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IEEE E D S ELECTRONELECTRON DDEVICESEVICES SSOCIETYOCIETY Newsletter

APRIL 2006 Vol. 13, No. 2 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

2006 IEEE Symposium Table of Contents on VLSI Technology Upcoming Technical Meetings ...... 1 • 2006 VLSI • 2006 ASMC • 2006 IITC • 2006 UGIM Outgoing Message from the 2004-5 EDS President...... 3 Society News...... 9 • December 2005 AdCom Meeting Summary • Message from the EDS Newsletter Editor-in-Chief • EDS Educational Activities Committee Report • EDS Nanotechnology Committee Report • EDS Photovoltaic Devices Committee Report • 2005 EDS J.J. Ebers Award Winner • 2006 EDS J.J. Ebers Award Call for Nominations • 2005 EDS Distinguished Service Award Winner • 2006 Charles Stark Draper Prize Hilton Hawaiian Village, Honolulu, Hawaii • 23 EDS Members Elected to the IEEE The 26th Annual IEEE Symposium on VLSI Technology will Grade of Fellow be held June 13-15, 2006, at the Hilton Hawaiian Village in • 2005 Class of EDS Fellows Honored at IEDM Honolulu, Hawaii. The VLSI Technology Symposium is joint- ly sponsored by the IEEE Electron Devices Society (EDS) and • EDS Members Named Winners of the Japan Society of Applied Physics (JSAP). 2006 IEEE Technical Field Awards The VLSI Symposium is well recognized as one of the • EDS Regions 1-3 & 7 Chapters Meeting Summary premiere conferences on semiconductor technology, and research results presented at the conference represent a • 2005 EDS Chapter of the Year Award broad spectrum of VLSI technology topics, including: • EDS Members Recently Elected • New concepts and breakthroughs in VLSI devices and to IEEE Senior Member Grade processes. • New functional devices including quantum effect devices • 2006 EDS Graduate Student Fellowship with possible VLSI implementation. Final Call for Nominations • Materials innovation for MOSFET and interconnect in VLSI. Regional and Chapter News ...... 25 • Advanced lithography and fine patterning technologies EDS Meetings Calendar ...... 30 for high density VLSI. • Process/Device modeling of VLSI devices. EDS Archival Collection on DVD ...... 32 • Packaging and reliability of VLSI devices.

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Your Comments Solicited Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected] 13eds02.qxd 3/6/06 8:36 AM Page 2

ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF

President Vice-President of Meetings Editor-In-Chief Ilesanmi Adesida Jon J. Candelaria Ninoslav D. Stojadinovic University of Illinois Motorola University of Nis E-mail: [email protected] E-mail: [email protected] E-Mail: [email protected]

President-Elect Vice-President of Membership Cor L. Claeys Albert Wang REGIONS 1-6, 7 & 9 Scandinavia & Central Europe IMEC Illinois Institute of Technology Eastern, Northeastern & South- Andrzej Napieralski E-mail: [email protected] E-mail: [email protected] eastern USA (Regions 1, 2 & 3) Technical University of Lodz Ibrahim M. Abdel-Motaleb E-Mail: [email protected] Vice-President of Publications Treasurer Northern Illinois University Juin J. Liou Renuka P. Jindal UK, Middle East & Africa E-Mail: [email protected] University of Central Florida University of Louisiana at Lafayette Zhirun Hu E-Mail: [email protected] E-Mail: [email protected] Central USA & Canada University of Manchester (Regions 4 & 7) E-mail: [email protected] Secretary Vice-President of Regions/ Jamal Deen Chapters Western Europe John K. Lowell McMaster University Consultant Cor L. Claeys Cora Salm E-Mail: [email protected] E-Mail: [email protected] IMEC University of Twente E-Mail: [email protected] Southwestern & Western USA E-Mail: [email protected] Jr. Past President (Regions 5 & 6) Vice-President of Technical Activities Hiroshi Iwai Sunit Tyagi REGION 10 Mark E. Law Tokyo Institute of Technology Intel Australia, New Zealand & E-mail: [email protected] University of Florida South Asia E-Mail: [email protected] E-Mail: [email protected] Xing Zhou Sr. Past President Latin America (Region 9) Nanyang Technological University Steven J. Hillenius IEEE Newsletters Jacobus W. Swart Paul Doto, Paul DeSesso E-Mail: [email protected] Agere Systems State University of Campinas E-mail: [email protected] IEEE Operations Center Northeast Asia E-Mail: [email protected], E-mail: [email protected] Kazuo Tsutsui [email protected] REGION 8 Vice-President of Awards Tokyo Institute of Technology Alfred U. Mac Rae Eastern Europe & The Former Executive Director E-mail: [email protected] Mac Rae Technologies Soviet Union E-Mail: [email protected] William F. Van Der Vort East Asia IEEE Operations Center Alexander V. Gridchin Novosibirsk State Hei Wong Vice-President of E-Mail: [email protected] Technical University City University of Hong Kong Educational Activities Business Coordinator E-mail: [email protected] E-Mail: [email protected] Paul K. L. Yu Joyce Lombardini University of California at San Diego IEEE Operations Center E-Mail: [email protected] Email: [email protected]

EDS AdCom Elected Members-at-Large CONTRIBUTIONS WELCOME Elected for a three-year term (maximum two terms) with ‘full’ voting privileges Readers are encouraged to submit news items concerning the Society and its members. Please send your ideas/articles directly to either the Edi- 2006 Term 2007 Term 2008 Term tor-in-Chief or appropriate Editor. The e-mail addresses of these individu- S.S. Chung (1) J. N. Burghartz (1) G. Baccarani (1) als are listed on this page. Whenever possible, e-mail is the preferred T. Hiramoto (2) M. J. Chan (1) J. Deen (1) form of submission. L. M. Lunardi (2) M. Estrada del Cueto (2) F. J. Garcia Sanchez (2) M. Lundstrom (1) S. Ikeda (1) J.B. Kuo (1) Newsletter Deadlines A. Wang (1) R. J. Nikolic (1) J.J. Liou (2) Issue Due Date H.S.P. Wong (2) N. D. Stojadinovic (2) H. Shang (1) X. Zhou (1) J. J. Wesler (1) J. W. Swart (1) January October 1st S. Tyagi (1) April January 1st July April 1st October July 1st

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331. Copyright © 2006 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy.

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OutgoingOutgoing MessageMessage fromfrom thethe 2004-52004-5 EDSEDS President President

I would like to people, who enjoy the benefits of the cally co-sponsored conferences, are take the opportu- EDS, support it by joining the Society. preserved on the IEEE Xplore system. nity in completing In the meantime, EDS has to establish However, there are only a few confer- my term as Presi- a mechanism to make the Society ences with information on Xplore dat- dent of the Elec- attractive enough to encourage them ed prior to 1988. Different from the tron Devices to join. This has been the consensus journals, most of the archived confer- Society (EDS), to of the EDS as confirmed by ExCom ence proceedings are not preserved express my sin- and AdCom for the past two years in libraries and eventually will disap- cere appreciation during my term as President. Thus, pear in the years ahead. It is our duty Hiroshi Iwai to the members of we have been working to initiate a to make a plan and execute it, as soon EDS, the EDS number of new activities/programs to as possible, before they disappear. Administrative Committee (AdCom)/ make EDS attractive, to approve them New ideas and findings have been Executive Committee (ExCom), and at the AdCom, and to execute them. published either at conferences or in the EDS Executive Office, who have Direct motivation for the confer- the letters type publications, and then all worked hard together and support- ence attendees to join the IEEE EDS is some of them are later published as ed me to reform our Society, which is to change the conference registration larger size articles in transactions and now facing a big change in the value fee differential between members and journals. Thus, preserving the confer- of the membership. In the past, the non-members to be larger than the ence archive is a very important ini- IEEE EDS journal subscriptions and cost of the membership fees of the tiative. Regarding journal papers, the IEEE EDS conference proceedings IEEE plus EDS. We have been negoti- number of full paper versions of the were the main reason for individuals ating with the EDS sponsored confer- conference-published papers in T-ED to become IEEE and EDS members. ences concerning the registration fee is decreasing significantly, although Now, regardless if they are members differential between members and some of them are published in non- or non-members, the employees and non-members and we have received IEEE journals. We are working with students of big companies and uni- agreement from some of the confer- the IEDM to have at least 25 best versities who purchase the subscrip- ences, such as the IEDM. We have papers of the IEDM published per tions and conference proceedings already started to send a solicitation year, in T-ED as invited papers. We from the IEEE, can access the journals letter to the first author of the papers will work with other conferences to instantaneously and free of charge accepted to the EDS sponsored con- recommend good papers to be pub- through the web. Thus, the motiva- ferences and journals to join the IEEE lished in T-ED. tion to join the IEEE EDS is gone for EDS, if they are not already a mem- EDS is a society that covers all the the majority of the members. Now, ber. It is a controversial topic now, but technical field of electron devices. what is the value of EDS for mem- we might have to think about charg- We are working with EDS confer- bers, as well as non-members around ing a moderate page fee for journal ences, through EDS technical com- the world? EDS is a global society paper publication to non-members in mittees, to watch newly emerging which organizes many top level inter- the future, as done by some other fields and to include the fields into national conferences (such as the journals. As I wrote in past issues of our Society by providing special ses- International Electron Devices Meet- the EDS Newsletter, we issued a DVD sions at conferences, creating topical ing - IEDM) and journals (such as archive (EDS Archival Collection), workshops, or inviting specialists to Electron Device Letters - EDL and which includes all the issues of T-ED, the conferences. Not only the emerg- Transactions on Electron Devices - T- EDL, and the Technical Digests of the ing fields, but also developing the ED) for the companies and universi- IEDM from their beginning. The col- existing field is important. Displays, ties to publish their technical lection is only offered to EDS mem- sensors and semiconductor manu- accomplishments. In other words, bers and at a very low price of $30 facturing, for examples are the fields electron devices engineers and their USD ($9.95 USD for students). This is in which EDS conference activity is affiliated organizations can make their a great privilege and benefit for EDS not so strong, and we need to achievement recognized world-wide, members. Furthermore, we are in the enhance it. EDS has only a small por- with its quality guaranteed by the process of planning a way to preserve tion of the electron devices manufac- IEEE EDS. Also, they can obtain the the archives of the proceedings of as turing engineers or industrial people newest technical information by many conferences for which EDS is as its members. In order to attract attending these conferences and sub- sponsoring, co-sponsoring and tech- industrial people, we are working scribing to the journals. Thus, EDS is nically co-sponsoring. Almost all of with conferences such as the IEDM a community consisting of the above the proceedings since 1988 of EDS to provide industrial exhibitions at people and it is desirable that the sponsored, co-sponsored and techni- the conferences.

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Besides conferences and journals, meet the local people to solicit to form ed awards and create a new EDS Edu- chapters are another fundamentally chapters in many areas of the world. cation Award. EDS started the prac- important unit of EDS activities. Com- As a result, the number of chapters tice of issuing certificates of munication with local members can has increased from 109 to 120 in the appreciation each year to the people be done through the chapters. Activi- past 2 years, and the formation of who contributed to the EDS, in addi- ties of the EDS Regions/Chapters, many new chapters is now in tion to those EDS AdCom members Education, and Membership commit- progress. However, it is still insuffi- who step down each year from their tees can also be implemented through cient to cover the areas, and this effort positions. the chapters. Besides the benefit to will be strongly continued in future These are the EDS initiatives for the members to attend top level lec- years. For most of the underdevel- which I have been working with the tures, having Distinguished Lecturers oped countries, the IEEE membership members and the EDS Executive (DL) is one of the most important fee of about $120 USD is extremely Office as the President for the past opportunities for EDS to communicate expensive for the local people, two years. Our philosophy is to pro- to its members. We increased the although the EDS membership fee is vide as much service as we can to number of the Distinguished Lecturers only $11 USD. Thus, EDS promotes promote the ED activities. These ini- (DL) from 99 to 139, and lectures from the Membership Fee Subsidy Pro- tiatives will be continued by the new 122 to 142, over the past two years. gram which allows 12 members in a President, Ilesanmi Adesida; but it is Also, we organized 12 mini-colloquia chapter to be subsidized each year. you, members of the EDS, who can of DLs throughout the world over the We approve the subsidy for founding improve the EDS for yourself. We are past two years. We will continue the members of the new chapter, so that a looking forward to your participation effort to further increase the number sufficient number (12) of the founding and feedback of our initiatives. Thank of DLs. Asia (including China and members can be easily obtained. you again for your great support for India) and Latin America are the Also, we encourage non-members to the past two years. largest growth areas for the electron obtain EDS affiliate memberships, as devices and engineers in the near the IEEE affiliation fee is about half the Hiroshi Iwai future. However, there are so many price of the regular membership fee. 2004 – 2005 EDS President big cities or areas where chapters do In order to promote educational Tokyo Institute of Technology not exist. EDS has sent delegations to activity, we will increase student relat- Yokohama, Japan

Upcoming Technical Meetings

2006 IEEE International Interconnect Technology Conference (IITC)

The ninth annual IEEE IITC (Interna- 2006, at the San Francisco Airport spectives. Ever-increasing demands tional Interconnect Technology Confer- Hyatt Regency Hotel, conveniently for greater circuit density and perfor- ence), the premier conference located 20 minutes from Silicon Valley mance present enormous connectivity dedicated to advanced interconnect and downtown San Francisco. The challenges, and have focused attention technology, will be held June 5-7, conference will be preceded by a Short on the design, cost, performance and Course on leading-edge interconnect reliability demands on interconnects. technology on Sunday, June 4th. New materials, architectures, commu- The IITC is the world’s leading nication mechanisms and process forum for professionals in semicon- technologies are needed, and new ductor processing, academia and approaches are emerging in this rapid- equipment development, to gather, ly evolving area to meet these chal- present, discuss and debate exciting lenges. The IITC facilitates progress on new science and technology, through critical issues and technologies for the oral presentations, poster displays, fabrication of advanced interconnects exhibit booths and supplier seminars. in monolithic ICs, multi-chip modules The IITC was established with the (MCMs) and state-of-the-art packages. support of the IEEE Electron Devices Society to address interconnect issues Short Course from both fundamental materials This conference provides several San Francisco Airport Hyatt Regency Hotel viewpoints as well as system-level per- venues for learning and professional

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interaction. The popular Short Course interconnect applications structures, dry etching of metal, once again will address advanced 3. CMP/Planarization: Dielectric/Metal dry cleaning processes, plasma interconnect process, design and relia- CMP processes, equipment and induced damage, etc. bility issues. Participation is strongly metrology issues, and Alternate 11. Alternative Interconnects: Advanced encouraged by those wishing to bene- planarization techniques. interconnect concepts, optical and fit from a combination of tutorials on 4. Metallization: Metal deposition RF interconnect, superconductors, interconnect fundamentals, briefings processes/equipment (PVD, CVD, nanotechnology-based inter- on the latest interconnect technology ALD, electroplating) and materials connect, etc. advances, and direct interaction with characterization, with particular experts actively at work in the field. emphasis on advanced aluminum Given the rapid acceleration of inte- and copper metallization. grated circuit technology, the last topic Supplier Exhibits/Seminars 5. Process Integration: Multilevel provides an important forum for dis- Without doubt, the cost and perfor- interconnect processes, clustered cussion of the interconnect crisis and mance of ULSI circuits strongly depend processes, novel interconnect potential paradigm shifts to novel on the capability and productivity of structures, contact/via integration, interconnect schemes. interconnect materials and processing metal barrier and materials inter- Professionals involved in intercon- equipment. In recognition of this criti- face issues, etc. nect-related activities are strongly cal role, supplier exhibits and seminars 6. Process Control/Modeling: CMP, encouraged to participate in this excit- are included as an integral part of the metal/dielectric deposition and ing conference. Detailed information IITC technical program and will be held etching processes, PVD, CVD, elec- can be obtained from the IITC website: on the first and second days of the con- troplating, etc. http://www.ieee.org/conference/iitc. ference. These exhibits and seminars 7. Reliability: Metal electromigration For additional information or inquiries offer additional learning and network- and stress voiding, dielectric regarding supplier exhibits and semi- ing opportunities, and provide alterna- integrity and mechanical stability, nars, please contact Wendy Walker, tive forums to address specific thermal effects, passivation issues, IITC Administrator at +1 301-527-0900 technological challenges. interconnect reliability predic- Ext. 104, Fax: +1 301-527-0994, or tion/modeling. email: [email protected]. Presentations 8. Interconnect Systems: Intercon- Oral presentations and poster papers nect performance modeling and Christopher Case offered during the conference span a high frequency characterization, General Co-Chair – North America broad range of interconnect technolo- interconnect system integration BOC Edwards gy topics, including: and advanced packaging concepts Murray Hill, NJ, USA (flip-chip, chip-on-chip, MCM, etc.), 1. Silicides/Salicides: Characteriza- novel architectures. Jeong-gun Lee tion, new materials and processes, 9. System-on-a-Chip: Interconnect, General Co-Chair - Asia electrical performance and process design and processing of SOC, MagnaChip Semiconductor integration issues for metal sili- embedded memory processing, Chungbuk-do, Korea cides/salicides. materials and integration, RF and 2. Dielectrics: Dielectric materials high frequency passive compo- Didier Louis (low k, high k, ARCs, etc.) and nents, noise and cross-talk issues General Co-Chair - Europe deposition processes (vapor 10. Dry Processing: Dry etching of CEA/LETI deposition, CVD, spin-on, etc.) for vias, trenches and damascene Grenoble, France

2006 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

“Advancing the Excellence of Semi- and a relevant panel discussion, Electron Devices Society (EDS), the conductor Manufacturing” ASMC attracts engineers and man- IEEE Components, Packaging, and agers from fabs around the world Manufacturing Technology Society ASMC 2006 continues a long tradition who want to advance their semicon- (CPMT), and SEMI. of unveiling breakthroughs in semicon- ductor manufacturing knowledge The conference, which alternates ductor manufacturing—from fab pro- with real solutions…direct from the between the U.S. and Europe to bet- ductivity and profitability to advanced fab. The IEEE/SEMI Advanced Semi- ter serve the interests of its interna- process controls and device yield. conductor Manufacturing Confer- tional audience, returns to Boston, With more than 90 peer-reviewed ence (ASMC) is an international May 22–24, 2006, at the Sheraton technical papers, expert keynotes conference sponsored by the IEEE Boston Hotel.

