Mosys Investor Presentation

MoSys Investor Presentation

September 2007

This presentation may contain forward-looking statements about the Company including, without limitation, benefits and performance expected from use of the Company’s 1T- SRAM®, 1T-FLASH™, and Mixed Signal technologies. Forward-looking statements are based on certain assumptions and expectations of future events that are subject to risks and uncertainties. Actual results and trends may differ materially from historical results or those projected in any such forward-looking statements depending on a variety of factors. These factors include but are not limited to, customer acceptance of our 1T-SRAM®, 1T-FLASH™, and Mixed Signal technologies, the timing and nature of customer requests for our services under existing license agreements, the level of commercial success of licensees’ products, ease of manufacturing and yields of devices incorporating our 1T-SRAM®, our ability to enhance the 1T-SRAM®, 1T-FLASH™, and Mixed Signal technology or develop new technologies, the level of intellectual property protection provided by our patents, the vigor and growth of markets served by our licensees and customers, and operations of the Company and other risks identified in the Company’s most recent annual report on Form 10-K filed with the Securities and Exchange Commission, as well as other reports that MoSys® files from time to time with the Securities and Exchange Commission. MoSys® undertakes no obligation to update publicly any forward-looking statement for any reason, except as required by law, even as new information becomes available or other events occur in the future.

MoSys to become the Leading Provider of HIGH VALUE Semiconductor IP for SoC’s

By developing/acquiring unique, patented technology and know-how, and

By targeting high volume markets in order to generate substantial royalty flow

Processor-centric Eco-system Providers ARM, MIPS, and ARC

Design service IP Creators Artisan (ARM), Virage Logic and Synopsis

High-Value Licensing & Patent Based Firms Rambus, Qualcomm, and MoSys

MoSys 1T-SRAM

Reduce ASP

Increase Memory

Add Logic

6T Embedded SRAM

$80,000

$60,000

$40,000

$20,000

$00 2003 2004 2005 2006 2007 2008 2009

Source: Business Communications Company (BCC)

2006 2007 2008 2009 2010 Worldwide ASIC/SoC Markets ($M) $45,792 $55,143 $66,045 $74,654 $89,300 Share of ASIC/SoC Market with Embedded High Density 15% 15% 18% 20% 22% Memories (%) Worldwide ASIC/SoC Markets with Embedded High Density $6,869 $8,271 $11,888 $14,931 $19,646 Memories ($M) Average Production Level Royalties (%) 1.5% 1.5% 1.5% 1.5% 1.5%

Embedded High Density Memory IP Revenues SAM ($M) $103 $124 $178 $224 $295

Projected Royalty Share 5.5% 7.3% 2006 2007 2008 2009 2010 Worldwide ASIC/SoC Design Starts 7,090 5,200 4,905 4,785 4,670 Share of ASIC/SoC Design Starts with Embedded High Density 5.3% 5.6% 7.0% 8.6% 9.4% Memories (%) Worldwide ASIC/SoC Design Starts with Embedded High 378 291 343 410 440 Density Memories Average NRE/License Fee per Project ($k) $250 $250 $250 $250 $250

Embedded High Density Memory IP Revenues SAM ($M) $94 $73 $86 $102 $110

Projected Licensing Share 6.7% 12.3% 2006 2007 2008 2009 2010 Total Worldwide ASIC/SoC SAM $197 $197 $264 $326 $405

* *

* From Partnership with TSMC

Sell Technology Licenses to IDM’s and pure- play foundries

Fab capacity is becoming highly concentrated Efficient Distribution Channel

Design macros for foundries on request – NRE based

Promote 1T-SRAM benefits & create end-user demand

Licensees to pay royalties

Reference Memory Macro design by MoSys

Test chip development Signed Contract Test Chip Tape Out

Fabrication of Test Chip

Characterization And Reliability Analysis

Final Reports

1 3 5 7 + fab cycle

Technology Porting Phase Technology License

NRE License Fee / Based Royalty Based

Sell/port existing 0.13micron macros to emerging fabs

License design service companies to act as sales channels for 1T-SRAM

Sell custom macros to fabless semiconductor companies

License System Solution Macros (SSM) to ASIC/SOC designers

1T-SRAM Benefits for Display Drivers Lower Cost Significantly reduced area Higher Yield Few Metal Layers Optimized Form Factor Fits on glass or tape Unusual dimensions Low Power 1T-SRAM MULTIBANK® design Optimized System Interface Dual-Port Architecture Multiple Foundry Support Qualified in standard logic process Compatible with LCD driver process

2,000 QVGA (320x240) VGA (640x480 WVGA (480x800) QHD (960x540) Total

1,500

1,000 M Units

500

00 2006 2007 2008 2009 2010 2011

Total Screen Forecast by Resolution

M Units 2006 2007 2008 2009 2010 2011 QVGA (320x240) 442.2 358.0 199.2 102.7 48.2 38.3 VGA (640x480 604.1 592.9 584.4 569.9 545.5 394.2 WVGA (480x800) 131.9 324.9 592.7 729.8 784.1 960.7 QHD (960x540) 2.3 55.2 64.4 147.9 281.5 400.6 Total 1,180.6 1,331.0 1,440.8 1,550.3 1,659.3 1,793.8

