August 31 Opening Remarks Room: Convention Hall No. 1 8:45 - 9: 00
August 31 Plenary Session Room: Convention Hall No. 1 9: 00 - 11:50 Chairs: Yasushi Nanishi and Yue Hao
PL-1 (plenary) 9: 00 - 9: 50 Lighting the Earth by LEDs Hiroshi Amano: Nobel Prize Laureate Nagoya Univ, Japan PL-2 (plenary) 9: 50 - 10: 40 Developments of InGaN-based Double Hetero-Structure High Brightness Blue LEDs and Future Lighting
Shuji Nakamura: Nobel Prize Laureate
Universit of California, Santa Barbara, USA
Coffee Break 10: 40 - 11: 00
PL-3 (plenary) 11: 00 - 11: 50 Understanding the Efficiency Limits and Inner Workings of GaN-Based LEDs James Speck Universit of California, Santa Barbara, USA
Lunch 12:00 -13:30
August 31 Parallel Session A: Growth Session A1: GaN on Si Room: Convention Hall No. 2 -I 13:30 - 15:30 Chairs: SooJin Chua and Yang Liu
MoGI1 (invited) 13:30 - 14:00 GaN-on-Si LEDs and Power Electronic Devices Colin Humphreys Department of Materials Science and Metallurgy, University of Cambridge, UK MoGI2 (invited) 14:00 - 14:30 GaN-on-Silicon for LED, Laser Diode, and HEMT Qian Sun1,2,3, Yu Zhou1,2, Jianping Liu1,2, Yong Cai1,2, Baoshun Zhang1,2, Liqun Zhang1,2, Deyao Li1,2, Shuming Zhang1,2, and Hui Yang1,2 1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences (CAS), Suzhou 215123, China 2Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, Suzhou 215123, China 3Lattice Power Corporation, China MoGO3 14:30 - 14:45 High Quality GaN and AlGaN/GaN HEMT Growth on Si Substrates Using Multiple Dislocation Filters Zhen Chen1,2, Mingbing Zhou1, Hanmin Zhao1, and Yi Pei2 1Lattice Power Corporation, Nanchang, Jiangxi, 330029 China 2GSR Ventures, Palo Alto, California, 94301 USA 3Gpower Semiconductor Incorporation, Suzhou, Jiangsu, China MoGO4 14:45 - 15:00 High Quality GaN Material Grown on Polycrystalline N-Polar AlN on Si (100) for Μ-LED Application Gautier Laval1, Thierry Baron2, Amélie Dussaigne1, Pierre Ferret1, Helge Haas1, Thierry Luciani2, Marie Panabière2, Nicolas Mante1 and Sylvain David2 1University of Grenoble Alpes, CEA, LETI, MINATEC campus, F-38054 Grenoble, France 2University of Grenoble Alpes, CNRS-LTM, F-38054 Grenoble, France MoGO5 15:00 - 15:15 Dislocation Reduction with Migration Enhanced Epitaxy AlN Buffer on 200mm GaN-on-Si Li Zhang1,2, Chieh-Chih Huang1, Abdul Kadir1, I Made Riko1, Kenneth E. Lee1, Eugene A. Fitzgerald1,3 and Soo Jin Chua1,2 1Singapore-MIT alliance for research and technology, Singapore 2NUS graduate school for integrative sciences and engineering, Singapore 3Massachusetts institute of technology, USA MoGO6 15:15 - 15:30 GaN Crystal Quality Improvement upon Reduction of SiC-On-Si Template Residual Stress Jessica Chai1, Glenn Walker1, Li Wang1, David Massoubre1 and Alan Iacopi1 1Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan 4111 QLD, Australia
Coffee Break 15: 30 - 15:50
August 31 Parallel Session B: Basic Physics Session B1: InGaN QWs Room: Meeting Room 201 13:30 - 15:30 Chairs: Peter Parbrook and Shigefusa Chichibu
MoBI1 (invited) 13:30 - 14:00 Multimode Mapping of III-Nitrides in the Scanning Electron Microscope R. W. Martin Department of Physics, SUPA, University of Strathclyde, Glasgow, United Kingdom MoBO2 14:00 - 14:15 Efficiency Droop in InGaN/GaN and GaN/AlGaN Quantum Wells: a Time Resolved-Photoluminescence Study Gwénolé Jacopin, Mehran Shahmohammadi, Wei Liu, Georg Rossbach, Lise Lahourcade, Jean-Daniel GaNière, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean, and Benoît Deveaud Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland MoBO3 14:15 - 14:30 Stress Relaxation in (0001) InGaN/GaN Heterostructures via V-Shape Dislocation Formation M. E. Rudinsky1, A. V. Lobanova1, N. Cherkashin2, A. F. Tsatsulnikov3, V. V. Lundin3, S. Yu. Karpov1, and E. V. Yakovlev1 1STR Group–Soft-Impact Ltd., St. Petersburg, Russia 2CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France 3A. F. Ioffe Institute RAS, 26 Plotekhnicheskaya str, 194021 St.Petersburg, Russia MoBO4 14:30 - 14:45 Impact of Random Alloy Fluctuations on the Excited Electron and Hole States in InGaN/GaN Quantum Wells S. Schulz1, C. Coughlan1,2, M. A. Caro1,2,3,4, D. Tanner1,2, and E. P. O’Reilly1,2 1Photonics Theory Group, Tyndall National Institute, University College Cork, Ireland 2Department of Physics, University College Cork, Ireland 3Department of Electrical Engineering and Automation, Aalto University, Espoo, Finland 4COMP Centre of Excellence in Computional Nanoscience, Aalto University, Espoo, Finland MoBO5 14:45 - 15:00 Internal Quantum Efficiency in Yellow-Amber Light Emitting AlGaN-GaInN-GaN Heterostructures Huong Thi Ngo1, Bernard Gil1, Benjamin Damilano2, K. Lekhal2, and P. De Mierry2 1Laboratoire Charles Coulomb – UMR 5221 -CNRS and University Montpellier – Case courier 074-34095 Montpellier Cedex 5- France 2CRHEA-CNRS Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications- Centre National de la Recherche Scientifiques - rue Bernard Gregory- 06560 Valbonne-France MoBO6 15:00 - 15:15 Improve Internal Quantum Efficiency of InGaN Multiple Quantum Wells by Nanomanipulation of V-Shape Pits Heng Li, Chiao-Yun Chang, Yang-Ta Shih, and Tien-Chang Lu Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan MoBO7 15:15 - 15:30 Self-Screening Effect to the Polarization-Induced Electric Field in the [0001] Oriented InGaN/GaN Light-Emitting Diodes Zi-Hui Zhang1, Wengang Bi1, Yonghui Zhang1, Xiao Wei Sun2 and Hilmi Volkan Demir2
1Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, 300401, P. R. China. 2LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
Coffee Break 15: 30 - 15:50
August 31 Parallel Session C: Optical Devices Session C1: LED Room: Convention Hall No. 2-II 13:30 - 15:30 Chairs: HaoChung Kuo and Okhyun Nam
MoOI1 (invited) 13:30 - 14:00 High Efficiency Green/Yellow Emission of InGaN Structures on Overgrown Semi-Polar (11-22) GaN T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom MoOI2 (invited) 14:00 - 14:30 Research Progress on GaN-Based Optoelectronics Materials and Devices Jinmin Li State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China MoOO3 14:30 - 14:45 LEDs with a Highly Conductive, Narrow-Band Distributed Bragg Reflector Christoph Berger1, Gordon Schmidt1, Stephanie Fritze2, Armin Dadgar1, Jürgen BläSiNg1, Peter Veit1, Jürgen Christen1, and André Strittmatter1 1Institute of Experimental Physics, Dept. Semiconductor epitaxy, Otto-von-Guericke-University Magdeburg, PO box 4120, 39106 Magdeburg, Germany 2LayTec AG, Seesener Str. 10-13, 10709 Berlin, Germany MoOO4 14:45 - 15:00 High Power InGaN Blue Wafer-Level Light Emitting Diodes (WL-LED) with 305 W Light Output Power Yibin Zhang1,2, Mingdi Ding1,3, Jianwei Xu1,3, Desheng Zhao1, Hongjuan Huang1, Fei Xu1,4,Yong Cai1,*, Guojun Lu5, Zhenlin Miao5, Yundong Qi5, Baoshun Zhang1 and Hui Yang1 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China; 2Graduate University of the Chinese Academy of Sciences, Beijing,China; 3The Nano Scienceand Technology Institute,USTC, Suzhou, China; 4School of software and microelectronics at Wuxi,Peking University, Wuxi, China; 5Xiangeng HuaLei Optoelectronic Co. Ltd, Chenzhou, Hunan, People’s Republic of China. MoOO5 15:00 - 15:15 Fabrication and Characterization of Large-Area High Voltage LEDs with 2 Micron Gap Yuefei Cai1, Xinbo Zou1,2, Wing Cheung Chong1, and Kei May Lau1,2,* 1Department of Electronic and Computer Engineering, HKUST, Hong Kong 2HKUST Jockey Club Institute for Advanced Study, HKUST, Hong Kong MoOO6 15:15 - 15:30 Fabrication of Multi-Junction LEDs for High-Power Drive Using GaN-on-Si Technologies Jumpei Tajima, Hiroshi Ono, Toshihide Ito, Kenjiro Uesugi, Shinya Nunoue Corporate Research & Development Center, Toshiba Corporation, Japan
Coffee Break 15: 30 - 15:50
August 31 Parallel Session D: Electronic Devices Session D1: HEMTs for Microwave Application Room: Convention Hall No. 2-III 13:30 - 15:30 Chairs: Tomas Palacios and Kevin J. Chen
MoEI1 (invited) 13:30 - 14:00 Exploring Polarization for GaN Power Electronic Huili(Grace) Xing Cornell Univ, USA MoEI2 (Cancelled) 14:00 - 14:30
MoEO2 14:15 - 14:30 Over 10A Operation Normally-On AlGaN/AlN/GaN HFETs on Sapphire Substrate Junda Yan1, Quan Wang1,2, Hongling Xiao1, Chun Feng1, Wei Li1, Jiamin Gong2, Bo Zhang2, Baiquan Li4, Xiaoliang Wang1,3, Zhanguo Wang3 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, People’s Republic of China 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China 4Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036, People’s Republic of China
MoEO3 14:30 - 14:45 Impact of Nitride and Oxide Gas Plasma Exposure on the Interface Properties of AlGaN/GaN MIS-HEMTs with AlN Gate Dielectrics Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yong Xie, and Yue Hao School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China MoEO4 14:45 - 15:00
Investigations of Atomic Layer Deposition Process on the Performance of Al2O3-MIS-HEMTs Annett Winzer1, Martin Schuster1, Rico Hentschel1, Nadine Szabó1, Andre Wachowiak1 and Thomas Mikolajick1,2 1Namlab GmbH, 01187 Dresden, Germany 2Institut für Halbleiter und Mikrosystemtechnik, Technische Universität Dresden, 01062 Dresden, Germany MoEO5 15:00 - 15:15 Integrated Enhancement Mode Vertical GaN Nano-Pillar MOSFETs with Wrap Gate Feng Yu, Doris Rümmler, Jana Hartmann, Lorenzo Caccamo, Juliane Arens, Alaaeldin-Gad, Johannes LEDig, Andrey Bakin, Hao Shen, Hergo-Heinrich Wehmann, Andreas Waag Technische Universität Braunschweig, Institut für Halbleitertechnik, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany and Laboratory for Emerging Nanometrology and Analytics, Braunschweig, Germany MoEO6 15:15 - 15:30
Control of Threshold Voltage in Ultrathin-Barrier AlGaN/GaN Based MISHEMTs with Low-Frequency SiNx Gate
Dielectric and Al2O3 Interfacial Layer Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong
Coffee Break 15: 30 - 15:50
August 31 Parallel Session A: Growth Session A2: GaN on Si Room: Convention Hall No. 2 -I 15:50 – 17:50 Chairs: Colin Humphreys and Feng Yun
MoGI7 (invited) 15:50 - 16:20 GaN Engineering for Vertical Integration with 200mm Si S. J. Chua1,2,4, L. Zhang1, A. Kadir1, C.C. Huang1, X. S. Nguyen1, K. H. Lee1, K. E. Lee1, E. A. Fitzgerald1,3 1Low Energy Electronic system IRG, Singapore MIT Alliance for Research and Technology Centre, Singapore 2Department of Electrical and Computer Engineering, NUS, Singapore 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, USA 4Institute of Materials Research and Engineering, Singapore MoGO8 16:20 - 16:35 High Mobility AlGaN/GaN Heterostructures Grown on Si Substrates Using a Large Lattice-Mismatch Induced Stress Control Technology Jianpeng Cheng1, Xuelin Yang1, Ling Sang1, Lei Guo1, Anqi Hu1, Fujun Xu1, Ning Tang1, Xinqiang Wang1,2, and Bo Shen1,2 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2Collaborative Innovation Center of Quantum Matter, Beijing 100871, China MoGO9 16:35 - 16:50 Self-Generated Micro-Cracks in Ultra-Thin AlN/GaN Superlattice and Their Influences to the GaN Epilayer Growth on Si (110) Substrates by MOCVD X.Q. Shen1, T. Takahashi1, T. Ide1, X. Rong2, X.Q.Wang2, B. Shen2 and M. Shimizu1 1National Institute of Advanced Industrial Science and Technology (AIST), Japan 2School of Physics, Peking University, China MoGO10 16:50 - 17:05 Nanoheteroepitaxy of GaN on Nano-Patterned AlN/Si Substrate Donghyun Lee1, In-Su Shin1, Jin Lu1, Donghyun Kim2, Yongjo Park3, and Euijoon Yoon1,3 1Dept. of Materials Science and Engineering, Seoul National University, Korea 2Korea Advanced Nano-Fab Center, Korea 3Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Korea MoGO11 17:05 - 17:20 Impact of Growth Conditions on Stress and Quality of Aluminum Nitride Thin Buffer Layers for Gallium Nitride MOCVD Epitaxy Andrea Severino1, Nicolò Piluso1, Simona Lorenti1, Ferdinando Iucolano1, Alfonso Patti1, Cinzia Marcellino1, Salvatore Coffa1 1IPD R&D Group, STMicroelectronics, Stradale Primosole 50, Catania, Italy MoGO12 17:20 - 17:35 A Novel MOCVD Showerhead and Its Growth Results Wenqing Fang, Changda Zheng, Zhijue Quan, Jianli Zhang, Xiaolan Wang, Xiaoming Wu, Sheng Cao, Chunlan Mo and Fengyi Jiang
The National Engineering Technology Research Center for LED on Si Substrate,Nanchang University, China MoGO13 17:35 - 17:50 High-Efficiency Vertical-Injection LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers
Xinbo Zou1,2, Xu Zhang1, Wing Cheung Chong1, and Kei May Lau1,2,*
1Department of Electronic and Computer Engineering, HKUST, Hong Kong
2HKUST Jockey Club Institute for Advanced Study, HKUST, Hong Kong
August 31 Parallel Session B: Basic Physics Session B2: AlGaN QWs Room: Meeting Room 201 15:50 – 17:50 Chairs: Hideto Miyake and Degang Zhao
MoBI8 (invited) 15:50 - 16:20 Control of Radiative Recombination Rate and Polarization Degree in Nitride-Based Semiconductors Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan MoBI9 (invited) 16:20 - 16:50 Overcoming the Fundamental Limitation in Light-Extraction Efficiency of Deep Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant Emission Jong Won Lee1, Jun Hyuk Park1, Dong Yeong Kim1, Jungsub Kim2, Yong-Il Kim2, Youngsoo Park2, E. Fred Schubert3 and Jong Kyu Kim1 1Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea 2LED BuSiNess, Samsung Electronics, Yongin 446-920, Korea 3Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 USA MoBO10 16:50 - 17:05 Impact of Design on Optical Polarization of AlGaN-Based Multiple Quantum Well UVC-LEDs Christoph Reich1, Martin Feneberg2, Martin Guttmann1, Tim Wernicke1, Frank Mehnke1, Rüdiger Goldhahn2, and Michael Kneissl1 1Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany 2Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Germany MoBO11 17:05 - 17:20 Influence of Temperature and Carrier Localization on Efficiency Droop in AlGaN Epitaxial Layers and Multiple Quantum Wells J. Mickevičius1, J. Jurkevičius1, A. Kadys1, G. Tamulaitis1, M. Shur2, M. Shatalov3, J. Yang3, and R. Gaska3 1Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Lithuania 2Department of ECE and CIE, Rensselaer Polytechnic Institute, USA 3Sensor Electronic Technology, Inc., USA MoBO12 17:20 - 17:35 Dominant Nonradiative Recombination Paths in Al-Rich AlGaN Related Structures Shuhei Ichikawa1, Mitsuru Funato1, Yosuke Iwasaki2, and Yoichi Kawakami1 1Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan 2JFE Mineral Co. Ltd., Chiba 260-0826, Japan MoBO13 17:35 - 17:50
Exciton Recombination in Spontaneously Formed and Artificial Quantum Wells AlxGa1-xN/AlyGa1-yN (x August 31 Parallel Session C: Optical Devices Session C2: LED Room: Convention Hall No. 2-II 15:50 – 17:50 Chairs: ChihChung Yang and Ferdinand Scholz MoOI7 (invited) 15:50 - 16:20 Ultra High Power LEDs Joachim Hertkorn OSRAM Opto Semiconductors GmbH MoOI8 (invited) 16:20 - 16:50 Progress of GaN Based Light-Emitting Diodes on Grid Patterned Silicon Fengyi Jiang, Junlin Liu, GuangxuWang, Jianli Zhang, ChunlanMo, XiaolanWang, ZhijueQuan National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330047, China MoOO9 16:50 - 17:05 Investigations of the InGaN-Based Green Light-Emitting Diodes on Flexible Polyimide Films Ray-Hua Horng1, Keng-Chen Liu1, Ching-Ho Tien2, and Dong-Sing Wuu2 1Graduate Institute of Precision Engineering, National Chung HSing University, Taiwan 2Department of Materials Science and Engineering, National Chung HSing University, Taiwan MoOO10 17:05 - 17:20 Structural and Opto-Electrical Properties of Graphene-Electrode InGaN/GaN LEDs Bin Liu*, Caichuan Wu, Zhe Zhuang, Jiangping Dai, Tao Tao, Guogang Zhang, Hong Zhao, Zili Xie, Rong Zhang Jiangsu Provincial Key Laboratory of Advanced photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China MoOO11 17:20 - 17:35 Photo-Electro-Vibrational-Thermal Characterization of Epi-Flexible GaN Light-Emitting Diode Y.F. Cheung, K. H. Li, J.A. Huang and H.W. Choi Department of Electrical and Electronics Engineering, The University of Hong Kong MoOO12 17:35 - 17:50 Multi-Layer Graphene Electrodes for (Al, In)GaN-Based Visible and UV Light Emitting Diodes L. Sulmoni1, M. A. Gluba2, N. H. Nickel2, M. Lapeyrade3, S. Einfeldt3, V. Hoffmann3, T. Wernicke1 and M. Kneissl1 1Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany 2Institut fur Silizium-Photovoltaik, Helmholtz-Zentrum für Materialien und Energie, Berlin, Germany 3Ferdinand-Braun-Institut, Leibniz-Institut für Hochstfrequenztechnik, Berlin, Germany August 31 Parallel Session D: Electronic Devices Session D2: HEMTs for Power Switch Room: Convention Hall No. 2-III 15:50 – 17:50 Chairs: Debdeep Jena and Hai Lu MoEI7 (invited) 15:50 - 16:20 Gallium Nitride: the Next Si of Power Electronics Tomás Palacios Massachusetts Institute of Technology, USA MoEO8 16:20 - 16:35 AlGaN/GaN HEMT on n-GaN Substrate with off-State Breakdown Voltage Over 2 kV Shinichi Tanabe1, Noriyuki Watanabe1, Masahiro Uchida2, and HideakiMatsuzaki1 1NTT Device Technology Laboratories, NTT Corporation, Japan 2NTT Advanced Technology Corporation, Japan MoEO9 16:35 - 16:50 Off-State Electrical Breakdown of AlGaN/AlN/GaN/Ga(Al)N HEMT Heterostructure Shuiming Li1,2,3, Yu Zhou1,2, Hongwei Gao1,2, Shujun Dai1,2, Guohao Yu1,2, Kai Fu1,2, Qian Sun*1,2, Yong Cai1,2, Baoshun Zhang1,2, Sheng Liu3,4, and Hui Yang1,2 1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences (CAS), Suzhou 215123, China 2Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China 3School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China 4School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China MoEO10 16:50 - 17:05 3.2 mΩcm2 Enhancement-Mode GaN MOSFETs with Breakdown Voltage of 800 V Hisashi Saito, Miki Yumoto, Shigeto Fukatsu, Yosuke Kajiwara, Aya Shindome, Kohei Oasa*, Yoshiharu Takada*, Kunio Tsuda*, and Masahiko Kuraguchi Corporate Research & Development Center, Toshiba Corporation MoEO11 17:05 - 17:20 Improved Breakdown Voltage and Ft & Fmax GaN HEMT with a Source-Connected Air-Bridge Self-Aligned Recess Field Plate Feihang Liu, Mengjie Zhou, Xi Song, ChenggongYin, HuiZhang, Yi Pei, Naiqian Zhang, Dynax Semiconductor Inc. Suzhou, China MoEO12 17:20 - 17:35 The Suppression of Background Doping in Selective Area Growth Technique for High Performance Normally-off AlGaN/GaN MOSFET Fan Yang1, Yao Yao1, Zhiyuan He1, Guilin Zhou1, Yue Zheng1, Liang He1, Jincheng Zhang1, Yiqiang Ni1, Deqiu Zhou1, Zhen Shen1, Jian Zhong1, Zhisheng Wu1,3, Baijun Zhang1,3*, and Yang Liu1,2* 1School of Physics and Engineering, 2Institute of Power Electronics and Control Technology, 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, 510275 Guangzhou, People’s Republic of China MoEO13 17:35 - 17:50 Study of Deep Ultra Violet Optical Property of AlGaN/GaN 2DEG Heterostructures Zhiqiang Li, Chris Raymond, Torsten Stoll, David Doyle Nanometrics 1320 SE Armour Dr. Ste.B2 Bend OR 97702 U.S.A September 1 Parallel Session A: Growth Session A3: Bulk GaN Growth Room: Convention Hall No. 2 - I 8:30 –10:00 Chairs: Robert Dwilinski and Jaime Freitas TuGI1 (invited) 8:30 - 9:00 Challenges and Future Perspectives in HVPE-GaN Growth on Ammonothermal GaN Seeds M. Bockowski1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142, Warsaw, Poland 2TopGaN Sp. z o.o., Sokolowska 29/37, 01-142, Warsaw, Poland TuGO2 9:00 - 9:15 Growth of Free-Standing m-Plane GaN Using Hydride Vapor Phase Epitaxy Seohwi Woo1, Daehong Min1, Sangil Lee1, Uiho Choi1, Hyunjae Lee2, Dongjun Shin2, Daewoo Choi2, Jaiyong Han2 and Okhyun Nam1* 1Convergence Center for Advanced Nano Semiconductor, Korea Polytechnic University, Korea 2Lumistal Inc., BuSiNess Incubation Center, Korea TuGO3 9:15 - 9:30 New Design of Nozzle Structure and Its Effect for 4-inch GaN Wafer Preparation Yutian Cheng1, Peng Liu2, Jiejun Wu1*, Tongjun Yu1*, Guoyi Zhang1,2 1Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China 2Sino Nitride Semiconductor CO., LTD, Dongguan 523500, P. R. China TuGO4 9:30 - 9:45 HVPE Growth of GaN Doped with Silicon Pawel Kempisty1, Tomasz Sochacki1,2, Mikolaj Amilusik1,2, Michal Fijalkowski1,2, Boleslaw Lucznik1,2, Jan Weyher1, Grzegorz Kamler1, Malgorzata Iwinska1, Elzbieta Litwin-Staszewska1, Alexander Khapuridze1, Izabella Grzegory1, and Michal Bockowski1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw, Poland TuGO5 9:45 - 10:00 HVPE-GaN Growth on GaN-Based Advanced Substrates by Smart Cut™ Malgorzata Iwinska1, Mikolaj Amilusik1,2, Michal Fijalkowski1, Tomasz Sochacki1,2, Boleslaw Lucznik1,2, Anna Nowakowska-Siwinska2, Izabella Grzegory1, Pascal Guenard3, Raphael Caulmilone3, Martin Seiss4, Tobias Mrotzek4, and Michal Bockowski1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2TopGaN Sp z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland 3Soitec, Parc Technologique des Fontaines, 38190 Bernin, France 4PLANSEE SE, 6600 Reutte, Austria Coffee Break 10: 00 - 10:20 September 1 Parallel Session B: Basic Physics Session B3: InAlN Room: Meeting Room 201 8:30 –10:00 Chairs: Bruno Daudin and Xiaoliang Wang TuBI1 (invited) 8:30 - 9:00 Properties and Development of AlInN/GaN Structures Near Lattice-Matching for Photonics and Electronics Jean François Carlin Ecole Polytechnique Fédérale de Lausanne CH-1015 Lausanne Switzerland TuBO2 9:00 - 9:15 InAlN Band-Gap and Bowing Parameter across Full Composition Range Vitaly Z. Zubialevich1, Shahab N. Alam1,2, Duc V. Dinh1, and Peter J. Parbrook1,2 1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University College Cork, Cork, Ireland TuBO3 9:15 - 9:30 Systematic Study of Photoluminescence Properties of Nearly Lattice Matched GaN/InAlN Single Quantum Wells Gediminas Liaugaudas1, Gwénolé Jacopin1, Jean-François Carlin1, Raphaël Butté1 and Nicolas Grandjean1 1Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland TuBO4 9:30 - 9:45 Photocapacitance Spectroscopy of InAlN Nearly Lattice-Matched to GaN L. Lugani, M. A. Py, J.-F. Carlin, and N. Grandjean Institute of Condensed Matter Physics (ICMP), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland TuBO5 9:45 - 10:00 Time-Resolved and Spatially-Resolved Luminescence Studies on Ultraviolet to Green Luminescence Peaks of m-Plane Al1-XInxN Epilayers Grown on a Low Defect Density m-Plane GaN Substrate S. F. Chichibu1, K. Kojima1, Y. Yamazaki1, K. Furusawa1, H. Ikeda2, and K. Fujito2 1IMRAM-Tohoku University, Japan 2Mitsubishi Chemical Corporation, Japan Coffee Break 10: 00 - 10:20 September 1 Parallel Session C: Optical Devices Session C3: LED Room: Convention Hall No. 2 -II 8:30 –10:00 Chairs: Jimin Li and Martin D. Dawson TuOI1 (invited) 8:30 - 9:00 Nanostructured Light-Emitting Diodes Charng-GaN Tu, Che-Hao Liao, Yu-Feng Yao, Chia-Ying Su, Chieh Hsieh, Chun-Han Lin, Hao- Tsung Chen, Yean-Woei Kiang, and C. C. Yang* Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan TuOO2 9:00 - 9:15 Impact of Underlayers on Optical and Electronic Properties of Blue-Emitting InGaN/GaN LEDs J. Bruckbauer1*, M. J. Wallace1, A. Howley1, P. R. Edwards1, M. J. Kappers2, M. A. Hopkins3, D. W. E. Allsopp3, R. A. Oliver2, C. J. Humphreys2 and R. W. Martin1 1Department of Physics, SUPA, University of Strathclyde, Glasgow, United Kingdom 2Department of Materials and Metallurgy, University of Cambridge, Cambridge, United Kingdom 3Department of Electronic and Electrical Engineering, University of Bath, Bath, United Kingdom TuOO3 9:15 - 9:30 Enhanced Optical Output Performance in InGaN/GaN Blue Light-Emitting Diode Embedded with SiO2 Nanoparticles Han-Su Cho1, Kang-Bin Bae1, Jong-Hyeob Baek2, Alexander Y. Polyakov3, and In-Hwan Lee1 1School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju, Chonbuk 561-756, Korea 2Photonics Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Korea 3Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISiS, Moscow, Russia TuOO4 9:30 - 9:45 The Effects of Efficiency Droop of GaN-Based LEDs on the Performance of OFDM Visible Light Communication System Huimin Lu1, Tongjun Yu2, Chuanyu Jia2, Yini Zhang1, Jianping Wang1, Guoyi Zhang1 1School of Computer and Communication Engineering, University of Science and Technology Beijing, China 2The State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, China TuOO5 9:45 - 10:00 Enhanced Modulation Bandwidth of GaN-based Light-Emitting Diode by Surface Plasmons Shi-Chao Zhu, Zhi-Guo Yu, Li-Xia Zhao*, Lei Liu, Chao Yang, Jun-Xi Wang and Jin-Min Li Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Coffee Break 10: 00 - 10:20 September 1 Parallel Session D: Electronic Devices Session D3: Reliability of HEMTs Room: Convention Hall No. 2-III 8:30 –10:00 Chairs: Naiqian Zhang and Xinyu Liu TuEI1 (invited) 8:30 - 9:00 Reliability and Parasitic Issues in GaN-Based Power HEMTs Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni University of Padova, Dept. of Information Engineering, via Gradenigo 6B, 35131 Padova – ITALY TuEO2 9:00 - 9:15 Decoupling of Epitaxy Related Trapping Effects in AlGaN/GaN MIS-HEMTs Martin Huber1,2, Gianmauro Pozzovivo1, Ingo Daumiller1, Gilberto Curatola1, Lauri Knuuttila1, Marco Silvestri1, Alberta Bonanni2, and Anders Lundskog1 1In_neon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria 2Johannes Kepler University, Institute of Semiconductor and Solid State Physics, Altenbergerstrasse 69, A-4040 Linz, Austria TuEO3 9:15 - 9:30 Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias M J Uren1, M Caesar1, S Karboyan1, I Chatterjee1, M Meneghini2, G Meneghesso2, E Zanoni2, P Moens3, P Vanmeerbeek3, and M Kuball1 1CDTR, H H Wills Physics Laboratory, University of Bristol, United Kingdom 2DIE, University of Padova, Italy 3ON Semiconductor, Oudenaarde, Belgium TuEO4 9:30 - 9:45 Investigation of Trapping Effects on Au-Free AlGaN/GaN Schottky Diodes Fabricated on C-Doped Buffer Layers Jie Hu1,2, Steve Stoffels2, Silvia Lenci2, Shuzhen You2, Benoit Bakeroot2,3, Nicol`o Ronchi2, Rafael Venegas2, Guido Groeseneken1,2, and Stefaan Decoutere2 1Department of Electrical Engineering (ESAT), KU LeUVen, 3001 LeUVen, Belgium 2imec, Kapeldreef 75, 3001 LeUVen, Belgium 3Centre for Microsystems Technology (CMST), imec and Ghent University, Technologiepark 914a, 9052 Gent, Belgium TuEO5 9:45 - 10:00 Gated van der Pauw Measurements: a Powerful Tool for Probing Electron Trapping Effects in AlGaN/GaN HEMT Structures Shlomo Mehari1, Arkady Gavrilov1, Moshe Eizenberg2, and Dan Ritter1 1Dept. of Electrical Engineering, Technion- Israel Institute of Technology, Haifa 32000, Israel 2Dept. of Materials Science and Engineering, Technion- Israel Institute of Technology, Haifa 32000, Israel Coffee Break 10: 00 - 10:20 September 1 Parallel Session A: Growth Session A4: Bulk GaN Growth Room: Convention Hall No. 2-I 10:20 –11:50 Chairs: Michal S. Bockowski and Ke Xu TuGI6 (invited) 10:20 - 10:50 HVPE GaN Wafers with Dramatically Improved Crystalline and Electrical Properties Jaime A. Freitas Jr.1, James C. Culbertson1, Nadeemullah A. Mahadik1, Tomasz Sochacki2, and Michal S. Bockowski2,3 1Naval Research Laboratory, 4555 Overlook Av. SW, Washington, USA 20375 2INIPRESS - Institute of High Pressure, Sokolowska 29/37, 01-142 Warsaw, Poland 3TopGaN Ltd., 01-142 Warsaw, Poland TuGO7 10:50 - 11:05 Ammonothermal Bulk GaN: Process, Properties, and Validation M. P. D’Evelyn1, W. Jiang1, J. Cook1, D. S. Kamber1, R. T. Pakalapati1, D. Ehrentraut1, R. B Simon2, J. Anaya2, M. Kuball,2, T. Heikkinen3, F. Tuomisto3, C. A. Hurni4, M. D. Craven4, T. Prunty5, O Aktas5, X. Xin5, and I. C. Kizilyalli5 1Soraa, Inc., Goleta, California 93117, USA 2H H Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK 3Department of Applied Physics, Aalto University, FI-00076 Aalto Espoo, Finland 4Soraa, Inc., Fremont, California 94555, USA 5Avogy, Inc., San Jose, California 95134, USA TuGO8 11:05 - 11:20 Ammonothermal Growth of GaN on HVPE Seeds Prepared with the Use of Ammonothermal GaN Crystals R. Kucharski1, M. Zając1, T. Sochacki2,3, M. Iwińska2, J.L. Weyher2, M. Boćkowski2,3, J. Serafińczuk4, R. Kudrawiec5 1AMMONO S.A., Prusa 2, 00-493 Warsaw, Poland 2TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw, Poland 3Insitute of High Pressure Physics, Polish Academy of Science, Sokołowska 29/37, 01-142 Warsaw, Poland 4Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology Janiszewskiego 11/17, 50-372 Wrocław, Poland 5Institute of Physics, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland TuGO9 11:20 - 11:35 Hydride Vapor Phase Epitaxy Growth for Low-Dislocation Density and 4 inch GaN Substrates Jianfeng Wang1,2, Guoqiang Ren1, Yu Xu1, Demin Cai2, Mingyue Wang1, Yuming Zhang1, Xiaojian Hu2, and Ke Xu1,2* 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China 2Suzhou Nanowin Science and Technology Co. Ltd., Suzhou Industry Park, China TuGO10 11:35 - 11:50 High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method M. Saito1,2, Q. Bao1,3, K. Kurimoto1,3, D. Tomida1, K. Kojima1, Y. Yamazaki1, Y. Kagamitani2, R. Kayano3, T. Ishiguro1 and S. F. Chichibu1 1IMRAM-Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan 2Mitsubishi Chemical Corp., 1000 Higashimamiana, Ushiku, Ibaraki 300-1295, Japan 3The Japan Steel Works, 11-1 Osaki 1-chome, Shinagawa-ku, Tokyo 141-0032, Japan Lunch 12:00 -13:30 September 1 Parallel Session B: Basic Physics Session B4: Defects Room: Meeting Room 201 10:20 –11:50 Chairs: Filip Tuomisto and Wengang Bi TuBI6 (invited) 10:20 - 10:50 Vacancy-Type Defects in GaN and InxGa1-XN Studied by Means of Positron Annihilation Spectroscopy Akira Uedono1, Shoji Ishibashi2, Nagayasu Oshima3, Ryoichi Suzuki3, Tomás Palacios4, and Masatomo Sumiya5 1Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Japan 2Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology, Japan 3Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Japan 4Microsystems Technology Laboratories, Massachusetts Institute of Technology, USA 5Wide Bandgap Material Group, National Institute for Materials Science, Japan TuBO7 10:50 - 11:05 Experimental and Theoretical Study of in Segregation to Dislocations in InGaN Matthew Horton1, Sneha Rhode1, Suman-Lata Sahonta2, Menno Kappers2, Sarah Haigh3, Timothy Pennycook4,5, Colin Humphreys2, Michelle Moram1 1Department of Materials, Imperial College London, London, United Kingdom 2Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, United Kingdom 3School of Materials, University of Manchester, Manchester, United Kingdom 4SuperSTEM, STFC Daresbury Laboratories, Warrington, United Kingdom 5Department of Materials, University of Oxford, Oxford, United Kingdom TuBO8 11:05 - 11:20 The Role of Oxygen for the Polarity Inversion of III-Nitrides on Sapphire Investigated by Transmission Electron Microscopy Stefan Mohn1, Ronny Kirste2, Marc P. Hoffmann2, Ramon Collazo2, Zlatko Sitar2, and Martin Albrecht1 1Leibniz Institute for Crystal Growth, Berlin, Germany 2Material Science and Engineering, North Carolina State University, Raleigh, NC, United States TuBO9 11:20 - 11:35 Native Defects Related Properties of Low Temperature Grown, Non-Stoichiometric Gallium Nitride K. M. Yu1,2, Min Ting2,3, S. V. Novikov4, W. L. Sarney5, S.P. Svensson5, A. V. Luce2,6, J. D. Denlinger7, W.Walukiewicz2, and C. T. Foxon4 1Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong 2Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 USA 3Department of Mechanical Engineering, University of California, Berkeley, CA 94720 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 5US Army Research Laboratory, 2800 Powder Mill Road, Adelphi MD, 20783 USA 6Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 7Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA TuBO10 11:35 - 11:50 Atomic-Scale Deformation of GaN by Nanoindentation Paula G. Caldas1, Elizandra M. Silva1, Rodrigo Prioli1,2, Jingyi Huang2, Reid Juday2, Alec Fischer2 and Fernando A. Ponce2,1 1Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Brazil 2Department of Physics, Arizona State University, USA Lunch 12:00 -13:30 September 1 Parallel Session C: Optical Devices Session C4: Nano LEDs Room: Convention Hall No. 2 -II 10:20 –11:50 Chairs: Katsumi Kishino and Tao Wang TuOI6 (invited) 10:20 - 10:50 GaN LEDs for Multi-Gb/S Visible Light Data-Communications Jonathan J.D. McKendry, Enyuan Xie, Johannes Herrnsdorf, Erdan Gu, and Martin D. Dawson Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow G1 1RD, UK TuOO7 10:50 - 11:05 Fabrication and Characterization of Single Pyramid InGaN/GaN Micro Light-Emitting Diode Weijie Chen, Jiali Lin, Guoheng Hu, Xiaobiao Han, Minggang Liu, Yibin Yang, Zhisheng Wu, Yang Liu, and Baijun Zhang* School of Physics and Engineering, Sun Yat-sen University, China TuOO8 11:05 - 11:20 Low-Thermal-Resistance Well-Ordered Nanocolumns LED Employing Flip-Chip Structure Daishi Fukushima1, Hiroaki Hayashi1, Tomohiro Noma1, Yuta Konno1, and Katsumi Kishino1,2 1Sophia University, Japan, 2Sophia Nanotechnology Research Center, Japan TuOO9 11:20 - 11:35 Controlling of the Angular Emission of InGaN/GaN Core-Shell Nano-LEDs Array S. M. Lis, P.