Current-Voltage Characteristics of Single InGaN/GaN Nanowire LEDs

Binh Huy Le, Shamsul Arafin, Nhung Hong Tran, Hieu Pham Trung Nguyen and Zetian Mi* Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 2A7, Canada

InGaN/GaN nanowire heterostructures have attracted considerable attention for applications in solid-state lighting. To date, however, there still lacks a detailed understanding of the surface states, defects and band-bending on the performance, including the electrical efficiency of such nanoscale LEDs.In this work, we have studied the current-voltage characteristics of single InGaN/GaN nanowires, wherein self-organized InGaN quantum dots are incorporated in the active region to achieve white-light emission. A significant enhancement of the current under forward bias is observed when the nanowire is illuminated under 405nm laser excitation, which is explained by leakage of photo-generated carriers from the dots and the reduction of the depletion region width of nanowires.

Catalyst-free, vertically aligned InGaN/GaN dot-in-a-wire heterostructures were first grown on Si(111) substrates by radio frequency plasma-assisted molecular beam epitaxy under nitrogen rich conditions. The active region contains 10 vertically coupled InGaN/GaN quantum dots. The In compositions of the dots are varied from ~ 15% to 50% to achieve white-light emission. The nanowire diameter is ~100 nm. The nanowires were dispersed on pre-patterned substrate, and single-nanowire devices were fabricated using e-beam lithography and contact metallization. Their current-voltage characteristics were measured at various temperatures. Under optical excitation, a significant enhancement of the current, up to a factor of ~150 for a forward bias of 8 V at 300 K was measured. The photocurrent enhancement becomes more pronounced with decreasing temperature. Detailed studies confirm that the current enhancement is not due to photovoltaic effect. Photo-generated carriers in the InGaN dots may escape from the dots and therefore lead to reduced depletion region width across the nanowire lateral dimension. Consequently, the current is significantly enhanced under forward biasing conditions. This study provides a unique approach for examining the carrier leakage process in nanowire devices and for probing the effect of surface electronic properties on the performance of nanowire LEDs. The optical performance of single-nanowire white LEDs is being investigated and will be reported.

ABSTRACT EXTENSION:

Figure 1. (a) Scanning electron microscopy image showing the morphology of the InGaN/GaN dot-in-a-wire heterostructures grown on a Si(111) substrate by molecular beam epitaxy. Inset: SEM image of a single InGaN/GaN dot-in-a-wire LED device with Ni/Au contact electrodes on both n- and p-GaN; Schematic illustration of the experimental setup used for measuring the photocurrent under forward biased condition. (b) Temperature dependent normalized photoluminescence spectra of single NW device with peak emission wavelengths of ~510 nm.

Figure 2. Dark and photocurrent of the single-nanowire based devices as a function of illumination density measured at 300 K. Inset: Semilog plot of enhancement factor Γ = Iph/Idark measured at 300 K, under 8 V bias and excitation power of 22 mW.

B: Optical Devices, University, Taipei, Taiwan. 5:00 PM B2.06 Factors Affecting the Directionality of InGaNjGaN Nanorod Visible LED Arrays S. Lis, S. E. O'Kane, C. J. Lewins, S. A. Fox, Y. D. Zhuang, J. Sarma and D. W. Allsopp; Electronic and Electrical * Invited paper Engineering, University of Bath, Bath, Avon, United Kingdom. 5:15 PM B2.07 SESSION Bl: Vis LEDs on Si Mode and Polarization Control in Gallium Nitride Nanowire Chair: Nathan Gardner l 2 l Monday Afternoon, August 26, 2013 Lasers Huiwen Xu , Jeremy B. Wright , Antonio Hurtado , 2 2 1 2 National Harbor 4-5 Ting-Shan Luk , Jeffrey J. Figie1 , Luke F. Lester , Igal Brener , 2 2 Qiming Li and George T. Wang ; lCenter for High Technology 1:30 PM *Bl,OI Materials, The University of New Mexico, Albuquerque, New High Performance InGaNjGaN based Blue LEDs Fabricated Hampshire; 2Sandia National Laboratories, Albuquerque, New from 8-inch Diameter Si(lll) Substrates YOllngjo Tak, Mexico. JUIl-Youn Kim, Joosnng Kim, Jaekyull Kim, Suhee Chae and Youngsoo Park; Compound Device Lab, Samsung Advanced Institute of Technology (SAlT), Yongin, Korea, Republic of. SESSION BPI: Poster Session: Optical Devices, Visible Monday Evening, August 26, 2013 2:00 PM *Bl,02 6:00 PM GaN on Silicon Substrates for Solid State Lighting: Strain Potomac C/D & 1-6 Compensation, Dislocation Mechansims and Device Results Martin Albrechtl , T. Markurt l , T. Schulzl , L. Lymperakis2, A. Duff2, BPl.Ol 2 3 3 Optical Characterization of Semipolar InGaN Single J. Ncngcballcr , P. Drcchsc1 and P. Stallss ; 1 ElcktroncIlrnikroskopic, Leibni:z;-Institut fner Kristalhuechtung, Berlin, Germany; Quantum Well Grown on GaN Micro-Pyramids Weijie Chen, 2Max-Planck-Institute fuer Iesenforschung, Dusseldorf, Germany; Guoheng Hu, Minggang Liu, Yibin Yang, Peng Xiang, Gangwei Hu, 30SRAM Opto Semiconductors, Regensburg, Germany. Yunqian Wang, Yuan Rcn, Yan Lin, Xiaobiao Han, Jianliang Jiang, Zhisheng Wu, Yang Liu and Baijun Zhang; State Key Laboratory of 2:30 PM Bl,03 Optoelectronic Materials and Technologies, School of Physics and Micro-Pixelated InGaNjGaN Light Emitting Diodes on Si Engineering, Sun Yat-sen University, Guangzhou, China. Substrates Pengfei Tianl , Jonathan J. McKendryl, Zheng Gongl , l 2 3 l BPl.02 Shuailong Zhang , Scott Watson , Dandan Zhu , Ian M. Watson , Optical Absorption of c-plane and Semipolar InGaNjGaN Erdan Gul , Anthony E. Kelly2, Colin J. Humphreys3 and Martin D. Quantum Wells Junjun Wangl , Benjamin Neuschl2 , Tobias Dawson!; 1 Institute of Photonics, University of Strathclydc, Glasgow, l 2 l United Kingdom; 2School of Engineering, University of Glasgow, Meisch , Klaus Thonke and Ferdinand Scholz ; 1 Institute of Glasgow, United Kingdom; 3Department of Materials Science and Optoelectronics, Ulm, Germany; 2Institute of Quantum Matter, Metallurgy, University of Cambridge, Cambridge, United Kingdom. Semiconductor Physics Group, Ulm, Germany.

2:45 PM Bl,04 BPl.03 Excellent Uniformity on Large Diameter GaN on Silicon LED GaN-Based LED Grown on ECO-GaN Template with an Wafer Andrea Pinos, Lars Groh, Atsushi Nishikawa, Ashay Chitnis, AlNjPatterned Si02 Sacrificial Layer for Chemical Lift-Off WeiSin Tan, Chengyu Hu, Saad Murad and Stephan Lutgen; Application Ray Hua HOrTIg, Hsu-Hung Hsueh, Sin-Liang au and Technology Dcpartrncnt, AZZURRO Scrniconductors AG, Dresden, Dong-Sing Wuu; National Chung Hsing University, Taichung, Taiwan. Gcrrnany. BPl.04 3:00 PM BREAK Growth, Structural, and Optical Properties of the Rare Earth (Yb3+ and Er3+) Doped Inl-xGaxN Thin films Kiran Dasari1, l 2 2 3 Maxime Guinel , J. Wang , W. M. Jadwisienomk , H. Huhtinen , A. 4 l SESSION B2: Nano LEDs and Lasers K. Pradhan and R. Palai ; lDepartment of Physics, University of Chair: C. C. Yang Puerto Rico, San Juan, Puerto Rico; 2School of EECS, Ohio Monday Afternoon, August 26, 2013 University, Athens, Ohio; 3Departrnent of Physics, University of National Harbor 4-5 Turku, Turku, Finland; 4Center for Materials Research, Norfolk State University, Norfolk" Virginia. 3:30 PM *B2.01 High-Performance Nanowire III-N LEDs Nathan F. Gardner, P. BPl.05 Svensson, S. Vi, O. Kryliouk, Y. Chang, L. Rornano, B. Herner, V. Carrier Competitions in Novel Sandwiched Structure InGaN Robbins, D. Thornpson, F. Patterson, R. Kaneshiro and L. Quantum Wells Ding Li, Juan He, Kamran Rajabil, Wei Yang, Samuelson; Glo USA, Inc., Sunnyvale, California. Wenyu Cao, Qingbin Ji and Xiaodong Hu; The Research Center for Wide-Gap Semiconductor, School of Physics, Peking University, 4:00 PM B2.02 Bcijing, China. High Efficiency Non-Radiative Energy Transfer in Novel White Light Emitting Hybrid OrganicjInorganic Structures BPl.06 Using InGaNjGaN Nanorod Arrays Rick M. Smith, Bin Liu, Jie Large-Scale Fabrication and Luminescence Properties of GaN Bai and Tao Wang; Electronic and Electrical Engineering, The Nanostructures by Soft Ultraviolet Nanoimprint Lithography l 1 2 University of Sheffield, Sheffield, South Yorkshire, United Kingdom. Technology Zhuang Zhe ,3, Zhang Guogang ,3, Guo Xu ,3, Liu Binl ,3, Zhang Rong1 ,3, Zhi Tingl ,3, Tao Taol ,3, Gc Haixiong2,3, Rcn 4:15 PM B2.03 Fangfang1 ,3, Xie Zilil ,3, Zhao Hong1 ,3, Chen Pengl ,3, Xiu l 1 l Electro-Optical Characterization of Single InGaNjGaN Xiangqian ,3, Han Ping ,3 and Zheng Youdou ,3; 1 Jiangsu Provincial Core-Shell LED Structures Johannes Ledig, Xue Wang, Jana Key Laboratory of Advanced Photonic and Electronic Materials, Hartrnann, Lorenzo Caccarno, Hergo-H. Wehrnann and Andreas Waag; School of Electronic Science and Engineering, Nanjing University, Institut fiir Halbleitertechnik, TU Braunschweig, Braunschweig, Nanjing 210093, P. R. China, Nanjing, Jiangsu Provincc, China; Germany. 2School of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China, Nanjing, Jiangsu Province, China; 4:30 PM B2.04 3Nanjing National Laboratory of Microstructures, Nanjing University, Fabrication and Characterization of Axial and Radial Nanjing 210093, P. R. China, Nanjing, Jiangsu Province, China. III-Nitride Nanowire LEDs George T. Wang, Qiming Li, Jonathan J. Wierer, Daniel D. Koleske and Jeffrey J. Figiel; Sandia National BPl.07 Laboratories, Albuquerque, New Mexico. Interplays of Point Defects, Extended Defects, and Localization on the External Quantum Efficiency Droop in l l 4:45 PM B2.05 InGaN Light-Emitting Diodes Ylle Lin ,2,., Yong Zhang , Regularly Patterned Core-Shell InGaNjGaN Quantum-Well Zhiqian~ Liu3 , Jihong Zhang4 , Liqing Sul , Tongbo Wei3 and Zhong 4 Nanorod Light-Emitting Diode Arrays Che-Hao Liao, Yu-Feng Chen ; Electrical and Computer Engineering Department, University Yao, Horng-Shyang Chen, Charng-Gan Tu, Chia-Ying Su, Wen-Ming of North Carolina at Charlotte, Charlotte, North Carolina; 2Fujian Chang, Hao-Tsllng Chen, Yean-Woei Kiang and Chih-Chung (C. C.) Institute of Research on the Structure of Matter, Chinese Acaderny of Yang; Institute of Photonics and Optoelectronics, National Taiwan Scicnces, Fuzhou, China; 3R &D Center for Scrniconductor Lighting,