Source: Semico Research Corp. - Jun/2007

Mid Range Cell Phones 2” to 4”+ Screen Sizes Single and Dual Display Sets Smart Cell Phones 4”+ Screen Sizes Single Display Sets Digital Still & Video Cameras Global Positioning System (GPS) Devices Personal Digital Assistants (PDA) Personal Media & MP3 Players (PMP) Handheld Game Consoles Notebook PCs

MoSys 1T-FLASH

High-Density Embedded Non-Volatile Memory Solutions using Conventional CMOS Logic Process

High-Densities Highly Scalable Technology From 0.25-micron to 55nm/45nm Low Implementation Cost Leverages basic CMOS logic process No extra masks Flexible Product Architectures High Performance Data and Code Storage Applications

High Performance Embedded FLASH at CMOS Baseline Logic Process

Up to 64 Mbit of FLASH moving to Baseband Silicon

Source: Qimonda, 2007

2006 2007* 2008* 2009* 2010*

WorldWide ASIC/SoC Markets ($M) $45,792.3 $55,142.6 $66,045.2 $74,654.3 $89,286.5

Share of ASIC/SoC Market with Embedded Non- 10% 12% 15% 15% 20% Volatile Memories (%) WorldWide ASIC/SoC Markets with Embedded Non- $4,579.2 $6,617.1 $9,906.8 $11,198.1 $17,857.3 Volatile Memories ($M)

Average Production Level Royalties (%) 2% 2% 2% 2% 2%

Embedded Non-Volatile Memory IP Revenues SAM $68.7 $99.3 $148.6 $168.0 $267.9 ($M)

2006 2007* 2008* 2009* 2010*

WorldWide Embedded NVM Design Starts 478 519 609 757 809

Average NRE/License Fee per Project ($k) $200.0 $200.0 $200.0 $200.0 $200.0

Embedded NVM IP NRE/License Fees Revenues SAM $95.6 $103.8 $121.8 $151.5 $161.8 ($M)

2006 2007* 2008* 2009* 2010*

Embedded NVM IP Revenues SAM ($M) $164.3 $203.0 $270.4 $319.4 $429.6

Source: BCC, Semico Research Corp, Memory Strategies Internat’l, MoSys - 2007

Sell 65nm 1T-FLASH Technology Licenses Similar to 1T-SRAM phased license scheme Longer product qualification cycle Targets include top IDM’s and pure-play foundries

License 1T-FLASH technology from 0.18/0.13-micron development programs Target both IDM’s and emerging fabs Target microcontrollers with embedded FLASH

MoSys Analog/Mixed-Signal

Every PC will migrate from red to blue laser Every entertainment unit will migrate from red to blue laser

Video Game DVD Player

DVD AFE Controller

Computer/Laptop Set-Top Box/DVR

250 Consumer Electronics Computers Game/Camcorder 200

150 DVD-RW 100 COMBO 50 CD-RW

00 DVD-ROM 2006 2007 2008 2009 2010 2011 CD-ROM

Every Network-Storage Device will have GbEthernet Interface Every PC will have GbEthernet Interfaces

Switch Set Top Box for IP-TV

GbEthernet PHY

SAN NAS

Computers/Laptop

MoSys for All High Speed Interfaces

320,000

240,000

160,000 K Units

80,000

00 2007 2008 2009 2010 2011

SATA SATA DVD drive Raid drive

Mother board

NAS HDD/DAS

SATA SATA

Every PC will have SATA interface Every Storage device will have SATA interface

500 Total PC SATA Market (MU) Total PC IDE Market (MU)

375

250

125

0 2006 2007 2008 2009 2010

License top-tier semi customers Fabless IDM Foundries

Accelerate TTM at 65nm node

Expand revenues via services to: Customize IP Port to different foundries Turn-key designs with all our GIGA/MEGA cells

Analog & silicon-proven mixed-signal IP opens new doors, increases revenue, & captures more MoSys IP on SoCs

High-speed mixed-signal IP is complimentary to MoSys memory

Mixed-signal IP is targeted for high-volume, high-growth markets

Leverages MoSys existing customers

September 2007

20,000 License Royalty Total

15,000

10,000

5,000

00 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 FY FY 2006 2006 2006 2006 2007 2007 2007 2007 2006 2007 est* est* est*

* Mid-range estimate 30% year-over-year growth

Gaming Handsets Consumer Comm

2005 2006 2007 2008 2009 2010

* Estimated based on current and projected production volume

As of June 30, 2007

Actual (In thousands)

Cash, cash equivalents and investments $87,595

Total assets $105,892

Liabilities $2,416

Stockholders’ equity $103,476

Debt $0

Rich technology foundation: Production proven, patent rich 1T-SRAM® technology New opportunities in cellular handsets New semiconductor IP offerings: 1T-FLASH™ breakthrough technology for SoC code storage Mixed Signal IP for optical storage, networking & connectivity Significant licensees: TSMC, NEC and Fujitsu Highly leveraged sales strategy High profile design wins in gaming & handsets Major contributors to growing royalty stream Scaleable IP business model Patented technology licensed through IDM’s and Foundries