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Peer-reviewed papers from nine- Me? Monday closes with the popu- to learn more about new technical teen nations and more than 49 com- lar ASMC poster reception, spon- subjects. panies and institutions have been sored by KLA-Tencor. This session As an added bonus, this year’s selected for presentation in 14 ses- encourages interaction between ASMC includes a two-hour update sions. This year’s event covers poster authors and conference on the International Technology these topics of interest to semicon- attendees. Roadmap on Semiconductors ductor manufacturing engineers On Tuesday, May 23, Dr. Chen- (ITRS). Industry experts will provide and managers: ming Hu, TSMC Distinguished Chair an overview of various ITRS topics • advanced metrology and Professor of Electrical Engi- including factory automation, front- • advanced processes and materials neering & Computer Sciences, Uni- end processes, lithography and • APC versity of California, Berkeley, will yield enhancement. Presentations • cleaning and surface preparation discuss CMOS issues. Tuesday will be followed by a panel discus- • cost reduction ends with a thought-provoking pan- sion with Q&A. • defect inspection el discussion, moderated by Tom Who should attend ASMC 2006? • equipment reliability/productivity Cheney, editor of MICRO Magazine, Semiconductor professionals • factory automation/dynamics and featuring a distinguished panel involved in production control, • defect inspection of industry leaders who will share process control, process transfer, • equipment reliability/productivity their views on globalization, yield and cycle time improvement, • human resource development growth, productivity and profitabili- cost reduction, preventive mainte- • lithography ty. The topic is Maintaining the Pro- nance, line supervision, facilities • yield enhancement/modeling ductivity Curve: Is a Bigger Wafer fab operation, quality, training and • yield productivity. Needed? education. The third keynote, Dr. Venu ASMC 2006 will take place at the The conference will recognize a Menon, Vice President and CMOS1 Sheraton Hotel, situated in the “best paper award,” sponsored by Manager Silicon Technology Devel- charming and historic Back Bay sec- Toppan Photomasks, and a “best opment, Texas Instruments, Inc., will tion of Boston. The hotel is ideally student paper award,” sponsored discuss Challenges and Opportuni- located for business in one of Ameri- by ISMI. ties for Volume Manufacturing at ca’s most historic and dynamic ASMC 2006 also features a dis- 65nm and Beyond. cities. Four miles from Boston’s tinguished line-up of keynote Back by popular demand are the Logan Airport, the Sheraton Hotel is speakers to begin each day of the luncheon round tables. Subject-mat- close to the Financial District, Down- conference. On Monday, May 22, ter experts will lead round table dis- town Crossing, the scenic Charles Deb Newberry, author and profes- cussions on ASMC topics. These River, many of Boston’s favorite sor, will present Nanotechnology: present excellent opportunities to shops, restaurants, and museums, What is it and How Does it Apply to meet others in your interest area or and a short walk to the Prudential Center and famous Newbury Street. A block of sleeping rooms has been reserved for conference par- ticipants at the Sheraton Hotel. To make a reservation, contact the Sheraton Hotel by May 1st at +1 617-236-2000 or toll-free +1 800- 325-3535. To register online and for directions, visit www.semi.org/ asmc and click on the hotel infor- mation. Mention “ASMC” or “SEMI” to obtain the special group rate. For schedule information and to register on-line, visit http:// www.semi.org/asmc or contact Ms. Margaret Kindling, SEMI Washing- ton, D.C., ([email protected]).

Margaret Kindling ASMC Program Manager SEMI Washington, D.C. Greater Boston Convention & Visitors Bureau Washington, D.C., USA

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2006 University/Government/Industry Microelectronics Symposium (UGIM)

The 16th Biennial University/Govern- • MEMS programs, courses, applica- ment/Industry Microelectronics Sym- tions, processing, interactions, and posium (UGIM’06) will be held in San research electronic packaging tech- Jose, California, June 25-28, 2006, on nologies, processes and materials the campus of San Jose State Universi- • Standard silicon and compound ty (SJSU). For the past 30 years this semiconductors symposium has had the unique mis- • Bioengineering and Biotechnology sion to bring together micro/nanofabri- • Nanotechnology and cation researchers and educators from nanofabrication these three sectors, not only to present • Metrology and sensors new technical results, but also the pro- • University microelectronics research grams, collaborations, and laboratories San Jose College of Engineering facilities that make them possible. Representa- tives of university micro/nanofabrica- The UGIM’06 technical session will Two distinguished speakers will tion laboratories traditionally attend begin on Monday, June 26th at 8:30 give invited talks at the conference: UGIM to exchange information. Gov- AM in the auditorium of SJSU’s Col- • Meyya Meyyappan (Director, Cen- ernment agencies such as NSF, Semat- lege of Engineering and end at noon ter for Nanotechnology, NASA ech, SRC, DARPA, AFRL and ONR on Wednesday, June 28th. This year’s Ames Research Center) regularly participate with updates on Symposium will have two laboratory • Yoshio Nishi (Director, Stanford funding opportunities. Industry part- open houses. The first will be on Sun- Nanofabrication Facility) nerships with universities (often with day afternoon June 25 at 2:00 PM at government support) that open up new the Stanford Nanofabrication Facility The city of San Jose is located in opportunities for both education and (SNF) (http://snf.stanford.edu/). The Silicon Valley and is the home to research are frequently presented here. Second will be held on Monday many microelectronics companies The Electron Devices Society of the evening at 5:00 PM at San Jose State such as Intel, AMD, Applied Mater- IEEE is a technical co-sponsor of the University’s Microelectronics Process- ial, Novellus, Lam Research, UGIM symposia. ing Engineering Laboratory (MPEL). National Semiconductor, Linear This year’s host for the Symposium The open houses will consist of an Technology, Cadence Design Sys- is the College of Engineering of San informal discussion session for man- tems, Synopsys, Mentor Graphics, Jose State University. The College has agers and researchers from various Nvidia, Cisco, Atmel, Altera, and been listed among U.S. News & microelectronics laboratory facilities Cypress Semiconductor. Located in World Report’s top undergraduate followed by tours of SNF’s and Northern California, San Jose is the engineering programs in the U.S.A., SJSU’s facilities. The discussion will largest city in the San Francisco Bay since hosting the ASEE Frontiers in focus on issues such as funding, Area, third largest city in California, Education conference in the 1980’s. equipment acquisition, maintenance, and the 10th largest city in the Unit- The following quotes from two Silicon staff, operational expenses, process- ed States. San Jose is within one Valley leaders describe San Jose ing issues, industry interaction, collab- hour driving distance of downtown State’s role as a provider of engineer- orations with other universities, San Francisco and Santa Cruz ing talent to Silicon Valley. intellectual property and compatibility beaches and several hours driving problems. distance to Napa Valley and “San Jose State’s College of Engi- Papers will cover the following Yosemite National Park. It has one neering and Silicon Valley grew up technical areas: theme park, and one water park. together…the College helped Industry • New initiatives in university micro- For more information on the Sym- with job-ready graduates whose electronics programs, courses, lab- posium, please visit the symposium hands-on skills made Silicon Valley oratories, technology transfer, website at http://www.engr.sjsu.edu/ the high technology leader.” David industry interaction ugim06, or contact David Parent, Packard, Hewlett Packard • Government-University microelec- One Washington Square Hall, EE tronics research programs Department, SJSU, San Jose, CA, “San Jose State’s Engineering Col- • Microelectronic research projects 95192-0084 (E-mail: dparent@ lege has had a very positive influence in the areas of materials, simula- email.sjsu.edu). on the development of Silicon Valley. tion, design, processes, testing, Graduates of this Professional School and reliability David W. Parent have contributed to the development • Process equipment development, 2006 UGIM General Chair of Intel since Intel’s beginning in manufacturing, statistical process San Jose State University 1968.” Robert Noyce, Intel control and design of experiments San Jose, CA, USA

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2006 IEEE Symposium on VLSI Technology

(continued from page 1)

• Theories and fundamentals relat- Among other unique features Tel: +1 301 527 0900 ext. 103 ed to the above devices. that differentiate the Symposium Fax: +1 301 527 0994 • New concepts and technologies on VLSI Technology are its spirit E-mail: [email protected] for VLSI manufacturing. of international collaboration and emphasis on creating an informal Secretariat for VLSI Symposia In addition to the innovative techni- atmosphere where new ideas and (Japan) cal work presented at the confer- technology directions can be c/o ICS Convention Design, Inc. ence, a one-day short course on debated and discussed. The loca- Sumitomo Corp., Jinbocho Bldg. “Process Technologies for Continu- tion of the VLSI Symposium typi- 3-24, Kanda-Nishikicho, Chiyoda-ku ous Scaling” will be offered on the cally alternates between the Tokyo 101-8449, Japan day preceding the conference, United States and Japan, giving it Monday June 12th. This short a true international setting. More Tel: +81 3 3219 3541 course offers an excellent opportu- than 800 participants from around Fax: +81 3 3292 1811 nity for attendees to learn about the world attended the 2005 Tech- E-mail: [email protected] the latest advances in semiconduc- nology Symposium in scenic tor device and process technolo- Kyoto, Japan. We cordially invite you to gies from a series of tutorials The 2006 venue in Honolulu, attend the 2006 Symposium on presented by industry experts. Hawaii also offers many scenic and VLSI Technology to learn about Also preceding the conference is cultural attractions. Travel to the recent state-of-the-art advance- a satellite workshop on Silicon other surrounding Hawaiian ments in semiconductor technolo- Nanoelectronics, which will be held islands, each of which offers a gy and take advantage of the at the Hilton Hawaiian Village on unique setting and flavor, is also many opportunities for technical June 11-12. This workshop is spon- relatively easy. A luau banquet and cultural interactions offered sored by the Electron Devices Soci- hosted by the Symposium on Tues- by the Symposium. ety and covers all aspects of day night offers attendees an silicon-based nanoelectronics. For opportunity to further experience Robert Havemann further information visit the web- Polynesian food and culture. The Symposium Chairman site http://nano.nd.edu/si-nano. Hilton Hawaiian Village hotel, locat- Novellus Systems, Inc. One of the unique strengths of the ed on world-famous Waikiki Beach, San Jose, CA, USA VLSI Technology Symposium is its is a world-class facility that offers a association with the Symposium on wide range of recreational opportu- Shin’ichiro Kimura VLSI Circuits, which is held each year nities. The Hotel is easily accessi- at the same location during the same ble by taxi from nearby Honolulu Symposium Co-Chairman week. The 2006 Symposium on VLSI International Airport. Hitachi, Ltd. Circuits will also be held at the Hilton For further information, please Tokyo, Japan Hawaiian Village on June 15-17, with visit our conference web site at a circuits-related short course offered http://www.vlsisymposium.org, or Jason Woo on June 14. In addition, a joint contact the following conference Program Chairman “Rump Session” on a topic of inter- secretariats: UCLA est to both technologists and circuit Los Angeles, CA, USA designers will be held on the evening Secretariat for VLSI Symposia of Wednesday, June 14. This joint (USA) Tohru Mogami session will complement two addi- Widerkehr and Associates Program Co-Chairman tional rump sessions held the same 16220 S. Frederick Ave. evening on key issues of interest to Suite 312 NEC Corp. the VLSI technical community. Gaithersburg, MD 20877 USA Kanagawa, Japan

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Society News DecemberDecember 20052005 AdComAdCom MeetingMeeting SummarySummary

The 2005 Annual ommended minimum surplus of 20%. 11,219 members in 2005 holding meeting of the Moving to EDS, he shared his view on fairly steady from 11,494 in 2004. Of IEEE Electron progress EDS has made in the last these, 6,705 are regular members, Devices Society two years regarding service to mem- 3,700 are permanent members, 785 was called to bers, membership, and global promo- are students, and 29 remain affiliate order by Presi- tion of EDS activities. While significant members. The demographics are dent, Hiroshi Iwai, advancement has been made in these given below. on Sunday, 4 areas, at issue is the value of EDS John Lowell, reporting for December, at membership since many of the origi- Membership V-P, James Kuo, John K. Lowell the Washington, nal reasons, which centered on publi- exemplified that the committee con- D.C. Hilton pre- cations, have changed. Over the next tinues its promotions through credit ceding the IEDM Conference. couple years, EDS must adapt new ini- voucher programs at IEDM, member- tiatives to address membership ship distributions at EDS confer- Executive Reports issues, preservation of archive for the ences, promotion through the Given Debt of Gratitude certificates proceedings of EDS sponsored, co- Distinguished Lecturer Program, were elected members of AdCom, Cor sponsored, technical co-sponsored using chapter subsidies to pay for Claeys, James Dayton, Masao Fuku- conferences/workshops, involvement memberships and subscriptions, and ma, Mikael Ostling, Kwyro Lee, David from industry, improve publication reinstated both TIP mailings, and the Pulfrey, Ken Galloway (Meetings V-P), quality, and continue promotion Senior Member Program. For 2006, Steve Hillenius (Fellows Chair), Lucian worldwide. AdCom approved the following Kasprzak (Device Reliability Physics TC Treasurer, Juin Liou, reports changes in the Membership Fee Sub- Chair), and James Kuo (Membership that EDS finances have done well in sidy Program (MFSP): (1) EDS will V-P) who are leaving in 2005. Also 2005 but have not prospered as well now accept IEEE/EDS renewals, (2) receiving EDS Certificates were Hisayo as in the past due to lower confer- each member/student can only be Momose (EDS Newsletter Editor-NE ence income. He projected a $234K covered under this program once, Asia), Doug Verret (T-ED Editor-in- net surplus for the year with a fore- and (3) four of the 12 members/stu- Chief), Yuan Taur (EDL Editor-in-Chief), cast $136K net in 2006. [Note: all dents each year must be new Gady Golan (EDS Newsletter Editor- financial information within this IEEE/EDS members/students. Middle East/Africa), Adelmo Ortiz- report is in US$.] Reserves rose to Regions/Chapters V-P, Cor Conde (EDS Newsletter Editor-Latin $4,103K. Increased operating Claeys, listed five new EDS chapters America), and Werner Weber (adding expenses, and losses from publica- formed this year: AP/ED/MTT ESSDERC proceedings on Xplore). tions, T-DMR, and C&D Magazine Malaysia, C/COM/ED Universidad Awarded Years of Service certificates also took a toll on the final net. Cristobal Colon Student Branch, ED from the EDS Executive Office were Membership fees will stay fixed thru Xian, ED Universidad del Sol Student Laura Riello, Marlene James, Jo Ann 2007, but EDL and T-ED costs will be Branch, and ED Bahia. This brings the Marsh, Mariola Piatkiewicz and raised by $2. In 2007, the page count current number of worldwide chapters William Van Der Vort. for EDL will increase while that for to 120. Nineteen other chapters are in Hiroshi’s address focused on the T-ED remains fixed. the discussion stage for 2006. Cor results of the 2005 IEEE TAB meet- announced that ED/SSC Bangalore is ings. Approved by TAB were the IEEE V-P Reports EDS’ “Chapter-of-the-Year” in 2005. Computer Aided Design Council, and On the membership side, EDS had He also discussed a new appointment the Systems Council. He discussed the modified assignments of societies and councils to Divisions to equalize the size of each. For example, in Division I, CPMTS & LEOS have been reassigned and the Division now includes EDS, CASS, SSCS, ECAD Council and the Nanotechnology Council. Hiroshi reviewed the proposed TAB restruc- turing plans, and a new requirement for conferences to submit budgets to IEEE 9 months in advance with a rec- EDS Membership Demographics for 2005 (statistics as of 10/31/05)