1 Chinese Academy of Sciences, Beijing, China; 4Department of National Taiwan University, Taipei, Taiwan, Electronic Science and Fujian Engineering Research Center for Solid-Statc Lighting, Xialncn Univcrsity, Xiarncn, China. BPl.16 Comparison of Light Extraction Efficiency between the BPl.08 Vertical Light-Emitting Diodes with Surfaces of Periodic and Characteristics of Less Strained LED Grown on Sapphire Rough Structures Chun-Han Lin, Charng-Gan Tu, Horng-Shyang Substrate with Si02 Backside Deposition JongHak Kim', Chen, Chieh Hsieh, Chih-Yen Chen, Che-Hao Liao, Yean-Woei Kiang 2 2 2 4 and Chih-Chung (C. C.) Yang; Institute of Photonics and Seunghyun Moon , Kisu .100 , Yoon-Kyu Song , Youngboo Moon , Yongjo Park4 and Euijoon Yoonl ,3,4; lDcpartlncnt of Matcrials Optoelectronics, National Taiwan University, Taipei, Taiwan. Science and ~ngineering, Seoul National University, Seoul, Korea, Republic of; Department of Nano Science and Technology, Graduate BPl.17 School of Convergence Science and Technology, Seoul National Dependence of the Coupling Strength on the Distance Univcrsity, Suwon, Korca, Rcpublic of; 3W CU Hybrid Matcrials between Quantum Wells and Metal Nanostructures in Surface Prograrn, Dcpartrncnt of Matcrials Scicncc and Enginccring, Scoul Plasmon Coupled Light-Emitting Diodes Horng-Shyang Chen, National University, Seoul, Korea, Republic of; 4Energy Yang Kuo, Chia-Feng Chen, Wang-Hsien Chou, Ming-Hsen Chiou, Semiconductor Research Center, Advanced Institutes of Convergence Wen-Ming Chang, Pei-Ying Shih, Chih-Yen Chen, Chieh Hsieh, Technology, Seoul National University, Suwon, Korea, Republic of. Yean-Woei Kiang and Chih-Chung (C. C.) Yang; Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, BPl.09 Taiwan. Effect of Piezoelectric Field in (Al)GaN/InGaN Heterostructures on Efficiency of Direct Photoelectrolysis of BPl.18 Water Yu-Tong Chen,,2, .linn-Kong Sheu,,2, Yu-Hsiang Yeh,,2, Freestanding Guided-Mode Resonant GaN Gratings at 3 Visible Range Shumin He', Zheng Shi', Xin Li', Qinglong Yu', Ming-Lun Lee and Wei-Chih Lai,,2; 'Deapartment of Photonics & 2 Advanccd Optoelcctronic Tcchnology Ccntcr, National Chcng Kung Xumin Gao', Zhenhai Wang', Miao Zhang and Yongjin Wang'; INangjing University of Posts and Telecommunications. NanJ'ing University, Tainan, Taiwan; 2Research Center for Energy Technology . 2 ' , and Strategy & Center for Micro/Nano Science and Technology, ChIna; Statc Kcy Laboratory of Functional Matcrials for Inforrnatics, National Cheng Kung University, Tainan, Taiwan; 3Department of Shanghai Institute of Microsystem and Information Technology, Electro-Optical Engineering, Southern Taiwan University of Science Chinese Academy of Sciences, Shanghai, China, and Tcchnology, Tainan, Taiwan. BPl.19 BPl.I0 Fabrication of Two-Dimensional InGaN / GaN Photonic Performance Improvement of Gallium Nitride-Based Vertical Crystla Structures Using a Novel Lift-Off Technique Light Emitting Diodes Using Transparent and Conducting Modestos Athanasiou, Taeki Kim, Bin Liu, Richard Smith and Tao Carbon Nanotube Network Films Kycong Hcon Kirn, Su .lin Wang; University of Sheffield, Sheffield, United Kingdom. Kim, Jae Hoon Lee, Suk Won Kim, Byeong Ryong Lee, Kie Young BP1.20 Woo, Ho-Myoung An and Tae Geun Kim; Department of Electrical 88-Fold Enhancement in Internal Quantum Efficiency of Engineering, Korea University, Seoul, Korea, Republic of. InGaN/GaN Nanodisk Array Structure in the Green Spectral Region due to Nano-Cavity Effect Taeki Kim, Bin Liu, Rick M. BPl.ll Srnith, Modcstos Athanasiou, YiPin Gong and Tao Wang; Elcctronic Effects of an InGaN Prelayer on the Properties of and Electrical Engineering, The University of Sheffield, Sheffield, InGaN/GaN Quantum Well Structures M, .1, Davies', F, C, South Yorkshire, United Kingdom. Massabuau2 , P. Dawsonl , R. A. Olivcr2, M. J. Kappcrs2 and C. J. Humphreys2; lSchool of Physics and Astronomy, Photon Science BP1.21 Institute, University of Manchester, Manchester, United Kingdom; Correlation between Internal Quantum Efficiency and Degree 2Department of Materials Science and Metallurgy, University of of Localization in InGaN N anowires Hideaki M urotanil, Hiroya Cambridge, Cambridge, United Kingdom. 2 Andoh', Takehiko Tsukamoto', Toko Sugiura', Yoichi Yamada , 3 3 3 Takuya Tabata , Yoshio Honda , Masahito Yamaguchi and Hiroshi BPl.12 3 Arnan0 ; lToyota National Collcgc of Tcchnology, Toyota, Japan; GaN-Based Intermediate Band Solar Cells Realized via the 2Yamaguchi University, Ube, Japan; 3Nagoya University, Nagoya, Yellow-Emitting Impurity Level Jen-Hsiung Liao, Kun-Yu A. Lai, Japan. Lung-Chieh Cheng, Hsueh-Hsing Liu, .len-Inn Chyi and Hsiao-Wei Huang; Dcpartrncnt of Optics and Photonics, National Ccntral BP1.22 University, Chung-Li, Taiwan. Effects of Enhanced Lateral Transport on InGaN/GaN Light Emitting Diodes via n-type AlGaN/GaN Superlattices BPl.13 Hooyoung Song, Ki-Seong .leon, .lin Hyoun Joe, Seonock Kim, Enhanced Indium Incorporation and Emission Efficiency of InGaN/GaN Multiple Quantum Wells Grown on Porous GaN Minwoo Lee, Eun Ah Lee, Hwanjoon Choi, Junho Sung, Mingu Kang, 3 Templates Chew Beng Soh,,2, Ian Peiyuan Seetoh , Rayson .len Yoon-Ho Choi and Jcong Soo Lcc; Matcrials & Cornponcnts 2 2 Ngee Tan , kwadwo K, Ansah-Antwi ,., Chuan Beng Tay5, Agam P. Laboratory, LG electronics, Seoul, Korea, Republic of. 3 2 Vajpeyi and Soo .lin Chua ,3,4; 'Engineering and Applied Science, BP1.23 Singaporc Institutc of Tcchnology, Singaporc, Singaporc; 2Institutc of GaInN/GaN Multiple Quantum Well Solar Cells under Materials Research and Engineering, Singapore, Singapore; Concentrated Illumination and Elevated Temperature 3Singapore-MIT Alliance, National University of Singapore, Liang Zhao,,2, Wenting Hou,,2, Theeradetch Detchprohm,,2 and Singapore, Singapore; 4Department of Electrical and Computer Enginccring, National Univcrsity of Singaporc, Singaporc, Singaporc; Christian 'Yet:z;ell,2; lFuture Chips Constellation, Rensselaer, Troy, 5NUSNNI, National University of Singapore, Singapore, Singapore. New York; Department of Physics, Applied Physics, and Astronomy, Rensselaer, Troy, New York. BPl.14 Temperature-Dependent AC Current-Voltage-Capacitance BP1.24 Characteristics of GaN-Based Blue Light-Emitting Diodes at Characteristics of Blue Light Emitting Diode with Varing Forward Bias Wei Yang', Ding Li', Cunda Wang,,2 and Xiaodong Si-Doping on InGaN Layers below Quantum Wells Kyusang Kim', Dong-Pyo Han2 , Joo-Sun Yun2 , Il-Gyun Choi2, Hu'; 'School of Physics, Peking University, State Key Laboratory for 2 2 2 Artificial Microstructure and Mesoscopic Physics, Beijing, China; Min-Gu Kang , Hyun-Sung Kim , Chan-Hyoung Oh , Dong-Soo 3 2 2Department of Applied Physics, Tianjin University, Tianjin, China. Shin and .long-III Shirn ; lDcpt. of Applicd Physics and Elcctronics, Sangji Univcrsity, Wonju, Korca, Rcpublic of; 2Dcpt. of Elcctronics & BPl.15 Comm~nicat~on Engineering, Hanyang University, Ansan, Korea, Space- and Time-Resolved Spectroscopic Study of Repubhc of; Dept. of Applied Physics, Hanyang University, Ansan, InGaN/GaN Quantum Wells Coupled with the Localized Korea, Republic of. Surface Plasmons in Metal Nanoparticles Saulius Nargelas', 1 1 3 BP1.25 Darius Dobrovolskas , Juras Mickevicius , Mikas Vengris , Ramunas 2 1 4 Measurement of Low Temperature Current Spill-Over and Its Aleksiejunas , Gintautas Tamulaitis , Horng-Shyang Chen , Effects on the Efficiency Droop in InGaN/GaN Multiple Chia-Fcng Chcn4 , Chih-Ycn Chcn4 , Chc-Hao Liao4 and C. C. Yang4 ; Quantum Wells Tae-Soo Kim', Ki-Nam Park', Jin-Gyu Lee', lSemiconductors Physics Departament, Vilnius University, Vilnius, l 2 3 Lithuania; 2Institute of Applied Research, Vilnius University, Vilnius, Yong-Hyun Kiln , Soon-Ku Hong , Youngboo Moon and Jung-Hoon l .lKon~ju Lithuania; 3Department of Quantum Electronics, Vilnius University, Song ; National University, Gongju, Chungnam, Korea, Vilnius, Lithuania; 4Institutc of Photonics and Optoelcctronics, RepublIc of; Chungnam National University, Daejeon, Chungnam,

2 Korea, Republic of; 3THELEDS Ltd., Gwangju, Korea, Republic of. BP1.36 Enhanced Optical Output Power of InGaNjGaN Multiple BP1.26 Quantum Well Light-Emitting Diodes by Magnetic Field Investigation into Low-Temperature Photoluminescence Jae-Joon Kim, Young-Chul Leem, .lang-Won Kang and Seong-Ju Internal Quantum Efficiency and Defect-Recombination in Park; Gwangju Institute of Science and Technology, Gwangju, Korea, InGaN Light-Emitting Diodes Xiaoli Ji, Jun Ma, Xuecheng Wei, Republic of. Ruifei Duan, Junxi Wang, Xiaoyan Vi, Yiping Zeng, Guohong Wang, Fllhua Yang and Jinlnin Li; Institute of SClniconductors, Chinese BP1.37 Academy of Sciences, Beijing, China. Fabrication of Low-Temperature-Dependent Light-Emitting Diodes Using Eu and Mg Codoped GaN Hiroto Sekiguchi", BP1.27 1 1 2 Ryota Matsumura , Tatsuki Otani , Yasufumi Takagi , Hiroshi Numerical Simulation of InGaN-Based p-i-n Solar Cells Okada" and Akihiro Wakahara"; "Toyohashi University of Technology, Grown on Ga- and N-Polar GaN Dcr-Yuh Lin, Chcn-Chan Kao, Toyohashi, Japan; 2Harnarnatsu Photonics K. K., Harnarnatsu, Japan. Bo-Yuan Hu and Wei-Zhi Chen; Department of Electronics Engineering, National Changhua University of Education, Changhua, BP1.38 Taiwan. Emission Wavelength Dependence of Characteristic Temperature of InGaN Laser Diodes Agata Bojarska", Jakub BP1.28 l l l Goss , Lucja Marona , Anna Kafar , Shymon StanczykI, Irina Enhancement of Light Extraction Efficiency and Reduction of 2 2 1 1 Dislocation Density on GaN-Based Light-Emitting Diodes Makarowa , Grzegorz Targowski , Tadek Suski and Piotr Perlin ,2; Using Two-Direction Stripe-Patterned Sapphire Substrate "Institute of High Pressure Physics, Warsaw, Poland; 2 TopGaN 1 2 2 l Limited, Warsaw, Poland. Koji Okuno ,2, Takahidc Oshio , Naoki Shibata , Yoshio Honda , 1 1 Masahito Yarnaguchi and Hiroshi Arnano ; IDcpartrncnt of BP1.39 Electrical Engineering and Computer Science, Graduate School of Polarization-Induced Tunnel Junctions for the Design of Engineering, Nagoya University, C3-1, Chikusa-ku, Nagoya, Aichi, Light-Emitting Diodes with Reduced Droop Miao-Chan Tsai", Japan; 20ptoelectronics Business Unit, Toyoda Gosei Co., Ltd., 710, 2 3 4 Benjamin Leung , Lien Wei Chieh , Ta-Cheng Hsu and Yen-Kuang Origuchi, Shimomiyake, Heiwa, Inazawa, Aichi, Japan. 5 Ku0 ;I Institute of Photonics, National Changhua University of Education, Changhua, Taiwan; 2Departrnent of Electrical BP1.29 Engineering, Yale University, New Haven, Connecticut; 3R &D Center, The Effects of Mg Doping on Dislocation Core Structures in Epistar Co., Ltd., Chunan, Taiwan; 4 R &D Center, Epistar Co., Ltd., GaN Films Sneha Rhode", S. L. Sahonta", M. K. Horton2,M. .1. 1 3 2 Hsinchu, Taiwan; 5Department of Physics, National Changhua Kappcrs , C. J. HurIlphrcysl, R. O. Dusanc and M. A. Morarn ; University of Education, Changhua, Taiwan. "Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, United Kingdom; 2Department of Materials, BP1.40 Imperial College London, London, United Kingdom; 3Department of Improving Carrier Injection and Efficiency Droop in Metallurgical Engineering and Materials Science, Indian Institute of InGaNjGaN Light-Emitting Diodes with Step-Stage Technology I3ornbay, Murnbai, India. Multiple-Quantum-Well Structure and Hole Blocking Barriers Zhiyuan Zheng, Zirnin Chen, Yingda Chen, Hualong Wu, BP1.30 Shanjin Huang, Bingfeng Fan, Zhisheng Wu, Gang Wang and Separation of the Effects of Piezoelectric Fields from In Hao Jiang; School of Physics and Engineering, Sun Vat-sen Localization on the Emission Properties in InGaNjGaN Light University, Guangzhou, Guangdong, China. Emitting Diodes Studied by Temperature and Excitation Power Dependent Emission Spectroscopy Ki-Nam Park", BP1.41 Tae-Soo Kim", Jin-Gyu Lee", Hye-Jung Yu", Nan-Cho Oh", Atom Probe Tomography Analysis of a 1 2 Jung-Hoon Song and Young-Doo Moon ; lKongju National Gallium-Nitride-Based Commercial Light-Emitting Diode University, Gongju, Korea, Republic of; 2THELEDS Ltd., Gwangju, Ty .1. Prosa", D. Olson", A. D. Giddings", W. Lefebvre2, P. H. Korea, Republic of. Clifton" and D. .1. Larson"; "CAMECA Instruments, Inc., Madison, BP1.31 Wisconsin; 2Universite de Rouen, Saint Etienne du Rouvray, France. Thermal Resistivity of InGaN Laser Diodes and Arrays 1 1 2 BP1.42 S7,ymon Stanc7,yk , Anna Kafar , Gr7,egor7, Targowski , Pr7,emek 1 1 1 Monolithic III-Nitride Multi-Color Laser Arrays 2 2 Wisniewski ,2, Irina Makarowa , Tadeus7, Suski and Piotr Perlin ,2; Jeremy B. Wright",2.4, Sheng Liu"· , George T. WangI, Qiming Li", "Institute of High Pressure Physics, Warsaw, Poland; 2TopGaN Ltd., l l 2 Alexander Benh ,2, Daniel D. Koleske , Ping LUI, Huiwen Xu ,4, Warsaw, Poland. Luke Lester2,4, Ting S. Luk1 ,3, Igal Drener1 ,3 and Ganapathi S. 1 BP1.32 Subramania ,4; lSandia National Laboratories, Albuquerque, New Three Different Wavelengths by the Effect of Air-Gaps on Mexico; 2Center for High Technology Materials, The University of Stress Relaxation for Light-Emitting Diodes Young Jae Park, New Mexico, Albuquerque, New Mexico; 3Center for Integrated Nanotechnology, Sandia National Laboratories, Albuquerque, New Hyun Kyu Kim, Yashpal S. Katharria, Nam Han, Min Han, Kang Bok Mexico; 4Electrical and Cornputer Engineering, The University of Ko, Jong Han Yang, Young Taek Kirn and Chang-Hee Hong; Chonbuk New Mexico, Albuquerque, New Mexico. National University, Jeonju, Korea, Republic of. BP1.43 BP1.33 Growth Morphology and Emission Characteristics of Single Improved Performance of GaN-Based Light-Emitting Diodes InGaN Quantum Wells on Misoriented Nonpolar m-Plane Grown on Nano-Porous GaN Layer Kwang Jae Lee, Jae-Joon Bulk GaN Substrates Kathryn M. Kelchner", Leah Y. Kurit7,ky ", Kim, Sang-Jo Kim, Ho Yeon Kim and Seong-Ju Park; Gwangju 2 3 Institute of Science and Technology, Gwangju, Korea, Republic of. Kenji FuJit0 , Shuji Nakamura",3, Steven P. DenBaars"· and James S. Speck; "Materials Department, University of California, Santa BP1.34 Barbara, Santa Barbara, California; 20ptoelectronics Laboratory, Enhanced Optical Output Power of InGaNjGaN Vertical Mitsubishi Chernical Corporation, Ushiku, Ibaraki, Japan; Light-Emitting Diodes Using ZnO Nanorods on Surface with 3Department of Electrical and Computer Engineering, University of Varied Stoichiometry Young Chul Leem", Na-Yeong Kim", California, Santa Barbara, California. 2 2 Wan-Tae Yim , Sung-Tae Kim and Seong-Ju Park"; "School of BP1.44 Materials Science and Engineering, Gwangju Institute of Science and Coincident Cathodoluminescence and Electron Channelling Technology, Gwangju, Korea, Republic of; 2Sarnsung Electronics Co. Contrast Imaging of Threading Dislocations in GaN Ltd., Suwon, Korea, Republic of. Jochen Bruckbauer", G. Naresh-Kumar", Nouf Allehiani", Paul R. l l l 2 Edwards , Simon Kraeusel , Ben Hourahine , Stephen Lovelock , BP1.35 Menno J. Kappers2, Colin J. Hurnphreys2, Michelle A. Morarn2,3, Enhanced Performance of Vertical GaN-Based Light-Emitting 2 Rachel A. Oliver , Robert W. Martin" and Carol Trager-Cowan"; Diodes Using Electrical Forming Process in Wide-Bandgap "Department of Physics, SUPA, University of Strathclyde, Glasgow, Transparent Conductive Electrodes Su .lin Kim, Hee-Dong Kim, United Kingdom; 2Department of Materials Science and Metallurgy, Sang Young Park, Kyeong Heon Kim, Suk Won Kim, Byeong Ryong University of Cambridge, Cambridge, United Kingdom; 3Department Lee, Kie Young Woo, Ho-Myoung An and Tae Geun Kim; School of of Materials, Irnperial College London, London, United Kingdorn. Electrical Engineering, Korea University, Seoul, Korea, Republic of.