-M. Coulon, E.D. Le Boulbar, I. Girgel, C. J. Lewins, P.A. Shields, D.W.E. Allsopp Department of Electonic and Electical Engineering, University of Bath, BA2 7AY, United Kingdom TuOO10 11:35 - 11:50 Yellow-Green InGaN Micro-LEDs Grown on Patterned SiC-on-Si Pseudo-Substrate David Massoubre*, Jisheng Han, Li Wang, Jessica Chai and Sima Dimitrijev Queensland Micro- and Nanofabrication Centre, Griffith University, Australia Lunch 12:00 -13:30 September 1 Parallel Session D: Electronic Devices Session D4: Novel HEMTs Room: Convention Hall No. 2-III 10:20 –11:50 Chairs: Siddharth Rajan and Kai Cheng TuEI6 (invited) 10:20 - 10:50 Optoelectronic Devices on AlGaN/GaN HEMT Platform Kevin J. Chen, Baikui Li, Xi Tang, and Jiannong Wang The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong TuEO7 10:50 - 11:05 Enhancement-Mode Operation of AlInN/AlN/GaN/Si (111) HEMTs by GaN:Mg Capping Layers Jonas Hennig, Armin Dadgar, Jürgen BläSiNg, Marc Hoffmann, Marcus Müller, Matthias Müller, Peter Veit, Jürgen Christen, and André Strittmatter Otto-von-Guericke-University Magdeburg, Germany TuEO8 11:05 - 11:20 MOCVD Growth of DH-HEMT Buffers with Low-Temperature AlN interlayer on 200 mm Si (111) Substrate for Breakdown Voltage Enhancement Ming Zhao*, Hu Liang, Kandaswamy Prem Kumar, Marleen Van Hove, Rafael Venegas, Evi Vranken, Paola Favia, Annelies Vanderheyden, Danielle Vanhaeren, Yoga Saripalli, Stefaan Decoutere and Robert Langer Imec vzw, Kapeldreef 75, 3001 Leuven, Belgium TuEO9 11:20 - 11:35 Subthreshold Mobility in AlGaN/GaN HEMTs: Reduced Switching Speed of Power Devices William Waller1, Michael J Uren1, Kean Boon Lee2, Peter A Houston2, Ivor Guiney3, David J Wallis3, Colin J Humphreys3, and Martin Kuball1 1CDTR, H H Wills Physics Laboratory, University of Bristol, United Kingdom 2Department of Electronic and Electrical Engineering, University of Sheffield, United Kingdom 3Department of Material Science and Metallurgy, University of Cambridge, United Kingdom TuEO10 11:35 - 11:50 Quasi-Ballistic Transport in AlGaN/GaN Tunneling Hot Electron Transistors Zhichao Yang1*, Yuewei Zhang1, Sriram Krishnamoorthy1, Digbijoy N. Nath1, Jacob B. Khurgin2, and Siddharth Rajan1 1Dept. of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, 43210 2Dept. of Electrical and Computer Engineering, The Johns Hopkins Univerisity, Baltimore, MD 21218 Lunch 12:00 -13:30 September 1 Parallel Session A: Growth Session A5: BN and Related Materials Room: Convention Hall No. 2-I 13:30 - 15:30 Chairs: Gang Wang and ChangLee Hong TuGI11 (invited) 13:30 - 14:00 Hexagonal Boron Nitride (H-BN) Epilayers: Growth, Properties, and Applications Hongxing Jiang, Jingyu Lin, and Jing Li Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USA TuGI12 (invited) 14:00 - 14:30 Optical Properties of Hexagonal Boron Nitride Guillaume Cassabois Univ Montpellier II, France TuGO13 14:30 - 14:45 Modulated p-Type Doping of Hexagonal-BN Single Atomic Layer in Wafer-Scale Chenping Wu1, Abdul Majid Soomro1, Huachun Wang1, Hongmei Xu1, Chuan Liu2, Xiaodong Yang2, Junyong Kang1, and Duanjun Cai1,* 1Fujian Key Laboratory of Semiconductor Materials and Applications, School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, China 2State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China. TuGO14 14:45 - 15:00 Role of Ar+ Ion Irradiation in Plasma-Assisted MBE Growth of c-BN Thin Films Kazuyuki Hirama, Yoshitaka Taniyasu, Shin-ichi Karimoto, and Hideki Yamamoto NTT Basic Research Laboratories, NTT Corporation TuGO15 15:00 - 15:15 WS2: A Promising Near-Lattice-Matched Substrate for GaN Priti Gupta1, A. A. Rahman1, Shruti Subramanian1*, Shalini Gupta1,2, Bhakti Jariwala1, Amit P. Shah1, A. Thamizhavel1 and Arnab Bhattacharya1 1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India 2UM-DAE Center for Excellence in Basic Sciences, Mumbai, India *Presently at Department of Materials Science and Engineering, Pennsylvania State University, USA TuGO16 15:15 - 15:30 The Impact of Graphene Properties on GaN and AlN Nucleation Zakaria Y. Al Balushi1,3, Takahira Miyagi1,3,4, Yu-Chuan Lin1,3, Ke Wang2, Lazaro Calderin2,3, GaNesh Bhimanapati1,3, Joshua A. Robinson1,2,3 and Joan M. Redwing1,2,3 1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA, 2Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA, 3Center for Two-Dimensional and Layered Materials, University Park, Pennsylvania 16802, USA, 4 Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa, 221-8755, Japan Coffee Break 15: 30 - 15:50 September 1 Parallel Session B: Basic Physics Session B5: Nano and Low-dimensional Structures Room: Meeting Room 201 13:30 - 15:30 Chairs: Ana Cros and DongXin Wu TuBI11 (invited) 13:30 - 14:00 Controlled Synthesis of GaN-Based Nanowires for Photoelectrochemical Water Splitting Applications Mohamed Ebaid1, Jin-Ho Kang1, and Sang-Wan Ryu1,2 1Department of Physics, Chonnam National University, Gwangju 500-757, Korea 2Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea TuBI12 (invited) 14:00 - 14:30 X-Ray Nanobeams for Nitride Heterostructures Joël Eymery1, Agnès Messanvi1,2,*, Anna Mukhtarova1, Christophe Durand1, Maria Tchernycheva2, François Julien2, Marta Elzo Aizarna1, Gema Martinez-Criado3, Jaime Segura-Ruiz3, Tobias Schülli3, Damien Salomon3, Benito Alén4, Marie-Ingrid Richard5,3, Stéphane Labat5, Olivier Thomas5, Ondrej Mandula6, Catherine Bougerol7, Vincent Favre-Nicolin18 1University Grenoble Alpes, CEA, INAC-SP2M, F-38000 Grenoble, France 2Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Orsay, France 3European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France 4IMM-Instituto de Microelectronica de Madrid, (CNM-CSIC), 28760, Tres Cantos, Spain 5Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397, Marseille, France 6Fondation Nanoscience, 23 Rue des Martyrs, 38000 Grenoble, France 7Univ. Grenoble Alpes, CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 8Institut Universitaire de France, Paris, France TuBO13 14:30 - 14:45 Electronic and Optical Properties of m-Plane InGaN Quantum Wells: A Combined Experimental and Theoretical Analysis S. Schulz1, M. A. Caro1, D. Tanner1, E. P. O’Reilly1, D. Sutherland2, M. J. Davies2, P. Dawson2, F. Oehler3, J. T. Griffiths3, F. Tang3, C. J. Humphreys3, R. A. Oliver3 1Photonics Theory Group, Tyndall National Institute, Cork, Ireland 2School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK. 3Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, CB3 0FS, UK. TuBO14 14:45 - 15:00 Excitation-Dependent Carrier Dynamics in Active Regions of Multiple InGaN Double Heterostructures K. Nomeika1, S. Miasojedovas1, S. Nargelas1, R. Aleksiejūnas1, P. Ščajev1, D. Dargis1, V. Avrutin2, H. Morkoç2, Ü. Özgür2, and K. Jarašiūnas1 1Institute of Applied Research, Vilnius University, Vilnius, Lithuania 2Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, USA TuBO15 15:00 - 15:15 Addressing Carrier Localization and Recombination in AlGaN/GaN Multi-Quantum Wells by Comparative Atom Probe Tomography, Scanning Transmission Electron Microscopy and Micro-Photoluminescence L. Mancini1, D. Hernandez-Maldonado1, W. Lefebvre1, I. Blum1, M. Gilbert1, F. Vurpillot1, R. Butté2, N. Grandjean2, M. Tchernycheva3, L. Rigutti1 1Groupe de Physique des Matériaux, UMR CNRS 6634, University and INSA of Rouen, Normandie University, 76800 St. Etienne du RoUVray, France 2Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland 3Institut d’Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France TuBO16 15:15 - 15:30 Optical and Structural Properties of GaN Core-Shell Micropillar Arrays on Si (111) Fabricated by Combined Top-Down and Bottom-Up Process Marcus Müller1,2, Gordon Schmidt1, Sebastian Metzner1, Eduardo Antúnez de Mayolo1, Peter Veit1, Frank Bertram1, Sergiy Krylyuk2,4, Ratan Debnath2,5, Jong-Yoon Ha2,4, Baomei Wen2,5, Paul Blanchard3, Alexana Roshko3, Norman Sanford3, Abhishek Motayed2,4,5, Matthew R. King6, Albert V. Davydov2, and Jürgen Christen1 1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany 2Materials Science and Engineering Division, National Institute of Standards and Technology, USA 3Quantum Electronics and Photonics, National Institute of Standards and Technology, USA 4Institute for Research in Electronics and Applied Physics, University of Maryland, USA 5N5 Sensors Inc., USA 6Northrop Grumman ES, Linthicum, USA Coffee Break 15: 30 - 15:50 September 1 Parallel Session C: Optical Devices Session C5: Single Photon Devices Room: Convention Hall No. 2-II 13:30 - 15:30 Chairs: YongHong Cho and Philip Dawson TuOI11 (invited) 13:30 - 14:00 Growth and Optical Properties of GaN-Based Quantum Dots for Single Photon Emission Yasuhiko Arakawa Univ of Tokyo, Japan TuOI12 (invited) 14:00 - 14:30 Excitons and Phonons in Nitride Nanostructures G. Callsen1, G. Hönig1, S. Kalinowski1, A. Bokov1, A. Schliwa1, A. Hoffmann1, S. Kako2, Y. Arakawa2, J. Teubert3, P. Becker3, M. Eickhoff3 1Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany 2University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904, Japan 3Justus Liebig-Universität Gießen, 35392 Gießen, Germany TuOO13 14:30 - 14:45 Growth and Optical Properties of Self-Assembled Non-Polar (11-20) InGaN Quantum Dots towards a Linearly Polarised Blue Single Photon Source Tongtong Zhu1, Benjamin P.L. Reid2, Claudius Kocher2, Fabrice Oehler1, Menno J. Kappers1, Robert A. Taylor2, and Rachel A. Oliver1 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom 2Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom TuOO14 14:45 - 15:00 InGaN Single Photon Emitters Modulated by Surface Acoustic Waves E. Chernysheva1, S. Lazić1, Ž. Gačević2, N. García-Lepetit2, H. P. van der Meulen1, E. Calleja2 and J. M. Calleja1 1Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain 2ISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid, Spain TuOO15 15:00 - 15:15 Deterministic Plasmonic Nanofocusing in Site-Controlled InGaN Single Quantum Dot Array Su-Hyun Gong1, Je-Hyung Kim1, Young-Ho Ko1, Christophe Rodriguez1, Jonghwa Shin2, Yong-Hee Lee1, Le Si Dang3, Xiang Zhang4, and Yong-Hoon Cho1* 1Department of Physics and KI for the NanoCentury, KAIST, Daejeon, 305-701, Republic of Korea 2Department of Materials Science and Engineering, KAIST, Daejeon, 305-701, Republic of Korea 3Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9, France 4Nanoscale Science and Engineering Center, 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, CA 94720, USA TuOO16 15:15 - 15:30 Emission Characteristics in Soft Potential Profile InGaN/GaN Quantum Wells Chao Shen1, Tri B. Susilo2, Irfan Khan2, Pawan Mishra1, Bilal Janjua1, Tien Khee Ng1, Hind Althib3, Mohammad A. Alsunaidi2, and Boon S. Ooi1* 1Photonics Laboratory, King Abdullah University of Science and Technology, Saudi Arabia 2Department of Electrical Engineering, King Fahd University of Petroleum and Minerals, Saudi Arabia 3Department of Physics, University of Dammam, Saudi Arabia Coffee Break 15: 30 - 15:50 September 1 Parallel Session D: Electronic Devices Session D5: Reliability of Electronic Devices Room: Convention Hall No. 2-III 13:30 - 15:30 Chairs: Yifeng Wu and Gaudenzio Meneghesso TuEI11 (invited) 13:30 - 14:00 Vertical Power Semiconductor Electronic Devices Based on Bulk GaN Substrates I.C. Kizilyalli, T. Prunty, A. Hegedus*, and O. Aktas Avogy Inc. San Jose, CA-95134, U.S.A and *AGH Analytics, Burlingame, CA 94010. TuEI12 (invited) 14:00 - 14:30 GaN HEMT with AlGaN Back Barrier for High Power MMIC Switch Application Chen Tangsheng, Chen Tao, Ren Chunjiang, Shen Hongchang, Li Zhonghui and Gao Tao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, 210016, China TuEO13 14:30 - 14:45 Study of Regrown and Si-Implanted Ohmic Contacts for High Frequency FETs and MMICs Peter Brückner, Rüdiger Quay, Michael Mikulla, and Oliver Ambacher Fraunhofer Institute of Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany TuEO14 14:45 - 15:00 Microstructure and Physical Mechanism of Au-Free Ohmic Contacts to AlGaN/GaN Heterostructures Annealed at 600 OC Jinhan Zhang1, Sen Huang2, Qilong Bao2, Xinhua Wang2, Ke Wei2, Xinyu Liu2, Yijun Shi1, Qi Zhou1, Wanjun Chen1, Bo Zhang1 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China TuEO15 15:00 - 15:15 Si Ion Implantation and Activation in NH3 for CMOS-Compatible Fabrication of GaN HEMTs on Si Substrates Zhihong Liu1*, Chieh-Chih Huang1, Weichuan Xing2, Dirk Fahle3, Michael Heuken3, Geok Ing Ng2, and Tomás Palacios4 1Singapore-MIT Alliance for Research and Technology, Singapore; 2Nangyang Technological University, Singapore; 3AIXTRON SE, Herzogenrath, Germany; 4Massachusetts Institute of Technology, MA, USA TuEO16 15:15 - 15:30 Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment Shuxun Lin1, Maojun Wang1, Bing Xie1, Cheng P. Wen1, Min Yu1, Jinyan Wang1, Yilong Hao1, Wengang Wu1, Bo Shen2, Kevin J. Chen3 1The Institute of Microelectronics, Peking University, Beijing, China 2School of Physics, Peking University, China 3Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong Coffee Break 15: 30 - 15:50 September 1 Parallel Session A: Growth Session A6: Semipolar Materials and Devices Room: Convention Hall No. 2-I 15:50 – 17:50 Chairs: Jung Han and Baoping Zhang TuGI17 (invited) 15:50 - 16:20 Fabrication of High-Quality Semipolar GaN Templates: an Alternative to Free-Standing Substrates Jesús Zúñiga Pérez CRHEA, France TuGO18 16: 20 - 16:35 Planar Semipolar (11-22) Cyan InGaN/GaN LEDs Grown on Patterned Sapphire Substrates Tobias Meisch1, Raphael Zeller1, Sabine Schörner2, Klaus Thonke2, Lutz Kirste3, Theo Fuchs3, Marian Caliebe1, Ferdinand Scholz1 1Institute of Optoelectronics, University Ulm, Germany 2Institute of Quantum Matter, University Ulm, Germany 3Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany TuGO19 16:35 - 16:50 Semi-Polar (11-22) GaN Grown on Patterned Si Substrates X Yu, J Bai, S Shen, Y Hou, Y Gong, K Xing and T Wang* Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom TuGO20 16:50 - 17:05 Towards Defect Free Semi-Polar (11-22) GaN Templates on Prestructured Sapphire Yisong Han1, Marian Caliebe2, Ferdinand Scholz2, Markus Pristovsek1, Tongtong Zhu1, Menno Kappers1 and Colin Humphreys1 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom 2Institute of Optoelectronics, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany TuGO21 17:05 - 17:20 Strain Dependence of in Incorporation in m-Plane GaInN/GaN Multi Quantum Well Structures P. Horenburg, E. R. Buβ, U. Rossow, H. Bremers, T. Langer, M. Klisch, and A. Hangleiter Institute of Applied Physics, Braunschweig University of Technology, Germany TuGO22 17:20 - 17:35 Improved Electroluminescence Characteristics of Blue InGaN Quantum Wells on m-Plane GaN “Double Miscut” Substrates Leah Y. Kuritzky1, Daniel J. Myers1, Joseph Nedy2, Kathryn M. Kelchner1, Shuji Nakamura1,2, Steven P. DenBaars1,2, Claude Weisbuch1,3, James S. Speck1 1Materials Department, University of California, Santa Barbara, 93106 USA 2Electrical and Computer Engineering Department, University of California, Santa Barbara, 93106 USA 3Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, Palaiseau, 91128 France TuGO23 17:35 - 17:50 Growth and Characterization of Polar and Semipolar (11-22) Al (In,Ga)N Layers Using MOVPE Duc V. Dinh1*, S. N. Alam1,2, H. N. Li1,2, Peter J. Parbrook1,2 1Tyndall National Institute, University College Cork, Cork, Ireland 2School of Engineering, University College Cork, Cork, Ireland September 1 Parallel Session B: Growth Session B6: AlGaN Growth and Devices Room: Meeting Room 201 15:50 – 17:50 Chairs: DongSeon Lee and Dabing Li TuBI17 (invited) 15:50 - 16:20 Fabrication of High-Quality AlN on Sapphire for Deep-UV Light Source H. Miyake1,2,*, S. Suzuki2, C-H. Lin2, K. Hiramatsu2, and H. Fukuyama3 1Graduate School of Regional Innovation Studies, Mie University, Japan 2Department of Electrical and Electronic Engineering, Mie University, Japan 3Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan TuBI18 (invited) 16:20 - 16:50 Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped AlGaN with Low AlN Molar Fraction for Improvement of Wall Plug Efficiency of Nitride-Based LED M. Iwaya1, K. Takeda1, D. Iida1, T. Sugiyama1, T. Takeuchi1, S. Kamiyama1, and I. Akasaki1,2 1Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan, 2Akasaki Research Center, Nagoya University, Nagoya 464-8062, Japan TuBO19 16:50 - 17:05 Surface Morphology Control and Strain Relaxation in Planar AlxGa1-xN on AlN Templates by MOVPE Growth H. N. Li1,2, M. Conroy1,3, G. Kusch4, V.Z. Zubialevich1, T. C. Sadler1, J. D. Holmes1,3, R. W. Martin4 and P. J. Parbrook1,2 1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University College Cork, Cork, Ireland 3Department of Chemistry, University College Cork, Cork, Ireland 4Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom TuBO20 17:05 - 17:20 Molecular Beam Epitaxy of Free-Standing Bulk Wurtzite AlxGa1-xN Layers Using a Highly Efficient RF Plasma Source S.V. Novikov1, C.R. Staddon1, S-L. Sahonta2, R.A. Oliver2, C.J. Humphreys2 and C.T. Foxon1 1School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 2Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK TuBO21 17:20 - 17:35 High-Quality AlN Growth on Nitrided Sapphire Combined with Low- and High- Temperature Alternation Technique Fujun Xu*, Jiaming Wang, Chenguang He, Lisheng Zhang, Zhixin Qin, and Bo Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China TuBO22 17:35 - 17:50 Polarity Inversion of GaN by Preflowing Metal-Source in Metal-Organic Chemical Vapor Deposition Chengguo Li1,a, Hongfer Liu2, Soo Jin Chua1,2,b 1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore 2Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore September 1 Parallel Session C: Optical Devices Session C6: Micro & Nano Lasers Room: Convention Hall No. 2-II 15:50 – 17:50 Chairs: Halsall Matthew and Xia Guo TuOI17 (invited) 15:50 - 16:20 Lasing Mechanism and Applications of III-Nitride Plasmonic Nanolasers Shangjr Gwo National Tsing-hua Univ TuOI18 (invited) 16:20 - 16:50 Electrically Injected AlGaN Nanowire Deep UV Lasers on Si Z. Mi1, S. Zhao1, X. Liu1, K.H. Li1, J. Kang1, Q. Wang1, S. Y. Woo2, and G. Botton2 1Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada 2Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON L8S 4M1, Canada TuOO19 16:50 - 17:05 III-Nitride Microcrystal Cavities with Quasi Whisparing Gallery Modes Grown in-Situ by Molecular Beam Epitaxy T. V. Shubina1, V. N. Jmerik1, V. Yu. Davydov1, D. R. Kazanov1, A. N. Smirnov1, D. V. Nechaev1, N. V. Kuznetsova1, G. Pozina2, C. Hemmingsson2, and S. V. Ivanov1 1Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia 2Department of Physics, Chemistry and Biology, Linköping University, Linköping, Sweden TuOO20 17:05 - 17:20 Room Temperature Microdisk Lasing at 275 nm Based on GaN/AlN Quantum Wells Grown on Silicon J. Sellés1, C. Brimont1, G. Cassabois1, P. Valvin1, T. Guillet1, I. Roland2, Y. Zeng2, X. Checoury2, P. Boucaud2, M. Mexis3, F. Semond3 and B. Gayral4 1Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ. Montpellier2, Montpellier, F-France 2Institut d'Electronique Fondamentale (IEF), CNRS-Universite Paris sud 11, F-91045, Orsay, France 3Centre de Recherche pour l'Hetero-Epitaxie et ses Applications (CRHEA)-CNRS, Rue Bernard Gregory, 06560, Valbonne, F-France 4CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France TuOO21 17:20 - 17:35 Direct Evidence for Dislocation-Based Whisker Formation in GaN-Based Microdisk Lasers C. Ren1, T.J. Puchtler1, J. Griffiths1, A. Woolf2, D. Gachet3, T. Zhu1, E. Hu2, R.A. Oliver1 1Dept. Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 0FS, UK. 2School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts, 02138, USA. 3Attolight AG, EPFL Innovation Park - Bâtiment D, CH-1015 Lausanne, Switzerland. TuOO22 17:35 - 17:50 Optimizing InGaN/GaN Gain Layers for Low-Threshold Microdisk Lasers Danqing Wang1, Nan Niu1, Alexander Woolf1, Tongtong Zhu2, Rachel A. Oliver2 and Evelyn L. Hu1 1School of Engineering and Applied Sciences, Harvard University, USA 2Department of Materials Science and Metallurgy, University of Cambridge, UK September 1 Parallel Session D: Optical Devices Session D6: Detecting Devices Room: Convention Hall No. 2-III 15:50 – 17:50 Chairs: Hideki Hirayama and Jincheng Zhang TuEI17 (invited) 15:50 - 16:20 Laterally Confined Nanostructures and Optoelectronic Devices of III-Nitrides Rong Zhang1,2, Bin Liu1, Zhe Zhuang1, Guogang Zhang1, Ting Zhi1, Tao Tao1, Yi Li1, Zili Xie1, Hong Zhao1, Xiangqian Xiu1, Peng Chen1 and Youdou Zheng1 1School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China 2Shandong University, Jinan 250100, People’s Republic of China TuEO18 16:20 - 16:35 External Quantum Efficiency of Bottom-Illuminated AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors Moritz Brendel, Markus Helbling, Andrea Knigge, Frank Brunner, and Markus Weyers Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany TuEO19 16:35 - 16:50 Enhanced Responsivity of AlGaN-Based Deep Ultraviolet Detectors by Dipole Surface Plasmon Resonance of Al Nanoparticles Dabing Li, Xiaojuan Sun, Hang Song, Yiren Chen, Hong Jiang, Zhiming Li, Guoqing Miao and Zhiwei Zhang State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China TuEO20 16:50 - 17:05 Engineering the Electronic Band Structure of Highly Mismatched Group III-Nitride Based Alloys for Solar Power Utilization Natalie Segercrantz1,2, K. M. Yu2,3, Min Ting2, S. V. Novikov4, W. L. Sarney5, S.P. Svensson5, M. Shaw6, R. W. Martin6, W.Walukiewicz2, and C. T. Foxon4 1Department of Applied Physics, Aalto University, FI-00076 Aalto, Finland 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 USA 3Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 5US Army Research Laboratory, 2800 Powder Mill Road, Adelphi MD, 20783 USA 6Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK TuEO21 17:05 - 17:20 Realization and Performance Improvements of Full AlGaN Epi-Structure Solar-Blind Avalanche Photodiodes Weichong Wu, Wei Tan, Yingda Chen, Hongxian Zhang, Enze Han, Hualong Wu, Zhisheng Wu, and Hao Jiang* State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, P. R. China TuEO22 17:20 - 17:35 Short-Wavelength, Mid- and Far-Infrared Intersubband Absorption in Nonpolar GaN/Al(Ga)N Heterostructures C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol and E. Monroy Université Grenoble-Alpes, CEA-INAC-SP2M and CNRS-Institut Néel 17 rue des Martyrs, 38054 Grenoble cedex 9, France September 1 Poster Room: Meeting Room 203 18:00 – 20:00 TuGP1 Preferential Nucleation Site of [1-10-3]-Oriented GaN Twins from the View Point of Effective Surface Energy Hansub Yoon, Miyeon Jue, Dongsoo Jang, and Chinkyo Kim Dept. of Physics, Kyung Hee University, 26 Kyunghee-daero, Dongdaemoon-gu, Seoul, Korea. TuGP2 GaN Non-Polar (10 -10) and Semi-Polar (10 -11) HVPE Bulk A.Pechnikov, V.Nikolaev Perfect Crystals LLC, 26 Politekhnicheskaya str., St.Petersburg, 194021 TuGP3 High Quality AlN Layer Regrown on AlN Nano Structure by Using Hydride Vapor Phase Epitaxy Hoki Son1, Jinwon Gim1, Tae-Young Lim1, Mijai Lee1, Jin-Ho Kim1, Dae-Woo Jeon1,*, Jonghee Hwang1, Hae-Kon Oh2, Young Jun Choi2, Hae-Yong Lee2 1Korea Institute of Ceramic Engineering & Technology, 101, Soho-ro, Jinju-si, Gyeongsangnam-do 2LumiGNtech Co., sk techno park, Soha-dong, Gwangmyeong-si, Gyeonggi-do, Korea TuGP5 Regrowth of 1.5-inch Free-Standing HVPE-GaN Crystals. Slicing, Wafering, and Preparation of Seeds Michal Fijalkowski1, Tomasz Sochacki1,2, Mikolaj Amilusik1,2, Boleslaw Lucznik1,2, Malgorzata Iwinska1, Grzegorz Kamler1, Jan L. Weyher1 and Michal Bockowski1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw, Poland TuGP6 Modelling Mineralizer-Mediated Species Transport in Ammonothermal Growth of Nitride Crystals J. Seebeck1, P. Savva2, J. Erlekampf2, E. Meissner1,2, J. Friedrich1, L. Frey1,2 1Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystr. 10, 91058 Erlangen, Germany 2Chair of Electron Devices, Friedrich-Alexander-University of Erlangen-Nuremberg, Cauerstr. 6, 91058 Erlangen, Germany TuGP7 Semi-Insulating HVPE-GaN Crystals Grown on High-Quality GaN Substrates Boleslaw Lucznik1,2, Mikolaj Amilusik1,2, Michal Fijalkowski1, Tomasz Sochacki1,2, Janusz L. Weyher1, Grzegorz Kamler1, Malgorzata Iwinska1, Izabella Grzegory1, and Michal Bockowski1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2TopGaN Sp z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland TuGP8 Cross-Stacked Carbon Nanotubes Assisted Self-Separation of Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy Tongbo Wei1, Jiankun Yang1, Yang Wei2, Yun Zhang1, Jianchang Yan1, Junxi Wang1, Shoushan Fan2, and Jinmin Li1 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China 2Department of Physics and TSiNghua–Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China TuGP9 Control of the Nucleation Phenomenon in the Na Flux Growth of GaN by Adding Different Types of Carbon Zongliang Liu1, Guoqiang Ren1,2, Xujun Su1, Jianfeng Wang1,2 and Ke Xu1,2 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China 2Suzhou Nanowin Science and Technology Co., Ltd, Suzhou, China TuGP10 Comparison of HVPE-GaN Growth with HCl and Cl2 Tomasz Sochacki1,2, Michal Fijalkowski1, Mikolaj Amilusik1,2, Boleslaw Lucznik1,2, Pawel Kempisty1, Malgorzata Iwinska1, Jan L. Weyher1, Grzegorz Kamler1, Izabella Grzegory1, and Michal Bockowki1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2TopGaN Sp. Z o.o., Sokolowska 29/37, 01-142 Warsaw, Poland TuGP11 GaN Epitaxial Films Grown on Cleavage Plane (001) of β-Ga2O3 Single Crystals V.I.Nikolaev1,2,3, A.I.Pechnikov1, A.E.Romanov2,3, B.E.Bougrov3 1Perfect Crystals LLC, 194064, St. Petersburg, Russia 2Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia 3ITMO University, 197101 St. Petersburg, Russia TuGP12 MOCVD and HVPE GaN Growth on AlN Template on Sapphire Yilmaz Dikme1, ChuanYu Jia2, Nanliu Liu2, Ruihong Luo2, Peicai Wu3, YinShu Yi2, ZhaiYong Peng2, Shunfeng Li3, Guoyi Zhang2,3 1Aixatech GmbH, Thomas-Edison-Strasse 5-7, 52599 Baesweiler, Germany 2SiNonitride Semiconductor Co. Ltd, Sci-Tech Industrial Park, Qishi Town, Dongguan City Guangdong Province, P.R. of China 3Dongguan Institute of Optoelectronics Peking University, Technology & Innovation Park Songshanhu, Dongguan, Guangdong Province, P. R. of China TuGP13 Growth of GaN Template on PSS by Novel HVPE with Multi-Stack J.H. Song*, S.H. Yeon, S.E. Lee, M.C. Lee, J.Y. Kim, Y.J. Lee, S.S. Park, and J.H. Lee Tgo tech, Dongtansadan 2 gil, Hwasung, Gyeonggi-Do, Korea, 445-812 TuGP14 Growth of High Quality Gallium Nitride on Graphene Lin Qi1,2, Yu Xu3, Bing Cao1,2,*, Shunyu He1,2, Zongyao Li1,2, Chinhua Wang1,2, Jicai Zhang3, Jianfeng Wang3, Ke Xu3 1College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, P.R. China 2Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, P.R. China 3Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P.R. China TuGP15 Low Temperature Synthesis of GaN and AlN Powders by the Ammonothermal Method Daisuke Tomida, Junhyeong Choi, Kun Qiao and Chiaki Yokoyama Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan TuGP16 The Effects of Growth Temperatures and V/III Ratios for a-Plane GaN Epi-Layer on r-Plane Sapphire Grown by HVPE Ju-Hyung Ha, Mi-Seon Park, Won-Jae Lee1, Young-Jun Choi, Hae-Yong Lee2 1Department of Materials and Component Engineering, Dong-Eui University Busan 614-714, Korea 2LumiGNtech Co., Ltd., Room 902, E-dong, Gwangmyeong Techno-Park, 1345 Soha-dong, Gwangmyeong-si, Gyeonggi-do 434-050, Korea TuGP17 The Properties of Chemical Mechanical Polishied AlN Epi- Layer on Sapphire Grown by HVPE at Relatively Low Temperature Young Jun Choi1*, Hae-Gon Oh1, Jin-Hun Kim1, Jung-Young Jung1, Hae-Yong Lee and Jonghee Hwang,2 1LumiGNtech Co., Ltd., Room 902, E-dong 60-Haan-ro, Gwangmyeong-si, Gyeonggi-Do, Korea 2KICET, 101 Soho-ro, Jinju-si, Gyeongsangnam-do, Korea. TuGP18 Alternately-Double-Sided Growth of Low-Curvature GaN Templates on Sapphire Substrate by Hydride Vapor Phase Epitaxy Narihito Okada1, Takeshi Yamamoto1, Hiroshi Ihara1, Keisuke Yamane2 and Kazuyuki Tadatomo1 1Graduate School of Science and Engineering, Yamaguchi University, Japan 2Toyohashi University of Technology, Japan TuGP19 MBE Growth of AlN Nanowires on Silicon Using Alumination Process Yanxiong E, Zhibiao Hao1, Jiadong Yu, Chao Wu, Runze Liu, Lai Wang, Bing Xiong, Jian Wang, Yanjun Han, Changzheng Sun and Yi Luo Tsinghua National Laboratory for Information Science and Technology Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China TuGP20 Characteristics of Nonpolar GaN:Mn Grown by Plasma-Assisted Molecular Beam Epitaxy Y. J. Cheng1, Y. T. Lin1, C. W. Chang1, M. Chou2, and Li-Wei Tu1 1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C 2Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, Kaohsiung 880424, Taiwan, R.O.C. TuGP21 Structural and Transport Properties of Si Doped GaN Nanowires Zhihua Fang1,2,3,4, Eric Robin5, Elena Rozas-Jiménez7, Sonia Murcia-Mascaros7, Ana Cros7, Fabrice Donatini3,4, Nicolas Mollard5, Julien Pernot3,4,6 and Bruno Daudin1,2 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 3Univ. Grenoble Alpes, Inst NEEL, F-38000 Grenoble, France 4CNRS, Inst. NEEL, F-38042 Grenoble, France 5CEA, INAC, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France 6Institut Universitaire de France, 103 boulevard Saint-Michel, F-75005 Paris, France 7Materials Science Institute, University of Valencia, P.O. Box 22085, ES-46071, Valencia, Spain TuGP22 Ion-Beam Synthesis of GaN-Based Nanocrystals Embedded in Si-Based Matrices Sapana Ranwa1, Mohit Kumar1, Anton Konakov2, Alexey Mikhaylov2, Alexey Belov2, Dmitry Korolev2, Evgenia Okulich2, Sergey Surodin2, Dmitry Nikolitchev2, Alexey Pirogov2, Dmitry Pavlov2, David Tetelbaum2, and Mahesh Kumar1 1Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011 India 2Lobachevsky University, Nizhny Novgorod, Russia TuGP23 Development of Nano-Patterned Sapphire Substrates for Deposition of AlGaInN Semiconductors by Molecular Beam Epitaxy Bowen Song1, Haiding Sun1, and Theodore Moustakas1,2,3 1Electrical and Computer Engineering Department, Boston University, USA 2Materials Science and Engineering Division, Boston University, USA 3Department of Physics, Boston University, USA TuGP24 Graphitic to Wurtzite Structure Transition in AlN Nanofilm Grown by Ammonia MBE on the (111) Si Surface Vladimir Mansurov1, Timur Malin1, Yuryij Galitsyn1 and Konstantin Zhuravlev1,2 1Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 2Novosibirsk State University, Novosibirsk, Russia TuGP25 Epitaxial Relationship of GaN Grown on GaAs (110) by Rf-Molecular Beam Epitaxy Takeshi Ikarashi1, Misao Orihara1, Shuhei Yagi1, Shigeyuki Kuboya2, Ryuji Katayama2, and Hiroyuki Yaguchi1 1Graduate School of Science and Engineering, Saitama University, Japan 2Institute for Materials Research, Tohoku University, Japan TuGP26 Ordered (8×8) SiN Phase and Amorphous Silicon Nitride Phase Formation on (111) Si Under Ammonia MBE Conditions Vladimir Mansurov1, Timur Malin1, Yuryij Galitsyn1 and Konstantin Zhuravlev1,2 1Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 2Novosibirsk State University, Novosibirsk, Russia TuGP27 Lateral Alignment of InN Nano-Scale Dots Grown on 4H-SiC(0001) Vicinal Substrates Seiya Mori, Shuhei Yagi*, Misao Orihara, Kengo Takamiya and Hiroyuki Yaguchi Graduate School of Science and Engineering, Saitama University, Japan TuGP28 The Epitaxial Growth of High In-Content InGaN by Molecular Beam Epitaxy Baoji Li1, Yuanyuan Wu1, Shulong Lu 1, Xinhe Zheng1,2, Hui Yang1 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China 2Department of Physics, College of Mathematics and Physics, University of Science and Technology, Beijing 100083, China TuGP29 Kinetics and Mechanism of (0001) Al2O3 Surface Nitridation Using Ammonia MBE Vladimir Mansurov1, Timur Malin1, Yurij Galitsyn1 and Konstantin Zhuravlev1,2 1Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 2Novosibirsk State University, Novosibirsk, Russia TuGP30 Growth and Properties of AlN on Sapphire (0001) Substrates A. Adikimenakis1, K. Tsagaraki1, A. Bairamis1,2, Ch. Zervos1,2, and A. Georgakilas1,2 1Microelectronics Research Group, IESL/FORTH, P.O. Box 1385, 71110 Heraklion, Greece 2P Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece TuGP31 Impact of Nitrogen Plasma Power Variation on the Structural and Optical Properties of InN Layers Grown on c-Sapphire Substrates by Plasma Assisted Molecular Beam Epitaxy Technique Kankat Ghosh, S. Das, D. Kumar, S. Ganguly, D. Saha and Apurba Laha Department of Electrical Engineering and Center of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Mumbai 400076, India TuGP32 AlN Growth by Ammonia MBE on Nitridated Si (111) Sebastian Tamariz, Denis Martin, Jean-François Carlin and Nicolas Grandjean Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL) CH-11015 Lausanne, Switzerland TuGP33 Effectivity of SiO2-Mask Patterns for Selective-Area Growth of GaN Nanowires on Si (111) Substrates E. Kruse1, S. Eftychis1, L. Lymperakis2, A. Adikimenakis3, G. Doundoulakis1,3, K. Tsagaraki3, M. Androulidaki3, E. Iliopoulos1, P. Tzanetakis1, A. Olziersky4, P. Dimitrakis4, V. Ioannou-Sougleridis4, P. Normand4, T. Koukoula5, Th. Kehagias5, Ph. Komninou5 and A. Georgakilas1 1Department of Physics, University of Crete, 71003 Heraklion, Greece 2Max-Planck-Institut für Eisenforschung, 40237 Düsseldorf, Germany 3Microelectronics Research Group, IESL, FORTH, 71110 Heraklion, Greece 4Department of Microelectronics, NCSR Demokritos, 15310 Aghia Paraskevi, Greece 5Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece TuGP34 Technology Development for GaN Based Power Microwave DHFET Stanislav Petrov1, Alexey Alexeev1, Dmitry Krasovitsky2, Victor Chaly2, Victor Mamaev1,3 1SemiTEq JSC, Saint-Petersburg, Russia 2Svetlana-Rost JSC, Saint-Petersburg, Russia 3State Polytechnical University, Saint-Petersburg, Russia TuGP35 α-Ga2O3 and