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unbundling the journal in 2007 which will allow them to operate at a break- even level. Renuka reminded everyone that the EDS Archival Collection DVD is only available to EDS members, as a means to increase the value of EDS membership. In addition, there are plans for a pilot project to convert the IEDM short course videotapes to DVD to be sold on a member-preferential basis. A long-term plan to possibly Presiding over the 2005 EDS Administrative Committee (AdCom) Meeting in Washington, D.C., are archive the proceedings from twelve (left to right), William Van Der Vort, EDS Executive Director, Ilesanmi Adesida, EDS President-Elect fully supported conferences (other than and Hiroshi Iwai, EDS President. IEDM), and thirty-five technically sup- ported conferences is also being dis- policy and other guidelines to revive tronic, photonic, or organic, then it falls cussed. The Publications Committee the Chapters Partners program. Paul within the realm of EDS interests. In has been charged with deciding which Yu, Education V-P, gave statistics on addition, the confidentiality of paper of these meetings is interested, and the Distinguished Lecturer (DL) pro- reviews has been an issue this year. In appropriate. This year’s Paul Rappa- gram. Both the number of lecturers some instances, reviewer comments port and the George E. Smith awards (139) and the number of lectures given have been used for situations not relat- winners (see the October EDS Newslet- (142) have escalated from their 2004 ed to author feedback. While specifics ter for details) were given, and the levels. As stated above, activity with are confidential, Renuka assured that reviewer luncheon was also discussed. the EDS Videotape Lending Library any use of this material outside of the Renuka unveiled a new pilot project continues to decline. Plans are under- review process is assumed to be inap- tentatively called “Ask EDS”. The way to convert them to DVD, or donate propriate. On the financial side, the impetus for this effort came from the them to universities as the program is state of C&D Magazine remains an frequent questions from EDS members phased out. The EDS Graduate Student issue. In the 2006 budget, three soci- addressed to the EDL & T-ED editors. Fellowship Program had another suc- eties are due to be charged $40K, and Through the new program, a talent cessful year. This year’s winners were in 2007, both LEOS and CASS will be pool of technical committee members, Sun-Jung Kim (Natl. University, Singa- withdrawing sponsorship; and as a DLs, AdCom members, EDS members- pore), Tony Aik Sing Low (Natl. Univer- result EDS is projected to put in $65K at-large, and non-EDS experts would sity, Singapore), Elena Smotrova (Natl. by itself. The fact that Division I has be called upon to answer inquiries on Academy of Sciences, Ukraine), and changed, and is no longer represented various topics. The replies are intended Christopher Morris (Univ. of Washing- by the societies under which the origi- to be of a general nature with a liability ton). Funding and recognition for the nal magazine was formed is another disclaimer. Hiroshi approved $5K to DL program was also outlined. In con- factor. Renuka has been working fund this project for one year. clusion, Paul outlined a new EduCom behind the scenes to come up with a Jon Candelaria, General Chair GSF Award aimed at students who are financial model that would allow the of the 2005 IEDM, expects 1,500 starting graduate work at the Masters magazine to continue. Suggested for- attendees and 450 at the Short Cours- level. The plan is to recognize worthy mats are (1) an all-electronic journal es. The financials project an expected students at the onset of graduate similar to Transactions on Device and surplus of $79K. Hot topics for the ple- study, complimenting the original GSF Materials Reliability (T-DMR) or (2) a nary and panel sessions are the impact which targets established doctoral stu- Common Design Service model future scaling of CMOS, display tech- dents. Students would apply in their (where all issues will look the same). A nology, and non-volatile memories. senior year of undergraduate work to decision is due in early 2006 as to Meetings V-P, Ken Galloway got compete for one of five awards at $2K whether EDS will continue its sponsor- approval for all EDS repeat meetings each. Funding for the award received ship for 2007. Another publication with in 2007, and gave statistics on those AdCom approval. financial problems is T-DMR. For its for 2005. This past year EDS supported Renuka Jindal, Publications V-P, first four years of publication, T-DMR 25 financially sponsored meetings, 79 reported that paper circulation for EDL lost $257K, with EDS covering 50% of that were technically co-sponsored, & T-ED fell below 5,000 for the first the loss. The journal is expected to and none with cooperative support. time in twenty years. While this is not experience a surplus of about $44K in Meeting closing continues to be prob- alarming, as web-based circulation has 2005. In 2006, this is significantly lematic and cost EDS $2.5K this year. expanded, it is viewed in parallel with reduced, as the publication will receive Over the last five years, late closings the declining EDS membership base. less revenue than expected from the fees of $14.5K were charged to EDS. Discussion continues on the definition All Society Periodicals Packages Continuing the topic of meetings, of “nanotechnology” within EDS publi- (ASPP), due to the recent changes to Technical Activities V-P, Mark Law has cations. According to Renuka, if a the distribution algorithm. The Adviso- looked at meeting relevancy. The issue paper refers to a “device” be it, elec- ry Board is seriously considering here is that many meetings deal with a

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wide variety of topics making it diffi- cult to assign them to a specific techni- cal committee for guidance. Moreover, many meetings are “regional”, addressing themselves to attendees from a defined locale, and cover a broad range and not just one specific technical area, falling outside the EDS meeting mainstream. Interest in an “umbrella” meeting, wherein several small meetings could meet simultane- ously sharing the cost, has been mini- mal. Mark will try to get a larger meeting to cooperate. Chair Reports Award’s V-P, Al Mac Rae, present- ed his list of EDS members recog- EDS Recipients of National, IEEE, and EDS Awards for 2005 nized with major national, IEEE, and EDS awards in 2005. Summarized as has been busy with editor recommen- of sponsoring societies will be billed follows: dations for EDL, Transactions on Nan- for soft copy. Lu projects that 10% of With the Fellows report, Chair- otechnology (T-Nano) & T-ED. the 13,000 combined memberships of man, Steve Hillenius, stated that Optoelectronics TC Chair, Leda Lunar- EDS and the Reliability Society would from the 56 nominations EDS di reported on several tasks such as subscribe, giving them revenue of received, 11 EDS members were pro- identifying special issue topics and $25K. AdCom approved the new moted to Fellow grade. There were reviewing requests for sponsored financial structure. Pricing trade-offs also another 12 EDS members elected meetings. Their list of hot topics for with the co-sponsoring Reliability Fellow who were reviewed by other 2006 includes photonic circuits, sili- Society will be discussed in 2006. societies. EDL EIC Yuan Taur, reports con optoelectronics, free-space laser that EDL published 269 papers this communications, and multimode Publication Reports year, an increase of 8% over 2004. He fiber links. She also reviewed a pro- Reporting on T-ED, Editor-in-Chief, is planning to add a new Associate posed change in the agreement with Doug Verret, showed that the page Editor for molecular electronics. Divi- OSA on the Journal of Lightwave count for 2005 increased significant- sion I Director, Lew Terman, present- Technology (JLT). The new agree- ly due to the publication of two spe- ed on the state of the Division. ment gives all contributing societies cial issues. Speaking for T-DMR, the Highlights of his report focused on the an equal share of the costs and the EIC, Tony Oates, stated that the pub- key IEEE issues of membership, surplus instead of being OSA domi- lication has been holding a steady finances, and the TAB reorganization. nant. The new agreement received page count of about 730 pages for Current IEEE membership is flat and AdCom approval. Enrico Sangiorgi, the last two years. He is hoping for trends show a decrease of 2% yearly leader of the Technology Computer an increase in the near future. Its in the U.S., and a 5% increase else- Aided Design (TCAD) TC, discussed 2004 downloads on Xplore have where. At this rate, in fourteen years the preparation of a special, T-ED grown to the 70th percentile. Trans- the ratio of U.S. to non-U.S. member- issue. In other reports, Paul Yu actions on Semiconductor Manufac- ship will be 50-50. Society member- reviewed the status of EDS participa- turing (T-SM), according to Editor ship is also declining at a 5% per year tion in the IEEE Expert Now (formerly Duane Boning, is publishing around rate. IEEE reserves now stand at XELL) short course program. The 640 pages each year, and will move $140M. The TAB restructuring is dri- thrust is to offer 1-hour online learn- to IEEE Manuscript Central in 2006. It ven by several issues one involving ing modules available 24x7 offering has just finished its five-year IEEE the financial situation of the IEEE the latest information on emerging Periodical Review. Computer Society. In addition, TAB technology reported at IEEE confer- has become too big and unwieldy. ence tutorials. Lu Kasprzak outlined Newly Elected EDS Offices The Board of Directors plans to reduce the proposed financial changes for T- For 2006, your elected EDS officers the infrastructure charges allotted to DMR. Since the formula for distribut- are President, Ilesanmi Adesida, each society. They are also looking to ing ASPP funds has changed, the President-Elect, Cor Claeys, Trea- add member benefits by adding spe- publication needs additional revenue surer Juin Liou, and Secretary, cial search engines to Xplore. in 2007. It is seriously considering to John Lowell. Re-elected to a second unbundle itself, meaning in 2007, it AdCom term were Francisco Garcia Technical Committee (TC) will no longer be free. Subscriptions Sanchez (Universidad Simon Boli- & General Business Reports for soft copy, hard copy, CD and com- var, Caracas, Venezuela) and Juin Philip Wong’s Nanotechnology TC binations will be sold, and members Liou (Univ. of Central Florida). New-

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ly elected AdCom members include Jamal Deen (McMaster University, Ontario, Canada), James B. Kuo (National Taiwan University, Taipei), Giorgio Baccarani (Univer- sity of Bologna, Italy), Huiling Shang (IBM), Jacobus W. Swart (State University of Campinas, Brazil), and Sunit Tyagi (Intel). The next meeting of EDS AdCom will be on Sunday, June 4, 2006, in Naples, Italy.

John K. Lowell EDS Secretary Lowell Consulting Summary of EDS AdCom Actions – December 2005 Dallas, TX, USA

MESSAGE FROM THE EDS NEWSLETTER EDITOR-IN-CHIEF

I am writing this Zhirun Hu His main research interests are in message after a received his B. Eng high frequency device and circuit lapse of almost a in telecommunica- modelling, optimization, design, real- year. It is some- tion engineering ization and characterisation. He has times astonish- from Nanjing Uni- published 45 referred journal and con- ing to see how versity of Posts ference papers quickly the year and Telecommuni- His most important IEEE activities has gone by. As cations, Nanjing, include: (1) People to People Ambas- professionals, all China, in 1982, sador Programs Electron Devices Dele- Ninoslav D. of us are very Master in Business Administration, and gation to China led by Professor Cary Stojadinovic busy in our Ph.D. in electrical and electronic engi- Y. Yang in 2001, and (2) IEEE UK & RI work. I hope that neering from the Queen’s University of GOLD committee member. this issue comes at a very prosper- Belfast, United Kingdom, in 1988 and ous time in your career. 1991, respectively. Jacobus I would like to take this oppor- In 1991, he joined the Department of W. Swart tunity to thank three outgoing Electrical and Electronic Engineering, received the B. Regional Editors for outstanding University College of Swansea, as a Engineer and Dr. service to the Newsletter and Elec- senior research assistant in computa- Engineer Degrees tron Devices community. They are tional semiconductor device simula- in 1975 and 1981 Gady Golan (Region 8 - UK, Middle tion. In 1994, he rejoined the respectively, from East & Africa), Adelmo Ortiz- Department of Electrical and Electronic the Polytechnic Conde (Region 9 – Latin America) Engineering, the Queen’s University of School, University and Hisayo Sasaki Momose Belfast, as a research fellow in silicon of São Paulo, Brazil. Following, he (Region 10 – Northeast Asia). Their MMIC design, realization and charac- worked at: K. U. Leuven, Belgium, outstanding voluntary contribu- terization. In 1996, he joined GEC Mar- 1982-83; CTI, Campinas, 1984; LSI-Uni- tions for the past six years, as coni, as a microwave technologist versity of São Paulo, 1985-88; RTI, regional newsletter editors, are working on microwave/millimetre- USA, 1991, and The School of Electrical exemplary to the rest of us. wave device and circuit design and and Computer Engineering, State Uni- Replacing them on the Newsletter characterisation. He was a lecturer with versity of Campinas, since 1988; Editorial Staff are Zhirun Hu, the Department of Electronic Engineer- presently as Full Professor. Dr. Swart Jacobus W. Swart and Kazuo Tsut- ing, King’s College London from 1998 has published 40 papers in Journals sui, respectively, whose biogra- to 2003. He joined the Department of and 150 full papers in Proceedings of phies follow. It is my pleasure to Electrical and Electronic Engineering, Conferences. He has advised 32 Dr. welcome them as new editors for the University of Manchester, England, and MSc. degree students. He is a the EDS Newsletter. in January 2004. Senior Member of IEEE, member of

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ECS, SBMicro, SBMO and SBPC and joined the Dept. of Physical Electronics Applied Physics, and IEICE of Japan. has been president of SBMicro twice, (1986-1989) and Dept. of Applied Elec- He has been Secretary of the IEEE EDS 1988-90 and 1998-2000. tronics (1989-1992), Tokyo Institute of Japan Chapter since 2004. Technology as a Research Associate. Once again, I thank the outgoing Kazuo Tsutsui Since 1992, he has been Associate Pro- editors for their dedicated service to received the B.S., fessor of Interdisciplinary Graduate the Newsletter and welcome the new M.S, and Dr. of School of Science and Engineering, editors and wish them all success. Engineering Tokyo Institute of Technology. Current- Please contact your respective Region- degree from the ly, he is doing research on heteroepi- al Editor directly with news items. Dept. of Applied taxial growth of dissimilar materials on Electronics, Tokyo semiconductors, integration of quan- Ninoslav D. Stojadinovic Institute of Tech- tum effect devices, and process tech- EDS Newsletter Editor-in-Chief nology, Japan, in nologies for nano-CMOS. He is a University of Nis 1981, 1983 and 1986, respectively. He member of IEEE EDS, Japan Society of Serbia and Montenegro