3 BP1.45 Technology, Haifa, Israel; 2Naval Research Laboratory, Washington, MOVPE of Columnar Ga-Polar GaN Core-Shell LEDs District of Columbia. 1 1 Xuc Wang!, Jana Hartrnaun , Johannes Lcdig , Matin S. 1 1 1 Mohajcrani , Hcrgo Wchrnann , Martin Mandl ,2, Martin 10:45 AM B4.02 2 3 3 4 Strassburg , Ian Griffiths , David Cherns , Uwe Jahn and Andreas Correlation between the Onset of High Injection and the Onset of Efficiency Droop in GaInN Light-Emitting Diodes Waag' ; I Institute of Semiconductor Technology, Braunschweig University of Technology, Braunschweig, Germany; 20sram Opto David S. Meyaard' , Guan-Bo Lin' , Jaehee Cho' , E. Fred Schubert I, 2 2 2 2 Semiconductors GmbH, Regensburg, Germany; 3School of Physics, H Hyunwook Shirn , Sang-Heon Han , Min-Ho Kim , Young Sun Kim 2 H Wills Physics Laboratory, University of Bristol, Bristol, United and Cheolsoo Sone ; I Rensselaer Polytechnic Institute, Troy, New Kingdom; 4Paul-Drude-Institut fuer Festkoerperelektronik, Berlin, York; 2LED Business, Samsung Electronics, Yongin, Korea, Republic Germany. of.

BP1.46 11:00 AM B4.03 Characterisation of Semi-Polar (11-22) InGaNjGaN Role of p-InxGa1-xN Layer in Enhancing Hole Transport and Multi-Quantum Wells Grown on ELOG GaN Templates Distribution in InGaNjGaN Multiple Quantum Wells of 2 2 Danny SutherlandI, Fabrice Oehler , Tongtong Zhu , James Visible III-Nitride Light-Emitting Diodes Jcomoh Kim , Mi-Hcc l l l l ' 2 Ji , Md. M. Sattcr , Jac-Hyun Ryou ,2, P. D. Yodcr , Thceradctch Griffiths , Tom Badcock , Dmytro Kundys', Phil DawsonI, Menno 3 2 2' Detchprohm , Russell D. Dupuis , Reid Juday3, Alec Fischer and Kappers , Rachel Oliver and Colin Humphreys2; I School of Physics ' ' 3 and Astronorny, Photon Science Institute, University of Manchester, Fernando Ponce ; IElectrical and Computer Engineering, Georgia Manchester, United Kingdom; 2Department of Materials Science and Institute of Technology, Atlanta, Georgia; 2Department of Mechanical Metallurgy, University of Cambridge, Cambridge, United Kingdom. Engineering, University of Houston, Houston, Texas; 3Department of Physics, Arizona Statc Univcrsity, Telnpc, Arizona. BP1.47 High-Efficiency GaN-Based Light-Emitting Diodes Fabricated 11:15 AM B4.04 Distribution of Deep Level Defects in InGaNjGaN Light with Identical Ag Contact on Both n- and p-layers Munsik Oh' , l 1 l 2 Emitting Diodes and Their Dependence on Indium Alloying Seongjun Kim , Eunjin Jung , Hyunsoo Kim , Seongnam Lee and 3 Andrcw Arrnstrong, Mary H. Crawford and Daniel D. Kolcskc; Sandia Yunju Choi ; 'Chonbuk National University, Jeonju, Korea, Republic of; 2Korca Polytechnic University, Siheung, Korea, Republic of; National Labs, Albuquerque, New Mexico. 3Korea Basic Science Institute, Suncheon, Korea, Republic of. 11:30 AM B4.05 Determination of Small Current Internal Quantum Efficiency SESSION 133: High 13rightncss/Efficicncy Visible LEDs of Blue (AlInGa)N Light-Emitting Diodes from Purely Chair: Werner Goet7: Electrically Derived Parameters Michael Binder , Bastian ' 2 Tuesday Morning, August 27, 2013 Galler' , Michael Furitsch' , Juergen Off' , Hans-Joachim Wagner , National Harbor 4-5 Roland Zeisel' and Simeon Katz' ; 'OSRAM Opto Semiconductors GrnbH, Rcgensburg, Gerrnany; 2Fraunhofer-Institut flir Angcwandtc 8:30 AM *B3.01 Festkorperphysik, Freiburg, Germany. Status of GaNjSiC-based LEDs and their Application in Solid State Lighting Hua-Shuang Kong, Cree, Inc., Durham, North 11:45 AM B4.06 Atomistic Simulations of InGaNjGaN LEDs Including Carolina. Random Alloy Effects Marco Uliscs Lopcz Diaz' , Alessandro 2 3 4 9:00 AM B3.02 Pccchia , Matthias Auf dcr MaurI, Fabio Sacconi , Gabrielc Pcnazzi l High-Efficiency Yellow Light-Emitting Diodes Grown on and Aldo Di Carlo ; IElectronic Engineering, University of Rome Tor (0001) Sapphire Substrate Rei Hashimoto, Jongil Hwang, Shinji Vergata, Rome, Lazio, Italy; 2CNR-ISMN, Monterotondo, Rome, Saito and Shinya Nunoue; Corporate R&D Ccntcr, Toshiba Lahio, Italy; 3T iberlab Srl., Rome, Lahio, Italy; 4Bremen Center for Corporation, Kawasaki-si, Kanagawa-kcn, Japan. COlnputational Matcrials Scicncc, UnivcrsiUit Brelnen, Brclncn, Germany. 9:15 AM B3.03 Influence of Waveguide Geometry on Parameters of J-Shaped Violet and Blue-Violet InGaN Superluminescent Diodes SESSION B5: Visible LED Fabrication and Integration l l 2 Anna Kafar , S7:yrnon Stanc7:yk , Gr7:egor7: Targowski , Robert Chair: Tae-Yeon Seong 2 l Tuesday Afternoon, August 27, 2013 Czernecki , Przemek WisniewskiI, Mike Leszczynski ,2, Tadek SuskiI , and Piotr Perlin ,2; 'Institute of High Pressure Physics PAS, Warsaw, National Harbor 4-5 Poland; 2 TopGaN Ltd., Warsaw, Poland. 1:30 PM B5.01 9:30 AM B3.04 Fabrication of N-Polar InGaN LEDs by Pulsed Sputtering Eiji Kishikawa , Kohei Ueno2 , Shigeru Inoue , Jitsuo Ohta and Ray Tracing Simulations of Light Extraction for High ' , ' ' Efficiency LEDs Leah Kuritzky', Christopher Lalau Keraly', Hiroshi Fujioka ,3; 'ns, The University of Tokyo, Tokyo, Japan; , 2Department of Appl. Chern., The University of Tokyo, Tokyo, Japan; Martin Cochet' , James Speck' and Claude Weisbuch ,2; I Materials, Univcrsity of California, Santa Barbara, Santa Barbara, California; 3JST-CREST, Tokyo, Japan. 2Laboratoire de Physique de la Matiere Condensee, CNRS-Ecole Polytechnique, Palaiseau, France. 1:45 PM B5.02 Flexible, Compliant GaN Nanomembranes for Photonic 9:45 AM B3.05 Applications Danti Chen, Jie Song, Ge Yuan, Kanglin Xiong and In Incorporation of InGaN Based LEDs on GaN Substrates .lung Han; Electrical Engineering, Yale University, New Haven, l Connccticut. with Various Planes Rika Shimma , Yaxin WangI, Tornohiro l l l 2 Yamarnoto , Hideki Hayashi , Ken-ichi Shiohama , Kaori Kurihara , 3 2:00 PM B5.03 Ryuichi Hasegawa and Kazuhiro Ohkawa' ; 'Dept. of Applied Monolithic Cool White Light Emitting Diodes Based on AlN Physics, Tokyo University of Science, Tokyo, Japan; 2Mitsubishi l l Islands Manish Mathcw , Hassanct Sodabanlu , Masakazu Chemical Corporation, Ibaraki, Japan; 3Mitsubishi Chemical Group, Sugiyama2 ,3 and Yoshiaki Nakano l ,2; IResearch Center for Advanced Scicncc and Technology Research Ccntcr, Yokohalna, Japan. Science and Technology, The University of Tokyo, Tokyo, Japan; 2Department of Electrical Engineering & Information Systems, The 10:00 AM BREAK University of Tokyo, Tokyo, Japan; 3Institute of Enginccring Innovation, Thc Univcrsity of Tokyo, Tokyo, Japan.

SESSION B4: Visible LED Physics and 2:15 PM B5.04 Characterization An Low-Cost Method for Parallel Multiple-Wafer Liftoff of Chair: Martin Albrecht Patterned Sapphire Substrates with Photoelectrochemical Tuesday Morning, August 27, 2013 Process Chieh Hsieh, Zhan Hui Liu, Chun-Han Lin, Chih-Yen Chen, National Harbor 4-5 Horng-Shyang Chen, Che-Hao Liao and Chih-Chung (C. C.) Yang; Institute of Photonics and Optoelectronics, National Taiwan 10:30 AM B4.01 University, Taipei, Taiwan. Suppression of Auger-Stimulated Efficiency Droop in Nitride-Based Light Emitting Diodes Roman Vaxcnburg' , Efrat 2:30 PM B5.05 l 2 Lifshitz and Alcxander L. Efros ; I Tcchnion - Israel Institutc of A Dual-Character GaNjInGaN Multiple Quantum Well

