Communication Engineering at Indian Institute of Technology, Roorkee. He received his PhD degree in Electronics Engineering from Institute of Technology-Banaras Hindu University (currently IIT-BHU), Varanasi in 2000. COURSE PLAN : Week 1 : Bipolar Junction Transistor; Physical Structure and Modes of operation,Operation in Active Mode, circuit symbols and conventions, BJT as an Amplifier, small circuit model, BJT as a switch and Ebers Moll Model, Simple BJT inverter and Second Order Effects Week 2 : MOS Transistor Basic,MOS Parasitic & SPICE Model; CMOS Inverter Basics-I Week 3 : CMOS Inverter Basics(contd), Power Analysis, SPICE Simulation-I Week 4 : Biasing of MOS Amplifier and its behavior as an analog switch, CMOS CS/CG/SF Amplifier Configuration, Internal cap models and high frequency modelling, JFET, structure and operation.