EDS Educational Activities Committee Report

The objectives of versity of Bucharest, Romania); incremental cost to the travel plan. the Educational Arlene A. Santos (Department of Alternatively, a prior coincident trav- Activities Com- Defense, USA); Sunit Tyagi (Intel, el plan would not be required if the mittee are to pro- USA); and Philip Wong (Stanford lecturer is already located within an vide the forum University, USA). The committee approximate fifty mile radius of a and opportunities physically met during the spring EDS meeting site. Although the concept for members to Administrative Committee (AdCom) of the program is to have the lectur- expand their meeting in Madrid, Spain, and fall ers minimize travel costs by combin- knowledge of our AdCom meeting in Washington, D.C. ing their visits with planned business Paul K.L. Yu technical fields. Committee business was conducted trips, however EDS will assist in sub- The Committee mostly by electronic means between sidizing lecturers’ travel as needed. also seeks to provide opportunities the two meetings. At the past EDS AdCom Meeting for the Society to attract new mem- An important function of the Com- a few changes were approved in bers and to promote membership mittee is to maintain a vibrant Distin- regards to the EDS Distinguished and student activities. The Commit- guished Lecturer (DL) Program for Lecturer Program. The nomination tee’s membership strength in 2005 the Society. The DL Program exists and selection process of DLs will was sixteen, and its members were for the purpose of providing EDS now be approved twice a year at the appointed by the President to reflect chapters with a list of quality lectur- June and December AdCom Meet- the worldwide geographical spread ers who can give talks at local chap- ings. Also, each DL must now give 2 of the Society. The Vice President for ter meetings and other occasions. lecture talks within 2 years to remain Education who chaired the commit- The listing of Distinguished Lecturers as an active EDS DL. A certificate of tee was Paul Yu of the University of along with their topics and travel recognition will now be presented to California, San Diego, USA, and the schedules is maintained on the EDS the DLs who continue serving as a other members were K. S. Chari homepage. The listing is reviewed DL for 5 years. (Electronics Niketan, India); Jamal yearly and to remain on the roster, a In addition to the individual lec- Deen (McMaster University, Canada); Distinguished Lecturer must actively tures, there were seven mini-collo- Magali Estrada del Cueto (CINVES- perform lectures. The year 2005, quia conducted last year. The TAV-IPN, Mexico); Yoshiaki Hagiwara ended with a roster of 139 lecturers. mini-colloquia concept generally (Sony Corporation, Japan); Agis There were over 142 lectures con- involves sending about 2 or more Illiadis (University of Maryland, USA); ducted all over the world from Distinguished Lecturers to travel to a Kevin T. Kornegay (Cornell Universi- Belarus to Egypt to Seoul to the Unit- region/chapter and present the latest ty, USA); Kei-May Lau (Hong Kong ed States by well over half of our developments in a particular field. University of Science & Technology, Distinguished Lecturers. To arrange The chapters/regions would be Hong Kong); Juin Liou (University of for a lecture, EDS chapters are responsible for handling all the Central Florida, USA); Rebecca J. encouraged to contact lecturers arrangements of the event and only Nikolic (Lawrence Livermore Nat. directly. A general guideline for the minimal financial support would be Lab., USA); Stephen A. Parke (Boise visit, but not the absolute rule, is that required of EDS and could be cov- State University, USA); Jayasimha S. the lecturer should be able to include ered by the DL Program budget upon Prasad (Maxim Corporation, USA); the meeting site with an already request. The seven were held in Marcel D. Profirescu (Technical Uni- planned travel schedule at a small Hong Kong, Japan, Korea, Mexico,

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Singapore, Taiwan, and Boise, Idaho, the Newsletter. Advertisement for Expert Now (formerly XELL). This respectively. Several mini-colloquia the next competition with the quali- is a continuing education program are already being planned for 2006, fications required and the renumer- which seeks to deliver short cours- and reports on the DL Program are ations, are also published in this es over the web. This is an experi- presented frequently in this newslet- Newsletter and other EDS publica- mental program and EDS is one of ter. For more information, please tions. We are appealing to all our the societies assisting in validating contact Laura Riello of the EDS Exec- members to advertise the program this program. EDS is currently utive Office ([email protected]). Feed- among potential candidates and sponsoring four courses which backs are actively solicited on the nominators so that students are contain lectures by Yuan Taur, program from chapter chairs, lectur- aware of this opportunity for fund- Wayne Ellis, John Cressler, Curt ers, and members of the society. ing and recognition. With these Richter and Duncan Stewart. The Graduate Student Fellow- awards, we hope to assist the very Arlene Santos has agreed to be the ships Program (GSFP) for Ph.D. can- best students in our fields and also EDS Liaison to the EAB for the didates was established five years to make a positive impact on the IEEE Expert Now program. ago under the auspices of the Com- future leaders of our Society. Lastly, the committee is continu- mittee. For 2005, the Chair of the The EDS AdCom recently ously exploring ways and mecha- GSFP sub-committee was Stephen approved a new Masters level Grad- nisms of involving students and Parke. There were four awards uate Student Fellowship. This new gold members in conferences and made last year with the winners award is for graduating college other activities of the Society. If you being presented with their awards seniors to encourage them to go to have any suggestions or information at the IEDM in Washington D.C. The graduate school and reward their on these or any other activities that winners were Elena Smotrova of the undergraduate research work. We you may want us to engage in, National Academy of Sciences of are waiting for formal IEEE approval please contact me at [email protected]. Ukraine, Ukraine; Christopher J. which may take place at the June Morris of the University of Washing- 2006 IEEE Meeting Series. Paul K.L. Yu ton, U.S.A; and Sung Jung Kim and The Committee worked with the EDS Vice-President of Tony A. S. Low of the National Uni- IEEE Educational Activities Board Educational Activities versity of Singapore, the Republic of (EAB) on the new Educational University of California, Singapore. Reports on these win- Products Initiative that was San Diego ners are published in this issue of launched in 2003, entitled, IEEE San Diego, CA, USA

EDS NANOTECHNOLOGY COMMITTEE REPORT

The EDS Nan- assembly, molecular electronics, dates to Transactions on Nanotech- otechnology and other “nano” topics. They nology for possible replacement of Technical Com- come from a variety of back- 3 Editors in three major areas mittee serves as grounds (industry and academia) • Recommended a slate of candi- the technical and geographic locations (U.S., dates to EDL Editor-in-Chief for pos- resource for the Japan, Europe). sible addition to the editorial board Electron Devices Nanotechnology is a vibrant and in the molecular electronics area Society. We have fast growing field. We work on get- continued renew- ting EDS more involved in the nan- In the coming year, we will continue Philip Wong al of our commit- otechnology field. In the past year, to serve in the above areas. In addi- tee membership. we have been active in several tion, we will conduct a survey of key This year, the members are Mark activities in the service of EDS. nanotechnology conferences that Reed (Yale University), Karen Maex They include: EDS should be actively involved in. (IMEC), Edwin Kan (Cornell Univer- We are always looking for new sity), Joerg Appenzeller (IBM • reviewed several EDS meeting members and ideas for improve- Research), Kaustav Banerjee (Uni- sponsorship proposals. ment. Please contact the committee versity of California, Santa Bar- • Conducted a satisfaction survey chair, H.-S. Philip Wong, for sugges- bara), Toshiro Hiramoto (University of the IEEE Transactions on tions and ideas. of Tokyo), Hiroshi Iwai (Tokyo Insti- Nanotechnology Journal. tute of Technology), and H.-S. • Recommended a slate of candi- H.-S. Philip Wong Philip Wong (Stanford University). dates to T-ED Editor-in-Chief for EDS Nanotechnology The membership covers a broad possible replacement of Editor in Committee Chair range of expertise from nanoscale the nanotechnology area Stanford University CMOS, nanowire, nanotubes, self- • Recommended a slate of candi- Stanford, CA, USA

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EDS Photovoltaic Devices Committee Report

Observations on Photovoltaics in China 220 companies, about 100 of which cial Chinese Government policy came from China itself. that calls for 10% of total power If the nature of the The technical program reflected generation in China to be from 15th Photovoltaic China’s rapid rise up the learning renewable sources by 2020, with at Science and Engi- curve toward technical par with the least 1% guaranteed to be from PV neering Confer- three major PV communities, i.e. alone. The plan also calls for the ence (PVSEC-15) the United States, Europe and entire western part of China to be is any indication, Japan. The majority of papers were served by renewable energy the health of the on silicon solar cells of one material sources by the above date. PV industry in type or another (single crystalline While it is clear that China’s internal China is marching and polycrystalline Si, amorphous market is huge and a first priority, the Dennis J. Flood inexorably toward Si, microcrystalline Si, etc.), but Chinese PV industry also has taken aim world-class status. also included the full spectrum of at the world export market. Products The meeting, held in Shanghai, Octo- topics normally found at the other that were on display in the exhibits ber 10-14, 2005, is one of the largest conferences as well: fundamentals area were of sufficient quality to com- in the history of the Asian conference and novel devices; thin film solar pete effectively with suppliers from the series, and stands second only to the cells; compound semiconductor traditional “big three” producing areas World Conference on Photovoltaic solar cells; photovoltaic systems (Japan, Europe and the U.S.). Beyond Energy Conversion held in Osaka in (both building integrated and grid that, a cell and module manufacturing May 2003. (The World Conferences connected); module manufacturing equipment industry has emerged with- are joint meetings of the U.S. IEEE and field testing; and space solar in China and although its quality and Photovoltaic Specialists Conference, cells and systems as well as ses- capability could not be determined, it is the European Photovoltaic Solar sions on policy and economics reasonable to expect that lower cost Energy Conference and the Asian relating to photovoltaic energy con- Chinese equipment will enable lower Photovoltaic Science and Engineering version implementation and use. module prices in world markets for Conference and are held on an According to the Conference Chair, Chinese modules. Time will tell. approximate 4-year rotation among Professor Dinghuan Shi, President the three conference organizations.) of the Chinese Solar Energy Soci- Dennis J. Flood In addition to a technical program ety, the Chinese PV industry pro- EDS Photovoltaic Devices with nearly 700 presentations, the duction capacity rose from about Committee Chair Conference also included an industri- 100MW in 2004 to 250MW in 2005. North Coast Initiatives, Ltd. al exhibits area that was host to over This rapid growth is spurred by offi- Oberlin, OH, USA

2005 EDS J.J. Ebers Award Winner

The 2005 J.J. Iran. He received his B.S. degree in which offered sufficient system level Ebers Award, the Electrical Engineering from Sharif performance to displace bipolar tech- prestigious Elec- University of Technology, Tehran in nology in IBM mainframes and tron Devices Soci- 1977, and his M.S. and Ph.D. degrees enable new faster UNIX servers. Pre- ety award for in Electrical Engineering from Rens- viously, all high-speed computers outstanding tech- selaer Polytechnic Institute, Troy, NY, used bipolar or BiCMOS technology. nical contribu- in 1979 and 1984, respectively. He This 2.5V, 0.25 µm channel-length tions to electron then joined IBM Research Division, CMOS technology solved key device devices, was pre- Thomas J. Watson Research Center, scaling and technical problems to Bijan Davari sented to Dr. Bijan Yorktown Heights, NY, where he first integrate shallow-trench-isolation, Davari of IBM, worked on various aspects of scaled dual-doped poly gates, and abrupt Yorktown Heights, NY, at the Interna- CMOS and BiCMOS technologies, silicided source-drain junctions. This tional Electron Devices Meeting in under the tutelage of Bob Dennard work, which Bijan presented at the Washington, D.C., on December 5, and Tak Ning. 1988 IEDM, set the standard for per- 2005. This award recognizes Dr. Dr. Davari then became the techni- formance-optimized, low-power Davari “for contributions to deep- cal leader of the research and devel- CMOS and led to the adoption of submicron CMOS technology and opment effort leading to the first low-voltage standards in JEDEC and their impact on the IC industry.“ generation of high-performance, low- in the industry, which before that Bijan Davari was born in Tehran, voltage deep-submicron CMOS time was firmly on a 3.3-5V path.

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In the same period, Bijan and the In 1998 he became Vice President Bijan Davari has authored or co- IBM team demonstrated the first of Technology and Emerging Prod- authored over 70 publications in vari- shallow trench isolation process, ucts, leading IBM’s ous aspects of semiconductor devices which he named STI in his 1989 Semiconductor Research and and technology. He is an IEEE fellow, IEDM paper. He then installed this Development Center (SRDC) at and he was IEDM Device Technology process in manufacturing using Hopewell Junction, NY. Bijan and Committee Chairman and Short chemical-mechanical-polish pla- his team were responsible for the Course Chairman during 1990-1995. narization. This STI process was first definition and development of pio- Bijan and his wife Andrea live in used in IBM’s 0.5µm technology neering technologies such as cop- Mahopac, NY with their daughter node for both high-performance per interconnect, silicon on Danielle who is 15. Bijan enjoys CMOS logic and 16Mb DRAM, and is insulator (SOI) and high-perfor- swimming, cycling, and spending now used throughout the industry. mance logic based embedded time with his family. He is an avid fan In 1992, Dr. Davari was appointed DRAM (eDRAM). In 2003, he was of Pink Floyd, Rachmaninoff, Charles director of CMOS logic technology in named Vice President of Next Gen- Darwin and Omar Khayyam!! IBM Microelectronics Division where eration Computing Systems/Tech- he led the development of IBM’s nology. In this capacity, Dr. Davari Louis C. Parrillo technology nodes from 0.35 µm leads efforts for the definition and EDS J.J. Ebers Award Chair through 0.18 µm CMOS. Bijan was development of IBM’s future gener- Parrillo Consulting, LLC appointed an IBM Fellow in 1996. ation systems. Austin, TX, USA

2006 EDS J.J. EBERS AWARD CALL FOR NOMINATIONS

The IEEE Electron Devices Society invites the submission of nominations for the 2006 J.J. Ebers Award. This award is presented annually for outstanding technical contributions to electron devices. The recipient(s) is awarded a certificate and a check for $5,000, presented in December at the International Electron Devices Meeting (IEDM). Nomination forms can be requested from the EDS Executive Office (see contact information on page 2) or is avail- able on the web at www.ieee.org/eds/. The deadline for the submission of nominations for the 2006 award is 1 July.

2005 EDS Distinguished Service Award

The IEEE Electron The 2005 EDS Distinguished Service cal chemists as well as electron micro- Devices Society Award was presented to Cary Y. Yang scopists at Ames, he was able to model is extremely proud at the International Electron Devices and verify the five-fold (hence non-bulk) of the services Meeting in Washington, D.C., on symmetry of these particles. After a that it provides December 5, 2005. brief stay at Stanford University in the to its members. Cary Yang was born in China, in Stanford-NASA Ames Joint Institute on Its members gen- 1948. He first arrived in the United Surface and Microstructure Research, erate the premier States in 1967 and received the B.S., he founded Surface Analytic Research, new develop- M.S., and Ph.D. degrees in electrical Inc. in Mountain View, California, and Cary Y. Yang ments in the field engineering from the University of directed sponsored research in surface of electron devices Pennsylvania in 1970, 1971, and 1975, and nanostructure science. In 1983 he and share these results with their respectively. For his doctoral research, joined Santa Clara University and peers and the world at large by pub- he studied the electronic and optical founded the Microelectronics Laborato- lishing their papers in EDS journals properties of IV-VI narrow-gap semi- ry, for teaching and research on silicon- and presenting results in its meet- conductors. His postdoctoral work at based devices and circuits. He currently ings. This is a global activity that is M.I.T. introduced him to the field of holds the positions of Professor of Elec- effective because of the efforts of surface science, where he examined trical Engineering, Associate Dean of numerous volunteers. Many of these the detailed electronic structure of Engineering, and Director of the Center volunteers labor in relative obscurity, chemisorbed molecules on heavy tran- for Nanostructures. At present, he is with their only reward being the sat- sition metal surfaces. spending his sabbatical quarter as Visit- isfaction that they receive in being He joined NASA Ames Research ing Professor at the University of Cali- an important part of a successful Center in Moffett Field, California in fornia, San Diego. His current research organization, namely of the Electron 1976 and extended his chemisorption is on nanostructure interfaces and inter- Devices Society. They should be study to include surfaces of submicron connects in electronic and biological thanked. metal particles. Working with theoreti- systems.