4 Device for Electroluminescence and Photovoltaic Absorption SESSION 137: Visible Nanostructures of Near-Mutually Exclusive Wavelengths .Han Wei HO,,2.3, Chair: Axel Hoffman 3 4 Surani-bin Dolrnanan , Qixun Wee ,3, Chuan Beng Tay5, Andrew A. Tuesday Afternoon, August 27, 2013 2 4 O. T ay6 and Soo-Jin Chua • ,?; 'NUS Graduate School for Integrative Chesapeake 1-3 Sciences and Engineering, National University of Singapore, Singapore, Singapore; 2Department of Electrical and Computer 3:30 PM B7.01 Engineering, National University of Singapore, Singapore, Singapore; Monolithic Integration of Different Emission Colors in 3 A *STAR Institute of Materials Research and Engineering, Singapore, Two-Dimensionally Arranged InGaN-Based Nanocolumn Singapore; 4Singapore-MIT Alliance, National University of Array Units of Micrometer Length-Scale Areas l 1 Singapore, Singapore, Singapore; 5Nanoscience & Nanotech Initiative, Atsushi Takahashi , Shunsuke Ishizawa1 and Katsumi Kishino ,2; National University of Singapore, Singapore, Singapore; 6Department IDepartment of Engineering and Applied Science, Sophia University, of Mechanical Engineering, National University of Singapore, Tokyo, Japan; 2Nanotechnology Research Center, Sophia University, Singapore, Singapore; 7Singapore-MIT Alliance for Research and Tokyo, Japan. Technology Centre, Singapore, Singapore. 3:45 PM B7.02 2:45 PM B5.06 GaN Nanotubes with Coaxial GaInN Quantum Wells 1 2 GaN Thin Film Lift-Off by Selective Lateral Electrochemical Dominik Heinz , Mohamed Fikryl, Timo Aschenbrenner ,3, Marco Etching of a InGaN/AIGaN Superlattice Layer Heonsu Jeon,,2, 4 4 5 5 2 3 Schowalter , Andreas Rosenauer , Manfred Madel , Ingo Tischer , Hojun Chang', Hyungrae Cha and Seong-Ran Jeon ; 'Department 2 5 1 Detlef Hornrnel , Klaus Thonke and Ferdinand Scholz ; 1 Institute of of Physics and Astronomy, Seoul National University, Seoul, Korea, Optoelectronics, Ulm University, Ulm, Germany; 2Institute of Solid Republic of; 2DcpartrIlcnt of Biophysics and Chernical I3iology State Physics / Semiconductor Epitaxy, University of Bremen, (WCU), Seoul National University, Seoul, Korea, Republic of; 3Korea Bremen, Germany; 3Karlsruhe Institute of Technology (KIT), Photonics Technology Institute, Gwangju, Korea, Republic of. Karlsruhe, Germany; 4Institute of Solid State Physics ~ Electron MIcroscopy, UnIversIty of I3rernen, I3rernen, Gerrnany; InstItute of 3:00 PM BREAK Quantum Matter / Semiconductor Physics Group, Ulm University, Ulm, Germany. SESSION 136: Solar Cells 4:00 PM B7.03 Chair: .James Speck Nanoscale Correlation of Structural, Electrical, and Optical Tuesday Afternoon, August 27, 2013 Properties in GaN and InGaN Nanorods Xiang Zhou', National Harbor 4-5 Ming-Yen Lu2, Yu-Jung Lu3 , Shangjr Gwo3 and Silvija Gradecak'; 3:30 PM *B6.01 'Department of Materials Science and Engineering, MIT, Cambridge, Realization of the High Conversion Efficiency Solar Cells Massachusetts; 2Graduate Institue of Opto-mechatronics Engineering, using Nitride Semiconductors Motoaki Iwaya', Yasushi Chia-Vi, Taiwan; 3Departrnent of Physics, National Tsing Hua Kurokawa1 Yosuke Katsu1 Taiji Yamamoto1 Tetsuya Takeuchi1 University, Hsinchu, Taiwan. Satoshi Ka~iyamal, Isamu'Aka·saki1 ,2 and Hi~oshi Amano2,3; , IFaculty of Science and Technology, Meijo University, Nagoya, Japan; 4:15 PM B7.04 2Akasaki Research Center, Nagoya University, Nagoya, Japan; Photonic Crystal Effects in Regular Arrays of Core Shell and 3Gradllate School of Engineering, Nagoya University, Nagoya, Japan. Quantum Disc InGaN/GaN Nanorods Christopher J. Lewins' , 1 2 1 Ernrnanllel D. Le I3011lbar , Paul R. Edwards , Szyrnon M. Lis , Wang 4:00 PM B6.02 N. Wan ', Robert W. Martin2 , Philip A. Shields' and Duncan W. Advances in Nitride Growth Technology for InGaN-Based Allsopp;r lElectrical & Electronic Engineering, University of Bath, 1 Solar Cells Chloe A. Fabien1, I3rendan Gunning , Michael Moseleyl, Bath, United Kingdom; 2physics, University of Strathclyde, Glasgow, W. Alan Doolittle', Alec M. Fischer2 , Yong Wei2 and Fernando A. United Kingdom. Ponce2 ; 'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; 2Department of Physics, 4:30 PM B7.05 Arizona State University, Ternpe, Arizona. GaN Nanostructures and Nanowires with Exceptional Lengths and Great Optical and Crystallographic Properties 4:15 PM B6.03 Grown by Hydride Vapor Phase Epitaxy (HVPE) 1 1 1 Assessment of Factors Controlling Conversion Efficiency of Yarnina Andre ,2, Agnes Trassolldaine ,2, Geoffrey Avit ,2, Evelyne Single-Junction III-Nitride Solar Cells Sergey Y. Karpov and GiI1 ,2, Kaddour LekhaI1 ,2, Catherine Bougerol3 , Francois Reveret 1 ,2, 1 1 1 Kirill A. I3ulashevich; STR Group - Soft-Impact, Ltd., St.Petersburg, Joel Leymarie ,2, Christelle Varenne ,2, Guillaume Monier ,2 and Russian Federation. Dominique Castelluci1,2; 1 Clermont U niversite, U niversite Blaise Pascal, Institut Pascal, F-63000 Clermont-Ferrand. 2CNRS, UMR 4:30 PM B6.04 6602" Aubiere, France; 2CNRS UMR 6602, Aubiere, France; Multilevel Intermediate-Band Solar Cells Based on 3CEA-CNRS-UJF group iNanophysique et SemiconducteursL, Institut 1 1 1 III-Nitrides Liwen Sang ,2, Meiyong Liao , Qifeng Liang , Masaki Neel CNRS, 25 avenue des Martyrs" Grenoble, France. 1 1 1 1 Takeguchi , I3enjarnin Dierre , Takashi Sekiguchi , YaSllO Koide and 1 4:45 PM B7.06 Masatomo Sumiya . 1 National Institute for Materials Science Recombination Dynamics and Internal Quantum Efficiency of Tsukuba, Japan; 2J'ST-PRESTO, Japan Science and Technol~gy InGaN Nanowires Hideaki Murotani', Hiroya Andoh', Takehiko Agency, Tokyo, Japan. Tsukamoto', Toko Sugiura', Yoichi Yamada2, Takuya Tabata3 , 3 3 3 4:45 PM B6.05 Yoshio Honda , Masahito Yarnaguchi and Hiroshi Arnano ; IToyota Solar Hydrogen Generation Using p-(In,Ga)N Nanowire National College of Technology, Toyota, Japan; 2Yamaguchi Photocathodes Jumpei Kamimura', Peter Bogdanoff2 , Jonas University, Ube, Japan; 3Nagoya University, Nagoya, Japan. 1 1 1 Laehnemann , Christian Hauswald , Lutz Geelhaar , Sebastian 2 5:00 PM B7.07 Fiechter and Henning Riechert'; 'Paul-Drude-Institut, Berlin, Selective Area Growth of In(Ga)N/GaN Nanocolumns by Gerrnany; 2Helrnholtz-Zentrurn I3erlin, I3erlin, Gerrnany. Molecular Beam Epitaxy on Si(111): from Ultraviolet to Infrared Emission Steven Albert', Ana M. Bengoechea Encabo' , 5:00 PM B6.06 Zarko Gacevic', Miguel A. Sanchez-Garcia', Enrique Calleja' and Fabrication of Nitride/Si Hybrid Tandem Cell Structures Achirn Trarnpert2; lInstituto de Sisternas Optoelectronicos y with Low Environmental Burden by Surface Activated 1 1 2 Microtecnologia, Universidad Politecnica de Madrid, Madrid, Spain; Bonding Naoteru Shigekawa , Jianbo Liang , NoriYllki Watanabe 2Paul-Drude-Institut, Berlin, Germany. and Akio Yarnarnoto3 ; lOsaka City University, Osaka, Japan; 2NTT Photonics Labs., Nippon Telegrapha and Telephone Corporation, 5:15 PM B7.08 Atugi, Japan; 3University of Fukui, Fukui, Japan. Correlated Optical and Structural Characterization of Nanowire Array LEDs James R. Riley', Qiming Li2 , George 5:15 PM B6.07 2 Wang and Lincoln Lauhon1; 1 Materials Science and Engineering, Obtaining a High Open-Circuit Voltage in GaInN-Based 1 1 1 Northwestern University, Evanston, Illinois; 2Sandia National Solar Cells Kurokawa Hironori , Kondo Shinichiro , Mori Mikiko , Laboratories, Albuquerque, New Mexico. Iwaya Motoaki', Takeuchi Tetsuya', Kamiyama Satoshi', Akasaki Isamu1,2 and Amano Hiroshi2,3; 1Faculty of Science and Technology, Meijo University, Nagoya, Japan; 2Akasaki Research Center, Nagoya University, Nagoya, Japan; 3Graduate School of Engineering, Nagoya University, Nagoya, Japan.

5 SESSION BP2: Poster Session: Optical Devices, Visible Tuesday Evening, August 27, 2013 BP2.09 6:00 PM Fabrication of III-Nitride Nanorods Photovoltaics on Silicon Potomac C/D & 1-6 Grown by PA-MBE Ching-Wen Chang', Paritosh Wadekar', Hui-Chun Huang2 , Chen-Yu Lin', Yuan-Fn Hsu', Chen-Yu He' and l BP2.01 Li-Wei Tn ; lphysics, National Sun Vat-sen University, Kaohsiung, Temperature-Dependent Kelvin Probe Studies on GaN from Taiwan; 2Materials and Opto-Electronic Science, National Sun 80 to 600 K Joy McNamara, Alison Baski and Michael Reshchikov; Vat-sen University, Kaohsiung1 Taiwan. Physics, Virginia Commonwealth UniversitY1 Richmond, Virginia. BP2.10 BP2.02 Verification of Internal Field Presence in InGaN/GaN High-Power and High-Efficiency Blue Light-Emitting Diode Semipolar Quantum Wells by Means of Photoluminescence 1 with 4 W Output Power Achieved in a Single-Chip Package Studied under High Pressure Grzegorz Staszczak 1 Tadeusz 2 1 l 3 3 Tak Jeong', Hyung Jo Park', Jong Hyeob Baek', Jun-Seok Ha and Suski 1 Piotr Perlin ,2 1 Mitsuru Funato and Yoichi Kawakarui ; Han-Youl Ryu3 ; 'LED Device Research Center, Korea Photonics 'Institute of High Pressure Physics "UNIPRESS", PAS, Warsaw, Technology Institute, Gwangju, Korea, Republic of; 2 Dcpt. of Applied Poland; 2TopGaN, Warsaw, Poland; 3Department of Electronic Chemical Engineering, Chonnam National University, Gwangju, Science and Engineering, Kyoto University, Kyoto, Japan. Korea, Republic of; 3Dept. of Physics, Inha University, Incheon, Korea, Republic of. BP2.11 Defects in Polar, Semipolar and Nonpolar (In)GaN -A l 3 3 BP2.03 Cotnparison Lukas Schade ,2, Tim Wernicke , Jens Rass , Simon 3 2 1 4 Current-Voltage Characteristics of Single InGaN/GaN Ploch , Meena A. Karunakaran , Katarhyna Hole , Markus Weyers 1 3 l Nanowire LEDs Binh H. Le, Nhung H. Tran, Shamsul Aralin, Hieu Michael Kneiss1 ,4 and Ulrich T. Schwarz ,2; lOptoelectronic P. Nguyen and Zetian Mi; Electrical and Computer Engineering, Modules, Fraunhofer Institute for Applied Physics, Freiburg, McGill University, Montreal, Quebec, Canada. Germany; 2 Optoelectronics, IMTEK, University Freiburg, Freiburg, Germany; 3Institute of Solid State Physics, Technical University BP2.04 Berlin1 Berlin, Germany; 4Ferdinand-Braun-Insitut, Leibnih-Institut Enhanced Luminous Efficacy in Phosphor-Converted White flir Hochstfrequenztechnik, Derlin, Gerrnany. Vertical Light-Emitting Diodes Using Low Index Layer Hyung-Jo Park1 ,2, Jan BeaIn Park1 ,2, SCHUg HW3n Kirn1,3, Tak BP2.12 l 2 l l Improved Efficiency Droop in GaN-Based Light-Emitting Jeong , JUIl Seak Ha , Ja Yean Kiln , Sang Bern Lee and Jong 1 Diodes with Trapezoidal Quantum Barriers Kim Sang-Jo, Hyeob Baek ; lLED Research & Business Division, Korea Photonics Technology Institute, Gwangju, Korea, Republic of; 2Department of Sang-Jun Lee, Kwang Jae Lee and Seong-Ju Park; Departrnent of Advanced Chemical and Engineering, Chonnam National University, Nanobio Materials and Electronics, Gwangju Institute of Science and Gwangju, Korea, Republic of; 3School of Semiconductor and Chemical Technology, Gwangju, Korea, Republic of. Engineering, Chonbuk National University, Jconju, Korea, Republic of. BP2.13 Stable Balance of Emission Intensities from Two Active BP2.05 Regions in Nitride Semiconductor-Based Light Emitting High Efficiency Blue and Green LEDs Grown on Si with 5 I,m Diodes Kenjo Matsui', Koji Yamashita', Mitsuru Kaga', Takatoshi Thick GaN Buffer Xinbo ZOll, Wing Cheung Chong, Ka Ming Morital , Yuka Kuwanol , Tomoyuki Suzukil , Tetsuya Takeuchil , 1 1 1 Wong, Jun Ma and Kei May Lau; ECE, The Hong Kong University of Satoshi Kamiyama , Motoaki Iwaya and Isamu Akasaki ,2; IFaculty Science & Technology, Hong Kong, Hong Kong. of Science and Technology, Meijo University, Nagoya, Japan; 2Electrical Engineering and Computer Science, Akasaki Research BP2.06 Center, Nagoya University, Nagoya, Japan. High Performance of GaN LEDs with Ga-Doped ZnO Transparent Conductive Layers Prepared Using MOCVD BP2.14 2 3 Dong-Sing Wuu'·', Ray-Hua Horng • , Kun-Ching Shen', Chen-Yang InGaN/GaN Light Emitting Diodes with Graphene Directly Yin3 and Chiung-Yi Huang'; 'Department of Materials Science and Grown by Plasma Enhanced Chemical Vapor Deposition 3 3 Engineering, National Chung Hsing UniversitY1 Taichung1 Taiwan; Kisu Joo',2, Yong Seung Kim .', Sahng-Kyoon Jerng ,4, Jae Hong 3 3 4 2 5 2Graduate Institute of Precision Engineering1 National Chung Hsing Lee ,4, Seung-Hyun Chun . and Euijoon Yoon . ; 'Department of UniversitY1 Taichung1 Taiwan; 3Department of Photonics, National Nano Science and Technology, Graduate School of Convergence Cheng Kung University, Taiwan, Taiwan; 4Department of Materials Science and Technology, Seoul National University, Suwon, Korea, Science and Engineering, Da-Yeh University, Changhua, Taiwan. Republic of; 2Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, BP2.07 Suwon, Korea, Republic of; 3Graphene Research Institute, Sejong Improvement of Light Extraction Efficiency of InGaN/GaN University, Seoul, Korea, Republic of; 4Departrnent of Physics, Sejong Based LED by Using Plasma Damage-Free Sputtering University, Seoul, Korea, Republic of; 5Department of Materials Min .100 Park, Kwang Jeong Son and .loon Seop Kwak; Dept. of Sccience and Engineering, Seoul National University, Seoul, Korea, Printed Electronics Engineering, Sunchon National University, Republic of. Suncheon, Jeonnarn1 Korea1 Republic of. BP2.15 BP2.08 Transport and Emission Properties of Nb-Doped n++ -type Less Strained and More Efficient GaN Light-Emitting Diodes (001) Anatase-Ti02 / Mg-Doped p-type (0001) GaN with Embedded Silica Hollow Nanospheres JongHak Kim', Heteroepitaxial Structures Masahiro Yamagishil , Kouji Ha7.:u l , 2 3 4 5 l l l Heeje Woo , Kisu Joo , Sungwon Tae 1 Jinsub Park 1 Daeyoung Tomomi Ohtomo , Youichi Ishikawa , Kentaro Furusawa , Tokuyuki 4 1 4 G 2 Moon , Sung Hyun Park 1 Junghwan Jang 1 Vigil Cho , Jucheol Nakayama and Shigefusa F. Chichibu'; 'Tohoku Univ., Sendai, 6 Park', Hwankuk Yuh', Gun-Do Lee', In-Suk Choi , Yasushi Japan; 2Sumitomo Metal Mining Co. Ltd., Tokyo, Japan. 2 8 Nanishi',7, Heung Nam Han', Kookheon Char • and Euijoon Yoon1,4,9; 1Department of Materials Science and Engineering, Seoul BP2.16 National U niversitY1 Seou11 Korea1 Republic of; 2School of Chernical Structural and Chemical Characterization of the InGaN/GaN and Biological Engineering1 Seoul National University, Seoul, Korea, Multi-Quantum Wells Using HR-XRD Pattern, XPS and Republic of; 3Nano Science and Technology Program, Graduate School AES Spectroscopy Ewa Grzanka,,2, Marcin Pisarek3 , Wojciech Convergence Science and Technology, Seoul National University, Lisowski3 , Robert C7.:erneckil ,2, Michal Les:z;c:z;ynskil ,2, Piotr Seoul, Korea, Republic of; 'WCU Hybrid Materials Program, Perlin' ,2, Andf7,ej Jablonski3 and TadeuS' Suski'; 'Institute of High Departrnent of Materials Science and Engineering, Seoul National Pressure Physics PAS, Warsaw, Poland; 2Institute of Physical UniversitY1 Seoul, Korea1 Republic of; 5Department of Electronic Chemistry PAS, Warsaw, Poland; 3TopGaN, Warsaw, Poland. Engineering, Hanyang University, Seoul, Korea, Republic of; 6High Temperature Energy Materials Research Center, Korea Institute of BP2.17 Science and Technology, Seoul, Korea, Republic of; 7Department of Numerical Study of Polarization Dependent Quantum Photonics, Ritsurneikan UniversitY1 Kusatsu, Shiga1 Japan; 8 T he Efficiency of Ag/Si02 Core-Shell-Nanoparticle Coated National Creative Research Center for Intelligent Hybrids and The InGaN/GaN Light Emitting Diodes Seul-Kee Moon and Jin-Kyu WCU Program of Chemical Convergence for Energy & Environment, Yang; Kongju National University, Kongju-si, Chungchungnarn-do, Seoul National University, Seoul, Korea, Republic of; 9Energy Korea, Republic of. Serniconductor Research Center1 Advanced Institutes of ConvergerlCe TechnologY1 Seoul National University, Suwon, Korea, Republic of.