α-(AlGa)2O3 Buffer Layers in Growth of GaN Tomohiro Yamaguchi1, Takumi Hatakeyama1, Keisuke Tanuma1, Takahide Hirasaki2, Hisashi Murakami2, Takeyoshi Onuma1 and Tohru Honda1 1Department of Applied Physics, Kogakuin University, Japan 2Division of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan TuGP36 Non-Polar and Semi-Polar GaN on Er2O3 (110) Rytis Dargis1, Marie Wintrebert-Fouquet2, Josh Brown2, Alana Fernandes2, Laurence Considine3, Tomas Grinys4, Tadas Malinauskas4, Lars Grieger5, Radek Roucka1, and Andrew Clark1 1Translucent Inc., USA 2BluGlass Ltd, Australia 3MOCVD Solutions Ltd, UK 4Institute of Applied Research, Vilnius University, Lithuania 5PANalytical B.V., the Netherlands TuGP37 Observation of in-situ Reciprocal Lattice Evolution of AlGaN/InGaN on Si (111) through GaN and AlN Interlayers by RHEED and Reflectance Ankush Bag1 and Dhrubes Biswas2 1Advanced Technology Development Center, 2Dept. of Electrical and Electronics Communication Engineering, Indian Institute of Technology Kharagpur, India. TuGP38 Catalyst-Free N-Polar InGaN/GaN Nanowires Grown on (111) Silicon by Molecular Beam Epitaxy Q.M. Chen1, C.L.Yan1, Y.Qu1*, X.Q.Wang2 1State Key Laboratory on High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China 2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China TuGP39 Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on c-Plane Sapphire by MOCVD Weike Luo*, Liang Li, Zhonghui Li, Dongguo Zhang, Xun Dong, Daqing Peng, Lei Pan, Chuanhao Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, P. R. China TuGP40 Quantum Chemical Study on Temperature Effect for Gas-Phase Reactions in GaN/AlN MOCVD Growth Baoliang Wang1, Ran Zuo1, Peng Chen2, Guoyi Zhang3 1School of Energy and Power Engineering, Jiangsu University, Zhenjiang, China 2School of Electronic Science and Engineering, Nanjing University, Nanjing, China 3School of Physics, Peking University, China TuGP41 The Influence of V/III Ratio towards Non-polar GaN Growth on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition (MOCVD)Anas Kamarundzaman1, Ahmad Shuhaimi1, Azzuliani Supangat1, Adreen Azman1, Omar Alkaissy1 1Low Dimensional Materials Research Centre (LDMRC), Universiti Malaya, Kuala Lumpur TuGP42 1.54 µm Light Emitting Devices Based on Er-Doped GaN/AlGaN Multiple Quantum Well Structures Grown by Metal-Organic Chemical Vapor Deposition Talal Al tahtamouni1,*, Jing Li2, Jingyu Lin2, Hongxing Jiang2 1Yarmouk University; 2Texas Tech University TuGP43 N-Type and p-Type AlGaN Epitaxial Layers for Ultraviolet LEDs Chun-Pin Huang1, Ko-Chen Li1, Bo-Rong Lin2, Yi-Keng Fu3, Jen-Inn Chyi2,4 and Kun-Yu Lai1,4,* 1Department of Optics and Photonics, National Central University, Taiwan, Republic of China 2Department of Electrical Engineering, National Central University, Taiwan, Republic of China 3Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan, Republic of China 4Optical Science Center, National Central University, Taiwan, Republic of China TuGP44 Growth of High-Quality High-Al AlGaN Material on the Three-Dimensional GaN Islands of Defect-Free Xiaoling Duan, Ming Xiao, Jincheng Zhang*, Jianjun Ma, Kun Tian and Yue Hao School of Microelectronics, Xidian University, China TuGP45 Effect of Gallium Source Flows on Morphology and Electrical Properties of InAlGaN Barrier Layers Grown by Pulse Metal Organic Chemical Vapor Deposition Rudai Quan, Jincheng Zhang, Junshuai Xue, Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, China TuGP46 The Influence of Growth Temperature, Pressure, and V/III Ratio on Morphology and Emission Characteristics of AlGaN Layers for Deep UV Light Emitters Joerg Jeschke1, Carsten Netzel1, Arne Knauer1, and Markus Weyers1 1Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany TuGP47 Conductivity Enhancement of AlGaN:Mg by Suppressing the Incorporation of Carbon Impurity Aiqin Tian1,2, Jianping Liu1,2, Masao Ikeda1,2, Shuming Zhang1,2, Deyao Li1,2, Liqun Zhang1,2, Kun Zhou1,2, Pengyan Wen1,2, Hui Yang1,2 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China 2Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, China TuGP48 Si-Doping Effects on Microstructure and Optical Properties of Al0.5Ga0.5N/Al0.35Ga0.65N MQWs Chenguang He, Zhixin Qin*, Fujun Xu*, Xia Zhang, Lisheng Zhang, Yong Xiang, Mengjun Hou, Shan Zhang, Xinqiang Wang, and Bo Shen* State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China TuGP49 The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200mm GaN on Silicon Matthew Charles1,2, Yannick Baines1,2, Damien Barranger1,2,3 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2CEA, LETI, MINATEC Campus, F-38054 Grenoble, France 3Laboratoire Ampère, 69134 Ecully cedex TuGP50 The Effect of III/V Ratio During AlN Growth on the Stress Evolution in GaN Grown on 6H-SiC by Plasma Assisted Molecular Beam Epitaxy M. Agrawal1, L. Ravikiran2, N. Dharmarasu1, K. Radhakrishnan2, G.S.Karthikeyan1, Y. Zheng2, S. Arulkumaran1 and G.I. Ng2 1Temasek Laboratories, Nanyang Technological University, Singapore 637553 2NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 TuGP51 Growth of p-GaN Gate Layer for Enhancement Mode GaN/AlGaN HEMT Hu Liang*, Niels Posthuma, Shuzhen You, Ming Zhao, Prem Kumar Kandaswamy, Frank Vleugels Evi Vrancken, Yoga Saripalli and Stefaan Decoutere imec vzw, Kapeldreef 75, 3001 LeUVen, Belgium TuGP52 Hole Concentration Enhancement in p-Type AlGaN Grown by Indium-Surfactant-Assisted Mg-Delta Doping Yingda Chen, Hualong Wu, Enze Han, Guanglong Yue, Zimin Chen, Zhisheng Wu, Gang Wang, and Hao Jiang* State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, P. R. China TuGP53 Influence of the Carbon-Doping Location on the Material and Electrical Properties of AlGaN/GaN Heterostructure on 4-in. Si Substrate Yiqiang Ni1, Deqiu Zhou1, Zijun Chen1, Yue Zheng1, Zhiyuan He1, Fan Yang1, Yao Yao1, Guilin Zhou1, Zhen Shen1, Jian Zhong1, Zhisheng Wu1,3, Baijun Zhang1,3*, Yang Liu1,2,* 1School of Physics and Engineering 2Institute of Power Electronics and Control Technology 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, 510275 Guangzhou, People’s Republic of China TuGP54 Effect of NH3 Flow on Incorporation Efficiency of Al Composition and Reduction of Surface Donor States in AlGaN Grown by MOVPE Dongguo Zhang, Zhonghui Li*, Daqing Peng, Xun Dong Science and Technology of Monolithic Integrated and Modules Circuits Laboratory, Nanjing Electronic Devices Institute, Nanjing, 210016, China TuGP55 Growth of GaN Epilayer with High Performance by Adopting Sputtered AlN Nucleation Layer and in-Situ AlN Interlayer Zhibin Chen1, Jincheng Zhang1* and Yue Hao1 1School of microelectronics, Xidian University, China TuGP56 Epitaxial Growth of AlN Layer on Si (111) by DC Magnetron Sputtering at Room Temperature In-Su Shin1, Donghyun Lee1, Donghyun Kim2, Daehan Choi1, Younjo Park3, and Euijoon Yoon1,3 1Dept. of Materials Science and Engineering, Seoul National University, Korea 2Korea Advanced Nano-Fab Center (KANC), Korea 3Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology (AICT), Seoul National University, Korea TuGP57 Interface Structure of AlN on Sapphire Investigated by Aberration Corrected Tem Stefan Mohn1, Natalia Stolyarchuk1, Ronny Kirste2, Marc P. Hoffmann2, Ramon Collazo2, Zlatko Sitar2, Rosa Di Felice3, and Martin Albrecht1 1Leibniz Institute for Crystal Growth, Berlin, Germany 2Material Science and Engineering, North Carolina State University, Raleigh, NC, United States 3Department of Physics, University of Southern California, Los Angeles, CA, United States TuGP58 MOVPE Growth and Characterizations of Novel BAlN/AlGaN Bragg Mirrors Reflecting at 265 nm X. Li1,2, S. Sundaram2, Y. El Gmili2, S. Bouchoule3, G. Patriarche3, F. Genty4, J-P. Salvestrini2,5, R. D. Dupuis6, P.L. Voss1,2, and A. Ougazzaden1,2 1School of Electrical and Computer Engineering, Georgia Institute of Technology, GT-Lorraine, 57070 Metz, France 2UMI 2958, Georgia Tech - CNRS, 57070 Metz, France 3LPN CNRS, UPR20, 91460 Marcoussis, France 4CentraleSupelec, LMOPS, EA4423, 57070 Metz, France 5Université de Lorraine, LMOPS, EA 4423, 57070 Metz, France 6Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA TuGP59 Improved Leakage Current and Breakdown Voltage in GaN-On-Si (111) System by Inseting an AlGaN Impurity Blocking Layer Liang He1, Yiqiang Ni1, Deqiu Zhou1, Fan Yang1, Yao Yao1,Yue Zheng1, Zhen Shen1, Guilin Zhou1, Jian Zhong1, Zijun Chen1, Zhisheng Wu1,3, Baijun Zhang1,3, Yang Liu1,2,* 1School of Physics and Engineering, 2Institute of Power Electronics and Control Technology, 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, 510275 Guangzhou, People’s Republic of China TuGP60 Influence of Sputter Conditions of Thick AlN Buffer on MOVPE Epitaxial GaN Weihan Zhang1,2 , Yufeng Li1,2 , Xilin Su3, Ye Zhang2, Shuo Liu3, Maofeng Guo2, Wen Ding1,2, Feng Yun*1,2 and Xun Hou1,2 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 7710049, P.P. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an Shaanxi, 710049, P.R. China 3Shaanxi Supernova Lighting Technology Co. Ltd. TuGP61 Improved Surface Morphology of n-AlGaN Epitaxial Layers Grown on Sapphire Substrate Using Step-Graded AlxGa1-xN Intermediate Layers for 320 nm Ultraviolet Light-Emitting Diodes Kang Bok Ko1, Ko Ku Kang1, Young Jae Park1, Min Han1, Beo Deul Ryu1, Jaehee Cho1, and Chang-Hee Hong1 1School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, 664-14, Dukjin-Dong, Dukjin-Ku, Jeonju, 561-756, South Korea TuGP62 Growth of High-Quality Ga-Rich AlGaN on GaN Islands of Defect-Free Ming Xiao, Jincheng Zhang*, Xiaoling Duan and Yue hao Key Lab of Wide Band-Gap Semiconductor Technology, School of microelectronic, Xidian University, China TuGP63 Growth and Evaluation of Thin AlN/GaN/AlN HEMT Structures by Molecular Beam Epitaxy A. Bairamis1,2, Ch. Zervos1,2, A. Adikimenakis1, A. Kostopoulos1, M. Kayampaki1, K. Tsagaraki1, G. Konstantidis1 and A. Georgakilas1,2,* 1Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technolgy-Hellas (FORTH), P.O. Box 1385, 71110 Heraklion-Crete, Greece 2Physics Department, University of Crete, Heraklion-Crete, Greece TuGP64 The Capacitance-Voltage Charactics of N-Polar GaN/AlGaN Epitaxial Wafer Daqing Peng, Zhonghui Li, Chuanhao Li, Dongguo Zhang, Liang Li, Xun Dong, Lei Pan and Weike Luo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, China TuGP65 Step Bunching Control of AlN Epilayers Grown by Metal Organic Vapour Phase Epitaxy L. S. Zhang, F. J. Xu, J. M. Wang, C. G. He, S. Zhang, M. X. Wang, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China TuGP66 Large Area Continuous MoS2 and WS2 Films Grown on AlGaN Alloys Bhakti Jariwala1, Martin Martens2, Amit Shah1, A.A. Rahman1, Arnab Bhattacharya1, 1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India 2Institut für Festkörperphysik, Technische Universität Berlin, Germany TuGP67 Structural Properties of Metamorphic GaInN-On-GaN Buffer Layers with Enlarged Inplane Lattice Parameter as Template for Strain-Engineered Long Wavelength GaInN QW Emitters Thorsten Passow, Jürgen Däubler, Lutz Kirste, Klaus Köhler, Michael Kunzer, Rolf Aidam, and Joachim Wagner Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 772, 79108 Freiburg, Germany TuGP68 Temperature-Dependent Growth of InGaN/GaN MQWs on GaN Microfacets Using Selective Area Epitaxy Guofeng Yang1,2 , Zhenlong Wu2 and Peng Chen2 1School of Science, Jiangnan University, China 2School of Electronics Science and Engineering, Nanjing University, China TuGP69 Raman and Photoluminescencecharacterization of p-Type InGaN Films Li Liang*, Luo Weike, Li Zhonghui, Dong Xun, Peng Daqing, Zhang Dongguo and Li Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China TuGP70 Growth of InGaN QWs by MOVPE Using Pulsed Precursor Flow M. Dmukauskas1, A. Kadys1, T. Malinauskas1, T. Grinys1, I. Reklaitis1, D. Dobrovolskas2, S. Stanionytė3, I. Pietzonka4, and R. Tomašiūnas1 1Institute of Applied Research, Vilnius University, Vilnius, Lithuania 2Semiconductor Physics Department, Faculty of Physics, Vilnius University, Vilnius, Lithuania 3Department of Characterization of Materials Structure, Institute of Chemistry, Centre for Physical Sciences and Technology, Vilnius, Lithuania 4OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany TuGP71 Catalyst-Free Growth of Self-Assembled InGaN Nanowires by Chemical Vapour Deposition M. Gopalakrishnan, V. Purushothaman and K. Jeganathan* Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli – 620 024, Tamil Nadu, India TuGP72 Optimized Close Couplled Showerhead® MOCVD Tool for Advanced GaN Based Blue LED Manufacturing A.R. Boyd, P. Lauffer, E. Sakalauskas, T. Korst, J. Lindner, M. Heuken AIXTRON SE, Kaiserstrasse 98, 52134 Herzogenrath, Germany TuGP73 Effect of the Temperature on the Overgrown GaN by the Monolayer Silica Microspheres Mask Ming Xiao, Jincheng Zhang*, Yi Zhao, and Yue hao Key Lab of Wide Band-Gap Semiconductor Technology, School of microelectronic, Xidian University, China TuGP74 Multi-Microscopy Investigation of the Optical Properties of Dislocations in InGaN F.C-P. Massabuau1, P. Chen1, S.L. Rhode1, T.J. O'Hanlon1, C.X. Ren1, A. Kovacs2, M.J. Kappers1, C.J. Humphreys1, R.E. Dunin-Borkowski2, and R.A. Oliver1 1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK 2Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, Jülich, Germany TuGP75 Hole Injection Mechanism Investigation by Adjusting the V-Shape Pits in InGaN/GaN Multiple Quantum Wells Blue LEDs Yufeng Li1,2, Xilin Su3, Shuo Liu3, Wen Ding1,2, Xun Hou1 and Feng Yun*1,2 1Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 7710049, P. R. China 3Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710049, P. R. China TuGP76 The Influence of a Gradient Doped p-AlInGaN on the Performance of InGaN/AlGaN Near Ultraviolet LED with an Emission of 390 nm Chuanyu Jia1, Xiaohui Feng2 and Tongjun Yu* 1School of Physics, Peking University, China TuGP77 Conversion Efficiency Investigation of InGaN Multiple Quantum Well Solar Cell Lungang Feng1,2, Yufeng Li1,2, Wen Ding1,2, Shuai Wang1,2, Hao Liu1,2, Jiangteng Wang1,2, Zhina Gong1,2, Xilin Su3, and Feng Yun1,2 1Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 3Shaanxi Supernova Lighting Technology Co., Ltd, Xi’an, Shaanxi 710077, P. R. China TuGP78 Photoluminescence Investigation of a InGaN Multiple Quantum Well Structure Grown on the Semi-Polar (112-2) Facet of GaN Zhiqin Lv 1,4, Lirong Huang2,4, Qiang Lv3,4, and Zhiyin Gan1,4* 1School of Mechanical Science and Engineering, Huazhong University of Science and Technology, China 2School of optical and electronic information, Huazhong University of Science and Technology,China 3School of electrical and electronic engineering, Wuhan Polytechnic University, China 4Wuhan National Laboratory for Optoelectronics, China TuGP79 Annealing Impact on Nitride Based Heterostructures Lars Grieger1, Zhaohui Bao and Joachim Woitok1 1PANalytical B.V., The Netherlands TuGP80 Correlation between Deep-Level Optical Spectroscopy and Cathodoluminescence on Pits Formed on Surface of GaInN Films N. Toyomitsu1,2, Y.Harada3, J.Wang2, L.Sang2,4, T.sekiguchi2, T. Yamaguchi1, T.Honda1, Y. Nakano5, and M. Sumiya2,4 1Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Japan 2Wide Bandgap Group, National Institute for Materials Science (NIMS), Japan 3Hosei University, Japan 4Japan Science and Technology Agency (JST-ALCA), Japan 5Chubu University, Japan TuGP81 Defects in N-Rich and In-Rich InxGa1-XN; In Composition Dependence Emre Gür1, Fatih Akyol,2, Sriram Krishnamoorthy2, Siddharth Rajan2 and Steven A. Ringel2 1Department of Physics, Faculty of Science, Atatürk University, Erzurum, 25240, TURKEY 2Department of Electrical & Computer Engineering, The Ohio State University, Columbus, 43210, OH, USA TuGP82 Optical and Structural Properties of Self-Organized GaN/InGaN Microrod-Based Core/Shell Heterostructures Grown on Si (111) by MOCVD Bartosz Foltynski1, Marcus Müller2, Gyorgy Zoltan Radnoczi3, Christoph Giesen1, Anja Dempewolf2, Frank Bertram2, Béla Pécz3, Jürgen Christen2, and Michael Heuken1 1AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany 2Otto-von-Guericke-University Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany 3Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary TuGP83 Phase Separation, Structural Quality, and Optoelectronic Properties of InGaN Films in the Entire Compositional Range Grown by Rf-MBE E. Papadomanolaki1, C. Bazioti2, S.A. Kazazis1, M. Androulidaki3, K. Tsagaraki3, A. Georgakilas1,3, G. P. Dimitrakopulos2 and E. Iliopoulos1,3 1Physics Department, University of Crete, Heraklion, Greece 2Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece 3Micro/Nano-Electronics Research Group, IESL-FORTH, Heraklion, Greece TuGP84 MOVPE Growth and Device Fabrication of Thick N+-P InGaN with in Composition of 0.3 and No Phase Separation at 600 ºC Kazuki Kodama1,2, Hiroyuki Nomura1,2, Naoteru Shigekawa3, Akio Yamamoto1,2, and Masaaki Kuzuhara1 1University of Fukui, Japan 2JST-CREST, Japan 3Osaka City University, Japan TuGP86 InGaN/GaN Quantum Dot Green Laser Grown by Metal Organic Chemical Vapor Deposition Di Yang, Lai Wang*, ZhiBiao Hao and Yi Luo Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People’s Republic of China TuGP87 Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core-Shell Nanorods E.D. Le Boulbar1,2, P.R. Edwards3, S. Hosseini Vajargah4, I. Griffiths5, I. Gîrgel1, P.-M. Coulon1, D.Cherns5, R.W. Martin3, C.J. Humphreys4, C.R. Bowen2, D.W.E Allsopp1 and P.A. Shields1 1Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK 2Department of Mechanical Engineering, University of Bath, BA2 7AY, UK 3Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK 4Department of Materials Science and Metallurgy, University of Cambridge, CB3 0FS, UK 5Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK TuGP88 The Influence of In0.04Ga0.96N Insert Barrier Layer on the GaN Based Multiple Quantum Wells Green Light-Emitting Diodes Minyan Zhang1,2, Yufeng Li2, Xilin Su 3, Wen Ding2, Ye Zhang2, Maofeng Guo2, Lungang Feng 2, Qiang Li 2 , Xun Hou1,2 and Feng Yun1,2 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P.R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P.R. China 3Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710077, P.R. China TuGP89 Optical Enhancement of GaN-Based Epilayers Grown on Serpentine Channel Patterned Sapphire Substrate by Selective Lateral Epitaxy Qingbin Ji1, Lei Li1, Wei Zhang2, Jia Wang2, Tongxing Yan1, Binran Shen1, Yahong Xie2 and Xiaodong Hu1,* 1School of Physics, Peking University, China 2Department of Materials Science and Engineering, University of California Los Angeles, USA TuGP90 Growth and Properties of Non-Polar GaN Grown on Two Inch m-Plane Sapphire Substrate Using LT-AlN Buffer Layer M. Adreen1*, A. Shuhaimi1*, Omar A.Fadhil1, A. Kamarundzaman2, N. Zainal2, A. Ariff2 1Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia 2Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Pulau Pinang, Malaysia TuGP91 Optimization of Semipolar GaN Nucleation Layer and Buffer Layer GaN Grown on m-Plane Sapphire Using MOCVD Al-Zuhairi Omar 1, Ahmad Shuhaimi1, Adreen Azman1, Anas Kamarundzaman1 1Low Dimensional Materials Research Centre (LDMRC), Universiti Malaya, 50603 Kuala Lumpur, Malaysia TuGP92 Control of Spontaneous Polarity Inversion: m-Oriented GaN Twins Grown on Patterned m-Plane Sapphire Substrates Dongsoo Jang, Hansub Yoon, Miyeon Jue, and Chinkyo Kim Dept. of Physics, Kyung Hee University, 26 Kyunghee-daero, Dongdaemun-gu, Seoul, Korea TuGP93 Homoepitaxial GaN Growth on Non-Polar and Semi-Polar Seeds by Hydride Vapor Phase Epitaxy and High Nitrogen Pressure Solution Methods Mikolaj Amilusik1,2, Tomasz Sochacki1,2, Boleslaw Lucznik1,2, Michal Fijalkowski1, Malgorzata Iwinska1, Janusz L. Weyher1, Bogdan Sadovyi1,3, Izabella Grzegory1, and Michal Bockowski1,2 1Institute of High Pressure Physics PAS, Sokolowska 29/37,01-142 Warsaw, Poland 2TopGaN Sp. z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland 3Department of Physics, Ivan Franko National University of Lviv, Dragomanova st., 50, Lviv UA 9005, Ukraine TuGP94 Non Polar GaN Grown on ZnO Substrates: a Comparison between a-Plane (11-20) and m-Plane ((10-10) Growth A. Ogereau1,2, J. Brault1, Y. Xia1,2, B. Damilano1, M. Leroux1, M.Nemoz1, P. Vennéguès1, M. Al Khalfioui1,2, M. Teisseire1, J. M. ChaUVeau1,2 1CRHEA-CNRS, Rue Bernard Grégory, 06560 Valbonne, France 22 : Université de Nice Sophia-Antipolis, 06103 Nice, France TuGP95 Semipolar (11-22) InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown on Nanosized SiNx Interlayer and SiO2 Mask Using Metal Organic Chemical Vapor Epitaxy Jongjin Jang, Kyuseung Lee, Daehong Min, Jaehwan Kim, Sooryong Chae, Gyungbae Lee and Okhyun Nam* Convergence Center for Advanced Nano Semiconductors, Department of Nano-optical Engineering, Korea Polytechnic University, Siheung 429-93, Korea TuGP96 Properties of Semipolar GaN p-Type Layers - from Background Doping to Metal Contact Resistance Ewa Grzanka1,2, Marcin Sarzynski1,2, Elzbieta Litwin-Staszewska1, Jan Weyher1,2, Szymon Grzanka1,2, Robert Czernecki1,2, Michał Leszczynski1,2, Robert Kucharski3, Marta Sawicka1,2, Czeslaw Skierbiszewski1,2, Tadeusz Suski1, Piotr Perlin1,2 1Institute of High Pressure Physics, Polish Academy of Sciences, Poland 2TopGaN Ltd., Poland 3Ammono, Poland TuGP97 Overgrowth of High-Quality GaN by Multi-Times Silica Microspheres Mask Ming Xiao, Jincheng Zhang*, Hengsheng Shan and Yue hao Key Lab of Wide Band-Gap Semiconductor Technology, School of microelectronic, Xidian University, China TuGP98 Towards Industralisation of GaN-On-Si Based High Brightness Blue LEDs Liyang Zhang, Wei SiN Tan, Simon Westwater, Antoine Pujol, Andrea Pinos, Samir Mezouari, Kevin Stribley, John Whiteman, John Shannon and Keith Strickland Plessey Semiconductors Ltd, Tamerton Road, Plymouth, PL6 7BQ, UK TuGP99 p-Type GaN Achieved via Zn Diffusion from the ZnO Buffer Layer on Si Substrates Cheng Han Wu1 and Kun-Yu Lai1,* 1Department of Optics and Photonics, National Central University, Chung-Li 320, Taiwan, Republic of China TuGP100 Adsorption and Diffusion of Al, Ga, In Atoms on Silicon (111) Surface: Car–Parrinello Calculations Han Yan1,3, Pei Wang3, Rongjun Zhang3 and Zhiyin Gan2,3* 1School of Mechanical and Electronic Engineering, Wuhan University of Technology, Wuhan, China 2School of Mechanical Science and Engineering, Huazhong University of Science & Technology, Wuhan, China 3Real Faith Semiconductor Equipment Co.. Ltd., Foshan, China TuGP101 Influence of Surface Migration and Vapor-Phase Diffusion of Ga Species on GaN Selective Area Growth along Narrow Stripes with Large Spacing on Si (111) Substrate Xiaobiao Han, Hui Luo, Jie Chen, Weijie Chen, Minggang Liu, Yibin Yang, Jiali Lin, Qiang Liao, Yunling Qiu, Yinsong Chen, Zhisheng Wu, Yang Liu, and Baijun Zhang* School of Physics and Engineering, Sun Yat-sen University, China TuGP102 Growth of Compressively-Strained GaN Films on Si (111) Substrates with Thick AlGaN Transition and AlGaN Superlattice Buffer Layers Lei Pan, Jinyu Ni, Xun Dong, Zhonghui Li, Daqing Peng, Chuanhao Li, Xinxin Yu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China TuGP103 InGaN Layers, Nanowalls and Nanocolumns Grown on Si for Solar Water Splitting Pavel Aseev1, Paul Eduardo David Soto Rodríguez1, Naveed ul Hassan Alvi1, Ameed ul Hassan Alvi2, Waheed ul Hassan Alvi3, Žarko Gačević1, Richard Nötzel4 and Enrique Calleja1 1ISOM, Universidad Politécnica de Madrid, Spain 2Department of Physics, University of Agriculture, 38000 Faisalabad, Pakistan 3Department of Chemistry, Bahauddin Zakariya University, 60000 Multan, Pakistan 4L L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Italy TuGP104 Comparison of GaN Films Grown on Silicon (111) and Silicon (100) Substrates by Plused Laser Deposition Wei-Kai Wang1, Shih-Yung Huang2, Ming-Chien Jiang3, Ray-Hua Horng3 and Dong-Sing Wuu1 1Department of Materials Science and Engineering, Da-Yeh University, Changhua, Taiwan, R.O.C 2Department of Industrial Engineering and Management, Da-Yeh University, Changhua, Taiwan, R.O.C 3Graduate Institute of Precision Engineering, National Chung HSing University, Taichung,Taiwan, R.O.C TuGP105 High Quality AlGaN/GaN HEMT Structure Fabricated on 200 mm Si Wafer by Fast Wafer Rotating Single Wafer MOCVD Kiyotaka Miyano, Hideshi Takahashi, Yasushi Iyechika and Yuusuke Sato TFW Equipment Engineering Department, NuFlare Technology, Inc., Japan TuGP106 Control of Uniformity and Phase Purity of BGaN on AlN/Si Substrates Using Nanoselective Area Growth S. Sundaram1, X. Li1,2, Y. El Gmili1, R. Puybaret1,2, K. Pantzas3, G. Patriarche3, P.L. Voss1,2, J.P. Salvestrini4, and A. Ougazzaden1,2 1CNRS, UMI 2958 Georgia Tech-CNRS, 2 Rue Marconi 57070 Metz, France 2School of Electrical and Computer Engineering, Georgia Institute of Technology, GT Lorraine, 57070, Metz, France 3CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis, France 4Universite de Lorraine, CentraleSupelec, LMOPS, EA 4423, 2 rue E. Belin 57070 Metz, France TuGP107 Influence of the Carbon-Doping on the Strain-State of AlGaN/GaN Heterostructure on 4-in. Si Substrate Zijun Chen1, Yiqiang Ni1, Deqiu Zhou1, Yue Zheng1, Zhiyuan He1, Fan Yang1, Yao Yao1, Guilin Zhou1, Zhen Shen1, Jian Zhong1, Zhisheng Wu1,3, Baijun Zhang1,3*, Yang Liu1,2 1School of Physics and Engineering, 2Institute of Power Electronics and Control Technology, 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-G Gang-Xi Rd. 135, 510275 Guangzhou, People’s Republic of China TuGP108 Gallium Nitride Morphology Control on V-Groove Patterned Silicon (100) Substrate by Controlling Orientation of Substrate to MOCVD Gas Flow Antwi, KK Ansah1,2, Liu Hongfei1,2, Li Shiju1,2 and Chua Soo Jin1,2 1National University of Singapore, 21 Lower Kent Ridge Road, 119077, Singapore 2Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore TuGP109 Strain Study of GaN on Si-Based Substrates Mante N.1,2, Feuillet G.1,2, Bernier N.1,2, Delaye V.1,2, RoUVière J-L.1,3, Cordier Y.4, FraysSiNet E.4, Semond F.4, Leroux M.4, Vennéguès P.4. 1Univ. Grenoble Alpes, F-38000 Grenoble, France. 2CEA, LETI, Minatec Campus, F-38054 Grenoble, France. 3CEA, INAC, Minatec Campus, F-38054 Grenoble, France. 4CRHEA-CNRS, rue Bernard Gregory, F-06560 Valbonne. TuGP110 Rational Synthesis, Defect Controlling and Optoelectronic Properties of GaN Nanostructures Baodan Baodan Liu* and Xin Jiang Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research ((IMR) Chinese Academy of Sciences (CAS) TuGP111 Growth Characteristics and Optical Properties of InN Grown on Nanoporous GaN Templates Ian P SEETOH1 and Soo Jin CHUA1,2 1Singapore-MIT Alliance, National University of Singapore, Singapore 2Department of Electrical and Computer Engineering, National University of Singapore, Singapore TuGP112 Epitaxial Growth of AlN Nano-Pyramids on Powder AlN Substrates Ming-Jui Lee1, Kun-Yu Lai1,*, Wei-Ting Lin2, Sheng-Hui Chen1, Sung-Cheng Hu3, Wan-Xuan Peng3, Yung-Tien Lu3 1Department of Optics and Photonics, National Central University, Taiwan, Republic of China 2Graduate Institute of Energy Engineering, National Central University, Taiwan, Republic of China 3National Chung-Shan Institute of Science & Technology, Taiwan, Republic of China TuGP113 Ultrathin (< 5 nm) Large Diameter Al(In)N Nanotubes: a Structural Investigation Catherine Bougerol1,2, Christophe Durand1,3, Jean François Carlin4, Raphaël Butté4, Joël Eymery1,3, Nicolas Grandjean4 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 3CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 4Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland TuGP114 Dislocation-Free c-Plane GaN Platelets Based on GaN Nanowires Zhaoxia Bi1, David Lindgren1, Kristian Storm1, Rafal Ciechonski3, Maryam Khalilian1, Anders Gustafsson1, Bo Monemar1, Lars Samuelson1,2,3 and B. Jonas Ohlsson1,2,3 1Solid State Physics/Nanometer Structure Consortium (nmC@LU), Lund University, Box 118, S-221 00 Lund, Sweden 2QuNano AB, Scheelevägen 22, S-223 63 Lund, Sweden 3Glo AB, Ideon Science Park, Scheelevägen 17, S-223 70 Lund, Sweden TuGP115 Raman Scattering of Polar and Nonpolar GaN Nanowires by Metal Organic Chemical Vapor Deposition Teng Jiang, Jincheng Zhang*, Shengrui Xu and Yue Hao School of Microelectronics, Xidian University, China TuGP116 Selective GaN Growth on Amorphous Layer by Combined Epitaxy with MBE and MOCVD Si-Young Bae1, Jung-Wook Min2, Byung Oh Jung1, Kaddour Lekhal1, Dong-Seon Lee2, Yong-Tak Lee2, Yoshio Honda1, and Hiroshi Amano1,3 1Department of Electrical Engineering and Computer Science, Nagoya University, Japan 2School of Information and Communications, Gwangju Institute of Science and Technology, Korea 3Akasaki Research Center, Nagoya University, Japan TuGP117 Growth and Structural Characterization of InGaN/GaN Nanowire Heterostructures Xin Zhang1,2,3, Benedikt Haas1,4, Jean-luc RoUVière1,4, Catherine Bougerol1,5, Bruno Gayral1,3, and Bruno Daudin1,3 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2ALEDIA-MINATEC, 17 rue des martyrs, F-38054 Grenoble, France 3CEA, INAC-SP2M, "Nanophysics and semiconductors" group, F-38000 Grenoble, France 4CEA, INAC-SP2M, LEMMA group, F-38000 Grenoble, France 5CNRS, Institut Néel, "Nanophysics and semiconductors" group, F-38000 Grenoble, France TuGP118 Morphology Evolution of GaN Nanorods by Selective Area Growth from Randomly Distributed Openings Peng Ren, Binglei Fu, Ning Zhang, Bin Xue, Zhe Liu, Junxi Wang R& D Center for Semiconductor Lighting, Institute of semiconductors, CAS, China TuGP119 Investigation of the Nucleation Mechanism and Process of GaN Layers Epitaxial Growth on Nano-Patterned Sapphire Substrates Hao Liu1,2, Yufeng Li1,2, Xilin Su3, Wen Ding1,2, Han Xiong1,2, Shuai Wang1,2, Lungang Feng1,2, Zhina Gong1,2, Jiangteng Wang1,2, Feng Yun1,2 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 3Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710049, P. R. China TuGP120 Wet Thermal Oxidation and Optical Characteristics of Nanoporous GaN SiNjae Kim1, Jin-Ho Kang1, and Sang-Wan Ryu1,2 1Department of Physics, Chonnam National University, Gwangju 500-757, Korea 2Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea TuGP121 Monolithic White Light-Emitting Diode Using GaN Nanostructure Keun Man Song1, Do-hyun Kim1,2, Jongmin Kim1, Chu-young Cho1, Je-Hyuk Choi1, Jin-sub Park2 1Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770, Korea 2Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea TuGP122 The Growth of GaN:Mn Nanorods by Metal Organic Vapour Phase Epitaxy Ji Cheng1, Shengxiang Jiang1, Junze Li1, Haiying Xing3, Zhu Rui2, Zhijian Yang1, Cunda Wang1, Tongjun Yu1, Guoyi Zhang1 1Research Center for Wide Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, 100871 Beijing, PR China 2Electron Microscopy Laboratory, Department of Physics, Peking University, Beijing 100871, PR China 3School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, PR China TuGP123 Comparison of Intentional and Unintentional Si (111) Nitridation Effects on the Interface and Properties of Spontaneously Grown GaN Nanowires S. Eftychis1, J. Kruse1,2, K. Tsagaraki2, M. Androulidaki2, T. Koukoula3,Th. Kehagias3, Ph. Komninou3 and A. Georgakilas1,2 1Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece 2Microelectronics Research Group, IESL/FORTH, P.O. Box 1385, 71110 Heraklion, Greece 3Physics Department, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece TuGP125 Controlled Growth of Ultra-Dense Defect Free AlN Nanorods Arrays by Catalyst Free MOVPE Michele Conroy1,2,3,4*, Vitaly Zubialevich1, Haoning Li1,3, Sally O’Donoghue1,2, Nikolay Petkov1,4, Justin D Holmes1,2,4, Peter J Parbrook1,3 1Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland. 2Department of Chemistry, University College Cork, Cork, Ireland 3School of Engineering, University College Cork, Cork, Ireland 4CRANN, Trinity College Dublin, Dublin, Ireland TuGP126 Influence of Silane Flux on the Seclective-Area Growth of GaN Nanorods and GaN/InGaN Core-Shell Quantum Wells Junze Li1, Zhizhong Chen1*, Qianqian Jiao1, Yulong Feng1, Shuang jiang1, Yifan Chen1, Tongjun Yu1, Shunfeng Li2, Guoyi Zhang1,2 1State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2Dongguan Institute of Optoelectronics, Peking University, Bldg No.1, Technology & Innovation Park Songshanhu, 523808, Dongguan, China TuGP127 GaN Nanowire Arrays by a Metal-Assisted Chemical Etching Method K. C. Wang, G. D. Yuan*, H. X. Lu, J. M. Li 1Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences 2State Key Laboratory of Solid State Lighting 3Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application TuGP128 Numerical Study on the Effect of Inlet Temperature to GaN MOCVD Growth Ran Zuo1, Zong-qi Wang1, Peng Chen2, Guoyi Zhang3 1School of Energy and Power Engineering, Jiangsu University, Zhenjiang, China 2School of Electronic Science and Engineering, Nanjing University, Nanjing, China 3School of Physics, Peking University, China TuGP129 Surface Initial Growth Mechanism on GaN MOVPE Growth Xiaolong Xin1, Ran Zuo1, Yuzhen Tong2, Guoyi Zhang2 1School of Energy and Power Engineering, Jiangsu University, Zhenjiang, China 2School of Physics, Peking University, China TuGP130 Design of Distributed Bragg Reflectors for Light Emitting Diode Structure Pengchong Li, Mingzhe Liu, Yuantao Zhang*, Baolin Zhang*, and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China TuGP131 Polarity of InN on GaN/Sapphire Grown by Metal Organic Chemical Vapor Deposition Fan Yang, Xu Han, Yuantao Zhang*, Baolin Zhang and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China TuGP132 Growth of N-Polar InN Films by Pulsed Metalorganic Vapor Phase Epitaxy Xu Han, Fan Yang, Yuantao Zhang*, Baolin Zhang, and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China TuGP133 Growth of High Quality N-Polar n-GaN on c-Face n-SiC Substrates for Vertical Conducting Devices Gaoqiang Deng, Zhen Huang, Baozhu Li, Yuantao Zhang*, Baolin Zhang, and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China TuGP134 Measurement and Feedback Control of Cp2Mg Flux with a High Precision Acoustic Sensor for GaN-Based LED Manufacturing Wei Zhang1, Soo Min Lee1, Scott Maxwell1, Arindam SiNharoy2, Don Sorita2, Ray Logue2, Christopher Morath2, and George D. Papasouliotis1 1Veeco MOCVD, 394 Elizabeth Avenue, Somerset, NJ, USA 08873 2Veeco Flow Technologies, 41 Page Park Drive, Poughkeepsie, NY USA 12603 TuGP135 Epitaxial Lateral Overgrowth of a Thin GaN Layer with a Graphene Mask by MOCVD Jun-Yeob Lee1, Jung-Hong Min1, Mun-Do Park1, Woo-Lim Jeong1, Duk-Jo Kong1, Sang-Bae Choi1 and Dong-Seon Lee1 1School of Information and Communications, Gwangju Institute of Science and Technology, Korea TuGP136 The Effect of Growth Orientation on Ferromagnetism Enhancement of GaN:Mn Ji Cheng1, Shengxiang Jiang1, Haiying Xing3, Zhang Yan1, Zhu Rui2, Zhijian Yang1, Cunda Wang1, Tongjun Yu1, Guoyi Zhang1 1Research Center for Wide Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, 100871 Beijing, PR China 2Electron Microscopy Laboratory, Department of Physics, Peking University, Beijing 100871, PR China 3School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, PR China TuGP137 III-N MOVPE Overgrowth, Material Quality and LED Structures on GaNoS and GaNoMo Advanced Substrates A. Dussaigne1, P. Ferret1, R. Obrecht1, Q. Lalauze1, R. Caulmiloné2, P. Guénard2 and F. Lévy1 1CEA-LETI, Minatec Campus, Grenoble, France 2Soitec, Bernin, France TuGP138 Direct Synthesis of Graphene on Gallium Nitride Substrate by Low Pressure Chemical Vapor Deposition Yu Xu1, Shunyu He2,3, Lin Qi2,3, Zongyao Li2,3, Bing Cao2,3, Ke Xu1* 1Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P.R. China 2College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, P.R. China 3Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, P.R. China TuGP139 Three-Dimensional GaN Annular Structure with Hidden Facets Using Chemical Wet Etching Method Young-Chul Sim, Seung-Hyuk Lim, and Yong-Hoon Cho* Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea TuGP140 Thermal Stability of and GaN Growth by MOVPE on Ga2O3 Substrates Ding Li1, Veit Hoffmann1, Eberhard Richter1, Thomas Tessaro1, Zbigniew Galazka2, Markus Weyers1, and Günther Tränkle1,2 1Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany 2Leibniz-Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany TuGP141 Crystal Growth and Optical Properties of Polycrystalline GaN on Quartz Glasses Ping Bo An1, Shuo Zhang1, Li Xiao Zhao1, Hong Xi Lu1, Jun Xi Wang1, Jin Min Li1 1Institute of semiconductors, CAS TuGP142 Fabrication of GaN Quantum Dots Using Ga Droplet Epitaxy and Thermal Annealing by Metal Organic Chemical Vapor Deposition Zhiqiang Qi, Yanyan Fang, Changqing Chen, Jiangnan Dai and Zhihao Wu Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. TuGP143 Microchannel Epitaxy of GaN by Liquid Phase Electroepitaxy Using Mesa-Shaped Substrate Muneki Iwakawa, Daisuke Kambayashi, Yousuke Mizuno, Hiroyuki Takakura, Masafumi Tomita, Takahiro Maruyama and Shigeya Naritsuka Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan TuGP144 Dependence of Preferred Orientation of GaN on Patterned-Hole Size of m-Plane Sapphire Substrates Miyeon Jue, Hansub Yoon, Dongsoo Jang, and Chinkyo Kim Dept. of Physics, Kyung Hee University, 26 Kyunghee-daero, Dongdaemun-gu,Seoul, Korea TuGP145 Effect of Surface Treatment on the Reduction of Bowing in Freestanding GaN Jinwon Gim1,3, Hoki Son1, Dae-woo Jeon1, Jin-Ho Kim1, Mijai Lee1, Tae-young Lim1, Jonghee Hwang1, Jung young Jung2, Hae-Kon Oh2, Young-Jun Choi2, Hae-yong Lee2 and Dae-ho Yoon3 1Korea Insititute of Ceramic Engineering & Technology (KICET), Korea 2LumiGNtech Co., Ltd. Korea 3School of Advanced Materials Science & Engineering, Sungkyunkwan University, Korea TuGP146 Multi-Microscopy Techniques for the Investigation of Fully Coalesced Boundaries in GaN T. J. O’Hanlon*, F. C.