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Over the past two decades, he has high school students and teachers, ment Award in Continuing Education initiated innovative programs to edu- as well as Silicon Valley technical “for extensive and innovative contri- cate and train technical professionals professionals. butions to the continuing education in various stages of their careers. In He has been a consultant to indus- of working professionals in the field the eighties, he developed and orga- try and government, and a visiting of micro/ nanoelectronics”. nized short courses on timely topics professor at Tokyo Institute of Tech- Cary resides in Cupertino, Califor- in silicon technology to Silicon Valley nology, University of Tsukuba, nia with his partner, Marie, a classi- professionals. In the mid-nineties, he National University of Singapore, cal singer. His elder daughter, Elaine, offered short courses on semiconduc- University of Pennsylvania, Universi- an aspiring impressionist painter, tor technology for SEMI as part of a ty of California, San Diego, and Uni- works as a technical recruiter in a Sil- retraining program for professionals versity of California, Berkeley. He was icon Valley semiconductor company. in other fields. Since the mid-eighties, elected Fellow of IEEE in 1999. He His younger daughter, Jocelyn, stud- he has provided opportunities for his served as an editor of the IEEE Trans- ies computer science and biology at students to spend extended periods actions on Electron Devices, in the the University of California, San in companies in Japan, where they area of MOS devices. In 2001, on Diego. He spends his spare time collaborated with their hosts on their behalf of People to People Ambas- playing tennis and hiking on various thesis research. More recently, he sadors Program, he led an Electron trails in Silicon Valley. founded the Center for Nanostruc- Devices Delegation to visit universi- tures at Santa Clara, which offers ties, government institutes, and com- H. Craig C. Casey, Jr. interdisciplinary research and edu- panies in the People’s Republic of EDS Distinguished cation opportunities in the field of China. In 2004, he was named the Service Award Chair nanoscience and nanotechnology recipient of the IEEE Educational Duke University for university students and faculty, Activities Board Meritorious Achieve- Durham, NC, USA

2006 Charles Stark Draper Prize

The National Academy of Engineering cameras in the consumer product Morton, then Vice President of the Elec- awarded the 2006 Charles Stark Drap- market-place. It goes without saying tronic Material and Components Area er Prize to Willard S. Boyle and George that a CCD is in billions of dollars of of Bell Telephone Laboratories asked E. Smith in recognition of their patent, product that are shipped every year. Bill Boyle, one of his Executive Direc- “Information Storage Devices”, tors, if there were an electrical ana- which describes the basic technolo- log to the magnetic bubble device, gy concept of Charge-Coupled where small magnetic domains, or Devices. The citation reads, “For the bubbles, were moved under the invention of the Charge-Coupled influence of a magnetic field. Device (CCD), a light sensitive com- Research on magnetic bubble mate- ponent that is at the heart of digital rials and their application to static cameras and other widely used memory and logic devices was imaging technologies.” The prize of actively pursued at Bell Labs at that $500,000 is shared by the recipients time. Bill Boyle went to George and is an annual award that honors Smith, then Head of the Imaging engineers whose accomplishments Device Department, and their brain- have significantly benefited society. storming session resulted in the CCDs are the key component in basic concept of the CCD. The appar- digital cameras and camcorders, ent simplicity of the CCD was appeal- fax machines and scanners, recon- PHOTO COURTESY OF LUCENT TECHNOLOGIES, BELL LABS ing. The Bell Labs organization naissance and weather forecasting William Boyle (left) and George Smith (right) supported and encouraged such satellites, space and terrestrial tele- demonstrating a TV camera that uses a CCD. innovation - and it thrived in this scopes, and miniature medical environment. Every new idea is the imaging devices. The digital output of George Smith is well known by IEEE product of its time and CCDs were no a CCD is readily processed to enhance Electron Devices Society members as exception. These were exciting times at images, capable of being transmitted the first and long time editor of the Bell Labs and the semiconductor insti- over great distances and stored for rapid publication; peer reviewed and tutions of the world. future use. Our easy ability to improve widely read “Electron Device Letters”. and manipulate images is a delightful Indeed, the EDS George E. Smith Alfred U. Mac Rae benefit of using digital cameras. Pho- Award is given annually for the best EDS Vice-President of Awards tographic film cameras are rapidly paper in this journal. Mac Rae Technologies being replaced by these CCD based As the story of the CCD goes, Jack Berkeley Heights, NJ, USA

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23 EDS Members Elected to the IEEE Grade of Fellow - Effective 1 January 2006

Muhammad Alam, Purdue Uni- Martin Giles, Intel Corporation, Goran Stemme, Royal Institute versity, West Lafayette, IN, USA Hillsboro, OR, USA of Technology, Stockholm, - for contributions to complemen- - for contributions to technology Sweden tary metal oxide semiconductors computer aided design (TCAD) - for contributions to micro elec- (CMOS) circuit reliability and com- modeling of processes and tro-mechanical systems (MEMS) putational models for electronics devices and optoelectronics Yu-Chong Tai, California Insti- Hideki Hayashi, Sumitomo tute of Technology, Pasadena, Jesus del Alamo, Massachusetts Electric Industries, Tokyo, Japan CA, USA Institute of Technology, - for contributions to and leader- - for contributions to integrated Cambridge, MA, USA ship in compound semiconductor nano/micro electro-mechanical - for contributions to device technologies systems (MEMS) and nano/micro- microelectronic devices fluidics for Lab-on-a-Chip applica- Larry Hornbeck, Texas Instru- tions Seshu Desu, University of ments DLP Products, Van Alstyne, Massachusetts-Amherst, TX, USA Katsuyoshi Washio, Central Amherst, MA, USA - for invention, development, and Research Laboratory, Hitachi, Ltd., - for contributions to development applications of the Digital Kokubunji, Tokyo, Japan of ferroelectric thin film devices Micromirror Device - for contributions to high-speed silicon and silicon germanium Andreas Andreou, Johns Hop- Qin (Alex) Huang, North Caroli- bipolar/Bi complementary kins University, Baltimore, na State University, Raleigh, metal oxide semiconductors MD, USA NC, USA (CMOS) device and circuit - for contributions to energy - for contributions to emitter turn- technologies efficient sensory microsystems off thyristor technology and its applications Werner Weber, Infineon Tech- Gary Bernstein, University of nologies, Munich, Germany Notre Dame, Notre Dame, Muhammad Khan, University of - for contributions to metal oxide IN, USA South Carolina, Columbia, semiconductors (MOS) device - for contributions to techniques SC, USA physics for fabricating nanoscale devices - for contributions to the develop- and circuits ment of III-nitride electronic sen- Burnell West, Credence Systems sor systems Corporation, San Jose, Steve Chung, National Chiao CA, USA Tung University, Hsinchu, Taiwan Mong-Song Liang, TSMC (Tai- - for contributions to high-perfor- - for contributions to reliability in wan Semiconductor Manufactur- mance automatic test equipment ultra-thin-oxide complementary ing Company, Ltd), Hsin Chu, metal oxide semiconductor Taiwan, ROC Gerald Witt, Air Force Office (CMOS) devices - for contributions to semiconduc- Scientific Research, Arlington, tor manufacturing technologies VA, USA Simon Deleonibus, CEA LETI, - for the promotion of research Grenoble Cedex 9, France Gary May, Georgia Institute of in compound semiconductor - for contributions to nanoscaled Technology, Atlanta, GA, USA devices complementary metal oxide - for contributions to semiconduc- semiconductor (CMOS) devices tor manufacturing and engineering Usha Varshney, National Sci- technology education ence Foundation, Arlington, VA, USA Hector De Los Santos, David Seiler, National Institute - for technical leadership in sensor NanoMEMS Research, LLC, of Standards and Technology, technologies and systems Irvine, CA, USA Gaithersburg, MD, USA - for contributions to radio fre- - for leadership in the develop- Steven J. Hillenius quency (RF) and microwave micro ment of critical metrology and 2005 EDS Fellows Chair electro-mechanical systems measurement science at the micro Agere Systems (MEMS) devices and applications and nano levels Allentown, PA, USA

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20052005 CLASSCLASS OFOF EDSEDS FELLOWSFELLOWS HONOREDHONORED ATAT IEDMIEDM

On December 5, 2005, at the Ple- nary session of the IEEE EDS International Electron Devices Meeting (IEDM) in Washington, D.C., the 2005 EDS President, Hiroshi Iwai, presented a num- ber of 2005 IEEE/EDS Fellows with certificates to congratulate them on being elected IEEE Fel- lows. Fourteen of the 40 EDS members elected to the IEEE grade of Fellow for 2005 attended EDS President, Hiroshi Iwai (bottom row, 2nd from right), along with 14 EDS members who the presentation. were elected IEEE Fellow for 2005 at the 2005 IEDM.

EDS MEMBERS NAMED WINNERS OF THE 2006 IEEE TECHNICAL FIELD AWARDS

Four EDS Members were among high-speed bipolar technology, With manufacturing he drove the winners of the 2006 IEEE Tech- including solutions to yield-limit- the creation of Motorola’s nical Field Awards. They are: ing mechanisms that became Research, Development and Manu- widely adopted. With Dr. Richard facturing complex known today as Louis C. Parrillo Payne and their colleagues, he the Dan Noble Center. This effort of Parrillo Con- developed the original and several enabled Motorola to independent- sulting, LLC., generations of “Twin-Tub CMOS” ly manufacture leading-edge Pow- Austin, Texas, technology which became an er-PC products and laid the won the 2006 industry standard for high-perfor- groundwork for several external IEEE Frederik mance CMOS. technology alliances. As a Corpo- Philips Award. In December, 1984 he joined rate Officer (1994) and Division His citation Motorola’s Advanced Products General Manager (1997) he drove states, “For lead- Research and Development Labo- the development of ultra-fast ership in advancing CMOS and ratory (APRDL) in Austin. In 1988 SRAM products that were the Bipolar technology through techni- he was appointed Vice President fastest, most compact and the first cal and managerial contributions”. and Director of APRDL, building it in the industry using copper-inter- Louis C. Parrillo received his to be an effective, internationally- connect technology. As Semicon- BSEE from the University of Con- recognized team. With TRW, the ductor’s Chief Technology Officer necticut and his MSEE, MA and team produced the world’s largest and Director of the DigitalDNA‰ Ph.D. degrees in Electrical Engi- and most advanced “Superchips” Labs (2001), he and his colleagues neering from Princeton University. (~1,500mm2 die size, 0.5um, drove the alliance among Motoro- He joined Bell Laboratories in triple-level-metal technology), la, ST Microelectronics, Philips Murray Hill, New Jersey (1972), successfully completing the US Semiconductor and TSMC for 300 where he and his colleagues devel- government’s CMOS VHSIC pro- mm research and development in oped AT&T’s first all-implanted, gram (1989). Crolles, France.

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After retiring from Motorola, he Currently, he is President & CEO of Susumu Namba established Parrillo Consulting, Semiconductor Business of Sam- of Nagasaki Insti- LLC (2004) to provide technical, sung Electronics and responsible tute of Applied managerial and business value to for research, development, manu- Science, Nagasa- diverse clients. facturing of all semiconductors, ki, Japan won He has 27 patents and over 40 OMS (Optical Media Solution) and the 2006 IEEE publications. He is an IEEE Fellow HDD (Hard Disk Drive) products. Cledo Brunetti (1989), a recipient of the Electron Dr. Hwang has been an IEEE Fel- Award. His cita- Devices Society (EDS) J.J. Ebers low since Feb. 2002. He has also tion states “For Award (with Dr. Richard Payne, served actively as a senior member contributions to ion-beam and 1992), a past President of EDS of the IEEE Electron Devices Society optical technologies for application (1996, 1997), a member of The and the Circuits and Systems Soci- to semiconductor devices, 1950 in United States National Academy of ety since 1992. He has served on communication engineering. Engineering (1996), and a recipient the Program Committees of Interna- Susumu Namba was born in of the EDS Distinguished Service tional Conference on VLSI and CAD February 1928 in Okayama, Japan. Award (2004). (ICVC), and International Workshop He graduated from the Osaka Uni- Dr. Parrillo and his wife Kath- on Statistical Modeling (IWSM), and versity in 1950 in communication leen reside in Austin. Their chil- International Electron Devices engineering. dren, Jeffrey and Lisa are students. Meeting (IEDM). He served as In 1950, Dr. Namba joined the His outside interests include track Chairman for Memory division of RIKEN, The Institute of Physical driving in High-Speed Drivers Edu- IEDM from 1994 to 1996, Technical and Chemical Research, where he cation events, photography and Program Chairman of 1997 ICVC, a was a research member in the hiking with his family in Colorado. guest editor of the IEEE Transac- semiconductor laboratory. In 1966 tions on Electron Devices in 1998. he became a chief scientist at Chang-Gyu He has also served on the Executive RIKEN. In 1967, he was also Hwang of Sam- Committees of VLSI Symposium appointed to the professor of elec- sung Electronics since 1998. trical engineering at the Osaka Co., Ltd, Gyeong- Dr. Hwang holds several inter- University. He started his research gi-Do, Korea, won national patents related to the with the photoelectric recording the 2006 IEEE semiconductor design and process interferometer-type gas analyzer Andrew S. Grove and authored and co-authored for which he received the Dr. Award. His cita- more than 50 technical papers in Engineering from the University tion states, “For international journals and confer- of Tokyo (1959), and in 1959 he contributions to the development of ences. And he was conferred a made the first experiment on the advanced memory products”. decoration of Gold Tower (Order light modulation with an electro- Dr. Chang-Gyu Hwang received of Industrial Service Merit) by The optic crystal for which he received the B.S. and M.S. degrees in elec- Patent Bureau of Korea and Korea the Dr. Science from Kyoto Uni- trical engineering from Seoul Invention Promotion Association versity (1962). In 1969, he made National University in 1976 and (May 19th, 2004). He also received the first ion implantation machine 1978, respectively, and the Ph.D. Grand Prize of Samsung Technolo- in Japan, and established a scien- degree in electrical and computer gy Award (1994), Samsung Special tific basis of the ion implantation engineering from the University of Prize for Developing the World 1st in semiconductors. In 1986, he Massachusetts in 1985. 256M DRAM (1994), the ISI Cita- became a director of the Frontier From 1978 to 1981, Dr. Hwang tion Classic Award (2000), ISSCC Material Group in RIKEN, and cur- served as a faculty member in the Takuo Sugano Outstanding Paper rently he is a professor emeritus Korea Naval Academy. From 1985 Award (2002), and EIA Leadership both of the Osaka Univ. and the to 1989, he was a Research Associ- in Technology and Innovation Nagasaki Institute of Applied Sci- ate in the Integrated Circuit Labo- Award(2005). ence, and the Honorary scientist ratory at Stanford University. He Dr. Hwang has lectured on the of RIKEN. also served as a consultant of topics such as market, technology, Dr. Namba has pioneered vari- Hewlett Packard from 1986 to 1987 driving force, and future trend of ous microfabrication techniques and held a consulting staff position DRAM and Semiconductor Industry applied for semiconductor in the TCAD Department of Intel in Harvard University, Cambridge devices. These include the devel- Corporation from 1988 to 1989. University, Stanford University, opment of the electron and laser In 1989, Dr. Hwang joined the U.C. Berkeley, MIT, Seoul National microfabrication machines, et al. Semiconductor Business, Samsung University and some other world but, the most remarkable achieve- Electronics Co., Ltd. as Director of renowned universities and technol- ment is the Japanese first devel- device technology development. ogy institutions. opment of the ion implantation

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machine in 1969, and the develop- Springs in 1982. He has focused ment of the ion etching technique his research in areas such as Congratulations that enabled the submicron pro- device modeling, integration and to thethe EDSEDS cessing and was industrially novel materials for non-volatile applied for the fabrication of the memories. His initial research was Members Recently diffraction grating. He has also in high-K materials for GaAs Elected to IEEE made pioneering works on the MMICs which received acceptance excimer laser lithography and syn- in the market with over 500 mil- SeniorSenior MemberMember chrotron lithography. Besides, he lion devices. His involvement with Grade!Grade! has developed the focused ion Ferroelectric nonvolatile memo- beam system and the nanometer ries led to the discovery of high electron beam lithography system. endurance materials from which Anant Agarwal Sung Kim Many of the above technologies he nonvolatile FeRAMs of over 100 Egor Alekseev Young Pil Kim* developed have been introduced billion erase/write cycles can be Simone Bell Tsunenobu Kimoto* in the semiconductor device pro- made. Over 100 million of such Benjamin Blalock Lixia Li cessing in industries. devices have already entered the Sudhakar Bobba* Yo Lin Dr. Namba is a Fellow of the market using these novel materi- Tarik Bourouina Sailesh Merchant IEEE and OSA, and an Emeritus als based on bismuth compounds. Walter Braddock* James M. Mikkelson Member of the Japan Society of Most of Dr. Paz de Araujo’s Richard Burell Jawad Nasrullah* Applied Physics (JSAP). He has research in this area has been Kristy A. Campbell Susumu Noda* received a number of awards, across national boundaries involv- Sung-hoon Choa Kunal Parekh partly including the Ichimura Prize ing many engineers especially Ronald Coutu* Gerd Pfeiffer in Industry (1973); the Electro- from Matsushita Corporation of Paul C. Davis Arvind Raghavan chemical Society Award (1982); Osaka, Japan. Karen Deng David A. Rivkin the Ohkochi Memorial Award Dr. Paz de Araujo is the author Patrick G. Drennan* Andre Sayles (1983); and the JSAP Outstanding or co-author of 286 papers and 146 Daniel C. Diana James Schlaffer Achievement Award (2004). U.S. Patents. He has received a William Evans Anna Sigurdardottir number of awards including the Barton Gordon Renate Sitte Carlos A. Paz de American Electronics Association Arthur H. Greenberg John Stankus Araujo of the Outstanding Educator/Researcher Wilfried Haensch Daisuke Ueda* University of Col- of the Year, the IEEE Outstanding Luther P. Hendrix Ryan Umstattd orado, Colorado Branch Counselor, and the Lifetime Gregg Higashi Eric Vogel Springs, CO, won Achievement Award of the Interna- Archie Holmes Katalin Voros the 2006 IEEE tional Symposium on Integrated Yue-ming Hsin* Robert M. Weikle Daniel E. Noble Ferroelectrics. Jin-Biao Huang R. Clive Woods Award. His cita- Dr. Paz de Araujo and his wife, Robert Huang Weize Xiong tion states, “For Maureen, reside in Colorado Daniel Kadosh Kenji Yonei* fundamental contributions and Springs, Colorado. They have Chang-Soo Kim Chen-Hua Yu* commercialization in the field of three children, Mara, Alyssa and Ferroelectric Random Access Mem- Daniel. His outside interests * = Individual designated EDS as ory (FeRAM).” include philosophy, theology, nominating entity Dr. Carlos A. Paz de Araujo was traveling, and bridging areas If you have been in professional practice for 10 years, you may be eli- born on the 9th of December, 1952, between theory and applications gible for Senior Membership, the in Electrical Engineering in which in Natal, RN, Brazil. He obtained a highest grade of membership for B.S.E.E., a M.S.E.E., and a Ph.D. industry and academia can coop- which an individual can apply. New from The University of Notre erate and innovate at a fundamen- senior members receive a wood and Dame, Indiana, in 1977, 1979, and tal level. bronze plaque and a credit certificate 1982 respectively. for up to US $25 for a new IEEE soci- Dr. Paz de Araujo joined the Alfred U. Mac Rae ety membership. Upon request, a let- Department of Electrical and Com- EDS Vice-President of Awards ter will be sent to employers, puter Engineering at the Universi- Mac Rae Technologies recognizing this new status. ty of Colorado at Colorado Berkeley Heights, NJ, USA For more information on senior member status, visit http:// www.ieee.org/membership/ grades_cats.html#SENIORMEM. To apply for senior member status, fill out an application at http:// www.ieee.org/organizations/rab/m d/smelev.htm.