6 BP2.18 MOVPE Growth and Characterization of Position-Controlled BP2.27 InGaN j GaN Core-Shell Nano- and Microrods AlN Buffer Layer Optimization for the MOVPE Growth of 1 1 l 2 Martin Mandl ,2, Tilman Schimpke , Michael Binder , Xue Wang , GaN Nanowire-Based LEDs on Silicon (111) Robert Koester, 2 3 3 4 Andreas Waag , Xiang Kong , Achim Trampert , Frank Bertram , Claudia Schmidt, Gregor Keller, Werner Prost and Franz-Josef 4 1 l Juergen Christen , Hans-Juergen Lugauer and Martin Strassburg ; Tegude; Solid-State Electronics Department - ZHO, University of lOSRAM Opto Scrnicondllctors GrnbH, Rcgcnsburg, Gcrrnany; Duisburg-Essen, Duisburg, Germany. 2Institute of Semiconductor Technology, Braunschweig University of Technology, Braunschweig, Germany; 3Paul-Drude-Institute for Solid BP2.28 State Electronics, Berlin, Germany; 4 0tto von Guericke University Improved Properties of (11-20) Nonpolar InGaNjGaN Light Magdeburg, Magdeburg, Germany. Emitting Diodes Using SiNx Interlayers and Hemispherically Patterned Sapphire Substrate Dachong Min, Gcunho Yoo, Jongjin BP2.19 Jang, Seunghwan Moon, Jeahwan Kim, Sooryong Chae and Okhyun Fabrication Characterization and Comparison of GaN Nam; Korea Polytechnic University, Siheung, Korea, Republic of. NanoLEDs by both Selective Area MOVPE Growth and 2 2 3 Etching Shunfcng Li1, Qianqian Jiao , Zhizhong Chcn , XllC Wang , BP2.29 3 3 3 Improved Uniformity for the Epitaxy of Laser Diodes on Socnkc Fncnding , Milcn3 Ercnburg , Jiandong Wci , Hcrgo-Hcinrich 2 3 3 1 , Wchrnann , Andreas Waag and Glloyi Zhang ,2; IPcking University, Pre-Patterned Substrates Lise Lahourcade , Marco Rossetti l ' Dongguan Institute of Optoelectronics, Dongguan, China; 2State Key Antonino Castiglia , Jean-Michel Lamyl, Denis MartinI, Marcus 2 2 Laboratory for Artificial Microstructures and Mesoscopic Physics, Duelk , Christian Velez and Nicolas Grandjean' ; 'SB ICMP LASPE, Peking University, Beijing, China; 3Institute of Semiconductor EPFL, Lausannc, Switzerland; 2EXALOS AG, Schlieren, Switzerland. Tcchnology, TU-Braunschweig, Braunschweig, Gcrrnany. BP2.30 BP2.20 Damage Morphology Study of GaN Structures by Electron Advances in ITO - Current Spreading Layers Bealll Induced Current Tomas Grinysl, Arunas Kadysl, Tadas l Silvia Schwyn Thoenyl, Hanspeter FriedliI, Marco Padrun , Antonino Malinauskasl , Mindaugas Sciuka2, Andrius Melninkaitis2 and Roland l Castiglia2 , Gatien Cosendey2 and Nicolas Grandjean2; IEvatec AG, TOlnasiunas ;I Institute of Applied Rcscarch, Vilnius Univcrsity, Flulns, Switzerland; 2L ASPE, ICMP, Ecole Polytcchnique Federale Vilnius, Lithuania; 2Laser Research Center, Vilnius University, de Lausanne (EPFL), Lausanne, Swit7,erland. Vilnius, Lithuania.

BP2.21 BP2.31 Simultaneous Mapping of the Cathodoluminescence and White Light Emission from InGaNjGaN LEDs and Nanorods Electron Beam Induced Current from InGaN LEDs with Using a Novel Organic Compound for Colour Conversion 1 2 Different Barrier Growth Temperatures Michael J. Wallace , Jochen Bruckbauer' , Neil J. Findlay2, Hugh A. McMullen , Anto R. 2 2 2 3 3 4 Paul R. Edwards , Fabrice Oehler , Menno J. Kappers , Margaret Inig0 , Paul R. Edwards' , .lie Bai , Tao Wang , Fabrice Oehler , 3 ' 3 2 4 4 Hopkins , Sivapathasundaram Sivaraya , Rachel A. Oliver , Colin .1. Mcnno J. Kappers , Colin J. HUlnphreys4, Rachel A. Olivcr , s 2 HUlnphreys2, Duncan W. Allsopp3 and Robert W. MartinI; lphysics, Margaret Hopkins , Duncan W. Allsopps, Peter J. Skabara and University of Strathclyde, Glasgow, United Kingdom; 2Materials Robert W. Martin'; 'Department of Physics, SUPA, University of Science and Metallurgy, University of Cambridge, Cambridge, United Strathclyde, Glasgow, United Kingdom; 2Department of Pure and Kingdom; 3Electronic and Electrical Engineering, University of Bath, Applied Chemistry, WestCHEM, University of Strathclyde, Glasgow, Bath, United Kingdom. United Kingdoln; 3 Departlncnt of Elcctronic and Elcctrical Engineering, University of Sheffield, Sheffield, United Kingdom; BP2.22 4Department of Materials Science and Metallurgy, University of Enhancement of External Quantum Efficiency of Cambridge, Cambridge, United Kingdom; SDepartment of Electronic InGaN-Based Light-Emitting Diodes Grown on Al203 and Si and Elcctrical Engincering, Univcrsity of Bath, Bath, United Kingdom. (111) with Co-Doped ZnO Film Yen-Hsiang Fang' , Rong Xllan' , Chia-Lung Tsail and Jung-Chun-Andrcw Huang2 ; IIndustrial BP2.32 Tcchnology Rcscarch Institutc/Electronics and Optoelectronics Nano-Scale Characterization of Extended Defects within GaN Research Laboratories, Hsinchu, Taiwan; 2Department of Physics, Nanocolulllns by Scanning Translllission Electron Microscopy National Cheng Kung University, Tainan 701, Taiwan, R. O. C., Cathodoluminescence Marcus Mueller', Gordon Schmidt , Peter Tainan, Taiwan. ' Veit l , Frank Bertraml , Juergen ChristenI, Arne Urban2, Joerg 2 2 BP2.23 Malindretos and Angela Rizzi ; 'Institute of Experimental Physics, Displacement Current in Current-Voltage Characteristics of Otto-von-Gucricke Univcrsitat Magdeburg, Magdcburg, Sachsen-Anhalt, Germany; 2IV. Physikalisches Institut, MetaljLow-Mg-Doped p-GaN Interfaces Kenji Shiojima' , 2 2 Georg-August-Universitat G6ttingen, G6ttingen, Niedersachsen, Toshichika Aoki' , Naoki Kaneda ,1 and Tomoyoshi Mishima ; Germany. 1 Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui, Fukui, Japan; 2Corporate Advanced BP2.33 Technology Group, Hitachi Cable Ltd., Tsuchiura, Ibaraki, Japan. Photoluminescence and Electroluminescence Improvement through Optimization of Multi Quantum Well Active Region BP2.24 Growth at High Pressure by MOCVD Ronald A. Arif, Erkan A. Spectrally Resolved Carrier Dynamics in Highly Excited LED Berkman, Dan Byrnes, Soo Min Lee and George D. Papasouliotis; Structures with Different Barrier Design Vccco Instrulncnts, SOlncrsct, Ncw Jersey. Ramunas Aleksiejunasl , Kristina Gehinytel , Ka7.imieras Nomeikal , Saulius Nargelasl , Mikas Vengrisl , Kestutis Jarasiunasl , Serdal BP2.34 2 2 2 2 Okur , Fan Zhang , Vitaliy Avrutin , Hadis Morkoc and Umit Dynamics of Carrier Redistribution Processes in InGaNjGaN Ozgur2; 'Institute of Applied Research, Vilnius University, Vilnius, Quantum Well Structures TOln Badcockl , Matthcw Davicsl , Phil Lithuania; 2Department of Electrical and Computer Engineering, Dawsonl , Menno Kappers2 , Rachel Oliver2 and Colin Humphreys2; Virginia COlnlnonwealth University, Richlnond, Virginia. 'physics & Astronomy, University of Manchester, Manchester, United Kingdom; 2Materials Science and Metallurgy, University of BP2.25 Calnbridgc, Calnbridgc, United Kingdoln. Cavity - Free Lasing in InGaN Heterostructures l l l Agata Bojarska , Alexandcr Khachapuridzc , Robert Czcrnccki ,2, BP2.35 Tadck SuskiI and Piotr Perlinl ,2; IInstitutc of High Pressurc Physics, Characterisation of Defects at Non-Polar GaNjInGaN Warsaw, Poland; 2TopGaN Limited, Warsaw, Poland. Junctions in Novel Materials for Application in Light Emitting Diodes Jack Scversl , Juan G. Lozanol , Stcwart Hoopcr2 BP2.26 and Peter D. Nellist' ; 'Oxford Materials, University of Oxford, Structure and Optical Properties of Staggered InGaN Oxford, United Kingdom; 2Sharp Laboratories of Europe, Oxford, Quantulll Wells Tobias Schulzl , Toni Markurtl , Thilo Relnlnelel , United Kingdom. Christian Nennstiel2 , Felix Nippert2 , Axel Hoffmann2 , Tadek Suski3 1 and Martin Albrecht ; 'Elektronenmikroskopie, Leibniz-Institut fuer BP2.36 Kristallzuechtung, Berlin, Germany; 2Institut fur Festkorperphysik, Embedding Nanopillar Arrays into InGaN Li~ht-Emitting 2 Tcchnischc Universitat Bcrlin, Bcrlin, Gcrrnany; 3Selniconductors, Diodes Kwai Hei Li' , Keyan Zang , Soo Jin Chua ,3 and Institute fir High Pressure Phyiscs, Polish Academy of Sciences, Hoi Wai Choi' ; 'Electrical and Electronic Engineering, The Warsaw, Poland. Univcrsity of Hong Kong, Hong Kong, Hong Kong; 2Institutc of

7 Material Research and Engineering, Singapore, Singapore; 3National SESSION B8: Next Generation Visible LEDs University of Singapore, Singapore, Singapore. Chair: Theeradetch Detchphrom Wednesday Morning, August 28, 2013 BP2.37 National Harbor 4-5 Influence of Quantum Well Number on the Bandwidth of High Speed Green Light-Emittinlf Diodes Pleun Maaskant'. 8:30 AM B8.01 Grzegorz Kozlowski', Haymen Shams, Mahbub Akhter', Brendan Modulation Characteristics of pnp AIGaN/InGaN/GaN 1 1 2 Roycroft , Silvino Presa , Menno Kappers , Colin Hurnphreys2 and Light-Emitting Transistors Ka7,uhide Kumakura, Hideki Brian Corbett'; 'Tyndall National Institute, University College Cork, Yamamoto and Toshiki Makimoto; NTT Basic Research Labs., Cork, Ireland; 2Materials Science and Metallurgy, University of Atsugi-shi, Kanagawa, .lapan. Cambridge, Cambridge, United Kingdom. 8:45 AM B8.02 BP2.38 Tunnel Injection of Holes in GaN Using GdN/GaN Growth Properties and Electrochemical Characterization of Heterojunction Sriram Krishnamoorthyl, Oscar Restrepo2, Rohan InGaN Photoanodes with Different In Concentrations Mishra3, .ling Yang2 , Roberto Myers2", Wolfgang Windl2 and 1 1 1 Matthias Finken ,3, Ada Wille ,3, Benjarnin Reuters ,3, Bernd Siddharth Rajan,,2; 'Electrical and Computer Engineering, The Ohio 2 Hollaender ,3, Michael Heuken,,4, Holger Kalisch,,3 and Andrei State University, Colurnbus, Ohio; 2Materials Science and Vescan',3; 'GaNBET, RWTH Aachen University, Aachen, Germany; Engineering, The Ohio State University, Columbus, Ohio; 3Materials 2PGI9-IT, Forschungszentrum .liilich GmbH, .liilich, Germany; Science and Technology Divison, Oak Ridge National Laboratory, Oak 3.lARA-Fundamentals of Future Information Technologies, .liilich, Ridge, Ohio. Gerrnany; 4AIXTRON SE, Herzogenrath, Gerrnany. 9:00 AM B8.03 BP2.39 10-f.'m-Square Micro LED Array with Tunnel Junction 1 1 1 The MOVPE Control of InGaN/GaN MQWs Covering on Masahiro Watanabe , Mitsuru Kaga , Koji Yamashita , Tomoyuki GaN Wires Grown on Si(111) Substrate Damicn Salomon,,2, 1 1 1 1 Suzuki , Daichi Minamikawa , Yuka Kuwano , Tetsuya Takeuchi , 2 1 2 1 1 1 Amelie Dussaigne , Christophe Durand , Pierre Ferret and Joel Satoshi Karniyarna , Motoaki Iwaya and Isarnu Akasaki ,2; IMeijo Eymery'; 'Equipe mixte CEA-CNRS-U.lF "Nanophysique et University, Nagoya, Japan; 2Akasaki Research Center, Nagoya semiconducteurs", SP2M, UMR-E CEA / U.lF-Grenoble 1, INAC, University, Nagoya, Japan. Grenoble, France; 2CEA - LETI, Grenoble, France. 9:15 AM B8.04 BP2.40 GaN Double-Doped with Mg and Eu: Beyond the Light 2 Tuning of Wavelength and Emitted Power from Violet Emitting Diode Limit Kevin O'Donnell', Vyacheslav Kachkanov , InGaN/GaN Laser Diode for Resonant Excitation of Solid 3 4 Katharina Lorenz and Michal Bockowski ; 'Strathclyde University, 1 1 State Converters Alexander Khachapuridze , Tadeusz Suski , Lucja Glasgow, United Kingdom; 2Diamond Light Source Ltd, Chilton, 1 1 3 Marona , Piotr Perlin ,2, Marek Berkowski and Witold United Kingdorn; 3Instituto Superior Tecnico, Carnpus Tecno16gico e Ryba-Romanowski4 . lInstitute of High Pressure Physics "Unipress" Nuclear" Sacavem, Portugal; 4Unipress, Warsaw, Poland. PAS, Warsaw, Pola~d; 2TopGaN Limited, Warsaw, 'Pola~d; 3Institut'e of Physics, PAS, Warsaw, Poland; 4Institute of Low Temperature and 9:30 AM B8.05 Structure Reasearch, PAS, Wroclaw, Poland. Flexible InGaN/GaN Quantum-Well Light-Emitting Diode Horng-Shyang Chen, Chun-Han Lin, Chih-Yen Chen, Chieh Hsieh, BP2.41 Wang-Hsicn Chou, Ycan-Woci Kiang and Chih-Chung (C. C.) Yang; Numerical Study on the Optimization of a GaN-Based Dual Institute of Photonics and Optoelectronics, National Taiwan Color Light-Emitting Diode with P-Type Insertion Layer for University, Taipei, Taiwan. 2 Balancing Two-Color Intensities Shu-Ting Yeh', Kai-Lun Chi , 2 1 Jin-Wei Shi and Yuh-Renn Wu ; lInstitute of Photonics and 9:45 AM B8.06 Optoelectronics and Department of Electrical Engineering, National Using an Inversion Layer for Achieving p-type GaN for LEDs Taiwan University, Taipei, Taiwan; 2Department of Electrical Grown by MOCVD on Planar N-polar GaN and Semi-Polar Engineering, National Central University, Taoyuan, Taiwan. Facets of Wet Etched N-polar GaN Dennis M. Van Den Broeck', Aadhithya M. Hosalli', Deon Bharrat2 , Salah Bedair' and Nadia BP2.42 El-Masry2; lElectrical Engineering, North Carolina State University, A Simple Method to Model Bragg Reflectors with Transient Raleigh, North Carolina; 2Materials Science and Engineering, North Layers Formed at the Interfaces Zarko Gacevic', Nenad Carolina State University, Raleigh, North Carolina. Vukmirovic2 and Enrique Calleja'; 'ISOM, Universidad Politecnica de Madrid, Madrid, Spain; 2Scientific Cornputing Laboratory, Institute 10:00 AM BREAK of Physics Belgrade, University of Belgrade, 11080 Belgrade, Serbia.