-P. Massabuau and R. A. Oliver Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom TuGP147 GaN-On-SiC Epitaxial Quality and Stress State Improved by in-situ SiNx Interlayer Zhen Huang, Gaoqiang Deng, Baozhu Li, Yuantao Zhang*, Baolin Zhang, and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China TuGP148 High-Resistance GaN-Based Buffer Layers Grown by a Polarization Doping Method Lian Zhang, Yun Zhang*, Hongxi Lu, Junxi Wang and Jinmin Li Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China TuGP149 Mg Doping Study in GaN under Nitrogen Environment Long Yan, Ling Li, Heng Xu, Yuantao Zhang*, Baolin Zhang and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University TuGP150 Photoluminescence of BGaN Epitaxial Layers Grown on Sapphire and SiC Substrates with GaN and AlN Buffer Layers G. Tamulaitis1, A. Kadys1, J. Jurkevičius1, J. Mickevičius1, T. Malinauskas1, A. Vaitkevičius1, S. Stanionytė2 1Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Lithuania 2Center for Physical Sciences and Technology, Lithuania TuGP151 In Situ Stress Measurements during Direct MOCVD Growth of GaN on SiC Zakaria Y. Al Balushi1 and Joan M. Redwing1,2 1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA; 2Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA TuGP152 Epitaxial Growth of GaN on Ultra-Thin Al2O3 Membranes as Compliant Substrates Daeyoung Moon1, Jeonghwan Jang1, Daehan Choi1, In-Su Shin1, Donghyun Lee1, Dukkyu Bae2,3, Yongjo Park1,2,*, and Euijoon Yoon1,2,* 1Dept. of Materials Science and Engineering, Seoul National University, Korea 2Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Korea 3Hexa Solution Co., Ltd., Korea TuGP153 Energetics and Core Structure of the Undissociated Basal Screw Dislocation in Wurtzite GaN Imad Belabbas1*, Jun Chen2, Malcolm Heggie3, Christopher Latham3, Mark Rayson3 and Gérard Nouet4 1Equipe de Cristallographie et de Simulation des Matériaux. Laboratoire de Physico-Chimie des Matériaux et Catalyse. Faculté des Sciences Exactes, Université de Bejaia 06000, Algeria. 2CIMAP-Alençon, UMR6252, CNRS-CEA-ENSICAEN, Université de Caen Basse-Normandie, 114032, France. 3 Department of Chemistry, University of Surrey, Guildford, GU2 7XH, UK. 4CIMAP, 6 Boulevard du Maréchal Juin, 14050 Caen cedex, France. TuGP154 Synthesis of Zinc and Magnesium Doped GaN Powder from Ammonolysis of Gallium Metal Kun Qiao, Daisuke Tomida, Fukuma Sato, Chiaki Yokoyama Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan TuGP155 Highly Resistive GaN Crystals Obtained by Compensation of Oxygen Donors with Shallow and Deep Acceptors in Ammonobasic Method M. Zając1, R. Kucharski1, W. Korolczuk1, D. Grzybowska1, A. Puchalski1, J. Krupka2, J.L. Weyher3 1Ammono S.A., Prusa 2, 00-493 Warsaw, Poland 2Institute of Electronics and Microelectronics, Warsaw University of Technology, Koszykowa 75, 000662 Warsaw, Poland 3Insitute of High Pressure Physics, Polish Academy of Science, Sokołowska 29/37, 01-142 Warsaw, Poland TuBP156 Reduced Stark Shift in Three-Dimensionally Confined GaN/AlGaN Asymmetric Multi-Quantum Disks Young S. Park1, Christopher C. S. Chan2, Benjamin P. L. Reid2, Mark J. Holmes2, David M. Coles2, Jack A. Alexander-Webber2, Robin J. Nicholas2, Robert A. Taylor2, Seung-Woong Lee3, Woochul Yang3, and Hyunsik Im 1School of Natural Science, Ulsan National Institute of Science and technology (UNIST), Ulsan 689798, Korea 2Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK. 3Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Korea TuBP158 Simultaneous Analysis of Micro-Area Strain with Diffraction and X-Ray Fluorescence of Indium in GaN-Based Ridge Stripe Laser Using High-Resolution X-Ray Micro-Beam Toshiya Yokogawa1, Yasuhiko Imai2 and Shigeru Kimura2 1Department of Materials Science and Engineering, Yamaguchi University, Japan 2Japan Synchrotron Radiation Research Institute, Japan TuBP159 Optical Properties of Hexagonal Boron Nitride / III-Nitride Heterostructures Kevin Kahn1,2, D. Schmidt2, C. McGilvery1, Michelle Moram1, Andrivo Rusydi2 1Department of Materials, Imperial College London, United Kingdom 2Singapore Synchrotron Light Source, National University of Singapore, Singapore TuBP160 Impact of Polarity and GaN Capping on Electrical and Material Properties of InN Surfaces J. Kuzmík1, A. Adikimenakis2, M. Gregor3, M. Mičušík4, K. Eičo1, Š. Haščík1, A. Pleceník3, and A. Georgakilas2 1Institute of El. Eng., Slovak Academy of Sciences, Bratislava, Slovakia 2Institute of El. Structure and Lasers/FORTH, Heraklion, Greece 3Fac. of mathematics, physics and informatics, Comenius University, Bratislava, Slovakia 4Institute of Polymers, Slovak Academy of Sciences, Bratislava, Slovakia TuBP161 Interface Traps Behaviour in Al2O3/AlGaN/GaN Heterostructures at Low and High Frequencies Jozef Osvald Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia TuBP162 MBE-Grown InGaN Epilayers and Their Carrier Thermalization under Stimulated Emission at Room Temperature Xinhe Zheng1, Ye Chen2, Zhengjun Shang2, Sanjie Liu1, Yu Xia1, Jin Wang1, Caixia Hou1 1School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China 2Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, China TuBP163 Temperature Dependence of Carrier Dynamics in AlGaN Epitaxial Layers G. Tamulaitis1, S. Nargelas1, Ž. Podlipskas1, R. Aleksiejūnas1, J. Mickevičius1, J. Jurkevičius1, T. Saxena2, M. Shur2, M. Shatalov3, J. Yang3, and R. Gaska3 1Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Lithuania 2Department of ECE and CIE, Rensselaer Polytechnic Institute, USA 3Sensor Electronic Technology, Inc., USA TuBP164 Blue and Green LED Structures Investigated by Photoluminescence Frequency Domain Technique Ignas Reklaitis1, Rolandas Kudzma1, Roland Tomasiunas1, Ines Pietzonka2, Ilya Titkov3 and Edik Rafailov3 1Institute of Applied Research, Vilnius University, Sauletekio 10, 10223 Vilnius, Lithuania 2OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany 3Optoelectronics and Biomedical Photonics Group, AIPT, Aston University, Birmingham,B4 7ET,UK TuBP165 The Effect of Various Surface Treatments on the Structural and Luminescent Properties of GaN/InGaN MQW Nanopillar Structures A.Y. Polyakov1, E.B. Yakimov 1,2, Han-Su Cho3, In-Hwan Lee3, and K.D. Shcherbachev1 1National University of Science and Technology MISiS, Moscow, Russia 2 Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, Chernogolovka, Russia IPTM RAS, Chernogolvka, Russia 3School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju, Korea TuBP166 Movement of Basal Plane Dislocations in GaN during Electron Beam Irradiation E.B. Yakimov1,2, P. S. Vergeles2, A.Y. Polyakov1, In-Hwan Lee3 and S. J. Pearton4 1National University of Science and Technology MISiS, Moscow, Russia 2Institute of Microelectronics Technology RAS, Chernogolovka, Russia 3School of Advanced Materials Engineering and Research Center of Advanced Materials Development Chonbuk National University, Jeonju 561-756, South Korea 4University of Florida, Gainesville, Florida 32611, USA TuBP167 Measurement of Nitride Heterostructure Composition by Atom Probe Tomography: Metrological Problem L. Mancini1, D. Hernandez-Maldonado1, W. Lefebvre1, M. Gilbert1, F. Vurpillot1, C. Durand2, J. Eymery2, R. Butté3, J. F. Carlin3, N. Grandjean3, L. Rigutti1 1Groupe de Physique des Matériaux, UMR CNRS 6634, University and INSA of Rouen, Normandie University, 76800 St. Etienne du RoUVray, France 2CEA/CNRS/Université Joseph Fourier, CEA, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France 3Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland TuBP168 Excitonic Emission from A-Type Screw Dislocations in GaN Liverios Lymperakis1, Martin Albrecht2 and Jörg Neugebauer1 1Computational Materials Design Department, Max-Planck-Institut für Eisenforschung, Max-Planck-S Str. 1, 40237, Düsseldorf, Germany 2Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany TuBP169 Analysis of Built-in Potentials and Electronic Structures of Polar and Semi-Polar Dot-In-A-Well Systems S. Schulz1, and O. Marquardt2 1Photonics Theory Group, Tyndall National Institute, University College Cork, Ireland 2Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany TuBP170 Investigation of Possible Growth Mechanisms of Non-Polar (11-20) Self-Assembled Quantum Dots H. P. Springbett1, K. Nakanishi1, J. T. Griffiths1, T. J. Puchtler2, T. Zhu1, R. A. Oliver1 1Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge, CB3 00FS, United Kingdom 2Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom TuBP171 Inluence of Internal Electric Fields on Band Gaps in Short Period Nitride Based Superlattices I. Gorczyca1*, T. Suski1, N. E. Christensen2, and A. Svane2 1Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw, Poland 2Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark TuBP172 Determination of Built-in Electric Field of AlGaN/GaN Heterostructures Kun-Jia Hsieh1, Che-Wei Chang1, Der-Yuh Lin1, Tsung-Shine Ko1, Chia-Feng Lin2, Shang-Ju Tu3 1Department of Electronic Engineering, National Changhua University of Education, Changhua, Taiwan. 2Department of Materials Science and Engineering, National Chung HSing University, Taichung, Taiwan. 3HUGA Optotech Inc., Taichung, Taiwan. TuBP173 p-Doping of GaN Revisited: Evidence for Hoping Conduction Igor Yu. Evstratov and Sergey Yu, Karpov STR Group – Soft-Impact, Ltd., Russia TuBP174 InGaN/GaN Grown on ZnO Substrate Studied by Rutherford Backscattering and Simulation Shuyue Sun1, Lin Li2, Yongjing Guan1,*, Shude Yao2, Lingyu Wan1, Na Lu3, Ian T. Ferguson4, Zhe Chuan Feng1,* 1College of Physics Science & Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of optoelectronic materials & detection technology, Guangxi University, Nanning 530004, China 2State Key Laboratory of Nuclear Physics & Technology, Peking University, Beijing, 100871 China 3Department of Engineering Technology, University of North Carolina at Charlotte, Charlotte, NC 28223, USA 4Collegeof Engineering & Computing, Missouri University of Science & Technology, Rolla, MO 65409, USA TuBP175 Carrier Dynamics in InGaN/GaN LED Structures Grown by Pulsed Metal Organic Chemical Vapor Deposition S. Nargelas, A. Kadys, K. Nomeika, S. Miasojedovas, P. Ščajev, M. Dmukauskas, R. Aleksiejūnas, and K. Jarašiūnas Institute of Applied Research, Vilnius University, Lithuania TuBP176 Optical Investigation of InGaN/GaN LEDs Containing Prelayers Matthew J. Davies1, Simon Hammersley1, Philip Dawson1, Menno J. Kappers2, Rachel A. Oliver2 and Colin J. Humphreys2. 1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, UK. 2Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, UK. TuBP177 Optical Study of Quantum Efficiency in InGaN LED Structures with and without Short Period Superlattice Interlayer R. Aleksiejūnas, K. Nomeika, P. Ščajev, S. Miasojedovas, S. Nargelas, M. Dmukauskas, A. Kadys, and K. Jarašiūnas Institute of Applied Research, Vilnius University, Lithuania TuBP178 High Peak Fluence Excitation of Non-Polar InGaN Quantum Wells Matthew J. Davies1, Philip Dawson1, Simon Hammersley1, Samantha J. O. Hardman1, Darren M. Graham1, Tongtong Zhu2, Fabrice Oehler2, Menno J. Kappers2, Colin J. Humphreys2 and Rachel A. OOliver2. 1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, UK. 2Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, UK. TuBP179 Room Temperature Photoluminescence Efficiency of InGaN/GaN Qquantum Well Structures with Prelayers as a Function of Number of Wells George M. Christian1, Simon Hammersley1, Matthew J. Davies1, Phil Dawson1, Menno J. Kappers2, Fabien C-P. Massabuau2, Rachel A. Oliver2, Colin J. Humphreys2 1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK. 2Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, CB3 0FS, UK. TuBP180 Effect of Quantum Well Growth Temperature on the Optical Properties of Blue and Green InGaN/GaN Quantum Well Structures Simon Hammersley1, Menno J. Kappers2, Fabien C.-P. Massabuau2, Suman-Lata Sahonta2, Phil Dawson1, Rachel A. Oliver2, Colin J. Humphreys2 1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK. 2Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, CB3 0FS, UK. TuBP181 Modelling the Effect of Electron Blocking Layers on the Conduction and Valence Band Profiles in Multiple Quantum Well Light Emitting Diodes Simon Hammersley1, Phil Dawson1, Menno J. Kappers2, Rachel A. Oliver2, Colin J. Humphreys2 1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK. 2Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, CB3 0FS, UK. TuBP182 Topological Quantum Phase Transition in InN/GaN Quantum Wells under Hydrostatic Pressure Sławomir P. Łepkowski1 and Witold Bardyszewski2 1Institute of High Pressure Physics - Unipress, Polish Academy of Sciences, ul. Sokołowska 29, 01-142 Warsaw, Poland 2Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warszawa, Poland TuBP183 Investigating Efficiency Droop in InGaN/GaN Quantum Well Structures Using Ultrafast Timeresolved Terahertz and Photoluminescence Spectroscopy Aniela Rodak1, Ben F. Spencer1, Samantha J. O. Hardman1, Darren M. Graham1, Simon HHammersley1, Matthew J. Davies1, Phil Dawson1, Menno J. Kappers2, Rachel A. Oliver2, and Colin J. Humphreys2 1School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, United Kingdom 2Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom TuBP184 Ultrafast Carrier Dynamics in Fe-Doped GaN Tomas K. Uždavinys1, Saulius Marcinkevičius1, Kevin Udwary,2 and Jacob Leach2 1Department of Materials and Nano Physics, KTH Royal Institute of Technology, Stockholm, Sweden 2Kyma Technologies, Inc., Raleigh, NC, USA TuBP185 An Improved Differential Carrier Lifetime Measurement of LED Taking Photodetecter’s Parasitic Capacitance into Consideration Xiao Meng, Lai Wang1, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang and Hongtao Li Tsinghua National Laboratory for Information Science and Technology,Department of Electronic Engineering, Tsinghua University, Beijing 100084, China. TuBP186 Band Structure Engineering of Graphene Hexagonal Lattice Semiconductor Quantum Dots by Strain Juan Peng∗ and Peijian Chen Department of Physics, China University of Mining and Technology, Xuzhou, Jiangsu Province 221116, China TuBP187 Electronic States of Zinc-Blende Nitride Alloys Calculated by IQB Model Yuzo Shinozuka and Masato Oda Faculty of Systems Engineering, Wakayama University, Japan TuBP188 Mid-Infrared Absorption at the LO Phonon Energy of Metal/GaN-Composite Structure Yoshihiro Ishitani, Keiuke Hatta, Eito Takeuchi, Bei Ma, and Ken Morita Graduate School of Electrical and Electronic Engineering, Japan TuBP189 A Novel Structure to Enhance Ionization Coefficient Ratio in GaN Avalanche Photodiode Jiyuan Zheng, Lai Wang1, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang and Hongtao Li Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China. TuBP190 Calculating the Current Spreading Length of Mesa-Structure GaN-Based Light-Emitting Diodes Qiang Li1,2, Feng Yun1,2, Hong Wang2, Min-Yan Zhang2 , Yu-Feng Li1,2, and Wen Ding1 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China TuBP191 Below-Gap Emission Bands in Undoped GaN and Its Excitation Density Dependence M. Julkarnain1,2, T. Fukuda1, N. Kamata1 and Y. Arakawa3 1Graduate School of Science and Engineering, Saitama University, Japan 2Faculty of Engineering, University of Rajshahi, Bangladesh 3Institute of Industrial Science, University of Tokyo, Japan TuBP193 Comparison of Electrophysical Properties of N- and In-Polar Undoped and Mg-Doped InN Layers Grown by PA MBE Tatiana A. Komissarova1, Bowen Shen2, Ping Wang2, Kirill G. Belyaev1, Dmitry V. Nechaev1, Valentin N. Jmerik1, Petriina Paturi3, Xinqiang Wang2 and Sergey V. Ivanov1 1Ioffe Institute, St. Petersburg 194021, Russia 2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 3Wihuri Laboratory, Department of Physics and Astronomy, University of Turku, FIN-20014 Finland TuBP194 Stress-Induced Surface Morphology Variations in GaN-Based HEMT Structures Grown on 150 mm Diameter Si (111) Thirumaleshwara N. Bhat, Surani B. Dolmanan, Lakshmi K. Bera, and Sudhiranjan Tripathy Institute of Materials Research and Engineering, A*STAR, Singapore TuBP195 InGaN Quasi-Ternary Alloys Based on (InN)1/(GaN)4 Short-Period Superlattices Daichi Imai 1,2, Kazuhide Kusakabe 1,2, Ke Wang1,2, and Akihiko Yoshikawa 1-3 1Center for SMART Green Innovation Research and 2 JST-ALCA SC-PJ, Chiba Univ., Japan 3K Kogakuin Univ., Japan TuBP196 Contactless Electroreflectance Study of Sensitivity of Fermi Level on M-, Ga-, and N- Plane of GaN Surface to the Ambient Atmosphere R. Kudrawiec1, L. Janicki1, M. Ramirez Lopez1,2, M. Gladysiewicz1, J. Misiewicz1, G. Cywinski3, C. Chèze4, P. Wolny3, and C. Skierbiszewski3,4 1Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland 2Instituto Politécnico Nacional, UPIITA, av. I.P.N 2580, Gustavo A. Madero, la laguna ticoman, 07340, D.F. Mexico 3Institute of High Pressure Physics, Polish Academy of Science, Sokołowska 229/37, 01-142 Warsaw, Poland 4TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland TuBP197 Stokes Shift in (11-22) Green to Yellow Emitting Semi-Polar InGaN/GaN Multiple Quantum Wells Y. Zhang, R.M. Smith, B. Xu, Y. Hou, Y. Gong, and T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, UK TuBP198 Study of Excess Carrier Dynamics in Nonpolar InGaN/GaN Quantum Wells K. Gelžinytė1, R. Aleksiejūnas1, A. Alkauskas2, K. Jarašiūnas1, K. M. Kelchner3, L. Kurtizky3, S. Nakamura3, and J. S. Speck3 1Institute of Applied Research, Vilnius University, Saulėtekio Av. 9-III, Vilnius 10222, Lithuania 2Center for Physical Sciences and Technology, Goštauto 11, Vilnius 01108, Lithuania 3M Materials Department, University of California, Santa Barbara, CA 93106, USA TuBP199 Identification of BeGa in GaN with Positron Annihilation Vera Prozheeva, Ilja Makkonen, and Filip Tuomisto Department of Applied Physics, Aalto Univeristy, Finland TuBP200 InN Bandgap Determination in Low Electron Concentration Films M. Androulidaki1, A. Adikimenakis1, K. Tsagaraki1, S.A. Kazazis2, E. Iliopoulos1,2, A. Bairamis1,2, N.T. Pelekanos1,3 and A. Georgakilas1,2 1Microelectronics Research Group, IESL/FORTH, P.O. Box 1385, 71110 Heraklion, Greece 2Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece 3Materials Science and Tech. Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece TuBP201 Type-II In0.17Al0.83N/GaN Band Alignment: Experimental Evidence and Theoretical Interpretation J. M. Wang, F. J. Xu, W. An, X. Z. Li, J. Song, W. K. Ge, X. Q. Wang, N. Tang, Z. J. Yang, and B. Shen State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China TuBP202 Impact of Carrier Localization on Recombination Properties in Semipolar (2021) InGaN/GaN Quantum Wells Ruslan Ivanov1, Saulius Marcinkevičius1, Yuji Zhao2, Daniel L. Becerra2, Shuji Nakamura2, Steven P. DenBaars2, and James S. Speck2 1Department of Materials and Nano Physics, KTH Royal Institute of Technology, Stockholm, Sweden 2Materials Department, University of California, Santa Barbara, CA, USA TuBP203 Modes of Defect Introduction and Indium Distribution in InGaN Epilayers Grown by Molecular Beam Epitaxy G. P. Dimitrakopulos1, C. Bazioti1, E. Papadomanolaki2, Th. Kehagias1, T. Walther3, J. Smalc-Koziorowska4, E. Pavlidou1, Ph. Komninou1, Th. Karakostas1, and E. Iliopoulos2 1Physics Department, Aristotle University of Thessaloniki, GR 541 24, Thessaloniki, Greece 2Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion Crete, Greece; and Physics department, University of Crete, Heraklion Crete, Greece 3Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK 4Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland TuBP204 Dielectric Functions and Bowing Parameter of InGaN Alloys in the Entire Composition Range S. A. Kazazis1, E. Papadomanolaki1, M. Androulidaki 2, E. Iliopoulos1,2 1Physics Department, University of Crete, Heraklion, Greece 2Micro/Nano-Electronics Research Group, IESL-FORTH, Heraklion, Greece TuBP205 Rapid Thermal Annealing Effects on Polycrystalline InGaN Thin Films Deposited on Fused Silica Substrates S. A. Kazazis1, E. Papadomanolaki1, M. Androulidaki2, K. Tsagaraki2, A. Kostopoulos2, E. Aperathitis2 and E. Iliopoulos1,2 1Physics Department, University of Crete, Heraklion, Greece 2Micro/Nano-Electronics Research Group, IESL-FORTH, Heraklion, Greece TuBP206 Room-Temperature Vacuum Rabi Splitting in GaN/InGaN Core-Shell Microwires Su-Hyun Gong, Suk-Min Ko, Min-Ho Jang, and Yong-Hoon Cho* 1Department of Physics and KI for the NanoCentury, 2Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea TuBP207 Numerical Analysis of Ion Impurity Effect on Energy Relaxation Processes of Carriers and Excitons in GaN Bei Ma and Yoshihiro Ishitani Graduate School of Engineering, Chiba University, Japan TuBP208 Study of the Indium Fluctuations in InGaN Quantum Wells Dependence on Substrate Polarity L. Marona1, D. Schiavon1,2, G. Staszczak1, M. Baranowski3, R. Kudrawiec3, R. Kucharski4, P. Perlin1,2, T. Suski1 1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2TopGaN, Sokolowska 29/37, 01-142 Warsaw, Poland 3Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 550370, Poland, 4Ammono, Prusa 2, 00-493 Warsaw, Poland TuBP209 Micro-Structural Investigation of InGaAsN Lattice-Matched Films Grown on off-Angle Ge (001) Substrates by MOVPE Pornsiri Wanarattikan1, Sakuntam Sanorpim2, Somyod Denchitcharoen1, Visittapong Yordsri3, Chanchana Thanachayanont3, Kenjiro Uesugi4, Shigeyuki Kuboya4 and Kentaro Onabe4 1Department of Physics, Faculty of Science, King Mongkut’s University of Technology Thonburi, Thailand 2Department of Physics, Faculty of Science, Chulalongkorn University, Thailand 3National Metal and Materials Technology Center, Thailand 4Department of Advanced Materials Science, The University of Tokyo, Japan TuBP210 Optical Investigation of In and N Incorporation in InGaPN Alloys K. Mopoung 1*, S. Sanorpim1 and K. Onabe2 1Department of Physics, Faculty of science, Chulalongkorn University, Phyathai Rd., Pathumwan, Bangkok, 10330, Thailand 2Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba, 277-8561, Japan TuBP211 Pressure Induced Increase of Exciton –Phonon Interactions in a Wurtzite Quantum Wells H. Teisseyre1,2, A. Kamińska1, D. Jarosz1, A. Suchocki1, A. Kozanecki1, 1Institute of Physics, PAS, Al. Lotników 32/34,02-668 Warsaw Poland 2Institute of High Pressure Physics, PAS, Sokołowska 29/37,01-142 Warsaw Poland TuBP212 On the Emanation of Lattice Dislocations from Basal Stacking Faults in III-Nitride Heterostructures J. Smalc-Koziorowska1, C. Bazioti2, M. Albrecht3, and G. P. Dimitrakopulos2 1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland 2Physics Department, Aristotle University of Thessaloniki, GR54124 Thessaloniki, Greece 3Leibniz Institute for Crystal Growth, Max-Born Strasse 2, 12489 Berlin, Germany TuBP213 Microstructure of InxGa1-XN (X = 0.22 to 0.67) Films Grown by Metal-Modulated Epitaxy Y. O.Wei1, A. M. Fischer1, F. A. Ponce1, M. Moseley2, B. Gunning2, and W. A. Doolittle2 1Department of Physics, Arizona State University, USA 2School of Electrical and Computer Engineering, Georgia Institute of Technology, USA TuBP214 Modifying the Emission of InGaN/GaN MQW LED Devices Using Low Energy Electron Beam Irradiation M.N. Lockrey1, M. Wintrebert-Fouquet2 and M.R. Phillips1 1School of Mathematics and Physical Sciences, University of Technology Sydney Australia 2BluGlass Limited, 74 Asquith Street, Silverwater, Sydney Australia TuBP215 H-AlN: Expanding the Range of Applications of AlN through Its Scalability at the 2D Limit Renato B. dos Santos1,2, R. Rivelino1, F. de Brito Mota1, A. Kakanakova-Georgieva2, G. K. Gueorguiev2 1Instituto de Física, Universidade Federal da Bahia, Brazil 2Department of Physics, Chemistry and Biology (IFM), Linköping University, Sweden TuBP216 Investigation of the Compositional Dependence of the Threading Dislocation Inclination Angle in c-Plane AlGaN/AlN Heterostructures Wai Yuen Fu, Tse Yang Chang, Menno J. Kappers and Colin J. Humphreys Department of Materials Science & Metallurgy, University of Cambridge, United Kingdom TuBP217 GaN/AlN Quantum Dots Studied by Correlative Micro-Photoluminescence, Scanning Transmission Electron Microscopy and Atom Probe Tomography L. Mancini1, D. Hernandez-Maldonado1, W. Lefebvre1, F. Vurpillot1, A. Das2,3, E. Monroy2,3, L. Rigutti1 1Groupe de Physique des Matériaux, UMR CNRS 6634, University and INSA of Rouen, Normandie University, 76800 St. Etienne du RoUVray, France 2Université Grenoble-Alpes, 38000 Grenoble, France 3CEA, INAC-SP2M, 17 av. des Martyrs, 38000 Grenoble, France TuBP218 Energetics of Oxygen Incorporation at AlN (0001) Surface with n-Type and p-Type Jiaduo Zhu1, Jincheng Zhang1* and Yue Hao1 1State key laboratory of wide bandgap semiconductor technology, school of microelectronics, Xidian University 2 South Taibai Road, Xi’an, Shaanxi, China TuBP219 Strain Effects on Light Polarization of AlN Guilin Ji, Jinchai Li*, Wei Lin, and Junyong Kang Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China TuBP220 Model of Photoluminescence Temperature Dependence in GaN/AlN Quantum Dot Structures Ivan A. Aleksandrov, Vladimir G. Mansurov, and Konstantin S. Zhuravlev Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia TuBP221 Permanent Modification of Excess Carrier Lifetime and Diffusivity by Intense Laser Illumination in AlGaN R. Aleksiejūnas1, Ž. Podlipskas1, S. Nargelas1, J. Jurkevičius1, J. Mickevičius1, G. Tamulaitis1, A. Kadys1, M. S. Shur2, M. Shatalov3, J. Yang3, and R. Gaska3 1 Institute of Applied Research, Vilnius University, Lithuania 2Department of ECE and CIE, Rensselaer Polytechnic Institute, NY, USA 3Sensor Electronic Technology, Inc., SC, USA TuBP222 Optical Properties of GaN/AlN Multi-Quantum Wells Under High Hydrostatic Pressure: Experimental Investigations and ab Initio Study A. Kaminska1,2, P. Strak3, J. Borysiuk 1, J. Z. Domagala1, E. Grzanka3, M. Beeler4, K. Sakowski3, E. Monroy4 and S. Krukowski3,5 1Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland 2Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Dewajtis 5, 01-815 Warsaw, Poland 3Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland 4CEA-Grenoble, INAC-SP2M, 17 av des Martyrs, 38000 Grenoble, France 5Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland TuBP223 Investigation of the Dielectric Function of AlGaN Grown on Sapphire by MOCVD Deng Xie1, Zhi Ren Qiu2,*, Yujia Liu3, Zhen Zhang4, Yi Liu5, Xiong Zhang6, Ting Mei7, Lingyu Wan3, and Zhe Chuan Feng3 1Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 5510631, China 2State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China 3College of Physics Science & Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, Nanning 530004, China 4Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou 215123, China 5College of Physics Science & Technology, Shenzhen University, Shenzhen 518060, China 6Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China 7The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi’an 710072, China TuBP224 Angle-Resolved XPS Spectra of AlOx/AlN/GaN Structures Yohei Sugiura1,2, Tohru Honda1, Daiki Isono1, Tomohiro Yamaguchi1, Takeyoshi Onuma1 and Masataka Higashiwaki2 1Department of Applied Physics, Kogakuin University, Japan 2National Institute of Information and Communications Technology, Japan TuBP225 Deep-Ultraviolet Photoluminescence Studies of Near Band-Edge Transitions in AlN Grown by MOCVD Weiying Wang1, Guipeng Liu2, Yali Liu2, Peng Jin2, Fujun Xu1, Ning Tang1, Weikun Ge1, Bo Shen1 1School of Physics, Peking University, China 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,China TuBP226 Characterization of Green Band in Photoluminescence Spectra of Heavily Doped AlGaN:Si I .V. Osinnykh1,2, V. F. Plyusnin2,3, K. S. Zhuravlev1,2 1Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Russia 2Novosibirsk State University, Russia 3Voevodsky Institute of Chemical Kinetics and Combustion of the Siberian Branch of the Russian Academy of Sciences, Russia TuBP227 Band Structure Engineering of Mg-Doped Non-Planar AlGaN Sls Tongchang zheng1, Wei Lin1 and Junyong Kang1 1Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, P. R. China TuBP228 Discrepancy in the Composition Dependent Emission Wavelength of Non-Polar (11-20) InGaN Quantum Wells J. T. Griffiths1, F. Oehler1, F. Tang1, S. Zhang1, W. Y. Fu1, T. Zhu1, F. Massabuau1, S.D. Findlay2, C.L. Zheng3, J. Etheridge3, T. L. Martin4, P. A. J. Bagot4, M. P. Moody4, D. Sutherland5, P. Dawson5, M.J. Kappers1, C.J. Humphreys1, and R. A. Oliver1 1Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge, CB3 00FS, United Kingdom 2School of Physics and Astronomy, Monash University, Victoria 3800, Australia 3Monash Centre for Electron Microscopy, Monash University, Victoria 3800, Australia 4Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom 5School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, United Kingdom TuBP229 Probing Local Cathodoluminescence