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Final Call For Nominations - 20062006 IEEEIEEE ElectronElectron DevicesDevices SocietySociety GraduateGraduate StudentStudent FellowshipFellowship

Description: One year fellowships awarded to promote, recognize, and support graduate level study and research within the Electron Devices Society’s field of interest: The field of interest for EDS is all aspects of the physics, engineering, theory and phenomena of electron and ion devices such as elemental and compound semi- conductor devices, organic and other emerging materials based devices, quantum effect devices, optical devices, displays and imaging devices, photovoltaics, solid-state sensors and actuators, solid-state power devices, high frequency devices, micromechanics, tubes and other vacuum devices. The society is concerned with research, development, design, and manufacture related to the materials, pro- cessing, technology, and applications of such devices, and the scientific, technical and other activities that con- tribute to the advancement of this field. At least one fellowship will be awarded to students in each of the following geographical regions every year: Americas, Europe/Middle East/Africa, and Asia & Pacific.

Prize: US$7,000 to the student and a travel subsidy of up to US$3,000 to each recipient to attend the IEDM for presentation of award plaque. The EDS Newsletter will feature articles about the EDS Graduate Fellows and their work over the course of the next year.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be pursuing a doctorate degree within the EDS field of interest on a full-time basis; and continue his/her studies at the current institution with the same faculty advisor for twelve months after receipt of award. Sponsor must be an IEEE EDS member. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform independent research in the fields of electron devices and a proven history of academic excellence.

Nomination Package: • Nominating letter by an EDS member • Two-page (maximum) statement by the student describing his or her education and research interests and accomplishments • One-page biographical sketch of the student (including student’s mailing address and email address) • One copy of the student’s under-graduate and graduate transcripts/grades. Please provide an explanation of the grading system if different from the A-F format. • Two letters of recommendation from individuals familiar with the student’s research and educational cre- dentials. Letters of recommendation can not be from the nominator.

Timetable: • Nomination packages are due at the EDS Executive Office no later than May 15, 2006 • Recipients will be notified by July 15, 2006 • Monetary awards will be given by August 15, 2006 • Formal presentation of the awards will take place at the IEDM Awards Ceremony in December 2006. • Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to: For more information contact: IEEE Operations Center [email protected] EDS Executive Office or visit: http://www.ieee.org/society/eds/education/ EDS Graduate Student Fellowship Program fellowship.xml 445 Hoes Lane, Piscataway, NJ 08854 USA

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EDS Regions 1-3 & 7 Chapters Meeting Summary

The Electron Devices Society Next, Fernando Guarin, Chap- by members in attending chapter (EDS) Regions 1-3 & 7 Chapters ter Chair, reported the goals and meetings due to a lot of traffic and Meeting was held on Sunday, activities of the ED Mid-Hudson industry’s spread over large areas December 4, 2005, in the Wash- Chapter. The goals of the chapter of the Chapter. He relayed the ington Hilton, Washington, D.C. are to: provide professional and Chapter’s successful launch of Ayman Shibib, Chairman of the social networking, provide support their own web site. He also tried Sub-Committee on Regions/Chap- to local student chapters, increase the IEEE e-Notice service where ters – North America East (SRC- membership among professionals meeting notices are distributed to NAE), welcomed the 21 attendees. and students, and to establish members by email. He also He stated the goals of the meet- reported that many chapter meet- ing, which occurs biannually, as: ings were co-sponsored with the 1) to share the experiences and Atlantic Nano Forum. best practices among the ED Next, Paul Berger, ED/LEO chapters in the four regions of Columbus Chapter Chair, present- IEEE, extending from Eastern U.S. ed the Chapter’s activities in the to all of Canada, 2) to explore mid Ohio area. Most of the Sec- ways of supporting chapter activi- tion meetings were held at Ohio ties by thinking out-of-the-box State University with student and about ways to involve more mem- alumni participation in attending bers into chapter activities. From left to right: Murty Polavarapu, Vice- and speaking. The sharing of information Chairman, SRC-NAE; Hiroshi Iwai, EDS President; Tony Ivanov, ED/LEO Central among chapters focused primarily Ayman Shibib, Chairman SRC-NAE; Cor Claeys, North Carolina Chapter Chair, on Chapter Chairs’ reports on Vice-President Regions and Chapters Committee reported on the activities of this their activities for the past year. and EDS President-Elect; Juin Liou, Vice-Chairman joint chapter established in Ayman introduced the first chap- SRC-NAE; at the IEEE EDS SRC-NAE meeting at 2004/2005 with members affiliated ter presentation from the ED/SSC the Washington Hilton, December 4, 2005.. with several industries in the area. Bangalore Chapter, India, selected Tony expressed the challenges as the winner of the EDS Chapter relations with the community. faced by many chapters in bring- of the Year Award. P.R. Suresh, Their activities included; several ing more value to their member- Chapter Chair, was congratulated technical talks with participation ship. He drew on many resources for receiving the award, and he from remote locations, a camp to available to chapters such as the presented a summary of the activ- introduce student to engineering, DL program and the ability of ities of his chapter. The activities support of Engineer’s Day at local chapters to request funding from had a good balance among sever- schools, a tour of IBM fabrication ED, MTT and SSC societies. He set al types; Distinguished Lectures facility and use of EDS videotape forth a goal of having at least ten (DL), technical presentations and library for focused seminars. meetings in 2006 at about the rate a workshop. In addition, the Chap- Vijay Arora, Chapter Chair for of one meeting a month, except ter supported student activities the ED Lehigh Valley, commented for July and December. and local involvement with the on the effect of industry’s moving Dev Palmer, AP/CPMT/MTT/ED community by arranging industry or reducing its industrial base in (ACME) Eastern North Carolina tours. Suresh mentioned the sup- an area on the chapter’s activities. Chapter Chair, presented the port from local industry in partici- He mentioned that the Lehigh Val- activities of the chapter in 2004- pating with the Chapter’s ley had many chapter activities in 2005. Technical meetings were activities. the past, but with downsizing and rotated among the four societies Durga Misra, Vice Chapter closing of some manufacturing focusing on each of the society’s Chair, presented the activities of sites, the chapter lost many of its interest and were held jointly with the ED/CAS North Jersey Chapter. activities. Despite this, some start the student chapters at the work The activities involved eight tech- up activities supported by the facility of the meeting organizer or nical talks and a software training State of Pennsylvannia and chapter members. session for university students. He Lehigh University may spur some Ravi Todi, Chapter Chair of the mentioned that their Chapter does activities next year. Orlando ED/CPMT Chapter, not usually charge fees for techni- Murty Polavarapu, Chapter described the variety of activities cal courses to members, except Chair of ED Washington and supported by the chapter. The when the Chapter incures some Northern Virginia, expressed activities included nine talks from speaker fees. some of the difficulty experienced academia, five talks from industry

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and two EDS video library presen- and discussions. Among the the chapter chairs to look for cre- tations. He also discussed plans to issues discussed was chapter ative ways to increase their activi- hold several talks in 2006 and to funding and support of activities ty levels with low cost such as sponsor a colloquim on devices on a limited budget. Ayman point- using the DL program, IEEE web and materials. ed out that the SRC-NAE has conferencing and sending meet- The last technical presentation responded positively to all the ing announcements to members was given by Colombo Bolognesi, chapter requests for funding and using IEEE e-Notice. Ayman then representing the ED Vancouver in some cases worked with the DL thanked all the attendees and pre- Chapter. Their activities included program to support the requests. senters and closed the meeting. two DL lectures and four other Also, another possible source for invited talks. Seven more talks are support could be the local IEEE M. Ayman Shibib already scheduled for 2006. section, especially if a chapter’s EDS Chairman SRC-NAE After the presentations, Ayman meetings are coordinated with the International Rectifier opened the meeting for questions Section. Ayman also encouraged El Segundo, CA, USA

2005 EDS Chapter of the Year Award

The EDS Chapter of the Year Indian Silicon Valley, there is a There is also a strong incentive to Award is presented annually to strong industrial involvement in organize joint activities with other recognize an EDS chapter for the the chapter’s activities as reflect- chapters in the region. quality and quantity of the activi- ed in the composition of the chap- ties and programs implemented ter’s Executive Committee. Cor L. Claeys during the prior July-June period. Technical seminars are organized EDS Vice-President of On December 5, 2005, at the on a regular basis and a few times Regions/Chapters IEDM held in Washington, D.C., a year Distinguished Lecturers are IMEC the ED/SSC Bangalore Chapter invited to give a presentation. Leuven, Belgium received the EDS Chapter of the Year Award, which includes a cer- tificate and check for $1,000. The award was received by the Chap- ter Chair, P.R. Suresh, Texas Instruments India Ltd. The Chapter, formed in 2001, has been very active to stimulate the growth of the Society and to increase the membership value. Over the last 4 years the EDS membership increased from 50 to 125. The strong mentorship of the students results in the formation of the first EDS student chapter in India. Different workshops have been organized, which are highly appreciated by both professionals and students and therefore also The Chair of the ED/SSC Bangalore Chapter, P.R. Suresh, accepting the 2005 EDS Chapter of well attended. In the so-called the Year Award from EDS President, Hiroshi Iwai.

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RegionalRegional andand ChapterChapter NewsNews

USA, CANADA & November 14 and 15, 2005. There of miniaturization; by Dr. Carlos LATIN AMERICA were a total of seven invited speakers, I. Z. Mammana (Head of Renato LATIN AMERICA three were provided by other chap- Archer Research Center) (Regions ters, and two invited talks were pro- • June 06: The evolution from micro vided by the Electron Devices Puebla to nano electronics; by Prof. Dr. 1-6, 7 & 9) Chapter. EDS Member, Dr. Rodolfo José A. Diniz (School of Electrical Quintero Romo from the Department Engineering/Unicamp) IEEE World Conference of Electric Engineering and Solid State • June 20: Microsystems; Can I have on Photovoltaic Energy – CINVESTAV in Mexico, presented my own enterprise?; by Prof. Dr. Conversion (WCPEC-4) the talk entitled “Electronic Simula- Luís Otávio S. Ferreira (School of - by Jeffrey L. Gray tion: Electric transport in devices”. Mechanical Engineering/Unicamp) The 4th IEEE World Conference on EDS Distinguished Lecturer, Prof. • August 08: Introduction to Photovoltaic Energy Conversion Jacobus Swart from the CCS and optoelectronics; by Prof. Dr. (WCPEC-4) will be held May 7-12, 2006, FEEC – UNICAMP in Brazil, gave his Newton C. Frateschi (Physics at the Hilton Waikoloa Village in talk titled, “History of Microelectronics Institute/Unicamp) Waikoloa, Hawaii, which was also the in Brazil and Recent Activities” The • August 29: Biomedical engineer- location of the 1st World Conference lectures were attended by several ing; by Prof. Dr. José Wilson M. on Photovoltaic Energy Conversion in members and students of the IEEE in Bassani (School of Electrical Engi- December 1994. The world’s leaders in Puebla. This event was the second neering/Unicamp) photovoltaics will be attending and technical activity for the ED Puebla • September 09: Carbon nanotubes; presenting the latest information on Chapter since it was formed in August by Prof. Dr. Stanislav A. Moshkalyov photovoltaic research and applications. 2004. All members of the ED Puebla (Center for Semiconductor Compo- More information regarding this excit- Chapter are grateful to the invited nents/Unicamp) ing conference can be found at speakers for their participation in this • November 11: Nanotechnology: http://www.wcpec.org. important event. fundamentals, opportunities and The conference, hosted by the IEEE challenges; by Prof. Dr. Osvaldo PVSC and sponsored by the IEEE Elec- ED UNICAMP Student Branch Alves (Chemistry Institute/Unicamp) tron Devices Society, is a joint confer- - by Ricardo Cotrin ence of the 32nd IEEE PVSC, the The lectures had an average atten- European PVSEC, and the 16th dance of 30 people among graduate Asia/Pacific PVSEC. The conference co- and undergraduate students, profes- chairs are Sheila Bailey of the NASA sors and researchers and a certificate Glenn Research Center in Cleveland, was given for those who attended 5 or Ohio, Makoto Konagai of the Tokyo more presentations. Institute of Technology, Japan, and ~ Jacobus W. Swart, Editor Heinz Ossenbrink of the European Commission DG JRC in Ispra, Italy. EUROPE,EUROPE, MIDDLEMIDDLE Papers will be presented not only in EASTEAST && AFRICAAFRICA the traditional areas of photovoltaics- crystalline silicon, amorphous and Lectures on Micro/Nano Fabrication at the (REGION(REGION 8)8) nano/microcrystalline silicon, CIGS, University of Campinas CdTe and III-V materials - but also in ED Germany fundamentals and new materials, mod- On November 11th, the Student Chap- - by Holger Vogt ules and system development, concen- ter of EDS at UNICAMP held the last of Starting January 2006, Holger Vogt will trators, space applications and national a series of lectures about micro/nano chair the ED German Chapter. He has programs and policies. technology. The “Lectures on many years of experience with silicon ~ Sunit Tyagi, Editor Micro/Nano Fabrication” were held at based semiconductor processing and the University of Campinas (Brazil) by device development. ED Puebla invited speakers from our university In 2005 an extended chapter - by Claudia Reyes Betanzo and labs nearby and has the main goal meeting was organized to assemble The technical chapters of the IEEE to diffuse the research about this sub- members from the many research Puebla Section organized a series of ject and to promote the knowledge fields and to discuss new visions and lectures to celebrate the 5th anniver- among undergraduate students. From missions of IEEE EDS in Germany. sary of the Section. The lectures were May to November 2005, the following Combining or even merging electri- carried out at the University of the lectures were delivered: cal/electronic, mechanical and opto- Americas (UDLA) in Puebla City on • May 23: Methodological aspects electronic/photonic functions in the

