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The 11Th International Conference on Nitride Semiconductors (ICNS-11)

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The 11Th International Conference on Nitride Semiconductors (ICNS-11) August 31 Opening Remarks Room: Convention Hall No. 1 8:45 - 9: 00 August 31 Plenary Session Room: Convention Hall No. 1 9: 00 - 11:50 Chairs: Yasushi Nanishi and Yue Hao PL-1 (plenary) 9: 00 - 9: 50 Lighting the Earth by LEDs Hiroshi Amano: Nobel Prize Laureate Nagoya Univ, Japan PL-2 (plenary) 9: 50 - 10: 40 Developments of InGaN-based Double Hetero-Structure High Brightness Blue LEDs and Future Lighting Shuji Nakamura: Nobel Prize Laureate Universit of California, Santa Barbara, USA Coffee Break 10: 40 - 11: 00 PL-3 (plenary) 11: 00 - 11: 50 Understanding the Efficiency Limits and Inner Workings of GaN-Based LEDs James Speck Universit of California, Santa Barbara, USA Lunch 12:00 -13:30 August 31 Parallel Session A: Growth Session A1: GaN on Si Room: Convention Hall No. 2 -I 13:30 - 15:30 Chairs: SooJin Chua and Yang Liu MoGI1 (invited) 13:30 - 14:00 GaN-on-Si LEDs and Power Electronic Devices Colin Humphreys Department of Materials Science and Metallurgy, University of Cambridge, UK MoGI2 (invited) 14:00 - 14:30 GaN-on-Silicon for LED, Laser Diode, and HEMT Qian Sun1,2,3, Yu Zhou1,2, Jianping Liu1,2, Yong Cai1,2, Baoshun Zhang1,2, Liqun Zhang1,2, Deyao Li1,2, Shuming Zhang1,2, and Hui Yang1,2 1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences (CAS), Suzhou 215123, China 2Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, Suzhou 215123, China 3Lattice Power Corporation, China MoGO3 14:30 - 14:45 High Quality GaN and AlGaN/GaN HEMT Growth on Si Substrates Using Multiple Dislocation Filters Zhen Chen1,2, Mingbing Zhou1, Hanmin Zhao1, and Yi Pei2 1Lattice Power Corporation, Nanchang, Jiangxi, 330029 China 2GSR Ventures, Palo Alto, California, 94301 USA 3Gpower Semiconductor Incorporation, Suzhou, Jiangsu, China MoGO4 14:45 - 15:00 High Quality GaN Material Grown on Polycrystalline N-Polar AlN on Si (100) for Μ-LED Application Gautier Laval1, Thierry Baron2, Amélie Dussaigne1, Pierre Ferret1, Helge Haas1, Thierry Luciani2, Marie Panabière2, Nicolas Mante1 and Sylvain David2 1University of Grenoble Alpes, CEA, LETI, MINATEC campus, F-38054 Grenoble, France 2University of Grenoble Alpes, CNRS-LTM, F-38054 Grenoble, France MoGO5 15:00 - 15:15 Dislocation Reduction with Migration Enhanced Epitaxy AlN Buffer on 200mm GaN-on-Si Li Zhang1,2, Chieh-Chih Huang1, Abdul Kadir1, I Made Riko1, Kenneth E. Lee1, Eugene A. Fitzgerald1,3 and Soo Jin Chua1,2 1Singapore-MIT alliance for research and technology, Singapore 2NUS graduate school for integrative sciences and engineering, Singapore 3Massachusetts institute of technology, USA MoGO6 15:15 - 15:30 GaN Crystal Quality Improvement upon Reduction of SiC-On-Si Template Residual Stress Jessica Chai1, Glenn Walker1, Li Wang1, David Massoubre1 and Alan Iacopi1 1Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan 4111 QLD, Australia Coffee Break 15: 30 - 15:50 August 31 Parallel Session B: Basic Physics Session B1: InGaN QWs Room: Meeting Room 201 13:30 - 15:30 Chairs: Peter Parbrook and Shigefusa Chichibu MoBI1 (invited) 13:30 - 14:00 Multimode Mapping of III-Nitrides in the Scanning Electron Microscope R. W. Martin Department of Physics, SUPA, University of Strathclyde, Glasgow, United Kingdom MoBO2 14:00 - 14:15 Efficiency Droop in InGaN/GaN and GaN/AlGaN Quantum Wells: a Time Resolved-Photoluminescence Study Gwénolé Jacopin, Mehran Shahmohammadi, Wei Liu, Georg Rossbach, Lise Lahourcade, Jean-Daniel GaNière, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean, and Benoît Deveaud Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland MoBO3 14:15 - 14:30 Stress Relaxation in (0001) InGaN/GaN Heterostructures via V-Shape Dislocation Formation M. E. Rudinsky1, A. V. Lobanova1, N. Cherkashin2, A. F. Tsatsulnikov3, V. V. Lundin3, S. Yu. Karpov1, and E. V. Yakovlev1 1STR Group–Soft-Impact Ltd., St. Petersburg, Russia 2CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France 3A. F. Ioffe Institute RAS, 26 Plotekhnicheskaya str, 194021 St.Petersburg, Russia MoBO4 14:30 - 14:45 Impact of Random Alloy Fluctuations on the Excited Electron and Hole States in InGaN/GaN Quantum Wells S. Schulz1, C. Coughlan1,2, M. A. Caro1,2,3,4, D. Tanner1,2, and E. P. O’Reilly1,2 1Photonics Theory Group, Tyndall National