BP2.43 SESSION B9: Visible Lasers The Structure of Polar, Nonpolar, and Semipolar InGaN Chair: Mike Krarnes Quantum Wells Characterized by Atom Probe Tomography Wednesday Morning, August 28, 2013 2 2 .lames R. Riley', Theeradetch Detchprohm , Christian Wet7,el and National Harbor 4-5 1 Lincoln Lauhon ; IMaterials Science and Engineering, Northwestern University, Evanston, Illinois; 2Smart Lighting Research Center, 10:30 AM *B9.01 Future Chips Constellation, Department of Physics, Applied Physics, Recent Developments in Green and Blue Laser Diodes and Astronorny, Rensselaer Polytechnic Institute, Troy, New York. Adrian Avramescu, OSRAM Opto-Semiconductors GmbH, Regensburg, Germany. BP2.44 The Effects of Varying Threading Dislocation Density on the 11:00 AM B9.02 Optical Properties of InGaN/GaN Quantum Wells True Green InGaN-Based Semipolar Laser Diodes Using 1 1 2 2 M. J. Davies , P. Dawson , F. C. Massabuau , F. Oehler , R. A. Limited Area Epitaxy Matthew T. Hardy, Shuji Nakamura, .lames 2 2 Oliver , M. .l. Kappers , T. .l. Badcock' and C. .l. Humphreys2; S. Speck and Steven P. DenBaars; Materials, University of California, 'School of Physics and Astronomy, Photon Science Institute, Santa Barbara, Santa Barbara, California. University of Manchester, Manchester, United Kingdom; 2Department of Materials Science and Metallurgy, University of Carnbridge, 11:15 AM B9.03 Cambridge, United Kingdom. True-Blue Laser Diodes Grown by Plasma Assisted MBE on 1 Bulk GaN Substrates Grzegorz Muziol , Henryk Turski1, Marcin BP2.45 Siekacz1 ,2, Marta Sawicka1 ,2, Szyrnon Grzanka1 ,2, Piotr Perlin1 ,2, Growth Kinetics of N-polar GaN Columns by Selective Area Sylwester Porowski' and C7,eslaw Skierbis7,ewski,,2; 'Institute of High 1 1 1 MOVPE Xue Wang , Jana Hartrnann , Matin S. Mohajerani , Pressure Physics Polish Academy of Sciences Warsaw Poland' 1 1 2 Hergo Wehrnann , Martin Mandl ,2, Martin Strassburg , Eva Raj3, 2TopGaN Ltd, Warsaw, Poland.' ,,, 3 1 Zbigniew Lisik and Andreas Waag ; lInstitute of Semiconductor Technology, Braunschweig University of Technology, Braunschweig, 11:30 AM B9.04 Germany; 20sram Opto Semiconductors GmbH, Regensburg, Violet Vertical-Cavity Surface-Emitting Laser Structures Germany; 3Department of semiconductor and optoelectronics devices, Based on an AlInN/GaN Distributed Bragg Reflector Technical University of Loch, Lodz, Poland. Christoph Berger, .luergen Blaesing, Gordon Schmidt, Marcus Mueller, Peter Veit, Thornas Hernpcl, Frank Bertrarn, Arrnin Dadgar, Juergen Christen and Alois Krost; Institute of Experirnental Physics,

8 Otto-von-Guericke-Universitiit Magdeburg, Magdeburg, Resarch Lab, Lakehead University, Thunder Bay, Ontario, Canada. Sachsen-Anhalt, Germany. BP3.09 11:45 AM B9.05 The Potential of X-Ray Diffraction for Characterization of InGaN Laser Diodes with Very Thin AlGaN Cladding Layer Self-Assembled and Selective-Area Grown III-Nitride Grown on GaN Plasmonic Substrate Shymon Stanczykl , Tomasz Nanocolumns on Si(lll) Zarko Gacevic, Steven Albert, Ana 2 l 3 Bengoechea-Encabo, Miguel Angel Sanchez-Garcia and Enrique Czyszanowski , Anna Kafar , Robert Czernecki , Grzegof:ti 3 1 l 1 Targowski , Mike Leszc:tiynski ,3, Tadeusz Suski and Piotr Perlin ,3; Callcja; ISOM, Univcrsidad Politecnica dc Madrid, Madrid, Spain. lInstitutc of High Pressure Physics, Warsaw, Poland; 2Institutc of Physics, Lod7, University of Technology, Lod7" Poland; 3TopGaN Ltd., BP3.10 Warsaw, Foland. Investigation of InGaN Layers with Different In Concentration for Photo-Electrochemical Hydrogen l 12:00 PM B9.06 Generation Tadas Malinauskas , Arunas Kadysl, Edgaras l l Gallium Nitride Laser Diodes with Integrated Absorber: On .lelmakas , Tomas Grinysl, Mantas Dmukauskas , Benjaminas 2 2 2 1 Sebeka , Irena Savickaja , Jurga Juodka:tiyte and Saulius Juodka:tiis ; the Dynamics of Self-Pulsation Katar7,yna Hole' , Gerrit 1 l IVilnius Univcrsity, Vilnius, Lithuania; 2Ccntcr for Physical Scicnccs Luekens , Thomas Weigl, Klaus Koehler!, Joachim Wagner and and Tcchnology, Vilnius, Lithuania. Ulrich Schwarz' ,2; 'Fraunhofer IAF, Freiburg, Germany; 2IMTEK, Freiburg University, Freiburg, Germany. BP3.11 Nano-Layers of Nitride Semiconductors Grown by MEAGlow 12:15 PM B9.07 Epitaxial Technology and Their Nano-Dimensional Optical The Potential of III-Nitride Laser Diodes for Solid-State Properties Dimiter Alexandrovl ,2, Scott Butcher2,1, Penka Lighting Jonathan J. Wierer' , Jeffrey Y. Tsao' and Dmitry S. l l l l 2 Terziyska , Rositsa Gergova , Peter Binsted , Dimka Georgieva and Sizov ; lSandia National Laboratories, Albuquerque, New Mexico; Vasil Georgiev1 ,2; lElectrical Engineering, Lakehead University, 2Corning Incorporated, Corning, New York. Thundcr Bay, Ontario, Canada; 2Mcaglow Ltd., Thundcr Bay, Ontario, Canada. SESSION BP3: Poster Session: Optical Devices, Visible BP3.12 Wcdncsday Aftcrnoon, August 28, 2013 1:00 PM Statistical Analysis of InGaN Quantum Dots Tyler Hill' , Lci 1 2 2 Potomac C/D & 1-6 Zhang , Chu-hsiang Tcng , Brandon Dcrnory2, Pci-Chcng Ku and Hui Dcngl ; lphysics, Univcrsity of Michigan, Ann Arbor, Michigan; BP3.01 2Electrical Engineering and Computer Sciene, University of Michigan, Plasmonically-Enhanced Emission from an Inverted Ann Arbor, Michigan. III-Nitride Light Emitting Diode Michael Mastro, US Naval Research Lab, Washington, District of Columbia. BP3.13 Stark-Effect Versus Indium Fluctuations in Green-Light BP3.02 Emitting InGaN Quantum Wells Lucja Marona" Agata Strain Relief Mechanisms and Growth Behavior of Bojarskal , Gn';egor7: Stas7:c7.akl , Ewa Gr7.ankal , Robert C7.ernecki2 , Superlattice Distributed Bragg Reflectors Ada Wille' , Benjamin Tadeusz Suski and Piotr Perlin ; 'Institute of High Pressure Physics, 2 2 ' ' Reuters' , Matthias Finken' , Frank Heyroth , Georg Schmidt ,3, Warsaw, Poland; 2TopGaN, Warsaw, Poland. 1 1 l Michael Hcukcn ,4, Bolger Kalisch and Andrci Vcscan ; IGaN-BET, RWTH Aachen University, Aachen, Germany; 2Interdisciplinary BP3.14 Center for Materials Science, Martin-Luther-University Halle, Halle, InGaN/GaN Microcolumn LEDs with Sidewall Metal Contact Germany; 3Department of Physics, Martin-Luther-University Halle, Arrays Duk-jo Kong, Si-Young Bae, Chang-Mo Kang and Dong-Seon Halle, Germany; 4 AIXTRON SE, Herzogenrath, Germany. Lcc; School of InfoTnation and COTnrnunications, Gwangju Institutc of Scicncc and Tcchnology (GIST), Gwangju, Korca, Rcpublic of. BP3.03 Transparent Conductive Silver Nanowire Electrode in GaN , BP3.15 Based Light Emitting Diodes Pan-Ju Choi' , Yong-Jin Kang ,2, The Reliability of GaN Superluminescent Diodes and Laser l 2 l l l 1 Scung-.long Oh , .la-Ycon Kirn and Min-Ki Kwon ; IPhtonic Diodes Marco Rossctti , Marcus Duclk , Christian Velcz , Antonino Engineering, Chosun University, Gwangju, Korea, Republic of; 2Korea Castiglia2 Jean-Michel Lamy2 Lise Lahourcade2 Denis Martin2 and Photonics Technology Institute, Gwnagju, Korea, Republic of. 2 Nicolas G;andjean ; 'EXALOS AG, Schlieren, S~itzerland; 2EPFL, Lausanne, Swit:tierland. BP3.04 Optical Signature of Thermal Degradation of Indium-Rich BP3.16 InGaN Quantum Wells Nils A. Kaufmann, Lise Lahourcade, Georg Analysis of Light Extraction Efficiency for GaN-Based Rossbach, Denis Martin and Nicolas Grandjean; SB ICMP LASPE, Coaxial Microwall Light-Emitting Diodes Mohsen Nami, Ashwin EPFL, Lausanne, Switzerland. Rishinaramangalam and Daniel Fee:tiell; University of New Mexico, Albuqucrquc, Ncw Mcxico. BP3.05 Growth of GaN on Nano-Patterned Thermal Oxidized (111) BP3.17 and (100) Si Wenting Hou, Theeradetch Detchprohm, Xiaoli Wang Elemental Distribution of Coaxial InGaN/GaN Nanowires and Christian Wet:tiel; Physics, Rensselaer, Troy, New York. Grown by Metalorganic Chemical Vapor Deposition Elconora Scccol , Nuria Garrol , Andrcs Cantarcrol , Manh-Hung BP3.06 Chu2 , Jaime Segura-Rui7:2 , Gema Martine7.-Criado2, Bartos7. Impact of QD Shape and Coulomb Interaction on the 3 3 3 Foltynski , Hannes Behmenburg , Christoph Giesen and Michael Electronic and Optical Properties of a-plane GaN/AlN QDs 3 Heuken ; 'Institute of Materials Science (ICMUV), Valencia, Spain; Stefan Schulz , Miguel A. Caro ,2 and Eoin P. O'Reill ,,2; ' ' y 2Europcan Synchrotron Radiation Facility (ESRF), Grcnoblc, Francc; 'Photonics Theory Group, Tyndall National Institute, Cork, Ireland; 3AIXTRON SE, Her7,ogenrath, Germany. 2Department of Physics, University College Cork, Cork, Ireland. BP3.18 BP3.07 Design of Robust AlGaN/GaN Quantum-Well Localized Emission from the Apex of GaN/(In,Ga)N/GaN Heterostructures with Intersubband Transitions in the THz Pyramidal-Top Nanocolumns Grown in Ordered Arrays 2 Spectral Region Mark Beeler' , Catherine Bougerol , Edith Noemi Garcia-Lepetit, Zarko Gacevic, Steven Albert, Ana 3 3 Bellet-Amalric' , Katharina Lorenz , Eduardo Alves and Eva Bengoechea-Encabo, Miguel Angel Sanchez-Garcia and Enrique Monroy'; 1 Group N anophysique et Semiconducteurs, INAC-SP2M, Callcja; ISOM (Instituto dc Sistcmas Optoclcctronicos y CEA-CNRS, Grcnoblc, Francc; 2CEA-CNRS Group Nanophysiquc ct Microtecnologia), Madrid, Spain. Semiconducteurs, Institut Neel-CNRS, CEA-CNRS, Grenoble, France; 3Campus Tecnol6gico e Nuclear, Instituto Superior Tecnico, Sacavem, BP3.08 Portugal. A 2-D Hole Gas is Confirmed for Super-Luminescent n-Ino.30Gao.7oN/p-GaN Single Heteorstructures Grown by, the BP3.19 Migration Enhanced Afterglow Technique K. Scott Butcher ,2, Improvement of Luminescence Efficiency of N-face (000-1) Rositsa Gergova2 , Dimiter Alexandrov1 ,2, Vasil Georgiev 1 ,2, Dimka InGaN Multiple Quantum Wells Using InGaN Underlying Gcorgicva2 , Pcnka Tcrziyska2, Pctcr W. Binstcd2 and Grcg Togtcrna2; Layers Chia-Hung Lin, Tetsuya Akasaka and Hideki Yamamoto; NTT IMcaglow Ltd, Thundcr Bay, Ontario, Canada; 2Scrniconductor