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micro and nano scale, top down and Abstract: ED Poland bottom up, offers potential for appli- Electrical, optical, and mechanical - by Andrzej Napieralski cation in future high performance properties of thin films significant- The ED Poland Chapter is a co-organiz- systems, and shall be considered in ly differ from those of bulk materi- er of the International Conference ED chapter activities. A newsletter als. Also, these properties are very MIXDES 2006, which will be held on distributed to all German EDS mem- influenced on the technological June 22–24, 2006, in Gdynia, Poland. bers summarized the main topics. parameters of the films deposition. During the conference two special ses- In 2006, a workshop on Therefore, characterization meth- sions are planned: ‘Advanced Electron Devices’ shall ods for evaluation of thin film - “Compact Models - The Heart of provide a forum to continue the dis- properties become highly impor- Mixed-Signal Design Flow” orga- cussions. It will take place at Duis- tant. A novel approach to the well nized by Prof. Hiroshi Iwai (Tokyo burg, June 13-14, at Fraunhofer IMS. known “Hot-Probe” method is pro- Institute of Technology, JAPAN) and The workshop will offer an informal posed and applied in our work. Dr. Wladyslaw Grabinski (Freescale, atmosphere to exchange recent The conventional Hot Probe char- Switzerland) research results and bridge the gap acterization method enables only - “Coordinated Accelerator between novel nano concepts and the definition of a semiconductor Research in Europe Project” the silicon world. We especially type, P or N, by identifying the organized by Mariusz Grecki (Tech- encourage students to report on majority charged carriers. Accord- nical University of Lodz, Poland) and their actual work in progress. Fur- ing to the new Hot Probe tech- Stefan Simrock (DESY, Germany) ther information is available from nique, one can measure and [email protected]. calculate the impurities concentra- For the opening plenary session the tion and charged carriers dynamic following presentations are planned: SAFE Workshop parameters. Feasibility proof the - “Physical Models for Smart- - by Helga Varwijk upgraded Hot Probe method was Power Devices” - Massimo Rudan On November 17-18, 2005, the Dutch done in Si and Ge bulk, and in thin (University of Bologna, ITALY) Technology Foundation organized two film semiconductor samples. - “Silicon Carbide Devices and parallel workshops in Veldhoven, The Chairman of the meeting: Professor Processes - Present Status and Netherlands, co-sponsored by IEEE Gady Golan. Seventy people, students Future Perspective” - Mikael EDS. The SAFE (semiconductor and academic staff, attended the meet- Östling (Royal Institute of Technolo- advances for future electronics and ing at HAIT. gy, SWEDEN) sensors) Workshop, focused on RF On Thursday, January 5, 2006, at - “The New Generation of the devices and modeling, devices charac- the Holon Institute of Technology Photoelectric Measurement terization and technology and materi- (HAIT), Holon, Israel. Methods of MOS Structure als related topics. This year’s workshop Lecturer: Dr. Boris Axelrod, Staff mem- Parameters” - Henryk M. dedicated special attention to the parti- ber at HAIT, Israel. Przewlocki (Institute of Electron cle detection and medical applications. Subject of meeting: “A Cascade Boost- Technology, POLAND) In total, there were 10 oral and 43 Converter - Inverter with Optimized - “TUNNETT Diode Oscillators poster presentations. In parallel, the Output Waveform” for mm-Wave Wideband Com- more systems oriented workshop on Abstract: munication and for Terahertz circuits, systems and signal processing Two structures, a switched-capaci- Electronics” - Piotr Plotka (Semi- took place. For this workshop, 10 oral tor-boost converter and a two-level conductor Research Institute, and 111 posters were presented. A inverter, are connected in cascade. JAPAN) combined evening session entitled, As a result, a staircase waveform of “Giga sensors for atto objects” dealt the output voltage is provided. During the conference a meeting of the with the new challenges for the next Such a multilevel waveform is Poland Section of the IEEE ED Poland generation particle detectors at CERN close to a sinusoid; its harmonics Chapter and Microelectronics Section (Geneva). The combined number of content can be reduced by multi- of Electronics and Telecommunication attendees was 225. plying the stage number as well as Committee of the Polish Academy of ~Cora Salm, Editor by optimization of stage duration. Sciences will take place. More informa- A Fourier analysis of the output tion about the conference can be found ED Israel waveform is performed. The design at the web site http://www.mixdes.org. - Gady Golan is optimized for minimizing factor ~ Andrzej Napieralski, Editor On Thursday, November 24, 2005, at THD. Simulations and experiments the Holon Institute of Technology on two prototypes confirm the the- ED/MTT/CPMT/COM/SSC (HAIT), Holon, Israel. oretical analysis. Novosibirsk Lecturer: Dr. Alex Axelevich, Staff Chairman of the meeting: Professor - by Viatcheslav P. Shuvalov member at HAIT, Israel. Gady Golan. Sixty people, students The fifth IEEE Russia Conference on Subject of meeting: “Hot-Probe and academic staff, attended the meet- Microwave Electronics: Measure- Method for Evaluation of Impurities ing at HAIT. ment, Identification, Application Concentration in Semiconductors” ~ Zhirun Hu, Editor (MEMIA’2005) was successfully held

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spite of ‘pure Siberian’ weather (very Devices Workshop was successfully cold and windy with temperatures 27 held at the Osaka University degrees below zero). We hope, having Nakanoshima Center, Osaka, Japan, visitors even with these extreme con- on October 26, 2005. The Workshop ditions, will help to attract the inter- was sponsored by the ED Kansai ests of many other potential foreign Chapter and the Graduate School of participants. Engineering, Osaka University, which offered a good opportunity for stu- AP/ED/MTT/COM/EMC Tomsk dents and researchers in the Kansai - by Oleg V. Stukach area to touch the up-to-date world- class researches and developments. Invited lecturers of the 2006 MEMIA plenary Eleven papers about silicon and com- meeting (NSTU, Novosibirsk, December 12, 2005) pound semiconductor device tech- nologies were selected for the at Novosibirsk State Technical Univer- presentation. The Award Committee sity December 12-15, 2005. This con- selected three papers for the 5th MFSK ference is one of the main events of (Message From Spirited Kansai) 2005 for our chapter. Due to great Award. The winners were Prof. international support from the IEEE Tsunenobu Kimoto for his paper enti- MTT Society, as well as the Harbin tled “Design and Fabrication of Institute of Technology (Harbin, Chi- Participants of the 2005 SIBCON conference RESURF MOSFETs on 4H-SiC(0001), na), this conference has received real (TUCSR, Tomsk, October 21, 2005) (1120), and 6H-SiC(0001),” Dr. Kenji international status. Komiya for “Detailed Investigation of Modern problems of microwave The sixth IEEE Siberian Conference on Geometrical Factor for Pseudo-MOS electronics, theory of circuits, telecom- Control and Communications (SIB- Transistor Technique,” and Dr. Yasuhi- munications technology and their CON) was held October 21-22, 2005, in ro Fujii for “Soft Error Free, Low Power applications were discussed in this Tomsk, Russia. The conference was and Low Cost Super SRAM with 0.98 conference. A separate session was organized by the Tomsk Joint Chapter, um2 Cell by Utilizing Existing 0.15um- devoted to the problems of designing the GOLD Affinity Group of the IEEE DRAM Process.” They were honored the electron devices and physical Siberia Section; Tomsk Polytechnic with a memorial wall plaque engraved effects in these devices. University; sponsored by IEEE and the with their name. The volume of proceedings was Russian Foundation for Basic Research. prepared and issued. In comparison Topics included Mathematical Simula- ED Japan with the 4th MEMIA conference (in tion and Modeling in Modern Tech- - by Hiroshi Ishiwara 2003), this volume was higher due to nologies of Control and Information an increase in the number of papers Processing; the Basic Problems of and participants, especially from China. Communication and Control Theory, We hope, due to this conference, that Cryptology; and Digital Video and the co-operation with the Harbin Insti- Image Processing. There was also a tute of Technology will be developed special session on Materials for Elec- and increased next time. tron Devices and X-Ray Detectors. The MEMIA’2005 Organizing Com- The technical program consisted mittee is thankful to IEEE MTT repre- of paper presentations and discus- sentative, Prof. Jozef Modelski, who sions, and the social program has provided the special technical included an excursion, banquet and support to our conference. We are bowling. We cordially invite you thankful to the Harbin Institute of and your colleagues to join the Sci- Technology representative, Prof. Qiu entific Program Committee of the Prof. Kenji Taniguchi (Osaka Univ., Chair of EDS Jing Hui, for technical and financial next SIBCON in 2007. Please find Kansai) and Dr. Kenji Komiya at the 5th Kansai co-sponsorship. We are especially the Call for Papers at our Web site Colloquium Electron Devices Workshop, thankful to Prof. Irina B. Vendik (St. http://www.comsoc.org/tomsk. October 26, 2005, Osaka, Japan Petersburg, Russia), for her participa- ~ Alexander V. Gridchin, Editor tion and beautiful invited report. The ED Japan Chapter organized the The Organizing Committee for ASIA & PACIFIC 9th IEEE EDS Mini-colloquium on MEMIA’2005 is also thankful to all (REGION 10) Nanometer CMOS Technology (WIM- who have invested their time and (REGION 10) NACT-9), held on October 25, 2005, at efforts into the success of the confer- the Tokyo Institute of Technology, ence. Especially to the invited foreign ED Kansai Yokohama, Japan, as a co-sponsor. It participants, who have visited our - by Toshimasa Matsuoka was reported in the January 2006 conference ‘in the heart of Siberia’, in The 5th Kansai Colloquium Electron issue of the EDS Newsletter in detail.

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Seventeen professors/experts, includ- AP/ED Bombay Conferences ing eight EDS Distinguished Lecturers - by Mahesh Patil • 13th IPFA (IPFA ’06) will be held from Taiwan and Japan, were invited During the last quarter, the Chapter from July 3-7, 2006, at Meritus Man- to deliver the outstanding talks. The had the following activities: darin, Singapore. The second Call scope was rather wide covering not 1. The DVD entitled “50 years in 50 for Papers has been announced only CMOS technology but also minutes” (from EDS) was screened recently. emerging new device technology, dis- at IIT Bombay on October 18, 2005. • The 7th Electronics Packaging play, organic electronics and MEMS. 2. On November 24, 2005, Prof. M. Technology Conference (EPTC Over 120 professors, students, Paranjpe, GAEL Health Microsys- 2005), was successfully organized research staffs, and engineers from tems and the Department of on December 7-9 at the Grand companies and organizations, partici- Physics, Georgetown University, Capthorne Waterfront Singapore. pated in the workshop. It was the gave a talk on “Non-Invasive and The conference was well attended largest event organized by the ED Blood-Free Diabetic Monitoring over the 3 days. A total of 87 dele- Japan Chapter for the year 2005. Using Novel Transdermal Patch gates participated in the short A Distinguished Lecturer Meeting Technologies.” courses on December 7, 2005. was organized by the ED Japan Chap- 3. On November 28, 2005, Prof. Shree- This is by far the best turn-out for ter on December 26, 2005, at Hiroshima pad Karamalkar, IIT, Madras, gave a any EPTC organized short course. University. Prof. Mitiko Miura-Mat- talk on “Device Modeling - The art The conference on December 8-9, tausch (Hiroshima University), deliv- of making approximations.” was attended by a total of 265 ered the lecture entitled “Circuit 4. Members of the Chapter participat- delegates from over 19 countries. Simulation Models for Coming MOS- ed in the 2005 IINC conference EPTC 2005 was organized by the FET Generations”. (IMAPS India National Conference), IEEE Rel/CPMT/ED Singapore ~ Hisayo S. Momose, Editor organized by the International Chapter. In the plenary session, Microelectronics & Packaging Soci- Dr. Robert Darveaux, from Amkor ED/SSC Bangalore ety, at IIT Bombay, December 19- Technology, discussed the “Cur- - by P. R. Suresh 21, 2005. rent Trends and Critical Issues in The following event happened during 5. Mr. Saurabh A. Chandorkar, Flip Chip Packaging” and Dr. Chi- the period of October through Decem- Stanford University, talked on ang Shiuh-Kao from Prismark, ber 2005: “Entropic modeling of thermo- gave an insight on “The Global The chapter organized a press elastic dissipation in microstruc- Packaging Business and Technol- conference to provide a preview of tures” on December 22, 2005. ogy”. An invited talk, “CPMT and the 2006 International Solid State Cir- EPTC: A study in Symbiosis”, was cuits Conference (ISSCC). This event REL/CPMT/ED Singapore delivered by the CPMT represen- was the first Indian ISSCC Press Con- - by K. L. Pey tatives, Dr. William Chen, Prof. ference. The goal of this event was Klaus-Jurgen Wolter and Dr. both to inform the local press of the Ricky Lee, during the conference goals, roles and importance of ISS- luncheon on day one. CC, and thereby to encourage partici- pation by Indian engineers in Others conference attendance, paper presen- • Dr. Alastair Trigg represented the tation and IEEE volunteer work. The IPFA Board and the Chapter to press conference was addressed by attend the ESREP ’05 meeting, held Dr. Kunihiko Iizuka, Dr. Tim Tredwell, October 2005 in France. Prof. Kenneth C Smith, Dr. Takayuki • Dr. Radhakrisnan represented the Kawahara, Prof. Navakant Bhat, Dr. C. IPFA Board and the Chapter to P. Ravikumar, Prof. Jamadagni and Prof. Christian Enz (middle) with Xing Zhou (left, attend the ISTFA ’05 meeting, held Dr. Sreedhar Natarajan. This event Chapter committee member) and Siek Liter November 2005 in the U.S.A. received good response from the (right, SSC Singapore Chapter Vice-Chair) • The Chapter donated a book prize press and technical community. In of U.S. $2,500 to the School of addition to the press conference, the Technical Talks Mechanical & Aerospace Engi- visiting delegates were taken around On November 30, 2005, Prof. Christian neering, Nanyang Technological Bangalore to some of the leading Enz, Swiss Center for Electronics and University. This book prize enti- semiconductor companies and to the Microtechnology (CSEM) and Swiss tled, “IEEE Reliability, CPMT/ED Indian Institute of Science to address Federal Institute of Technology (EPFL), Singapore Chapter Book Prize” is technical leaders. Based on the suc- Switzerland, gave a technical talk on awarded to the student who has cess of this press conference in “Compact Modeling of Thermal Noise distinguished himself in the Elec- attracting the attention of the techni- in the MOS Transistor Using the EKV tronics Manufacturing and Packag- cal community on ISSCC, there is a Model,” jointly organized by the ing Technology, final year proposal to conduct a similar event Rel/CPMT/ED and SSC Singapore specialization of the 5 year Engi- for IEDM. Chapter. neering (Mechanical) course.

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Special Report of Singapore drawn a regular attendance of about REL/CPMT/ED Chapter 250 participants over the past two - by K. L. Pey conferences. On 16 December 2005, the IEEE Singa- • Between 1998 and 2000, Dr. Ong pore REL/CPMT/ED Chapter hosted a was the Chair of the IEEE farewell and appreciation function for REL/CPMT/ED Singapore Chapter. Dr. Soon-Huat Ong, who just retired in With his leadership, the Chapter July 2005. Dr. Ong is a senior member received significant recognitions of IEEE and has made significant con- from all the three societies. For tributions towards the activities of the example, the Chapter received the IEEE Singapore REL/CPMT/ED Chapter, first Best Chapter Award from the the International Physical and Failure Electron Devices Society in 1998. Analysis Symposium (IPFA) and the Dr. Ong and some of the Executive members of • In 2004, Dr. Ong received a Special Electronics Packaging Technology Con- Chapter and IPFA at the farewell function. Presidential Recognition Award ference (EPTC), over the past 19 years. from the CPMT Society for his con- the leadership of Dr. Ong, the Chap- tributions towards the CPMT activi- Below are some of the important high- ter on Reliability/CPMT incorporated ties in Singapore. lights and contributions of Dr. Ong to the Electron Device Chapter as a the IEEE: new joint Chapter called IEEE Dr. Ong has indeed been an instrumen- • Dr. Ong was one of the founding REL/CPMT/ED Singapore Chapter. tal person in the development of IC fail- members of the IEEE IPFA. In 1986- Between 1994 and 2005, Dr. Ong ure analysis and reliability, and 87, as a core member in the Failure played an instrumental role in shap- packaging technology activities in Sin- Analysis interest group consisting of ing the IC reliability, packaging and gapore for the past 20 years. There are Dr. Ong himself, Mr. Swee Yong electron device activities in the many other contributions and achieve- Khim, Prof. Daniel Chan and Dr. Chapter as well as in Singapore, ments of Dr. Ong which are impossible Philip Ho, the group initiated the holding various key appointments to be mentioned here. On behalf of the first IPFA (i.e., IPFA’87), in Singa- in the Executive Committee. IEEE REL/CPMT/ED Singapore Chapter, pore, which was the first such con- • Also in 1994, as an Executive Com- we wish Dr. Ong a very happy retire- ference on FA and Reliability of ICs mittee member of the Chapter, Dr. ment ahead. outside the U.S.A. Ong was a key person in formulat- • Dr. Ong was part of the IPFA orga- ing a continuing education program MTT/AP/ED Thailand nizing committee since IPFA’87 and on the Failure Analysis and Reliabili- - by Monai Krairiksh held many key responsibilities, ty (FAR). Together with Prof. Daniel The IEEE MTT/AP/ED Thailand including the General Chair of Chan, Prof. Jacob Phang, Mr. Swee Chapter organized a seminar on IPFA’95 and the Technical Chair for Yong Khim and Dr. MK Radhakrish- Circuits and Systems for Wireless IPFA’93. nan, a series of FAR short courses Communications on November 7, • In 1994, together with Mr. Swee was conducted. The program was 2005, at King Mongkut’s Institute Yong Khim, Prof. Daniel Chan, Dr. so successful that it was repeated in of Technology, Ladkrabang. There Philip Ho and Dr. MK Radhakrish- 1995 and 1997. This was probably were nine oral presentations and nan, the team initiated a new IEEE the first structured educational train- ten poster presentations. On this Chapter on reliability and CPMT in ing program on IC FAR courses con- occasion, Professor Tapan Sarkar Singapore. The IEEE Reliability/ ducted for industrial engineers and (Syracuse University), gave a spe- CPMT Singapore Chapter was offi- managers. cial lecture on “Signal Enhance- cially formed in 1994. In 1996, with • During the period 1996-97, based on ment through Polarization the feedback of the participants of Adaptivity on Transmit in a Near- IPFAs, the Chapter felt that there Field MIMO Environment”. There was a growing interest in packaging were ninety attendances at this technology and a need to organize a lecture. Packaging Conference in the Asia ~ Xing Zhou, Editor Pacific rim. Thus, a new conference focusing on Electronics Packaging Technology, called Electronics Pack- aging Technology Conference (EPTC), was formed in 1997 by Mr. Swee Yong Khim, Dr. Ong, Prof. Andrew Tay and some interested members from the Singapore Dr. Soon-Huat Ong receiving a token of industry. Since then, EPTC has appreciation from Dr. Kin-Leong Pey, Chair of become a premier conference in Professor Tapan Sarkar gave a lecture on the IEEE Singapore REL/CPMT/ED Chapter. packaging technology and has multiple input, multiple output system.