Institute, University College Cork, Ireland 2Department of Physics, University College Cork, Ireland 3Department of Electrical Engineering and Automation, Aalto University, Espoo, Finland 4COMP Centre of Excellence in Computional Nanoscience, Aalto University, Espoo, Finland MoBO5 14:45 - 15:00 Internal Quantum Efficiency in Yellow-Amber Light Emitting AlGaN-GaInN-GaN Heterostructures Huong Thi Ngo1, Bernard Gil1, Benjamin Damilano2, K. Lekhal2, and P. De Mierry2 1Laboratoire Charles Coulomb – UMR 5221 -CNRS and University Montpellier – Case courier 074-34095 Montpellier Cedex 5- France 2CRHEA-CNRS Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications- Centre National de la Recherche Scientifiques - rue Bernard Gregory- 06560 Valbonne-France MoBO6 15:00 - 15:15 Improve Internal Quantum Efficiency of InGaN Multiple Quantum Wells by Nanomanipulation of V-Shape Pits Heng Li, Chiao-Yun Chang, Yang-Ta Shih, and Tien-Chang Lu Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan MoBO7 15:15 - 15:30 Self-Screening Effect to the Polarization-Induced Electric Field in the [0001] Oriented InGaN/GaN Light-Emitting Diodes Zi-Hui Zhang1, Wengang Bi1, Yonghui Zhang1, Xiao Wei Sun2 and Hilmi Volkan Demir2 1Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, 300401, P. R. China. 2LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore Coffee Break 15: 30 - 15:50 August 31 Parallel Session C: Optical Devices Session C1: LED Room: Convention Hall No. 2-II 13:30 - 15:30 Chairs: HaoChung Kuo and Okhyun Nam MoOI1 (invited) 13:30 - 14:00 High Efficiency Green/Yellow Emission of InGaN Structures on Overgrown Semi-Polar (11-22) GaN T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom MoOI2 (invited) 14:00 - 14:30 Research Progress on GaN-Based Optoelectronics Materials and Devices Jinmin Li State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China MoOO3 14:30 - 14:45 LEDs with a Highly Conductive, Narrow-Band Distributed Bragg Reflector Christoph Berger1, Gordon Schmidt1, Stephanie Fritze2, Armin Dadgar1, Jürgen BläSiNg1, Peter Veit1, Jürgen Christen1, and André Strittmatter1 1Institute of Experimental Physics, Dept. Semiconductor epitaxy, Otto-von-Guericke-University Magdeburg, PO box 4120, 39106 Magdeburg, Germany 2LayTec AG, Seesener Str. 10-13, 10709 Berlin, Germany MoOO4 14:45 - 15:00 High Power InGaN Blue Wafer-Level Light Emitting Diodes (WL-LED) with 305 W Light Output Power Yibin Zhang1,2, Mingdi Ding1,3, Jianwei Xu1,3, Desheng Zhao1, Hongjuan Huang1, Fei Xu1,4,Yong Cai1,*, Guojun Lu5, Zhenlin Miao5, Yundong Qi5, Baoshun Zhang1 and Hui Yang1 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China; 2Graduate University of the Chinese Academy of Sciences, Beijing,China; 3The Nano Scienceand Technology Institute,USTC, Suzhou, China; 4School of software and microelectronics at Wuxi,Peking University, Wuxi, China; 5Xiangeng HuaLei Optoelectronic Co. Ltd, Chenzhou, Hunan, People’s Republic of China. MoOO5 15:00 - 15:15 Fabrication and Characterization of Large-Area High Voltage LEDs with 2 Micron Gap Yuefei Cai1, Xinbo Zou1,2, Wing Cheung Chong1, and Kei May Lau1,2,* 1Department of Electronic and Computer Engineering, HKUST, Hong Kong 2HKUST Jockey Club Institute for Advanced Study, HKUST, Hong Kong MoOO6 15:15 - 15:30 Fabrication of Multi-Junction LEDs for High-Power Drive Using GaN-on-Si Technologies Jumpei Tajima, Hiroshi Ono, Toshihide Ito, Kenjiro Uesugi, Shinya Nunoue Corporate Research & Development Center, Toshiba Corporation, Japan Coffee Break 15: 30 - 15:50 August 31 Parallel Session D: Electronic Devices Session D1: HEMTs for Microwave Application Room: Convention Hall No. 2-III 13:30 - 15:30 Chairs: Tomas Palacios and Kevin J. Chen MoEI1 (invited) 13:30 - 14:00 Exploring Polarization for GaN Power Electronic Huili(Grace) Xing Cornell Univ, USA MoEI2 (Cancelled) 14:00 - 14:30 MoEO2 14:15 - 14:30 Over 10A Operation Normally-On AlGaN/AlN/GaN HFETs on Sapphire Substrate Junda Yan1, Quan Wang1,2, Hongling Xiao1, Chun Feng1, Wei Li1, Jiamin Gong2, Bo Zhang2, Baiquan Li4, Xiaoliang Wang1,3, Zhanguo Wang3 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, People’s Republic of China 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China 4Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036, People’s Republic of China MoEO3 14:30 - 14:45 Impact of Nitride and Oxide Gas Plasma Exposure on the Interface Properties of AlGaN/GaN MIS-HEMTs with AlN
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