9 Basic Research Laboratories, Atsugi, Kanagawa, Japan. Blocking Layer Kota Nakao, Haziq Muhhamad, Keisuke Yamane, Narihito Okada and Kazuyuki Tadatomo; Yamaguchi University, Ube, BP3.20 Japan. Optitnization of Surface Texture of Vertical Blue LEDs for Enhanced Light Extraction Efficiency Seonock Kim, Minwoo Lee, BP3.31 Eun Ah Lee, Hwanjoon Choi, Hooyoung Song, .lin Hyoun Joe, Junho Reducing Surface Recotnbination in InGaN Quantutn Sung, Ki-Seong .leon, Mingu Kang, Yoon-Ho Choi and Jeong Soo Lee; Dot-in-Wire Structures Chu-Hsiang Teng", Lei Zhang2 , Tyler Materials & Cornponents Laboratory, LG electronics, Seoul, Korea, Hill2 , Brandon Demory", Hui Deng2 and Pei-Cheng Ku"; "EECS, Republic of. University of Michigan, Ann Arbor, Michigan; 2p hysics, University of Michigan, Ann Arbor, Michigan. BP3.21 A Cotnparative Study of the Lasing Dynatnics frotn BP3.32 InGaNjGaN Microdisk Cavities with Etnbedded InGaN 2 Lutninescence in M-Plane GaN Grown on M-Plane Sapphire Quantutn Dots Alexander J. Woolfl, Timothy Puchtler , Tongtong by MOCVD Qing Paduano", David W. Weyburne" and David C. 2 2 2 Zhu , Menno J. Kappers , Rachel Oliver and Evelyn Hu"; I School of Look2,3; lAir Force Research Lab, Wright-Patterson AFB, Ohio; Engineering and Applied Sciences, Harvard University, Carnbridge, 2Semiconductor Research Center, Wright State University, Dayton, Massachusetts; 2Departrnent of Materials Science and Metallurgy, Ohio; 3Wyle Laboratories, Inc, Dayton, Ohio. University of Cambridge, Cambridge, United Kingdom. BP3.33 BP3.22 J unction Leakage Resistance of III-N Solar Cells Grown on Using Surface States of Galliutn Nitride Nanowires for GaN Substrates by MBE and MOVPE Kazuhide Kusakabe"·2, Solar-Driven Photocatalytic Water-Splitting and Hydrogen Fuel Generation Yuchen Yangl , Nicholas J .Borysl, Anil Ghimirel , Naoki Hashimoto" and Akihiko Yoshikawa",2,3; "Center for SMART 2 3 3 Green Innovation Research, VI3L, JST-ALCA: SMART Solar Cell PJ, Michael Bartl , P.James Schuck , Shaul Aloni and Jordan Gerton"; Chiba University, Chiba, Japan; 2G-COE, Chiba University, Chiba, "physics & Astronomy, University of Utah, Salt Lake City, Utah; Japan; 3Info. & Comm. Engineering, Kogakuin University, Tokyo, 2Chemistry, University of Utah, Salt Lake City, Utah; 3Molecular Japan. Foundry, Lawrence Berkeley National Laboratory, Berkeley, California. BP3.34 Prototyping of GaInN LEDs: The Suitable Laser Source for BP3.23 Mesa Definition Ruediger Moserl , Michael Kunzerl , Christian Quantitative Analysis of Carrier Escape and Recombination Gossler", Klaus Koehler", Wilfried Pletschen", .lens Brunne2 , Ulrich Efficiency in GaN-Based Blue Light-Etnitting Diodes l l T. Schwarz ,3 and Joachirn Wagner ; I Fraunhofer Institute for SeungHyuk Lim, YangSeok Yoo and YongHoon Cho; Department of Applied Solid State Physics IAF, Freiburg, Germany; 2Laboratory for Physics and Graduate School of Nanoscience & Technology (WCU), Microactuators, Institute of Microsystems Engineering (IMTEK), KAIST, Daejeon, Korea, Republic of. University of Freiburg, Freiburg, Germany; 3Laboratory for Optoelectronics, Institute of Microsystems Engineering (IMTEK), BP3.24 University of Freiburg, Freiburg, Gerrnany. Direct Epitaxial Growth of GaN-Based Light-Etnitting Diodes on Patterned Graphene Oxide: A Solution for Heat BP3.35 Dissipation Issues Nam Han, Chonbuk National University, Jeonju, Investigation of Electron Transport through Unipolar InGaN Korea, Republic of. Quantutn Well Structures David Browne", Yuh-Renn Wu2 and James S Speck"' "Materials UC Santa Barbara Santa Barbara BP3.25 California; 2Elec~rical Engin~ering, National Tai~an University, ' Systetnatic Aanalysis of Photocurrent Spectroscopy on Taipei, Taiwan. InGaNjGaN Blue Light-Etnitting Diodes Dong-Soo Shin", 2 2 Jong-Ik Lee and .long-In Shim ; I Applied Physics, Hanyang BP3.36 University, ERICA Campus, Ansan, Korea, Republic of; 2Electronics Rootn Tetnperature Resonant Energy Transfer between & Communicairon Eng., Hanyang University, ERICA Campus, Ansan, GaNj AlGaN Quantutn Wells and Polyfluorene Korea, Republic of. Rahul Jayaprakash",2, Fotis Kalaitzakis2, Joel Bleuse3 , Bruno Gayra13 , Eva Monroy3 and Nikos T. Pelekanosl,2; IMaterials Science BP3.26 and Technology, University of Crete, Heraklion, Greece; Thin Filtn Color-Tunable Micro-Pixelated RGB 2Microelectronics Research Group, IESL-FORTH, Heraklion, Greece; Light-Etnitting Diodes Zetao Ma, Yuk Fai Cheung and 3CEA-CNRS Group of Nanophysics and Semiconductors, Hoi Wai Choi; Electrical and Electronic Engineering, The University CEA/INAC/SP2M, Grenoble, France. of Hong Kong, Hong Kong, Hong Kong. BP3.37 BP3.27 Stitnulated Etnissions in GaN-Based Laser Diodes Far below Advantages of the Moth-Eye Patterned Sapphire Substrate theThreshold Ding Li", Wei Yang", Hua Zong", Liefeng Feng2, for the High Perfortnance Nitride Based LEDs 1 l l Toshiyuki Kondo , Tsukasa Kitano , Atsushi Suzuki I, Midori Mori , Cunda Wang",2, Guoyi Zhang" and Xiaodong Hu"; "The Research Center for Wide-Gap Semiconductor, School of Physics, Peking Koichi Naniwae" Motoaki Iwaya2 Tetsuya Takeuchi2 Satoshi 2 2 University, Beijing, China; 2Department of Applied Physics, Tianjin Kamiyama ,1 and Isamu Akasaki '; lEL-SEED Corpor'ation, Nagoya, University, Tianjin, China. Japan; 2Meijo University, Nagoya, Japan. BP3.38 BP3.28 The Origin of Light-Extraction Enhancetnent of GaN-Based Key Paratneters for the Optitnization of Yellow Etnitting LED Covered with ZnO Nanorods Hyun Jeong", Doo Jae Park", InGaN Multiple Quantutn Wells Grown by MOCVD 2 Kaddour Lekhal, Benjamin Damilano, Sakhawat Hussain, Philippe Yong Hwan Kim", Jae Su Yu and Mun Seok Jeong"; "Center for Vennegues and Philippe Dc Mierry; CRHEA/CNRS, Nice, France. Integrated Nanostructure Physics, Institute of Basic Science, Sungkyunkwan University, Suwon, Gyeong Gi-Do, Korea, Republic of; BP3.29 2Department of Electronics and Radio Engineering, Kyung Hee Analysis of Subtnicron GaN Based Core-Shell LED Structures University, Suwon, Gyeong Gi-Do, Korea, Republic of. Grown by Selective Area MOVPE .lana Hartmann", Xue Wang", BP3.39 Johannes Ledig", Matin Sadat Mohajerani", Martin Mandl2 , Carrier Dynatnics Analysis for Efficiency Droop in Stephanie Bley4, Kathrin Sebald4 , Xiang Kong3 , Achirn Trarnpert3 , 2 4 4 GaN-Based Light Etnitting Diodes Using Titne Resolved Martin Strassburg , Tobias Voss , Jiirgen Gutowski , Hergo-Heinrich l 1 l Electroluminescence System YangSeok Yoo , Isnaeni Isnaeni , WehmannI and Andreas Waag ; I Institute of Semiconductor 2 Technology, Technical University of Braunschweig, Braunschweig, .long Ho Na and Yong Hoon Cho"; "Department of Physics, Gerrnany; 20srarn Opto Serniconductors GrnbH, Regensburg, Graduate School of Nanoscience & Technology (WCU), KAIST Gerrnany; 3Paul-Drude-Institute for Solid State Electronics, Berlin, Center for LED Research, and KI for the NanoCentury, KAIST, Germany; 4University of Bremen, Institute of Solid State Physics, Daejeon, Korea, Republic of; 2 LED Devision, LED R&D Center, LG Bremen, Germany. Innotek, Paju, Korea, Republic of.

BP3.30 Itnprovetnent in Setnipolar {11-22} Light-Etnitting Diodes Using Cotnbination of InGaN Underlying Layer and Hole

10 2 3 3 SESSION BI0: IR Materials and Devices Giovanna Mura , Francesca Rossi , Giancarlo Salviati , Katarzyna 4 4 5 5 Chair: Eva Monroy Holc , Thomas Weig , Lukas Schade , Meena Anu Karunakara , 4 Wcdncsday Aftcrnoon, August 28, 2013 Ulrich T. Schwarz ,5 and Enrico Zanoni\ IDcpartlncnt of National Harbor 4-5 Information Engineering, University of Padova, Padova, Italy; 2University of Cagliari, Cagliari, Italy; 3IMEM-National Council of 2:45 PM *BlO.Ol Research, Parma, Italy, Parma, Italy; 4Fraunhofer Institute for III-Nitride Photonic Cavities Nicolas Grandjean, Institute of Applied Solid State Physics IAF" Freiburg, Germany; 5IMTEK, Condensed Matter Physics (ICMP), Ecole Polytechnique Federale de Frciburg Univcrsity, Frciburg, Gcrrnany. LausanIle (EPFL), LausanIle, Switzerland. 9:15 AM Bll.04 3:15 PM BlO.02 Microscopic Description of the Impact of Alloy Fluctuations Short Period Polar and Non-Polar InN/nGaN Superlattices on Electronic and Optical properties of c-plane InGaN/GaN babela Gorczyca', Tadek Suski', Grzegorz Staszczak', Xinqiang QWs Stefan Schulz', Miguel A. Caro,,2 and Eoin P. O'Rcilly,,2; 2 3 3 4 'Photonics Theory Group, Tyndall National Institute, Cork, Ireland; Wang , Niels Christensen , Axel Svane , Emmanouil Dimakis and 4 2Department of Physics, University College Cork, Cork, Ireland. Theodore Moustakas ; lInstitutc of High Pressure Physics, Warsaw, Poland; 2 State Key Laboratory of Artificial Microstructure and 9:30 AM Bll.05 Mesoscopic Physics, Beijing, China; 3Department of Physics and Revisiting the "In-clustering" Question in InGaN by Using Astronomy, University of Aarhus, Aarhus, Denmark; 4Boston Cs-STEM and Low-Loss EELS below the Knock-On University, Boston, Massachusetts. Threshold Kamal H. Baloch', Aaron .Johnston-Peck2 , Kim 2 2 3 3:30 PM BlO.03 Kisslingcr , Eric Stach and Silvija Gradccak ,l; lCcntcr for Structure-Properties Relationships in Nitride Intersubband Excitonics, MIT, Cambridge, Massachusetts; 2Center for Functional Materials for Infrared Optoelectronic Devices Oana Malis,,2, C. Nanomaterials, Brookhaven National Laboratory, Upton, New York; 3Materials Science and Engineering, Massachusetts Institute of Edrnuuds1 , D. Li1 ,2, L. T3ng1 ,2, J. 8hao1 ,2, G. Gardncr2 ,4, A. Gricr3 , Tcchnology, Calnbridgc, Massachusctts. Z. Ikonic3 , P. Harrison3 and M. J. Manfra1,4,5; Iphysics Dept., Purdue University, West Lafayette, Indiana; 2Birck Nanotechnology 9:45 AM Bll.OB Center, Purdue University, West Lafayette, Indiana; 3Institute of Gallium Nitride Wire Heterostructures Studied with Microwaves and Photonics, School of Electronic and Electrical Synchrotron Radiation Joel Eymeryl, Damien Salomon1 ,2, Engineering, University of Leeds, Leeds, United Kingdolu; 4School of Materials Engineering, Purdue University, West Lafayette, Indiana; Christophe Durand', Francois Rieutord', Odile Robach', 3 4 4 5School of Electrical and Computer Engineering, Purdue University, Jcan-Scbasticn Micha , Manfrcd Burghalnlncr , Elnanucla Di Cola , 5 5 West Lafayette, Indiana. Michael Reynolds', Marie-Ingrid Richard , Stepane Labat , Olivier Thomas5 and Vincent Favre-Nicolin,,6; 'INAC, SP2M, CEA, 3:45 PM BlO.04 Grenoble, France; 2Leti, Minatec campus, CEA, Grenoble, France; Direct Measurement of Refractive Index Dispersion due to 3SPrAM, UMR CEA-CNRS-U.JF, Grenoble, France; 4 ESRF, Intersubband Transitions in GaN/ AlN MQW Elad Gross', Grcnoblc, Francc; 5IN2MP, UMR 7334 CNRS, Marscillc, Francc; Amir Nevet', Asaf Pesach', Eva Monroy2, Shmuel E. Schacham3 , 6Institut Universitaire de France, Grenoble, France. Mcir Orcnstcinl , Mordcchai Scgcv4 and Gad I3ahirl ; lElcctrical Engineering, Technion, Haifa, Israel; 2Equipe Mixte Nanophysique et 10:00 AM BREAK Semiconducteurs, CEA-CNRS, Grenoble, France; 3Electrical Engineering, Ariel University, Ariel, Israel; 4physics and Solid State Inst., Tcchnion, Haifa, Isracl. SESSION I312: Optical Propcrtics of Nitridcs Chair: Martin Kuball 4:00 PM BlO.05 Thursday Morning, August 29, 2013 Photoreflectance Study of the Temperature Dependence of National Harbor 4-5 Excitonic Transitions in Dilute GaAsN Alloys Wataru Okubo' , 1 l 2 Shuhci Yagi , Yasuto Hijikata , Kcntaro Onabc and 10:30 AM B12.0l Hiroyuki Yaguchil; 1 Graduate School of Science and Engineering, Time-Resolved Electroabsorption Measurement of Carrier Saitama University, Saitama, Japan; 2Department of Advanced Velocity in Inverted Polarity, In'_xGaxN/GaN Materials Science, The University of Tokyo, Kashiwa, Japan. Heterostructures due to Internal Electric Fields Blair C. Connelly, Chad S. Gallinat, Nathaniel T. Woodward, Ryan 4:15 PM BlO.OB W. Enck, Gracc D. Mctcalfc, Randy TOlnpkins, Shuai Zhou, Kcnncth Optical Properties of Nonpolar III-Nitrides for Intersubband M. .Jones, Hongen Shen and Michael Wraback; US Army Research Photodetectors Daniel Fee7,ell, Yagya Sharma and Sanjay Krishna; Laboratory, Adelphi, Maryland. University of New Mexico, Albuquerque, New Mexico. 10:45 AM B12.02 Towards Optical Characterization of Individual Acceptor 2 SESSION I311: Charactcrization of Nitridcs Centers in GaN M. S. Mohajerani', M. A. Reshchikov , O. 3 3 3 l l 4 Chair: Fernando Ponce Volciuc , T. Voss , J. Gutowski , X. Wang , A. Bakin , S. Peters , Thursday Morning, August 29, 2013 H. Hofer4 , S. Kueck4 and A. Waag'; 'Institute of Semiconductor National Harbor 4-5 Technology, Braunschweig University of Technology, Braunschweig, Germany; 2Physics Department, Virginia Commonwealth University, 8:30 AM Bll.Ol Richlnond, Virginia; 31nstitutc of Solid Statc Physics, SClniconductor Direct Mapping of Strain and Charge Reorganization in a Optics Group, Bremen University, Bremen, Germany; 4 P hysikalisch Strained InGaN/GaN with Nonpolar Orientation Using Inline Technische Bundesanstalt, Braunschweig, Germany. Electron Holography .Ja-kyung Lee, Kyung Song, Woo Young .Jung, .Jong Kyu Kim, Chan Gyung Park and Sang Ho Oh; POSTECH, 11:00 AM B12.03 Pohang, Korea, Republic of. Does Temperature-Induced "S-Shaped" Photoluminescence Peak Shift Directly Indicate Potential Tail? Takuya 07,aki, 8:45 AM Bll.02 Junichi Nishinaka, Mitsuru Funato and Yoichi Kawakami; Electronic Nanoscale Imaging of Strain, Composition, Polymorphism Science and Engineering, Kyoto University, Kyoto, Japan. and Carrier Distribution of InN Segregation Inside a Single InGaN/GaN Quantum Well Vertical Nanorod 11:15 AM B12.04 Emanuele Polianil , Markus R. Wagner1 ,2, Sebastian J. Reparazl ,2, Low Field Magneto-Optical Kerr Effect Study of Excitons in 3 3 4 4 Martin Mandl , Martin Strassburg , Xiang Kong , Achim Trampert , Polar and Non-Polar GaN Films Ashish Arora, Sandip Ghosh, Clivia M. Sotolnayor Torrcs2 , Axel Hoffluannl and Janina Nirupam Hatui and Arnab Bhattacharya; Department of Condensed Maultzschl; lInstitut fur Festkorperphysik, Technische Universitat Mattcr Physics and Matcrials Scicncc, Tata Institutc of Fundalncntal Berlin, Berlin, Germany; 2Catalan Institute of Nanotechnology, Research, Mumbai, Maharashtra, India. Bellaterra, Spain; 30SRAM Opto Semiconductors GmbH, Regensburg, Germany; 4 Paul Drude Insitute, Berllin, Germany. 11:30 AM B12.05 Anomalous Terahertz Emission in c-plane InN due to 9:00 AM Bll.03 In-plane Electric Fields Nathaniel T. Woodward', Chad Gallinat', A Combined /L-Cathodoluminescence and Grace D. Metcalfe', Hongen Shen', Michael Wraback' and .James S. /L-Photoluminescence Investigation of the Degradation of Speck2 ; 'RDRL-SEE-M, U.S. Army Research Laboratory, Adelphi, InGaNjGaN Laser Diodes Mattco Mcncghinil , Silnonc Carrarol , Maryland; 2Matcrials Dcpartlncnt, Univcrsity of California at Santa l l 1 Silnonc Vaccari , Nicola Trivcllin , Gaudcnzio Mcncghcsso , I3arbara, Santa Barbara, California.