Lifetimes of InGaN/GaN Multi-Quantum Wells Grown on Bulk m-Plane Ammono GaN Tongtong Zhu1, David Gachet2, Fengzai Tang1, James T. Griffiths1, Fabrice Oehler1, Danny Sutherland3, Phil Dawson3, Menno J. Kappers1, and Rachel A. Oliver1 1Department of Material Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK 2Attolight AG, EPFL Innovation Park - Bâtiment D, CH-1015 Lausanne, Switzerland 3School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL TuBP230 Difference in Optical Polarization of InGaN Alloys Strained on a-Plane and m-Plane GaN Siyuan Zhang1, James T. Griffiths1, Danny Sutherland2, Matthew J. Davies2, Ying Cui3, Christoph Freysoldt3, Jörg Neugebauer3, Philip Dawson2, Colin J. Humphreys1, Rachel A. Oliver1 1Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom 2School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom 3Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf, Germany TuBP231 Kinetic-Limited Etching of Magnesium Doping Nitrogen Polar GaN by Potassium Hydroxide Solution Junyan Jiang, Chen Chi, Long Yan, Yuantao Zhang*, Baolin Zhang and Guotong Du State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, China TuBP232 Control of Anisotropic Strain and Optical Polarization Properties in Nonpolar m-Plane GaInN/GaN Quantum Wells Fedor Alexej Ketzer, Ernst Ronald Buß, Philipp Horenburg, Torsten Langer, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter Institute of Applied Physics, Braunschweig University of Technology, Germany TuBP233 From Three- to One-Dimensional Excitons in Spontaneously Formed GaN Nanowires Pierre Corfdir, Johannes K. Zettler, Christian Hauswald, Timur Flissikowski, Sergio Fernández-Garrido, Lutz Geelhaar, Holger T. Grahn, and Oliver Brandt Paul-Drude-Institut für Festkörpelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany TuBP234 Nanocathodoluminescence Spectral Imaging of the Influence of Si Doping on the Emission Energy of InGaN Quantum Wells J. T. Griffiths1, S. Zhang1, B. Rouet-LEDuc1, W. Y. Fu1, D. Zhu1,2, D. Wallis1,2, A. Howkins3, I. Boyd3, D. Stowe4, M. J. Kappers1, C. J. Humphreys1, and R. A. Oliver1 1Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge, CB3 00FS, United Kingdom 2Plessey Semiconductors, Tamerton Road, Plymouth, PL6 7BQ, United Kingdom 3Experimental Techniques Centre, Brunel University, Uxbridge, UB8 3PH, United Kingdom 4Gatan UK, 25 Nuffield Way, Abingdon, Oxon, OX14 1RL, United Kingdom TuBP235 Investigation of Excitonic Diffusion in InGaN/GaN Core-Shell Nanowires by Time Resolved Cathodoluminescence Gwénolé Jacopin1, Mehran Shahmohammadi1, Jean-Daniel GaNière1, Hezhi Zhang2, Rafal Ciechonski3, Giuliano Vescovi3, Olga Kryliouk4, Maria Tchernycheva2 and Benoit Deveaud1 1Laboratory of Quantum Optoelectronics, Ecole Polytechnique Fédérale de Lausanne ((EPFL),sanne, Switzerland 2Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud XI, 991405 Orsay cedex, France 3GLO AB, Ideon Science Park, Scheelevägen 17, S-223 70 Lund, Sweden 4.GLO-USA, 1225 Bordeaux Dr, Sunnyvale, CA, 94086, USA TuBP236 The Origin of 3.45 eV Luminescence in GaN Nanowires Thomas Auzelle1,2, Benedikt Haas1,2, Martien Den Hertog1,3, Jean-luc RoUVière 1,2, Bruno Daudin1,2 and Bruno Gayral1,2 1Univ. Grenoble Aples, INAC-SP2M, F-38000 Grenoble, Fance 2CEA, INAC-SP2M, F-38054 Grenoble, Fance 3CNRS, Institut Neel, F-38042 Grenoble, Fance TuBP237 Nano-Seed Growth to Enhance GaN:Mn Ferromagnetism Ji Cheng1, Shengxiang Jiang1, Junze Li1, Haiying Xing3, Zhang Yan1, Zhu Rui2, Zhijian Yang1, Cunda Wang1, Tongjun Yu1, Guoyi Zhang1 1Research Center for Wide Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, 100871 Beijing, PR China 2Electron Microscopy Laboratory, Department of Physics, Peking University, Beijing 100871, PR China 3School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, PR China TuBP238 Interfacial Structure of Self-Assembled GaN NWs Grown on Si (111) and R-Plane Sapphire Substrates Ph. Komninou1, T. Koukoula1, T. Kehagias1, A. Lotsari1, G.P. Dimitrakopulos1, J. Kioseoglou1, Th. Karakostas1, S. Eftychis2, A. Adikimenakis2, J. Kruse2, A. Georgakilas2 1Physics Department, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece 2Microelectronics Research Group, IESL, FORTH, P.O. Box 1385, GR-71110 Heraklion, and Physics Department, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Greece TuBP239 Strain-Composition Relationship of InxGa1-XN Nano-Disks and Nano-Dots Embedded in GaN Nanowires T. Koukoula1, Th. Pavloudis1, J. Kioseoglou1, Th. Kehagias1, G. P. Dimitrakopulos1, M. Eickhoff2, Ph. Komninou1 and Th. Karakostas1 1Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece 2Institute of Experimental Physics I, Justus-Liebig-University Giessen, D-35392 Giessen, Germany TuBP240 Two Carrier Localizations in GaN/AlGaN Multiquantum Wells Investigated by Temperature Dependent Photoluminescence Feng Wu1, Yang Li1, Wu Tian1, Jun Zhang1, Shuai Wang1, Jiangnan Dai1, Zhihao Wu1, Yanyan Fang1, Zhe Chuan Feng2, and Changqing Chen1,* 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China 2Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan September 2 Parallel Session A: Growth Session A1: GaN on Si Room: Convention Hall No. 2-I 8:30 –10:00 Chairs: Shangjr Gwo and Zhibiao Hao WeGI1 (invited) 8:30 - 9:00 3D GaN Nanowire Devices: Strategies for Solid State Lighting and Beyond A.Waag1,4,5, J.Hartmann1, Hao Zhou1, J.Ledig1,5, F.Steib1,5, M.Mohajerani1,5, H.- Feng Yu1,5, H.Wehmann1,4, D. Bichler2, B.Huckenbeck2, T.Schimpke1,3, M.Mandl3, A. Avramescu3, I. Stoll3, H.-J. Lugauer3, M. Strassburg3 1Inst. of Semiconductor Technology, Braunschweig University of Technology, GERMANY. 2OSRAM GmbH, Mittelstetter Weg 2, 86830 Schwabmünchen, GERMANY 3Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, GERMANY 4Epitaxy Competence Center, Hans-Sommer-Strasse 66, 38106 Braunschweig, GERMANY 5Laboratory of Emerging Nanometrology, Langer Kamp, 38106 Braunschweig, GERMANY WeGO2 9:00 - 9:15 Orientation-Controlled Growth of Horizontal and Inclined GaN Nanowires without Catalyst by Metal Organic Chemical Vapor Deposition Kyuseung Lee1, Sooryong Chae1, Jongjin Jang1, Daehong Min1, Jaehwan Kim1, Yang-Seok Yoo2, Yong-Hoon Cho2 and Okhyun Nam1 1Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Republic of Korea 2Department of Physics, KAIST Center for LED Research, and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea WeGO3 9:15 - 9:30 Dislocation-Filtering and Polarity in the Selective Area Growth of GaN Nanowires by Continuous-Flow MOVPE P. M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France WeGO4 9:30 - 9:45 Ultra-Long GaN Wires for Piezoelectric Applications Amine El Kacimi1, Emmanuelle Pauliac-Vaujour1, Joël Eymery2 1University Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France 2University Grenoble Alpes, CEA, INAC-SP2M, "Nanophysics and Semiconductors" group, F-38000 Grenoble, France WeGO5 9:45 - 10:00 Strong Correlation between Optical and Electrical Properties of Mg-Doped GaN Single Rods Grown by Metal- Organic Chemical Vapor Deposition Sunghan Choi1, Suk-Min Ko1, Yang-Seok Yoo1, Wonho Kim2, Yonghan Jeon2, Deokwon Seo2, Hyojung Moon2, Eunhyung Lee2, Sungwon David Roh2 and Yong-Hoon Cho1,* 1Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea 2Advanced Materials & Components Lab, R&D Center, LG Innotek, Seoul, Republic of Korea Coffee Break 10: 00 - 10:20 September 2 Parallel Session B: Basic Physics Session B7: Doping & Defects Room: Meeting Room 201 8:30 –10:00 Chairs: Akira Uedono and Sergey Ivanov WeBI1 (invited) 8:30 - 9:00 Fundamental Differences between Traditional III-V Compounds and Nitride Semiconductors Philomela Komninou1, Theodore D. Moustakas2 1Solid State Physics Section of the Physics Department, Aristotle University, Greece 2Department of Electrical and Computer Engineering, Department of Physics, Materials Science and Engineering Division, Photonics Center, Boston University, USA, WeBO2 9:00 - 9:15 Design of Shallow Acceptors in GaN through Zn-Mg and In-Mg Co-Doping: First Principle Calculation Zhiqiang Liu1, Xiaoyan Yi1, Binglei Fu1, Junxi Wang1, Jinmin Li1, Ian Ferguson2 1R&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. China 2Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte, 9201 University City Blvd., Charlotte, North Carolina 28223, USA WeBO3 9:15 - 9:30 Increased p-Type Conductivity of Mg-Doped GaN through Use of an Indium Surfactant Erin C. H. Kyle, Stephen W. Kaun, Erin C. Young, James S. Speck Materials Department, University of California, Santa Barbara, CA, 93106 USA WeBO4 9:30 - 9:45 Defect Reduction in (11-20) a-Plane Gallium Nitride via Self-Assembled Multilayers of Silica Nanospheres Tongtong Zhu1, Tao Ding1,2, Fengzai Tang1, Yisong Han1, Menno J. Kappers1, Stoyan Smoukov1, and Rachel A. Oliver1 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom 2Nanophotonics Centre, Cavendish Laboratory, University of Cambridge, CB3 0HE, United Kingdom WeBO5 9:45 - 10:00 Nanoscale Strain and Quantitative Chemical Analysis of Nitride Heterostructures: a Multitechnique Approach C. Bougerol1,2, B. Bonef1,4, B. Hass1,4, M. Beeler1,3, M. Lopez-Haro1,4, E. Robin1,4, PH Jouneau1,4, A. Grenier1,5, E. Bellet-Amalric1,3, E. Monroy1,3 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 3CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 4CEA, INAC-SP2M, LEMMA, F-38000 Grenoble, France 5CEA, LETI, F-38000 Grenoble, France Coffee Break 10: 00 - 10:20 September 2 Parallel Session C: Optical Devices Session C7: ISBT and DBR Room: Convention Hall No. 2-II 8:30 –10:00 Chairs:Julien Brault and JongHyeob Baek WeOI1 (invited) 8:30 - 9:00 Progress of THz Quantum Cascade Laser Using Nitride Semiconductor Hideki Hirayama1, Wataru Terashima1, Shiro Toyoda1,2 and Norihiko Kamata2 1RIKEN, 2-1 Hirosawa Wako Saitama 351-0198, Japan 2Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama, 338-8570, Japan WeOO2 9:00 - 9:15 GaN/AlN Nanowire Heterostructures for Intersubband Applications Jonas Lähnemann1, Mark Beeler1, Martien Den Hertog1, Pascal Hille2, Joël Bleuse1, Jörg Schörmann2, Maria de la Mata3, Jordi Arbiol3,4, Martin Eickhoff2, and Eva Monroy1 1Université Grenoble•Alpes, CEA•INAC•SP2M and CNRS•Institut Néel, 38054 Grenoble, France 2I. Physikalisches Institut, Justus•Liebig•Universität Gießen, 35392 Gießen, Germany 3Institut de Ciencia de Materials de Barcelona, ICMAB•CSIC, 08193 Barcelona, Catalonia, Spain 4ICREA and Institut Català de Nanociència i Nanotecnologia (ICN2), 08193 Barcelona, Catalonia, Spain WeOO3 9:15 - 9:30 Optical-Pumped Lasing Characteristics of InGaN MQW Nanocolumns on AlGaN DBR Shunsuke Ishizawa1, Kai Motoyama1 and Katsumi Kishino1,2 1Department of Engineering and Applied Science, Sophia University, Japan 2Sophia Nanotechnology Research Center, Japan WeOO4 9:30 - 9:45 Nanoporous GaN Distributed Bragg Reflector with Near-Unity (>99%) Reflectance Cheng Zhang, Sung Hyun Park and Jung Han * Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA WeOO5 9:45 - 10:00 Observation of Strong Exciton-Photon Coupling in Air/AlGaN DBR Microcavities Renchun Tao1, Munetaka Arita2, Satoshi Kako1, Kenji Kamide2, and Yasuhiko Arakawa1,2 1Institute for Industrial Science, The University of Tokyo, Tokyo, Japan 2NanoQuine, The University of Tokyo, Tokyo, Japan Coffee Break 10: 00 - 10:20 September 2 Parallel Session D: Electronic Devices Session D7: Normally-off HEMTs Room: Convention Hall No. 2-III 8:30 –10:00 Chairs: Huili(Grace) Xing and Dunjun Chen WeEI1 (invited) 8:30 - 9:00 Normally-Off GaN Power Transistors: from Lateral to Vertical Rongming Chu HRL Laboratories LLC,USA WeEO2 9:00 - 9:15 High Performance Integrated Enhancement/Depletion-Mode GaN MIS-HEMTs with High-Κ Dielectric Yuechan Kong, Jianjun Zhou, Cen Kong, Kai Zhang, and Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, China WeEO3 9:15 - 9:30 Quasi Normally-Off AlGaN/GaN MOSHEMTs with Ultra-Thin Al0.45Ga0.55N Barrier and PECVD-SiOx as Gate Insulator Ahmed Chakroun1, Abdelatif Jaouad1, Ali Soltani2, Osvaldo Arenas1, Vincent Aimez1, Richard Arès1 and Hassan Maher1 1Laboratoire Nanotechnologies Nanosystèmes (LN2)- CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada 2Institut d'Electronique, de Microélectronique et de Nanotechnologie, Centre National de Recherche Scientifique (IEMN/CNRS), 59650 VilleneUVe d'Ascq, France WeEO4 9:30 - 9:45 Normally Off AlGaN/GaN High Electron Mobility Transistors Using Multi-Mesa-Channels and Recessed Gate Structure Bin Hou1,2, Weiwei Chen1,2, Jiejie Zhu1,2, Shenglei Zhao2, Jincheng Zhang2, Xiaohua Ma1,2 and Yue Hao2 1School of Advanced Materials and Nanotechnology, Xidian University, China 2Key Lab of Wide Bandgap Semiconductor Materials and Devices, China WeEO5 9:45 - 10:00 Normally-Off Operation of AlGaN/GaN-On-Si Metal-Oxide-Semiconductor-Heterojunction Field-Effect Transistor Using Clamped Gate Voltage Sang-Woo Han1, Sung-Hoon Park1, Jae-Gil Lee1, Ho-Young Cha1 1School of Electronic and Electrical Engineering, Hongik University, Korea Coffee Break 10: 00 - 10:20 September 2 Parallel Session A: Growth Session A8: Quantum Dots Room: Convention Hall No. 2-I 10:20 –11:50 Chairs: Axel Hoffmann and Tatiana Shubina WeGI6 (invited) 10:20 - 10:50 Self-Assembled Nitride Quantum Dots for UV Light Emitting Diodes J. Brault1, B. Damilano1, A. Courville1, M. Al Khalfioui1,2, M. Leroux1, S. Chenot1, P. Vennéguès1, P. De Mierry1, J. Massies1, D. Rosales3, T. Bretagnon3 and B. Gil3 1CNRS-CRHEA, Rue Bernard Grégory, 06560 Valbonne, France 2Université de Nice Sophia-Antipolis, 06103 Nice, France 3CNRS-Université Montpellier 2, Laboratoire Charles Coulomb and Université Montpellier 2, UMR 5221, 34095 Montpellier, France WeGO7 10:50 - 11:05 Direct Evidence of Single Quantum Dot Emission from GaN Islands Formed at Threading Dislocations Using Nanoscale Cathodoluminescence Gordon Schmidt1, Sebastian Metzner1, Christoph Berger1, Peter Veit1, Gordon Callsen2, Stefan Kalinowski2, Jürgen BläSiNg1, Frank Bertram1, Armin Dadgar1, Axel Hoffmann2, André Strittmatter1, and Jürgen Christen1 1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany 2Institute of Solid State Physics, Technical University Berlin, Germany WeGO8 11:05 - 11:20 Non-Polar (11-20) InGaN Quantum Dots and Nano-Rings Grown by Modified Droplet Epitaxy H. P. Springbett1, J. T. Griffiths1, T. J. O’Hanlon1, T. Zhu1, R. A. Oliver1 1Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom WeGO9 11:20 - 11:35 Surface Energy Control and GaN Quantum Dot Growth by MOVPE Konrad Bellmann1, Torsten Ernst1, Tim Wernicke1, André Strittmatter1,2, and Michael Kneissl1 1Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstrasse 36, 10623 Berlin, Germany 2Otto-von-Guericke Universität Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, 39106 Magdeburg, Germany WeGO10 11:35 - 11:50 Measuring the Homogeneous Emission Linewidths of Site-Controlled GaN Nanowire Quantum Dots Mark Holmes1, Satoshi Kako2, Kihyun Choi1, Munetaka Arita1, and Yasuhiko Arakawa1,2 1Institutue for Nano Quantum Information Electronics, The University of Tokyo, Japan 2Institute of Industrial Science, The University of Tokyo, Japan Lunch 12:00 -13:30 September 2 Parallel Session B: Growth Session B8: Novel Growth Room: Meeting Room 201 10:20 –11:50 Chairs: Seongju Park and Kazuhide Kusakabe WeBI6 (invited) 10:20 - 10:50 Feasibility of Large Area III-Nitride Devices Prepared by Pulsed Sputtering Hiroshi Fujioka1,2, Kohei Ueno1, Atsushi Kobayashi1, and Jitsuo Ohta1 1Institute of Industrial Science, the University of Tokyo, Japan 2ACCEL, Japan Science and Technology Agency, Japan WeBO7 10:50 - 11:05 Direct Growth of GaN on Ge Substrate Interface Structure and Chemistry Siyuan Zhang1, Yucheng Zhang1, Ying Cui2, Christoph Freysoldt2, Jörg Neugebauer2, Ruben R. Lieten3, Jonathan S. Barnard1 and Colin J. Humphreys1 1Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom 2Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf, Germany 3IMEC, KU LeUVen, Kapeldreef 75, 3001 Heverlee, Belgium WeBO8 11:05 - 11:20 Fabrication and Characterization of Two Dimensional C-AlN Photonic Crystal Membranes Containing C-GaN Quantum Dots Sarah Blumenthal1, Matthias Bürger1, Andre Hildebrandt2, Jens Förstner2, Nils Weber1, Cedrik Meier1, Dirk Reuter1 and Donat J. As1 1University of Paderborn, Department of Physics, Germany 2University of Paderborn, Department of Theoretical Electrical Engineering, Germany WeBO9 11:20 - 11:35 High Efficiency Piezoelectric Generator Using GaN p-n Junction Jin-Ho Kang1, Mohamed Ebaid1, Dae Kyung Jeong1, Jun-Seok Ha2, and Sang-Wan Ryu1,2 1Department of Physics, Chonnam National University, Gwangju, 500-757, Korea 2Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 500-757, Korea WeBO10 11:35 - 11:50 Application of Magnetron Sputtering AlN Film in GaN Based LED Manufacturing Process Dong Boyu, Wu Jun, Guo Bingliang, Zhang Jun, Wu Xuewei, Xu Baogang, Zhang Henan, Wang Hougong, Ding Peijun North Microelectronics Corporation Lunch 12:00 -13:30 September 2 Parallel Session C: Optical Devices Session C8: UV Materials and Devices Room: Convention Hall No. 2-II 10:20 –11:50 Chairs: Hongxing Jiang and Yi Luo WeOI6 (invited) 10:20 - 10:50 Plasma-Assisted MBE of Al-Rich AlGaN QW Structures for Mid-UV Optoelectronics S. V. Ivanov1*, V. N. Jmerik1, S. RoUVimov1,2, V. I. Kozlovsky3, E. V. Lusenko4 1Ioffe Physical-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia 2University of Notre Dame, Notre Dame, Indiana 46556, US 3Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, Moscow 119991, Russia 4Stepanov Institute of Physics of NAS Belarus, Nezalezhnasti Ave. 68, Minsk 220072, Belarus WeOO7 10:50 - 11:05 Suppressions of p-GaN Absorption and TM-Polarized Emission through Surface Plasmon Coupling in an UV LED with Embedded Al Nanoparticles Yang Kuo1, Chia-Ying Su2, Chieh Hsieh2, Wen-Yen Chang2, Chu-An Huang2, Yean-Woei Kiang2, and C. C. Yang2,* 1Department of Energy and Refrigerating Air-conditioning Engineering, Tung Nan University, New Taipei City, Taiwan 2Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan WeOO8 11:05 - 11:20 Efficient Carrier Injection into AlGaN-Based UV-C LEDs Emitting Below 240 nm Frank Mehnke1, Johannes Enslin1, Christian Kuhn1, Simon Kapanke1, Martin Guttmann1, Christoph Reich1, Ute Zeimer2, Arne Knauer2, Sylvia Hagedorn2, Tim Wernicke1, Markus Weyers2, and Michael Kneissl1,2 1Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin Germany 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12480 Berlin, Germany WeOO9 11:20 - 11:35 Tunable Deep UV LEDs with GaN/AlN Quantum Structures Using Polarization-Induced Doping SM Islam1, Vladimir Protasenko1, Sergei RoUVimov2, Jai Verma1, Huili (Grace) Xing1,3 and Debdeep Jena1,3 1Department of Electrical Engineering, University of Notre Dame, IN, USA 2NDIIF, University of Notre Dame, IN, USA 3Depts of ECE and MSE, Cornell University, NY, USA WeOO10 11:35 - 11:50 E-Beam Pumped UV Source in AlGaN MQWs Grown by MBE X. Rong1, S. V. Ivanov1,2, V. N. Jmerik2, V. V. Ratnikov2, V. I. Kozlovsky3,4, V. P. Martovitsky3, G. Chen1, F. J. Xu1, B. Shen1 and X. Q. Wang1,* 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2Ioffe Physical-Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia 3Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, 119991 Moscow, Russia 4National Research Nuclear University MEPhI, Kashirskoye shosse 31, 115409 Moscow, Russia Lunch 12:00 -13:30 September 2 Parallel Session D: Electronic Devices Session D8: HEMTs Room: Convention Hall No. 2-III 10:20 –11:50 Chairs:Jinping Ao and Xuqiang Shen WeEI6 (invited) 10:20 - 10:50 Confinement and Transport Characteristics of High-Density Two-Dimensional-Electron-Gas in Novel GaN-Based Heterostructures Jincheng Zhang1,2 and Yue Hao1,2 1School of Microelectronics, Xidian University, China 2Key Lab of Wide Band-gap Semiconductor Technology, China WeEO7 10:50 - 11:05 Mitigation of Interface Trap Related Gate Lag by Polarization-Doped Epitaxial Passivation in a Dual-Channel AlN/GaN HEMT Architecture David A. Deen1,2, Brian P. Downey2, David F. Storm2, David J. Meyer2, Neeraj Nepal2, D. Scott Katzer2, Ross Miller1, and Andrei OSiNsky1 1Agnitron Technology, Eden Prairie, MN, U.S.A. 2Naval Research Laboratory, Electronic Science and Technology Division, Washington D.C., U.S.A WeEO8 11:05 - 11:20 Improvement of Electrical Characteristics of GaN MOS-Capacitor Using O3-Al2O3/H2O-Al2O3 Dielectric Layer Deposited by Atomic Layer Deposition Zhen Shen1, Guilin Zhou1, Yao Yao1, Fan Yang1, Yiqiang Ni1, Yue Zheng1, Deqiu Zhou1, Liang He1, Zhisheng Wu1,3, Baijun Zhang1,3*, and Yang Liu1,2* 1School of Physics and Engineering, 2Institute of Power Electronics and Control Technology, 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd.135, 510275 Guangzhou, People’s Republic of China WeEO9 11:20 - 11:35 Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs Hua Mengyuan1, Cheng Liu1, Shu Yang1, Shenghou Liu1, Kai Fu2, Zhihua Dong2, Yong Cai2, Baoshun Zhang2, and Kevin J. Chen1 1The Hong Kong University of Science and Technology, Hong Kong 2The Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, China WeEO10 11:35 - 11:50 Influence of SiN Passivation on Transport Properties in Ultrathin AlN/GaN HFETs Yuanjie Lv, Zhihong Feng, Shaobo Dun, Jiayun Yin, Xin Tan and Xubo Song National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, China Lunch 12:00 -13:30 September 2 Parallel Session A: Growth Session A9: InN & InGaN Room: Convention Hall No. 2-I 13:30 - 15:30 Chairs: Vanya Darakchieva and Yoshihiro Ishitani WeGI11 (invited) 13:30 - 14:00 Intra-Plane Ordering of (In,Ga)N Monolayers T. Schulz1, T. Markurt1, M. Albrecht1, C. Freysoldt2, L. Lymperakis2, J. Neugebauer2, X.T. Zheng3, D.Y. Ma3 and X.Q. Wang3,4 1Leibniz-Institute for Crystal Growth, Max Born Str. 2, 12489 Berlin, Germany 2Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40227 Düsseldorf, Germany 3State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China 4Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China WeGI12 (invited) 14:00 - 14:30 Challenges for InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys Kazuhide Kusakabe 1,2 and Akihiko Yoshikawa 1,3 1Center for SMART Green Innovation Research, Chiba University, Japan, 2JST-ALCA: SMART Solar Cell Project, Chiba University, Japan, and 3Kogakuin University, Japan WeGO13 14:30 - 14:45 In-Situ Ellipsometry Observation of Al Adatoms and Oxidation/Nitridation Processes for Deactivating Leak Paths in Nitride Solar Cells Ke Wang1, Daichi Imai1, Kazuhida Kusakabe1 and Akihiko Yoshikawa1,2 1SMART Green Innovation Center, Chiba University, Japan 2Dept. Info. & Comm. Eng., Kogakuin University, Japan WeGO14 14:45 - 15:00 Staggered High Indium Content InGaN Quantum Wells Grown by PAMBE H. Turski1, G. Muziol1, P. Wolny1, M. Siekacz1,2, S. Grzanka1,2, E. Grzanka1, M. Baranowski3, R. Kudrawiec3, C. Skierbiszewski1,2 1Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland 2Top-GaN Ltd., Warsaw, Poland 3Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland WeGO15 15:00 - 15:15 Microscopic Strain Analysis of Graded InGaN/GaN Quantum Well Grown Using Nitrogen Plasma Assisted Molecular Beam Epitaxy Pawan Mishra1, Bilal Janjua1, Dalaver H. Anjum2, Tien Khee Ng1, Chao Shen1, and Boon S. Ooi1* 1Photonics Laboratory, King Abdullah University of Science & Technology (KAUST), Thuwal 21534, Saudi Arabia 2Adavanced nanofabrication Imaging and characterization, KAUST, Thuwal 21534, Saudi Arabia WeGO16 15:15 - 15:30 Growth Kinetics of InGaN Films by Plasma-Assisted Molecular Beam Epitaxy on (0001) GaN E. Papadomanolaki1, S.A. Kazazis1, and E. Iliopoulos1,2 1Physics Department, University of Crete, Heraklion, Greece 2Micro/Nano-Electronics Research Group, IESL-FORTH, Heraklion, Greece Coffee Break 15: 30 - 15:45 Rump Session Roadmap of GaN power versus those of Si, SiC and others Room: Convention Hall No. 2-I 15:45 –18:00 Chairs: Kevin J. Chen and Huili(Grace) Xing September 2 Parallel Session B: Basic Physics Session B9: Tunneling Devices Room: Meeting Room 201 13:30 - 15:30 Chairs: Andreas Hangleiter and Junyong Kang WeBI11 (invited) 13:30 - 14:00 III-Nitride Tunnel Junctions for Visible and Ultraviolet Photonics Siddharth Rajan The Ohio State Univ, USA WeBI12 (invited) 14:00 - 14:30 Polarization-Engineered Tunneling in III-Nitride Heterostructures: Physics and Device Applications Debdeep Jena1,2, Xiaodong Yan2, Wenjun Li2, Kasra Pourang2, Jimy EncomenderoRisco2, Moudud Islam2, Vladimir Protasenko2, Stacia Keller3, Patrick Fay2, and Huili Grace Xing1,2 1ECE and MSE Departments, Cornell University, USA 2EE Department, University of Notre Dame, USA 3ECE Department, University of California Santa Barbara, USA WeBO13 14:30 - 14:45 Numerical Investigation on a Novel +c-Plane InGaN Based Solar Cell with a Polarization Induced Tunnel Junction Akihiro Nakamura1, Katsushi Fujii2, Masakazu Sugiyama1, Yoshiaki Nakano1 1Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2Global Solar+ Initiative, The University of Tokyo, WeBO14 14:45 - 15:00 Carriers Tunneling Effect in Coupled InGaN/GaN Quantum Well and Quantum Dots Jiadong Yu, Lai Wang, Di Yang, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang and Hongtao Li Tsinghua National Laboratory on Information Science and Technology / Department of Electronic Engineering, Tsinghua University, Beijing 100084, China WeBO15 15:00 - 15:15 Polarization Engineered Al0.55Ga0.45N Tunnel Junctions for Ultraviolet Emitters Yuewei Zhang1,a), Sriram Krishnamoorthy1, Fatih Akyol1, Sadia Khandaker Monika2, Andrew Allerman3, Michael W. Moseley3, Andrew Armstrong3, and Siddharth Rajan1,b) 1Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, 43210, USA 2The Ohio State University, Columbus, Ohio, 43210, USA 3Sandia National Laboratories, Albuquerque, New Mexico 87185, USA WeBO16 15: 15 - 15:30 Multiple Surface Reconstructions on Capped In0.11Ga0.89N/GaN Single Quantum Wells Sabine Alamé1,2*, Andrea Navarro Quezada1, Daria Skuridina2, Christoph Reich2, Dimitri Henning2, Martin Frentrupp2, Tim Wernicke2, Ingrid Koslow2, Michael Kneissl2, Norbert Esser1,2, Patrick Vogt2 1Leibniz-Institut für Analytische Wissenschaften – ISAS – e. V., Schwarzschildstraße 8, 12489 Berlin, Germany 2Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstraße 36, 10623 Berlin, Germany Coffee Break 15: 30 - 15:45 September 2 Parallel Session C: Optical Devices Session C9: Lasers Room: Convention Hall No. 2-II 13:30 - 15:30 Chairs: Russell Dupuis and Czeslaw Skierbiszewski WeOI11 (invited) 13:30 - 14:00 Growth and Characterization of III-N Ultraviolet Lasers and Avalanche Photodiodes on Free-Standing GaN Substrates by MOCVD Jeomoh Kim1, Mi-Hee Ji1, Yuh-Shiuan Liu1, Theeradetch Detchprohm1, Russell D. Dupuis1, Tsung-Ting Kao1, Saniul Haq1, Shyh-Chiang Shen1, Karan Mehta1, P. Douglas Yoder1, Hongen Xie2, Fernando Ponce2, Ashok Sood3, and Nabir Dhar4 1Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA 2Arizona State University, Tempe AZ; 3Magnolia Optical Technologies, Woburn MA; 4Night Vision Sensors and Electronic Division, Ft. Belvoir VA WeOI12 (invited) 14:00 - 14:30 Milliwatt-Class GaN-Based Blue Vertical-Cavity Surface-Emitting Lasers Fabricated by Epitaxial Lateral Overgrowth Tatsushi Hamaguchi, Noriyuki Fuutagawa, Shouichiro Izumi, Masahiro Murayama, Masaru Kuramoto, and Hironobu Narui. Sony Corporation, Japan WeOO13 14:30 - 14:45 Room-Temperature GaN Polariton Laser Integrated on a Silicon Substrate J. Y. Duboz1,*, S. Bouchoule2, C. Brimont3, P. Disseix4, T. Guillet3, M. Leroux1, J. Leymarie4, F. Réveret4, F. Semond1, and J. Zuniga-Perez1 1CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France 2LPN-CNRS, Route de Nozay, 91460 Marcoussis, France 3Université de Montpellier 2, CNRS, Laboratoire Charles Coulomb, UMR 5221, 34095 Montpellier, France 4Institut Pascal, PHOTON-N2, Clermont Université, CNRS and Université Blaise Pascal, 24 Avenue des Landais, 63177 Aubière cedex, France WeOO14 14:45 - 15:00 InGaN-Based Blue-Violet Laser Diodes Grown on Si (111) by MOCVD Yi Sun1,2,3, Kun Zhou1,2, Yu Zhou1,2, Qian Sun*1,2, Jianping Liu*1,2, Liqun Zhang1,2, Deyao Li1,2, Shuming Zhang1,2, Masao Ikeda1,2, Sheng Liu3,4, and Hui Yang1,2 1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences (CAS), Suzhou 215123, China 2Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China 3School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China 4School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China WeOO15 15:00 - 15:15 Long Living Blue Laser Diodes Grown by Plasma Assisted Molecular Beam Epitaxy G. Muziol1, M. Siekacz1,2, H. Turski1, S. Grzanka1,2, E. Grzanka1,2, P. Perlin1,2, C. Skierbiszewski1,2 1Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland 2TopGaN Ltd, ul Sokolowska 29/37, 01-142 Warsaw, Poland WeOO16 15:15 - 15:30 Light Extraction from Photonic Crystals Structures in GaN-Based Green Light-Emitting Diodes Fabricated by Anodic Aluminum Oxide Stamp and Nanoimprint Lithography Shengxiang Jiang, Zhizhong Chen, Yulong Feng, Xingxing Fu, Xianzhe Jiang, Shuang Jiang, Qianqian Jiao , Tongjun Yu, Guoyi Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China Coffee Break 15: 30 - 15:45 Rump Session Next Generation Light Emitting Devices Room: Convention Hall No. 2-II 15:45 –18:00 Chairs: Andreas Waag September 2 Parallel Session D: Electronic Devices Session D9: HEMTs Room: Convention Hall No. 2-III 13:30 - 15:30 Chairs: Takashi Egawa and Martin Kuball WeEI11 (invited) 13:30 - 14:00 Status and Opportunities of Ultrathin Barrier GaN Power Devices Farid Medjdoub Institute of Electronic, Microelectronic and Nanotechnology, IEMN - CNRS VilleneUVe d’ascq, France WeEI12 (invited) 14:00 - 14:30 Characterization of Surfaces and Interfaces of InAlN/GaN Heterostructures Masamichi Akazawa and Tamotsu Hashizume Research Center for Integrated Quantum Electronics, Hokkaido University, Japan WeEO13 14:30 - 14:45 All GaN Integrated Cascode Heterojunction Field Effect Transistors S. Jiang1, K. B. Lee1, I. Guiney2, P. F. Miaja3, Z. H. Zaidi1, H. Qian1, D. J. Wallis2, A. J. Forsyth3, C. J. Humphreys2 and P. A. Houston1 1Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield, United Kingdom 2Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB30FS Cambridge, United Kingdom 3School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, Manchester, United Kingdom WeEO14 14:45 - 15:00 700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate Jeho Na1, Hyung-Seok Lee1, Chi-Hoon Jun1, Dong Yun Jung1, Hyun Soo Lee1,2, Woojin Chang1, Sang Choon Ko1 and Eun Soo Nam1 1Electronics and Telecommunications Research Institute, Republic of Korea 2Department of Electronics and Electrical Engineering, Dankook University, Republic of Korea WeEO15 15:00 - 15:15 A Comprehensive Study of High Ga Percentage Quaternary InAlGaN HEMT Xiang Gao, Ming Pan, Mark Oliver, Daniel Gorka, Sherry Ye, and Ivan Eliashevich IQE Wireless, Somerset, New Jersey, USA WeEO16 15:15 - 15:30 Cavity-Enhanced Optical Hall Effect in AlInN/GaN-Based HEMT Structures Detected at Terahertz Frequencies S. Knight1, S. Schöche2, V. Darakchieva3, P. Kühne3, J.-F. Carlin4, N. Grandjean4, C.M. Herzinger2, M. Schubert1, and T. Hofmann1,3 1Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511, USA 2J.A. Woollam Co., Inc., 645 M Street, Suite 102, Lincoln, Nebraska 68508-2243, USA 3Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping, Sweden 4Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland Coffee Break 15: 30 - 15:45 Rump Session UV Light Emitting Devices Room: Convention Hall No. 2-III 15:45 –18:00 Chairs: Motoaki Iwaya and Wenhong Sun September 2 Poster Room: Meeting Room 203 18:00 – 20:00 WeEP1 Carbon-Related Deep-Level Defects and Carrier Trapping Characteristics in AlGaN/GaN Hetero-Structures Yoshitaka Nakano1, Yoshihiro Irokawa2, Masatomo Sumiya2, Shuichi Yagi3, and Hiroji Kawai3 1Chubu University, Japan 2National Institute for Materials Science, Japan 3POWDEC, Japan WeEP2 A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma Yoshitaka Nakano1, Retsuo Kawakami2, Masahito Niibe3, Tatsuo Shirahama2, and Takashi Mukae4 1Chubu University, Japan 2University of Tokushima, Japan 3University of Hyogo, Japan 4Nichia Corporation, Japan WeEP3 Identification of Electrically Active Dislocations in AlGaN/GaN-Heterostructures by C-AFM S. Besendörfer1, E. Meissner1,2, M. Knetzger2, J. Friedrich2, L. Frey1,2 1Chair of Electron Devices, University Erlangen-Nuremberg, Germany 2Fraunhofer-Institute for Integrated Systems and Device Technology IISB, Germany WeEP4 Synchrotron Radiation X-Ray Photoelectron Spectroscopy Study of Interface Reactions in Al/Ti/GaN Ohmic Contacts Mikito Nozaki1, Joyo Ito1, Ryohei Asahara1, Satoshi Nakazawa2, Masahiro Ishida2, Tetsuzo Ueda2, Akitaka Yoshigoe3, Yuden Teraoka3, Takuji Hosoi1, Takayoshi Shimura1, and Heiji Watanabe1 1Graduate School of Engineering, Osaka University, Japan 2Panasonic Corporation, Japan 3Japan Atomic Energy Agency, Japan WeEP5 Study of Threshold Voltage Instability in E-Mode GaN MOS-HEMTs Ferdinando Iucolano1, Antonino Parisi1, Santo Reina1, G. Meneghesso2,4, Alessandro Chini3,4 1STMicroelectronics, Italy 2University of Padova, DDepartment of IInformation Engineering, Italy 3University of Modena and Reggio Emilia, Department of Engineering “Enzo Ferrari”, Italy 4Consorzio Interuniversitario per la Nanoelettronica – IUNET, Italy WeEP6 Electrical Properties of Room Temperature Bonded Si/GaN Heterojunctions without Buffer Layers Jianbo Liang1, Takuya Nishimura1, Noriyuki Watanabe2, and Naoteru Shigekawa1 1Department of Electrical Engineering, Osaka City University, Japan 2NTT Device Technology Laboratories, NTT Corporation, Japan WeEP7 High Breakdown Voltage and Low Reverse Leakage AlGaN/GaN Schottky Barrier Diodes with a Novel Anode Field Plate Trench Hongwei.Chen1 , Xi Song1, Shufeng Zhao1, Guangmin Deng2, Lei Feng 1, Kai Cheng3, Naiqian.Zhang1, Yi Pei2,a 1Dynax Semiconductor Inc. SuZhou, China 2Gpower Semiconductor Inc. SuZhou, China 3Enkris Semiconductor Inc. SuZhou, China WeEP8 Nature of Polarization Induced Carriers in/on III-Nitride Heterojunction Structures Shuxun Lin1, Cheng P. Wen1, Maojun Wang1, Kei May Lau2, Y. L. Hao1 1The Institute of Microelectronics, Peking University, Beijing, China 2Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong WeEP9 High Accuracy Equivalent Circuit Model for GaN Gate Injection Transistor Bi-Directional Switch Toshihide Ide1, Mitsuaki Shimizu1, Xu-Qiang Shen1, Tatsuo Morita2, Nobuyuki Otsuka2, and Tetsuzo Ueda2 1Advanced Industrial Science and Technology (AIST), Japan 2Panasonic Corporation, Japan WeEP10 Device Isolation for GaN MOSFET Using Boron Ion Implantation Fuzhe Zhang1, Ying Jiang1, Qingpeng Wang1, Satoko Shinkai2, and Jin-Ping Ao1 1Institute of Technology and Science, Tokushima University, Japan 2Center for Microelectronic System, Kyushu Institute of Technology, Japan WeEP11 Investigation of Undiminished Surface Donor Density of GaN/AlGaN/GaN Heterostructure on Si-Substrate by Electroreflectance Spectroscopy Woong Sun Kim1, Kwang-Choong Kim1, and Kyu Sang Kim2 1IGBT part, LG Electronics, Korea 2Dept. of Applied Physics & Electronics, Sangji University, Korea WeEP12 High Quality AlGaN/GaN HEMT Structure Grown on 4H-SiC Using Metal Organic Chemical Vapor Deposition Kyungjae Lee, Cheon Heo, Kwangse Ko, Byungchan So, Kyungbae Lee, and Okhyun Nam* 1Convergence Center for Advanced Nano Semiconductors (CANS), 2Department of Nano-Optical Engineering, Korea Polytechnic University, 237, Sangidaehak-ro, Siheung-si, Gyeonggi-do 429-793, South Korea WeEP13 Effects of HfO2 Dielectric Layer in AlInN/GaN Heterostructures Z. Gao1*, M. F. Romero1, P. Godignon2, J. Millán2, and F. Calle1 1Dep. Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnología ETSI Telecomunicación, Universidad Politécnica de Madrid, Av. Complutense 30, 28040 Madrid, Spain 2CNM-IMB CSIC, Campus UAB, 08193 Bellaterra, Spain WeEP14 GaN Piezoelectric Nanogenerator by a NiO-GaN p-n Junction Formation Dae Kyung Jeong1, Jin-Ho Kang1, Mohamed Ebaid1, Jun-Seok Ha2, and Sang-Wan Ryu1,2 1Department of Physics, Chonnam National University, Gwangju, 500-757, Korea 2 Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 500-757, Korea WeEP15 III-Nitride Nanorods Photovoltaic on Silicon Grown by PA-MBE Ching-Wen Chang1, Paritosh Wadekar1, Hui-Chun Huang2, Niou-Jin Ho2, Yuan-Fu Hsu1, Chen-Yu Lin1, Sheng-Hsiang Wang1, and Li-Wei Tu1,3 1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C. 2Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, Kaohsiung 880424, Taiwan, R.O.C. 3Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University, Kaohsiung 80708, Taiwan, R.O.C WeEP16 Resistance Memory Based on All III-Nitride Semiconductors Yiren Chen, Xiaojuan Sun, Hang Song*, Dabing Li*, Zhiming Li, Hong Jiang, Zhiwei Zhang, and Guoqing Miao State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China WeEP17 Dark Current Mechanisms in AlGaN Avalanche Photodiodes Z. G. Shao, H. F. You, D. J. Chen, H. Lu, R. Zhang, and Y. D. Zheng the Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, China WeEP18 The Correlation of Photoluminescence and Voltage-Blocking Properties of C-Doped GaN on Si Substrate Deqiu Zhou1, Yiqiang Ni1, Zhiyuan He1, Fan Yang1, Yao Yao1, Guilin Zhou1, Zhen Shen1, Jian Zhong1, Yue Zheng1, Liang He1, Zhisheng Wu1,3, Baijun Zhang1,3, Yang Liu1,2,* 1School of Physics and Engineering, 2Institute of Power Electronics and Control Technology, 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, 510275 Guangzhou, People’s Republic of China WeEP19 The Modulation of the Domain Mode in GaN-Based Planar Gunn Diode for Terahertz Applications Ying Wang, Lin-An Yang, Yang Li and Yue Hao State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, China WeEP20 Water Splitting Performance of Polar GaN in Comparison with Semi-Polar GaN Hyojung Bae1, Eunsook Kim1, Jun-Beom Park1, Hyung-Jo Park1, Hyo-Jong Lee2, Katsushi Fujii3, and Jun-Seok Ha1,* 1Chonnam National University, Gwangju 500-757, Korea 2Dong-A University, Busan, 604-714, Korea 3The University of Tokyo, komaba kampus, Tokyo, 113-8656, Japan WeEP21 Origin and Control of off-State Leakage Current in GaN-on-Si Vertical Diodes Yuhao Zhang1, Min Sun1, Hiu-Yung Wong2, Christopher Hatem3, Daniel Piedra1, Takamichi Sumitomo1, Nelson de Almeida Braga2, Vidas Mickevicius2, Tomás Palacios3 1Department of EECS, MIT, U.S.A 2Synopsys, U.S.A 3Applied Materials - Varian, U.S.A WeEP22 Improved Performance of AlGaN/GaN HEMTs by O2-Plasma and HCl Surface Treatment Xing Lu1,2, Huaxing Jiang1, Chao Liu1 and Kei May Lau1 1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 2State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, 710049, China WeEP23 The Improvement of Threshold Voltage Stability on Normally-Off AlGaN/GaN Metal Oxide semiconductor Field Effect Transistors by Selective Area Growth Yue Zheng1, Yao Yao1, Fan Yang1, Liang He1, Zhen Shen1, Yiqiang Ni1, Deqiu Zhou1, Guilin Zhou1, Jian Zhong1, Zijun Chen1, Zhisheng Wu1,3, Baijun Zhang1,3*, Yang Liu1,2,* 1School of Physics and Engineering, 2Institute of Power Electronics and Control Technology, 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, 510275 Guangzhou, People’s Republic of China WeEP24 GaN-on-Diamond for Ultra-High Power Electronics Huarui Sun1, James W. Pomeroy1, Roland B. Simon1, Daniel Francis2, Firooz Faili2, Daniel J. Twitchen2, and Martin Kuball1 1Center for Device Thermography and Reliability (CDTR), University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom 2Element Six Technologies, 3901 Burton Drive, Santa Clara, CA 95054, USA WeEP25 GaN1-XAsx/GaN PN Junction Diodes H. Qian1, K. B. Lee1, S. Hosseini Vajargah2, S.V. Novikov3, I. Guiney2, Z. H. Zaidi1, S. Jiang1, D. J. Wallis2, C. T. Foxon3, C. J. Humphreys2 and P. A. Houston1 1Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK 2Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK 3School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK WeEP26 Reference Elecrode Free AlGaN/GaN-Based Sensor Response towards Acidic and Basic Solutions F. L. M. Khir1, M. Myers2,3, M. V. Baker2, B. D. Nener1, and G. Parish1 1School of Electronics, Electrical, and Computer Engineering, University of Western Australia, WA 66009, Australia 2School of Chemistry and Biochemistry, University of Western Australia, WA 6009, Australia 3CSIRO Earth Science and Resource Engineering, WA 6151, Australia WeEP27 Self-Consistent Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (InxAl1-xN/AlN) MQWs/InN/GaN Heterostructure Wei Li1, Quan Wang2,1, Cuimei Wang1, Haibo Yin1, Junda Yan1, Jiamin Gong2, Bo Zhang2, Baiquan Li4, Xiaoliang Wang1,3,*, Zhanguo Wang1 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, China 2School of Electronic Engineering, Xi`an University of Posts & Telecommunications, China 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China 4Beijing Huajin Chuangwei Technology Co., Ltd., China WeEP28 Characteristic of Reduced Graphene Oxide/GaN Schottky Diodes Applied for Ultra-Violet Photo Detector Min Han, Beo Deul Ryu, Kang Bok Ko, Young Jae Park, Ko Ku Kang, Yong Su Lim, and Chang-Hee Hong* School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, 664-14, Dukjin-Dong, Dukjin-Ku, Jeonju, 561-756, South Korea WeEP29 Temperature-Dependent Hysteresis of the Two Dimensional Electron Gas Density in Lattice-Match InAlN/GaN Heterostuctures Ling Sang1, Xuelin Yang1, Jianpeng Cheng1, Lifang Jia2, Zhi He2, Lei Guo1, Anqi Hu1, Fujun Xu1, Ning Tang1, Xinqiang Wang1, Weikun Ge3, and Bo Shen1 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China 3Department of physics, Tsinghua University, Beijing 100084, China WeEP30 Demonstration of InAlN/AlGaN High Electron Mobility Transistors with Enhanced Breakdown Voltage and Linearity by Pulsed Metal Organic Chemical Vapor Deposition Junshuai Xue, Jincheng Zhang, and Yue Hao Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectroncis, Xidian University, China WeEP31 Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform Xi Tang, Qimeng Jiang, Hanxing Wang, Baikui Li, and Kevin J. Chen Dept. of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong WeEP32 In-Situ Studies of AlGaN/GaN 2DEG Conductivity as a Function of Zwitterionic Molecule Surface Coverage F. L. M. Khir1, M. Myers2,3, A. Tadich4, G. A Umana-Membreno1, M. V. Baker2, B. D. Nener1, and G. P Parish1 1School of Electronics, Electrical, and Computer Engineering, University of Western Australia, WA 66009, Australia 2School of Chemistry and Biochemistry, University of Western Australia, WA 6009, Australia 3CSIRO Earth Science and Resource Engineering, WA 6151, Australia 4Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168, Australia WeEP33 Suppress of Inverse Piezoelectric Effect in AlGaN/GaN Heterostructure Field-Effect Transistors by Depositing a Thermalmismatched Dielectric Yanli Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng School of Electronic Science and Engineering, Nanjing University, China WeEP34 Reduction of Surface Carbon Contamination on AlGaN/GaN via Cleaning Under Ultra High Vacuum F. L. M. Khir1, M. Myers2,3, A. Tadich4, B. D. Nener1, M. V. Baker2, and G. Parish1 1School of Electronics, Electrical, and Computer Engineering, University of Western Australia, WA 66009, Australia 2School of Chemistry and Biochemistry, University of Western Australia, WA 6009, Australia 3CSIRO Earth Science and Resource Engineering, WA 6151, Australia 4Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168, Australia WeEP35 Temperature Dependent Current-Voltage and 1/F Noise Characterstics of Graphene/GaN Schottky Barrier Diodes Ashutosh Kumar1, Ranjit Kashid2, Arindam Ghosh2, V. Kumar1 and R. SiNgh1 1Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India 2Department of Physics, Indian Institute of Science, Bangalore-560012, India WeEP36 Crack-Free AlGaN/GaN Heterostructures on a 200 mm Diameter Si (111) Substrate Grown by the Metal-Organic Chemical Vapor Deposition Technique 1 1 1 1 1 Hsueh- HSing Liu , Jun-Wei Chen , Han-Chieh Ho , Chia-Lung Tsai , Yi-Keng Fu , 1Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, HSiNchu 31040, Taiwan, R.O.C. WeEP37 Study of Interface Traps and Fixed Charges Between GaN(cap)/AlGaN/AlN/GaN Hetrostructure and SiNx Gate Dielectric Grown by Low Pressure Chemical Vapor Deposition Zhaoyang Liu1, Sen Huang2, Qilong Bao2, Xinhua Wang2, Ke Wei2, Xinyu Liu2, Qi Zhou1, Wanjun Chen1, Bo Zhang1 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu610054, China 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China WeEP38 Extraction of Effective Mobility Extraction in AlGaN/GaN FinFETs Hee-Sung Kang1, Sung Jae Chang2, Young-Woo Jo1, Dong-Hyeok Son1, Jae-Hong Lee1, Do-Kywn Kim1, Jun-Hyeok Lee1, Won-Sang Park1, Chan Heo1 and Jung-Hee Lee1 1School of Electronics Engineering, Kyungpook National University, South Korea 2Electrical Engineering, Yale University, USA WeEP39 Swcnts and Mwcnts for Radiation Resistant III-Nitride Solar Cell for Space Application Anurag G. Reddy1,2, Shibin Krishna T.C.1,2, Neha Aggarwala*, Govind Gupta1,2,* 1Physics of Energy Harvesting, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Road New Delhi-110012, India 2Academy of Scientific & Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Road, New Delhi 110012, India WeEP40 InxAl1-xN/AlN/GaN High Electron Mobility Transistors on Si (111) Substrates with Gold-Free Processing T. N. Bhat1, L. M. Kyaw2, L. K. Bera1, S. B. Dolmanan1, E. F. Chor2, and S. Tripathy1 1Institute of Materials Research and Engineering, A*STAR, Singapore 2Department of Electrical and Computer Engineering, NUS, Singapore WeEP41 A Study of the Ambipolar Carrier Lifetime for Homojunction p-i-n Rectifiers T.-T. Kao, A F M Saniul Haq, J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, and S.-C. Shen School of Electrical and Computer Engineering, Georgia Institute of Technology, USA WeEP42 Negative Differential Photovoltage in a Biased InGaN LED Structure Donatas Meškauskas*, Ignas Reklaitis, Tadas Malinauskas, and Artūras Žukauskas Institute of Applied Research, Vilnius University, Saulėtekio Ave. 9-III, LT-10222 Vilnius, Lithuania WeEP43 Electrical Characterization of Individual Gallium Nitride Nanopillars Synthesized by Plasma Assisted Molecular Beam Epitaxy G. Doundoulakis1,2, A. Stavrinidis2, S. Eftychis1, J. Kruse1,2,M. Androulidaki2, K. Tsagaraki2, M.Kayambaki2, G. Konstantinidis2, P. Normand3, K. Zekentes2 and A. Georgakilas1,2 1Microelectronics Research Group, Department of Physics, University of Crete, P.O. Box 2208, 70013 Heraklion-Crete, Greece 2Institute of Electronic Structure and Laser (IESL), FORTH, P.O. Box 1385, 771110, Heraklion-Crete, Greece 3Department of Microelectronics, NCSR Demokritos, 15310 Aghia Paraskevi, Greece WeEP44 Effects of Strain and Etching Damages in Micron Light Emitting Diodes on the Distinguish Performance under High Injection Level Qianqian Jiao, Zhizhong Chen1*, Jian Ma1, Shuang Jiang1, Junze Li1, Shengxiang Jiang1, Yulong Feng1, Yifan Chen1, Tongjun Yu1, Shufeng Wang1, Guoyi Zhang1,2 1State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2SiNo Nitride Semiconductor Co., Ltd, Dongguan 523500, Guangdong, China WeEP45 Reducing the Leakage Current and Trap States in Al0.83In0.17N/GaN Schottky Diode by Fluorine Treatment Yong Xiang, Fujun Xu, Xuelin Yang and Tongjun Yu* State Key Laboratory of Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China WeEP46 Removal of Hydrogen in Mg-Doped GaN Epitaxial Layer by an Electrochemical Method Yuanpei Zhang, Gil Yong Hyeon, June Key Lee* Department of Materials Science & Engineering, Chonnam National University, Korea WeEP47 Low Temperature Ta/Al Based Ohmic Contacts to Nitride Semiconductors with Refractory Sidewall Diffusion Barrier Evgeny Erofeev1, Valery Kagadei1, Artyom Kazimirov2, Ivan Fedin2 1Research and Production Company Micran, Tomsk, Russia 2Tomsk state university of control systems and radioelectronics, Tomsk, Russia WeEP49 Analysis of Breakdown Characteristics in Source Field-Plate AlGaN/GaN HEMTs Hiraku Onodera, Hideyuki Hanawa, and Kazushige Horio Faculty of Systems Engineering, Shibaura Institute of Technology, Japan WeEP50 Analysis of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Deep Acceptors in a Buffer Layer N. Noda, R. Tsurumaki, and K. Horio Faculty of Systems Engineering, Shibaura Institute of Technology, Japan WeEP51 High-Performance E-Mode AlGaN/GaN MOS-HEMTs with Fluorinated Stack Gate Dielectrics Kai Zhang1, Yuechan Kong1, Jianjun Zhou1, Cen Kong1, Tangsheng Chen1, and Yue Hao2 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, P. R. China 2Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China WeEP52 First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line Li Yuan1, Xia Xiao1, Longjuan Tang1, Huahua Li1, Yuanqi Jiang1, Kevin J. Chen2 and Allen Yen1 1Skysilicon Co. LTD, Chongqing, China 2Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, China WeEP53 Wide-Band-Gap Materials for Deep UV Light Emitting Metal-Insulator-Semiconductor (MIS) Device Chen-Sheng Lin1, M. Kappers2, I. Guiney2, M. Moram1 1Department of Materials, Imperial College London, United Kingdom 2Cambridge Centre for Gallium Nitride, University of Cambridge, United Kingdom WeEP54 Effect of Al2O3 Layer Thickness on the Threshold Voltage of GaN-Based MIS-HEMTs Gourab Dutta, Nandita DasGupta and Amitava DasGupta Microelectronics and MEMS Laboratory, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, India WeEP55 Surface-Oxide-Controlled InAlN/GaN MOS-HEMTs with Water Vapor Shiro Ozaki1,2,*, Kozo Makiyama1,2, Toshihiro Ohki1,2, Yoichi Kamada2, Masaru Sato1,2, Yoshitaka Niida1,2, Naoya Okamoto1,2 and Kazukiyo Joshin1,2 1Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan 2Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan WeEP56 A Physics Based Drain Current Compact Model for GaN Based HEMTs Naveen Karumuri, Gourab Dutta, Nandita DasGupta and Amitava DasGupta. Microelectronics and MEMS lab, Department of Electrical Engineering, Indian Institute of Technology Madras, India. WeEP57 AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer Xiangdong Li, Jincheng Zhang, Yu Zou, Zhenxing Guo, Weihang Zhang, Renyuan Jiang, Haiqing Jiang, Huijuan Wen, Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, China WeEP58 Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs Woojin Chang1, Jeong-Jin Kim2, Seong-Bum Bae1, Youngrak Park1, Jae-Kyoung Mun1, and SangChoon Ko1 1Electronics and Telecommunications Research Institute, KOREA 2Jeonbuk National University, KOREA WeEP59 Buffer Leakage Related Breakdown Mechanisms of AlGaN/GaN High Electron Mobility Transistors Studied by Drain-Current Injection Method Weizong Xu1, Hai Lu1*, Fangfang Ren1, Dunjun Chen1, Rong Zhang1, Youdou Zheng1, Ke Wei2, Xinyu Liu2 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China WeEP60 Nearly Lattice-Matched Quaternary AlInGaN/GaN HEMTs Grown on Si (111) Yu Zhou1,2, Shujun Dai1,2, Hongwei Gao1,2, Shuiming Li1,2, Xiaoxue Chen1,2, Qian Sun*1,2, Hui Yang1,2 1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences (CAS), Suzhou 215123, China 2Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China WeEP61 High Quality AlGaN/GaN HEMT Structures Grown on 200mm Si Peng Xiang, Kai Liu, Hongjing Huo, Lei Feng, Hui Zhang, Hong Zhu, and Kai Cheng Enkris Yao Chen, Ning Zhou and Shiping Guo 1Semiconductor, Suzhou, China 2Advanced Micro-Fabrication Equipment Inc., Shanghai, China WeEP62 Novel Device Structure of Large Periphery AlGaN/GaN MIS-HEMT for Current Density Improvement Youngrak Park, Jungjin Kim, Woojin Chang, Hyung-Seok Lee, Junbo Park, Jaekyung Mun and Sangchoon Ko GaN Power Electronics Research Section, Electronics and Telecommunication Research Institute (ETRI), Daejeon, Republic of Korea WeEP63 Nitride-HEMT Biosensor Detection of Ca19-9 Antigen in Different Background Solutions P. H. Chen1, S. H. Wang1, W. Q. Song1, C. W. Chang1, K. H. Cheng2, S. Hsieh3, H. Y. J. Wang4, Y. Sun5, and Li-Wei Tu1,6 1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC 2Institute of Biomedical Sciences, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC 3Department of Chemistry, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC 4Department of Biological Sciences, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC 5University of Rhode Island, Dept. of Electrical, Computer & Biomedical, Kingston, RI 02881, USA 6Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University,Kaohsiung 80708, Taiwan, R.O.C WeEP64 Analysis of Device Characteristics of Thin AlN/GaN/AlN HEMTs Grown on Sapphire Substrates Ch. Zervos1,2, A. Adikimenakis2, A. Bairamis1,2, A. Kostopoulos2, M. Kayambaki2, K. Tsagaraki2, G. Konstantinidis2 and A. Georgakilas1,2 1Department of Physics, University of Crete, Greece 2Microelectronics Research Group, IESL, FORTH, Greece WeEP65 Deep Recessed GaN HEMTs with High Transconductance Jianjun Zhou, Cen Kong, Yuechan Kong, Daqing Peng, Haiyan Lu, Zhonghui Li and Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, China WeEP66 Differences between SiNx and AlN Passivations for AlGaN/GaN HEMTs: ATcad-Simulation Based Study Song Yang1, Zhikai Tang2, Yunyou Lu2, Anping Zhang1, and Kevin J. Chen1,2 1Joint School of Sustainable Development, HKUST-XJTU 2Department of Electronic and Computer Engineering Hong Kong University of Science and Technology, Hong Kong, China WeEP67 High-Performance Gate-Recessed Normally-Off GaN MIS-HEMTs with Thin Barrier Layer Shenghou Liu, Shu Yang, Cheng Liu, Yunyou Lu and Kevin J. Chen The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong WeEP68 Effect of AlN Spacer in the Layer Structure on High Rf Performance GaN-Based HEMTs on Low Resistivity Silicon at K-Band Application. Abdalla Eblabla1, Xu Li1, Iain Thayne1, David J Wallis2, Ivor Guiney2 and Khaled Elgaid1 1Electronic and Nanoscale Engineering, School of Engineering, The University of Glasgow, UK 2Cambridge Centre for GaN, The University of Cambridge, UK WeEP69 Influence of Post-Metallization Annealing on Threshold Voltage Characteristics of Normally-Off Recessed AlGaN/GaN-on-Si HEMTs with SiNx Gate Dielectric Min-Seong Lee1, Dong-Hwan Kim1, Il-Hwan Hwang1, Ho-Young Cha2 and Kwang-Seok Seo1 1Department of Electrical Engineering and Computer Science, Seoul National University, Korea 2School of Electronic and Electrical Engineering, Hongik University, Korea WeEP70 Effects of High-Temperature Thermal Treatment on AlGaN/GaN HEMT Epi for Monolithic Integration Lexi J. Ren, Chao Liu, Kei May Lau, and Johnny K.O. Sin Department of Electronic & Computer Engineering The Hong Kong University of Science and Technology, Hong Kong WeEP71 Impact of Interface States on Switching Behavior of Normally-Off AlGaN/GaN MIS-HEMTs Yuanyuan Shi, Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen and Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China, China WeEP72 High-Quality PECVD SiO2 for Normally-Off AlGaN/GaN-On-Si Recessed MOS-HFET Hyun-Seop Kim1, Jae-Gil Lee1, Sung-Hoon Park1, Sang-Woo Han1, Kwang-Seok Seo2 and Ho-Young Cha*1 1Hongik University, Electronic and Electrical Engineering, 94 Wausan-ro, Mapo-gu, Seoul 2Seoul National University, Department of Electrical and Computer Engineering, 1 Gwanak-ro, Gwanak-gu, Seoul WeEP73 Normally-Off GaN HEMT Device with Nano-Pattern Structure Wei-Hung Kuo1, Suh-Fang Lin1, Yi-Keng Fu1, Han-Chieh Ho1, Chia-Lung Tsai1 1Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, HSiNchu 31040, Taiwan WeEP74 The Study of Ion Implanted Source/Drain GaN-Based HEMTs by Using Stacking AlN Protection Layers An-Jye Tzou1,2,*, Chun-Jung Su3, Zhen-Yu Li2,4, Chun-Yen Chang1,5, and Hao-Chung Kuo2 1Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, HSiNchu 30010, Taiwan 2Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, HSiNchu 30010, 1001 Ta Hsueh Road, HSiNchu 30010, Taiwan 3National Nano Device Laboratories, No.26, Prosperity Road 1, HSiNchu 30078, Taiwan 4Epistar, 22 Keya Road, Daya, Central Taiwan Science Park, Taichung 42881, Taiwan 5Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, HSiNchu 30010, Taiwan WeEP75 Optimisation of AlInN HFET MOCVD Growth on Large-Area Silicon Substrates Ivor Guiney, Shahrzad Hosseini Vajargah, Colin J. Humphreys and David J. Wallis Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK WeEP76 Threshold Voltage Engineering in GaN-Based HEMT by Using La2O3 Gate Dielectric Minhan Mi and Yue Hao State Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University WeEP77 Investigation of Trap Behaviors in GaN/AlGaN HEMT and Its Impact on Reliability Jie Lin1, Qijia Cheng1, Zongdai Liu1, Bin Dong1, Lingli Jiang1, Tianli Duan1, Kai Cheng2 and Hongyu Yu1,* 1South University of Science and Technology of China, Shenzhen, China 2Enkris Semiconductor Inc., China WeEP78 Over 10A Operation Normally-On AlGaN/AlN/GaN HFETs on Sapphire Substrate Junda Yan1, Quan Wang1,2, Hongling Xiao1, Chun Feng1, Wei Li1, Jiamin Gong2, Bo Zhang2, Baiquan Li4, Xiaoliang Wang1,3*, Zhanguo Wang3 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, People’s Republic of China 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China 4Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036, People’s Republic of China WeEP79 An Improved Small Signal Model of Considering Rds Frequency Dispersion for AlGaN/GaN HEMTs Chengong Yin, Yongsheng Zhang, Guochun Kang, Hong Zhu, Naiqian Zhang, Yi.Pei Dynax Semiconductor Inc. SuZhou, China WeEP80 Temperature Dependent Characteristics of AlGaN/GaN FinFETs Ki-Sik Im1,2, V. SiNdhuri1, Dong-Gi Lee1, Young-Woo Jo1, Dong-Hyeok Son1, and Jung-Hee Lee1 1School of Electronics Engineering, Kyungpook National University, Korea 2Institute of Semiconductor Fusion Technology, Kyungpook National University, Korea WeEP81 Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs Huolin Huang1,2,*, Yun-Hsiang Wang2, Yung C. Liang2, and GaNesh S. Samudra2 1School of Physics and Optoelectronic Engineering, Dalian University of Technology, China 2Department of Electrical and Computer Engineering, National University of Singapore, Singapore WeEP82 Fast Electrical Detection of DNA Hybridization Sensor Based on AlGaN/GaN HEMT Xiangmi Zhan1, Xiaoliang Wang1,2,3, Hongling Xiao1,2, Chun Feng1,2, Shenqi Qu1, Shiming Liu1, Xun Hou3, Zhanguo Wang1,2 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, China 2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, China 3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, China WeEP83 Pt-Gate AlGaN/GaN HEMT Based Hydrogen Sensor on Semi-Insulating Ammnono-GaN Substrate Kruszewski P1,2, Prystawko P1,2, Smalc-Koziorowska J1,2, Krysko M1, Plesiewicz J2, Nowakowska-Siwinska A1,2, Jachymek R2, Kacperski J2, Zajac M3, Kucharski R3 and Leszczynski M 1,2 1Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland 2Top-GaN Sp. z o.o., Warsaw, Poland 3Ammono S.A., Warsaw, Poland WeEP84 Performance of AlGaN/GaN High Electron Mobility Transistors at Low Temperature Wei Wei Chen1,2, Xiao Hua Ma1,2, Ching En Chen3, Bin Hou1,2, Jie Jie Zhu1,2, Yong Xie1,2, Jin Cheng Zhang1, and Yue Hao1,2 1School of Advanced Materials and Nanotechnology, Xidian University, People’s Republic of China 2Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, People’s Republic of China 3Department of Electronics Engineering, National Chiao Tung University, Taiwan, People’s Republic of China WeEP86 Hard Switching Characteristics of AlN-Passivated AlGaN/GaN-Onsilicon MIS-HEMTs Hanxing Wang, Cheng Liu, Qimeng Jiang, Zhikai Tang, and Kevin J. Chen Dept. of ECE, The Hong Kong University of Science and Technology, Hong Kong, China WeEP87 Improved High-Voltage Performance of Normally-Off GaN MIS-HEMTs Using Fluorineimplanted Enhanced Back Barrier Cheng Liu, Jin Wei, Shenghou Liu, Hanxing Wang, Zhikai Tang, Shu Yang and Kevin J. Chen ECE Department, The Hong Kong University of Science and Technology, Hong Kong, China WeEP88 Material and Device Properties of GaN Based HFETs Grown on 200 mm Silicon H. Yacoub1, M. Eickelkamp2, D. Fahle2, C. Mauder2, A. Alam2, M. Heuken1,2, H. Kalisch1 and A. Vescan1 1GaN Device Technology, RWTH Aachen University, Germany 2AIXTRON SE, Herzogenrath, Germany WeEP89 Fabrication and Characterization of High Breakdown Voltage Enhancement-Mode AlGaN/GaN MIS-HEMTs on Silicon Substrates Kai Fu1,*, Guohao Yu1, Zhili Zhang1, Xiaodong Zhang1, Yong Cai1, Baoshun Zhang1,* 1Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P.R. China WeEP90 Traps of AlGaN/GaN HEMTs Characterized by Space Charge Spectroscopy with Optical Excitation Yong Xie1, Xiaohua Ma1, Jiejie Zhu1, Weiwei Chen1, Bin Hou1, Jinchen Zhang2, Yue Hao2 1School of Advanced Materials and Nanotechnology, Xidian University, China 2School of Microelectronics, Xidian University, China WeEP91 Facile Control of Efficiency Droop in InGaN-Based Light Emitting Diodes: Reduction of Internal Electric Field and Effective Carrier Density in Active Region Yang-Seok Yoo1, Jong-Ho Na2, Sung-Jin Son2, and Yong-Hoon Cho1,* 1Department of Physics, KAIST Center for LED Research, and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea 2LG Innotek, LED Division, LED R&D Center, Korea WeEP92 Comparative Study of Vertical GaN Trench MOSFETs with Different Access Region Designs Yong Zhang, Kun Yu, Shahid Makhdoom, Xing Lu, and Anping Zhang State Key Lab of Electrical Insulation and Power Equipment School of Electronic and Information Engineering, Xi’an Jiaotong University, China WeEP93 Exploration into the Horizontal Tunneling of Drain Current of AlGaN/GaN HEMT on Sapphire: an Insight to Interface Traps Ankush Bag1, Partha Mukhopadhyay1 and Dhrubes Biswas2 1Advanced Technology Development Center, 2Dept. of Electrical and Electronics Communication Engineering, Indian Institute of Technology Kharagpur, India. WeOP94 Improved Electrical Properties of InGaN/GaN-Based Light-Emitting Diodes by Using GaN and InGaN Contact Layers Daesung Kang1,2, Seonho Lee1, Sulhee Kim1, Hwanhee Jeong1, June-O Song1 and Tae-Yeon Seong2,3 1LED Division, LG Innotek Co., Ltd, Paju-city 413-901, Korea 2Department of Nanophotonics, Korea University, Seoul 136-713, Korea 3Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea WeOP95 Performance Improvement of Lateral LED via Substrate Replacement Ray-Hua Horng1, Guan-Cheng Chen1, Ken-Yen Chen2, and Dong-Sing Wuu2 1Graduate Institute of Precision Engineering, National Chung HSing University, Taiwan 2Department of Materials Science and Engineering, National Chung HSing University, Taiwan. WeOP96 Decrease of Thyristor in Light-Emitting Diodes Based on GaN Structure Yao Lu1, Shuang Qu2, Chengxin Wang2 Shandong Inspur Huaguang Optoelectronics Co., Ltd., Weifang 261000, P.R.China WeOP97 Nitride-Based Light Emitting Diodes with Better Current Spreading Prepared on 10 mm n-GaN Thick Layers by HVPE Yu-An Chen1* , Chia-Wei Chang1 and Cheng-Huang Kuo1 1Institute of Lighting and Energy Photonics, National Chiao Tung University, Tainan 71150, Taiwan WeOP98 Characterization of Mn-Doped GaN Intermediate Band Solar Cells Po-Cheng Chen1, Jinn-Kong Sheu1,2, Zong-Sheng Zheng1, Ming-Lun Lee3, Yu-Hsiang Yeh1 and Wei-Chih Lai1 1Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan 2Research Center for Energy Technology and Strategy & Center for Micro/Nanon Science and Technology, National Cheng Kung University, Tainan City 70101,Taiwan 3Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan City 71001, Taiwan WeOP99 Enhancement of Modulation Bandwidth of a Light-Emitting Diode through Surface Plasmon Coupling Chun-Han Lin, Yu-Feng Yao, Chia-Ying Su, Chieh Hsieh, Hao-Tsung Chen, Charng-GaN Tu, YeanWoei Kiang, and C. C. Yang* Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan WeOP100 Highly Ga-Doped ZnO Nanoneedles for Current Spreading and Light Extraction of an InGaN/GaN Quantum-Well Light-Emitting Diode Yu-Feng Yao, Chun-Han Lin, Chia-Ying Su, Chieh Hsieh, Charng-GaN Tu, Hao-Tsung Chen, YeanWoei Kiang, and C. C. Yang* Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan WeOP101 Flexible InGaN LEDs on a Polyimide Substrate Fabricated Using a Simple Direct-Transfer Method Won-Sik Choi1,2, Si-Hyun Park2, Sung Oh Cho1,3, Jun-Beom Park1,3, Tae Soo Kim4, Jung Hoon Song4, Tak Jeong1 1Korea Photonics Technology Institute, Gwangju, Korea 2Department of Electronic Engineering, Yeungnam University, Gyeongsan 712-749, Korea 3Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea 4Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea WeOP102 High Color Rendering Index Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes Zhe Zhuang1,3, Xu Guo2,3, Fengrui Hu3, Yi Li1,3, Tao Tao1,3, Jiangping Dai1,3, Ting Zhi1,3, Zili Xie1,3, Peng Chen1,3, Dunjun Chen1,3, Haixiong Ge2,3, Xiaoyong Wang3, Min Xiao3, Bin Liu1,3,*, Yi Shi1,3, Youdou Zheng1,3 and Rong Zhang1,3** 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China 2College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China 3Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, P. R. China WeOP103 Experimental Separation of Injection and Radiative Efficiencies in InGaN/GaN Light Emitting Diodes Nan-cho Oh1, Tae-soo Kim1, Youngboo Moon2 and Jung-hoon Song1 1Department of Physics, Kongju National University, Kongju, Chungnam 314-701, South Korea 2UJL Inc, Kwangkyo-ro 145, Yeongtong-gu, Suwon-si, Gyeonggi-do, South Korea WeOP104 Reduction of Quantum Confined Stark Effect in InGaN/GaN Light-Emitting Diodes by Localized Surface Plasmon of Gold Nanoparticles Chu-Young Cho1, Kyung Ho Park1, Won-Kyu Park1, and Seong-Ju Park2* 1Applied Device and Material Department, Korea Advanced Nano fab Center, Suwon 443-270, Republic of Korea 2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea WeOP105 High-Voltage Photoconductive Switches Fabricated on Semi-Insulating HVPE GaN:Fe Template Yunfeng Chen, Hai Lu*, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China WeOP106 Current and Electroluminescence Characteristics of GaN Based Light Emitting Diodes Grown on Patterned Sapphire Substrates Jie Guan, Dawei Yan*, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu, Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, China WeOP107 Enhanced Light Emission Due to Formation of Semi-Polar InGaN/GaN Multi-Quantum Wells Wanru Zhao1, Guoen Weng2, Jianyu Wang3, Jiangyong Zhang1, Hongwei Liang4, Takashi Sekiguchi5, and Baoping Zhang1* 1Department of Electronic Engineering, Xiamen University, China 2Department of Physics, Xiamen University, China 3School of Electronic Science and Engineering, Nanjing University, China 4School of PPhysics and Optoelectronic Engineering, Dalian University of Technology, China 5National Institute for Materials Science, Japan. WeOP108 Visible Light Emitting Diodes Based on InGaN/GaN Multi Quantum Wells Grown on ScAlMgO4 (0001) Substrates - Purple to Green Spectral Region - Takuya Ozaki, Mitsuru Funato, and Yoichi Kawakami Department of