April 2006 ❍ IEEE Electron Devices Society Newsletter 29 13eds02.qxd 3/6/06 8:36 AM Page 30

EDS MEETINGS CALENDAR (As of February 24, 2006)

The complete EDS Calendar can be found at our web site: http://www.ieee.org/society/eds/meetings/meetings_calendar.xml Please visit!

April 14 - 14, 2006, T IEEE Workshop on May 22 - 24, 2006, T International Confer- June 15 - 17, 2006, T IEEE Symposium on VLSI Microelectronics and Electron Devices, ence on Microwaves, Radar and Wireless Com- Circuits, Location: Hilton Hawaiian Village, Hon- Location: Boise Center on the Grove, Boise, ID, munication Location: Sympozjum Hotel, Krakow, olulu, HI, USA, Contact: Phyllis Mahoney, E-Mail: USA, Contact: Roy Meade, E-Mail: Poland, Contact: Elzbieta Godlewska-Sedek, E-Mail: [email protected], Deadline: 1/8/06, [email protected], Deadline: 2/17/06, www: [email protected], Deadline: 1/15/06, www: www: http://www.vlsisymposium.org http://www.ewh.ieee.org/r6/boise/wmed2006 www.mikon-2006.pl /Welcome.htm June 21 - 23, 2006, T International Workshop May 24 - 27, 2006, T International Confer- on Low Temperature Electronics, Location: April 25 - 27, 2006, @ IEEE International ence on Perspective Technologies and European Space & Technology Center, Noordwijk, Vacuum Electron Sources Conference, Methods in MEMS Design, Location: Tran- The Netherlands, Contact: Bruno Leone, E-Mail: Location: Portola Plaza Hotel, Monterey, CA, [email protected] Deadline: 12/15/05, www: USA, Contact: Ralph Nadell, E-Mail: skarpathian spa Polyana, Lviv-Polyana, Ukraine, http://www.congrex.nl/06c01 [email protected], Deadline: 1/6/06, Contact: Mykhalyo Andriychuk, E-Mail: andr@iap- www: www.ivec2006.org mm.lviv.ua, Deadline: 3/1/06, www: http:// June 22 - 24, 2006, T International Confer- www.lp.edu.ua/Institute/IKN/CAD/MEMSTECH ence on Mixed Design of Integrated Cir- April 25 - 27, 2006, @ IEEE International cuits and Systems, Location: Orbis Hotel Vacuum Electronics Conference, May 25 - 27, 2006, T International Workshop Gdynia, Gdynia, Poland, Contact: Andrzej Napier- Location: Portola Plaza Hotel, Monterey, CA, on Computational Electronics, Location: Vien- alski, E-Mail: [email protected], Deadline: USA, Contact: Ralph Nadell, E-Mail: na University of Technology, Vienna, Austria, Con- 2/28/06, www: http://www.mixdes.org [email protected], Deadline: 1/6/06, tact: Hans Kosina, E-Mail: [email protected], www: www.ivec2006.org Deadline: 1/15/06, www: http://www.iwce.org June 26 - 30, 2006, T Future Trends in April 26 - 28, 2006, T International Sym- Microelectronics Workshop, Location: Cap- June 4 - 8, 2006, @ IEEE International Sympo- posium on VLSI Design, Automation sis Hotel and Conference Center, Heraklion, sium on Power Semiconductor Devices & and Test, Location: Ambassador Hotel, Greece, Contact: Serge Luryi, E-Mail: Hsinchu, Taiwan, Contact: Amy Wu, E-Mail: Integrated Circuits, Location: University of [email protected], Deadline: Not Available, [email protected], Deadline: 10/15/05, Naples “Federico II”, Naples, Italy, Contact: Paolo www: http://www.ee.sunysb.edu/~serge/ www: http://vlsidat.itri.org.tw Spirito, E-Mail: [email protected], Deadline: FTM.html 10/24/05, www: www.ispsd2006.it April 26 - 28, 2006, T International June 27 - 29, 2006, T University/Govern- Caribbean Conference on Devices, Cir- June 4 - 7, 2006, * IEEE International Inter- ment/Industry Microelectronics Sympo- cuits and Systems, Location: Park Royal connect Technology Conference, Location: sium, Location: San Jose State University, San Jose, Hotel, Cozumel, Mexico, Contact: Roberto Mur- Hyatt Regency at San Francisco Airport, CA, USA, Contact: David Parent, E-Mail: dpar- phy Arteaga, E-Mail: [email protected], Dead- Burlingame, CA, USA, Contact: Wendy Walker, E- [email protected], Deadline: 2/17/06, www: line: 11/18/05, www: http://iccdcs.uib.es Mail: [email protected] Deadline: Not Avail- www.engr.sjsu.edu/dparent/ugim2006 able, www: www.ieee.org/conference/iitc April 26 - 28, 2006, T International Sympo- July 1 - 5, 2006, T Siberian Russian Work- sium on VLSI Technology, Systems and June 11 - 12, 2006, @ IEEE Silicon Nanoelec- shop and Tutorial on Electron Devices and Applications, Location: Ambassador Hotel, tronics Workshop, Location: Hilton Hawaiian Materials, Location: Novosibirsk State Technical Hsinchu, Taiwan, Contact: Amy Wu, E-Mail: University, Novosibirsk, Russia, Contact: Alexander [email protected], Deadline: 10/15/05, www: Village, Honolulu, HI, USA, Contact: Wolfgang Gridchin, E-Mail: [email protected], Deadline: http://vlsitsa.itri.org.tw/2006/ Porod, E-Mail: [email protected], Deadline: 2/1/06, www: http://nano-nd.edu/si-nano/SNW06 Not Available, www: Not Available

May 15 - 16, 2006, T International Workshop July 3 - 7, 2006, T IEEE International Sympo- June 11 - 13, 2006, T IEEE Radio Frequency on Junction Technology, Location: Hotel Equa- sium on the Physical and Failure Analysis Integrated Circuits Symposium, Location: torial, Shanghai, China, Contact: Xin-Ping Qu, E- of Integrated Circuits, Location: Meritus Man- Moscone Center, San Francisco, CA, USA, Contact: Mail: [email protected], Deadline: 1/15/06, darin, Singapore, Singapore, Contact: Jasmine John Barr, E-Mail: [email protected], Deadline: www: http://www.iwjt2006.com Leong, E-Mail: [email protected], Deadline: 12/2/05, www: http://www.ims2006.org 2/3/06, www: http://www.ieee.org/ipfa May 22 - 24, 2006, * IEEE/SEMI Advanced June 13 - 17, 2006, @ IEEE Symposium on Semiconductor Manufacturing Conference July 11 - 20, 2006, T IEEE Conference on Nan- and Workshop, Location: The Sheraton Hotel, VLSI Technology, Location: Hilton Hawaiian Vil- otechnology, Location: Westin Cincinnati, Boston, MA, USA, Contact: Margaret Kindling, E- lage, Honolulu, HI, USA, Contact: Phyllis Mahoney, Cincinnati, OH, USA, Contact: Clifford Lau, E-Mail: Mail: [email protected], Deadline: 9/22/05, E-Mail: [email protected], Deadline: [email protected], Deadline: 2/28/06, www: www: www.semi.org/asmc 1/8/06, www: http://www.vlsisymposium.org http://ewh.ieee.org/tc/nanotech/

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August 28 - September 1, 2006, T Symposium September 27 - 29, 2006, * International November 5 - 9, 2006, T IEEE International on Microelectronics Technology & Devices, Semiconductor Conference, Location: Sinaia Conference on Computer Aided Design, Location: Ouro Preto, Brazil, Contact: Jacobus Hotel, Sinaia, Romania, Contact: Dan Dascalu, E- Location: DoubleTree Hotel, San Jose, CA, USA, Swart, E-Mail: [email protected], Deadline: Mail: [email protected], Deadline: Not Available, Contact: Kathy MacLennan, E-Mail: kathy@mpasso- 3/5/06, www: Not Available www: www.imt.ro/CAS ciates.com, Deadline: 4/19/06, www: http://www.iccad.com/future.html September 6 - 8, 2006, @ IEEE International October 2 - 5, 2006, * IEEE International SOI Conference on Simulation of Semiconduc- Conference, Location: Holiday Inn Select Niagara November 8 - 10, 2006, T International Work- Falls, Niagara Falls, NY, USA, Contact: Bobbi Arm- tor Processes and Devices, Location: Mon- shop on Dielectric Thin Films for Future ULSI bruster, E-Mail: [email protected], Deadline: terey Plaza Hotel, Monterey, CA, USA, Contact: Devices: Science and Technology, Location: 5/5/06, www: www.soiconference.org Fely Barrera, E-Mail: [email protected] Kawasaki City Industrial Promotion Hall, Kana-

ford.edu, Deadline: 2/24/06, www: October 4 - 6, 2006, T International Sympo- gawa, Japan, Contact: Takanobu Watanabe, E- www_tcad.stanford.edu/sispad06 sium on Low-Power Electronics and Mail: [email protected], Deadline: 7/24/06, Design, Location: Rothach-Egern Conference Cen- www: http://home.hiroshima-u.ac.jp/iwdtf/ September 10 - 13, 2006, T IEEE Custom Inte- ter, Tegernsee, Germany, Contact: Mircea Stan, E- grated Circuits Conference, Location: Double Mail: [email protected], Deadline: 3/3/06, November 12, 2006, T Reliability of Com- Tree Hotel, San Jose, CA, USA, Contact: Melissa www: http://www.islped.org pound Semiconductors Workshop, Location: Widerkehr, E-Mail: [email protected], Marriott Riverwalk Hotel, San Antonio, TX, USA, Deadline: 4/7/06, www: http://www.ieee- October 8 - 10, 2006, @ Bipolar/BiCMOS Cir- Contact: Anthony Immorlica, E-Mail: cicc.org cuits and Technology Meeting, Location: [email protected], Deadline: Maastricht Exposition and Congress Centre, Maas- Not Available, www: http://www.jedec.org/ September 11 - 15, 2006, T International tricht, The Netherlands, Contact: John Long, E-Mail: home/gaas Crimean Microwave Conference [email protected], Deadline: Not Available, “Microwave & Telecommunication www: www.ieee-bctm.org November 12 - 15, 2006, * IEEE Compound Technology”, Location: Sevastopol National Semiconductor IC Symposium, Location: Mar- International Confer- Technical University, Sevastopol, Ukraine, October 10 - 13, 2006, T riott Riverwalk Hotel, San Antonio, TX, USA, ence on Advanced Thermal Processing of Contact: Sergey Smolskiy, E-Mail: smol- Contact: Mitchell Shifrin, E-Mail: [email protected], Semiconductors, Location: Kyoto Brighton Hotel, [email protected], Deadline: 5/11/06, www: Deadline: Not Available, www: http:// Kyoto, Japan, Contact: Bo Lojek, E-Mail: http://ieee.orbita.ru/aps/crim063.htm www.csics.org [email protected], Deadline: 5/31/06, www: www.ieee-rtp.org September 12 - 15, 2006, T International Con- December 11 - 13, 2006, * IEEE International ference on Solid-State Devices and Materi- Electron Devices Meeting, Location: San Fran- October 12 - 13, 2006, T IEEE Internation- als , Location: Pacifico Yokohama, Yokohama, al Seminar/Workshop on Direct and cisco Hilton and Towers, San Francisco, CA, USA, Japan, Contact: SSDM Conference Secretariat, E- Inverse Problems of Electromagnetic Contact: Phyllis Mahoney, E-Mail: Mail: [email protected], Deadline: 5/1/06, and Acoustic Wave Theory, Location: [email protected], Deadline: Not Available, www: http://www.ssdm.jp Tbilisi State University, Tbilisi, Ukraine, Con- www: www.ieee.org/conference/iedm tact: Mykhalyo Andriychuk, E-Mail: andr@iap- September 17 - 20, 2006, T IEEE Conference on mm.lviv.ua, Deadline: 7/1/06, www: December 18 - 21, 2006, T International Con- Intelligent Transportation Systems, Location: http://www.ewh.ieee.org/soc/cpmt/ukraine/ ference on Computers and Devices for Toronto Marriott Downtown Eaton Centre, Toronto, Communication, Location: SINP Convention Canada, Contact: Baher Abdulhai, E-Mail: October 16 - 19, 2006, * IEEE International Center, Kolkata, Kolkata, India, Contact: Animesh [email protected], Deadline: 3/1/06, Integrated Reliability Workshop, Location: Maitra, E-Mail: [email protected], Dead- www: www.itsc2006.org Stanford Sierra Conference Centers, Contact: Roy line: 5/31/06, www: http://www.irpel.org/ Walker, E-Mail: [email protected], Deadline: codec/codec04.html September 18 - 22, 2006, T European Solid- 7/12/06, www: www.iirw.org State Device Research Conference, Location: March 19 - 22, 2007, @ IEEE International Montreux Convention Center, Montreux, Switzer- October 22 - 25, 2006, T IEEE International Conference on Microelectronic Test Struc- Conference on Sensors, Location: Daegu Exhi- land, Contact: Yusuf Leblebici, E-Mail: yusuf.leblebi- tures, Location: Takeda Hall, University of Tokyo, bition & Convention Center, Daegu, Korea, [email protected], Deadline: 4/7/06, www: Bunkyo-ku, Japan, Contact: Yoichi Tamaki, E-Mail: Contact: Sukhan Lee, E-Mail: [email protected], http://www.essderc2006.com [email protected], Deadline: Deadline: 4/7/06, www: www.ieee-sen- 9/15/06, www: http://www.ee.ed.ac.uk/ICMTS sors2006.org September 20 - 21, 2006, T International Confer- ence on Actual Problems of Electron Device & May 14 - 18, 2007, @ IEEE International Con- October 23 - 26, 2006, T International Confer- Engineering, Location: Saratov State Technical Uni- ference on Indium Phosphide and Related ence on Solid-State & Integrated Circuits versity, Saratov, Russia, Contact: Alexei Mirosh- Technology, Location: Hotel Equator Shanghai, Materials, Location: Kunibiki Messe, Matsue, nichenko, E-Mail: [email protected], Deadline: Not Shanghai, China, Contact: Mengqi Zhou, E-Mail: Japan, Contact: Shigehisa Arai, E-Mail: Available, www: http://www.sstu.ru/sstu/win/konf/ [email protected], Deadline: 5/31/06, [email protected], Deadline: Not Available, apede2005.html www: http://www.ICSICT2006.com www: http://www.iprm.jp/index.html

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32 IEEE Electron Devices Society Newsletter ❍ April 2006