11 SESSION B14: Visible Quantum Dots 11:45 AM B12.06 Chair: Yoichi Kawakami Effects of Carrier Transport and Local Lattice Temperature Friday Morning, August 30, 2013 on Nonradiative RecOlllbination processes in InN FillllS Chesapeake 4-6 3 Daichi Imai1, Yoshihiro Ishitani1, Xinqiang Wang , Kazuhide 2 2 Kusakabe and Akihiko Yoshikawa ; lGraduate School of Electronic 8:30 AM B14.01 and Engineering, Chiba Univ., Chiba, Japan; 2Ccntcr for Srnart Single Photon Emission from Site-Controlled InGaN Green Innovation, Chiba Univ., Chiba, Chiba, Japan; 3School of Quantum Dots up to 90 K Lei Zhangl , Chu-Hsiang Teng2 , Tyler Physics. Pking Univ.• Beijing, China. Hilll , Brandon Demory2, Pei-Cheng Ku2 and Hui Dengl ; lDepartment of Physics, University of Michigan, Ann Arbor, Michigan; 2Department of Electrical Engineering and Computer SESSION B13: Optical Properties of Quantum Wells Scicncc, Univcrsity of Michigan, Ann Arbor, Michigan. Chair: Motoaki Iwaya Friday Morning, August 30, 2013 8:45 AM B14.02 National Harbor 4-5 Non-Polar (11-20) InGaN Quantum Dots with Short Exciton Lifetimes Grown by Metal-Organic Vapour Phase Epitaxy l l 2 8:30 AM B13.01 Robcrt M. Elncryl, Tontong Zhu , Fabricc Ochlcr , Bcnjarnin Rcid , Radiative and Nonradiative Recombination in GaInN/GaN Robcrt A. Taylor2 , Mcnno J. Kappcrsl and Rachel A. Olivcrl ; Quantum Wells at Low and High Carrier Density ­ l IMaterials Science and Metallurgy, University of Cambridge, Implications for the Validity of ABC Models Torsten Langer , Cambridge, United Kingdom; 2physics, University of Oxford, Oxford, 2 2 2 Alexej Chernikov , Dimitri Kalincev , Marina Gerhard , Uwe United Kingdom. l 2 1 Rossow , Martin Koch and Andreas Hangleiter ; 1 Institute of Applied Physics, Tcchnischc Univcrsitiit Braunschweig, Braunschweig, 9:00 AM B14.03 Germany; 2Experimentelle Halbleiterphysik, Philips-Universitat Non-Classical Light Generation from InGaN Single Quantum Marburg, Marburg, Germany. Dots Embedded in Vertical Nanostructures with a Pyramidal Tip Je-Hyung Kim, Young-Ho Ko, Su-Hyun Gong, Suk-Min Ko and 8:45 AM B13.02 Yong-Hoon Cho; KAIST, Dacjcon-si, Korca, Rcpublic of. Efficient Optically Pumped Green Light-Emitting Devices l Using GaInN/GaN Multiple Quantum Wells Michael Binder ,3, 9:15 AM B14.04 l l l Dario Schiavon ,2, Andreas Loeffler , Thomas Lehnhardt and High Temperature Stability in Non-polar (11-20) InGaN Matthias Peterl ; lOSRAM Opto Semiconductors GmbH, Regensburg, Quantum Dots: Excition and Biexciton Dynamics Gcrrnany; 2Institllt flir Optoclcktronik, Univcrsitiit Ulrn, Ulrn, Bcnjarnin P. Rcidl , Tongtong Zhu2 , Christophcr C. Chanl , Claudius Germany; 3Fraunhofer-Institut fur Angewandte Festkorperphysik, Kochcrl , Fabricc Ochlcr2 , Robcrt Elncry2, Mcnno J. Kappcrs2, Freiburg, Germany. Rachel A. Oliver2 and Robert A. Taylorl ; lphysics, University of Oxford, Oxford, United Kingdom; 2Materials Science and Metallurgy, 9:00 AM B13.03 University of Cambridge, Cambridge, United Kingdom. Offset in Emission Energy between Optical Polarization Switching and Valence Band Anti-Crossing in Semipolar l l 9:30 AM B14.05 InGaN Quantum Wells Lukas Schade ,2 and Ulrich T. Schwarz ,2; Site-Selective Single Photon Emission from InGaN/GaN 1 Optoelectronics, IMTEK, University Freiburg, Freiburg, Germany; Tapered Structure Coupled to Surface Plasmonic Modes 20ptoclcctronic Modulcs, Fraunhofcr Institutc for Applicd Physics, Su-Hyun Gongl , Je-Hyung Kiml , Young-Ho Kol , Christophe Freiburg, Germany. Rodriguezl , Jonghwa Shin2 and Yong-Hoon Chol ; lDepartment of Physics, KAIST, Dacjcon, Korca, Rcpublic of; 2Dcpartrncnt of 9:15 AM B13.04 Materials Science and Engineering, KAIST, Daejeon, Korea, Republic Radiative and Non-Radiative Decay Rates in Green-Emitting of. InGaN/GaN Quantum Well Structures Felix Nippertl , Anna Nirschl2 , Ines Pietzonka2, Hans-Juergen Lugauer2 , Thomas Kurel , 9:45 AM B14.06 Christian Nenstiell , Gordon Callsenl , Max Bueglerl , Martin Engineering InGaN Quantum Dots for Ultra-Large (>2500) Strassburg2 and Axel Hoffmannl ; lInstitut fiir Festkorperphysik, Purcell's Factor and Enhanced Radiative Efficiency Tcchnischc UnivcrsiHit Bcrlin, Bcrlin, GCrInany; 20SR AM Opto 2 l 2 Brandon Demoryl, Tyler Hi1l , Chu-Hsiang Teng , Lei Zhang , Hui Semiconductors GmbH, Regensburg, Germany. Deng2 and Pei-Cheng Kul ; lElectrical Engineering and Computer 9:30 AM B13.05 Science, University of Michigan, Ann Arbor, Michigan; 2Department Optical Properties of Extended and Localized States in of Physics, University of Michigan, Ann Arbor, Michigan. m-Plane InGaN Quantum Wells Saulius Marcinkeviciusl , 2 2 2 10:00 AM B14.07 Kathryn Kelchner , Shuji Nakamura , Steven DenBaars and James 2 Highly-efficient Optical Saturable Absorbers at 1.55 I-'m Speck ; lMaterials and Nano Physics, KTH Royal Institute of Based on GaN/AIN QW and QD Waveguides Tcchnology, Kista, Swcdcn; 2Matcrials Dcpartrncnt, Univcrsity of 1 1 Laura Monteagudo-Lerma , S. Valduezm-Felip 2, A. Nune:ti-Cascajero , California at Santa Barbara, Santa Barbara, California. 3 4 5 F. Naranjol, P. Corredera , L. Rapenne , G. Strasser , E. Monroy2 l 9:45 AM B13.06 and M. Gonzalcz-Hcrracz ; IUnivcrsity of Alcala, Alcala dc Hcnarcs, Properties of High Excitation Density Recombination Madrid, Spain; 2CEA-Grenoble, INAC/SP2M/NPSC, Grenoble, Dynamics in InGaN/GaN Quantum Well Structures in France; 3Instituto de Optica, CSIC, Madrid, Madrid, Spain; l Relation to Efficiency Droop Matthew Daviesl , Tom Badcock , 4INP-Grenoble/Minatec, Grenoble, France; 5Zentrum fiir Mikro- und 2 2 Phil Dawson1, Rachel Oliver , Menno Kappers and Colin Nanostrukt., Vienna, Austria. Humphreys2; Iphysics & Astronomy, University of Manchester, Manchcstcr, Unitcd Kingdoln; 2Matcrials Scicncc and Mctallurgy, 10:15 AM BREAK University of Cambridge, Cambridge, United Kingdom.

10:00 AM B13.07 Light Emission Polarization Properties of (1-101) InGaN/GaN Stripe MQWs with Cavity Structure on Patterned Si Substrate Maki Kushimotol , Tomoyuki Tanikawal , Yoshio Hondal , Masahito Yamaguchil ,2 and Hiroshi Amanol ,2; lGraduate School of Engineering, Nagoya University, Aichi-ken, Japan; 2Akasaki Rcscarch Ccntcr, Nagoya Univcrsity, Aichi-kcn, Japan.

10:15 AM BREAK

12 McGill UniversityMcGill Current-Voltage Characteristics of Single InGaN/GaN Nanowire LEDs Binh Huy Le, Shamsul Arafin, Nhung Hong Tran, Hieu Pham Trung Nguyen, Songrui Zhao and Zetian Mi* Department of Electrical and Computer Engineering, McGill University Introduction *Email: [email protected]

Recently, III-nitride nanowire LEDs have been intensively studied. They promise significantly improved performance, due to the drastically reduced dislocation densities and polarization fields. To date, however, their practical applications have been limited by the low electrical efficiency and quantum efficiency. We have recently developed phosphor-free InGaN/GaN dot-in-a-wire white LEDs on Si substrate that can exhibit relatively high internal quantum efficiency and reduced efficiency droop. In this work, we have further examined the current-voltage (I-V) characteristics of single nanowire LEDs. It is observed that the photocurrent can be significantly enhanced when the active region is excited using a 405 nm laser. Detailed analysis suggest that the electrical performance of nanowire LEDs is severely limited by the surface band bending and the resulting carrier depletion in the active region. This study also shows that the carrier injection efficiency of nanowire LEDs is compromised by the carrier spillover and the resulting surface recombination. InGaN/GaN dot-in-a-wire heterostructure Nanowire LED Growth and Fabrication Optical and Electrical Properties InN nanowires InGaN/GaN dot-in-a-wires

Quantum dots

Absence of surface Large area InGaN/GaN dot-in-a-wire LEDs can exhibit relatively high internal quantum efficiency and electron accumulation reduced efficiency droop. However, the electrical efficiency is limited by the high turn-on voltage and large resistance. III-nitride nanowire (NW) heterostructures are grown directly on Si substrate by plasma-assisted molecular beam epitaxy under nitrogen rich conditions.

Tunable Emission

 Schematic illustration of the  Temperature-dependent Intrinsic I-V characteristics of single Single InGaN/GaN dot-in-a- setup for measuring the I-V normalized PL spectra of single nanowire LEDs, with turn-on voltage ~ wire LEDs are fabricated characteristics under light NW device with peak emission 3.5 V and series resistance ~ 1.2 GΩ. using e-beam lithography illumination. wavelengths of ~ 510 nm.  Inset: Photocurrent under dark and process and Ni/Au illumination conditions. metalization. Single nanowire LED

Conclusion

The current-voltage characteristics and ultimately the electrical efficiency of nanowire LEDs (a) (b) is severely limited by the band bending and surface depletion of the device active region. Carrier spillover from the device active region and the resulting surface recombination may lead to very low carrier injection efficiency of nanowire LEDs.  (a) Semilog plot of the enhancement factor Γ = I /I measured at This study provides a unique approach for examining the carrier leakage process in Room temperature I-V ph dark 300 K under 8 V bias under various excitation power levels. nanowire devices and for probing the effect of surface electronic properties on the characteristics under optical excitation (λ ~ 405 nm)  (b) Photoresponsivity as a function of bias voltage. The device exhibits performance of nanowire LEDs. -1 References: a photoresponsivity up to 50 A.W for a power of ~ 6 nW. [1] Nguyen P T H, Zhang S, Cui K, Han X, Fathololoumi S, Couillard M, Botton G A and Mi Z 2011 Nano Lett. 11(5):1919-24.  (Left) The quantum dot active region is fully [2] Nguyen P T H, Cui K, Zhang S, Djavid M, Korinek A, Botton G A and Mi Z 2012 Nano Lett. 12(3):1317-23. [3] Zhao S, Fathololoumi S, Bevan K H, Liu D P, Kibria M G, Li Q, Wang G T, Guo H and Mi Z 2012 Nano depleted, leading to large resistance under dark and Lett. 12(6):2877-82. forward biasing conditions. [4] Zhao S, Mi Z, Kibria M, Li Q and Wang G T 2012 Phys. Rev. B 85(24):245313. [5] Ahn B-J, Kim T-S, Dong Y, Hong M-T, Song J-H, et al. 2012 Appl. Phys. Lett. 100(3):031905.  (Right) Under illumination, photo-generated [6] Calarco R, Marso M, Richter T, Aykanat A I, Meijers R, Hart A, et al. 2005 Nano Lett. 5(5):981. carriers in the active region may escape from the [7] Chen H Y, Chen R S, Chang F C, Chen L C, Chen K H, Yang Y J. 2009 Appl. Phys. Lett. 95(14):143123. dots and reduce the depletion region width, thereby [8] Sanford N, Blanchard P, Bertness K, Mansfield L, Schlager J, Sanders A, et al. 2010 J. Appl. Phys. leading to enhanced current conduction. 107(3):034318.