Electronic Science and Engineering, Kyoto University, Japan WeOP109 Inversion of the Temperature Dependence of Quantum Efficiency of InGaN/GaN LEDs at High Current Density Ilya Prudaev, Oleg Tolbanov and Stanislav Khludkov Functional Electronics Laboratory, Tomsk State University, Russia WeOP110 Investigation of Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Wells Tao Lin1, Lingyu Wan1, Zhechuan Feng1*, and Yihua Gao2 1College of Physics Science & Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, China 2College of Physics, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China WeOP111 State-Filling and Spectral-Tuning for Self-Assembled InGaN Quantum Dots Xiaoli Ji1, Jun Ma1, Tongbo Wei1, Junxi Wang1, and Fuhua Yang2 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China 2Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China WeOP112 Tailoring Emission Intensity of Dual-Wavelength GaN-Based Light Emitting Diodes by Wide Sandwich Quantum Well Tongxing Yan, and Xiaodong Hu State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China WeOP113 Dopant-Dependent Chemical Wet Etching Behaviors of Semipolar (11-22) GaN Films Ji-Yeon Park and Sung-Nam Lee* Department of Nano-Optical Engineering, Korea Polytechnic University, 429-793, Siheung, Gyeonggi-do, KOREA WeOP114 AlGaN Heterostructure Optimization for Photodetectors Sergei Didenko, Oleg Rabinovich, Sergei Legotin, Alexander Polyakov National University of Science and Technology “MISiS”, Moscow, Russian Federation WeOP115 Current Density Dependence of Transition Energy in Blue InGaN/GaN MQW LEDs Feng Zhang1,2, Masao Ikeda1,2, Kun Zhou1,2,3, Zongshun Liu3, Jianping Liu1,2, Shuming Zhang1,2, and Hui Yang1,2,3 1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China 2Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China 3Institute of Semiconductors (CAS), Beijing 100083, P.R. China WeOP116 Temperature-Dependent Carrier Recombination of Blue InGaN Light Emitting Diodes Pengfei Tian1,2, Erdan Gu2, Martin D. Dawson2, and Ran Liu1 1School of Information Science and Engineering, Fudan University, Shanghai 200433, China 2Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, United Kingdom WeOP117 3D Simulations of InGaN Superluminescent Light-Emitting Diodes Z.Q. Li and Z.Simon Li Crosslight Software Inc., 230-3400 Lougheed HWY., VancoUVer V5M 2A4, Canada WeOP118 Quasi-One-Dimensional Gold Grating with Cap Layer as Optical Coupler for AlGaN/GaN Quantum Well Infrared Photodetector Shuai Wang1, Feng Wu1, Jun Zhang1, Zheng Gong2, Jiangnan Dai1, Yanyan Fang1, and Changqing Chen1 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China 2School of Mechanical and Electronic Engineering, Wuhan University of Technology, China WeOP119 Influence of GaN/InAlGaN/GaN Multilayer Barrier on Characteristics of InGaN-Based Multiple Quantum Well Light-Emitting Diodes Jongmin Kim, Keun Man Song, Ayoung Moon, and Jehyuk Choi Optoelectronics Convergence Lab, Korea Advanced Nano Fab Center, Korea WeOP120 Metal-Oxide-Semiconductor (MOS) III-Nitride Nanorod Visible Laser with Tunable Single and Multi-M Mode Ting Zhi, Tao Tao, Bin Liu*, Zili Xie, Yi Li, Guogang Zhang, Jiangping Dai, Zhe Zhuang, Rong Zhang*, and Youdou Zheng Jiangsu Provincial Key Laboratory of Advanced photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures Nanjing University, Nanjing 210093, People’s Republic of China WeOP121 High Efficiency Green Light Emitters - Bridging the Green Gap for Light Emitting Diodes and Lasers S. Grzanka1,2, D. Schiavone2, J. Goss1, K. Pieniak1, E. Grzanka1,2, J. Smalc-Koziorowska1,2, L. Marona1,2, R. Czernecki1,2, P. Perlin1,2 and T. Suski1 1 Institute of High Pressure Physics, PAS, Sokolowska 29/37, 01-142 Warsaw, Poland 2 TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland WeOP122 Continuous Wave Second and Third Harmonic Generation in a GaN Photonic Crystal Cavity on Silicon: High Spatial-Resolution Imaging Y. Zeng1, I. Roland1, X. Checoury1, Z. Han1, M. El Kurdi1, S. SaUVage1, B. Gayral2,3, C. Brimont4, T Guillet4, M. Mexis5, F. Semond5, and P. Boucaud1 1Institut d’Electronique Fondamentale, CNRS - Univ. Paris Sud 11, Bâtiment 220, -F 91405 Orsay,France 2Univ. Grenoble Alpes, INAC-SP2M, CEA-CNRS group "Nanophysique et Semiconducteurs", F-38000 Grenoble, France 3CEA, INAC-SP2M, CEA-CNRS group "Nanophysique et Semiconducteurs", F-38000 Grenoble,France 4Université Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34905 Montpellier, France 5CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne, France A0247 Dominant nonradiative recombination paths in Al-rich AlGaN related structures Shuhei Ichikawa1, Mitsuru Funato1, Yosuke Iwasaki2, and Yoichi Kawakami1 1Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan 2JFE Mineral Co. Ltd., Chiba 260-0826, Japan WeOP123 Effect of an ITO Current Spreading Layer on the Performance of InGaN MQW Solar Cells J. Bai, M. Athanasiou and T. Wang Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom WeOP124 GaN HEMT Terahertz Detectors with Novel Antenna Design Haowen HOU1,2, Zhihong LIU2, Jing Hua TENG3, Tomás PALACIOS4, Soo-Jin CHUA1,2,* 1Department of Electrical and Computer Engineering, National University of Singapore, Singapore 2Singapore-MIT Alliance for Research and Technology, Singapore 3Institute of Materials Research and Engineering, Singapore 4Massachusetts Institute of Technology, United States WeOP125 Improved Performance of n+-InGaN/p+-GaN Tunnel Junction with Polarization Weiwei Hu1,2,3, Shuming Zhang1,2, Yigang Chen3, Deyao Li1,2, Jianping Liu1,2, Liqun Zhang1,2, Kun Zhou1,2, Aiqing Tian1,2, Feng Zhang1,2, and Hui Yang1,2 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China 2Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China 3School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China WeOP126 Self-Driven GaN-Based Detectors with Interdigitated Finger Geometries by Controlling the Contact Barrier Height Xiaojuan Sun , Dabing Li, Hang Song, Yiren Chen, Hong Jiang, Zhiming Li, Guoqing Miao and Zhiwei Zhang State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China WeOP127 The Effects of Capacitance Characteristics of GaN-Based LEDs on the Performance of Visible Light Communication System Huimin Lu1, Honglei Li2, Yini Zhang1, Qing Han1, Jianping Wang1 1School of Computer and Communication Engineering, University of Science and Technology Beijing, China 2State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, China WeOP128 The Impact of Effective Recombination Length on Efficiency Droop of InGaN-Based Quantum Wells Light Emitting Diodes Huimin Lu1,2, Tongjun Yu1, YuebinTao1, Xingbin Li1, Zhizhong Chen1, Zhijian Yang1, Jianping Wang2, and Guoyi Zhang1 1The State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, China 2School of Computer and Communication Engineering, University of Science and Technology Beijing, China WeOP129 Efficiency Droop Mitigation in InGaN-Based LEDs with Dip-Shaped Quantum Wells Huimin Lu1,2, Tongjun Yu1, YuebinTao1, Xingbin Li1, Zhizhong Chen1, Zhijian Yang1, Jianping Wang2, and Guoyi Zhang1 1The State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, China 2School of Computer and Communication Engineering, University of Science and Technology Beijing, China WeOP130 Effect of n-AlGaN Underlayer on the Optical Properties of AlxGa1-xN/AlyGa1-yN Multiple Quantum Wells Lei Li, Yuta Miyachi, Tatsuya Tsutsumi, Makoto Miyoshi and Takashi Egawa Research Center for Nano-Device and System, Nagoya Institute of Technology, Japan WeOP131 Improved Emission Efficiency and Optical Stability in Silica Coated Carbon Quantum Dots Kang-Bin Bae1, Lee-Woon Jang1, Jin-Hyeon Yun1, Min-Ho Jang2, Yong-Hoon Cho2, Alexander Y. Polyakov3, and In-Hwan Lee1 1School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Republic of Korea 2Department of Physics, Graduate School of Nanoscience&Technology (WCU) and Graphene Research Center of KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea 3Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISiS, Moscow, Russia WeOP132 Multifunctional Hierarchical Surface Structures with High Light Extraction and Antifouling Function for Light-Emitting Diode Applications Young-Chul Leem1, Jeong-Su Park2, Joon-Heon Kim2, NoSoung Myoung2, Sang-Youp Yim2, Sehee Jeong1, Wantae Lim3, Sung-Tae Kim3, and Seong-Ju Park1,* 1School of Materials Science and Engineering, GIST, Korea 2Advanced Photonics Research Institute, GIST, Korea 3Chip Development Team, Samsung Electronics, Korea WeOP133 Enhanced Optical Output Power of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes by Co/Pt Multilayer Films and Dots Jae-Joon Kim1, Young-Chul Leem2, and Seong-Ju Park1,2 1Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Korea 2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea WeOP134 Vertically Integrated Color Tunable Light-Emitting Diodes Fabricated by Wafer Bonding and Transfer Printing Jaeyi Chun1, Kwang Jae Lee2, Young-Chul Leem2, Won-Mo Kang2, Tak Jeong3, Jong Hyeob Baek3, Hyung Joo Lee4, Bong-Joong Kim2, and Seong-Ju Park1,2,* 1Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Korea 2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea 3LED Device Research Center, Korea Photonics Technology Institute, Korea 4CF Technology Division, AUK Corporation, Korea WeOP135 Direct Laser Texturing of Ceramic Plate Phosphor for High-Brightness GaN-Based White LEDs Shuai Wang1,2, Yufeng Li1,2, Lungang Feng1,2, Jiangteng Wang1, Hao Liu1, Zhina Gong1, Wen Ding1, Feng Yun1,2, and Xun Hou1 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, China WeOP136 Fabrication of Curled Vertical GaN-Based Light Emitting Diodes Lungang Feng1,2, Yufeng Li1,2, Wen Ding1,2, Shuai Wang1,2, Hao Liu1,2, Jiangteng Wang1,2, Zhina Gong1,2, Ye Zhang1,2, Shuo Liu3, and Feng Yun1,2 1Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 3Shaanxi Supernova Lighting Technology Co., Ltd, Xi’an, Shaanxi 710077, P. R. China WeOP137 Optical Investigation of Ion Damage and Strain Relaxation on Plasma-Etched InGaN/GaN Microdisks by Scanning Near-Field Optical Microscopy and Spectroscopy Jian-An Huang, Yiyun Zhang, Cong Feng and H.W. Choi Department of Electrical and Electronic Engineering, The University of Hong Kong WeOP138 Enhancement of Light Extraction Efficiency in Vertical GaN-Based Light-Emitting Diodes with Microlens Linzhao Zhang1, Wen Ding1,2, Feng Yun1,2,*, Yaping Huang1, Liu Hao1, Deyang Xia1, Zhina Gong1, Wang Shuai1, Xiong Han1, Wang Jin1, Siqi Zhang1, Ye Zhang2, Maofeng Guo2, Shuo Liu3, Xilin Su3 1Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China 2Solid State Lighting Engineering Research Center, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China 3Shaanxi New Light Source co., LTD, Xi'an 710077, China WeOP139 Experimental Study of Impact Ionization Coefficients of Al0.45Ga0.55N Mengjun Hou and Zhixin Qin* State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China WeOP140 Novel Concepts for Photo Electricity Energy Conversion Devices Based on III-Nitride Semiconductors Liwen Sang International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan WeOP141 Improvement of Light Extraction for Target Wavelength in InGaN/GaN LEDs with ITO Dual Layer by Oblique Angle Deposition Dong-Ju Seo1 and Dong-Seon Lee1* 1School of Information and Communications, Gwangju Institute of Science and Technology(GIST), 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Korea WeOP142 Effect of Wafer Bonding and Laser Liftoff Processes on Residual Stress and Performance of GaN-B Based Vertical LED Chips Hong Wang1,2, F. Yun∗1,2,3, S. Liu3, Y.F. Li1,2, W. Ding1,2, Z.H. Wei2, W.H. Zhang2, Y.P. Huang2, Y. Zhang2 and M. F. Guo2,3 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, China 3Shaanxi Supernova Lighting Technology Co. Ltd. China WeOP143 Light Output Intensity Enhancement of GaN-Based Light-Emitting Diodes by Low Temperature Wafer Bonding, Yukun Zhao1,2, Feng Yun1,2,3, Zhenghong Wei1,2, Yufeng Li1,2, Lungang Feng1,2, Maofeng Guo2,3, Wen Ding1,2, Ye Zhang2, and Shuo Liu3 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, China 3Shaanxi Supernova Lighting Technology Co. Ltd, China WeOP144 Theoretical Analysis of the Infulence of Band Tail Defects on pin InGaN Solar Cells Baozhu Wang 1,2, Lichao Zhang1, Min Wang1, Hongling Xiao2 and Xiaoliang Wang2 1School of Information Science and Engineering, Hebei University of Science and Technology, China 2Institute of Semiconductors, Chinese Academy of Sciences, China WeOP145 Color Tuning GaN-Based White Light-Emitting Diodes by Defect Engineering Yaping Huang1, Feng Yun1,2*, Yufeng Li1,2 and Wen Ding1,2 1Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, China 2 Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, China WeOP146 Some Studies on Efficency Droop Effect in High Power GaN LED Devices Chengxin Wang, Shuang Qu, and XianGang Xu 1Shandong Inspur Huaguang Optoelectrons Co. Ltd, 2Institute of Crystal Materials, Shandong University WeOP147 Efficiency Enhancement of InGaN/GaN Multiple Quantum Wells Solar Cells with a Vertical Structure Jiangteng Wang1,2, Wen Ding1,2, Yufeng Li2, Feng Yun*1,2, Shuai Wang2, LunGang Feng2, Hao Liu2, Zhina Gong2, Jin Wang2, Xilin Su3, and Shuo Liu3, 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, People’s Republic of China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, People’s Republic of China 3Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710077, People’s Republic of China WeOP148 Ni/Ag/Ti/Au Ohmic Contact to p-GaN with High Reflectivity and Low Contact Resistivity for Vertical LED Chips Zhenghong Wei1,2, Feng Yun1,2, Yufeng Li1,2, Wen Ding1,2, Ye Zhang2, Yaping Huang2, and Hong Wang2 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, China WeOP149 Improving Measurement on Junction Temperature by Dual-Wavelength Light Emitting Diodes Yukun Zhao1,2, Feng Yun1,2,3,*, Lugang Feng1,2, Shuai Wang1,2, Yufeng Li1,2, Xilin Su3, Maofeng Guo2,3, Wen Ding1,2, and Ye Zhang2 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, China 3Shaanxi Supernova Lighting Technology Co. Ltd, China WeOP150 Interface Characteristics for Ti/ Al/ Pt/ Au Contacts to Ga-Face and N-Face Surface of Oxygen Doping GaN by X-Ray Photoelectron Spectroscopy Chia-Lung Tsai1, Yi-Keng Fu1, Han-Chieh Ho1 11Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, HSiNchu 31040, Taiwan WeOP151 Improvement of Light Output of InGaN/GaN Multiple-Quantum Wells Light-Emitting Diode Grown on Silicon (111) by Using Nano-Porous GaN Layer Kwang Jae Lee1, Semi Oh1, Sang-Jo Kim1, Jung-Won Park2, Seung-Jae Lee3, Jae-Chul Song3, Jong Hyeob Baek3 and Seong-Ju Park1,* 1School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea 2EPI Development, R&D Center, ILJIN LED Co., LTD, Gyeonggi-Do 425-090, Republic of Korea 3Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea WeOP152 Effects of Hydrogen Removals on the Electrical Characteristics of GaN-Based Lihgt-Emitting Diodes Eunjin Jung1, Kyurin Kim1, Beo Deul Ryu1, Min Han1, Kangbok Ko1, Chang-Hee Hong1, June key Lee2 and Hyunsoo Kim1,* 1School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea 2Department of Materials Science and Engineering, Chonnam National University, Gwangju 500757, Korea WeOP153 Optical and Electrical Properties of InGaN-Based Structures with Subwavelength Structural Array Chun-Yuan Pan1, Lei-Ming Yang1, Ching-Wen Chang1, and Li-Wei Tu1,2 1Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan 2Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University, Kaohsiung 80708, Taiwan WeOP154 Defect Distribution in InGaN/GaN Light-Emitting Diodes Investigated by Using Frequency-Dependence Capacitance-Voltage Measurement Tae-Soo Kim1, Moon-Taek Hong1, Nan-Cho Oh1, Hye-Jung Yu1, Tae-Kyun Eom1, Seung Young Lim 1, Yungboo Moon2, Soon-Ku Hong3, Jong-Hyeob Baek4, Taehoon Chung4, and Jung-Hoon Song1* 1Dept. of Physics, Kongju National University, Kongju 314-701, South Korea 2UJL Ltd, Gwangju 506-253, South Korea 3Dept. of Materials Science & Engineering, Chungnam National University, Daejeon 305-764, South Korea 4LED R&DB Division, Korea photonics Technology Institute, Gwangju 500-779, South Korea WeOP155 The Growth and Fabrication of Purely Sidewall InGaN/GaN Coreshell Nanorod Green Light Emitting Diodes Da-Wei Lin1, Jhih-Kai Huang1, An-Jye Tzou1,2, Wei-Chi Hsu1, Tsung Sheng Kao1, Tzu-Pei Chen1, Hao-Chung Kuo1, Gou-Chung Chi1, Yang-Fang Chen3, Chun-Yen Chang2, Jung Han4, and Martin D. B. Charlton5 1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, HSiNchu 330010, Taiwan 2Department of Electrophysics, National Chiao Tung University, HSiNchu 30010, Taiwan 3Department of Physics, National Taiwan University, Taipei 10617, Taiwan 4Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA 5Department of Electronics and Computer Science, Faculty of Physical Sciences and Engineering, University of Southampton, Southampton SO17 1BJ, United Kingdom WeOP156 Hybrid Transparent Conductive Electrodes Embedded with Pt Nanoclusters for High-Efficiency GaN-Based Light-Emitting Diodes Kyurin Kim, Youngun Gil, Eunjin Jung, and Hyunsoo Kim School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 461-756, Republic of Korea WeOP157 Tuning the Recombination Rate of InGaN/GaN Nanopillars with Voltage-Induced Space Charge Regions C. Feng, J. A. Huang, and H. W. Choi Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong WeOP158 Improving the Optical Performance of GaN-Based LEDs with Thermally Reduced Graphene Oxide as an Current Spreading Electrode Beo Deul Ryu, Min Han, Kang Bok Ko, Young Jae Park, Ko Ku Kang, Eunjin Jung, Kyurin Kim, Hyunsoo Kim, Jaehee Cho, and Chang-Hee Hong* School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, 664-14, Dukjin-Dong, Dukjin-Ku, Jeonju, 561-756, South Korea WeOP159 Enhancement of Light Extraction Efficiency for InGaN Based LEDs with Multi-Layer Graphene/ITO N-Contacted Electrode Tae Kyoung Kim, Yu Lim Lee, Seung Kyu Oh, Yu Jung Cha and Joon Seop Kwak* Dept. of printed Electronics Engineering (BK21 plus), Suncheon National University, Jeonnam, 540-742, Korea WeOP160 Emission Characteristics of Blue-Light Emitting Transistors with an InGaN Single Quantum Well Junichi Nishinaka1,*, Kazuhide Kumakura1, and Hideki Yamamoto1 1NTT Basic Research Laboratories, NTT corporation, Japan WeOP161 InxGa1-XN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77% Shiming Liu1, Hongling Xiao1, Quan Wang1,2, Junda Yan1, Xiangmi Zhan1, Jiamin Gong2, Xiaoliang Wang1,3,* and Zhanguo Wang1,3 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, People’s Republic of China 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China WeOP162 Deep Level Traps in GaN LED Grown on 8 Inch Si (111) Substrate by MOCVD Nguyen Xuan Sang1, Eugene A. Fitzgerald1,2, and Chua Soo Jin1,3 1Low Energy Electronic System (LEES) IRG, Singapore MIT Alliance for Research and Technology Center, 1 CREATE way, Singapore 138602 2Department of Electrical and Computer Engineering, National University of Singapore, Block E4, Engineering Drive 3, Singapore 117583 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Room 13-5153, 77 Mass. Ave., Cambridge, MA 02139 WeOP163 Enhanced Performance of InGaN/GaN MQWs LED with ZnO:Ga Transparent Conducting Layer Sang-Jo Kim1, Kwang Jae Lee1, Semi Oh1, Byeong-Hyuk Kim2, and Seong-Ju Park1,2,a) 1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea 2Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology Republic of Korea WeOP164 Impact of Number of Quantum Wells on the Efficiency of InGaN/GaN Light Emitting Diodes Operating in the Droop Regime M.A. Hopkins1, M.J. Kappers2, E.J. Thrush2, S. Hammersley3, R.A. Oliver2, B. Rouet LEDuc2, P. Dawson3, J. Bruckbauer4, C.J. Humphreys2, R.W. Martin4, D.W.E. Allsopp1 1Dept. of Electronic and Electrical Engineering, University of Bath, UK 2Dept. of Materials Science and Metallurgy, University of Cambridge, UK 3School of Physics and Astronomy, Photon Science Institute, University of Manchester, UK 4Department of Physics, SUPA, University of Strathclyde, UK WeOP165 Efficient Control of Polarization from Light Emitters Based on Elongated Pyramidal Nitride Quantum Dots P.O. Holtz, C.W. Hsu, M. Eriksson, H. Machhadani, T. Jemson, K. F. Karlsson, A. Lundskog, and E. Janzén Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83, Linköping, Sweden WeOP166 Trasparency of GaN Substrates Obtained by Ammonothermal Method in the Mid-Infrared and THz Spectral Region R. Kudrawiec1, M. Motyka1, J. Misiewicz1, R. Kucharski2, and M. Zając2 1Faculty of Fundamental Problems of Technology, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland 2AMMONO SA, Prusa 2, 00-493 Warsaw, Poland WeOP167 Confocal Microscopic Analysis of Optical Crosstalk from Micropixel Light-Emitting Diodes K.H. Li, Y.F. Cheung, W.S. Cheung, and H.W. Choi Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong WeOP168 On-Chip Addressable Schottky-on-Heterojunction Light-Emitting Diode Arrays on AlGaN/GaN-On-Si Platform Xi Tang, Baikui Li, Yunyou Lu, and Kevin J. Chen Dept. of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong WeOP169 Optical Characteristics of GaN/Si Micro-Pixel Light-Emitting Diode Arrays W.S. Cheung1, K.H. Li1, C.W. Tang2, C. Zhao2, K.M. Lau2 and H.W. Choi1 1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 2Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong WeOP170 Fabrication of ac Driven Metal-Semiconductor-Metal Light-Emitter Sanghoo Han1 and Jinsub Park1,2 1Dept. of Electronics & Computer Engineering, Hanyang University, Republic of Korea 2Dept. of Electronic Engineering, Hanyang University, Republic of Korea WeOP171 Investigation on the Electrical Characteristics of Ti/Al-Based Ohmic Contact to (0001) c-Plane and (11-22) Semi-Polar n-GaN Jae-Seong Park1, Jaecheon Han2 and Tae-Yeon Seong1,* 1Department of Materials Science and Engineering, Korea University, South Korea 2Department of LED BuSiNess, Chip Development Group, LG Innotek, South Korea WeOP172 Optical Characterization of Bright Blue (InGaN/GaN) Multi-Quantum-Well LEDs Idris Ajia1 and Jianchang Yan2, Zhiqiang Liu2 and Iman Roqan1 1Pshysical Sciences and Engineering division, KAUST, Thuwal, Saudi Arabia 2R&D Center for Semiconductor Lighting, Chinese Academy of Science, Beijing, China WeOP173 InGaN/GaN MQW ΜLED and μPD on Silicon Substrate for On-Chip Communication Li Zhang1,2, Bing Wang1, Cong Wang1,3, Kenneth E. Lee1, Jurgen Michel1,4, Li-Shiuan Peh1,4 and Soo Jin Chua1,2 1Singapore-MIT alliance for research and technology, Singapore 2NUS graduate school for integrative sciences and engineering, Singapore 3School of Electrical and Electronic Engineering, Nanyang Technological University, SiNgpore 4Massachusetts institute of technology, USA WeOP174 Effect of Superlattice on Light Output Power for InGaN Based Light-Emitting Diodes Grown on GaN underlying Substrates with Different Dislocation Density K. Sugimoto, Y. Dempo, N. Okada, and K. Tadatomo Graduate School of Science and Engineering, Yamaguchi University WeOP175 GaN-Based Phosphor-Free White Light-Emitting Diodes Using Double Concentric Truncated Pyramid Structures Seung-Hyuk Lim, Young-Ho Ko, Christophe Rodriguez, Su-Hyun Gong, and Yong-Hoon Cho* 1Department of Physics and KI for the NanoCentury, 2Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea WeOP176 High Optical and Structural Quality InGaN/GaN Single and Multiple Quantum Well Grown on (-201) Oriented -Ga2O3 Mufasila Mumthaz Muhammed1 and Iman Roqan1 1King Abdullah University of science and technology, Saudi Arabia. WeOP177 Achieving Directional Light Emission from InGaN/GaN Vertical Light Emitting Diodes Using Wavelength Scale Photonic Structures S.A. Fox1, S.M. Lis1, P.A. Shields1, S. Nigrin2, S. Harrington2, D.J. Wallis2, G. Thompson3 and D.W.E. Allsopp1 1Dept. of Electronic and Electrical Engineering, University of Bath, England 2Plessey Semiconductor Limited, Tamerton Road, Roborough, Plymouth, England 3Digital Projection Limited, Greenside Way, Middleton, Manchester, England WeOP178 Study of a GaN-Based LED Substrate Reclaimed Technologies Shih-Yung Huang1, Wei-Kai Wang2 and Po-Rung Lin3 1Department of Industrial Engineering and Management, Da-Yeh University, Changhua, Taiwan 2Department of Materials Science and Engineering, Da-Yeh University, Changhua, Taiwan 3Department of Materials Science and Engineering, National Chung HSing University, Taichung, Taiwan WeOP179 Power Density Dependent Photoluminescence Spectroscopy and Raman Mapping of the Strain of Semi-Polar and Polar InGaN/GaN Multiple Quantum Well Samples. Rachel Southern-Holland1, Matthew Halsall1, Tao Wang2 and Yipin Gong2 1Photon Science Institute and School of Electrical and Electronic Engineering, The University of Manchester, Oxford Road, Manchester M13 9PL, UK. 2Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 33JD, United Kingdom WeOP180 Influence of Quantum Well Inhomogeneities on Optical Gain of InGaN/GaN Quantum Wells M. Gladysiewicz1,2, M. Wartak2, and R. Kudrawiec1 1Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland 2Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5, Canada WeOP181 Enhanced Optical Performance of Monolithically Integrated HEMT-LED by Buffer Optimization Chao Liu, Yuefei Cai, and Kei May Lau Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong WeOP182 A Ni/Ga-Doped ZnO Layer Deposited by RF-Magnetron Sputtering for p-Type Ohmic Contact of GaN-Based LEDs Jongyeul Jeong1, Taekkyun Kim1, Ji-Young Baek1, Dongjun Kim1, Seungho Yang2, Jee-Young Chang2, and Kyoung-Kook Kim1* 1Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi-Do 429-793, Republic of Korea 2Heesung Metal LTD, 693-1, Namdong-Gu, Incheon, Republic of Korea WeOP183 Angular Distribution Modulating Light Extraction Efficiency in Al-Rich AlGaN Light-Emitting Diodes Xinjuan Chen, Xiaohui Feng, Zhizhong Chen, Xiangning Kang, Tongjun Yu* State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China WeOP184 Tunable, Full-Color Nanowire Light Emitting Diode Arrays on Si and Sapphire Renjie Wang, Yong-Ho Ra, Songrui Zhao, Xianhe Liu, H. P. T. Nguyen, Ishiang Shih and Zetian Mi* Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada WeOP185 Influence of Wet Etching of n-Polar GaN on the Performance of GaN-Based Vertical Structure LEDs Jian Ma1, Zhizhong Chen1*, Qianqian Jiao1, Shuang Jiang1, Junze Li1, Shengxiang Jiang1, Yulong Feng1, Yifan Chen1, Tongjun Yu1, Guoyi Zhang1,2 1State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2SiNo Nitride Semiconductor Co., Ltd, Dongguan 523500, Guangdong, China WeOP186 Observation of V-Defects in InGaN/GaN MQWs on Freestanding GaN Substrate Xiaohui Feng1, Kun Wang1, Xingbin Li1, Jiejun Wu1, Xiangning Kang1 and Tongjun Yu1* 1Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China WeOP187 Vertical Thin-Film InGaN-Based Light Emitting Diodes Grown on Mesa Patterned 100-mm Si Substrates H. Haas1*, B. Damilano2, E. FraysSiNet2, M. Rabarot1, A. Fargeix1, G. Feuillet1, J.Faugier-Tovar3, F. De Crecy1, J. Brault2, D. Turover3, F. Semond2, and Y. Cordier2 1Univ. Grenoble Alpes, F-38000 Grenoble, France CEA, LETI, MINATEC Campus, F-38054 GRENOBLE, France 2CRHEA-CNRS, Rue B. Gregory, 06560 Valbonne, France 3SILSEF SA, 382 rue louis Rustin, Archamps Technopole, 74160 ARCHAMPS, France WeOP188 Surface Charge Properties, p-Type Conduction, and Electroluminescence Emission of InN Nanowires Grown Directly on Si Songrui Zhao, Binh. H. Le, and Zetian Mi Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada WeOP189 Molecular Beam Epitaxial Growth and Characterization of AlN Nanowire LEDs on Si S. Zhao, A. T. Connie, M. H. T Dastjerdi, S. Sadaf, I. Shih, and Z. Mi Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada WeOP190 Color Control of Nanowire InGaN/GaN Light Emitting Diodes by Post-Growth Treatment Hezhi Zhang1, Gwénolé Jacopin2, Vladimir Neplokh1, Ludovic Largeau3, François Julien1, Olga Kryliouk4, Maria Tchernycheva1 1Institut d’Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud XI, 91405 Orsay cedex, France 2ICMP LOEQ Ecole Polytechnique F ederale de Lausanne, 1015 Lausanne, Switzerland 3LPN-CNRS, UPR20, Route de Nozay, 91460 Marcoussis, France 4GLO-USA, 1225 Bordeaux Dr, Sunnyvale, CA, 94086, USA WeOP191 Selective Growth of ZnO Nanorod on ZnO Hexagon Pattern of III-nitride Light-Emitting Diodes Ji-Yeon Park, Hyo-Soo Son and Sung-Nam Lee* Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Korea, 429-793 WeOP192 Mixed Color InGaN Light Emitter Using Nanostructure Daehong Min, Jongjin Jang, Kyuseung Lee, Donghwy Park, Bobae Kang, and Okhyun Nam Convergence Center for Advanced Nano Semiconductor, Korea Polytechnic University, South Korea WeOP193 Polarization Modulated InGaN/GaN Nano-Photoelectrodes for Hydrogen Generation Tao Tao1,2, Ting Zhi1,2, Bin Liu1,2,*, MingXue Li2,3, ZiLi Xie1,2, XuZhao Chai1,2, Wang Gao1,2, Peng Chen1,2, WenJun Luo2,3, ZhaoSheng Li, Zhigang Zou2,3, Rong Zhang1,2,*, and YouDou Zheng1,2 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China 2National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China 3Ecomaterials and Renewable Energy Research Center (ERERC), School of Physics, Nanjing University, Nanjing 210093, People’s Republic of China WeOP194 Family of Core-Shell Cu@Alloy Nanosilk Network for Transparent Ohmic Electrode on High Al-Content AlGaN Huachun Wang1, Hongmei Xu1, Chenping Wu1, Abdul Majid Soomro1, Huizhang Guo2, Tongchang Zheng1, Shuping Li1, Junyong Kang1 and Duanjun Cai1,* 1Fujian Key Laboratory of Semiconductor Materials and Applications, School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, China 2Institute for Building Materials, ETH Zurich, Zurich 8092, Switzerland WeOP195 The Optical Properties of Meh-Ppv/GaN-Nanorods Heterostructure Fulong Jiang1, Peng Chen1,2, Yangyang Li1, Guofeng Yang1, Bin Liu1, Zili Xie1, Xiangqian Xiu1, Zhenlong Wu2, Zhou Xu2, Xuemei Hua1, Ping Han1, Yi Shi1, Rong Zhang1, Youdou Zheng1 1Key laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, China 2Institute of Optoelectronics, Nanjing University and Yangzhou, Yangzhou 225009, China WeOP196 Surface-Plasmon-Enhanced InGaN Detectors with Silver Nanoparticles Xiaotong Liu1,2, Dabing Li1*, Xiaojuan Sun1, Zhiming Li1, Hong Jiang1, and Yiren Chen1 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, China 2University of Chinese Academy of Sciences, China WeOP197 Arrays of GaN Nanowires Hosting Polar and Semipolar InGaN Quantum Dots Žarko Gačević1, Snežana Lazić2, Ekaterina Chernysheva2, Almudena Torres-Pardo3, José María González-Calbet3, José Manuel Calleja2, and Enrique Calleja1 1ISOM-ETSIT, Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid, Spain 2Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain 3 Dept. Química Inorgánica, Universidad Complutense, 28040, Madrid, Spain WeOP198 Characterization of GaN/Eu-Doped GaN Multiple-Nanolayer Structures Grown by Low-Temperature Organometallic Vapor Phase Epitaxy Wanxin Zhu1, Dolf Timmerman1, Brandon Mitchell2, Atsushi Koizumi1, Tom Gregorkiewicz3 and Yasufumi Fujiwara1 1Graduate School of Engineering, Osaka University, Japan 2Department of Physics and Astronomy, University of Mount Union, USA 3Van der Waals - Zeeman Institute, University of Amsterdam, The Netherlands WeOP199 Hybrid Light-Emitting Diode Comprised of Colloidal Quantum Dots on n-ZnO/(InGaN/GaN) Multi-Quantum-Wells/p-GaN Utilizing Nonradiative Energy Transfer Jin Hyeon Yun1, Dae Woo Jeon2 and In Hwan Lee1,* 1School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Chonju 561-756, Korea 2Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409, USA WeOP200 Indium Tin Oxide Nanorods Formation via Polystyrene Spheres Catalyst for Light Extraction Zhina Gong1,2, Qiang Li1,2, Yufeng Li1,2, Wen Ding1,2, Hao Liu1,2, Shuai Wang1,2, Maofeng Guo2, Ye Zhang2, Shuo Liu3, Xilin Su3 and Feng Yun1,2 1Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 3Shaanxi Supernova Lighting Technology Co.Ltd, Xi’an, Shaanxi 710077, P. R. China WeOP201 Design and Fabrication of Nanorod Arrays on p-GaN for InGaN/GaN Multiple Quantum Wells Solar Cells Wen Ding1,2, Feng Yun1,2, Deyang Xia2, Jin Wang2, Yanxin Xing2, Zhongxiao Song3, Qiang Li2, Yaping Huang2, Minyan Zhang2, Ye Zhang2, Maofeng Guo2, Shuo Liu4, Xilin Su4 1Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 2Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 3State Key Laboratory for Mechanical Behavior of the Material, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China 4Shaanxi Supernova Lighting Technology Co., Ltd, Xi’an, Shaanxi 710077, P. R. China WeOP202 Enhanced Light Extraction of InGaN/GaN Light Emitting Diode by Using Ni(OH)2 and NiO Nanoparticles Dong Su Shin1, Do Hyun Kim1, K. Mageshwari1 and Jinsub Park1,2 1Department of Electronics and Computer Engineering, Hanyang University, South Korea 2Department of Electronic Engineering, Hanyang University, South Korea WeOP203 Optical Characterization of Magnesium Incorporation in p-GaN Layers for Core-Shell Nanorods I. Gîrgel1, A. Šatka2,3, J. Priesol2, P.-M. Coulon1, E. Le Boulbar1, D.W.E. Allsopp1, and P.A. Shields1 1Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK 2Slovak University of Technology, Institute of Electronics and Photonics, 812 19 Bratislava, Slovakia 3International Laser Centre, 841 04 Bratislava, Slovakia WeOP204 Effect of the Periodicity on Light Extraction from the GaN-Based Green Nanoporous LED Yulong Feng, Zhizhong Chen*, Shengxiang Jiang, Shuang Jiang, Qianqian Jiao, Tongjun Yu, Guoyi Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, China WeOP205 Enhanced Performance of InGaN/GaN Laser Diodes for Improvement of Quantum Well Uniformity Pengyan Wen1,2, Deyao Li1,2, Shuming Zhang1,2, Jianping Liu1,2, Liqun Zhang1,2, Kun Zhou1,2, Aiqin Tian1,2, Feng Zhang1,2 and Hui Yang1,2 1Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, China 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China WeOP206 Characteristics of GaN-Based Vertical Cavity Surface Emitting Laser with Nanoporous Distributed Bragg Reflectors Jongoh Park1, Seung-Min Lee1, Jin-Ho Kang1, Mohamed Ebaid1, Su-Hyun Gong2, Yong-Hoon Cho2, and Sang-Wan Ryu1 1Department of Physics, Chonnam National University, Korea 2Department of Physics and KI for the Nano Century, Korea Advanced Institute of Science and Technology, Korea WeOP207 C-Plane Green InGaN Laser Diodes Grown by MOCVD Jianping Liu1,2, Liqun Zhang1,2, Aiqin Tian1,2, Zengcheng Li1,2, Feng Zhang1,2, Masao Ikeda1,2, Shuming Zhang1,2, Deyao Li1,2, Hui Yang1,2 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China 2Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, China WeOP208 Negative T0 InGaN Laser Diode Andtheir Degradation. Piotr Perlin1,2 , Agata Bojarska1, Robert Czernecki1,2, Mike Leszczynski1,2 and Tadek Suski1 1Institute of High Pressure Physics, “Unipress”, Warsaw Poland 2TopGaN Ltd., Warsaw Poland WeOP209 Low Threshold Lasing of GaN-Based VCSELs Emitting in the Blue-Green Guoen Weng1, Wenjie Liu1, Yang Mei2, Yongping Zeng2, Jiangyong Zhang2, Leiying Ying2, Zengcheng Li3, Jianping Liu3, Hui Yang3 and Baoping Zhang1,2 1Department of Physics, Xiamen University, China 2Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University, China 3Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China WeOP210 Improved Carrier Injection in GaN-Based VCSEL via AlGaN/GaN Superlattice Electron Blocking Layer Dan Hua Hsieh1, An Jye Tzou1,2, Chun-Yen Chang2, Hao Chung Kuo1 1Department of PPhotonic & Institute of Electro-Optical Engineering, National Chiao Tung University, HSiNchu 30010, Taiwan 2Department of Electrophysics, National Chiao Tung University, HSiNchu 30010, Taiwan WeOP211 New Findings in the Degradation of InGaN Green Laser Diodes: Results of Combined Stress Tests and Quantitative Cl Easurements Nicola Trivellin1,2, Matteo Meneghini2, Carlo De Santi2, Gaudenzio Meneghesso2, Enrico Zanoni2, David Gachet3, Jean Berney3 1LightCube SRL, Viale navigazione interna 51, Padova (PD) Italy 2Department of information engineering, University of Padova, Italy 3 Attolight AG, Lausanne, Switzerland WeOP212 Photo-Response Characteristics of AlGaN-Based Metal-Semiconductor-Metal Photodetctors at Vacuum Ultra-Violet Wavelength Region Dong Zhou, Hai Lu*, Dunjun Chen, Fangfang Ren, Rong Zhang and Youdou Zheng Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China WeOP213 Light Extraction Efficiency Enhancement by Optimizing Device Geometry in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes. Manabu Taniguchi1,2, Guo-Dong Hao1, Kousei Nakaya1, and Shin-ichiro Inoue1,2 1Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Japan 2Department of Mechanical Engineering, Kobe University, Kobe, Japan WeOP214 Enhancement of Wall-Plug Efficiency in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the p-Electrode Geometry Guo-Dong Hao, Manabu Taniguchi, Kousei Nakaya, and Shin-ichiro Inoue Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe 651-2492, Japan WeOP215 Improvement of Light Extraction Efficiency of GaN-Based UV-LEDs by Nano-Void Structured Reflector Semi Oh1, Kab Ha2, Kwang Jae Lee1, Sang-Jo Kim1, Jae-Joon Kim3, Kyoung-Kook Kim2, and SeongJu Park1,3,* 1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea 2Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi-Do, 429-793, Korea 3Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea WeOP216 InGaN/GaN Core/Shell Nanowires for Visible to Ultraviolet Range Photodetection Hezhi Zhang1,*, Agnès Messanvi1,2, Andrey Babichev3, Xing Dai1, Christophe Durand2, Joël Eymery2, Pierre Lavenus1, Lorenzo Rigutti4, François H. Julien1, Maria Tchernycheva1 1Institut d’Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud XI, 91405 Orsay, France 2Equipe mixte “Nanophysique et semiconducteurs,” CEA/CNRS/Université Joseph Fourier, CEA, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France 3St. Petersburg Academic University, Khlopin Str. 8/3, 195220 St. Petersburg, Russia 4Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, University of Rouen and INSA Rouen, 76801 St. Etienne du RoUVray, France WeOP217 Ag-Mesh-Combined Graphene as a Current Spreading Layer in Ultraviolet Light-Emitting Diodes Jung-Hong Min1, Ki-Young Kim1, Woo-Lim Jeong1, Sang-Bae Choi1, and Dong-Seon Lee1,* 1School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 5500-712, Korea WeOP218 Ultraviolet LEDs Based on GaN on Si Technology Jiaxing Wang, Legong Liu, Junxia Situ, Lunyou Yang, Qian Sun, Zhen Chen, Seogwoo Lee, Meoungwhan Cho, Hanmin Zhao Latticepower Corporation, China WeOP219 Ni Nano-Particles Plated Swcnts Transparent Conductive Electrodes in 375nm AlGaN-Based UVLEDs Jun-Beom Park1,2, Hyung-Jo Park2, Tak Jeong1, Jong-Hyeob Baek1, Jong-Hun Han2 and Jun-Soek Ha2 1LED Research Division, Korea Photonics Technology Institute, SOUTH KOREA 2Department of Advanced Chemicals & Engineering, Chonnam National University, SOUTH KOREA WeOP220 Improvement of UVA GaN Vertical LEDs with Novel DBR Mirrors Shiou-Yi Kuo and Tien-chang Lu* Department of Photonics, National Chiao-Tung University, Taiwan WeOP221 272-nm AlGaN-Based Multiple-Quantum-Well Lasers with Facets Prepared Using a Two-Step Etching Method Yingdong Tian, Yun Zhang, Jianchang Yan, Xiang Chen and Jinmin Li Semiconductor Lighting Technology R & D Center, Institute of Semiconductors, China WeOP222 Deep Ultraviolet Lasing from AlGaN/Al(Ga)N Multiple-Quantum-Well Structures Jianchang Yan, Yingdong Tian, Yun Zhang, Junxi Wang and Jinmin Li Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China WeOP223 Performance Improvement of Deep Ultraviolet Light-Emitting Diodes by Staircase AlGaN Quantum Barriers Yanan Guo, Yun Zhang*, Jianchang Yan, Yingdong Tian, Xiang Chen, Junxi Wang and Jinmin Li Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, China WeOP224 Effect of Indium in AlxGa1-xN/AlyGa1-yN MQWs for the Development of Deep UV Laser Structures in the Form of Graded-Index Separate Confinement Heterostructure (GRINSCH) Haiding Sun, Emanuele Francesco Pecora, Luca Dal Negro, Theodore D. Moustakas Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary’s Street, Boston, Massachusetts 02215, United States WeOP225 Improved Optical Output Power of Near-Ultraviolet Light-Emitting Diodes by Localized Surface Plasmon of Colloidal Silver Nanoparticles Sang-Hyun Hong1, Jae-Joon Kim1, Jang-Won Kang2, Yen-Sook Jung1, Dong-Yu Kim1, Sang-Youp Yim3, and Seong-Ju Park1,2 1Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, South Korea 2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, South Korea 3Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, South Korea WeOP226 AlN Based Nanostructures Fabricated on a Vicinal Sapphire Substrate for Deep-Ultraviolet Optoelectronic Applications Jinwan Kim, Daeyong Eom, Jaedo Pyeon, Minhwan Jeon, Kyungjae Lee, and Okhyun Nam* Convergence Center for Advanced Nano Semiconductor (CANS), Korea Polytechnic University, 237 sangidaehakro, Siheung-si, Gyeeonggi-do, Korea WeOP227 Long Life Time of 310nm and 280nm Deep UV LEDs Grown on Sapphire Substrate Yuan Gao, Zhaohua Pan, Yanfeng Zhang, Jinshun Yue, Shuai Wu, Guohua Zhang Qingdao Jason Electric Ltd China WeOP228 U-Shape Efficiency-Versus-Current Curves in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Jun Hyuk Park1, Guan-Bo Lin2, Dong Yeong Kim1, Jong Won Lee1, Jaehee Cho3, E. Fred Schubert2, and Jong Kyu Kim1 1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Gyeongbuk, 790-784, Republic of Korea 2Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA 3School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea WeOP229 Group III-Nitride Based Ultraviolet Light Emitter Using GaN Nano-Needle Field Emitter Jong-Hoi Cho1, Je-Hyung Kim1, Ju-Hyung Ha2, Jun-Mok Ha3, Sung-Oh Cho3, Won-Jae Lee2 and Yong-Hoon Cho1,* 1Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea 2Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University, Busan 614-714, Republic of Korea 3Department of Nuclear & Quantum Eng. KAIST, Daejeon, 305-701, Republic of Korea WeOP230 Realization of UVLEDs Using InAlN Based Quantum Wells Pietro Pampili1,2, Vitaly Z. Zubialevich1, Haoning Li1,2, Sergey V. Ivanov3, Valentin N. Jmerik3, Dmitrii V. Nechaev3, Mahbub Akhter1, Pleun P. Maaskant1, Brian Corbett1, and Peter J. Parbrook1,2 1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland 2School of Engineering, University College Cork, Cork, Ireland 3Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia WeOP231 The Electrical and Optical Properties of Deep Ultraviolet Light Emitting Diodes with Emission Wavelength of 269nm and 279nm Jiangping Dai, Bin Liu*, Zhe Zhuang, Ting Zhi, Tao Tao, Zili Xie and Rong Zhang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, P. R. China WeOP232 Microstructure and Photoluminescence of InN Doped with Mg Sergey Khromov1, Per Persson1, Bo Monemar1, Xinqiang Wang2, Akihiko Yoshikawa3, Martin Eriksson1, Per-Olof Holtz1, Erik Janzén1, and Vanya Darakchieva1 1Semiconductor Materials, IFM, Linköping University, Sweden 2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, China 3Center for SMART Green Innovation Research, Chiba University, Japan WeLP232 Vertical Conducting AlGaN Deep-Ultraviolet Light-Emitting Diodes on n-Type 6H-SiC Substrate Hongwei Liang1, Pengcheng Tao1, Xiaochuan Xia1, Yang Liu1, Yingmin Luo1 and Guotong Du1,2 1School of Physics and Optoelectronic Engineering, Dalian University of Technology, China 2State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, China WeLP233 Numerical Studies of Localized Surface Plasmon Enhanced Light Emitting Diodes Lei Liu, Zhiguo Yu, Shichao Zhu, Pingbo An, Chao Yang, Lixia Zhao*, Junxi Wang, and Jinmin Li Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China WeLP234 Increased Interface Reflection and Transmission Coefficient of GaN-Based LEDs on Patterned Sapphire Substrate D. X. Wu, P. Ma*, A. G. Zhen, J. M. Li 1Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences 2State Key Laboratory of Solid State Lighting 3Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application WeLP235 Surface Plasmon Enhanced Nanoporous GaN-Based LEDs Light-Emitting Diodes Zhi-Guo Yu1, Li-Xia Zhao1, Jun-Xi Wang1 and Jin-Min Li1 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China WeLP236 Gate First Metal-Oxide-Semiconductor AlGaN/GaN HFETs Fabricated with a Low Temperature Ohmic Process Liuan Li1, Jiaqi Zhang2, Yang Liu1, and Jin-Ping Ao2 1School of Physics and Engineering, Sun Yat-Sen University, China 2Institute of Technology and Science, The University of Tokushima, Japan WeLP237 Surface Recombination Impact on Performance of High-Power Light-Emitting Diodes Kirill A. Bulashevich and Sergey Yu. Karpov STR Group ‒ Soft-Impact, Ltd. St.Petersburg, Russia WeLP238 Selective Area Growth of GaN Nanocolumns: Effect of Lattice Symmetry Ping Wang1, Chih-Shan Tan2, Xiantong Zheng1, Xin Rong1, and Xinqiang Wang1* 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China 2Department of Materials Science and Engineering, National TSing Hua University, HSiNchu 30013, Taiwan WeLP239 A Novel MOCVD Showerhead Special for GaN-On-Si & AlN & InGaN Wenqing Fang1,2, Changda Zheng1,, Zhijue Quan1, Jianli Zhang1, Xiaolan Wang1, Xiaoming Wu1, Sheng Cao1, Chunlan Mo1 and Fengyi Jiang1 1The National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, China WeLP240 Effects of SiO2 Opening Array and Fill Factor on the Coalescence and Morphology of GaN Nanopyramid during Selective Area Growth by Metal Organic Chemical Vapor Deposition Yonghui Zhang1, Wengang Bi1, Zihui Zhang1, Tongbo Wei2, Zhuo Xiong2, Jinmin Li2, and Junxi Wang2 1Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China 2Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China WeLP242 Anomaly Behavior of Indium Incorporation in InGaN by Metal Modulation Growth Technique Apurba Chakraborty1 , Partha Mukhopadhyay1, Saptarsi Ghosh1, Ankush Bag1, Sanjay K Jana1, Syed Mukulika Dinara1, Mihir K. Mahata1, Rahul Kumar1, Subhasish Das1, Shubhankar Majumdar1, and Dhrubes Biswas1 1Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, India-721302. WeLP243 Enhanced Light Output from GaN-Based Light-Emitting Diodes with Ni/Au Electrodes Patterned by Multiple-Exposure Nanosphere-Lens Lithography Zhuo Xiong1, Yonghui Zhang1, Tongbo Wei1, Junxi Wang1 and Jinmin Li1 1Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, C Chinese Academy of Sciences, China WeLP244 Temperature Dependence of GaN MOS Capacitor Characteristics Zhibo Guo, Ke Tang and T. Paul Chow Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A. WeLP245 Comparison of Silicon, SiC and Gan Power Transistor Technologies with Breakdown Voltage Rating from 1.2 kV to 15 kV Sauvik Chowdhury, Zhibo Guo, Xueqing Liu and T. Paul Chow Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A. WeLP246 Gallium Nitride as a Hole Source for ZnO Light-Emitting Devices Chong-Xin Shan, and De-Zhen Shen 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China WeLP247 Integrated Manufacturing Process for Highly Efficient and Reliable High Power InGaN/GaN Light-emitting Diodes Shengjun Zhou1,3, Huai Zheng1, Hongpo Hu2, Qingyong Zhang2, Shufang Wang2, Yingce Liu2, Shu Yuan2, Sheng Liu1,* 1School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China 2Quantum Wafer Inc., Foshan 528251, China 3State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China WeLP248 High Quality and Smooth GaN Film Grow on GaN Bulk Substrate Using MOCVD Homoepitaxial Technique and Its Mechanism Analysis Nanliu Liu1,2, Yutian Cheng1, Jiejun Wu1*, Xingbin Li1, Tongjun Yu1*, Zhiwen Liang2,Yuzhen Tong1,2, Guoyi Zhang1,2 1Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China 2Sino Nitride Semiconductor CO., LTD, Dongguan 523500, P. R. China WeLP249 Fabrication of Large-Size and Extremely Thermal-Stable GaN Template on Mo Substrate Using Double Bondingand Step Annealing Process Qing Wang1, Zhiwen Liang2, Xuegang Dou2, Shaoqiong Mo2, Yang Liu1,*, Yongjian Sun3,**, Yuzhen Tong2, Guoyi Zhang2 1School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, PR China 2Sino Nitride Semiconductor Ltd., Dongguan 523500, PR China 3College of Engineering, Peking University, Beijing 100871, PR China WeLP250 High Quality GaN Growth nn the Wet Etching Pattern Sapphire Substrate With SiO2 Cap-Layer for a Special Growth Mode Ruihong Luo1,*2, Jiejun Wu1*, Nanliu Liu1,2, Zhiwen Liang2,Yuzhen Tong1,2, Guoyi Zhang1,2 1Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China 2Sino Nitride Semiconductor CO., LTD, Dongguan 523500, P. R. China WeLP251 Fabrication of High-Quality Semipolar GaN Templates: an Alternative to Free-Standing Substrates? F. Tendille1, M. Khoury1,2, L. Kappei1, P. de Mierry1, M. Nemoz1, M. Teisseire1, P. Vennéguès1, M. Leroux1, G. Feuillet2, and J. Zuniga-Perez1 1CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France 2CEA – LETI, MINATEC Campus, 17 Rue Des Martyrs, France September 3 Parallel Session A: Growth Session A1: GaN on Si Room: Convention Hall No. 2-I 8:30 –10:00 Chairs: Zetian Mi and Phillips Matthew ThGI1 (invited) 8:30 - 9:00 InGaN-Based Nanocolumn Emitter Technology Based on Uniform Arrays of Nanocolumns Katsumi Kishino1, 2, Shunsuke Ishizawa1, Tatsuya Kano1, Koji Yamano1, Hiroaki Hayashi1, Kai Motoyama1, Daishi Fukushima1 and Takao Oto1 1Sophia University, Japan 2Sophia Nanotechnology Research Center, Sophia University, Japan ThGO2 9:00 - 9:15 InGaN/GaN Nanowire Heterostructures Grown by Molecular Beam Epitaxy: A Route to Close the Green Gap Xin Zhang1,2,3, Hugo Lourenço-Martins4, Sophie Meuret4, Luiz Tizei4, Mathieu Kociak4, Pierre-Henri Jouneau5, Catherine Bougerol1,6, and Bruno Daudin1,2 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 3ALEDIA, 17 rue des martyrs, Bât. M23, 38054 Grenoble CEDEX 9, France 4Lab. de Physique des Solides, UMR 8502 Université Paris Sud bât 510, 91405 Orsay Cedex, France 5CEA, INAC, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France 6CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France ThGO3 9:15 - 9:30 Full-Color AlInGaN Core-Shell Nanowire Light Emitting Diodes on Si Renjie Wang, Xuedong Liu, Xianhe Liu, Ishiang Shih and Zetian Mi Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada ThGO4 9:30 - 9:45 Investigation of the Quantum Well Morphology within an InGaN/GaN Core-Shell Structure P. -M. Coulon1, S. Hosseini Vajargah2, C. Bryce3, E.D. Le Boulbar1, I. Gîrgel1, P.R. Edwards3, C. J. Humphreys2, R.W. Martin3, D.W.E. Allsopp1, and P.A. Shields1 1Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK 2Department of Materials Science and Metallurgy, University of Cambridge, CB3 0FS, UK 3Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK ThGO5 9:45 - 10:00 Polarity of Self-Assembled GaN Nanowires by Scanning Probe Microscopies A. Cros1, A. Minj1, N. Garro1, J. Colchero2, T. Auzelle3, and B. Daudin3 1Materials Science Institute, University of Valencia, P. O. Box 22085, E46071, Valencia, Spain. 2Facultad de Química, Dep. de Física, Universidad de Murcia, 30100 Murcia, Spain 3Equipe mixte CEA-CNRS “Nanophysique et Semiconducteurs”, SP2M, UMR-E CEA/UJFGrenoble 1, INAC, Grenoble, 38054, France Coffee Break 10: 00 - 10:20 September 3 Parallel Session B: Growth/ Basic Physics Session B10: AlGaN & InGaN Room: Meeting Room 201 8:30 –10:00 Chairs: TaeYeon Seong and Yuantao Zhang ThBI1 (invited) 8:30 - 9:00 Quantum Structure Engineering for High-Al-Content AlGaN Junyong Kang, Jinchai Li, Wei Lin, Duanjun Cai, Shuping Li, Na Gao, and Tongchang Zhen Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005, P. R. China ThBO2 9:00 - 9:15 Temperature Dependence of DC Characteristics in Graded AlGaN/GaN HFETs Y. L. Fang, Z. H. Feng, J. Y. Yin, G. D. Gu, X. B. Song, Y. J. Lv, X. Y. Zhou, S. B. Dun, S. J. Cai National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China ThBO3 9:15 - 9:30 Study of Epitaxial Growth Trend at Amec Prismo D-Blue MOCVD Platform Shiping Guo1, Zhaoying Chen1,2, Yao Chen1, Jason Hoo1, Quanyong Guo1, Yingbin Liu1, Ning Zhou1, Vincent Wang1, Xinqiang Wang2, and Zhiyou Du1 1Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China 2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China ThBO4 9:30 - 9:45 Comprehensive Studies of InGaN Thin Films over the Full Indium Composition Range Grown by Molecular Beam Epitaxy Zhe Chuan Feng1,2,*, Wei Zheng3, Xin Qiang Wang4, Lingyu Wan1, Hao-Hsiung Lin2, Ling-Yun Jang5, Ting-Shan Chan5, and Jin-Ming Chen5 1School of Physics Science & Technology, GXU-NAOC center for Astrophysics & Space Science, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, Nanning, Guangxi 530004, China 2Institute of Photonics & Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 106-17, Taiwan 3State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China 4State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871 China 5National Synchrotron Radiation Research Center, HSiNchu, 30076, Taiwan ThBO5 9:45 - 10:00 GaN Based Optoelectronic Materials and Devices D. G. Zhao1, D. S. Jiang1, J. J. Zhu1, P. Chen1, Z. S. Liu1 and H. Yang2 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China Coffee Break 10: 00 - 10:20 September 3 Parallel Session C: Optical Devices Session C10: Semipolar LEDs Room: Convention Hall No. 2-II 8:30 –10:00 Chairs: Erdan Gu and Detlef Hommel ThOI1 (invited) 8:30 - 9:00 Cavity Engineering: A New Paradigm for High Efficiency LEDs Euijoon Yoon Seoul National Univ, Korea ThOO2 9:00 - 9:15 Weak Phase-Space Filling Effect on the Modeling of the Low-Droop Semipolar InGaN LEDs Houqiang Fu, Zhijian Lu, Yuji Zhao School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, U.S.A ThOO3 9:15 - 9:30 Unexpected High Optical Polarization Ratio of High Angle Semipolar and Nonpolar InGaN Quantum Wells at Room Temperature Christian Mounir1, Ingrid L. Koslow2,3, Nikolay LEDentsov Jr.2, Tim Wernicke2, Markus Weyers3, Michael Kneissl2,3, Tilman Schimpke4, Martin Strassburg4 and Ulrich T. Schwarz1,4 1Department of Microsystems Engineering, IMTEK, Universität Freiburg, Germany 2Institute of Solid State Physics, Technische Universität Berlin, Germany 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany 4OSRAM Opto Semiconductors GmbH, Regensburg, Germany ThOO4 9:30 - 9:45 Optical Emission Characteristics and Valence Band Properties of (20-21) and (20-2-1) Semipolar InGaN Quantum Wells Ingrid L. Koslow1,3, Nikolay LEDentsov Jr.1, Tim Wernicke1, Christian Mounir2, Tore Niermann1, Michael Lehmann1, Ulrich T. Schwarz2, Markus Weyers3, and Michael Kneissl13 1Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany 2Department of Microsystems Engineering, IMTEK, University of Freiburg, Germany 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany ThOO5 9:45 - 10:00 Enhanced Polarisation of Semipolar (11-22) InGaN/GaN MQWs with a Two Dimensional Photonic Crystal Structure M. Athanasiou, R. Smith, Y. Hou and T. Wang* Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom Coffee Break 10: 00 - 10:20 September 3 Parallel Session D: Growth Session D10: Selective Area Growth Room: Convention Hall No. 2-III 8:30 –10:00 Chairs: Stacia Keller and As Donat J. ThEI1 (invited) 8:30 - 9:00 Frontiers of GaN Selective Area Growth Jung Han Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA ThEO2 9:00 - 9:15 Nano Selective Area Growth of GaN on the c-Face of 4H-SiC Using Epitaxial Graphene as a Mask: Towards Fully Integrated III-Nitride / Graphene / SiC Electronics and Optoelectronics. R. Puybaret 1,2, S. Sundaram 2, Y. El Gmili 2, M. Jordan 1,2, J. P. Salvestrini 4, P. L. Voss 1,2, W. de Heer 3, C. Berger 3 and A. Ougazzaden 1,2 1Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, USA. 2Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz, France 3Georgia Institute of Technology, School of Physics, Atlanta, GA, USA. 4Université de Lorraine, Supelec, LMOPS, EA4423, Metz, France ThEO3 9:15 - 9:30 Cavity Engineered Sapphire Substrate for Less Strained and More Efficient GaN Based LEDs Jeonghwan Jang1, Daeyoung Moon1, Hyo-Jeong Lee1, Donghyun Lee1, Daehan Choi1, Dukkyu Bae2,3, Hwankuk Yuh2, Youngboo Moon2, Yongjo Park1,2*and Euijoon Yoon1,2* 1Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea 2Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270, Korea 3Hexa Solution Co., Ltd., Suwon 443-270, Korea ThEO4 9:30 - 9:45 Nanoselective Area Growth of Dislocation-Free InGaN Nanopyramids on AlN/Si (111) Templates towards Solar Cell Applications S. Sundaram1, Y. El Gmili1, R. Puybaret1,2, X. Li1,2, K. Pantzas3, G. Patriarche3, P.L. Voss1,2, J.P. Salvestrini4 and A. Ougazzaden1,2 1CNRS, UMI 2958 Georgia Tech-CNRS, 2 Rue Marconi 57070 Metz, France 2School of Electrical and Computer Engineering, Georgia Institute of Technology, GT Lorraine, 57070, Metz, France 3CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis, France 4Universite de Lorraine, CentraleSupelec, LMOPS, EA 4423, 2 rue E. Belin 57070 Metz, France ThEO5 9:45 - 10:00 Growth and Characterization of Epitaxial Overgrown Less-Strained GaN by Monolayer Silica Microspheres Mask Ming Xiao, Jincheng Zhang, Jianjun Ma, Kun Tian, Rudai Quan and Yue Hao Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China Coffee Break 10: 00 - 10:20 September 3 Parallel Session A: Growth Session A11: Quantum Dots Room: Convention Hall No. 2-I 10:20 –11:50 Chairs: Robert Taylor and Mark Holmes ThGI6 (invited) 10:20 - 10:50 Simultaneous Structural and Optical Investigation of Individual GaN/AlN Quantum Dots Using Cathodoluminescence Directly Performed in a Scanning Transmission Electron Microscope Frank Bertram Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany ThGO7 10:50 - 11:05 Crystal-Phase Quantum Disks and Quantum Dots in GaN Nanowires Pierre Corfdir, Christian Hauswald, Johannes K. Zettler, Oliver Marquardt, Timur Flissikowski, Sergio Fernández-Garrido, Lutz Geelhaar, Holger T. Grahn, and Oliver Brandt Paul-Drude-Institut für Festkörpelektronik, Hausvogteiplatz 5−7, 10117 Berlin, Germany ThGO8 11:05 - 11:20 III-Nitride MQW- and QD-Based Nanotubes Christophe Durand1,3, Jean François Carlin4, Catherine Bougerol1,2, Bruno Gayral1,3, Joël Eymery1,3, Raphaël Butté4, Nicolas Grandjean4 1Univ. Grenoble Alpes, F-38000 Grenoble, France 2CNRS, Institut Néel, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 3CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France 4Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland ThGO9 11:20 - 11:35 Nanoscale Characterization of InGaN/GaN Core-Shell Microrods: Correlation of the Optical Properties and the Composition of the InGaN Single Quantum Well M. Müller1, S. Metzner1, T. Hempel1, P. Veit1, F. Bertram1, F. F. Krause2, T. Mehrtens2, K. Müller-Caspary2, A. Rosenauer2, T. Schimpke3, M. Strassburg3, and J. Christen1 1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany 2Institute of Solid State Physics, University of Bremen, Bremen, Germany 3OSRAM Opto Semiconductors GmbH, Regensburg, Germany ThGO10 11:35 - 11:50 Broad Emission Spectrum and Photonic Diode Behavior in Tapered GaN/InGaN Core-Shell Nanorod Suk-Min Ko, Sunghan Choi, Su-Hyun Gong, and Yong-Hoon Cho* Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea September 3 Parallel Session B: Late News Room: Meeting Room 201 10:20 –11:50 Chairs: Robert Martin and Shiping Guo ThBO6 10:20 - 10:35 Multicolor Electroluminescence from Dilute Nitride Based Intermediate Band Solar Cell Structures N. López1,2, B. J. Garcia2, K. M. Yu1,3, T. Tanaka1,4, and W. Walukiewicz1 1Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA 2Universidad Autónoma de Madrid, Departamento de física aplicada, km 15 Carretera de Colmenar, Madrid, Spain 3Department of Phyiscs and Materials Science, City University of Hong Kong, Kowloon, Hong Kong 4Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, JAPAN ThBO7 10:35 - 10:50 Hybrid MOCVD/MBE GaN Tunnel Junctions Benjamin P. Yonkee1, Erin C. Young1, John T. Leonard1, Sang Ho Oh2, Steven P. DenBaars1,2, Jim S. Speck1, Shuji Nakamura1,2 1Materials Department, University of California, Santa Barbara, CA 93106, USA 2Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA ThBO8 10:50 - 11:05 High Mobility AlGaN/GaN HEMT Channels Regrown on Etched GaN Surfaces for Device Applications Silvia H. Chan1, Stacia Keller2, Maher Tahhan2, Haoran Li2, and Umesh K. Mishra2 1Materials Department, University of California, Santa Barbara, USA 2Department of Electrical and Computer Engineering, University of California, Santa Barbara, USA ThBO9 11:05 - 11:20 2-Inch Highly Resistive GaN Substrates Obtained by Ammonothermal Method M. Zając1, R. Kucharski1, W. Korolczuk1, D. Grzybowska1, A. Puchalski1, J. Krupka2, J.L. Weyher3 1Ammono S.A., Prusa 2, 00-493 Warsaw, Poland 2Institute of Electronics and Microelectronics, Warsaw University of Technology, Koszykowa 75, 000662 Warsaw, Poland 3Insitute of High Pressure Physics, Polish Academy of Science, Sokołowska 29/37, 01-142 Warsaw, Poland ThBO10 11:20 - 11:35 Comparative Performance Assessment of SiC and GaN Power Rectifier Technologies Sauvik Chowdhury and T. Paul Chow Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A. ThBO11 11:35 - 11:50 Eradication of Trapping Effect in AlGaN/InGaN/GaN Heterostructure by Fermi Level Elevation Apurba Chakraborty1, Partha Mukhopadhyay1, Saptarsi Ghosh1, Syed Mukulika Dinara, Ankush Bag1, Rahul Kumar1, Mihir Kumar Mahata1, Subhashis Das1 and Dhrubes Biswas1 1Indian Institute of Technology, Kharagpur, India-721302 ThBO12 11:50 - 12:05 Electronic States of Wurzite Nitride Alloys Calculated by IQB Model Ayaka Kishi and Yuzo Shinozuka Faculty of Systems Engineering, Wakayama University, Japan September 3 Parallel Session C: Optical Devices Session C11: Nano LEDs Room: Convention Hall No. 2-II 10:20 –11:50 Chairs: Euijoon Yoon and RayHua Horng ThOI6 (invited) 10:20 - 10:50 Flexible Substrate-Independent Nanowire Devices for Light Emission and Detection Xing Dai1, Agnès Messanvi1,2, Hezhi Zhang1, Vladimir Neplokh1, Christophe Durand2, Joël Eymery2, François H. Julien1 and Maria Tchernycheva1 1Institut d’Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud XI, 91405 Orsay, France 2Equipe mixte “Nanophysique et semiconducteurs,” CEA/CNRS/Université Joseph Fourier, CEA, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France ThOO7 10:50 - 11:05 Spatially Confined Variations in Emission of InGaN/GaN Single Nanorods from Ultra-Dense Arrays Imaged by Hyperspectral Cathodoluminescence Gunnar Kusch1*, Michele Conroy2, Paul R. Edwards1, Vitaly Z. Zubialevich2, Peter J. Parbrook2, Robert W. Martin1 1Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow East, Glasgow G4 0NG, United Kingdom 2Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland ThOO8 11:05 - 11:20 Enhanced Optical Output Power of GaN-Based Flip-Chip Light-Emitting Diodes by Nanoporous GaN Layer Kwang Jae Lee1, Semi Oh1, Jaeyi Chun1, Jae-Joon Kim1, Janghwan Han1, Sung Hoon Jung2, Tae-Hoon Chung2, Jong Hyeob Baek2 and Seong-Ju Park1,* 1School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea 2Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea ThOO9 11:20 - 11:35 Increased Non-Radiative Energy Transfer Rate in Hybrid Organic/InGaN Nanorod White Light Emitting Structures by Surface Passivation R. M. Smith, M. Athanasiou, J. Bai, B. Liu and T. Wang Electronic and Electrical Engineering, the University of Sheffield, UK ThOO10 11:35 - 11:50 Strain Relaxation Effects in GaN/InGaN Microdisks Pivoted on Si Yiyun Zhang1, Jian-An Huang1, T. Wang2 and H. W. Choi1 1Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 2Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom September 3 Parallel Session D: Growth Session D11: AlN & Late News Room: Convention Hall No. 2-III 10:20 –11:50 Chairs: Yoichi Kawakami and Junxi Wang ThEO6 10:20 - 10:35 Deposition of H-BN and AlN Doped by Silicon: Insights from Interaction between Precursors R. B. dos Santos1,2, R. Rivelino1, F. de Brito Mota1, G. K. Gueorguiev2, and A. Kakanakova-Georgieva2 1Instituto de Física, Universidade Federal da Bahia, Brazil 2Department of Physics, Chemistry and Biology (IFM), Linköping University, Sweden ThEO7 10:35 - 10:50 Correlation of Sapphire Off-Cut and Reduction of Defect Density in MOVPE Grown AlN Arne Knauer1, Anna Mogilatenko1, Sylvia Hagedorn1, Ute Zeimer1, Johannes Enslin2, Tim Wernicke2, Markus Weyers1 and Michael Kneissl1,2 1Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12480 Berlin, Germany 2Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin, Germany ThEO8 10:50 - 11:05 Thick AlN Film Growth on Sapphire Substrate by HVPE Jicai Zhang1,2, Jun Huang2, Jianfeng Wang1,2, and Ke Xu1,2 1Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China 2Platform for Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou215123, China ThEO9 11:05 - 11:20 Strain Controls in AlN Layer by Ultra-Thin GaN Interlayer Grown on High-Quality AlN Template Coherently Grown on SiC (0001) by PAMBE Mitsuaki Kaneko, Tsunenobu Kimoto and Jun Suda Department of Electronic Science and Engineering, Kyoto University, Japan ThEO10 11:20 - 11:35 Preparation of Epi-Ready, Highly UV Transparent Bulk AlN Substrates for Epitaxy of Efficient UV-C Emitters C. Hartmann1*, J. Wollweber1, A. Dittmar1, T. Schulz1, U. Juda1, K. Irmscher1, A. Knauer2, J. Jeschke2, M. Weyers2, M. Albrecht1, M. Bickermann1 1Leibniz-Institute for Crystal Growth, Berlin, Germany ThEO11 11:35 - 11:50 Terahertz Magnetospectroscopy Studies of an AlGaN/GaN Heterostructure Ben F. Spencer1, Morgan T. Hibberd1, William F. Smith1, Darren M. Graham1, Matthias Beck2, A Albrecht Bartels2, Ivor Guiney3, Menno J. Kappers3, Rachel A. Oliver3, and Colin J. Humphreys3. 1School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, M Manchester M13 9PL, United Kingdom 2Laser Quantum GmbH, Max-Stromeyer-Str. 116, 78467 Konstanz, Germany 3Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom ThEO12 11:50 - 12:05 Record Mobility of Two-Dimensional Electron Gas in AlGaN/GaN HEMT Structures Determined by THz Cavity-Enhanced Optical Hall Effect Nerijus Armakavicius1, Jr-Tai Chen1, Tino Hofmann1,2, Sean Knight2, Philipp Kühne1, Daniel Nilsson1, Urban Forsberg1, Erik Janzén1, and Vanya Darakchieva1 1Semiconductor Materials, IFM, Linköping University, Sweden 2Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, U.S.A. September 4 Plenary Session Room: Convention Hall No. 3 8: 30 - 11:20 Chairs: Bernard Gil and Fernando Ponce PL-4 (plenary) 8: 30 - 9: 20 Growth of Bulk GaN Crystal by the Na Flux and OVPE Method Y. Mori, M. Imade, M. Maruyama, M. Yoshimura Osaka University, 2-1Yamadaoka, Suita, Osaka 565-0871, Japan PL-5 (plenary) 9: 20 - 10: 10 Current Trends in III-Nitride Photonics Nicolas Grandjean Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL) CH-1015 Lausanne, Switzerland Coffee Break 10: 10 - 10:30 PL-6 (plenary) 10: 30 - 11:20 Clearing the Hurdles for GaN Power Electronics Yifeng Wu Transphorm, USA September 4 Closing Remarks Room: Convention Hall No. 3 11:20 - 11:40 1